CN112599509A - Solid-state illumination light source with high brightness and adjustable color temperature - Google Patents

Solid-state illumination light source with high brightness and adjustable color temperature Download PDF

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Publication number
CN112599509A
CN112599509A CN202011236185.8A CN202011236185A CN112599509A CN 112599509 A CN112599509 A CN 112599509A CN 202011236185 A CN202011236185 A CN 202011236185A CN 112599509 A CN112599509 A CN 112599509A
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light
color temperature
ceramic plate
high brightness
laser
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CN202011236185.8A
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Inventor
陈浩
张乐
康健
邵岑
申冰磊
张永丽
邱凡
罗泽
甄方正
李延彬
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Xinyi Xiyi High Tech Material Industry Technology Research Institute Co Ltd
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Xinyi Xiyi High Tech Material Industry Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Planar Illumination Modules (AREA)

Abstract

The invention belongs to the field of illumination, and particularly discloses a solid-state illumination light source with high brightness and adjustable color temperature.A packaging structure is adopted to integrate heat sinks of an LED (light-emitting diode) chip and an LD (laser diode) chip together, and then a mixed pump source excites the same fluorescent ceramic plate to obtain the solid-state illumination light source with high brightness; and the technical scheme that LD end face pumping (transmission type illumination structure) and an LED supplement blue light from the bottom surface of the fluorescent ceramic plate is adopted to realize the uniform distribution of the color temperature of the illumination light source. Namely, the laser diode side pumps the fluorescence conversion plate to obtain better transmission depth, so that blue light is fully utilized and laser leakage is avoided; meanwhile, uniformly emitted fluorescent light is obtained on the surface of the fluorescent plate, and light is supplemented by using a light-emitting diode, so that a white light source with uniformly distributed space chromaticity is obtained; meanwhile, solid-state lighting sources with different color temperatures and color coordinates can be obtained by controlling the output power of the LED chips.

Description

Solid-state illumination light source with high brightness and adjustable color temperature
Technical Field
The invention relates to the field of illumination, in particular to a solid-state illumination light source with high brightness and adjustable color temperature.
Background
At present, fluorescent powder is generally popularized and applied in the fields of low-power laser illumination and high-power LED illumination. To obtain a high lumen density solid state light source, the phosphor must withstand high power density excitation. As is well known, most of the fluorescent powder packaging materials are silica gel or epoxy resin; when the LD chip radiates blue light with high lumen density, waste heat generated in the light conversion process cannot be rapidly released due to the low thermal conductivity of the silica gel or epoxy resin, which causes local high temperature, which causes quenching of phosphor powder, reduces efficiency of fluorescence conversion, causes a decrease in luminous flux, and when severe, may cause carbonization of such light conversion material. The fluorescent ceramic material has the advantages of high thermal conductivity, good mechanical property, multiple types of luminescent ions, wide concentration range uniform doping, flexible structural design and the like, and can solve the problems of thermal quenching and light saturation.
In the existing laser lighting system using fluorescent ceramic as the light conversion material, in order to improve the brightness of laser lighting, a manner similar to that of an LED is generally adopted, and light emitted by a plurality of laser light sources is converged to the same point by using the characteristic that laser beams are concentrated, so as to meet the requirements of a smaller light emitting area and higher brightness. For example, patent 1 (CN 201820469119.7) proposes a light source structure for LED and LD mixed illumination, where the LED is cheap, the laser light source has high brightness, and the cost of the whole illumination unit is reduced while the length of each is increased. However, the following technical problems are obviously existed in the patent:
(1) the laser is placed on the reflective laser lighting structure on the upper surface of the fluorescent ceramic, and obvious laser blue spots exist; the industry has difficulty solving this problem.
(2) The laser excites the ceramic from the upper surface and emits the ceramic as a point light source; the LED is excited from the bottom surface and emits light from a surface light source; the two lights are mixed, so that the color temperature distribution of the illumination light source is extremely uneven, and the application field of the light source is severely limited. Therefore, further optimization is needed, and both emission light sources are designed to be surface light source emission (the LED is surface light source emission itself, and is difficult to become a point light source).
