CN105826457B - For the laser white light emitting device for illuminating or showing - Google Patents
For the laser white light emitting device for illuminating or showing Download PDFInfo
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- CN105826457B CN105826457B CN201610329920.7A CN201610329920A CN105826457B CN 105826457 B CN105826457 B CN 105826457B CN 201610329920 A CN201610329920 A CN 201610329920A CN 105826457 B CN105826457 B CN 105826457B
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- 239000000919 ceramic Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- 230000005284 excitation Effects 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 5
- 239000000741 silica gel Substances 0.000 abstract description 4
- 229910002027 silica gel Inorganic materials 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of laser white light emitting device for illuminating or showing.The excited white light light-emitting device includes heat sink substrate, semiconductor laser chip and transparent fluorescent ceramic；The semiconductor laser chip lasing blue light；The semiconductor laser chip is fixed in the heat sink substrate；The semiconductor laser chip is packaged by the transparent fluorescent ceramic.The present invention is combined transparent fluorescent ceramic with the chip of excitation source, and avoiding fluorescent material and silica gel causes decline or the light source fails of luminous efficiency because of device heating；If making device be operated in high current high temperature environment according to the heat resistance using needs, transparent fluorescent ceramic, the decline of device output power and electro-optical efficiency in high temperature or the work of high Injection Current is avoided.
Description
Technical field
The present invention relates to a kind of laser white light emitting device for illuminating or showing, belongs to illumination and display field.
Background technology
Illumination originates in the incandescent lamp of Edison invented, has invented low-pressure sodium lamp, fluorescent lamp, high-pressure mercury successively again later
Lamp, metal halide lamp, high-pressure mercury lamp, three-color fluorescent lamp, compact fluorescent lamp, HF lamp without electrodes and LED
Deng electric light source.The evaluation criterion of usual light source has the height of the parameters such as efficiency, luminous flux, colour rendering index, colour temperature, wherein light source efficiency
Low reaction its power saving capability, LED white light source have the characteristics that high energy efficiency, long-life, be acknowledged as after
Green illumination light source after incandescent lamp, fluorescent lamp.
At present in lighting field, excitation source is done using LED more, excites corresponding fluorescent material to obtain white light
Light source.White light source based on light emitting diode has four major programmes：The first scheme is to use blue light-emitting diode
Yellow fluorescent powder, fluorescent material transmitting gold-tinted under the exciting of blue light are excited, then is mixed with some blue light appeared, by complementary color principle
And white light is presented, white light colour rendering index prepared by the program compares than relatively low and white light parameter with temperature and operating current change
Greatly；Second scheme is directly to be mixed into white light by red-green-blue light emitting diode, due to the effect of three light emitting diodes
Rate, luminous power are with the asynchronous change of the parameters such as Injection Current, temperature, time, therefore it is required that higher control circuit；The third
Scheme is to excite red-green-blue fluorescent material by ultraviolet or near ultraviolet light emitting diode, because people's vision is to ultraviolet or near ultraviolet
Light is insensitive, and the color of this white light is only determined by fluorescent material, therefore program colour rendering index is high and white light parameter is more stable,
4th kind of scheme is to do light source activation yellow fluorescent powder with blue laser, and fluorescent material excites lower transmitting yellow in the laser of blue light
Light, then mixed with some blue light appeared, white light is presented by complementary color principle.
All it is that the shortcomings that light source activation fluorescent material produces white light, and excitated fluorescent powder is luminous has more than in these four schemes：
1st, fluorescent material work long hours at high temperature decay it is very serious；2nd, the fluorescent material decay of different colours is inconsistent, uses one section
Light source easily produces color drift after time；3rd, fluorescent material use makes all to be used in mixed way with silica gel, and silica gel is yellow under long-time high temperature
Change causes light efficiency to decline.Therefore it is one of current maximum technological difficulties without using light-emitting phosphor.
