CN105742254B - 晶片封装体及其制造方法 - Google Patents

晶片封装体及其制造方法 Download PDF

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Publication number
CN105742254B
CN105742254B CN201511016598.4A CN201511016598A CN105742254B CN 105742254 B CN105742254 B CN 105742254B CN 201511016598 A CN201511016598 A CN 201511016598A CN 105742254 B CN105742254 B CN 105742254B
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Prior art keywords
laser
perforation
encapsulation body
wafer
insulating layer
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CN201511016598.4A
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CN105742254A (zh
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温英男
刘建宏
李士仪
姚皓然
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XinTec Inc
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XinTec Inc
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Abstract

一种晶片封装体及其制造方法，该晶片封装体包含：一晶片，该晶片具有一导电垫、以及相对的一第一表面与一第二表面，其中导电垫位于第一表面上；一第一穿孔，自第二表面朝第一表面延伸，并暴露出导电垫；一激光阻挡结构，位于第一穿孔中的导电垫上，且激光阻挡结构的一上表面位于第二表面上；一第一绝缘层，位于第二表面与激光阻挡结构上，并具有相对于第二表面的一第三表面；一第二穿孔，自第三表面朝第二表面延伸，并暴露激光阻挡结构；以及一导电层，位于第三表面上与第二穿孔中，并接触激光阻挡结构。本发明不仅可省略化学气相沉积绝缘层与图案化绝缘层的制程，还能缩小穿孔的孔径，且可提升晶片封装体侦测时的准确度。

Description

晶片封装体及其制造方法
技术领域
本发明是有关一种晶片封装体及其制造方法。
背景技术
指纹感测装置(finger print sensor)或射频感测装置(RF sensor)需利用平坦的感测面来侦测信号。若感测面不平整，会影响感测装置侦测时的准确度。举例来说，当指头按压于指纹感测装置的感测面时，若感测面不平整，将难以侦测到完整的指纹。
此外，上述的感测装置在制作时，会先于晶圆中形成硅穿孔(Through SiliconVia；TSV)，使焊垫从硅穿孔裸露。接着，会以化学气相沉积法(Chemical VaporDeposition；CVD)在焊垫上与硅穿孔的壁面上形成绝缘层。之后，还需通过图案化制程于焊垫上的绝缘层形成开口。一般而言图案化制程包含曝光、显影与蚀刻制程。在后续制程中，重布线层便可形成在绝缘层上并电性连接绝缘层开口中的焊垫。
然而，化学气相沉积与图案化制程均需耗费大量的制程时间与机台的成本。
发明内容
本发明的一态样提供一种晶片封装体，包含：一晶片，具有一导电垫、以及相对的一第一表面与一第二表面，其中导电垫位于第一表面；一第一穿孔，自第二表面朝第一表面延伸，并暴露出导电垫；一激光阻挡结构，位于第一穿孔中的导电垫上，且激光阻挡结构的一上表面位于第二表面上；一第一绝缘层，位于第二表面与激光阻挡结构上，并具有相对于第二表面的一第三表面；一第二穿孔，自第三表面朝第二表面延伸，并暴露激光阻挡结构；以及一导电层，位于第三表面上与第二穿孔中，并接触激光阻挡结构。
