CN105474374A - 密封用片、以及半导体装置的制造方法 - Google Patents
密封用片、以及半导体装置的制造方法 Download PDFInfo
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- CN105474374A CN105474374A CN201480046137.9A CN201480046137A CN105474374A CN 105474374 A CN105474374 A CN 105474374A CN 201480046137 A CN201480046137 A CN 201480046137A CN 105474374 A CN105474374 A CN 105474374A
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- QTFHTNFVUCUDIR-UHFFFAOYSA-K trisodium 6-[(2,4-diaminophenyl)diazenyl]-3-[[4-[4-[[7-[(2,4-diaminophenyl)diazenyl]-1-hydroxy-3-sulfonatonaphthalen-2-yl]diazenyl]-2-sulfonatoanilino]phenyl]diazenyl]-4-hydroxynaphthalene-2-sulfonate Chemical compound C1=CC(=CC=C1NC2=C(C=C(C=C2)N=NC3=C(C=C4C=CC(=CC4=C3[O-])N=NC5=C(C=C(C=C5)N)N)S(=O)(=O)O)S(=O)(=O)[O-])N=NC6=C(C=C7C=CC(=CC7=C6[O-])N=NC8=C(C=C(C=C8)N)N)S(=O)(=O)O.[Na+].[Na+].[Na+] QTFHTNFVUCUDIR-UHFFFAOYSA-K 0.000 description 1
- UJMBCXLDXJUMFB-UHFFFAOYSA-K trisodium;5-oxo-1-(4-sulfonatophenyl)-4-[(4-sulfonatophenyl)diazenyl]-4h-pyrazole-3-carboxylate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)C1=NN(C=2C=CC(=CC=2)S([O-])(=O)=O)C(=O)C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 UJMBCXLDXJUMFB-UHFFFAOYSA-K 0.000 description 1
- KJPJZBYFYBYKPK-UHFFFAOYSA-N vat yellow 1 Chemical compound C12=CC=CC=C2C(=O)C2=CC=C3N=C4C5=CC=CC=C5C(=O)C5=C4C4=C3C2=C1N=C4C=C5 KJPJZBYFYBYKPK-UHFFFAOYSA-N 0.000 description 1
- GFFQNEGBFFGLQG-UHFFFAOYSA-N vat yellow 2 Chemical compound S1C2=C3C(=O)C4=CC=C5N=C(C=6C=CC=CC=6)SC5=C4C(=O)C3=CC=C2N=C1C1=CC=CC=C1 GFFQNEGBFFGLQG-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Abstract
本发明提供一种密封用片,是用于填埋半导体芯片的密封用片,其任意一个表面的表面固有电阻值为1.0×1012Ω以下。
Description
技术领域
本发明涉及密封用片、以及半导体装置的制造方法。
背景技术
以往,作为半导体装置的制造方法,已知有在将固定于基板等上的1个或多个半导体芯片用密封树脂密封后、将密封体切割为半导体装置单元的封装体的方法。作为此种密封树脂,例如已知有热固性树脂片(例如参照专利文献1)。
现有技术文献
专利文献
专利文献1:日本特开2006-19714号公报
发明内容
发明所要解决的问题
然而,以往在使用热固性树脂片制造半导体装置的情况下,形成于半导体芯片上的电路会受到破坏。
用于解决问题的方法
本发明人等对于半导体芯片上的电路受到破坏的原因进行了研究。其结果是查明,在将贴合在热固性树脂片上的剥离用片剥下时,会在剥离用片与热固性树脂片之间产生剥离带电,半导体芯片上的电路因该产生的静电而受到破坏。
本发明人等为了解决上述以往的问题进行了研究,结果发现,通过将密封用片的任意一个表面的表面固有电阻值设为一定的范围内,就可以抑制半导体芯片上的电路受到破坏的情况,从而完成了本发明。
即,本发明的密封用片是用于填埋半导体芯片的密封用片,其特征在于,任意一个表面的表面固有电阻值为1.0×1012Ω以下。
根据所述构成,由于密封用片的任意一个表面的表面固有电阻值为1.0×1012Ω以下,因此难以带电。因而,在将贴合在密封用片上的剥离用片剥下时,可以抑制在剥离用片与密封用片之间产生剥离带电的情况。其结果是,可以防止半导体芯片因该剥离带电而被破坏,提高使用所述密封用片制造的半导体装置的可靠性。
在所述构成中,优选在所述密封用片中含有防静电剂。如果在密封用片中含有防静电剂,则在将剥离用片剥离后也具有防静电效果。其结果是,在从剥离用片剥离后,也可以抑制由带电造成的半导体芯片的破坏。
另外,本发明是一种半导体装置的制造方法,其特征在于,
具备:
工序A,在支撑体上固定半导体芯片;和
工序B,将固定于所述支撑体的所述半导体芯片填埋在密封用片中而形成密封体,
所述密封用片的任意一个表面的表面固有电阻值为1.0×1012Ω以下。
根据所述构成,密封用片的任意一个表面的表面固有电阻值为1.0×1012Ω以下。由于所述表面固有电阻值为1.0×1012Ω以下,因此可以发挥防静电效果。其结果是,可以防止半导体芯片因将贴合在密封用片上的剥离用片剥离时产生的剥离带电而被破坏,提高使用所述密封用片制造的半导体装置的可靠性。
在所述构成中,优选在所述密封用片中含有防静电剂。
如果在密封用片中含有防静电剂,则在从剥离用片剥离后也具有防静电效果。其结果是,在从剥离用片剥离后,也可以抑制由带电造成的半导体芯片的破坏。
发明效果
根据本发明,可以提供能够防止半导体芯片因剥离带电而被破坏、提高所制造的半导体装置的可靠性的密封用片、以及使用了该密封用片的半导体装置的制造方法。
附图说明
图1是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图2是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图3是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图4是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图5是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图6是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图7是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图8是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图9是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图10是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图11是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
图12是用于说明剥离带电电压的测定方法的概略构成图。
图13是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图14是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图15是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图16是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图17是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图18是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图19是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
图20是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。
具体实施方式
以下,在参照附图的同时,对本发明的实施方式进行说明。然而,本发明并不仅限定于这些实施方式。
[第一实施方式]
第一实施方式的半导体装置的制造方法至少具备:
工序A,将半导体芯片倒装芯片式接合在半导体晶片的电路形成面;和
工序B,将倒装芯片式接合在所述半导体晶片上的所述半导体芯片填埋在密封用片中而形成密封体,
所述密封用片的任意一个表面的表面固有电阻值为1.0×1012Ω以下。
即,第一实施方式中,对本发明中的“支撑体”为“半导体晶片”的情况进行说明。第一实施方式是所谓的Chip-On-Wafer方式的半导体装置的制造方法。
图1~图11是用于说明第一实施方式的半导体装置的制造方法的剖面示意图。
[准备工序]
如图1所示,第一实施方式的半导体装置的制造方法中,首先,准备具有电路形成面23a的1个或多个半导体芯片23、和具有电路形成面22a的半导体晶片22。而且,以下,对将多个半导体芯片倒装芯片式接合在半导体晶片上的情况进行说明。
[倒装芯片式接合半导体芯片的工序]
