TWI572072B - 壓電元件的製造方法及壓電基板 - Google Patents
壓電元件的製造方法及壓電基板 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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Description
本發明是有關於一種壓電元件的製造方法及一種壓電基板。
現有的壓電元件通常是先成膜後再以裁切或沖壓(punch)的方式製作成多個壓電元件。後續再將壓電元件貼合在基板上。然而裁切或沖壓後形成的壓電元件要透過黏著劑才能黏貼在基板上。但此黏著製程可能會使產品良率下降,或甚至產生其他負面影響。舉例而言,黏著製程會造成產品厚度增加,或影響產品的音響阻抗。此外,黏著製程中也可能會發生貼合不良或貼合錯位等製程問題。因此,如何能夠避免上述問題發生成為本技術領域的重要課題之一。
為了解決先前技術所述的問題,本發明提供一種壓電元件的製造方法,透過圖案化遮罩層形成壓電元件於基板上,因此後續不需額外的黏著製程將壓電元件貼合在基
板上,也就不會發生先前技術中所述的黏著製程可能會造成的問題。
本發明提供一種壓電元件的製造方法,包含:形成圖案化遮罩層於基板上方,其中圖案化遮罩層具有一開口露出基板的一部分;形成壓電元件於開口內;以及移除圖案化遮罩層,以獲得壓電元件,其中壓電元件具有中心部分及周邊部分鄰接中心部分,周邊部分的最大高度大於中心部分的高度。
在數個實施例中,形成壓電元件於開口內包含:填充壓電材料溶液於開口內;以及固化壓電材料溶液,以形成壓電元件。
在數個實施例中,壓電材料溶液的高度小於開口的深度。
在數個實施例中,圖案化遮罩層包含塑料層及黏著層位於塑料層及基板之間。
在數個實施例中,圖案化遮罩層包含聚對苯二甲酸乙二酯、聚醯亞胺、金屬、合金、矽或其組合。
本發明另提供一種壓電基板,包含基板以及壓電元件。壓電元件位於基板上,其中壓電元件具有中心部分及周邊部分鄰接中心部分,周邊部分的最大高度大於中心部分的高度。
在數個實施例中,周邊部分的高度自周邊部分的側壁朝中心部分先增加再減少。
在數個實施例中,周邊部分的側壁與基板的表面之間的夾角為40°至100°。
在數個實施例中,周邊部分的最大高度為中心部分的高度的二倍至二十一倍。
10‧‧‧基板
20‧‧‧圖案化遮罩層
20a‧‧‧開口
22‧‧‧塑料層
24‧‧‧黏著層
30‧‧‧壓電材料溶液
35‧‧‧壓電元件
35a‧‧‧側壁
d1‧‧‧深度
H1‧‧‧最大高度
h1、H2‧‧‧高度
Pc‧‧‧中心部分
Pp‧‧‧周邊部分
α‧‧‧夾角
第1A-1D圖為依照本發明數個實施例之製造壓電元件的方法在各製程階段的剖面示意圖。
接著以實施例並配合圖式以詳細說明本發明,在圖式或描述中,相似或相同的部分係使用相同之符號或編號。在圖式中,實施例之形狀或厚度可能擴大,以簡化或方便標示,而圖式中元件之部分將以文字描述之。可瞭解的是,未繪示或未描述之元件可為熟習該項技藝者所知之各種樣式。本實施方式為本發明之理想化實施例(及中間結構)以示意性的橫截面來說明,且本領域技術人員可預期本實施方式中製造方法、形狀及/或公差的合理改變。因此,不應將本發明之實施例理解為限制本發明所請之範圍。
如先前技術所述,裁切或沖壓後形成的壓電元件要透過黏著劑才能黏貼在基板上。但此黏著製程可能會使產品良率下降,或甚至產生其他負面影響。因此,本發明提供一種壓電元件的製造方法,透過圖案化遮罩層形成壓電元
件於基板上,因此後續不需額外的黏著製程將壓電元件貼合在基板上,也就不會發生先前技術中所述的黏著製程可能會造成的問題。
第1A-1D圖為依照本發明數個實施例之製造壓電元件的方法在各製程階段的剖面示意圖。請參照第1A圖,提供一基板10。在數個實施例中,基板10的材質為玻璃、石英、透明高分子材料或其他合適的材料。
