CN104882522A - Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method - Google Patents
Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method Download PDFInfo
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- CN104882522A CN104882522A CN201510308850.2A CN201510308850A CN104882522A CN 104882522 A CN104882522 A CN 104882522A CN 201510308850 A CN201510308850 A CN 201510308850A CN 104882522 A CN104882522 A CN 104882522A
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000002019 doping agent Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 description 7
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a dopant-free AlGaN-based ultraviolet light-emitting diode and a preparation method. The dopant-free AlGaN-based ultraviolet light-emitting diode comprises a substrate, a dopant-free n-type layer, an active region and a dopant-free p-type layer, wherein the dopant-free n-type layer is manufactured on the substrate; the active region is manufactured on the dopant-free n-type layer; and the dopant-free p-type layer is manufactured on the active region. The dopant-free AlGaN-based ultraviolet light-emitting diode does not need to introduce any dopant, the quality of a crystal material can be improved, and growing steps of the material are simplified.
Description
Technical field
The invention belongs to technical field of semiconductors, be applicable to AlGaN base ultraviolet and deep-UV light-emitting diode, refer to a kind of AlGaN base ultraviolet light-emitting diode and preparation method of no dopant especially, its any impurity and obtain N-shaped conduction and p-type electric-conducting of need not adulterating, thus realizes the method for LED luminescence.
Background technology
The semiconductor lighting being core with GaN base LED in recent years develops swift and violent, and white light LEDs efficiency has had large increase, becomes lighting source of new generation gradually.At present, no matter in the blue green light LED of GaN/InGaN Multiple Quantum Well, or in the ultraviolet LED of AlGaN base, its N-shaped and p-type electric-conducting layer all adopt the mode introducing impurity to realize.Usual N-shaped GaN impurity is the impurity of Si, p-type GaN is Mg.But in order to obtain higher electronics and hole concentration, Si or the Mg atom that certainly will will adulterate a large amount of, this impacts to the crystal mass of GaN material, and reduces the mobility in electronics or hole.The diffusion of Mg atom also will have a strong impact on the quality of quantum well in addition, thus cause luminous efficiency to reduce.
Recently, a kind of novel doping method of bibliographical information-polarization doping is had.The method utilizes the polarity effect of GaN base compound and the relation of component, and by making content gradually variational obtain equally distributed clean polarization negative electrical charge or the positive charge that only polarizes, and induction produces free hole or electronics thus, realizes N-shaped or p-type electric-conducting.Polarization doping method does not rely on and thermal ionization, but the polarized electric field relying on composition gradient to bring ionizes the electric field of some inherent shortcomings or impurity in epitaxial material.Therefore using the method for polarization doping, can high conductivity be realized without the need to introducing any dopant.It is reported, in the N-shaped GaN base material utilizing polarization doping method to obtain at present, electronics and hole concentration are all up to 1E
18/ cm
3.The electronics of this concentration or hole are enough to the luminescence realizing GaN base LED.
Summary of the invention
The object of the invention is to, provide a kind of AlGaN base ultraviolet light-emitting diode structure and preparation method of no dopant, it need not be introduced and anyly mix agent, can improve crystalline material quality, and simplify the growth step of material.
The invention provides a kind of AlGaN base ultraviolet light-emitting diode of no dopant, comprising:
One substrate;
One no dopant n-layer, it is produced on substrate;
One active area, it is produced in no dopant n-layer;
One no dopant p-type layer, it makes on the active area.
The present invention also provides a kind of growing method of AlGaN base ultraviolet light-emitting diode of no dopant, and it comprises:
Step 1: get a substrate;
Step 2: along the no dopant n-layer in Grown polar surface or semi-polarity face, any active dopant is not introduced in growth course, the flow of III metal organic source materials A l and the flow of metal organic source material gallium that input growth response room are controlled, control the ratio of TMAl/ (TMGa+TMAl) in reative cell, form the no dopant n-layer of content gradually variational, wherein Al content gradually variational is satisfied reduces gradually along polarized electric field direction;
Step 3: grow active area in no dopant n-layer;
Step 4: grow no dopant p-type layer on the active area, any active dopant is not introduced in growth course, the flow of III metal organic source materials A l and the flow of metal organic source material gallium that input growth response room are controlled, control the ratio of TMAl/ (TMGa+TMAl) in reative cell, form the p-type AlGaN layer of content gradually variational, wherein Al content gradually variational meets increases gradually along polarized electric field direction, completes preparation.
The invention has the beneficial effects as follows, it need not be introduced and anyly mix agent, can improve crystalline material quality, and simplify the growth step of material.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 is the AlGaN base ultraviolet light-emitting diode structural section figure of no dopant.