然后,如图2所示,将半导体芯片23倒装芯片式接合在半导体晶片22的电路形成面22a(工序A)。在将半导体芯片23向半导体晶片22上搭载时,可以使用倒装片接合机或芯片接合机等公知的装置。具体而言,将形成于半导体芯片23的电路形成面23a的凸块23b与形成于半导体晶片22的电路形成面22a的电极22b电连接。由此,就可以得到将多个半导体芯片23安装在半导体晶片22上的层叠体20。此时,也可以在半导体芯片23的电路形成面23a贴附底部填充用的树脂片24。该情况下,当将半导体芯片23倒装芯片式接合在半导体晶片22上时,就可以对半导体芯片23与半导体晶片22之间的间隙进行树脂密封。而且,对于将贴附有底部填充用的树脂片24的半导体芯片23倒装芯片式接合在半导体晶片22上的方法,例如公开于日本特开2013-115186号公报等中,因此省略此处的详细说明。
[准备密封用片的工序]
另外,本实施方式的半导体装置的制造方法中,如图3所示,准备密封用片10。通常以层叠于聚对苯二甲酸乙二醇酯(PET)膜等剥离衬垫11上的状态准备密封用片10。该情况下,为了容易地进行密封用片10的剥离,也可以对剥离衬垫11实施脱模处理。
(密封用片)
密封用片10的任意一个表面的表面固有电阻值为1.0×1012Ω以下,优选为1.0×1011Ω以下,更优选为1.0×1010Ω以下。在密封用片10具有多层结构、在任意一方的最外层中含有防静电剂的情况下,含有防静电剂的最外层的表面的表面固有电阻值优选为1.0×1012Ω以下,更优选为1.0×1011Ω以下,进一步优选为1.0×1010Ω以下。另外,虽然所述表面固有电阻值越小越好,然而例如可以举出1.0×105Ω以上、1.0×106Ω以上、1.0×107Ω以上。由于所述表面固有电阻值为1.0×1012Ω以下,因此难以带电。因而,可以进一步发挥防静电效果。所述表面固有电阻值是指利用实施例记载的方法测定的值。
在带有剥离衬垫11的密封用片10中,在剥离角度为90°、拉伸速度为300mm/min的剥离试验中的剥离衬垫11与密封用片10的剥离力优选为0.01~0.5N/20mm,更优选为0.02~0.4N/20mm。如果所述剥离力为0.01N/20mm以上,则在将密封片利用吸附夹头等吸附剥离片11面侧并进行搬送时可以不使剥离片剥离、或产生浮起地搬送。另外,由于所述剥离力为0.5N/20mm以下,因此可以在密封后或热固化后容易地将剥离片剥离。
在带有剥离衬垫11的密封用片10中,在剥离角度180°、剥离速度10m/min的条件下将剥离衬垫11与密封用片10剥离时的剥离带电电压的绝对值优选为0.5kV以下(-0.5kV~+0.5kV),更优选为0.3kV以下(-0.3kV~+0.3kV),进一步优选为0.2kV以下(-0.2kV~+0.2kV)。如果所述剥离带电电压的绝对值为0.5kV以下,则可以进一步发挥防静电效果。
此处,对剥离带电电压的测定方法进行说明。
图12是用于说明剥离带电电压的测定方法的概略构成图。
首先,准备在两面贴合有剥离衬垫11的密封用片10。然后,在预先进行了除电的亚克力板100(厚度:1mm、宽度:70mm、长度:100mm)上,贴合剥离了与测定面相反一侧的剥离衬垫11的密封用片。在贴合时,使用手压滚筒,以使亚克力板100与密封用片10的剥离衬垫11除去面夹隔着双面胶带相面对的方式进行。在该状态下,在23℃、50%RH的环境下放置一天。然后,将贴合有密封用片10的亚克力板100固定在样品固定台102上。然后,将剥离衬垫11的端部固定在自动卷绕机上,以使剥离角度为180°、剥离速度为10m/min的方式进行剥离。利用固定在相对于密封用片10的表面为100mm的位置的电位测量仪104(春日电机公司制、KSD-0103)测定此时产生的剥离用片侧的面的电位。测定在23℃、50%RH的环境下进行。
密封用片10优选含有防静电剂。如果在密封用片10中含有防静电剂,则在从剥离用片11剥离后也具有防静电效果。其结果是,在从剥离用片11剥离后,也可以抑制由带电造成的半导体芯片的破坏。特别是,如果密封用片10具有多层结构,在多层结构的密封用片10的剥离用片11侧的最外层中含有防静电剂,则可以更加有效地抑制将剥离用片11与密封用片10剥离时的剥离带电。
而且,也可以在剥离用片11中含有防静电剂。
作为所述防静电剂,可以举出季铵盐、吡啶鎓盐、具有伯氨基、仲氨基、叔氨基等阳离子性官能团的阳离子型防静电剂、磺酸盐或硫酸酯盐、膦酸盐、磷酸酯盐等具有阴离子性官能团的阴离子型防静电剂、烷基甜菜碱及其衍生物、咪唑啉及其衍生物、苯胺及其衍生物等两性型防静电剂、氨基醇及其衍生物、甘油及其衍生物、聚乙二醇及其衍生物等非离子型防静电剂、以及将具有上述阳离子型、阴离子型、两性离子型的离子导电性基的单体聚合或共聚而得的离子导电性聚合物(高分子型防静电剂)。这些化合物既可以单独地使用,也可以混合使用2种以上。其中,优选高分子型防静电剂。如果使用高分子型防静电剂,则难以从密封用片10、剥离用片11中渗出。其结果是,可以抑制由经时造成的防静电功能的降低。
具体而言,作为阳离子型防静电剂,例如可以举出烷基三甲基铵盐、丙烯酰基酰胺丙基三甲基铵甲基硫酸盐、烷基苄基甲基铵盐、酰基氯化胆碱、聚二甲基氨基乙基甲基丙烯酸酯等具有季铵基的(甲基)丙烯酸酯共聚物、聚乙烯基苄基三甲基氯化铵等具有季铵基的苯乙烯共聚物、聚二烯丙基二甲基氯化铵等具有季铵基的二烯丙基胺共聚物等。这些化合物既可以单独地使用,也可以混合使用2种以上。
作为阴离子型防静电剂,例如可以举出烷基磺酸盐、烷基苯磺酸盐、烷基硫酸酯盐、烷基乙氧基硫酸酯盐、烷基磷酸酯盐、含有磺酸基的苯乙烯共聚物。这些化合物既可以单独地使用,也可以混合使用2种以上。
作为两性离子型防静电剂,例如可以举出烷基甜菜碱、烷基咪唑鎓甜菜碱、羰基甜菜碱接枝共聚物。这些化合物既可以单独地使用,也可以混合使用2种以上。
作为非离子型防静电剂,例如可以举出脂肪酸烷基醇酰胺、二(2-羟基乙基)烷基胺、聚氧乙烯烷基胺、脂肪酸甘油酯、聚氧乙二醇脂肪酸酯、失水山梨醇脂肪酸酯、聚氧失水山梨醇脂肪酸酯、聚氧乙烯烷基苯基醚、聚氧乙烯烷基醚、聚乙二醇、聚氧亚乙二胺、由聚醚与聚酯与聚酰胺构成的共聚物、甲氧基聚乙二醇(甲基)丙烯酸酯等。这些化合物既可以单独地使用,也可以混合使用2种以上。
作为高分子型防静电剂的其他例子,例如可以举出聚苯胺、聚吡咯、聚噻吩等。
另外,作为所述防静电剂,可以举出导电性物质。作为导电性物质,例如可以举出氧化锡、氧化锑、氧化铟、氧化镉、氧化钛、氧化锌、铟、锡、锑、金、银、铜、铝、镍、铬、钛、铁、钴、碘化铜、以及它们的合金或混合物。
所述防静电剂的含量优选相对于所添加的层的全部树脂成分为50重量%以下,更优选为30重量%以下。另外,所述防静电剂的含量优选相对于所添加的层的全部树脂成分为5重量%以上,更优选为10重量%以上。通过在所述数值范围内含有所述防静电剂,就可以不损害所添加的层的功能地附加防静电功能。此处,所谓“相对于所添加的层的全部树脂成分为50重量%以下”,是指以下的意味。
(a)所添加的层为密封用片10的情况
在密封用片10由1层构成的情况下,是指相对于构成密封用片10的全部树脂成分为50重量%以下。
在密封用片10由多层结构构成的情况下,是指相对于构成多个层中的1个层的全部树脂成分为50重量%以下。
(b)所添加的层为剥离用片11的情况
是指相对于构成剥离用片11的全部树脂成分为50重量%以下。
密封用片10优选含有环氧树脂、以及作为固化剂的酚醛树脂。由此,就可以获得良好的热固性。
作为所述环氧树脂,没有特别限定。例如可以使用三苯基甲烷型环氧树脂、甲酚线性酚醛型环氧树脂、联苯型环氧树脂、改性双酚A型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、改性双酚F型环氧树脂、双环戊二烯型环氧树脂、苯酚线性酚醛型环氧树脂、苯氧基树脂等各种环氧树脂。这些环氧树脂既可以单独使用,也可以并用2种以上。
从确保环氧树脂的固化后的韧性及环氧树脂的反应性的观点考虑,优选环氧当量为150~250、软化点或熔点为50~130℃的在常温下为固体的环氧树脂,其中,从可靠性的观点考虑,更优选三苯基甲烷型环氧树脂、甲酚线性酚醛型环氧树脂、联苯型环氧树脂。
所述酚醛树脂只要是在与环氧树脂之间发生固化反应的树脂,就没有特别限定。例如可以使用苯酚线性酚醛树脂、苯酚芳烷基树脂、联苯基芳烷基树脂、双环戊二烯型酚醛树脂、甲酚线性酚醛树脂、甲阶酚醛树脂等。这些酚醛树脂既可以单独地使用,也可以并用2种以上。
作为所述酚醛树脂,从与环氧树脂的反应性的观点考虑,优选使用羟基当量为70~250、软化点为50~110℃的树脂,其中从固化反应性高的观点考虑,可以合适地使用苯酚线性酚醛树脂。另外,从可靠性的观点考虑,可以合适地使用苯酚芳烷基树脂或联苯基芳烷基树脂之类的低吸湿性的树脂。
对于环氧树脂与酚醛树脂的配合比例,从固化反应性的观点考虑,优选以相对于环氧树脂中的环氧基1当量而言酚醛树脂中的羟基的合计为0.7~1.5当量的方式配合,更优选为0.9~1.2当量。
密封用片10中的环氧树脂及酚醛树脂的合计含量优选为2.5重量%以上,更优选为3.0重量%以上。如果是2.5重量%以上,则可以良好地获得与半导体芯片23、半导体晶片22等的粘接力。密封用片10中的环氧树脂及酚醛树脂的合计含量优选为20重量%以下,更优选为10重量%以下。如果是20重量%以下,则可以降低吸湿性。
密封用片10优选含有热塑性树脂。由此,就可以获得未固化时的处置性、固化物的低应力性。
作为所述热塑性树脂,可以举出天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙或6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、氟树脂、苯乙烯-异丁烯-苯乙烯嵌段共聚物等。这些热塑性树脂可以单独地使用,或者并用2种以上。其中,从低应力性、低吸水性的观点考虑,优选苯乙烯-异丁烯-苯乙烯嵌段共聚物。
密封用片10中的热塑性树脂的含量优选为1.5重量%以上,更优选为2.0重量%以上。如果是1.5重量%以上,则可以获得柔软性、挠曲性。密封用片10中的热塑性树脂的含量优选为6重量%以下,更优选为4重量%以下。如果是4重量%以下,则与半导体芯片23或半导体晶片22的粘接性良好。
密封用片10优选含有无机填充剂。
所述无机填充剂没有特别限定,可以使用以往公知的各种填充剂,例如可以举出石英玻璃、滑石、二氧化硅(熔融二氧化硅或结晶性二氧化硅等)、氧化铝、氮化铝、氮化硅、氮化硼的粉末。它们既可以单独地使用,也可以并用2种以上。其中,从可以良好地降低线膨胀系数的理由考虑,优选二氧化硅、氧化铝,更优选二氧化硅。
作为二氧化硅,优选二氧化硅粉末,更优选熔融二氧化硅粉末。作为熔融二氧化硅粉末,可以举出球状熔融二氧化硅粉末、破碎熔融二氧化硅粉末,然而从流动性的观点考虑,优选球状熔融二氧化硅粉末。其中,优选平均粒子直径为10~30μm的范围的球状熔融二氧化硅粉末,更优选15~25μm的范围的球状熔融二氧化硅粉末。