然後,形成圖案化遮罩層20於基板10上方,如第1A圖所示。圖案化遮罩層20具有一開口20a露出基板10的一部分。換言之,開口20a為貫穿孔。在數個實施例中,圖案化遮罩層20具有多個開口20a,各開口20a露出基板10的一部分。在數個實施例中,先對完整的遮罩層(未繪示)進行沖壓或裁切製程,形成圖案化遮罩層20,然後再將其貼合在基板上10,以形成如第1A圖的結構。在數個實施例中,圖案化遮罩層20包含聚對苯二甲酸乙二酯、聚醯亞胺、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)、金屬、合金、矽或其組合。在數個實施例中,金屬或合金包含鎳、鉻、鋁、鉬、釹、鈦、銅、銀、金、鋅、銦或鎵。
在數個實施例中,如第1A圖所示,圖案化遮罩層20包含塑料層22及黏著層24,黏著層24位於塑料層22及基板10之間。在數個實施例中,塑料層22包含聚對苯二甲酸乙二酯、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)或其組合。在數個實施例中,黏著層24包含聚氨酯、聚乙烯醇(polyvinyl alcohol)、環氧樹脂(epoxy)、丙
烯酸酯共聚物(acrylate copolymer)、熱可塑聚氨酯(thermoplastic polyurethane)、氯化聚丙烯(chlorinated polypropylene)、乙酸乙烯酯(vinyl acetate)或其組合。在數個實施例中,塑料層22的厚度高於壓電材料溶液中心的厚度。在數個實施例中,黏著層24的厚度小於或等於25微米。
請參照第1B-1C圖,形成壓電元件35於開口20a內。詳細而言,如第1B圖所示,填充壓電材料溶液30於開口20a內。在數個實施例中,壓電材料溶液30包含氟系樹脂及溶劑。在數個實施例中,氟系樹脂為偏二氟乙烯-四氟乙烯共聚物、偏二氟乙烯-三氟乙烯共聚物、聚偏二氟乙烯或其組合。在數個實施例中,溶劑為二甲基甲醯胺(DMF)、甲乙酮(MEK)、丙酮、N-甲基吡咯烷酮(NMP)、二甲基乙醯胺(DMAc)或其組合。在數個實施例中,壓電材料溶液30的固含量為5%至40%。在數個實施例中,壓電材料溶液30更包含奈米碳,例如碳奈米管、碳奈米纖維、碳奈米球、石墨烯或其組合。
在數個實施例中,如第1B圖所示,壓電材料溶液30在開口20a中的高度h1為70微米至110微米之間。在此所述的「高度h1」是指壓電材料溶液30位於開口20a中間的高度,而非靠近圖案化遮罩層20處的高度。在數個實施例中,壓電材料溶液30的高度h1小於開口20a的深度d1。
值得注意的是,假如圖案化遮罩層20為一整層的膠層(例如可剝膠層),在填充壓電材料溶液30於開口20a內之後,壓電材料溶液30中的溶劑可能會溶解膠層,而與
膠層形成同一膜層,造成對後續製程的負面影響。因此在本發明的數個實施例中,圖案化遮罩層20包含不具黏著性的聚對苯二甲酸乙二酯、聚醯亞胺、金屬、合金、矽或其組合,以避免上述問題發生。
然後,如第1B-1C圖所示,固化壓電材料溶液30,以形成壓電元件35。在數個實施例中,對壓電材料溶液30進行一固化製程,以避免流動。因應壓電材料的選擇,會選用不同溫度的固化製程。
請參照第1C-1D圖,移除圖案化遮罩層20,以獲得位於基板10上的壓電元件35。在數個實施例中,在移除圖案化遮罩層20之後,進行另一固化製程。換言之,固化製程可一次進行或分段進行。
由上述可知,壓電元件35是直接形成在基板10上,因此後續不需額外的黏著製程將壓電元件貼合在基板上,也就不會發生先前技術中所述的黏著製程可能會造成的問題。
所形成的壓電元件35具有中心部分Pc及周邊部分Pp。周邊部分Pp鄰接中心部分Pc。在數個實施例中,以上視角度而言,周邊部分Pp圍繞中心部分Pc。在此所述的「中心部分Pc」係指在壓電元件35之中,厚度均勻(例如平均厚度的正負10%以內)的部分。在此所述的「周邊部分Pp」係指在壓電元件35之中,位於中心部分Pc周邊的另一部分。
在數個實施例中,周邊部分Pp的最大高度H1大於中心部分Pc的高度H2,這是因為填充壓電材料溶液30時,有一部分的壓電材料溶液30會分佈在圖案化遮罩層20的側壁,如第1B圖所示。
