CN105826399A - 一种多混合结构的软快恢复二极管及其制备方法 - Google Patents
一种多混合结构的软快恢复二极管及其制备方法 Download PDFInfo
- Publication number
- CN105826399A CN105826399A CN201610353299.8A CN201610353299A CN105826399A CN 105826399 A CN105826399 A CN 105826399A CN 201610353299 A CN201610353299 A CN 201610353299A CN 105826399 A CN105826399 A CN 105826399A
- Authority
- CN
- China
- Prior art keywords
- concentration
- knot
- diode
- fast recovery
- recovery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000203 mixture Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610353299.8A CN105826399A (zh) | 2016-05-25 | 2016-05-25 | 一种多混合结构的软快恢复二极管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610353299.8A CN105826399A (zh) | 2016-05-25 | 2016-05-25 | 一种多混合结构的软快恢复二极管及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105826399A true CN105826399A (zh) | 2016-08-03 |
Family
ID=56531198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610353299.8A Pending CN105826399A (zh) | 2016-05-25 | 2016-05-25 | 一种多混合结构的软快恢复二极管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105826399A (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298512A (zh) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | 一种快恢复二极管及其制备方法 |
CN106571402A (zh) * | 2016-11-18 | 2017-04-19 | 吉林瑞能半导体有限公司 | 一种快恢复功率二极管及其制造方法 |
CN109103094A (zh) * | 2018-07-13 | 2018-12-28 | 张家港意发功率半导体有限公司 | 一种混合pin/肖特基快恢复二极管的制备方法 |
CN109148605A (zh) * | 2017-06-19 | 2019-01-04 | 宁波比亚迪半导体有限公司 | 快恢复二极管及制备方法、电子设备 |
CN111211157A (zh) * | 2018-11-21 | 2020-05-29 | 深圳比亚迪微电子有限公司 | 快恢复二极管及其制备方法 |
CN112310188A (zh) * | 2019-07-23 | 2021-02-02 | 珠海格力电器股份有限公司 | 横向变掺杂终端结构及其制造方法 |
CN112786708A (zh) * | 2021-03-04 | 2021-05-11 | 深圳吉华微特电子有限公司 | 一种超低vf软快恢复二极管及其制造方法 |
CN113053993A (zh) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | 一种快恢复二极管芯片 |
CN114203830A (zh) * | 2021-11-30 | 2022-03-18 | 深圳基本半导体有限公司 | 一种frd结构及其制作方法和应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575100A (ja) * | 1991-09-13 | 1993-03-26 | Hitachi Ltd | 半導体整流素子 |
JPH05218389A (ja) * | 1991-11-21 | 1993-08-27 | Fuji Electric Co Ltd | 半導体整流素子およびその使用方法 |
JP2000077682A (ja) * | 1998-08-28 | 2000-03-14 | Hitachi Ltd | ショットキーダイオード |
DE102005020091A1 (de) * | 2005-04-29 | 2006-11-09 | Infineon Technologies Austria Ag | Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung |
JP2014022438A (ja) * | 2012-07-13 | 2014-02-03 | Rohm Co Ltd | ジャンクションバリアショットキーダイオードおよびその製造方法 |
US20140145289A1 (en) * | 2012-11-27 | 2014-05-29 | Cree, Inc. | Schottky structure employing central implants between junction barrier elements |
CN104756258A (zh) * | 2012-10-11 | 2015-07-01 | 三菱电机株式会社 | 半导体器件及其制造方法 |
-
2016
- 2016-05-25 CN CN201610353299.8A patent/CN105826399A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575100A (ja) * | 1991-09-13 | 1993-03-26 | Hitachi Ltd | 半導体整流素子 |
JPH05218389A (ja) * | 1991-11-21 | 1993-08-27 | Fuji Electric Co Ltd | 半導体整流素子およびその使用方法 |
JP2000077682A (ja) * | 1998-08-28 | 2000-03-14 | Hitachi Ltd | ショットキーダイオード |
DE102005020091A1 (de) * | 2005-04-29 | 2006-11-09 | Infineon Technologies Austria Ag | Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung |
JP2014022438A (ja) * | 2012-07-13 | 2014-02-03 | Rohm Co Ltd | ジャンクションバリアショットキーダイオードおよびその製造方法 |
CN104756258A (zh) * | 2012-10-11 | 2015-07-01 | 三菱电机株式会社 | 半导体器件及其制造方法 |
US20140145289A1 (en) * | 2012-11-27 | 2014-05-29 | Cree, Inc. | Schottky structure employing central implants between junction barrier elements |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298512A (zh) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | 一种快恢复二极管及其制备方法 |
CN106298512B (zh) * | 2016-09-22 | 2024-05-14 | 全球能源互联网研究院 | 一种快恢复二极管及其制备方法 |