而且,平均粒子直径例如可以通过使用从母料中任意地抽出的试样、使用激光衍射散射式粒度分布测定装置测定而导出。
密封用片10中的所述无机填充剂的含量优选相对于密封用片10整体为75~95重量%,更优选为78~95重量%。如果所述无机填充剂的含量相对于密封用片10整体为75重量%以上,则可以压低热膨胀率,由此可以抑制由热冲击造成的机械的破坏。其结果是,另一方面,如果所述无机填充剂的含量相对于密封用片10整体为95重量%以下,则柔软性、流动性、粘接性会更加良好。
密封用片10优选含有固化促进剂。
作为固化促进剂,只要是使环氧树脂与酚醛树脂的固化推进的物质,就没有特别限定,例如可以举出三苯基膦、四苯基鏻四苯基硼酸盐等有机磷系化合物;2-苯基-4,5-二羟基甲基咪唑、2-苯基-4-甲基-5-羟基甲基咪唑等咪唑系化合物等。其中,从即使混炼时的温度升高也不会使固化反应急剧地推进、可以良好地制作密封用片10的理由考虑,优选2-苯基-4,5-二羟基甲基咪唑。
固化促进剂的含量优选相对于环氧树脂及酚醛树脂的合计100重量份为0.1~5重量份。
密封用片10优选含有阻燃剂成分。由此,就可以减少因部件短路或放热等而着火时的燃烧扩大。作为阻燃剂组成成分,例如可以使用氢氧化铝、氢氧化镁、氢氧化铁、氢氧化钙、氢氧化锡、复合化金属氢氧化物等各种金属氢氧化物;磷腈系阻燃剂等。
从用少量也可以发挥阻燃效果的观点考虑,磷腈系阻燃剂中所含的磷元素的含有率优选为12重量%以上。
密封用片10中的阻燃剂成分的含量在全部有机成分(除去无机填料)中,优选为10重量%以上,更优选为15重量%以上。如果是10重量%以上,则可以良好地获得阻燃性。密封用片10中的热塑性树脂的含量优选为30重量%以下,更优选为25重量%以下。如果是30重量%以下,则会有固化物的物性降低(具体而言,是玻璃化转变温度或高温树脂强度等物性的降低)变少的趋势。
密封用片10优选含有硅烷偶联剂。作为硅烷偶联剂没有特别限定,可以举出3-环氧丙氧基丙基三甲氧基硅烷等。
密封用片10中的硅烷偶联剂的含量优选为0.1~3重量%。如果是0.1重量%以上,则可以充分地获得固化物的强度,可以降低吸水率。如果是3重量%以下,则可以降低释气量。
密封用片10优选被进行了着色。由此,就可以发挥优异的标记性及外观性,可以制成具有附加价值的外观的半导体装置。被着色了的密封用片10由于具有优异的标记性,因此可以实施标记,赋予文字信息、图形信息等各种信息。特别是,通过控制着色的颜色,能够以优异的可见性看到利用标记赋予的信息(文字信息、图形信息等)。此外,密封用片10也可以按照产品来分色。在使密封用片10有色的情况下(并非无色、透明的情况),作为利用着色呈现出的颜色没有特别限制,然而例如优选为黑色、蓝色、红色等深色,特别适合为黑色。
本实施方式中,所谓深色,基本上是指L*a*b*表色***中规定的L*为60以下(0~60)[优选为50以下(0~50),更优选为40以下(0~40)]的深的颜色。
另外,所谓黑色,基本上是指L*a*b*表色***中规定的L*为35以下(0~35)[优选为30以下(0~30),更优选为25以下(0~25)]的黑色系色。而且,在黑色中,L*a*b*表色***中规定的a*、b*可以分别与L*的值对应地适当选择。作为a*、b*,例如,优选双方都为-10~10,更优选为-5~5,特别优选为-3~3的范围(其中优选为0或近乎0)。
而且,本实施方式中,L*a*b*表色***中规定的L*、a*、b*是通过使用色彩色差计(商品名“CR-200”美能达公司制;色彩色差计)测定而求出。而且,L*a*b*表色***是国际照明委员会(CIE)在1976年推荐的颜色空间,是指被称作CIE1976(L*a*b*)表色***的颜色空间。另外,L*a*b*表色***在日本工业标准中,由JISZ8729规定。
在将密封用片10着色时,可以与所需的颜色对应地使用色材(着色剂)。本发明的密封用片既可以是一层构成,也可以由多个层构成,然而优选至少在与半导体晶片相面对的面的相反一面侧添加有着色剂。具体而言,在密封用片为1层构成的情况下,既可以在整个密封用片中均匀地含有着色剂,也可以以在与半导体晶片相面对的面的相反一面侧存在着色剂的不均匀存在的方式含有着色剂。另外,在由多个层构成的情况下,也可以在与半导体晶片22相面对的面的相反一面侧的层中添加着色剂,同时在其以外的层中不添加着色剂。本实施方式中,对本发明的密封用片为1层构成的密封用片为10的情况进行说明,对于密封用片为2层以上的情况,在后面使用图12进行说明。这是因为,如果在密封用片的与半导体晶片相面对的面的相反一面侧添加着色剂,则可以提高被激光标记了的部分的可见性。作为此种色材,可以合适地使用黑系色材、蓝系色材、红系色材等各种深色系色材,特别适合使用黑系色材。作为色材,可以是颜料、染料等任意一种。色材可以单独使用,或者组合使用2种以上。而且,作为染料,无论是酸性染料、反应染料、直接染料、分散染料、阳离子染料等哪种形态的染料都可以使用。另外,颜料的形态也没有特别限制,可以从公知的颜料中适当地选择使用。
特别是,如果使用染料作为色材,则会形成因溶解而使染料均匀或大致均匀地分散在密封用片10中的状态,因此可以容易地制造着色浓度均匀或大致均匀的密封用片10,从而可以提高标记性、外观性。
作为黑系色材,没有特别限制,然而例如可以从无机的黑系颜料、黑系染料中适当地选择。另外,作为黑系色材,可以是混合水青(cyan)系色材(蓝绿系色材)、洋红系色材(红紫系色材)及黄系色材(黄色系色材)而得的色材混合物。黑系色材可以单独使用,或者组合使用2种以上。当然也可以将黑系色材与黑色以外的颜色的色材并用。
具体而言,作为黑系色材,例如可以举出炭黑(炉法炭黑、槽法炭黑、乙炔黑、热解法炭黑、灯黑等)、石墨(graphite)、氧化铜、二氧化锰、偶氮系颜料(偶氮甲碱直接黑等)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁氧体(非磁性铁氧体、磁性铁氧体等)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬络合物、复合氧化物系黑色色素、蒽醌系有机黑色色素等。
本发明中,作为黑系色材,也可以利用C.I.溶剂黑3、C.I.溶剂黑7、C.I.溶剂黑22、C.I.溶剂黑27、C.I.溶剂黑29、C.I.溶剂黑34、C.I.溶剂黑43、C.I.溶剂黑70、C.I.直接黑17、C.I.直接黑19、C.I.直接黑22、C.I.直接黑32、C.I.直接黑38、C.I.直接黑51、C.I.直接黑71、C.I.酸性黑1、C.I.酸性黑2、C.I.酸性黑24、C.I.酸性黑26、C.I.酸性黑31、C.I.酸性黑48、C.I.酸性黑52、C.I.酸性黑107、C.I.酸性黑109、C.I.酸性黑110、C.I.酸性黑119、C.I.酸性黑154、C.I.分散黑1、C.I.分散黑3、C.I.分散黑10、C.I.分散黑24等黑系染料;C.I.颜料黑1、C.I.颜料黑7等黑系颜料等。
作为此种黑系色材,例如在市场上可以买到商品名“OilBlackBY”、商品名“OilBlackBS”、商品名“OilBlackHBB”、商品名“OilBlack803”、商品名“OilBlack860”、商品名“OilBlack5970”、商品名“OilBlack5906”、商品名“OilBlack5905”(Orient化学工业株式会社制)等。
作为黑系色材以外的色材,例如可以举出水青系色材、洋红系色材、黄系色材等。作为水青系色材,例如可以举出C.I.溶剂蓝25、C.I.溶剂蓝36、C.I.溶剂蓝60、C.I.溶剂蓝70、C.I.溶剂蓝93、C.I.溶剂蓝95;C.I.酸性蓝6、C.I.酸性蓝45等水青系染料;C.I.颜料蓝1、C.I.颜料蓝2、C.I.颜料蓝3、C.I.颜料蓝15、C.I.颜料蓝15:1、C.I.颜料蓝15:2、C.I.颜料蓝15:3、C.I.颜料蓝15:4、C.I.颜料蓝15:5、C.I.颜料蓝15:6、C.I.颜料蓝16、C.I.颜料蓝17、C.I.颜料蓝17:1、C.I.颜料蓝18、C.I.颜料蓝22、C.I.颜料蓝25、C.I.颜料蓝56、C.I.颜料蓝60、C.I.颜料蓝63、C.I.颜料蓝65、C.I.颜料蓝66;C.I.还原蓝4、C.I.还原蓝60;C.I.颜料绿7等水青系颜料等。
另外,在洋红系色材中,作为洋红系染料,例如可以举出C.I.溶剂红1、C.I.溶剂红3、C.I.溶剂红8、C.I.溶剂红23、C.I.溶剂红24、C.I.溶剂红25、C.I.溶剂红27、C.I.溶剂红30、C.I.溶剂红49、C.I.溶剂红52、C.I.溶剂红58、C.I.溶剂红63、C.I.溶剂红81、C.I.溶剂红82、C.I.溶剂红83、C.I.溶剂红84、C.I.溶剂红100、C.I.溶剂红109、C.I.溶剂红111、C.I.溶剂红121、C.I.溶剂红122;C.I.分散红9;C.I.溶剂紫8、C.I.溶剂紫13、C.I.溶剂紫14、C.I.溶剂紫21、C.I.溶剂紫27;C.I.分散紫1;C.I.碱性红1、C.I.碱性红2、C.I.碱性红9、C.I.碱性红12、C.I.碱性红13、C.I.碱性红14、C.I.碱性红15、C.I.碱性红17、C.I.碱性红18、C.I.碱性红22、C.I.碱性红23、C.I.碱性红24、C.I.碱性红27、C.I.碱性红29、C.I.碱性红32、C.I.碱性红34、C.I.碱性红35、C.I.碱性红36、C.I.碱性红37、C.I.碱性红38、C.I.碱性红39、C.I.碱性红40;C.I.碱性紫1、C.I.碱性紫3、C.I.碱性紫7、C.I.碱性紫10、C.I.碱性紫14、C.I.碱性紫15、C.I.碱性紫21、C.I.碱性紫25、C.I.碱性紫26、C.I.碱性紫27、28等。
