CN105702597A - 多工作台或多腔体检测*** - Google Patents
多工作台或多腔体检测*** Download PDFInfo
- Publication number
- CN105702597A CN105702597A CN201610082232.5A CN201610082232A CN105702597A CN 105702597 A CN105702597 A CN 105702597A CN 201610082232 A CN201610082232 A CN 201610082232A CN 105702597 A CN105702597 A CN 105702597A
- Authority
- CN
- China
- Prior art keywords
- measuring station
- detection
- workbench
- sample
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims description 47
- 238000012360 testing method Methods 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000007689 inspection Methods 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 34
- 230000006870 function Effects 0.000 description 17
- 230000007547 defect Effects 0.000 description 13
- 208000002925 dental caries Diseases 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007726 management method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012384 transportation and delivery Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000013439 planning Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims (20)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610082232.5A CN105702597B (zh) | 2016-02-05 | 2016-02-05 | 多工作台或多腔体检测*** |
PCT/CN2016/079416 WO2017133082A1 (en) | 2016-02-05 | 2016-04-15 | Multi-stage / multi-chamber electron-beam inspection system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610082232.5A CN105702597B (zh) | 2016-02-05 | 2016-02-05 | 多工作台或多腔体检测*** |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105702597A true CN105702597A (zh) | 2016-06-22 |
CN105702597B CN105702597B (zh) | 2019-03-19 |
Family
ID=56222026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610082232.5A Active CN105702597B (zh) | 2016-02-05 | 2016-02-05 | 多工作台或多腔体检测*** |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105702597B (zh) |
WO (1) | WO2017133082A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017133081A1 (en) * | 2016-02-05 | 2017-08-10 | Dongfang Jingyuan Electron Limited | Multi-stage/multi-chamber electron-beam inspection system |
WO2024036552A1 (en) * | 2022-08-18 | 2024-02-22 | Applied Materials, Inc. | Method for defect review measurement on a substrate, apparatus for imaging a substrate, and method of operating thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6208751B1 (en) * | 1998-03-24 | 2001-03-27 | Applied Materials, Inc. | Cluster tool |
US20030015674A1 (en) * | 2001-07-17 | 2003-01-23 | Oliver Broermann | Measuring configuration and method for measuring a critical dimension of at least one feature on a semiconductor wafer |
CN103646886A (zh) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | 监控多腔体设备缺陷状况的晶圆作业方法 |
CN103646891A (zh) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | 晶圆派工方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4157037B2 (ja) * | 2001-09-21 | 2008-09-24 | オリンパス株式会社 | 欠陥検査装置 |
KR100846065B1 (ko) * | 2006-12-29 | 2008-07-11 | 주식회사 실트론 | 웨이퍼 검사장치 및 방법 |
JP5460023B2 (ja) * | 2008-10-16 | 2014-04-02 | 株式会社トプコン | ウェハのパターン検査方法及び装置 |
CN101705477B (zh) * | 2009-12-09 | 2012-08-22 | 新奥光伏能源有限公司 | 一种在线检测与在线修补薄膜产品晶化率的***及方法 |
CN204905217U (zh) * | 2015-08-31 | 2015-12-23 | 苏州大学 | 太阳能级多晶硅片质量自动分类装置 |
-
2016
- 2016-02-05 CN CN201610082232.5A patent/CN105702597B/zh active Active
- 2016-04-15 WO PCT/CN2016/079416 patent/WO2017133082A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6208751B1 (en) * | 1998-03-24 | 2001-03-27 | Applied Materials, Inc. | Cluster tool |
US20030015674A1 (en) * | 2001-07-17 | 2003-01-23 | Oliver Broermann | Measuring configuration and method for measuring a critical dimension of at least one feature on a semiconductor wafer |
CN103646886A (zh) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | 监控多腔体设备缺陷状况的晶圆作业方法 |
CN103646891A (zh) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | 晶圆派工方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017133081A1 (en) * | 2016-02-05 | 2017-08-10 | Dongfang Jingyuan Electron Limited | Multi-stage/multi-chamber electron-beam inspection system |
WO2024036552A1 (en) * | 2022-08-18 | 2024-02-22 | Applied Materials, Inc. | Method for defect review measurement on a substrate, apparatus for imaging a substrate, and method of operating thereof |
Also Published As
Publication number | Publication date |
---|---|
CN105702597B (zh) | 2019-03-19 |
WO2017133082A1 (en) | 2017-08-10 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Multi-workbench or multi-chamber detection system Effective date of registration: 20200108 Granted publication date: 20190319 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: DONGFANG JINGYUAN ELECTRON Ltd. Registration number: Y2019990000822 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20210126 Granted publication date: 20190319 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: DONGFANG JINGYUAN ELECTRON Ltd. Registration number: Y2019990000822 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Multi stage or multi cavity detection system Effective date of registration: 20210126 Granted publication date: 20190319 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: DONGFANG JINGYUAN ELECTRON Ltd. Registration number: Y2021990000108 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220419 Granted publication date: 20190319 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: DONGFANG JINGYUAN ELECTRON Ltd. Registration number: Y2021990000108 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Multi bench or multi cavity detection system Effective date of registration: 20220419 Granted publication date: 20190319 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: DONGFANG JINGYUAN ELECTRON Ltd. Registration number: Y2022990000213 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230529 Granted publication date: 20190319 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: DONGFANG JINGYUAN ELECTRON Ltd. Registration number: Y2022990000213 |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 100176 building 12, yard 156, Jinghai 4th Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee after: Dongfang Jingyuan Microelectronics Technology (Beijing) Co.,Ltd. Address before: Building 12, No. 156 Jinghai Fourth Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing, 100176 Patentee before: DONGFANG JINGYUAN ELECTRON Ltd. |