CN105609472B - 压力传感器的封装结构及其制造方法 - Google Patents
压力传感器的封装结构及其制造方法 Download PDFInfo
- Publication number
- CN105609472B CN105609472B CN201511008036.5A CN201511008036A CN105609472B CN 105609472 B CN105609472 B CN 105609472B CN 201511008036 A CN201511008036 A CN 201511008036A CN 105609472 B CN105609472 B CN 105609472B
- Authority
- CN
- China
- Prior art keywords
- pressure sensor
- dielectric chamber
- perforate
- bottom panel
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 230000008878 coupling Effects 0.000 claims abstract description 40
- 238000010168 coupling process Methods 0.000 claims abstract description 40
- 238000005859 coupling reaction Methods 0.000 claims abstract description 40
- 238000005538 encapsulation Methods 0.000 claims abstract description 36
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 31
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 238000000605 extraction Methods 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511008036.5A CN105609472B (zh) | 2015-12-24 | 2015-12-24 | 压力传感器的封装结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511008036.5A CN105609472B (zh) | 2015-12-24 | 2015-12-24 | 压力传感器的封装结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105609472A CN105609472A (zh) | 2016-05-25 |
CN105609472B true CN105609472B (zh) | 2018-02-23 |
Family
ID=55989279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201511008036.5A Active CN105609472B (zh) | 2015-12-24 | 2015-12-24 | 压力传感器的封装结构及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN105609472B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112014000B (zh) * | 2019-05-28 | 2023-09-01 | 武汉杰开科技有限公司 | 多器件封装结构及其制作方法 |
CN112014027B (zh) * | 2019-05-28 | 2023-09-01 | 武汉杰开科技有限公司 | 多器件封装结构及其制作方法 |
CN112014026B (zh) * | 2019-05-28 | 2023-09-01 | 武汉杰开科技有限公司 | 压力传感器及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101106839A (zh) * | 2006-07-10 | 2008-01-16 | 雅马哈株式会社 | 压力传感器及其制造方法 |
CN103011053A (zh) * | 2012-12-28 | 2013-04-03 | 矽格微电子(无锡)有限公司 | 传感器芯片正面向下外露的封装结构及封装方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8242588B2 (en) * | 2009-07-17 | 2012-08-14 | Barry Industries, Inc. | Lead frame based ceramic air cavity package |
-
2015
- 2015-12-24 CN CN201511008036.5A patent/CN105609472B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101106839A (zh) * | 2006-07-10 | 2008-01-16 | 雅马哈株式会社 | 压力传感器及其制造方法 |
CN103011053A (zh) * | 2012-12-28 | 2013-04-03 | 矽格微电子(无锡)有限公司 | 传感器芯片正面向下外露的封装结构及封装方法 |
Also Published As
Publication number | Publication date |
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CN105609472A (zh) | 2016-05-25 |
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C06 | Publication | ||
PB01 | Publication | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20180212 Address after: 230000 room 208, A2 building, No. 800 Innovation Industrial Park, No. 800, Wangjiang West Road, Anhui high tech Zone Patentee after: Hefei Silicon Microelectronics Technology Co.,Ltd. Address before: Room 190, room H2, two, innovation industrial park, No. 2800, new avenue of innovation, Hefei high tech Zone, Anhui Patentee before: HEFEI ZUAN INVESTMENT PARTNERSHIP ENTERPRISE |
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EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160525 Assignee: Anhui Xingtai Financial Leasing Co.,Ltd. Assignor: Hefei Silicon Microelectronics Technology Co.,Ltd. Contract record no.: X2022340000003 Denomination of invention: Packaging structure of pressure sensor and its manufacturing method Granted publication date: 20180223 License type: Exclusive License Record date: 20220418 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Packaging structure of pressure sensor and its manufacturing method Effective date of registration: 20220422 Granted publication date: 20180223 Pledgee: Anhui Xingtai Financial Leasing Co.,Ltd. Pledgor: Hefei Silicon Microelectronics Technology Co.,Ltd. Registration number: Y2022980004560 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230727 Granted publication date: 20180223 Pledgee: Anhui Xingtai Financial Leasing Co.,Ltd. Pledgor: Hefei Silicon Microelectronics Technology Co.,Ltd. Registration number: Y2022980004560 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Anhui Xingtai Financial Leasing Co.,Ltd. Assignor: Hefei Silicon Microelectronics Technology Co.,Ltd. Contract record no.: X2022340000003 Date of cancellation: 20230810 |