在洋红系色材中,作为洋红系颜料,例如可以举出C.I.颜料红1、C.I.颜料红2、C.I.颜料红3、C.I.颜料红4、C.I.颜料红5、C.I.颜料红6、C.I.颜料红7、C.I.颜料红8、C.I.颜料红9、C.I.颜料红10、C.I.颜料红11、C.I.颜料红12、C.I.颜料红13、C.I.颜料红14、C.I.颜料红15、C.I.颜料红16、C.I.颜料红17、C.I.颜料红18、C.I.颜料红19、C.I.颜料红21、C.I.颜料红22、C.I.颜料红23、C.I.颜料红30、C.I.颜料红31、C.I.颜料红32、C.I.颜料红37、C.I.颜料红38、C.I.颜料红39、C.I.颜料红40、C.I.颜料红41、C.I.颜料红42、C.I.颜料红48:1、C.I.颜料红48:2、C.I.颜料红48:3、C.I.颜料红48:4、C.I.颜料红49、C.I.颜料红49:1、C.I.颜料红50、C.I.颜料红51、C.I.颜料红52、C.I.颜料红52:2、C.I.颜料红53:1、C.I.颜料红54、C.I.颜料红55、C.I.颜料红56、C.I.颜料红57:1、C.I.颜料红58、C.I.颜料红60、C.I.颜料红60:1、C.I.颜料红63、C.I.颜料红63:1、C.I.颜料红63:2、C.I.颜料红64、C.I.颜料红64:1、C.I.颜料红67、C.I.颜料红68、C.I.颜料红81、C.I.颜料红83、C.I.颜料红87、C.I.颜料红88、C.I.颜料红89、C.I.颜料红90、C.I.颜料红92、C.I.颜料红101、C.I.颜料红104、C.I.颜料红105、C.I.颜料红106、C.I.颜料红108、C.I.颜料红112、C.I.颜料红114、C.I.颜料红122、C.I.颜料红123、C.I.颜料红139、C.I.颜料红144、C.I.颜料红146、C.I.颜料红147、C.I.颜料红149、C.I.颜料红150、C.I.颜料红151、C.I.颜料红163、C.I.颜料红166、C.I.颜料红168、C.I.颜料红170、C.I.颜料红171、C.I.颜料红172、C.I.颜料红175、C.I.颜料红176、C.I.颜料红177、C.I.颜料红178、C.I.颜料红179、C.I.颜料红184、C.I.颜料红185、C.I.颜料红187、C.I.颜料红190、C.I.颜料红193、C.I.颜料红202、C.I.颜料红206、C.I.颜料红207、C.I.颜料红209、C.I.颜料红219、C.I.颜料红222、C.I.颜料红224、C.I.颜料红238、C.I.颜料红245;C.I.颜料紫3、C.I.颜料紫9、C.I.颜料紫19、C.I.颜料紫23、C.I.颜料紫31、C.I.颜料紫32、C.I.颜料紫33、C.I.颜料紫36、C.I.颜料紫38、C.I.颜料紫43、C.I.颜料紫50;C.I.还原红1、C.I.还原红2、C.I.还原红10、C.I.还原红13、C.I.还原红15、C.I.还原红23、C.I.还原红29、C.I.还原红35等。
另外,作为黄系色材,例如可以举出C.I.溶剂黄19、C.I.溶剂黄44、C.I.溶剂黄77、C.I.溶剂黄79、C.I.溶剂黄81、C.I.溶剂黄82、C.I.溶剂黄93、C.I.溶剂黄98、C.I.溶剂黄103、C.I.溶剂黄104、C.I.溶剂黄112、C.I.溶剂黄162等黄系染料;C.I.颜料橙31、C.I.颜料橙43;C.I.颜料黄1、C.I.颜料黄2、C.I.颜料黄3、C.I.颜料黄4、C.I.颜料黄5、C.I.颜料黄6、C.I.颜料黄7、C.I.颜料黄10、C.I.颜料黄11、C.I.颜料黄12、C.I.颜料黄13、C.I.颜料黄14、C.I.颜料黄15、C.I.颜料黄16、C.I.颜料黄17、C.I.颜料黄23、C.I.颜料黄24、C.I.颜料黄34、C.I.颜料黄35、C.I.颜料黄37、C.I.颜料黄42、C.I.颜料黄53、C.I.颜料黄55、C.I.颜料黄65、C.I.颜料黄73、C.I.颜料黄74、C.I.颜料黄75、C.I.颜料黄81、C.I.颜料黄83、C.I.颜料黄93、C.I.颜料黄94、C.I.颜料黄95、C.I.颜料黄97、C.I.颜料黄98、C.I.颜料黄100、C.I.颜料黄101、C.I.颜料黄104、C.I.颜料黄108、C.I.颜料黄109、C.I.颜料黄110、C.I.颜料黄113、C.I.颜料黄114、C.I.颜料黄116、C.I.颜料黄117、C.I.颜料黄120、C.I.颜料黄128、C.I.颜料黄129、C.I.颜料黄133、C.I.颜料黄138、C.I.颜料黄139、C.I.颜料黄147、C.I.颜料黄150、C.I.颜料黄151、C.I.颜料黄153、C.I.颜料黄154、C.I.颜料黄155、C.I.颜料黄156、C.I.颜料黄167、C.I.颜料黄172、C.I.颜料黄173、C.I.颜料黄180、C.I.颜料黄185、C.I.颜料黄195;C.I.还原黄1、C.I.还原黄3、C.I.还原黄20等黄系颜料等。
水青系色材、洋红系色材、黄系色材等各种色材可以分别单独地使用,或者组合使用2种以上。而且,在使用2种以上的水青系色材、洋红系色材、黄系色材等各种色材的情况下,作为这些色材的混合比例(或配合比例),没有特别限制,可以与各色材的种类或所需的颜色等对应地适当地选择。
作为密封用片10的基于可见光(波长:380nm~800nm)的光线透射率(可见光透射率),没有特别限制,然而例如优选为20%~0%的范围,更优选为10%~0%,特别优选为5%~0%。通过将密封用片10的可见光透射率设为20%以下,可以使打印可见性良好。另外还可以防止由光线通过造成的对半导体元件的不良影响。
密封用片10的可见光线透射率(%)可以如下算出,即,制作厚度(平均厚度)为10μm的密封用片10,对该密封用片10(厚度:10μm)使用商品名“UV-2550”(岛津制作所制)以给定的强度照射波长为380nm~800nm的可见光线。测定因该照射而透过密封用片10的可见光线的光强度,利用下式算出。
可见光线透射率(%)=((透过密封用片10后的可见光线的光强度)/(可见光线的初始的光强度))×100
而且,光线透射率(%)的所述算出方法也可以适用于厚度并非10μm的密封用片10的光线透射率(%)的算出。具体而言,可以利用郎伯比尔定律,如下所示地算出10μm时的吸光度A10。
A10=α×L10×C(1)
式中,L10表示光路长,α表示吸光系数,C表示试样浓度。
另外,厚度X(μm)时的吸光度AX可以利用下述式(2)表示。
AX=α×LX×C(2)
此外,厚度20μm时的吸光度A20可以利用下述式(3)表示。
A10=-log10T10(3)
式中,T10表示厚度10μm时的光线透射率。
根据所述式(1)~(3),吸光度AX可以表示为:
AX=A10×(LX/L10)
=-[log10(T10)]×(LX/L10)
由此,厚度X(μm)时的光线透射率TX(%)可以利用下述算出。
TX=10-AX
其中,AX=-[log10(T10)]×(LX/L10)
本实施方式中,求密封用片的光线透射率(%)时的密封用片的厚度(平均厚度)为10μm,然而该密封用片的厚度终究是求密封用片的光线透射率(%)时的厚度,而并不意味着本发明的密封用片为10μm。
密封用片10的光线透射率(%)可以利用树脂成分的种类或其含量、着色剂(颜料、染料等)的种类或其含量、填充材料的种类或其含量等来控制。
而且,在密封用片10中,在上述的各成分以外还可以根据需要适当地配合其他的添加剂。
密封用片10的厚度没有特别限定,然而从作为密封用片使用的观点考虑,例如为50μm~2000μm。
密封用片10的制造方法没有特别限定,然而优选制备用于形成密封用片10的树脂组合物的混炼物、并涂布所得的混炼物的方法;将所得的混炼物塑性加工为片状的方法。由此,就可以不使用溶剂地制作密封用片10,因此可以抑制半导体芯片23因挥发的溶剂而受到影响的情况。
具体而言,通过将后述的各成分用混合辊、加压式捏合机、挤出机等公知的混炼机熔融混炼而制备混炼物,并将所得的混炼物利用涂布或塑性加工制成片状。作为混炼条件,温度优选为上述的各成分的软化点以上,例如为30~150℃,如果考虑环氧树脂的热固性,则优选为40~140℃,更优选为60~120℃。时间例如为1~30分钟,优选为5~15分钟。
混炼优选在减压条件下(减压气氛下)进行。由此,就可以进行脱气,同时可以防止气体向混炼物中的侵入。减压条件下的压力优选为0.1kg/cm2以下,更优选为0.05kg/cm2以下。减压下的压力的下限没有特别限定,然而例如为1×10-4kg/cm2以上。
在涂布混炼物而形成密封用片10的情况下,熔融混炼后的混炼物优选不进行冷却而保持高温状态不变地涂布。作为涂布方法没有特别限制,可以举出棒涂法、刮涂法、狭缝式挤压涂布法等。作为涂布时的温度,优选为上述的各成分的软化点以上,如果考虑环氧树脂的热固性及成型性,则例如为40~150℃,优选为50~140℃,更优选为70~120℃。
在对混炼物进行塑性加工而形成密封用片10的情况下,熔融混炼后的混炼物优选不进行冷却而保持高温状态不变地进行塑性加工。作为塑性加工方法没有特别限制,可以举出平板压制法、T型模头挤出法、螺杆模头挤出法、辊压延法、辊混炼法、吹塑挤出法、共挤出法、压延成型法等等。作为塑性加工温度优选为上述的各成分的软化点以上,如果考虑环氧树脂的热固性及成型性,则例如为40~150℃,优选为50~140℃,更优选为70~120℃。
而且,密封用片10也可以如下得到,即,向适当的溶剂中溶解用于形成密封用片10的树脂等,使之分散而制备清漆,将该清漆涂布在剥离片上而得到。
[配置密封用片和层叠体的工序]
在准备密封用片的工序后,如图3所示,在下侧加热板32上使安装有半导体芯片23的面朝上地配置层叠体20,并且在层叠体20的安装有半导体芯片23的面上配置密封用片10。在该工序中,既可以在下侧加热板32上先配置层叠体20,其后,在层叠体20上配置密封用片10,也可以在层叠体20上先层叠密封用片10,其后,将层叠层叠体20和密封用片10而得的层叠物配置于下侧加热板32上。
[形成密封体的工序]
然后,如图4所示,利用下侧加热板32和上侧加热板34进行热压,将半导体芯片23填埋在密封用片10中(工序B)。密封用片10作为用于保护半导体芯片23及其中附带的要素免受外部环境影响的密封树脂发挥作用。由此,就可以得到将安装于半导体晶片22上的半导体芯片23填埋在密封用片10中的密封体28。
作为将半导体芯片23填埋在密封用片10中时的热压条件,温度例如为40~100℃,优选为50~90℃,压力例如为0.1~10MPa,优选为0.5~8MPa,时间例如为0.3~10分钟,优选为0.5~5分钟。由此,就可以得到将半导体芯片23填埋在密封用片10中的半导体装置。另外,如果考虑密封用片10与半导体芯片23及半导体晶片22的密合性及追随性的提高,优选在减压条件下进行压制。
作为所述减压条件,压力例如为0.1~5kPa,优选为0.1~100Pa,减压保持时间(从减压开始到压制开始的时间)例如为5~600秒,优选为10~300秒。
[剥离衬垫剥离工序]
