CN105447270B - 指数型忆感器电路 - Google Patents
指数型忆感器电路 Download PDFInfo
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- CN105447270B CN105447270B CN201510940074.8A CN201510940074A CN105447270B CN 105447270 B CN105447270 B CN 105447270B CN 201510940074 A CN201510940074 A CN 201510940074A CN 105447270 B CN105447270 B CN 105447270B
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- 230000004907 flux Effects 0.000 claims abstract description 32
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- 238000013178 mathematical model Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
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- 238000004377 microelectronic Methods 0.000 description 1
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- 230000009154 spontaneous behavior Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
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CN201510940074.8A CN105447270B (zh) | 2015-12-15 | 2015-12-15 | 指数型忆感器电路 |
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CN201510940074.8A CN105447270B (zh) | 2015-12-15 | 2015-12-15 | 指数型忆感器电路 |
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CN105447270A CN105447270A (zh) | 2016-03-30 |
CN105447270B true CN105447270B (zh) | 2018-07-20 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107451380B (zh) * | 2017-09-08 | 2023-04-18 | 杭州电子科技大学 | 实现指数型荷控忆容器仿真器的电路 |
CN108416102B (zh) * | 2018-02-05 | 2021-08-31 | 杭州电子科技大学 | 一种忆感器的等效模拟电路 |
CN108696274A (zh) * | 2018-04-24 | 2018-10-23 | 杭州电子科技大学 | 一种指数型流控忆阻器的电路模型 |
CN110111655A (zh) * | 2019-05-06 | 2019-08-09 | 成都师范学院 | 一种极简的浮地磁控忆感器电路仿真模型 |
CN111079363B (zh) * | 2019-12-12 | 2023-03-31 | 杭州电子科技大学 | 一种双曲正弦型忆阻器电路模型 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103095191A (zh) * | 2013-01-29 | 2013-05-08 | 中国矿业大学 | 开关磁阻电机忆感器模型建模方法 |
CN205263816U (zh) * | 2015-12-15 | 2016-05-25 | 杭州电子科技大学 | 一种指数型忆感器电路 |
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TWI241591B (en) * | 2002-08-09 | 2005-10-11 | Hitachi Ltd | Semiconductor device and memory card using the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN103095191A (zh) * | 2013-01-29 | 2013-05-08 | 中国矿业大学 | 开关磁阻电机忆感器模型建模方法 |
CN205263816U (zh) * | 2015-12-15 | 2016-05-25 | 杭州电子科技大学 | 一种指数型忆感器电路 |
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