CN105810820A - Porous structure organic field effect transistor photosensitive memory and preparation method thereof - Google Patents
Porous structure organic field effect transistor photosensitive memory and preparation method thereof Download PDFInfo
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
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- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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Abstract
The invention relates to a porous structure organic field effect transistor photosensitive memory and a preparation method thereof, and belongs to the field of semiconductor industry memory technologies and biofilm technologies. The memory comprises source and drain electrodes, an organic photosensitive semiconductor, a porous polymer film layer and a gate insulating layer which are arranged from top to bottom in sequence. The polymer film layer of a porous structure is arranged between the organic photosensitive semiconductor and the gate insulating layer. The source and drain electrodes and the organic photosensitive semiconductor are totally or partially of a porous structure which grows periodically. According to the invention, a spin-coating method is adopted to prepare the polymer film layer of the porous structure on a gate insulating layer substrate, and the polymer film layer is used as a porous template layer, the organic photosensitive semiconductor and the metal source and drain electrodes are induced to form the periodic porous growing features. The storage performance and the photosensitive performance of the device are improved by simple process means, the storage capacity, the switching speed and the light response capability are substantially improved, the preparation cost is lowered, and the popularization and the application are facilitated.
Description
Technical field
The invention belongs to semicon industry memory technology and optical detector technology field, be specifically related to a kind of photosensitive memorizer of organic field effect tube and preparation method thereof.
Background technology
Organic field effect tube as the basic components and parts in electronic circuit, because of its have material source extensively, soft, the simple feature of processing technique, and can be applicable to large area typography, be especially suitable for wearable electronic industrial development direction of future generation.Simultaneously organic field effect tube determines it its structure and has abundant function application, such as luminescence, storage, sensing, switch etc., is therefore with a wide range of applications at information electronic applications.
As a kind of multifunctional unit device, organic photosensitive field-effect transistor electrical storage (OPTM) is organic field effect tube memorizer (OFET) and organic photodetector (OrganicPhototransistors, OPTs) integrated device, can be applicable to novel display components and parts or RFID tag.In order to obtain the OPTM device of practicality, substantial amounts of new material and the preparation technology of some advanced persons, modifying interface technique obtain everybody extensive concern.At present, in document, the method for improving OPTM performance of report mainly has: (1) design, synthesis have the organic semiconducting materials of high light sensitive characteristic, high mobility, the absorption in full spectral region can be realized, so can improve the effectively utilization (Adv.Mater.2015 to incident illumination, 27,6885；Sci.Rep.,2015,5,16457.)；(2) design, the macromolecular material (Adv.Funct.Mater.2008,18,3678) that synthesis has nonplanar structure, hydrophobicity is strong, dielectric constant is little, to strengthen catching and storing electric charge；(3) device architecture (Adv.Mater.2015,27,228 such as physical doping, multi-heterostructure-layers is adopted；J.Mater.Chem.C, 2015,3,3173), strengthen light-generated excitons separation efficiency, promote charge storage density and time data memory；(4) introducing is changed rare earth material or photosensitive polymer (Sci.Rep., 2015,5,14998.), constitute associating photosensitive layer with semiconductor photoactive layer, improve photoelectric transformation efficiency.Although above-mentioned measure all can boost device performance in some degree.But there is also that new material development cost is high, cycle length and the shortcoming such as technological process is complicated, equipment manufacturing cost is higher.
From progress overall both at home and abroad at present, OPTM still faces following challenge: (1) current studying remains unchanged and be concentrated mainly on the memory phenomenon to OPTM and storage behavioral study, and the common enhancement effect of photoresponse and storage characteristics is lacked research；(2) operation overtension (>100V), speed of photoresponse excessively slow (incident illumination>1s), memory density low (being difficult to multistage storage), light-to-dark-currents ratio relatively low (<100), data stability is poor (holds time<105s)；(3) photoinduced electricity Ultrahigh needs to be explained further and System Approach.
The present invention provides a kind of photosensitive memorizer of organic field effect tube with loose structure and preparation method thereof, described photosensitive memorizer can improve its photoresponse and storage characteristics simultaneously, and has the features such as low operating voltage, high speed of photoresponse, high storage density and high data stability.