然后,将剥离衬垫11剥离(参照图5)。此时,由于密封用片10的所述表面固有电阻值为1.0×1012Ω以下,因此难以带电。因而,可以进一步发挥防静电效果。其结果是,可以防止半导体芯片23因该剥离带电而被破坏,提高使用密封用片10制造的半导体装置29(参照图11)的可靠性。
[热固化工序]
然后,将密封用片10热固化。具体而言,例如,对将安装于半导体晶片22上的半导体芯片23填埋在密封用片10中的密封体28整体进行加热。
作为热固化处理的条件,加热温度优选为100℃以上,更优选为120℃以上。另一方面,加热温度的上限优选为200℃以下,更优选为180℃以下。加热时间优选为10分钟以上,更优选为30分钟以上。另一方面,加热时间的上限优选为180分钟以下,更优选为120分钟以下。另外,根据需要也可以进行加压,优选为0.1MPa以上,更优选为0.5MPa以上。另一方面,上限优选为10MPa以下,更优选为5MPa以下。
[激光标记工序1(密封用片磨削前的激光标记工序)]
然后,如图6所示,使用激光标记用的激光器36,对密封用片10进行激光标记。作为激光标记的条件没有特别限定,然而优选在强度为0.3W~2.0W的条件下向密封用片10照射激光[波长:532nm]。另外,优选以使此时的加工深度(深度)为2μm以上的方式进行照射。所述加工深度的上限没有特别限制,然而例如可以从2μm~25μm的范围中选择,优选为3μm以上(3μm~20μm),更优选为5μm以上(5μm~15μm)。通过将激光标记的条件设为所述数值范围内,就可以发挥优异的激光标记性。
而且,密封用片10的激光加工性可以利用构成树脂成分的种类或其含量、着色剂的种类或其含量、交联剂的种类或其含量、填充材料的种类或其含量等来控制。
在所述激光标记工序1中,作为密封用片10的进行激光标记的部位,没有特别限定,既可以是半导体芯片23的正上方,也可以是没有配置半导体芯片23的部位的上侧(例如密封用片10的外周部分)。另外,作为利用激光标记进行标记的信息,既可以是用于能够基于密封体单元进行区别的文字信息或图形信息等,也可以是用于能够在同一个密封体28内使半导体装置彼此区别的文字信息或图形信息等。由此,就可以使下一个工序、即密封用片10被磨削之前的期间的、密封体28或密封体28内的多个半导体芯片23(半导体装置)具有相互识别性。
[磨削密封用片的工序]
然后,如图7所示,磨削密封体28的密封用片10而使半导体芯片23的背面23c露出(工序C)。作为磨削密封用片10的方法,没有特别限定,例如可以举出使用高速旋转的砂轮的磨片法。而且,对于利用激光标记工序1附加的标记,在工序C中磨削的厚度大于标记深度(加工深度)的情况下,标记会消失。另一方面,在工序C中磨削的厚度小于标记深度(加工深度)的情况下,标记就被残留下来。
[激光标记工序2(密封用片磨削后的激光标记工序)]
然后,如图8所示,使用激光标记用的激光器38,对密封用片10进行激光标记。作为激光标记的条件没有特别限定,然而优选在强度为0.3W~2.0W的条件下对密封用片10照射激光[波长:532nm]。另外,优选以使此时的加工深度(深度)为2μm以上的方式进行照射。所述加工深度的上限没有特别限制,然而例如可以从2μm~25μm的范围中选择,优选为3μm以上(3μm~20μm),更优选为5μm以上(5μm~15μm)。通过将激光标记的条件设为所述数值范围内,就可以发挥优异的激光标记性。
在所述激光标记工序2中,作为密封用片10的进行激光标记的部位没有特别限定,然而可以设为没有配置半导体芯片23的部位的上侧。另外,作为利用激光标记进行标记的信息,既可以是用于能够基于密封体单元进行区别的文字信息或图形信息等,也可以是用于能够在同一个密封体28内使半导体装置彼此区别的文字信息或图形信息等。由此,就可以使密封用片10被磨削后的密封体28、半导体装置具有相互识别性。特别是,即使进行了激光标记工序1,也有因所述工序E中的磨削而使标记消失的情况。然而,如果在所述激光标记工序2中,对密封用片10进行激光标记,则即使在密封用片10被磨削后,也可以再次使密封体28、半导体装置具有相互识别性。另外,作为利用激光标记进行标记的信息,也可以是在后述的切割工序中能够使用的对位用的图形信息(对准标记)。
[形成布线层的工序]
然后,磨削半导体晶片22的与搭载有半导体芯片23的一侧相反一侧的面,形成通孔(Via)22c后(参照图9),形成具有布线27a的布线层27(参照图10)。作为磨削半导体晶片22的方法,没有特别限定,例如可以举出使用高速旋转的砂轮的磨片法。也可以在布线层27中形成从布线27a中突出的凸块27b。作为形成布线层27的方法,可以使用半加成法、减成法等以往公知的电路基板或中介片(interposer)的制造技术,因此省略此处的详细的说明。
[切割工序]
接下来,如图11所示,对露出了半导体芯片23的背面23c的密封体28进行切割。由此,就可以得到基于半导体芯片23单元的半导体装置29。
[基板安装工序]
根据需要,可以进行将半导体装置29安装于另外的基板(未图示)上的基板安装工序。在半导体装置29在所述另外的基板上的安装时,可以使用倒装片接合机、芯片接合机等公知的装置。
以上,根据第一实施方式的半导体装置的制造方法,由于密封用片10的任意一个表面的表面固有电阻值为1.0×1012Ω以下,因此可以发挥防静电效果。其结果是,可以防止半导体芯片23因将贴合在密封用片10上的剥离用片11剥离时产生的剥离带电而被破坏,提高使用密封用片10制造的半导体装置29的可靠性。
上述的第一实施方式中,对在热固化工序前将剥离衬垫11剥离的情况进行了说明,然而也可以在热固化工序后剥离。
[第二实施方式]
第二实施方式的半导体装置的制造方法至少具备:
工序A,在临时固定材料上临时固定半导体芯片;
工序B,将临时固定在所述临时固定材料上的所述半导体芯片填埋在密封用片中而形成密封体,
所述密封用片的任意一个表面的表面固有电阻值为1.0×1012Ω以下。
即,第二实施方式中,对本发明的“支撑体”为“临时固定材料”的情况进行说明。第二实施方式是被称作所谓的Fan-out(扇出)型晶片级封装体(WLP)的半导体装置的制造方法。
图13~图20是用于说明第二实施方式的半导体装置的制造方法的剖面示意图。第一实施方式中,将倒装芯片式接合在半导体晶片上的半导体芯片用密封用片进行了树脂密封,然而第二实施方式中,在将半导体芯片临时固定在临时固定材料上而不是半导体晶片上的状态下进行树脂密封。
[层叠体准备工序]
如图13所示,第二实施方式的半导体装置的制造方法中,首先,准备具有电路形成面53a的1个或多个半导体芯片53、和临时固定材料60。第二实施方式中,临时固定材料60相当于本发明的“支撑体”。层叠体50例如可以如下所示地获得。
<临时固定材料准备工序>
临时固定材料准备工序中,准备在支撑基材60b上层叠有热膨胀性粘合剂层60a的临时固定材料60(参照图13)。而且,也可以取代热膨胀性粘合剂层,而使用辐射线固化型粘合剂层。本实施方式中,对具备热膨胀性粘合剂层的临时固定材料60进行说明。
(热膨胀性粘合剂层)
热膨胀性粘合剂层60a可以利用含有聚合物成分和发泡剂的粘合剂组合物形成。作为聚合物成分(特别是基质聚合物),可以合适地使用丙烯酸系聚合物(有时称作“丙烯酸类聚合物A”)。作为丙烯酸类聚合物A,可以举出将(甲基)丙烯酸酯作为主单体成分使用的聚合物。作为所述(甲基)丙烯酸酯,例如可以举出(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳原子数1~30、特别是碳原子数4~18的直链状或支链状的烷基酯等)及(甲基)丙烯酸环烷基酯(例如环戊酯、环己酯等)等。这些(甲基)丙烯酸酯可以单独使用,或者并用2种以上。
而且,所述丙烯酸类聚合物A也可以以凝聚力、耐热性、交联性等的改性为目的,根据需要,含有与能够与所述(甲基)丙烯酸酯共聚的其他单体成分对应的单元。作为此种单体成分,例如可以举出丙烯酸、甲基丙烯酸、衣康酸、马来酸、富马酸、巴豆酸、羧基乙基丙烯酸酯等含有羧基的单体;马来酸酐、衣康酸酐等含有酸酐基的单体;(甲基)丙烯酸羟基乙酯、(甲基)丙烯酸羟基丙酯、(甲基)丙烯酸羟基丁酯等含有羟基的单体;(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺等(N-取代或未取代)酰胺系单体;乙酸乙烯酯、丙酸乙烯酯等乙烯基酯系单体;苯乙烯、α-甲基苯乙烯等苯乙烯系单体;乙烯基甲基醚、乙烯基乙基醚等乙烯基醚系单体;丙烯腈、甲基丙烯腈等氰基丙烯酸酯系单体;(甲基)丙烯酸缩水甘油酯等含有环氧基的丙烯酸系单体;乙烯、丙烯、异戊二烯、丁二烯、异丁烯等烯烃或二烯系单体;(甲基)丙烯酸氨基乙基、(甲基)丙烯酸N,N-二甲基氨基乙基、(甲基)丙烯酸叔丁基氨基乙酯等含有(取代或未取代)氨基的单体;(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系单体;N-乙烯基吡咯烷酮、N-甲基乙烯基吡咯烷酮、N-乙烯基吡啶、N-乙烯基哌啶酮、N-乙烯基嘧啶、N-乙烯基哌嗪、N-乙烯基吡嗪、N-乙烯基吡咯、N-乙烯基咪唑、N-乙烯基噁唑、N-乙烯基吗啉、N-乙烯基己内酰胺等具有含有氮原子的环的单体;N-乙烯基羧酸酰胺类;苯乙烯磺酸、烯丙基磺酸、(甲基)丙烯酰胺丙烷磺酸、(甲基)丙烯酸磺基丙基酯等含有磺酸基的单体;2-羟基乙基丙烯酰基磷酸酯等含有磷酸基的单体;N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺等马来酰亚胺系单体;N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺等衣康酰亚胺系单体;N-(甲基)丙烯酰氧基亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧基六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧基八亚甲基琥珀酰亚胺等琥珀酰亚胺系单体;(甲基)丙烯酸聚乙二醇、(甲基)丙烯酸聚丙二醇等乙二醇系丙烯酸酯单体;(甲基)丙烯酸四氢糠基酯等具有含有氧原子的杂环的单体;氟系(甲基)丙烯酸酯等含有氟原子的丙烯酸酯系单体;硅酮系(甲基)丙烯酸酯等含有硅原子的丙烯酸酯系单体;己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧丙烯酸酯、聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯、二乙烯基苯、丁二醇二(甲基)丙烯酸酯、己二醇二(甲基)丙烯酸酯等多官能单体等。