根据本发明部分实施方式，还包含一保护层，位于第三表面上与导电层上，并具有一开口暴露出导电层，而一外部导电连结位于此开口中并接触导电层。
根据本发明部分实施方式，第二穿孔的孔径小于第一穿孔的孔径。
根据本发明部分实施方式，第二穿孔只暴露出激光阻挡结构。
根据本发明部分实施方式，激光阻挡结构为一实心结构或一空心结构。
根据本发明部分实施方式，第二穿孔的一孔壁为一粗糙面。
根据本发明部分实施方式，激光阻挡结构的材质为铜。
根据本发明部分实施方式，第一绝缘层的材质包含环氧树脂。
根据本发明部分实施方式，导电层在第一绝缘层的第三表面上的厚度大于导电层在第二穿孔的孔壁上的厚度。
根据本发明部分实施方式，导电层在第二穿孔的孔壁上的厚度大于导电层在激光阻档结构上的厚度。
本发明的另一态样提供一种晶片封装体的制造方法，包含下述步骤。先提供暂时接合的一晶圆与一支撑件，其中晶圆包含：一第一表面以及相对于第一表面的一第二表面；一导电垫，位于第一表面上，其中支撑件覆盖第一表面与导电垫；以及一激光阻挡结构，位于晶圆中，并位于导电垫上。接着研磨晶圆令使第二表面低于激光阻挡结构的一上表面，再形成一第一绝缘层于第二表面上并覆盖激光阻挡结构的上表面，其中第一绝缘层具有相对第二表面的一第三表面。然后使用一激光移除部分第一绝缘层以形成一第二穿孔，其中激光停止于激光阻挡结构。最后形成一导电层于第三表面上与第二穿孔中的激光阻挡结构上。
根据本发明部分实施方式，还包含形成一保护层于第一绝缘层的第三表面与导电层上，接着图案化保护层以形成一开口，该开口暴露导电层。
根据本发明部分实施方式，还包含形成一外部导电连结于开口中并接触导电层。
根据本发明部分实施方式，还包含移除支撑件，接着沿着一切割道切割晶圆、第一绝缘层与保护层，以形成一晶片封装体。
根据本发明部分实施方式，使用激光移除第一绝缘层时，激光对准激光阻挡结构。
根据本发明部分实施方式，提供晶圆包含下述步骤。形成一第一穿孔自第二表面朝第一表面延伸，以暴露导电垫。接着形成激光阻挡结构于第一穿孔中的导电垫上。
根据本发明部分实施方式，以电镀形成激光阻挡结构于第一穿孔中。
根据本发明部分实施方式，以印刷、涂布形成第一绝缘层于第二表面上。
根据本发明部分实施方式，形成第一绝缘层于第二表面上还包含涂布、压印、制模或研磨第一绝缘层的第三表面。
本发明不仅可省略化学气相沉积绝缘层与图案化绝缘层的制程，还能缩小穿孔的孔径，且可提升晶片封装体侦测时的准确度。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附图式的详细说明如下。
图1绘示根据本发明部分实施方式的一种晶片封装体的俯视图；
图2绘示根据本发明部分实施方式中，图1的晶片封装体沿线段A-A的剖面图；
图3绘示根据本发明部分实施方式中，图2的晶片封装体的局部放大图；
图4绘示根据本发明其他部分实施方式中，图1的晶片封装体沿线段A-A的剖面图；
图5绘示根据本发明部分实施方式中，图4的晶片封装体的局部放大图；
图6绘示根据本发明部分实施方式中晶片封装体的制造方法流程图；
图7A-7G绘示本发明部分实施方式中，图2的晶片封装体在制程各个阶段的剖面图；以及
图8A-8I绘示本发明部分实施方式中，图4的晶片封装体在制程各个阶段的剖面图。
其中，附图中符号的简单说明如下：
100：晶片封装体 400：晶片封装体
110：晶片 410：晶片
112：第一表面 412：第一表面
114：第二表面 414：第二表面
116：导电垫 416：导电垫
117：第二绝缘层 417：第二绝缘层
118：第一穿孔 424：空穴
120：激光阻挡结构 430：第一绝缘层
122：上表面 432：第三表面
130：第一绝缘层 434：第二穿孔
132：第三表面 435：孔壁
134：第二穿孔 436：底部
135：孔壁 440：导电层
136：底部 450：保护层
140：导电层 452：开口
150：保护层 460：外部导电连结
152：开口 610～670：步骤