The content of the invention
It is an object of the invention to provide a kind of laser white light emitting device for illuminating or showing, the laser white-light emitting
Device replaces light-emitting phosphor using transparent fluorescent ceramic, so as to obtain white light source, has high energy efficiency, high light flux and high fever
Stability, therefore fluorescent material decay during high temperature can be avoided to cause light source fails.
Provided by the present invention for the laser white light emitting device for illuminating or showing, including heat sink substrate, semiconductor laser
Device chip and transparent fluorescent ceramic；
The semiconductor laser chip lasing blue light；
The semiconductor laser chip is fixed in the heat sink substrate；
The semiconductor laser chip is packaged by the transparent fluorescent ceramic.
In above-mentioned laser white light emitting device, the semiconductor laser chip is welded in the heat sink substrate；
The heat sink substrate is made up of aluminium, copper, aluminium nitride or aluminum oxide.
In above-mentioned laser white light emitting device, the exiting surface of the transparent fluorescent ceramic can be curved surface, such as sphere.
In above-mentioned laser white light emitting device, the exiting surface plating anti-reflection film of the transparent fluorescent ceramic, to improve light extraction
Rate, reduce the scattering of exiting surface；
The incidence surface of the transparent fluorescent ceramic plates anti-reflection film and reflectance coating successively, i.e., is plated on the incidence surface two layers
Film, the effect of the anti-reflection film is that increase laser enters light rate, and the effect of the reflectance coating is to prevent white light reflection, improves white light
Light emission rate；
The non-exiting surface of the transparent fluorescent ceramic and non-incidence surface plating total reflection film, i.e., described transparent fluorescent ceramic and institute
The faying face for stating heat sink substrate plates the total reflection film, to reduce white light loss, improves white light light emission rate.
In above-mentioned laser white light emitting device, the molecular formula of the transparent fluorescent ceramic is Y3Al5O12:xCe3+, wherein,
X is the number between 0~0.05, such as 0.03.
In above-mentioned laser white light emitting device, the transparent fluorescent ceramic is prepared according to the method comprised the following steps：
Ceramic material powder and sintering aid is sintered produces；
The ceramic material powder is Al2O3、Y2O3And CeO2；
The sintering aid is MgO and SiO2At least one of.
In above-mentioned laser white light emitting device, the sintering includes vacuum-sintering and the annealing carried out successively；
The temperature of the vacuum-sintering is 1730~1800 DEG C, and soaking time is 5~30 hours, vacuum 10-3~10-5Pa；
The condition of the annealing is：5~40 hours are incubated under conditions of 1200~1500 DEG C, it is then cold with stove
But.
The dosage of the sintering aid is the 0~1% of the gross mass of the ceramic material powder, such as 1%；
The Al2O3, the Y2O3With the CeO2Mol ratio according to molecular formula be Y3Al5O12:xCe3+Middle element al, Y
It is calculated with Ce stoichiometric proportion.
Laser white light emitting device of the present invention can be made in accordance with the following steps：
The semiconductor laser chip is fixedly welded in heat sink substrate, the transparent fluorescent ceramic for sintering preparation is entered
Row coating film treatment, then the transparent fluorescent ceramic after plated film is packaged to the semiconductor laser chip, and be fixed on
In the heat sink substrate, that is, the laser white light emitting device is obtained.
The semiconductor laser chip can produce transparent fluorescent ceramic by the transparent fluorescent ceramic after exciting plated film
Raw white light.
Application of the transparent fluorescent ceramic in the laser white light emitting device for being used for illuminating or show is made is also the present invention
Protection domain.
Provided by the present invention for the laser white light emitting device for illuminating or showing, it is located at the half of blue light using excitation wavelength
Conductor laser replaces existing light emitting diode as excitation source, to excite transparent fluorescent ceramic it is emitted white light, its
Advantage is mainly manifested in following aspect：
1st, semiconductor laser chip is easier to realize that high power and high electro-optical efficiency export, and core devices performance
Raising will result directly in the raising of prepared white light source performance.