所述丙烯酸类聚合物A可以通过对单一单体或2种以上的单体混合物实施聚合而得到。聚合可以利用溶液聚合(例如自由基聚合、阴离子聚合、阳离子聚合等)、乳液聚合、整体聚合、悬浮聚合、光聚合(例如紫外线(UV)聚合等)等任意一种方式来进行。
丙烯酸类聚合物A的重均分子量没有特别限制,然而优选为35万~100万,更优选为45万~80万左右。
另外,在热膨胀性粘合剂中,为了调整粘合力,也可以适当地使用外部交联剂。作为外部交联方法的具体方法,可以举出添加聚异氰酸酯化合物、环氧化合物、氮丙啶化合物、蜜胺系交联剂等所谓的交联剂并使之反应的方法。在使用外部交联剂的情况下,其使用量可以根据与应当交联的基质聚合物的平衡,而且根据作为粘合剂的使用用途适当地决定。外部交联剂的使用量一般而言相对于所述基质聚合物100重量份为20重量份以下(优选为0.1重量份~10重量份)。
热膨胀性粘合剂层60a如前所述,含有用于赋予热膨胀性的发泡剂。由此,通过在临时固定材料60的热膨胀性粘合剂层60a上形成有密封体58的状态下(参照图16),在任意的时刻将临时固定材料60至少部分地加热,使该被加热了的热膨胀性粘合剂层60a的部分中所含有的发泡剂发泡和/或膨胀,而使热膨胀性粘合剂层60a至少部分地膨胀,由于该热膨胀性粘合剂层60a的至少部分的膨胀,与该膨胀了的部分对应的粘合面(与密封体58的界面)变形为凹凸状,该热膨胀性粘合剂层60a与密封体58的粘接面积减少,由此,两者间的粘接力减少,从而可以使密封体58从临时固定材料60剥离(参照图17)。
(发泡剂)
作为热膨胀性粘合剂层60a中所用的发泡剂,没有特别限制,可以从公知的发泡剂中适当地选择。发泡剂可以单独使用,或者组合使用2种以上。作为发泡剂,可以合适地使用热膨胀性微小球。
(热膨胀性微小球)
作为热膨胀性微小球,没有特别限制,可以从公知的热膨胀性微小球(各种无机系热膨胀性微小球、有机系热膨胀性微小球等)中适当地选择。作为热膨胀性微小球,从易于混合操作等观点考虑,可以合适地使用被微胶囊化了的发泡剂。作为此种热膨胀性微小球,例如可以举出将异丁烷、丙烷、戊烷等容易因加热而气化膨胀的物质内包于具有弹性的壳内的微小球等。所述壳多由热熔融性物质或因热膨胀而破坏的物质形成。作为形成所述壳的物质,例如可以举出偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇缩丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯、聚砜等。
热膨胀性微小球可以利用惯用的方法、例如凝聚法、界面聚合法等制造。而且,作为热膨胀性微小球,例如可以使用松本油脂制药株式会社制的商品名“MatsumotoMicrosphere”的系列(例如商品名“MatsumotoMicrosphereF30”、商品名“MatsumotoMicrosphereF301D”、商品名“MatsumotoMicrosphereF50D”、商品名“MatsumotoMicrosphereF501D”、商品名“MatsumotoMicrosphereF80SD”、商品名“MatsumotoMicrosphereF80VSD”等),此外还可以使用EXPANCEL公司制的商品名“051DU”、商品名“053DU”、商品名“551DU”、商品名“551-20DU”、商品名“551-80DU”等市售品。
而且,在作为发泡剂使用了热膨胀性微小球的情况下,作为该热膨胀性微小球的粒子直径(平均粒子直径),可以根据热膨胀性粘合剂层的厚度等适当地选择。作为热膨胀性微小球的平均粒子直径,例如可以从100μm以下(优选为80μm以下,更优选为1μm~50μm,特别优选为1μm~30μm)的范围中选择。而且,热膨胀性微小球的粒子直径的调整既可以在热膨胀性微小球的生成过程中进行,也可以在生成后利用分级等方法进行。作为热膨胀性微小球,优选将粒子直径统一。
(其他发泡剂)
本实施方式中,作为发泡剂,也可以使用热膨胀性微小球以外的发泡剂。作为此种发泡剂,可以适当地选择使用各种无机系发泡、有机系发泡剂等各种发泡剂。作为无机系发泡剂的代表的例子,例如可以举出碳酸铵、碳酸氢铵、碳酸氢钠、亚硝酸铵、硼氢化钠、各种叠氮化物类等。
另外,作为有机系发泡剂的代表的例子,例如可以举出水;三氯单氟甲烷、二氯单氟甲烷等氯氟化链烷烃系化合物;偶氮二异丁腈、偶氮二甲酰胺、偶氮二羧酸钡等偶氮系化合物;对甲苯磺酰肼、二苯基砜-3,3′-二磺酰基肼、4,4′-氧代双(苯磺酰肼)、烯丙基双(磺酰肼)等肼系化合物;对甲苯磺酰氨基脲、4,4′-氧代双(苯磺酰氨基脲)等氨基脲系化合物;5-吗啉代-1,2,3,4-噻***等***系化合物;N,N′-二亚硝基五亚甲基四胺、N,N′-二甲基-N,N′-二亚硝基对苯二甲酰胺等N-亚硝基系化合物等。
本实施方式中,由于利用加热处理,会使热膨胀性粘合剂层的粘接力有效并且稳定地降低,因此优选具有直到体积膨胀率为5倍以上、优选为7倍以上、特别优选为10倍以上之前不会破裂的适度的强度的发泡剂。
发泡剂(热膨胀性微小球等)的配合量可以根据热膨胀性粘合剂层的膨胀倍率、粘接力的降低性等适当地设定,然而一般相对于形成热膨胀性粘合剂层的基质聚合物100重量份,例如为1重量份~150重量份(优选为10重量份~130重量份,更优选为25重量份~100重量份)。
本实施方式中,作为发泡剂,可以合适地使用发泡开始温度(热膨胀开始温度)(T0)为80℃~210℃的范围的发泡剂,优选具有90℃~200℃(更优选为95℃~200℃,特别优选为100℃~170℃)的发泡开始温度。如果发泡剂的发泡开始温度低于80℃,就会有因密封体的制造时或使用时的热而使发泡剂发泡的情况,处置性、生产率降低。另一方面,在发泡剂的发泡开始温度大于210℃的情况下,对于临时固定材料的支撑基材或密封树脂而言需要有过度的耐热性,在处置性、生产率或成本方面不够理想。而且,发泡剂的发泡开始温度(T0)相当于热膨胀性粘合剂层的发泡开始温度(T0)。
而且,作为使发泡剂发泡的方法(即,使热膨胀性粘合剂层热膨胀的方法),可以从公知的加热发泡方法中适当地选择采用。
本实施方式中,对于热膨胀性粘合剂层,从加热处理前的适度的粘接力与加热处理后的粘接力的降低性的平衡的方面考虑,不含有发泡剂的形态下的弹性模量在23℃~150℃优选为5×104Pa~1×106Pa,更优选为5×104Pa~8×105Pa,特别优选为5×104Pa~5×105Pa。如果热膨胀性粘合剂层的不含有发泡剂的形态下的弹性模量(温度:23℃~150℃)小于5×104Pa,则热膨胀性差,会有剥离性降低的情况。另外,在热膨胀性粘合剂层的不含有发泡剂的形态下的弹性模量(温度:23℃~150℃)大于1×106Pa时,会有初期粘接性差的情况。
而且,不含有发泡剂的形态的热膨胀性粘合剂层相当于由粘合剂(不含有发泡剂)形成的粘合剂层。因而,热膨胀性粘合剂层的不含有发泡剂的形态下的弹性模量可以使用粘合剂(不含有发泡剂)测定。而且,热膨胀性粘合剂层可以利用含有能够形成23℃~150℃的弹性模量为5×104Pa~1×106Pa的粘合剂层的粘合剂、和发泡剂的热膨胀性粘合剂形成。
热膨胀性粘合剂层的不含有发泡剂的形态下的弹性模量采用如下的值,即,制作没有添加发泡剂的形态的热膨胀性粘合剂层(即,借助不含有发泡剂的粘合剂的粘合剂层)(样品),使用Rheometric公司制动态粘弹性测定装置“ARES”,样品厚度约为1.5mm,使用φ7.9mm平行板的夹具,利用剪切模式,以频率:1Hz、升温速度:5℃/分钟、应变:0.1%(23℃)、0.3%(150℃)进行测定,采用在23℃及150℃得到的剪切储能模量G′的值。
热膨胀性粘合剂层的弹性模量可以通过调节粘合剂的基质聚合物的种类、交联剂、添加剂等来控制。
热膨胀性粘合剂层的厚度没有特别限制,可以根据粘接力的降低性等适当地选择,例如为5μm~300μm(优选为20μm~150μm)左右。然而,在作为发泡剂使用热膨胀性微小球的情况下,热膨胀性粘合剂层的厚度优选大于所含的热膨胀性微小球的最大粒子直径。如果热膨胀性粘合剂层的厚度过薄,则会因热膨胀性微小球的凹凸而损害表面平滑性,降低加热前(未发泡状态)的粘接性。另外,由加热处理造成的热膨胀性粘合剂层的变形度小,粘接力难以顺畅地降低。另一方面,如果热膨胀性粘合剂层的厚度过厚,则在由加热处理造成的膨胀或发泡后,容易在热膨胀性粘合剂层中产生凝聚破坏,会有在密封体58产生残胶的情况。
而且,热膨胀性粘合剂层可以是单层、多层的任意一种。
本实施方式中,也可以在热膨胀性粘合剂层中,含有各种添加剂(例如着色剂、增稠剂、增添剂、填充剂、增粘剂、增塑剂、抗老化剂、抗氧剂、表面活性剂、交联剂等)。
(支撑基材)
支撑基材60b是成为临时固定材料60的强度母体的薄板状构件。作为支撑基材60b的材料,只要考虑处置性、耐热性等适当地选择即可,例如可以使用SUS等金属材料、聚酰亚胺、聚酰胺酰亚胺、聚醚醚酮、聚醚砜等塑料材料、玻璃或硅晶片等。它们当中,从耐热性或强度、可再利用性等观点考虑,优选SUS板。
支撑基材60b的厚度可以考虑所需的强度、处置性适当地选择,优选为100~5000μm,更优选为300~2000μm。
(临时固定材料的形成方法)
临时固定材料60可以通过在支撑基材60b上形成热膨胀性粘合剂层60a而得到。热膨胀性粘合剂层例如可以利用将粘合剂、发泡剂(热膨胀性微小球等)、和根据需要使用的溶剂或其他添加剂等混合、并制成片状的层的惯用的方法来形成。具体而言,例如可以利用将含有粘合剂、发泡剂(热膨胀性微小球等)、以及根据需要使用的溶剂或其他添加剂的混合物涂布在支撑基材60b上的方法;在适当的隔膜(剥离紙等)上涂布所述混合物而形成热膨胀性粘合剂层、并将其转印(移送)到支撑基材60b上的方法等,来形成热膨胀性粘合剂层。
(热膨胀性粘合剂层的热膨胀方法)
本实施方式中,可以利用加热使热膨胀性粘合剂层热膨胀。作为加热处理方法,例如可以利用加热平板、热风干燥机、近红外线灯、空气干燥器等恰当的加热工具来进行。加热处理时的加热温度只要是热膨胀性粘合剂层中的发泡剂(热膨胀性微小球等)的发泡开始温度(热膨胀开始温度)以上即可,然而加热处理的条件可以根据由发泡剂(热膨胀性微小球等)的种类等造成的粘接面积的减少性、包含支撑基材、半导体芯片的密封体等的耐热性、加热方法(热容量、加热工具等)等适当地设定。作为一般的加热处理条件,是温度100℃~250℃、1秒~90秒(加热平板等)或5分钟~15分钟(热风干燥机等)。而且,加热处理可以根据使用目的在恰当的阶段进行。另外,作为加热处理时的热源,有时也使用红外线灯、加热水。