160：外部导电连结 700：晶圆
D1、D2：孔径 710：支撑件
T1、T2、T3：厚度 720：切割道
418：第一穿孔 800：晶圆
420：激光阻挡结构 810：支撑件
422：上表面 820：切割道。
具体实施方式
以下将以图式揭露本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化图式起见，一些已知惯用的结构与元件在图式中将以简单示意的方式绘示。
请先参阅图1，图1绘示根据本发明部分实施方式的一种晶片封装体的俯视图，而图2绘示图1的晶片封装体沿线段A-A的剖面图。请同时参阅图1与图2，晶片封装体100包含一晶片110、一激光阻挡结构120、一第一绝缘层130、一导电层140、一保护层150与一外部导电连结160。晶片110为一感测晶片，具有相对的一第一表面112与一第二表面114，其中第一表面112作为感测面，且一导电垫116位于晶片110的第一表面114上。在本发明的部分实施例中，晶片110的材质为硅(silicon)、锗(Germanium)或III-V族元素，但不以此为限。晶片的第二表面114具有一第一穿孔118自第二表面114朝第一表面112延伸，并暴露导电垫116。一激光阻挡结构120位于此第一穿孔118中的导电垫116上，且激光阻挡结构120的一上表面122位于第二表面114上。在本发明的部分实施例中，激光阻挡结构120为实心结构，代表激光阻挡结构120完全填满第一穿孔118。在本发明的部分实施例中，一第二绝缘层117位于第一穿孔118中，并环绕激光阻挡结构120。其中，第二绝缘层117所使用的材料为氧化硅、氮化硅、氮氧化硅或其它合适的绝缘材料。
请继续参阅图1与图2，第一绝缘层130位于第二表面114与激光阻挡结构120上。其中，第一绝缘层130的材质为环氧树脂(epoxy)。第一绝缘层130还具有相对于第二表面114的一第三表面132，一第二穿孔134自第三表面132朝第二表面114延伸，并暴露出激光阻挡结构120。其中此第二穿孔134为一激光穿孔，更详细的说，使用一激光来贯穿第一绝缘层130以形成第二穿孔134，而激光阻挡结构120作为激光的终点。通过激光的使用，第二穿孔134的孔径D2可小于第一穿孔118的孔径D1，对于微小化设计有所助益。在本发明的部分实施例中，第二穿孔134中只暴露出激光阻挡结构120。在本发明的其他部分实施例中，激光阻挡结构120的材质选用能阻挡激光的导电材料，例如铜。
请继续参阅图1与图2，一导电层140位于第一绝缘层130的第三表面132上，且部分的导电层140位于第二穿孔134中，并接触暴露于第二穿孔134中的激光阻挡结构120。一保护层150位于第一绝缘层130的第三表面132与导电层140上，且保护层150具有一开口152暴露出导电层140。此外，外部导电连结160设置于开口152中，并接触导电层140。外部导电连结160通过导电层140，激光阻挡结构120电性连接至导电垫116。
在本发明的其他部分实施例中，外部导电连结160为焊球、凸块等业界熟知的结构，且形状可以为圆形、椭圆形、方形、长方形，并不用以限制本发明。在本发明的其他部分实施例中，导电层140的材质选用导电材料，例如铜。
在本发明的其他部分实施例中，晶片封装体100可以为指纹感测装置(fingerprint sensor)或射频感测装置(RF sensor)，但并不用以限制本发明。
图3绘示图2的晶片封装体100的局部放大图。如图2所示，在使用激光形成第二穿孔134时，激光阻挡结构120作为激光的终点。虽有部分的激光阻挡结构120被移除，但激光无法贯穿激光阻挡结构120。由于以激光形成第二穿孔134，第二穿孔134的孔壁135与底部136均为一粗糙面，且激光阻挡结构120暴露于第二穿孔134的底部136。
在第二穿孔134形成后，接着形成导电层140于第一绝缘层130的第三表面132、第二穿孔134的孔壁135与底部136上，使得导电层140电性连接至激光阻挡结构120。由于导电层140以电镀形成，其在第一绝缘层130的第三表面132上的厚度T1大于导电层140在第二穿孔134的孔壁135上的厚度T2，且导电层140在第二穿孔134的孔壁135上的厚度T2大于导电层140在第二穿孔134的底部136上的厚度T3。