2nd, the present invention is combined transparent fluorescent ceramic with the chip of excitation source, avoids fluorescent material and silica gel because device is sent out
Heat and cause decline or the light source fails of luminous efficiency；If device is made according to the heat resistance using needs, transparent fluorescent ceramic
High current high temperature environment is operated in, avoids device output power and electro-optic conversion effect in high temperature or the work of high Injection Current
The decline of rate.
3rd, the present invention is combined transparent fluorescent ceramic with the chip of excitation source, and the heat-resistant stability of transparent fluorescent ceramic makes
The power of laser white light devices improves.
4th, because the hot spot of semiconductor laser is easy to shaping, or even optical fiber output can be coupled into, so can use
Which produces the solid-state white device with specific use.
Brief description of the drawings
Fig. 1 is to make the present invention for the flow chart for the laser white light emitting device for illuminating or showing.
Fig. 2 is the present invention for the transparent fluorescent ceramic schematic diagram for the laser white light emitting device for illuminating or showing.
Fig. 3 is the present invention for the structural representation for the laser white light emitting device for illuminating or showing.
Fig. 4 is the present invention for the luminous light shape schematic diagram for the laser white light emitting device white light source for illuminating or showing.
Fig. 5 is the present invention for the spectral distribution curve figure for the laser white light emitting device for illuminating or showing.
Each mark is as follows in figure：
1 transparent fluorescent ceramic, 2 light extraction antireflective coatings, 3 enter light antireflective coating, 4 enter light total reflection film layer, 5 heat sink substrate knots
Close total reflection film layer, 6 heat sink substrates, 7 semiconductor laser chips, 8 laser white light devices light emission directions.
Embodiment
Experimental method used in following embodiments is conventional method unless otherwise specified.
Material used, reagent etc., unless otherwise specified, are commercially obtained in following embodiments.
Fig. 1 is the flow chart for preparing the laser white light emitting device for being used for illuminating or show, is entered according to the flow shown in Fig. 1
It is prepared by row：
Prepare transparent fluorescent ceramic：
Accurately weigh Al2O3、Y2O3And CeO2And be fully ground, wherein, mol ratio CeO2、Y2O3、Al2O3Mole
Than for 18：291：5 (wherein x=0.03).Sintering aid MgO is added into ground powder, its quality dosage is total raw material
The 1% of powder, it is then 10 in vacuum-4Vacuum-sintering is carried out under conditions of Pa, sintering temperature is 1780 DEG C, soaking time
For 20 hours；Finally it is incubated 25 hours at 1400 DEG C to be annealed, furnace cooling obtains transparent fluorescent ceramic Y3Al5O12:
xCe3+, x=0.03.
Coating film treatment is carried out to transparent fluorescent ceramic：
The exiting surface of transparent fluorescent ceramic 1 is plated into anti-reflection film, obtains light extraction antireflective coating 2, incidence surface plates successively to be increased into light
Permeable membrane layer 3 obtains being totally reflected film layer, i.e. heat sink substrate knot with light total reflection film layer 4, non-light extraction and incidence surface plating total reflection film is entered
Total reflection film layer 5 is closed, as shown in Figure 2.
The semiconductor laser chip 7 that excitation wavelength is located to blue light is welded in heat sink substrate 6 with solder (tin cream etc.),
The transparent fluorescent ceramic 1 after coating film treatment is fixed on heat sink substrate (by aluminium nitride substrate aluminum oxide substrates or copper base etc. again
Other high heat conduction materials are made) on 6, and noise spectra of semiconductor lasers chip 7 realizes encapsulation, the exiting surface for making transparent fluorescent ceramic is
Sphere, that is, the laser white light emitting device that the present invention is used to illuminate or show is obtained, as shown in Figure 3.
The present invention prepare for the laser white light emitting device that illuminates or show, in use, semiconductor laser excites
Transparent fluorescent ceramic produces white light, as shown in Figure 4.
The integrating sphere measurement result of laser white light emitting device of the present invention is as shown in table 1.