(中间层)
本实施方式中,也可以在热膨胀性粘合剂层60a与支撑基材60b之间,设置以提高密合力、提高加热后的剥离性等为目的的中间层(未图示)。其中,作为中间层优选设置橡胶状有机弹性中间层。通过像这样设置橡胶状有机弹性中间层,就可以在将半导体芯片53与临时固定材料60粘接时(参照图13),使热膨胀性粘合剂层60a的表面良好地追随半导体芯片53的表面形状,增大粘接面积,并且在从临时固定材料60将密封体58加热剥离时,可以高度地(精度良好地)控制热膨胀性粘合剂层60a的加热膨胀,使热膨胀性粘合剂层60a在厚度方向上优先地并且均匀地膨胀。
而且,可以使橡胶状有机弹性中间层夹设于支撑基材60b的一面或两面。
橡胶状有机弹性中间层例如优选利用基于ASTMD-2240的D型肖氏D型硬度为50以下、特别是40以下的天然橡胶、合成橡胶或具有橡胶弹性的合成树脂形成。而且,即使像聚氯乙烯等那样在本质上为硬质系聚合物,也可以利用与增塑剂或柔软剂等配合剂的组合来体现出橡胶弹性。此种组合物也可以作为所述橡胶状有机弹性中间层的构成材料使用。
橡胶状有机弹性中间层例如可以利用将含有所述天然橡胶、合成橡胶或具有橡胶弹性的合成树脂等橡胶状有机弹性层形成材料的涂布液涂布在基材上的方式(涂布法);将由所述橡胶状有机弹性层形成材料构成的膜、或预先在1层以上的热膨胀性粘合剂层上形成了由所述橡胶状有机弹性层形成材料构成的层的层叠膜与基材粘接的方式(干式层压法);将含有基材的构成材料的树脂组合物与含有所述橡胶状有机弹性层形成材料的树脂组合物共挤出的方式(共挤出法)等形成方法来形成。
而且,橡胶状有机弹性中间层既可以由以天然橡胶、合成橡胶或具有橡胶弹性的合成树脂作为主成分的粘合性物质形成,也可以由以该成分作为主体的发泡膜等形成。发泡可以利用惯用的方法来进行,例如可以利用借助机械搅拌的方法、利用反应生成气体的方法、使用发泡剂的方法、除去可溶性物质的方法、借助喷雾的方法、形成复合泡沫塑料的方法、烧结法等来进行。
橡胶状有机弹性中间层等中间层的厚度例如为5μm~300μm,优选为20μm~150μm左右。而且,在中间层例如为橡胶状有机弹性中间层的情况下,如果橡胶状有机弹性中间层的厚度过薄,则无法形成加热发泡后的三维的结构变化,会有剥离性恶化的情况。
橡胶状有机弹性中间层等中间层既可以是单层,也可以由2以上的层构成。
而且,在中间层中,也可以在不损害临时固定材料的作用效果的范围中,含有各种添加剂(例如着色剂、增粘剂、增添剂、填充剂、增稠剂、增塑剂、抗老化剂、抗氧剂、表面活性剂、交联剂等)。
<半导体芯片临时固定工序>
如图13所示,在半导体芯片临时固定工序中,在上述临时固定材料60上将多个半导体芯片53以使其电路形成面53a与临时固定材料60相面对的方式配置、临时固定(工序A)。在半导体芯片53的临时固定中,可以使用倒装片接合机、芯片接合机等公知的装置。
半导体芯片53的配置的布局、配置数目可以根据临时固定材料60的形状或尺寸、所需的封装体的生产数等适当地设定,例如可以使之整齐排列为多行并且多列的矩阵状地配置。以上,表示出层叠体准备工序的一例。
[准备密封用片的工序]
另外,第二实施方式的半导体装置的制造方法中,如图14所示,准备密封用片40。密封用片40通常是以层叠在聚对苯二甲酸乙二醇酯(PET)膜等剥离衬垫41上的状态准备。该情况下,为了容易进行密封用片40的剥离,也可以对剥离衬垫41实施脱模处理。
(密封用片)
密封用片40的任意一个表面的表面固有电阻值为1.0×1012Ω以下。密封用片40的材质、物性等可以设为与密封用片10相同。另外,剥离衬垫41的材质、物性等可以设为与剥离衬垫11相同。因而,省略此处的说明。
[配置密封用片和层叠体的工序]
在准备密封用片的工序后,如图14所示,在下侧加热板62上使临时固定有半导体芯片53的面朝上地配置层叠体50,并且在层叠体50的临时固定有半导体芯片53的面上配置密封用片40。如图14所示,密封用片40被以使与临时固定材料60相面对的面的相反一侧的面为硬质层42的方式配置。在该工序中,既可以在下侧加热板62上先配置层叠体50,其后,在层叠体50上配置密封用片40,也可以在层叠体50上先层叠密封用片40,其后,将层叠层叠体50和密封用片40而得的层叠物配置于下侧加热板62上。
[形成密封体的工序]
然后,如图15所示,利用下侧加热板62和上侧加热板64进行热压,将半导体芯片53填埋在密封用片40的填埋用树脂层44中,形成将半导体芯片53填埋在密封用片40中的密封体58(工序B)。
作为将半导体芯片53填埋在密封用片40中时的热压条件,可以设为与第一实施方式相同。
[剥离衬垫剥离工序]
然后,将剥离衬垫41剥离(参照图16)。此时,由于密封用片40的所述表面固有电阻值为1.0×1012Ω以下,因此难以带电。因而,可以进一步发挥防静电效果。其结果是,可以防止半导体芯片53因该剥离带电而被破坏,提高使用密封用片40制造的半导体装置59(参照图20)的可靠性。
[热固化工序]
然后,使密封用片40热固化。特别是,使构成密封用片40的填埋用树脂层44热固化。具体而言,例如对将临时固定在临时固定材料60上的半导体芯片53填埋在密封用片40中的密封体58整体进行加热。
作为热固化处理的条件,可以设为与第一实施方式相同。
[热膨胀性粘合剂层剥离工序]
然后,如图17所示,通过加热临时固定材料60来使热膨胀性粘合剂层60a热膨胀,而在热膨胀性粘合剂层60a与密封体58之间进行剥离。或者也可以合适地采用如下的步骤,即,在支撑基材60b与热膨胀性粘合剂层60a的界面进行剥离,其后,在热膨胀性粘合剂层60a与密封体58的界面进行借助热膨胀的剥离。在任意一种情况下,都可以通过加热热膨胀性粘合剂层60a使之热膨胀、降低其粘合力,而容易地进行热膨胀性粘合剂层60a与密封体58的界面处的剥离。作为热膨胀的条件,可以合适地采用上述的“热膨胀性粘合剂层的热膨胀方法”一栏中的条件。特别是,热膨胀性粘合剂层优选为在所述热固化工序的加热中不会剥离、而是在该热膨胀性粘合剂层剥离工序的加热中剥离的构成。
[磨削密封用片的工序]
然后,如图18所示,磨削密封体58的密封用片40而使半导体芯片53的背面53c露出(工序C)。作为磨削密封用片40的方法,没有特别限定,例如可以举出使用高速旋转的砂轮的磨片法。
(再布线形成工序)
本实施方式中,优选还包含在密封体58的半导体芯片53的电路形成面53a上形成再布线69的再布线形成工序。在再布线形成工序中,在上述热膨胀性粘合剂层60a的剥离后,在密封体58上形成与上述露出的半导体芯片53连接的再布线69(参照图19)。
作为再布线的形成方法,例如可以利用真空成膜法等公知的方法在露出的半导体芯片53上形成金属种子层,利用半加成法等公知的方法,形成再布线69。
此后,也可以在再布线69及密封体58上形成聚酰亚胺、PBO等绝缘层。
(凸块形成工序)
然后,也可以进行在已经形成的再布线69上形成凸块67的凸块加工(参照图19)。凸块加工可以利用焊料球或焊料镀敷等公知的方法进行。凸块67的材质可以合适地使用与第一实施方式相同的材质。
(切割工序)
最后,进行由半导体芯片53、密封用片21及再布线69等要素构成的层叠体的切割(参照图20)。由此,就可以得到向芯片区域的外侧引出了布线的半导体装置59。切割方法可以采用与第一实施方式相同的方法。以上,对第二实施方式进行了说明。
本发明并不限定于上述的第一实施方式、以及第二实施方式,只要进行所述工序A、以及所述工序B即可,除此以外的工序是任意的,既可以进行也可以不进行。
上述的实施方式中,对使用密封用片将倒装芯片式接合在半导体晶片上的半导体芯片填埋的情况(第一实施方式)、以及将临时固定在临时固定材料上的半导体芯片填埋的情况(第二实施方式)进行了说明。然而,本发明的密封用片只要是被用于通过填埋半导体芯片来制造半导体装置的方法中,就不限定于该例。例如可以用于通过将倒装芯片式接合或芯片接合在各种基板(例如引线框、布线电路板等)上的半导体芯片填埋来制造半导体装置的情况。
[实施例]
以下,使用实施例对本发明进行详细说明,然而本发明只要不超出其主旨,就不受以下的实施例限定。另外,各例中,份只要没有特别指出,就是重量基准。
(实施例1)
<密封用片的制作>
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2350份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.5份、炭黑(商品名“#20”、三菱化学公司制)13份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.5份、热塑性树脂(商品名“SIBSTAR072T”KANEKA公司制100份、相对于除去填料以外的全部树脂成分整体为50重量%的防静电剂(产品名“PELESTAT”、三洋化成公司制),利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在脱模处理膜上而制成片状,在其上在60℃的温度层压相同的脱模处理膜,制作出厚400μm、纵350mm、横350mm的密封用片。作为上述脱模处理膜,使用了由进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的膜。
(实施例2)
<密封用片的制作>
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2350份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.5份、炭黑(商品名“#20”、三菱化学公司制)13份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.5份、热塑性树脂(商品名“SIBSTAR072T”、KANEKA公司制)100份、相对于除去填料以外的全部树脂成分整体为5重量%的防静电剂(产品名“PELESTAT”、三洋化成公司制),利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在脱模处理膜上而制成片状,在其上在60℃的温度层压相同的脱模处理膜,制作出厚400μm、纵350mm、横350mm的密封用片。作为上述脱模处理膜,使用了由进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的膜。
(实施例3)
<密封用片的制作>
(最外层的制作)
