CN105637645A - 薄膜晶体管装置、显示器及其制造方法 - Google Patents
薄膜晶体管装置、显示器及其制造方法 Download PDFInfo
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- CN105637645A CN105637645A CN201580001765.XA CN201580001765A CN105637645A CN 105637645 A CN105637645 A CN 105637645A CN 201580001765 A CN201580001765 A CN 201580001765A CN 105637645 A CN105637645 A CN 105637645A
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
Description
Claims (26)
- 一种薄膜晶体管装置,其特征在于,包括:包括栅极及连接垫的第一导电层;覆盖该栅极的第一介电层,该连接垫从该第一介电层暴露;设置在该第一介电层上且与该栅极重叠的半导体层;设置在该半导体层及该第一介电层上以暴露该半导体层的第一部分及第二部分及该连接垫的第二介电层;第二导电层,包括:覆盖该半导体层的该第一部分的源极部;延伸至该源极部的像素电极部;覆盖该半导体层的该第二部分的漏极部;及设置在该连接垫上并延伸至该漏极部的互连部。
- 如权利要求1所述的薄膜晶体管装置,其特征在于,该第一导电层还包括:耦合至该栅极并沿第一方向延伸的栅极线;通过该第二导电层耦合至该连接垫的数据线,该数据线沿不同于该第一方向的第二方向延伸。
- 如权利要求1所述的薄膜晶体管装置,其特征在于,该第二导电层包括透明导体。
- 如权利要求3所述的薄膜晶体管装置,其特征在于,该透明导体包括至少一种金属氧化物。
- 如权利要求4所述的薄膜晶体管装置,其特征在于,该至少一种金属氧化物包括In、Zn、Sn、Ga、Al、As、Cd、Hg、Tl、Pb、Ag、Au、Ge、Sb、Bi、Hf或Zr的氧化物,或其中的组合中的一种氧化物。
- 如权利要求3所述的薄膜晶体管装置,其特征在于,该第二导电层还包括一种金属。
- 如权利要求1所述的薄膜晶体管装置,其特征在于,还包括设置在该第二导电层上 的第三导电层,该第三导电层与该第二导电层对准。
- 如权利要求7所述的薄膜晶体管装置,其特征在于,该第三导电层与该第二导电层一一对应地对准。
- 如权利要求8所述的薄膜晶体管装置,其特征在于,该第二导电层包括反射材料,及该第三导电层包括透明材料。
- 如权利要求7所述的薄膜晶体管装置,其特征在于,该第三导电层至少与该第二导电层的该源极部及该像素电极部对准。
- 如权利要求10所述的薄膜晶体管装置,其特征在于,该第二导电层包括反射材料,及该第三导电层包括透明材料。
- 如权利要求1所述的薄膜晶体管装置,其特征在于,该第一导电层还包括电容的第一电极;及该第二导电层还包括该电容的第二电极,该第二电极与该第一电极相背,该第二电极及该第一电极夹着该第一介电层和该第二介电层中的至少一个。
- 如权利要求1所述的薄膜晶体管装置,其特征在于,该半导体层包括选自非晶硅、多晶硅及In、Zn、Sn、Ga、Al、As、Cd、Hg、Tl、Pb、Ag、Au、Ge、Sb、Bi、Hf或Zr,或其中的组合的氧化物中的一种材料。
- 一种薄膜晶体管装置的制造方法,其特征在于,包括:在基底上沉积第一导电层;利用第一光罩图案化该第一导电层以形成栅极及连接垫;在该基底上方沉积第一介电层以覆盖该栅极及该连接垫;在该第一介电层上沉积半导体层;利用第二光罩图案化该半导体层以形成与该栅极重叠的半导体区域;在该基底上沉积第二介电层;利用第三光罩图案化该第二介电层以暴露该半导体区域的第一部分及第二部分及在该 半导体区域上形成介电区域,利用该第三光罩图案化该第二介电层及该第一介电层以暴露该连接垫;在该基底上形成第二导电层使得该第二导电层与该连接垫接触;及利用第四光罩图案化该第二导电层。
- 如权利要求14所述的薄膜晶体管装置的制造方法,其特征在于,还包括:利用该第一光罩图案化该第一导电层以形成连接该栅极并沿第一方向延伸的栅极线,及沿不同于该第一方向的第二方向延伸的数据线的第一部分;及利用该第四光罩图案化该第二导电层以形成该数据线的第二部分,该第二部分通过该连接垫连接该第一部分。
- 如权利要求15所述的薄膜晶体管装置的制造方法,其特征在于,该第二导电层包括透明导体。
- 如权利要求16所述的薄膜晶体管装置的制造方法,其特征在于,该透明导体包括至少一种金属氧化物。
- 如权利要求17所述的薄膜晶体管装置的制造方法,其特征在于,该至少一种金属氧化物包括In、Zn、Sn、Ga、Al、As、Cd、Hg、Tl、Pb、Ag、Au、Ge、Sb、Bi、Hf或Zr,或其中的组合中的一种氧化物。
- 如权利要求14所述的薄膜晶体管装置的制造方法,其特征在于,还包括:在该第二导电层上沉积第三导电层;及利用该第四光罩图案化该第三导电层使得在该第三导电层中的图案与在该第二导电层中的图案对准。
- 如权利要求19所述的薄膜晶体管装置的制造方法,其特征在于,该第二导电层包括反射材料,及该第三导电层包括透明材料。
- 如权利要求14所述的薄膜晶体管装置的制造方法,其特征在于,还包括:在该第二导电层上沉积第三导电层;及利用该第四光罩图案化该第三导电层使得该第三导电层的一部分留在该第二导电层上及该第三导电层的另一部分从该第二导电层上移除。
- 如权利要求21所述的薄膜晶体管装置的制造方法,其特征在于,该第二导电层包括反射材料,及该第三导电层包括透明材料。
- 如权利要求14所述的薄膜晶体管装置的制造方法,其特征在于,还包括:利用该第一光罩图案化该第一导电层以形成电容的第一电极;及利用该第四光罩图案化该第二导电层以形成该电容的第二电极,该第二电极与该第一电极相背,该第二电极及该第一电极夹着该第一介电层和该第二介电层中的至少一个。
- 如权利要求14所述的薄膜晶体管装置的制造方法,其特征在于,该半导体层包括选自非晶硅、多晶硅及In、Zn、Sn、Ga、Al、As、Cd、Hg、Tl、Pb、Ag、Au、Ge、Sb、Bi、Hf或Zr,或其中的组合的氧化物中的一种材料。
- 一种显示器,其特征在于,包括如权利要求1~13任一项所述的薄膜晶体管装置。
- 如权利要求25所述的显示器,其特征在于,还包括像素限定层、发光层、阴极层及封装层,该像素限定层设置在该像素电极部所设置的位置外的区域中,该发光层设置在像素电极部及该像素限定层上,该像素电极部及该阴极层夹着该发光层,该封装体设置在该阴极层上。
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PCT/CN2015/087934 WO2016029830A1 (zh) | 2014-08-24 | 2015-08-24 | 薄膜晶体管装置、显示器及其制造方法 |
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US9698173B2 (en) | 2017-07-04 |
US20160056184A1 (en) | 2016-02-25 |
KR20170071481A (ko) | 2017-06-23 |
KR101990712B1 (ko) | 2019-09-30 |
WO2016029830A1 (zh) | 2016-03-03 |
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