本發明另提供一種壓電基板,包含基板以及壓電元件。請參照第1D圖,壓電基板包含基板10以及壓電元件35。壓電元件35位於基板10上。在數個實施例中,壓電元件35接觸基板10,並附著在基板10上。
壓電元件35具有中心部分Pc及周邊部分Pp。周邊部分Pp鄰接中心部分Pc。周邊部分Pp的最大高度H1大於中心部分Pc的高度H2。在數個實施例中,中心部分Pc的高度H2為1微米至30微米之間。
在數個實施例中,周邊部分Pp的高度(未標示)自周邊部分Pp的側壁35a朝中心部分Pc先增加再減少。
在數個實施例中,周邊部分Pp的側壁35a與基板10的表面的夾角α為40°至100°。在數個實施例中,周邊部分Pp的側壁35a與基板10的表面的夾角α為60°至90°。
在數個實施例中,周邊部分Pp的最大高度H1為中心部分Pc的高度H2的二倍至二十一倍。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧基板
35‧‧‧壓電元件
35a‧‧‧側壁
H1‧‧‧最大高度
H2‧‧‧高度
Pc‧‧‧中心部分
Pp‧‧‧周邊部分
α‧‧‧夾角
Claims (8)
- 一種壓電元件的製造方法,包含:形成一圖案化遮罩層於一基板上方,其中該圖案化遮罩層具有一開口露出該基板的一部分;形成一壓電元件於該開口內,其中形成該壓電元件於該開口內包含:填充一壓電材料溶液於該開口內;以及固化該壓電材料溶液,以形成該壓電元件;以及移除該圖案化遮罩層,以獲得該壓電元件,其中該壓電元件具有一中心部分及一周邊部分鄰接該中心部分,該周邊部分的一最大高度大於該中心部分的一高度。
- 如請求項1所述之壓電元件的製造方法,其中該壓電材料溶液的一高度小於該開口的一深度。
- 如請求項1所述之壓電元件的製造方法,其中該圖案化遮罩層包含一塑料層及一黏著層位於該塑料層及該基板之間。
- 如請求項1所述之壓電元件的製造方法,其中該圖案化遮罩層包含聚對苯二甲酸乙二酯、聚醯亞胺、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)、金屬、合金、矽或其組合。
- 一種壓電基板,包含:一基板;以及一壓電元件,位於該基板上,其中該壓電元件包含氟系樹脂,該壓電元件具有一中心部分及一周邊部分鄰接該中心部分,該周邊部分的一最大高度大於該中心部分的一高度。
- 如請求項5所述之壓電基板,其中該周邊部分的一高度自該周邊部分的一側壁朝中心部分先增加再減少。
- 如請求項5所述之壓電基板,其中該周邊部分的一側壁與該基板的一表面之間的夾角為40°至100°。
- 如請求項5所述之壓電基板,其中該周邊部分的該最大高度為該中心部分的該高度的二倍至二十一倍。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08148955A (ja) * | 1994-11-18 | 1996-06-07 | Matsushita Electric Ind Co Ltd | 圧電振動子及びその製造方法 |
WO2006130665A2 (en) * | 2005-05-31 | 2006-12-07 | Mears Technologies, Inc. | Microelectromechanical systems (mems) device including a superlattice and associated methods |
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US5499756A (en) * | 1995-02-03 | 1996-03-19 | Motorola, Inc. | Method of applying a tacking agent to a printed circuit board |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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