CN106571402A (zh) * | 2016-11-18 | 2017-04-19 | 吉林瑞能半导体有限公司 | 一种快恢复功率二极管及其制造方法 |
CN106571402B (zh) * | 2016-11-18 | 2024-03-29 | 吉林瑞能半导体有限公司 | 一种快恢复功率二极管及其制造方法 |
CN109148605A (zh) * | 2017-06-19 | 2019-01-04 | 宁波比亚迪半导体有限公司 | 快恢复二极管及制备方法、电子设备 |
CN109148605B (zh) * | 2017-06-19 | 2022-02-18 | 比亚迪半导体股份有限公司 | 快恢复二极管及制备方法、电子设备 |
CN109103094B (zh) * | 2018-07-13 | 2021-07-16 | 张家港意发功率半导体有限公司 | 一种混合pin/肖特基快恢复二极管的制备方法 |
CN109103094A (zh) * | 2018-07-13 | 2018-12-28 | 张家港意发功率半导体有限公司 | 一种混合pin/肖特基快恢复二极管的制备方法 |
CN111211157A (zh) * | 2018-11-21 | 2020-05-29 | 深圳比亚迪微电子有限公司 | 快恢复二极管及其制备方法 |
EP3886175A4 (en) * | 2018-11-21 | 2021-12-29 | BYD Semiconductor Company Limited | Fast recovery diode and manufacturing method thereof |
US20220059707A1 (en) * | 2018-11-21 | 2022-02-24 | Byd Semiconductor Company Limited | Fast recovery diode and manufacturing method thereof |
CN112310188A (zh) * | 2019-07-23 | 2021-02-02 | 珠海格力电器股份有限公司 | 横向变掺杂终端结构及其制造方法 |
CN113053993A (zh) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | 一种快恢复二极管芯片 |
CN113053993B (zh) * | 2019-12-27 | 2022-06-24 | 株洲中车时代半导体有限公司 | 一种快恢复二极管芯片 |
CN112786708B (zh) * | 2021-03-04 | 2022-03-08 | 深圳吉华微特电子有限公司 | 一种超低vf软快恢复二极管 |
CN112786708A (zh) * | 2021-03-04 | 2021-05-11 | 深圳吉华微特电子有限公司 | 一种超低vf软快恢复二极管及其制造方法 |
CN114203830A (zh) * | 2021-11-30 | 2022-03-18 | 深圳基本半导体有限公司 | 一种frd结构及其制作方法和应用 |
CN114203830B (zh) * | 2021-11-30 | 2023-02-24 | 深圳基本半导体有限公司 | 一种frd结构及其制作方法和应用 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105826399A (zh) | 一种多混合结构的软快恢复二极管及其制备方法 | |
JP5787853B2 (ja) | 電力用半導体装置 | |
CN101981700B (zh) | 用于碳化硅器件的双保护环边缘终端和制造具有双保护环边缘终端的碳化硅器件的方法 | |
CN101540343B (zh) | 偏移场板结构的4H-SiC PiN/肖特基二极管及其制作方法 | |
CN103208531B (zh) | 一种快恢复二极管frd芯片及其制作方法 | |
CN102544114B (zh) | 一种积累型槽栅二极管 | |
CN103872144B (zh) | 一种软快恢复二极管及其制造方法 | |
CN104051547A (zh) | 一种高压快速软恢复二极管及其制备方法 | |
CN101540283A (zh) | 场限环结构的4H-SiC PiN/肖特基二极管制作方法 | |
CN102593154B (zh) | 一种具有p型埋层结构的槽栅二极管 | |
CN103022154B (zh) | 一种快速恢复二极管及制造方法 | |
CN102709317B (zh) | 一种低开启电压二极管 | |
CN106298970A (zh) | 一种高压快速软恢复二极管及其制造方法 | |
CN107393970B (zh) | 一种碳化硅结势垒二极管 | |
CN203179900U (zh) | 一种快恢复二极管frd芯片 | |
CN102263139A (zh) | 一种改进的混合整流二极管结构 | |
CN205680688U (zh) | 一种多混合结构的软快恢复二极管 | |
CN205177857U (zh) | 一种快恢复二极管 | |
Pfaffenlehner et al. | Optimization of diodes using the SPEED concept and CIBH | |
CN110534582B (zh) | 一种具有复合结构的快恢复二极管及其制造方法 | |
JP6362702B2 (ja) | バイポーラノンパンチスルーパワー半導体デバイス | |
CN108550630B (zh) | 一种二极管及其制作方法 | |
JP2016167597A (ja) | トレンチ・ショットキー・バリア・ショットキーダイオードを備える半導体装置 | |
CN112242449A (zh) | 一种基于SiC衬底沟槽型MPS二极管元胞结构 | |
JP6930113B2 (ja) | 半導体装置および半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190823 Address after: Room A-430, 4th Floor, Block A, Phase II, Guangxi Huike Science and Technology Co., Ltd., 336 East Extension Line of Beihai Avenue, Beihai Industrial Park, Guangxi Zhuang Autonomous Region Applicant after: Beihai Hui Ke Photoelectric Technology Co., Ltd. Address before: Room 303-45, 33 Block 680 Guiping Road, Xuhui District, Shanghai, 2003 Applicant before: Shanghai Anwei Electronic Co., Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210421 Address after: Room 301, 3rd floor, building 16, Guangxi Huike Technology Co., Ltd., No. 336, East extension of Beihai Avenue, Beihai Industrial Park, 536000, Guangxi Zhuang Autonomous Region Applicant after: Beihai Huike Semiconductor Technology Co.,Ltd. Address before: Room A-430, 4th Floor, Block A, Phase II, Guangxi Huike Science and Technology Co., Ltd., 336 East Extension Line of Beihai Avenue, Beihai Industrial Park, Guangxi Zhuang Autonomous Region Applicant before: BEIHAI HKC PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
|
TA01 | Transfer of patent application right |