CN105553459A - 浮地压控忆阻器仿真器电路 - Google Patents
浮地压控忆阻器仿真器电路 Download PDFInfo
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- CN105553459A CN105553459A CN201510937478.1A CN201510937478A CN105553459A CN 105553459 A CN105553459 A CN 105553459A CN 201510937478 A CN201510937478 A CN 201510937478A CN 105553459 A CN105553459 A CN 105553459A
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- 238000004088 simulation Methods 0.000 claims abstract description 4
- 230000003321 amplification Effects 0.000 abstract description 8
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 8
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000036581 peripheral resistance Effects 0.000 description 3
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
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CN201510937478.1A CN105553459B (zh) | 2015-12-15 | 2015-12-15 | 浮地压控忆阻器仿真器电路 |
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CN201510937478.1A CN105553459B (zh) | 2015-12-15 | 2015-12-15 | 浮地压控忆阻器仿真器电路 |
Publications (2)
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CN105553459A true CN105553459A (zh) | 2016-05-04 |
CN105553459B CN105553459B (zh) | 2018-06-01 |
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CN (1) | CN105553459B (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106130713A (zh) * | 2016-07-14 | 2016-11-16 | 郑州轻工业学院 | 一种具有双忆阻器的最简四维自治混沌***及实现电路 |
CN107194048A (zh) * | 2017-05-09 | 2017-09-22 | 重庆邮电大学 | 一种基于HP TiO2忆阻模型的等效模拟电路 |
CN107993686A (zh) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | 一种浮地压控忆阻器等效元件 |
CN108172254A (zh) * | 2018-01-02 | 2018-06-15 | 深圳璞芯智能科技有限公司 | 一种大动态范围浮地忆阻等效元件及非线性可控模拟电阻 |
CN108718190A (zh) * | 2018-06-01 | 2018-10-30 | 杭州电子科技大学 | 一种指数型局部有源忆阻器仿真器 |
CN108846215A (zh) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | 一种极简的浮地荷控忆阻器电路仿真模型 |
CN108875204A (zh) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | 一种极简的浮地荷控忆感器电路仿真模型 |
CN109086558A (zh) * | 2018-09-29 | 2018-12-25 | 杭州电子科技大学 | 对数型局部有源忆阻器仿真器 |
CN109344467A (zh) * | 2018-09-14 | 2019-02-15 | 常州大学 | 一种极简浮地hp忆阻等效电路 |
CN109672516A (zh) * | 2017-10-13 | 2019-04-23 | 西华大学 | 一种荷控忆阻器混沌电路 |
CN111564970A (zh) * | 2020-06-12 | 2020-08-21 | 成都师范学院 | 一种接地转浮地的通用转换电路 |
CN113054987A (zh) * | 2021-03-11 | 2021-06-29 | 杭州电子科技大学 | 一种同侧双生局部有源忆阻器仿真器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012156126A2 (de) * | 2011-05-19 | 2012-11-22 | Robert Bosch Gmbh | Sensorelement mit piezoelektrischem wandler |
CN202998051U (zh) * | 2012-12-27 | 2013-06-12 | 西南大学 | 一种基于忆阻器的超混沌***实现电路 |
CN103744288A (zh) * | 2013-12-20 | 2014-04-23 | 广西大学 | 一种基于忆阻器的自适应pd控制器电路 |
CN205265656U (zh) * | 2015-12-15 | 2016-05-25 | 杭州电子科技大学 | 一种浮地压控忆阻器仿真器电路 |
-
2015
- 2015-12-15 CN CN201510937478.1A patent/CN105553459B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012156126A2 (de) * | 2011-05-19 | 2012-11-22 | Robert Bosch Gmbh | Sensorelement mit piezoelektrischem wandler |
CN202998051U (zh) * | 2012-12-27 | 2013-06-12 | 西南大学 | 一种基于忆阻器的超混沌***实现电路 |
CN103744288A (zh) * | 2013-12-20 | 2014-04-23 | 广西大学 | 一种基于忆阻器的自适应pd控制器电路 |
CN205265656U (zh) * | 2015-12-15 | 2016-05-25 | 杭州电子科技大学 | 一种浮地压控忆阻器仿真器电路 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106130713B (zh) * | 2016-07-14 | 2019-03-05 | 郑州轻工业学院 | 一种具有双忆阻器的最简四维自治混沌***及实现电路 |
CN106130713A (zh) * | 2016-07-14 | 2016-11-16 | 郑州轻工业学院 | 一种具有双忆阻器的最简四维自治混沌***及实现电路 |
CN107194048A (zh) * | 2017-05-09 | 2017-09-22 | 重庆邮电大学 | 一种基于HP TiO2忆阻模型的等效模拟电路 |
CN107194048B (zh) * | 2017-05-09 | 2020-09-29 | 重庆邮电大学 | 一种基于HP TiO2忆阻模型的等效模拟电路 |
CN109672516A (zh) * | 2017-10-13 | 2019-04-23 | 西华大学 | 一种荷控忆阻器混沌电路 |
CN108172254A (zh) * | 2018-01-02 | 2018-06-15 | 深圳璞芯智能科技有限公司 | 一种大动态范围浮地忆阻等效元件及非线性可控模拟电阻 |
CN108172254B (zh) * | 2018-01-02 | 2020-12-11 | 深圳璞芯智能科技有限公司 | 一种大动态范围浮地忆阻等效元件及非线性可控模拟电阻 |
CN107993686A (zh) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | 一种浮地压控忆阻器等效元件 |
CN107993686B (zh) * | 2018-01-12 | 2020-09-01 | 深圳璞芯智能科技有限公司 | 一种浮地压控忆阻器等效元件 |
CN108718190A (zh) * | 2018-06-01 | 2018-10-30 | 杭州电子科技大学 | 一种指数型局部有源忆阻器仿真器 |
CN108718190B (zh) * | 2018-06-01 | 2022-03-01 | 杭州电子科技大学 | 一种指数型局部有源忆阻器仿真器 |
CN108875204A (zh) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | 一种极简的浮地荷控忆感器电路仿真模型 |
CN108875204B (zh) * | 2018-06-15 | 2022-04-26 | 成都师范学院 | 一种极简的浮地荷控忆感器电路仿真模型 |
CN108846215A (zh) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | 一种极简的浮地荷控忆阻器电路仿真模型 |
CN108846215B (zh) * | 2018-06-21 | 2022-04-26 | 成都师范学院 | 一种极简的浮地荷控忆阻器电路仿真模型 |
CN109344467A (zh) * | 2018-09-14 | 2019-02-15 | 常州大学 | 一种极简浮地hp忆阻等效电路 |
CN109086558A (zh) * | 2018-09-29 | 2018-12-25 | 杭州电子科技大学 | 对数型局部有源忆阻器仿真器 |
CN111564970A (zh) * | 2020-06-12 | 2020-08-21 | 成都师范学院 | 一种接地转浮地的通用转换电路 |
CN113054987A (zh) * | 2021-03-11 | 2021-06-29 | 杭州电子科技大学 | 一种同侧双生局部有源忆阻器仿真器 |
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CN105553459B (zh) | 2018-06-01 |
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