Fig. 2 is the structural change flow chart of AlGaN base ultraviolet light-emitting diode structure in growth course of no dopant.
Fig. 3 is that the AlGaN base ultraviolet light-emitting diode structure of no dopant is along TMAl and the TMGa situation over time in reative cell in (0001) polar surface growth course.
Embodiment
Refer to shown in Fig. 1, the invention provides a kind of AlGaN base ultraviolet light-emitting diode of no dopant, comprising:
One substrate 1:
One no dopant n-layer 2, it makes on substrate 1, and the material of described no dopant n-layer 2 is the N-shaped Al of content gradually variational
lga
1-Ln, thickness is 50-500nm, and the L value of described component reduces, from L along polarized electric field dimension linear
1change to L
2, wherein 0≤L
2< L
1≤ 1, to ensure that polarized electric field linearly increases, thus non-equilibrium polarized electric field ionized impurity, defect etc. can be utilized to produce electronics, this layer act as the electronics be provided at active area 3 recombination luminescence;
One active area 3, it is produced in no dopant n-layer 2, described active area 3 is double-heterostructure, single quantum or multi-quantum pit structure, it provides energy to excite the radiant output of this ultraviolet light-emitting diode, described single quantum or multi-quantum pit structure active area 3, the number of quantum well structure is 1-15, the thickness of well layer is 2-6nm, barrier layer thickness is 5-12nm, the material of this well layer is AlGaN, and wherein the component of Al is x, 0≤x≤1, this layer act as limiting carrier, makes charge carrier luminous in this region composite;
One no dopant p-type layer 4, it is produced on active area 3, and described non-impurity-doped p-type layer 4 is the p-type Al of content gradually variational
mga
1-Mn, thickness is 50-500nm, and the M value of described component increases, from M along polarized electric field dimension linear
1change to M
2, wherein 0≤M
1< M
2≤ 1, to ensure that polarized electric field linearly reduces, thus non-equilibrium polarized electric field ionized impurity, defect etc. can be utilized to produce hole, this layer act as the hole be provided at active area 3 recombination luminescence.
The wherein no dopant N-shaped Al of content gradually variational
lga
1-Ln layer 2 and no dopant p-type Al
mga
1-Mthe Al component minimum value of N layer 4 is satisfied is more than or equal to potential well Al in the quantum well structure of active area 3
xga
1-xthe Al constituent content of N is 0≤x≤L
2< L
1≤ 1 and 0≤x≤M
1< M
2≤ 1, ensure that the photon that active area 3 sends can not be absorbed by no dopant n-layer 2 and no dopant p-type layer 4 with this.
Refer to Fig. 2, and the growing method that Fig. 1 the present invention also provides a kind of AlGaN base ultraviolet light-emitting diode of no dopant is consulted in combination, it comprises:
Step 1: get a substrate 1;
Step 2: along the no dopant n-layer 2 in growth polarity face or semi-polarity face on substrate 1, any active dopant is not introduced in growth course, the flow of III metal organic source materials A l and the flow of metal organic source material gallium that input growth response room are controlled, control the ratio of TMAl/ (TMGa+TMAl) in reative cell, form the no dopant n-layer 2 of content gradually variational, wherein Al content gradually variational is satisfied reduces gradually along polarized electric field direction, and the material of described no dopant n-layer 2 is the N-shaped Al of content gradually variational
lga
1-Ln, thickness is 50-500nm, and the L value of described component reduces, from L along polarized electric field dimension linear
1change to L
2, wherein 0≤L
2< L
1≤ 1;
Step 3: grow active area 3 in no dopant n-layer 2, described active area 3 is double-heterostructure, single quantum or multi-quantum pit structure, it provides energy to excite the radiant output of this ultraviolet light-emitting diode, described single quantum or multi-quantum pit structure active area 3, the number of quantum well structure is 1-15, and the thickness of well layer is 2-6nm, barrier layer thickness is 5-12nm, the material of this well layer is AlGaN, and wherein the component of Al is x, 0≤x≤1;
Step 4: grow no dopant p-type layer 4 on active area 3, any active dopant is not introduced in growth course, the flow of III metal organic source materials A l and the flow of metal organic source material gallium that input growth response room are controlled, control the ratio of TMAl/ (TMGa+TMAl) in reative cell, form the p-type AlGaN layer of content gradually variational, wherein Al content gradually variational meets increases gradually along polarized electric field direction, and described non-impurity-doped p-type layer 4 is the p-type Al of content gradually variational
mga
1-Mn, thickness is 50-500nm, and the M value of described component increases, from M along polarized electric field dimension linear
1change to M
2, wherein 0≤M
1< M
2≤ 1, complete preparation.