The laser white light emitting device integrating sphere measurement data of table 1
It can be seen from the data in table 1 for current industry main flow white light emitting device, using the present invention's
White light obtained by laser white light emitting device has the advantages of high energy efficiency, high light flux and high thermal stability.
The spectral distribution graph of laser white light emitting device of the present invention is as shown in figure 5, using the present invention it can be seen from the figure
White light obtained by emission spectrum continuity is good, colour rendering is good.
There is white light caused by laser white light emitting device of the present invention high energy efficiency, bloom to lead to it can be seen from above-mentioned analysis
The characteristics of amount and high thermal stability.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., it should be included in the guarantor of the present invention
Within the scope of shield.
Claims (1)
- A kind of 1. laser white light emitting device for illuminating or showing, it is characterised in that：The excited white light light-emitting device bag Include heat sink substrate, semiconductor laser chip and transparent fluorescent ceramic；The semiconductor laser chip lasing blue light；The semiconductor laser chip is fixed in the heat sink substrate；The semiconductor laser chip is packaged by the transparent fluorescent ceramic；The semiconductor laser chip is welded in the heat sink substrate；The heat sink substrate is made up of aluminium, copper, aluminium nitride or aluminum oxide；The exiting surface of the transparent fluorescent ceramic is curved surface；The exiting surface plating anti-reflection film of the transparent fluorescent ceramic；The incidence surface of the transparent fluorescent ceramic plates anti-reflection film and reflectance coating successively；The non-exiting surface of the transparent fluorescent ceramic and non-incidence surface plating total reflection film；The molecular formula of the transparent fluorescent ceramic is Y3Al5O12:xCe3+, wherein,xFor 0.03；The transparent fluorescent ceramic is prepared according to the method comprised the following steps：Ceramic material powder and sintering aid is sintered produces；The ceramic material powder is Al2O3、Y2O3And CeO2；The sintering aid is MgO and SiO2At least one of；The sintering includes vacuum-sintering and the annealing carried out successively；The temperature of the vacuum-sintering is 1730 ~ 1800 DEG C, and soaking time is 5 ~ 30 hours, vacuum 10-1~10-4Pa；The condition of the annealing is：5 ~ 40 hours are incubated under conditions of 1200 ~ 1500 DEG C, then furnace cooling.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610329920.7A CN105826457B (en) | 2016-05-18 | 2016-05-18 | For the laser white light emitting device for illuminating or showing |
| PCT/CN2016/094605 WO2017197794A1 (en) | 2016-05-18 | 2016-08-11 | Laser white light emitting apparatus for lighting or display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610329920.7A CN105826457B (en) | 2016-05-18 | 2016-05-18 | For the laser white light emitting device for illuminating or showing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826457A CN105826457A (en) | 2016-08-03 |
| CN105826457B true CN105826457B (en) | 2018-01-09 |
Family
ID=56530913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610329920.7A Active CN105826457B (en) | 2016-05-18 | 2016-05-18 | For the laser white light emitting device for illuminating or showing |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105826457B (en) |
| WO (1) | WO2017197794A1 (en) |
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| CN105826457B (en) * | 2016-05-18 | 2018-01-09 | 中国人民大学 | For the laser white light emitting device for illuminating or showing |
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| CN112410033B (en) * | 2020-10-20 | 2023-06-30 | 青岛中科芯成照明技术有限公司 | Fluorescent material, fluorescent film material and high-heat-dissipation fluorescent film |
| CN112599509A (en) * | 2020-11-09 | 2021-04-02 | 新沂市锡沂高新材料产业技术研究院有限公司 | Solid-state illumination light source with high brightness and adjustable color temperature |
| CN113175629A (en) * | 2021-04-26 | 2021-07-27 | 中国科学院半导体研究所 | Laser lighting system based on perovskite quantum dot phosphor powder |
| CN114464608B (en) * | 2022-02-16 | 2022-11-15 | 深圳市旋彩电子有限公司 | COB (chip on board) double-color light source of photographic lamp and packaging method thereof |
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