(3) The two excitation sources of the LED and the LD are far away, and heat dissipation needs to be carried out independently.
In addition, in a high-power laser lighting system, the color temperature of a light source is controlled by the material, so that the cost is high, the difficulty is high, and the realization possibility is extremely low. For example, in document 1 (High power laser-driven phosphor plate for external lighting conversion in application of automatic lighting), the concentration of luminescent ions doped in the fluorescent ceramic is increased to increase the absorption of blue light, thereby avoiding the phenomenon of "blue spots"; however, if the concentration of the luminescent ions is too high, the blue light content is too low, and a "yellow region" phenomenon occurs. Document 2 (Fabrication design for a high-quality laser diode-based ceramic converter for an a laser head lamp application) introduces pores using a pore former, and controls the color temperature of a light source by changing the pore content. But the porosity is easy to control, but the pore size is greatly different; meanwhile, the fluorescent ceramic contains second-phase Al2O3The components are difficult to accurately control the ratio of the three components to achieve the required color temperature of the light source.
Disclosure of Invention
Therefore, the LED and the heat sink of the LD chip are integrated together by adopting a packaging structure, and then the same fluorescent ceramic plate is excited by the mixed pump source to obtain a high-brightness solid-state lighting source; and the technical scheme that LD end face pumping (transmission type illumination structure) and an LED supplement blue light from the bottom surface of the fluorescent ceramic plate is adopted to realize the uniform distribution of the color temperature of the illumination light source. Namely, the laser diode side pumps the fluorescence conversion plate to obtain better transmission depth, so that blue light is fully utilized and laser leakage is avoided; meanwhile, uniformly emitted fluorescent light is obtained on the surface of the fluorescent plate, and light is supplemented by using a light-emitting diode, so that a white light source with uniformly distributed space chromaticity is obtained; meanwhile, solid-state lighting sources with different color temperatures and color coordinates can be obtained by controlling the output power of the LED chips.
The technical scheme of the invention is as follows:
a solid-state illumination light source with high brightness and adjustable color temperature is characterized by comprising a laser, a fluorescent ceramic plate, a substrate, a light guide layer and an LED chip; wherein, the basement center is equipped with U type recess, the laser instrument is fixed in the recess left side, places the left end face at the phosphor ceramic board, the basement is hugged closely to phosphor ceramic board right-hand member face, front and back surface, the laminating of LED chip is in basement recess bottom, set up the leaded light layer in the middle of LED chip and the lower bottom surface of phosphor ceramic board.
Preferably, the laser is a blue semiconductor laser, the output wavelength is 440-460 nm, and the output power of the blue light is 2-20W.
Preferably, the fluorescent ceramic plate is Ce-doped YAG (Y)3Al5O12) The Ce doping concentration of the fluorescent ceramic is 0.01-0.1 at.%, and the thickness of the fluorescent ceramic is 0.8-1.2 mm.
Preferably, the transmittance of the fluorescent ceramic plate at 800 nm is 80.0-84.4%.
Preferably, the average color temperature of the upper surface of the fluorescent ceramic plate is 3750-8000K, and the highest luminous flux is 960-6000 lm.
Preferably, the light guide layer is one of transparent silicone grease or a dichroic mirror.
Preferably, the emission wavelength of the LED chip is 440-460 nm, and the output blue light power is 2-10W.
Preferably, the laser emits blue light, and the blue light enters the fluorescent ceramic plate from the left end face of the fluorescent ceramic plate; the fluorescent ceramic plate fully absorbs high-power blue light and emits yellow light, and the high-power blue light and the yellow light are uniformly distributed on the upper surface of the fluorescent ceramic plate; after the blue light emitted by the LED chip passes through the light guide layer, part of the blue light is absorbed by the fluorescent ceramic plate and converted into yellow light, and the rest part of the blue light passes through the fluorescent ceramic plate and is mixed with the yellow light to form white light with uniform chromaticity. By changing the power of the LED chip, more blue light can penetrate through the LED chip, and the color temperature can be further changed.