请继续参阅图4，图4为本发明其他部分实施方式中，图1的晶片封装体沿线段A-A的剖面图。此处需注意的是相同元件的材质并不再做详述。
如图4所示，晶片封装体400包含一晶片410、一激光阻挡结构420、一第一绝缘层430、一导电层440、一保护层450与一外部导电连结460。晶片410为一感测晶片，具有相对的一第一表面412与一第二表面414，其中第一表面412作为感测面，且一导电垫416位于晶片410的第一表面412上。晶片的第二表面414具有一第一穿孔418自第二表面414朝第一表面412延伸，并暴露导电垫416。激光阻挡结构420位于此第一穿孔418中，且激光阻挡结构420的一上表面422位于第二表面414上。在本发明的部分实施例中，一第二绝缘层417位于第一穿孔418中，并环绕激光阻挡结构420。其中，第二绝缘层417所使用的材料为氧化硅、氮化硅、氮氧化硅或其它合适的绝缘材料。在本发明的其他部分实施例中，激光阻挡结构420为空心结构，意指激光阻挡结构420并未完全填满第一穿孔418，而有一空穴424于激光阻挡结构420中。
请继续参阅图4，第一绝缘层430位于第二表面414与激光阻挡结构420上。第一绝缘层430还具有相对于第二表面414的一第三表面432，一第二穿孔434自第三表面432朝第二表面414延伸，并暴露出激光阻挡结构420。其中此第二穿孔434为一激光穿孔，更详细的说，使用一激光来贯穿第一绝缘层430以形成第二穿孔434，而激光阻挡结构420作为激光的终点。通过激光的使用，第二穿孔434的孔径D2可小于第一穿孔418的孔径D1，对于微小化设计有所助益。在本发明的部分实施例中，第二穿孔434中只暴露出激光阻挡结构420。
请继续参阅图4，一导电层440位于第一绝缘层430的第三表面432上，且部分的导电层440位于第二穿孔434中，并接触暴露于第二穿孔434中的激光阻挡结构420。保护层450位于第一绝缘层430的第三表面432与导电层440上，且保护层450具有一开口452暴露出导电层440。此外，外部导电连结460位于开口452中，并接触导电层440，外部导电连结460通过导电层440，激光阻挡结构420电性连接至导电垫416。
在本发明的其他部分实施例中，晶片封装体400可以为指纹感测装置(fingerprint sensor)或射频感测装置(RF sensor)，但并不用以限制本发明。
图5绘示图4的晶片封装体400的局部放大图。如图5所示，在使用激光形成第二穿孔434时，激光阻挡结构420作为激光的终点。虽有部分的激光阻挡结构420被移除，但激光并无法贯穿激光阻挡结构420。由于以激光形成第二穿孔434，第二穿孔434的孔壁435与底部436均为一粗糙面，且激光阻挡结构420暴露于第二穿孔434的底部436。
在第二穿孔434形成后，接着形成导电层440于第一绝缘层430的第三表面432、第二穿孔434的孔壁435与底部436上，使得导电层440电性连接至激光阻挡结构420。由于导电层440以电镀形成，其在第一绝缘层430的第三表面432上的厚度T1大于导电层440在第二穿孔434的孔壁435上的厚度T2，且导电层440在第二穿孔434的孔壁435上的厚度T2大于导电层440在第二穿孔434的底部436上的厚度T3。
请接着参阅图6，图6绘示根据本发明部分实施方式的晶片封装体的制造方法流程图。请同时参阅图7A-7G以进一步理解晶片封装体的制造方法，图7A-7G绘示图2的晶片封装体在制程各个阶段的剖面图。
请先参阅步骤610与图7A，提供暂时接合的一晶圆700与一支撑件710，其中晶圆700包含一导电垫116、以及相对的一第一表面112与一第二表面114，导电垫116位于第一表面112上，而支撑件710覆盖第一表面112与导电垫116。此外，一激光阻挡结构120位于晶圆700中的导电垫116上。晶圆700意指切割后可形成多个图2的晶片110的半导体基板，而支撑件710可提供晶圆700支撑力，防止晶圆700在后续制程中因受力而破裂。在本实施例中，直接使用内部已具有激光阻挡结构120的晶圆700，而第二绝缘层117环绕着激光阻挡结构120。在此需说明的是，虽第7A图绘示的激光阻挡结构120为一实心结构，但并不以此为限，激光阻挡结构120亦可为一空心结构。