Summary of the invention
Above-mentioned technical problem is there is for existing OPTM, the present invention proposes a kind of photosensitive memorizer of loose structure organic field effect tube and preparation method thereof, it does not increase technique, technical difficulty on the basis of current material, the preparation of a kind of simple process means is provided to have the thin polymer film of loose structure, and it is applied in the middle of OPTM memorizer, serve as the charge storage layer of memorizer, photosensitive enhancement layer and multiple-hole die flaggy, to improve memory property and photosensitive property simultaneously.
The technical scheme that the present invention proposes is: a kind of photosensitive memorizer of loose structure organic field effect tube, include source-drain electrode, organic photosensitive quasiconductor, gate insulation layer from top to bottom successively, it is characterized in that: be provided with the polymer film layer of loose structure, described source-drain electrode and organic photosensitive quasiconductor between described organic photosensitive quasiconductor and gate insulation layer and be all or part of the loose structure of cyclical growth.
In further technical scheme, described photosensitive memorizer also includes substrate and is formed at the gate electrode of this substrate.Other structures of described photosensitive memorizer are be covered in the gate insulation layer on this gate electrode, it is formed at the polymer film layer with loose structure on this gate insulation layer, it is formed at the porous organic photosensitive semiconductor layer on this porous structure polymer thin layer, and is formed at the source-drain electrode of these porous organic photosensitive semiconductor layer surface channel region both sides.
The material that described substrate adopts is highly doped silicon chip, sheet glass or plastics PET.
The material that described gate electrode adopts is highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum.
Described gate insulation layer covers whole surface gate electrode, the contact between isolated gate electrode and porous polymer film layer, and its insulating properties is good；The material that described gate insulation layer adopts is silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 50～300nm.
Polymer in the polymer film layer of described loose structure is selected from low-k polymer materials, and described low dielectric constant polymer material is selected from Polyvinyl carbazole, polystyrene or polymethyl-benzene e pioic acid methyl ester.The film thickness of the polymer film layer of described loose structure is 25～70nm.
The material that described organic photosensitive semiconductor layer adopts is Benzo[b, aphthacene, titan bronze, titanium fluoride bronze, rubrene, anthracene or 3-hexyl thiophene；Described organic photosensitive semiconductor layer adopts thermal vacuum evaporation film-forming method film forming, cover formation conducting channel in gate electrode insulation surface, making it be in close contact to reduce contact berrier during carrier tunnelling with polymer film layer, promote that the tunnelling of carrier migrates, its thickness is 30～50nm.
Described source-drain electrode is grown in conducting channel both sides, and its material adopted is metal or organic conductor material, and its thickness is 60～100nm, and its preparation method is magnetron sputtering method or ink-jet printing process, vacuum vapour deposition；Preferably, described source-drain electrode materials is copper or gold.
The preparation method that present invention also offers the above-mentioned photosensitive memorizer of loose structure organic field effect tube, specifically includes following steps:
(1) configuration advanced low-k materials polymer solution, is dissolved in low boiling point solvent, and its concentration is 5～10mg/ml；
(2) selecting suitable backing material as substrate, and form gate electrode and gate insulation layer on substrate, the thickness of gate insulation layer thin film is 50～300nm, cleans up substrate post-drying；
(3) UV ozone is used to process 3～5min the clean substrate after drying；
(4) solution that spin-coating step (1) above the substrate of preparation in step (3) configure, thickness is 25～70nm, by sample good for spin coating in glove box 80 DEG C dry；
(5) vacuum evaporation semiconductor photoactive layer and source-drain electrode above the sample prepared in step (3).
Preferably, the low boiling point solvent in step (1) is chloroform or oxolane, and without the process that dewaters
Preferably, spin coating in atmosphere in step (4), air humidity controls 40～50%；In dry run, remove the aqueous phase in residual solvent and thin film, obtain the thin polymer film with loose structure.
Preferably, the light-sensitive semiconductor material of step (5) described vacuum evaporation is Benzo[b, and evaporation rate isVacuum degree control is 6 × 10-5Pa～6 × 10-4Pa, adopts crystal oscillator to control thickness at 30～50nm；The described vacuum evaporation source-drain electrode of step (6) is copper, evaporation rateControl thickness at 60～100nm.