Compared with the prior art, the invention has the following beneficial effects:
1. at present, a transmission type illumination structure is widely used in a laser illumination system, namely, a blue LD front surface excites fluorescent ceramic, so that the problem that blue light spots are concentrated in a central area (caused by the fact that a laser device has too high power density and penetrates through the fluorescent ceramic) can occur; in the reflective lighting structure, a significant blue spot of laser light (caused by the reflection of the surface of the fluorescent ceramic) appears on the upper surface of the fluorescent ceramic. Based on a transmission type illumination scheme, the invention adopts a laser diode to pump from the end face of the fluorescent ceramic, thereby avoiding blue light spots on the upper surface of the fluorescent ceramic; meanwhile, better transmission depth can be obtained from end pumping, so that the blue light of the LD is fully converted into yellow light, is uniformly distributed on the upper surface of the fluorescent ceramic, and is mixed with the blue light LED to form a light source with uniformly distributed color temperature.
2. At present, most of laser lighting white light sources are single color temperature light sources. According to the invention, by adding the LED blue light chip and adjusting the power of the LED, mixed illumination light sources (4500K-7500K) with different color temperatures can be obtained, the problem of single color temperature of the laser white light source is solved, and meanwhile, the cost and the light path design problem of using a plurality of lasers as excitation sources can be effectively reduced.
3. Compared with the scheme of separating the LED and the LD, the novel packaging scheme of integrating the LED and the LD is greatly beneficial to miniaturization and reduction of the cost of a light source.
Drawings
FIG. 1 is a front view of a high brightness, tunable color temperature solid state illumination source of the present invention;
FIG. 2 is a top view of a high brightness, tunable color temperature solid state illumination source according to the present invention;
FIG. 3 is a schematic diagram of a high brightness and color temperature adjustable solid state illumination light source according to the present invention.
Detailed Description
The invention is described in detail below with reference to specific examples.
Example 1
As shown in fig. 1-2, a laser 10, a fluorescent ceramic plate 20, a substrate 30, a light guide layer 40, and an LED chip 50 are prepared; wherein, basement 30 center is equipped with U type recess, laser instrument 10 is fixed in the recess left side, places the left end face at phosphor ceramic plate 20, basement 30 is hugged closely to phosphor ceramic plate 20 right-hand member face, front and back surface, the laminating of LED chip 50 is in basement 30 recess bottom, set up leaded light layer 40 in the middle of LED chip 50 and phosphor ceramic plate 20's the lower bottom surface.
The light guide layer 40 is transparent silicone grease.
The laser 10 is a blue semiconductor laser.
The output wavelength of the laser 10 is 440 nm, and the output power of blue light is 2W.
The fluorescent ceramic plate 20 is a Ce-doped YAG fluorescent ceramic; wherein, the doping concentration of Ce3+ is 0.1 at%, the thickness of the fluorescent ceramic plate is 0.8 mm, the width is 3 mm, the length is 10 mm, the linear transmittance at 800 nm is 80.0%, and the surface is smoothed.
The emission wavelength of the LED chip 50 is 440 nm, and the output blue power is 2W.
As shown in fig. 3, the laser 10 emits blue light, which enters the phosphor plate 20 from the left end face of the phosphor plate 20; the fluorescent ceramic plate 20 sufficiently absorbs the high-power blue light and emits yellow light, which is uniformly distributed on the upper surface thereof; after passing through the light guide layer 40, part of the blue light emitted from the LED chip 50 is absorbed by the fluorescent ceramic plate 20 and converted into yellow light, and the rest of the blue light passes through the fluorescent ceramic plate 20 and is mixed with the yellow light, thereby forming white light with uniform chromaticity.