请继续参阅步骤620与图7B，研磨晶圆700令使第二表面114低于激光阻挡结构120的一上表面122。对晶圆700的第二表面114进行研磨以减少晶圆700的厚度，而硬度较高的激光阻挡结构120在研磨的过程中会逐渐凸出第二表面114，使激光阻挡结构120的上表面122暴露出来。
请继续参阅步骤630与图7C，形成一第一绝缘层130于第二表面114上并覆盖激光阻挡结构120的上表面122，其中第一绝缘层130具有相对第二表面114的一第三表面132。在此步骤中，印刷、涂布环氧树脂于晶圆700的第二表面114上，并覆盖凸出第二表面114的激光阻挡结构120，以形成第一绝缘层130。在本发明的部分实施例中，在形成第一绝缘层130后，可依制程需求涂布、压印、制模或研磨第一绝缘层130的第三表面132，以减少第一绝缘层130的厚度。
请继续参阅步骤640与图7D，使用一激光移除部分的第一绝缘层130以形成一第二穿孔134，其中激光停止于激光阻挡结构120，并暴露激光阻挡结构120。在此步骤中，激光对准激光阻挡结构120的上表面122发射，并贯穿上表面122上方的第一绝缘层130。而激光阻挡结构120作为激光的终点，使激光阻挡结构120的上表面122于第二穿孔134中暴露出来。在本发明的部分实施例中，第二穿孔134只暴露出激光阻挡结构120的上表面122。
请继续参阅步骤650与图7E，形成一导电层140于第三表面132与第二穿孔134中的激光阻挡结构120上。待第二穿孔134形成于第一绝缘层130中后，可化镀加电镀导电材料于第一绝缘层130的第三表面132、第二穿孔134的孔壁与第二穿孔133中的激光阻挡结构120上，以形成导电层140。
请继续参阅步骤660与图7F，形成一保护层150于第一绝缘层130的第三表面132与导电层140上，并图案化保护层150以形成一开口152，开口152暴露导电层140。接着再形成一外部导电连结160于此开口152中。可通过刷涂绝缘材料于第一绝缘层130的第三表面132与导电层140上，以形成保护层150。其中，绝缘材料可为环氧树脂。接着，再图案化保护层150以形成开口152，使部分的导电层140从保护层150的开口152暴露出来后，再形成外部导电连结160于此开口152中。外部导电连结160可通过导电层140与激光阻挡结构120与导电垫116电性连接。
在本发明的部分实施例中，可在形成保护层150后，即移除晶圆700的第一表面112上的支撑件710。在本发明的其他部分实施例中，可在形成外部导电连结160后，再移除晶圆700的第一表面112上的支撑件710。
最后请参阅步骤670与图7G，沿着一切割道720切割晶圆700、第一绝缘层130与保护层150，以形成一晶片封装体。沿着切割道720将晶圆700分割，以分离晶圆700上的数个晶片，形成如图2所示的晶片封装体100。
请继续参阅图8A-8I以进一步理解本发明其他部分实施方式的晶片封装体制造方法，图8A-8I绘示图4的晶片封装体在制程各个阶段的剖面图。
请先参阅图8A，提供暂时接合的一晶圆800与一支撑件810，其中晶圆800包含一导电垫416、以及相对的一第一表面412与一第二表面414，导电垫416位于第一表面412上，而支撑件810覆盖第一表面412与导电垫416。晶圆800意指切割后可形成多个图4的晶片410的半导体基板，而支撑件810可提供晶圆800支撑力，防止晶圆800在后续制程中因受力而破裂。在本实施例中，使用的晶圆800内部并不具有激光阻挡结构，需再于后续步骤中形成激光阻挡结构于晶圆800中。
请继续参阅图8B，形成一第一穿孔418自第二表面414朝该第一表面412延伸，并暴露导电垫416。形成第一穿孔418的方式例如可以是以微影蚀刻，但不以此为限。在本发明的其他部分实施例中，会再沉积绝缘材料覆盖第一穿孔418的孔壁与底部。接着再使用微影蚀刻的方式移除第一穿孔418底部的绝缘材料，以形成第二绝缘层417，使导电垫416在第一穿孔418中暴露。