Porous polymer film and preparation method thereof is applied in the middle of the photosensitive memorizer of organic field effect tube by the present invention, serve as the polymer film layer of the source-drain electrode of electric charge storage of device, photosensitive semiconductor layer and foraminous die plate, specifically refer to serve as porous polymer film multiple-hole die flaggy, induce the periodicity porous pattern growth of organic photosensitive semiconductor layer, metal source and drain electrodes.This loose structure, utilize many effect of holes of metal electrode on the one hand, reduce the contact resistance at metal/organic semiconductor interface, utilize many effect of holes of organic photosensitive semiconductor layer on the other hand, strengthen the collection efficiency to incident illumination of semiconductor photoactive layer, improve light-generated excitons separation efficiency, regulate thin film tunneling barrier, improve device memory property.By measuring the surface topography of device electric property and loose structure, it can be determined that the porous polymer film improvement to photosensitive memory performance.
This preparation method preparing porous polymer film provided by the invention, simply select without the low boiling point solvent processed that additionally dewaters as foraminous die plate, in the air that humidity is 40～50%, Breath-figure principle is utilized to make droplet and polymer solution form uniform solution, utilize template-spin-coating method spin-coating film, the dry thin polymer film obtaining there is loose structure.The method technique is simple, it is simple to operation, reduces human cost.
There is advantages that 1, this organic field effect tube memory construction provided by the invention, process complexity can not increased and under premise prepared by simple equipment, the effective raising device collection efficiency to incident illumination, strengthen photoelectric transformation efficiency, reduce contact resistance and electric charge tunneling barrier, thus reducing the dependence to operation voltage, reducing energy loss, a kind of feasible thinking of offer is promoted in the commercialization for organic photosensitive memorizer；2, described memory construction simultaneously improves memory property and the photosensitive property of photosensitive memorizer；3, described memory construction can adopt metallic copper as device source drain electrode, reduces device preparation cost, it is simple to promotes, apply；4, the preparation method of organic field effect tube memorizer provided by the invention, the method technique is simple, it is simple to operation, reduces human cost.
Accompanying drawing explanation
Below in conjunction with accompanying drawing being described further the present invention.
Fig. 1 is the structural representation of the photosensitive memorizer of loose structure organic field effect tube of the present invention；
Fig. 2 is the AFM photo of the Polyvinyl carbazole thin film in embodiment 1 with loose structure；
Fig. 3 is the AFM photo of the organic photosensitive semiconductor layer in embodiment 1 with loose structure；
Fig. 4 is the AFM photo of the copper electrode in embodiment 1 with loose structure；
Fig. 5 is the transfer characteristic curve of the organic field effect tube memory test in embodiment 1 based on loose structure；
Fig. 6 is the memory window characteristic curve in embodiment 1 based on the photosensitive memory test of the organic field effect tube of loose structure；
Fig. 7 is the write-reading-erasing-reading characteristic curve in embodiment 1 based on the photosensitive memory test of the organic field effect tube of loose structure；
Fig. 8 holds time characteristic curve based on the memory property of the photosensitive memory test of the organic field effect tube of loose structure in embodiment 1；
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.But the technology contents of the present invention is not limited to the restriction of following embodiment.
Embodiment 1
The invention provides a kind of organic field effect tube memory construction, its structural representation is as it is shown in figure 1, include:
Substrate；
It is formed at the gate electrode of this substrate；
It is covered in the gate insulation layer on this gate electrode；
It is formed at the polymer film layer with loose structure on this gate insulation layer；
It is formed at the porous organic photosensitive semiconductor layer on porous polymer film layer；And
It is formed at the porous source-drain electrode of these porous organic photosensitive semiconductor layer surface channel region both sides.
Described substrate is highly doped silicon chip or sheet glass or plastics PET.
In the technical scheme of the present embodiment, heavily doped silicon is as substrate and gate electrode；One layer of 50～300nm silicon dioxide is as gate insulation layer；The polymer film layer with loose structure is made up of the polymer polyethylene base carbazole with loose structure, and its thickness is 25～70nm；It is deposited with Benzo[b thick for one layer of 30～50nm above gate insulation layer and serves as organic photosensitive semiconductor layer；Again at conducting channel both sides evaporation metal copper as source-drain electrode.
The present embodiment considers that device preparation cost and later stage commercialization are promoted, and elite metallic copper is as electrode, but not conventional gold serves as source-drain electrode.The described polymer film layer with loose structure is by Polyvinyl carbazole (PVK), with chloroform (CHCl3) it is configured to solution as solvent, adopt the thin film with loose structure prepared by Breath-figure principle and spin-coating film technique.