When the output blue light power of the laser 10 is 2W and the output blue light power of the LED chip 50 is 0.5W, the operating temperature of the fluorescent ceramic plate 20 is 38 ℃, the average color temperature at the upper surface is 4265K, and the luminous flux is 675 lm; when the output blue light power of the laser 10 is 2W and the output blue light power of the LED chip 50 is 1W, the operating temperature of the fluorescent ceramic plate 20 is 42 ℃, the average color temperature at the upper surface is 5540K, and the luminous flux is 782 lm; when the output blue power of the laser 10 is 2W and the output blue power of the LED chip 50 is 2W, the operating temperature of the phosphor plate 20 is 48 ℃, the average color temperature at the upper surface is 8000K, and the luminous flux is up to 960 lm. The color temperature of the solid-state lighting source can be regulated and controlled within the range of 4265-8000K by regulating the output power of the LED.
Example 2
As shown in fig. 1-2, a laser 10, a fluorescent ceramic plate 20, a substrate 30, a light guide layer 40, and an LED chip 50 are prepared; wherein, basement 30 center is equipped with U type recess, laser instrument 10 is fixed in the recess left side, places the left end face at phosphor ceramic plate 20, basement 30 is hugged closely to phosphor ceramic plate 20 right-hand member face, front and back surface, the laminating of LED chip 50 is in basement 30 recess bottom, set up leaded light layer 40 in the middle of LED chip 50 and phosphor ceramic plate 20's the lower bottom surface.
The light guide layer 40 is a dichroic mirror.
The laser 10 is a blue semiconductor laser.
The output wavelength of the laser 10 is 460 nm, and the output power of blue light is 20W.
The fluorescent ceramic plate 20 is a Ce-doped YAG fluorescent ceramic; wherein, the doping concentration of Ce3+ is 0.01 at%, the thickness of the fluorescent ceramic plate 20 is 1.2 mm, the width is 20 mm, the length is 20 mm, the linear transmittance at 800 nm is 84.4%, and the surface is smoothed;
the emission wavelength of the LED chip 50 is 460 nm, and the output blue power is 10W.
The light guide layer 40 is highly transparent at 440-480 nm and highly reflective at 500-800 nm.
As shown in fig. 3, laser 10 emits blue light, which enters phosphor plate 20 from the left end face of phosphor plate 20; the fluorescent ceramic plate 20 sufficiently absorbs the high-power blue light and emits yellow light, which is uniformly distributed on the upper surface thereof; after passing through the light guide layer 40, part of the blue light emitted from the LED chip 50 is absorbed by the phosphor plate 20 and converted into yellow light, and the rest of the blue light passes through the phosphor plate 20 and is mixed with the yellow light, thereby forming white light with uniform chromaticity.
When the output blue light power of the laser 10 is 2W and the output blue light power of the LED chip 50 is 0.5W, the operating temperature of the fluorescent ceramic plate 20 is 32 ℃, the average color temperature at the upper surface is 4320K, the luminous flux is 745 lm, and the light utilization ratio is higher by using a dichromatic mirror compared with transparent silica gel; when the output blue light power of the laser 10 is 20W and the output blue light power of the LED chip 50 is 1W, the operating temperature of the fluorescent ceramic plate 20 is 82 ℃, the average color temperature at the upper surface is 3750K, and the luminous flux is 5250 lm; when the output blue light power of the laser 10 is 20W and the output blue light power of the LED chip 50 is 5W, the operating temperature of the fluorescent ceramic plate 20 is 90 ℃, the average color temperature at the upper surface is 4890K, and the luminous flux is 5744 lm; when the output blue power of the laser 10 is 20W and the output blue power of the LED chip 50 is 10W, the operating temperature of the phosphor plate 20 is 142 ℃, the phosphor plate 20 has thermal quenching to a certain extent, the average color temperature at the upper surface is 6250K, and the light flux is 6000 lm. The color temperature of the solid-state lighting source can be regulated and controlled within the range of 3750-6250K by regulating the output power of the LED.
It should be noted that while the foregoing has described the spirit and principles of the invention with reference to several specific embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, nor is the division of aspects, which is for convenience only as the features in these aspects cannot be combined. The invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (8)

1. A solid-state illumination light source with high brightness and adjustable color temperature is characterized by comprising a laser (10), a fluorescent ceramic plate (20), a substrate (30), a light guide layer (40) and an LED chip (50); wherein, basement (30) center is equipped with U type recess, laser instrument (10) are fixed in the recess left side, place the left end face at phosphor ceramic plate (20), basement (30) are hugged closely to phosphor ceramic plate (20) right-hand member face, front and back surface, laminating of LED chip (50) is in basement (30) recess bottom, set up leaded light layer (40) in the middle of LED chip (50) and the lower bottom surface of phosphor ceramic plate (20).