Wherein the Al component minimum value of no dopant N-shaped AlLGal-LN layer 2 and no dopant p-type AlMGal-MN layer 4 is satisfied is more than or equal to potential well Al in the quantum well structure of active area 3
xga
1-xthe Al constituent content of N is 0≤x≤L
2< L
1≤ 1 and 0≤x≤M
1< M
2≤ 1.
Wherein step 2 and step 4 can exchange sequences, namely first grow no dopant p-type layer 4, then grow active area 3, and then grow no dopant n-layer 2.
Consult Fig. 3, give the AlGaN base ultraviolet light-emitting diode structure of no dopant described in one embodiment of the present invention along TMAl and the TMGa situation over time in reative cell in (0001) polar surface manufacturing process.
Get a substrate 1, grow no dopant n-layer 2 on substrate 1, as when preferred (0001) polar surface growth, because in mocvd method growth, the polarized electric field of AlGaN material is contrary with the direction of growth, then the ratio of TMAl/ (TMGa+TMAl) increases (as shown in Figure 3 0t1 section) gradually with growth time, just can realize Al component to reduce gradually along polarized electric field direction, grow the no dopant n-layer 2 of content gradually variational;
No dopant n-layer 2 grows active area 3, and in corresponding reative cell, the ratio of TMAl and TMGa is with growth time t1-t2 section as shown in Figure 3;
Active area 3 grows no dopant p-type layer 4, when preferred (0001) polar surface growth, because in mocvd method growth, the polarized electric field of AlGaN material is contrary with the direction of growth, then the ratio of TMAl/ (TMGa+TMAl) reduces (as shown in Figure 3 t2-t3 section) gradually with growth time, just can realize Al component to increase gradually along polarized electric field direction, grow the no dopant p-type layer 4 of content gradually variational.
Wherein step 1 and step 3 can exchange sequences, namely first grow the no dopant p-type layer of content gradually variational, then grow AlGaN/AlGaN double-heterostructure or quantum well structure, and then the no dopant n-layer of growth components gradual change.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1. an AlGaN base ultraviolet light-emitting diode for no dopant, comprising:
One substrate;
One no dopant n-layer, it is produced on substrate;
One active area, it is produced in no dopant n-layer;
One no dopant p-type layer, it makes on the active area.
2. the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 1, wherein said active area is double-heterostructure, single quantum or multi-quantum pit structure, and it provides energy to excite the radiant output of this ultraviolet light-emitting diode.
3. the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 2, wherein said single quantum or multi-quantum pit structure active area, the number of quantum well structure is 1-15, the thickness of well layer is 2-6nm, barrier layer thickness is 5-12nm, the material of this well layer is AlGaN, and wherein the component of Al is x, 0≤x≤1.
4. the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 1, the material of wherein said no dopant n-layer is the N-shaped Al of content gradually variational
lga
1-Ln, thickness is 50-500nm, and the L value of described component reduces, from L along polarized electric field dimension linear
1change to L
2, wherein 0≤L
2< L
1≤ 1.
5. the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 1, wherein said non-impurity-doped p-type layer is the p-type Al of content gradually variational
mga
1-Mn, thickness is 50-500nm, and the M value of described component increases, from M along polarized electric field dimension linear
1change to M
2, wherein 0≤M
1< M
2≤ 1.
6. the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 1, the wherein N-shaped Al of content gradually variational
lga
1-Ln layer and p-type Al
mga
1-Mthe Al component minimum value of N layer is satisfied is more than or equal to potential well Al in the quantum well structure of active area
xga
1-xthe Al constituent content of N is 0≤x≤L
2< L
1≤ 1 and 0≤x≤M
1< M
2≤ 1.
7. a growing method for the AlGaN base ultraviolet light-emitting diode of no dopant, it comprises:
Step 1: get a substrate;
Step 2: along the no dopant n-layer in Grown polar surface or semi-polarity face, any active dopant is not introduced in growth course, the flow of III metal organic source materials A l and the flow of metal organic source material gallium that input growth response room are controlled, control the ratio of TMAl/ (TMGa+TMAl) in reative cell, form the no dopant n-layer of content gradually variational, wherein Al content gradually variational is satisfied reduces gradually along polarized electric field direction;
Step 3: grow active area in no dopant n-layer;
Step 4: grow no dopant p-type layer on the active area, any active dopant is not introduced in growth course, the flow of III metal organic source materials A l and the flow of metal organic source material gallium that input growth response room are controlled, control the ratio of TMAl/ (TMGa+TMAl) in reative cell, form the p-type AlGaN layer of content gradually variational, wherein Al content gradually variational meets increases gradually along polarized electric field direction, completes preparation.