When prepared by reality, laboratory room temperature is maintained at about 25 DEG C, and indoor humidity is maintained at less than 50%.
The concrete preparation process of memorizer described in the present embodiment is as follows:
(1) configuration Polyvinyl carbazole (PVK) solution, solution concentration is 10mg/ml, and solvent is without the chloroform (CHCl processed that additionally dewaters3) stand 24h so that it is it is uniformly dispersed；
(2) surface is had the heavily doped silicon of 300nm silicon dioxide successively with acetone, ethanol, each ultrasonic cleaning 10min of deionized water, supersonic frequency is 100KHz, dry up to ensure that substrate surface is clean by substrate surface liquid with high pure nitrogen again, put into afterwards in the baking oven of 120 DEG C and dry；
(3) dried in step (2) substrate is placed and is processed 3min in UV ozone machine；
(4) in atmosphere, air humidity is 40%, the solution that the substrate surface spin-coating step (1) step (3) handled well has configured, and spin coating rotating speed is slow-speed of revolution 2000r/min, spin-coating time 30s, plastics thickness control is at about 50nm；In nitrogen glove box, the substrate that spin coating is good being placed on drying and annealing 30min on the warm table of 80 DEG C, the thin film AFM photo of preparation is as shown in Figure 2；
(5) the film surface vacuum evaporation organic photosensitive semiconductor layer Benzo[b of preparation in step (4), evaporation rate isVacuum degree control is 5 × 10-4Below pa, controlling evaporated film thickness is 50nm, and the porous semiconductor layer AFM photo of preparation is as shown in Figure 3；Film surface in preparation is patterned processing plus mask plate, and vacuum evaporation copper serves as source-drain electrode, evaporation rateControl thickness at 60～80nm；The channel width of mask plate is 2000 μm, and length is 100 μm, and the porous electrode AFM photo of preparation is as shown in Figure 4.
After prepared by device, its electric property is characterized by Agilent B1500 semiconductor analysis instrument, and data process the transfer curve being depicted as it is shown in figure 5, mobility reaches 0.1cm2/ Vs, on-off ratio reaches 104。
Fig. 6 is device storage characteristics transfer curve, it can be seen that the write window of device is very big, and only uses 5mW/cm2Visible ray just can wipe back initial position completely, embody device and there is good low-power consumption, high response characteristics to light.
The write of Fig. 7-reading-erasing (only using up)-this memorizer of reading performance data also surface has good repeatedly erasable ability, and after the erasable circulation of some cycles, the erasable window of device is substantially free of change.
Shown in Fig. 8 is device data holding capacity, and as can be seen from the figure after 1000s, the storage switch ratio of device remains in 103Above, illustrate that the memory reliability of device is high.
All test results show, the photosensitive memory device performance of the organic field effect tube with loose structure involved in the present invention is good, good stability, data keep reliability high, and preparation process is simple to operate, with low cost, main processes completes in the solution, saves the energy, and can large-scale production.
Embodiment 2
In the technical scheme of the present embodiment, heavily doped silicon is as substrate and gate electrode；The silicon dioxide of one layer of 50nm is as gate insulation layer；The polymer film layer with loose structure is made up of the polymer poly methyl methacrylate (PMMA) with loose structure, and its thickness is 70nm；It is deposited with Benzo[b thick for one layer of 30nm above gate insulation layer and serves as organic photosensitive semiconductor layer；Again at conducting channel both sides evaporation metal copper as source-drain electrode.
When prepared by reality, laboratory room temperature is maintained at about 25 DEG C, and indoor humidity is maintained at less than 50%.