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2350份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.5份、炭黑(商品名“#20”、三菱化学公司制)13份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.5份、热塑性树脂(商品名“SIBSTAR072T”KANEKA公司制)100份、相对于除去填料以外的全部树脂成分整体为50重量%的防静电剂(产品名“PELESTAT”、三洋化成公司制),利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在脱模处理膜上而制成片状,制作出厚200μm、纵350mm、横350mm的最外层。作为上述脱模处理膜,使用了由进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的膜。
(最内层的制作)
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2080份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.2份、炭黑(商品名“#20”、三菱化学公司制)11份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.6份、热塑性树脂(商品名“SIBSTAR072T”、KANEKA公司制)65份,利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在脱模处理膜上而制成片状,制作出厚200μm、纵350mm、横350mm的最内层。作为上述脱模处理膜,使用了由进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的膜。
将所制作的最外层和最内层利用层压机在60℃的温度贴合,制作出本实施例3的厚400μm的密封用片。
(实施例4)
<密封用片的制作>
(最外层的制作)
除了将实施例3的最外层的防静电剂的含量变更为5重量%以外,与实施例3的最外层相同地制作出本实施例4的最外层。
(最内层的制作)
制作出与实施例3的最内层相同的最内层。
将所制作的最外层和最内层利用层压机在60℃的温度贴合,制作出本实施例4的厚400μm的剥离用片。
(实施例5)
<密封用片的制作>
(最外层的制作)
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2350份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.5份、炭黑(商品名“#20”、三菱化学公司制)13份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.5份、热塑性树脂(商品名“SIBSTAR072T”、KANEKA公司制)100份,利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在脱模处理膜上而制成片状,制作出厚200μm、纵350mm、横350mm的最内层。作为上述脱模处理膜,使用了由进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的膜。
(最内层的制作)
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2080份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.2份、炭黑(商品名“#20”、三菱化学公司制)11份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.6份、热塑性树脂(商品名“SIBSTAR072T”、KANEKA公司制)65份、相对于除去填料以外的全部树脂成分整体为50重量%的防静电剂(产品名“PELESTAT”、三洋化成公司制),利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在脱模处理膜上而制成片状,制作出厚200μm、纵350mm、横350mm的最内层。作为上述脱模处理膜,使用了由进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的膜。
将所制作的最外层和最内层利用层压机在60℃的温度贴合,制作出本实施例5的厚400μm的剥离用片。
(实施例6)
<密封用片的制作>
(最外层的制作)
制作出与实施例5的最外层相同的最外层。
(最内层的制作)
除了将实施例5的最内层的防静电剂的含量变更为5重量%以外,与实施例5的最内层相同地制作出本实施例6的最外层。
将所制作的最外层和最内层利用层压机在60℃的温度贴合,制作出本实施例1的厚400μm的剥离用片。
(实施例7)
<防静电剥离用片的制作>
在作为剥离衬垫(隔膜)的进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜的与硅酮脱模处理面相反一侧的面涂布防静电剂层形成用溶液D后,在60℃加热干燥1分钟,形成厚度约100nm的防静电剂层。而且,防静电剂层形成用溶液D作为防静电剂使用了产品名:セプルジーダ(化合物名:聚噻吩),以1%的浓度分散在甲乙酮(MEK)溶剂中而制备。
<密封用片的制作>
相对于环氧树脂(商品名“YSLV-80XY”、新日铁化学公司制)100份,配合酚醛树脂(商品名“MEH-7851-SS”、明和化成公司制)110份、球状填料(商品名“FB-9454FC”、电化学工业公司制)2350份、硅烷偶联剂(商品名“KBM-403”、信越化学公司制)2.5份、炭黑(商品名“#20”、三菱化学公司制)13份、固化促进剂(商品名“2PHZ-PW”、四国化成工业公司制)3.5份、热塑性树脂(商品名“SIBSTAR072T”、KANEKA公司制)100份,利用辊混炼机依次在60℃加热2分钟、在80℃加热2分钟、在120℃加热6分钟,合计10分钟,在减压条件下(0.01kg/cm2)下熔融混炼,制备出混炼物。然后,将所得的混炼物在120℃的条件下利用狭缝形模头法涂布在所述防静电剥离用片的硅酮处理面而制成片状,在另一方的面上也在60℃的温度层压相同的防静电剥离用片而制作出厚400μm、纵350mm、横350mm的密封用片。
<表面固有电阻值的测定>
将密封用片的最内层侧的剥离用片、最外层侧的剥离用片分别剥离,测定出最内层、最外层、剥离用片的表面的表面固有电阻值。而且,表面固有电阻是使用(株)ADVANTEST公司制高阻表TR-8601的超高电阻测定用试样箱TR-42,在23℃、60%RH的条件下,施加100V的直流电压1分钟而测定。将结果表示于表1中。
<剥离带电电压的测定>
在预先进行了除电的亚克力板(厚:1mm、宽:70mm、长:100mm)上,贴合剥离了与测定面相反一侧的剥离用片的密封用片。在贴合时,使用手压辊,以使亚克力板与密封用片的剥离用片除去面夹隔着双面胶带相面对的方式进行。
在23℃、50%RH的环境下放置一天后,将样品安放在给定的位置(参照图12)。将剥离用片的端部固定在自动卷绕机上,以使剥离角度为180°、剥离速度为10m/min的方式剥离。利用固定在给定的位置的电位测量仪(春日电机公司制、KSD-0103)测定出此时产生的剥离用片侧的面的电位。测定是在23℃、50%RH的环境下进行。将结果表示于表1中。
<剥离力的测定>
从密封用片中,切出长100mm、宽20mm的条状的试验片。将该试验片的与测定面相反一侧的剥离用片除去,将剥离用片除去面侧加衬在SUS板上后,使用剥离试验机(商品名“AutographAGS-J”岛津制作所公司制),在温度23℃的条件下,在剥离角度:90°、拉伸速度:300mm/min的条件下,从密封用片拉剥剥离用片(使之在剥离用片与密封用片界面处进行剥离),测定进行该拉剥时的载荷的最大载荷(除去测定初期的峰顶以外的载荷的最大值),将该最大载荷作为剥离用片与密封用片之间的剥离力(剥离用片对密封用片的粘接力)(粘接力;N/20mm宽度)求出。将结果表示于表1中。
[表1]
符号的说明
10、40密封用片,
20、50层叠体,
22半导体晶片,
23、53半导体芯片,
28、58密封体,
29、59半导体装置,
60临时固定材料
Claims (4)
1.一种密封用片,是用于填埋半导体芯片的密封用片,其特征在于,
任意一个表面的表面固有电阻值为1.0×1012Ω以下。
2.根据权利要求1所述的粘接片,其特征在于,
在所述密封用片中含有防静电剂。
3.一种半导体装置的制造方法,其特征在于,
具备:
工序A,在支撑体上固定半导体芯片;和
工序B,将固定于所述支撑体的所述半导体芯片填埋在密封用片中而形成密封体,
所述密封用片的任意一个表面的表面固有电阻值为1.0×1012Ω以下。
4.根据权利要求3所述的半导体装置的制造方法,其特征在于,
在所述密封用片中含有防静电剂。
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KR20180031713A (ko) * | 2015-08-25 | 2018-03-28 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치 |
JP5978380B1 (ja) * | 2015-12-25 | 2016-08-24 | 太陽インキ製造株式会社 | 半導体用封止材 |
US10756072B2 (en) * | 2015-12-25 | 2020-08-25 | Intel Corporation | Conductive wire through-mold connection apparatus and method |
CN107154453B (zh) * | 2016-03-04 | 2021-11-16 | 日东电工(上海松江)有限公司 | 元件集合体临时固定片及其制造方法 |
KR101800367B1 (ko) * | 2016-08-24 | 2017-11-28 | 한국기계연구원 | 마이크로 소자 전사방법 및 마이크로 소자 전사방법으로 제조된 마이크로 소자 기판 |
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