2. A high brightness, color temperature tunable solid state illumination source as claimed in claim 1, characterized in that said laser (10) is a blue semiconductor laser, the output wavelength is 440-460 nm, and the output power of blue light is 2-20W.
3. A high brightness, color temperature tunable solid state illumination source as claimed in claim 1, characterized in that said phosphor plate (20) is Ce doped YAG (Y)3Al5O12) The Ce doping concentration of the fluorescent ceramic is 0.01-0.1 at.%, and the thickness of the fluorescent ceramic is 0.8-1.2 mm.
4. A high brightness, color temperature tunable solid state illumination source as claimed in claim 1, wherein said phosphor plate (20) has a linear transmittance at 800 nm of 80.0 to 84.4%.
5. A high brightness, color temperature tunable solid state illumination source as claimed in claim 1, characterized in that the average color temperature at the upper surface of the fluorescent ceramic plate (20) is 3750-8000K and the maximum luminous flux is 960-6000 lm.
6. A high brightness, color temperature tunable solid state illumination source as claimed in claim 1 wherein said light guiding layer (40) is one of a clear silicone grease or a dichroic mirror.
7. The solid-state illumination source with high brightness and adjustable color temperature of claim 1, wherein the LED chip (50) has an emission wavelength of 440-460 nm and an output blue power of 2-10W.
8. A high brightness, color temperature tunable solid state illumination source as claimed in claim 1 wherein said laser (10) emits blue light into said phosphor plate (20) from a left end face of said phosphor plate (20); the fluorescent ceramic plate (20) fully absorbs high-power blue light and emits yellow light, and the yellow light is uniformly distributed on the upper surface of the fluorescent ceramic plate; after the blue light emitted by the LED chip (50) passes through the light guide layer (40), part of the blue light is absorbed by the fluorescent ceramic plate (20) and converted into yellow light, and the rest of the blue light passes through the fluorescent ceramic plate (20) and is mixed with the yellow light to form white light with uniform chromaticity, so that the power of the LED chip (50) is changed, more blue light can penetrate through the LED chip, and the color temperature is changed.
CN202011236185.8A 2020-11-09 2020-11-09 Solid-state illumination light source with high brightness and adjustable color temperature Pending CN112599509A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487763A (en) * 2012-07-31 2015-04-01 三菱电机株式会社 Liquid crystal display
CN105826457A (en) * 2016-05-18 2016-08-03 中国人民大学 Laser white light emitting device for lighting or display
US20160268482A1 (en) * 2014-06-05 2016-09-15 Shanghai Fudi Lighting Electronic. Co., Ltd. Embedded white light led package structure based on solid-state fluorescence material and manufacturing method thereof
CN206118133U (en) * 2016-10-09 2017-04-19 超视界激光科技（苏州）有限公司 Laser source module
CN110454693A (en) * 2019-08-14 2019-11-15 浙江比肯科技有限公司 A kind of LED luminescence unit using laser enhancing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487763A (en) * 2012-07-31 2015-04-01 三菱电机株式会社 Liquid crystal display
US20160268482A1 (en) * 2014-06-05 2016-09-15 Shanghai Fudi Lighting Electronic. Co., Ltd. Embedded white light led package structure based on solid-state fluorescence material and manufacturing method thereof
CN105826457A (en) * 2016-05-18 2016-08-03 中国人民大学 Laser white light emitting device for lighting or display
CN206118133U (en) * 2016-10-09 2017-04-19 超视界激光科技（苏州）有限公司 Laser source module
CN110454693A (en) * 2019-08-14 2019-11-15 浙江比肯科技有限公司 A kind of LED luminescence unit using laser enhancing

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