The concrete preparation process of memorizer described in the present embodiment is as follows:
(1) configuration PMMA solution, solution concentration is 5mg/ml, and solvent is stand 24h without the oxolane (THF) processed that additionally dewaters so that it is be uniformly dispersed；
(2) surface is had the heavily doped silicon of 50nm silicon dioxide successively with acetone, ethanol, each ultrasonic cleaning 10min of deionized water, supersonic frequency is 100KHz, dry up to ensure that substrate surface is clean by substrate surface liquid with high pure nitrogen again, put into afterwards in the baking oven of 120 DEG C and dry；
(3) dried in step (2) substrate is placed and is processed 3min in UV ozone machine；
(4) in atmosphere, air humidity is 50%, the solution that the substrate surface spin-coating step (1) step (3) handled well has configured, spin coating rotating speed is slow-speed of revolution 500r/min, spin-coating time 6s, followed by 2000r/min, spin-coating time is 30s, and plastics thickness control is at about 70nm；In nitrogen glove box, the substrate that spin coating is good being placed on drying and annealing 30min on the warm table of 80 DEG C, the thin film AFM photo of preparation is as shown in Figure 2；
(5) the film surface vacuum evaporation organic photosensitive semiconductor layer Benzo[b of preparation in step (4), evaporation rate isVacuum degree control is 5 × 10-4Below pa, controlling evaporated film thickness is 30nm, and the porous semiconductor layer AFM photo of preparation is as shown in Figure 3；Film surface in preparation is patterned processing plus mask plate, and vacuum evaporation copper serves as source-drain electrode, evaporation rateControl thickness at 100nm；The channel width of mask plate is 2000 μm, and length is 100 μm, and the porous electrode AFM photo of preparation is as shown in Figure 4.
Embodiment 3
In the technical scheme of the present embodiment, heavily doped silicon is as substrate and gate electrode；The silicon dioxide of one layer of 50nm is as gate insulation layer；The polymer film layer with loose structure is made up of polymer polyethylene base carbazole (PVK) with loose structure, and its thickness is 25nm；It is deposited with titan bronze thick for one layer of 50nm above gate insulation layer and serves as organic photosensitive semiconductor layer；Again at conducting channel both sides evaporation metal copper as source-drain electrode.
When prepared by reality, laboratory room temperature is maintained at about 25 DEG C, and indoor humidity is maintained at 40%.
The concrete preparation process of memorizer described in the present embodiment is as follows:
(1) configuration Polyvinyl carbazole (PVK) solution, solution concentration is 5mg/ml, and solvent is without the chloroform (CHCl processed that additionally dewaters3) stand 24h so that it is it is uniformly dispersed；
(2) surface is had the heavily doped silicon of 50nm silicon dioxide successively with acetone, ethanol, each ultrasonic cleaning 10min of deionized water, supersonic frequency is 100KHz, dry up to ensure that substrate surface is clean by substrate surface liquid with high pure nitrogen again, put into afterwards in the baking oven of 120 DEG C and dry；
(3) dried in step (2) substrate is placed and is processed 3min in UV ozone machine；
(4) in atmosphere, air humidity is 40%, the solution that the substrate surface spin-coating step (1) step (3) handled well has configured, spin coating rotating speed is slow-speed of revolution 3000r/min, spin-coating time 30s, plastics thickness control is at about 25nm；In nitrogen glove box, the substrate that spin coating is good being placed on drying and annealing 30min on the warm table of 80 DEG C, the thin film AFM photo of preparation is as shown in Figure 2；
(5) the film surface vacuum evaporation organic photosensitive semiconductor layer Benzo[b of preparation in step (4), evaporation rate isVacuum degree control is 5 × 10-4Below pa, controlling evaporated film thickness is 50nm, and the porous semiconductor layer AFM photo of preparation is as shown in Figure 3；Film surface in preparation is patterned processing plus mask plate, and vacuum evaporation copper serves as source-drain electrode, evaporation rateControl thickness at 60～80nm；The channel width of mask plate is 2000 μm, and length is 100 μm, and the porous electrode AFM photo of preparation is as shown in Figure 4.
The thin polymer film with loose structure is incorporated in the middle of the photosensitive memorizer of organic field effect tube by the present invention, the problem effectively being solved organic photosensitive storage operation overtension by simple process means, promotes important in inhibiting for organic memory commercialization.
The concrete technical scheme being not limited to described in above-described embodiment of invention, all employings are equal to the technical scheme replacing formation and are the protection domain of application claims.
Claims (10)
1. the photosensitive memorizer of loose structure field effect transistors, include source-drain electrode, organic photosensitive quasiconductor, porous polymer film layer, gate insulation layer from top to bottom successively, it is characterized in that: be provided with the polymer film layer of loose structure, described source-drain electrode and organic photosensitive quasiconductor between described organic photosensitive quasiconductor and gate insulation layer and be all or part of the loose structure of cyclical growth.
2. the photosensitive memorizer of loose structure organic field effect tube according to claim 1, it is characterised in that: also include substrate and be formed at the gate electrode of this substrate.