请继续参阅图8C，形成一激光阻挡结构420于第一穿孔418中的导电垫416上。在此步骤中，可利用例如是溅镀(sputtering)、蒸镀(evaporating)、电镀(electroplating)或无电镀(electroless plating)的方式沉积导电材料来形成激光阻挡结构420。在本实施例中，激光阻挡结构420并未完全填满第一穿孔418，而有一空穴424位于激光阻挡结构420中。在此需说明的是，虽图8C绘示的激光阻挡结构420为一空心结构，但并不以此为限，激光阻挡结构420亦可为一实心结构。在本发明的部分实施例中，激光阻挡结构422的上表面422可低于晶圆800的第二表面414，或如图8C所示与第二表面414齐平。
请继续参阅图8D，研磨晶圆800的第二表面414令使第二表面414低于激光阻挡结构420的上表面422。对晶圆800的第二表面414进行研磨以减少晶圆800的厚度，而硬度较高的激光阻挡结构420在研磨的过程中会逐渐凸出第二表面414，使激光阻挡结构420的上表面422暴露出来。在研磨晶圆800的第二表面414的同时也会移除部分的第二绝缘层417。
请继续参阅图8E，形成一第一绝缘层430于第二表面414上并覆盖激光阻挡结构420的上表面422，其中第一绝缘层430具有相对第二表面414的一第三表面432。在此步骤中，印刷、涂布环氧树脂于晶圆800的第二表面414，并覆盖凸出第二表面414的激光阻挡结构420，以形成第一绝缘层430。在本发明的部分实施例中，在形成第一绝缘层430后，可依制程需求涂布、压印、制模或研磨第一绝缘层430的第三表面432，以减少第一绝缘层430的厚度。
请继续参阅图8F，使用一激光移除部分的第一绝缘层430以形成一第二穿孔434，其中激光停止于激光阻挡结构420，并暴露激光阻挡结构420。在此步骤中，激光对准激光阻挡结构420的上表面422发射，并贯穿上表面422上方的第一绝缘层430。而激光阻挡结构420作为激光的终点，使激光阻挡结构420的上表面422于第二穿孔434中暴露出来。在本发明的部分实施例中，第二穿孔434只暴露出激光阻挡结构420的上表面422。
请继续参阅图8G，形成一导电层440于第三表面432上与第二穿孔434中的激光阻挡结构420上。待第二穿孔434形成于第一绝缘层430中后，可化镀加电镀导电材料于第一绝缘层430的第三表面432、第二穿孔434的孔壁与第二穿孔434中的激光阻挡结构420上，以形成导电层440。
请继续参阅图8H，形成一保护层450于第一绝缘层430的第三表面432与导电层440上，并图案化保护层450以形成一开口452，开口452暴露导电层440。接着再形成一外部导电连结460于此开口452中。可通过刷涂绝缘材料于第一绝缘层430的第三表面432与导电层440上，以形成保护层450。其中，绝缘材料可为环氧树脂。接着，再图案化保护层450以形成开口452，使部分的导电层440从保护层450的开口452暴露出来后，再形成外部导电连结460于此开口452中。外部导电连结460可通过导电层440与激光阻挡结构420与导电垫416电性连接。
在本发明的部分实施例中，可在形成保护层450后，即移除晶圆800的第一表面412上的支撑件810。在本发明的其他部分实施例中，可在形成外部导电连结460后，再移除晶圆800的第一表面412上的支撑件810。
最后请参阅图8I，沿着一切割道820切割晶圆800、第一绝缘层430与保护层450，以形成一晶片封装体。沿着切割道820将晶圆800分割，以分离晶圆800上的数个晶片，形成如图4所示的晶片封装体400。
由上述本发明实施例可知，本发明具有下列优点。本发明的晶片封装体与其制备方法可省略已知化学气相沉积绝缘层与图案化绝缘层的制程。此外，使用激光还能缩小穿孔的孔径，对于微小化设计有所助益，进而节省制程的时间与机台的成本。且晶片的第一表面未经额外的加工，因此平坦性佳，可提升晶片封装体侦测时的准确度。