8. the growing method of the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 7, wherein said active area is double-heterostructure, single quantum or multi-quantum pit structure, and it provides energy to excite the radiant output of this ultraviolet light-emitting diode.
9. the growing method of the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 8, wherein said single quantum or multi-quantum pit structure active area, the number of quantum well structure is 1-15, the thickness of well layer is 2-6nm, barrier layer thickness is 5-12nm, the material of this well layer is AlGaN, and wherein the component of Al is x, 0≤x≤1.
10. the growing method of the AlGaN base ultraviolet light-emitting diode of no dopant as claimed in claim 7, the material of wherein said no dopant n-layer is the N-shaped Al of content gradually variational
lga
1-Ln, thickness is 50-500nm, and the L value of described component reduces, from L along polarized electric field dimension linear
1change to L
2, wherein 0≤L
2< L
1≤ 1.
The growing method of the AlGaN base ultraviolet light-emitting diode of 11. no dopant as claimed in claim 7, wherein said non-impurity-doped p-type layer is the p-type Al of content gradually variational
mga
1-Mn, thickness is 50-500nm, and the M value of described component increases, from M along polarized electric field dimension linear
1change to M
2, wherein 0≤M
1< M
2≤ 1.
The growing method of the AlGaN base ultraviolet light-emitting diode of 12. no dopant as claimed in claim 7, the wherein N-shaped Al of content gradually variational
lga
1-Ln layer and p-type Al
mga
1-Mthe Al component minimum value of N layer is satisfied is more than or equal to potential well Al in the quantum well structure of active area
xga
1-xthe Al constituent content of N is 0≤x≤L
2< L
1≤ 1 and 0≤x≤M
1< M
2≤ 1.
The growing method of the AlGaN base ultraviolet light-emitting diode of 13. no dopant as claimed in claim 7, wherein step 2 and step 4 can exchange sequences, and first grow no dopant content gradually variational p-type AlGaN layer, then grow AlGaN/AlGaN double-heterostructure or quantum well structure, and then grow no dopant content gradually variational N-shaped AlGaN layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308850.2A CN104882522A (en) | 2015-06-08 | 2015-06-08 | Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method |
| PCT/CN2016/076851 WO2016197650A1 (en) | 2015-06-08 | 2016-03-21 | Dopant-free algan-based ultraviolet light emitting diode and preparation method thereof |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN201510308850.2A CN104882522A (en) | 2015-06-08 | 2015-06-08 | Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method |
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|---|---|
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Family
ID=53949934
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Country Status (2)
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| WO (1) | WO2016197650A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016197650A1 (en) * | 2015-06-08 | 2016-12-15 | 中国科学院半导体研究所 | Dopant-free algan-based ultraviolet light emitting diode and preparation method thereof |
| CN106920739A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院宁波材料技术与工程研究所 | A kind of epitaxial growth Al based on gradient lamination buffer layer thin filmmGa1‑mThe method of N |
| CN108305907A (en) * | 2018-01-26 | 2018-07-20 | 中国电子科技集团公司第三十八研究所 | A kind of novel homojunction PIN ultraviolet detectors |
| CN111146318A (en) * | 2020-01-20 | 2020-05-12 | 江苏晶曌半导体有限公司 | Based on MoS2Thin layer ultraviolet light-emitting diode and manufacturing method thereof |
| CN111710762A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
| CN111816740A (en) * | 2020-08-28 | 2020-10-23 | 北京蓝海创芯智能科技有限公司 | Structure for improving hole injection efficiency of AlGaN-based deep ultraviolet LED |
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| CN111129243B (en) * | 2019-12-02 | 2024-05-17 | 晶能光电股份有限公司 | GaN-based ultraviolet LED epitaxial structure |
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| WO2016197650A1 (en) * | 2015-06-08 | 2016-12-15 | 中国科学院半导体研究所 | Dopant-free algan-based ultraviolet light emitting diode and preparation method thereof |
| CN106920739A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院宁波材料技术与工程研究所 | A kind of epitaxial growth Al based on gradient lamination buffer layer thin filmmGa1‑mThe method of N |
| CN108305907A (en) * | 2018-01-26 | 2018-07-20 | 中国电子科技集团公司第三十八研究所 | A kind of novel homojunction PIN ultraviolet detectors |
| CN111146318A (en) * | 2020-01-20 | 2020-05-12 | 江苏晶曌半导体有限公司 | Based on MoS2Thin layer ultraviolet light-emitting diode and manufacturing method thereof |
| CN111710762A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
| CN111816740A (en) * | 2020-08-28 | 2020-10-23 | 北京蓝海创芯智能科技有限公司 | Structure for improving hole injection efficiency of AlGaN-based deep ultraviolet LED |
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| WO2016197650A1 (en) | 2016-12-15 |
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