3. the photosensitive memorizer of loose structure organic field effect tube according to claim 1 and 2, it is characterised in that: the polymer in the polymer film layer of described loose structure is selected from low-k polymer materials.
4. the photosensitive memorizer of loose structure organic field effect tube according to claim 3, it is characterised in that: described low dielectric constant polymer material is selected from Polyvinyl carbazole, polystyrene or polymethyl-benzene e pioic acid methyl ester；The thickness of the polymer film layer of described loose structure is 25～70nm.
5. the photosensitive memorizer of loose structure organic field effect tube according to claim 1 and 2, it is characterized in that: the material that described gate insulation layer adopts is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 50～300nm；The material that described organic photosensitive semiconductor layer adopts is selected from Benzo[b, aphthacene, titan bronze, titanium fluoride bronze, rubrene or anthracene, and the film thickness of described organic photosensitive semiconductor layer is 30～50nm；Described source-drain electrode materials is selected from metal or organic conductor material, and its thickness is 60～100nm.
6. the photosensitive memorizer of loose structure organic field effect tube according to claim 5, it is characterised in that: described organic photosensitive semiconductor layer adopts thermal vacuum evaporation film-forming method film forming；The preparation method of described source-drain electrode is magnetron sputtering method, ink-jet printing process or vacuum vapour deposition；Described source-drain electrode materials is copper or gold.
7. the photosensitive memorizer of loose structure organic field effect tube according to claim 2, it is characterised in that: described substrate is selected from highly doped silicon chip, sheet glass or plastics PET；The material that described gate electrode adopts is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum.
Preferably, the light-sensitive semiconductor material of step (5) described vacuum evaporation is Benzo[b, and evaporation rate isVacuum degree control is 6 × 10-5Pa～6 × 10-4Pa, adopts crystal oscillator to control thickness at 30～50nm；The described vacuum evaporation source-drain electrode of step (6) is copper, evaporation rateControl thickness at 60～100nm.
8. the preparation method of the photosensitive memorizer of loose structure organic field effect tube as described in any one of claim 1-7, it is characterised in that comprise the steps:
(1) configuration advanced low-k materials polymer solution, is dissolved in low boiling point solvent, its concentration 5～10mg/ml；
(2) selecting suitable backing material as substrate, and form gate electrode and gate insulation layer on substrate, the thickness of gate insulation layer thin film is 50～300nm, cleans up substrate post-drying；
(3) UV ozone is used to process 3～5min the clean substrate after drying；
(4) solution that spin-coating step (1) above the substrate of preparation in step (3) configure, thickness is 25～70nm, by sample good for spin coating in glove box 80 DEG C dry；
(5) vacuum evaporation semiconductor photoactive layer and source-drain electrode above the sample prepared in step (3).
9. the preparation method of the photosensitive memorizer of loose structure organic field effect tube according to claim 8, it is characterised in that: the low boiling point solvent in step (1) is chloroform or oxolane, and without the process that dewaters；Spin coating process in step (4) carries out in atmosphere, and air humidity controls 40～50%.
10. the preparation method of the photosensitive memorizer of loose structure organic field effect tube according to claim 8, it is characterised in that: the described vacuum evaporation organic photosensitive semi-conducting material of step (5) is Benzo[b, and evaporation rate isVacuum degree control is 6 × 10-5Pa～6 × 10-4Pa, adopts crystal oscillator to control thickness at 30～50nm；The source-drain electrode of step (5) described vacuum evaporation is copper or gold, evaporation rateControl thickness at 60～100nm.
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| CN106098942A (en) * | 2016-07-29 | 2016-11-09 | 南京邮电大学 | A kind of nano-pillar structure organic field effect tube memorizer and preparation method thereof |
| CN106531886A (en) * | 2016-09-29 | 2017-03-22 | 南京邮电大学 | Quantum dot-based organic field effect transistor photosensitive memory and preparation method thereof |
| CN106981573A (en) * | 2017-03-20 | 2017-07-25 | 南京邮电大学 | A kind of organic field effect tube memory from barrier layer structure and preparation method thereof |
| CN109326713A (en) * | 2018-08-21 | 2019-02-12 | 中通服咨询设计研究院有限公司 | A kind of multistage transistorized memory of organic effect and preparation method thereof based on light regulation |
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