以上所述仅为本发明较佳实施例，然其并非用以限定本发明的范围，任何熟悉本项技术的人员，在不脱离本发明的精神和范围内，可在此基础上做进一步的改进和变化，因此本发明的保护范围当以本申请的权利要求书所界定的范围为准。

Claims (19)

1.一种晶片封装体，其特征在于，包含：
一晶片，包含一导电垫，以及相对的一第一表面与一第二表面，其中该导电垫位于该第一表面上；
一第一穿孔，自该第二表面朝该第一表面延伸，并暴露出该导电垫；
一激光阻挡结构，位于该第一穿孔中的该导电垫上，其中该激光阻挡结构的一上表面位于该第二表面上；
一第一绝缘层，位于该第二表面与该激光阻挡结构上，该第一绝缘层具有相对于该第二表面的一第三表面；
一第二穿孔，自该第三表面朝该第二表面延伸，并暴露该激光阻挡结构；以及
一导电层，位于该第三表面上与该第二穿孔中，并接触该激光阻挡结构。
2.根据权利要求1所述的晶片封装体，其特征在于，还包含：
一保护层，位于该第三表面与该导电层上，该保护层具有一开口暴露出该导电层；以及
一外部导电连结，位于该开口中并接触该导电层。
3.根据权利要求1所述的晶片封装体，其特征在于，该第二穿孔的孔径小于该第一穿孔的孔径。
4.根据权利要求1所述的晶片封装体，其特征在于，该第二穿孔只暴露出该激光阻挡结构。
5.根据权利要求1所述的晶片封装体，其特征在于，该激光阻挡结构为一实心结构或一空心结构。
6.根据权利要求1所述的晶片封装体，其特征在于，该第二穿孔的一孔壁与一底部为一粗糙面。
7.根据权利要求1所述的晶片封装体，其特征在于，该激光阻挡结构的材质为铜。
8.根据权利要求1所述的晶片封装体，其特征在于，该第一绝缘层的材质包含环氧树脂。
9.根据权利要求1所述的晶片封装体，其特征在于，该导电层在该第一绝缘层的该第三表面上的厚度大于该导电层在该第二穿孔的一孔壁上的厚度。
10.根据权利要求1所述的晶片封装体，其特征在于，该导电层在该第二穿孔的一孔壁上的厚度大于该导电层在该激光阻挡结构上的厚度。
11.一种晶片封装体的制造方法，其特征在于，包含：
提供暂时接合的一晶圆与一支撑件，该晶圆包含：
一第一表面以及相对于该第一表面的一第二表面；
一导电垫，位于该第一表面上，其中该支撑件覆盖该第一表面与该导电垫；以及
一激光阻挡结构，位于该晶圆中的该导电垫上；
研磨该晶圆令使该第二表面低于该激光阻挡结构的一上表面；
形成一第一绝缘层于该第二表面上并覆盖该激光阻挡结构的该上表面，其中该第一绝缘层具有相对该第二表面的一第三表面；
使用一激光移除部分该第一绝缘层以形成一第二穿孔，其中该激光停止于该激光阻挡结构；以及
形成一导电层于该第三表面上与该第二穿孔中的该激光阻挡结构上。
12.根据权利要求11所述的晶片封装体的制造方法，其特征在于，还包含：
形成一保护层于该第一绝缘层的该第三表面与该导电层上；以及
图案化该保护层以形成一开口，该开口暴露该导电层。
13.根据权利要求12所述的晶片封装体的制造方法，其特征在于，还包含形成一外部导电连结于该开口中并接触该导电层。
14.根据权利要求13所述的晶片封装体的制造方法，其特征在于，还包含：
移除该支撑件；以及
沿着一切割道切割该晶圆、该第一绝缘层与该保护层，以形成一晶片封装体。
15.根据权利要求11所述的晶片封装体的制造方法，其特征在于，使用该激光移除该第一绝缘层时，该激光对准该激光阻挡结构。
16.根据权利要求11所述的晶片封装体的制造方法，其特征在于，提供该晶圆包含：
形成一第一穿孔自该第二表面朝该第一表面延伸，以暴露该导电垫；以及
形成该激光阻挡结构于该第一穿孔中的该导电垫上。
17.根据权利要求16所述的晶片封装体的制造方法，其特征在于，以电镀形成该激光阻挡结构于该第一穿孔中。
18.根据权利要求11所述的晶片封装体的制造方法，其特征在于，以印刷、涂布形成该第一绝缘层于该第二表面上。
19.根据权利要求11所述的晶片封装体的制造方法，其特征在于，形成该第一绝缘层于该第二表面上还包含：
涂布、压印、制模或研磨该第一绝缘层的该第三表面。
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