CN205264741U

CN205264741U - GaN -based LED epitaxial wafer

Info

Publication number: CN205264741U
Application number: CN201521094171.1U
Authority: CN
Inventors: 刘波; 尹甲运; 白欣娇; 袁凤坡; 王波; 潘鹏; 汪灵; 周晓龙; 王静辉
Original assignee: CETC 13 Research Institute
Current assignee: CETC 13 Research Institute
Priority date: 2015-12-26
Filing date: 2015-12-26
Publication date: 2016-05-25
Anticipated expiration: 2025-12-26

Abstract

The utility model discloses a gaN -based LED epitaxial wafer relates to and uses the device technical field of semiconductor as the characteristic. The epitaxial wafer includes: 4 the inch silicon substrate, 4 the upper surface from the bottom up of inch silicon substrate is alNAlGaN buffer layer, involuntary doping U type gaN layer, silicon doping N type gaN layer, the multiple quantum well radiation layer of inGaNGaN, low temperature P type gaN layer, P type superlattice alInGaNInGaN electron barrier layer and high temperature P type gaN layer in proper order. The epitaxial wafer has promoted and has poured into LED's smooth output down into at big current density, and nearlyer 5%~10% than the epitaxial wafer light output of traditional P -AlGaN potential barrier structure has improved, LED chip antistatic effect also improved nearly 3%~6% the while.

Description

GaN base LED epitaxial wafer

Technical field

The utility model relates to the device technology field taking semiconductor as feature, relates in particular to a kind of GaN base LED epitaxial wafer.

Background technology

LED is a kind of solid-state semiconductor device that electric energy is converted into luminous energy, with respect to conventional light source, LED has that volume is little, long service life, fast response time, feature that luminous efficiency is high, and therefore LED becomes a kind of novel green light source getting most of the attention and enters lighting field. But there is the problem of luminous efficiency decay in LED under large electric current injects, and limited to a certain extent exploitation high-power, high-brightness LED, also restricted the development of LED in general illumination field.

Utility model content

Technical problem to be solved in the utility model is to provide a kind of GaN base LED epitaxial wafer, described epitaxial wafer has promoted the optical output power of LED under high current density injects, improved closely 5%～10% than the epitaxial wafer optical output power of traditional P-AlGaN barrier structure, LED chip antistatic effect has also improved nearly 3%～6% simultaneously.

For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of GaN base LED epitaxial wafer, it is characterized in that comprising: 4 inches of silicon substrates, the upper surface of described 4 inches of silicon substrates is followed successively by AlN/AlGaN cushion, the U-shaped GaN layer of involuntary doping, silicon doping N-type GaN layer, InGaN/GaN multiple quantum trap luminescent layer, low temperature P type GaN layer, P type superlattices AlInGaN/InGaN electronic barrier layer and high temperature P type GaN layer from top to bottom.

Further technical scheme is: described its periodicity of P type superlattices AlInGaN/InGaN electronic barrier layer is 3～10 pairs.

The beneficial effect that adopts technique scheme to produce is: due to the insertion of P type superlattices AlInGaN/InGaN layer, can improve the barrier height of Multiple-quantum potential barrier (MQB), limit electronics overflowing from active luminous zone, being suppressed at large electric current injects lower electronics to overflow to P type barrier region non-radiative compound with hole generation, thereby avoid high current density to inject the phenomenon that lower luminous efficiency declines, simultaneously by P type superlattices AlInGaN/InGaN electronic barrier layer, improve LED chip antistatic effect, realize LED the increasing substantially of ESD under large electric current injects.

Brief description of the drawings

Fig. 1 is the structural representation of epitaxial wafer described in the utility model;

Wherein: 1,4 inches of silicon substrates 2, AlN/AlGaN cushion 3, U-shaped GaN layer 4, N-type GaN layer 5, InGaN/GaN multiple quantum trap luminescent layer 6, low temperature P type GaN layer 7, P type superlattices AlInGaN/InGaN electronic barrier layer 8, high temperature P type GaN layer.

Detailed description of the invention

Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present utility model, instead of whole embodiment. Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.

A lot of details are set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to the utility model intension in the situation that, and therefore the utility model is not subject to the restriction of following public specific embodiment.

As shown in Figure 1, the utility model discloses a kind of GaN base LED epitaxial wafer, comprise: 4 inches of silicon substrates 1, the upper surface of described 4 inches of silicon substrates 1 is followed successively by AlN/AlGaN cushion 2, the U-shaped GaN layer 3 of involuntary doping, silicon doping N-type GaN layer 4, InGaN/GaN multiple quantum trap luminescent layer 5, low temperature P type GaN layer 6, P type superlattices AlInGaN/InGaN electronic barrier layer 7 and high temperature P type GaN layer 8 from top to bottom. The periodicity of wherein said P type superlattices AlInGaN/InGaN electronic barrier layer 7 is 3～10 pairs.

Above-mentioned GaN base LED epitaxial wafer preparation method, comprises the steps: at the upper surface of 4 inches of silicon substrates 1 growing AIN/AlGaN cushion 2, the U-shaped GaN layer 3 of involuntary doping, silicon doping N-type GaN layer 4, InGaN/GaN multiple quantum trap luminescent layer 5, low temperature P type GaN layer 6, P type superlattices AlInGaN/InGaN electronic barrier layer 7 and high temperature P type GaN layer 8 successively from top to bottom.

Due to the insertion of P type superlattices AlInGaN/InGaN electronic barrier layer, can improve the barrier height of Multiple-quantum potential barrier (MQB), limit electronics overflowing from active luminous zone, be suppressed at large electric current inject lower electronics overflow to P type barrier region and hole occur non-radiative compound, thereby avoid high current density to inject the phenomenon of lower luminous efficiency decline. Under normal circumstances, there are a lot of difficulties in the growth of P type superlattices AlInGaN/InGaN electronic barrier layer, and as of poor quality in material crystals, lattice mismatch and magnesium doping activation efficiency rate are low etc. The utility model is by the impact of the key factors such as flow on P type superlattices AlInGaN/InGaN electronic barrier layer Al component, In component and Mg doping of growth temperature, growth pressure and trimethyl aluminium (TMAl), trimethyl indium (TMIn).

Find by optimization, Al composition flow rate is between 50～100, In composition flow rate can be limited to electronics well SQW region and keep high material crystals quality between 30～300, and growth temperature also remains between 800～1000 ° of C, and solve the low and hole of P type superlattices AlInGaN/InGaN electronic barrier layer doping efficiency and injected not enough problem by reducing the method for TMGa flow, the P type superlattices AlInGaN/InGaN electronic barrier layer of growing under optimal conditions, greatly improve the probability of electronics in quantum well region and hole generation radiation recombination, promote the optical output power of LED under high current density injects, epitaxial wafer optical output power than traditional P-AlGaN barrier structure has improved nearly 5%～10%, LED chip antistatic effect has also improved nearly 3%～6% simultaneously.

Claims

1. a GaN base LED epitaxial wafer, it is characterized in that comprising: 4 inches of silicon substrates (1), the upper surface of described 4 inches of silicon substrates (1) is followed successively by AlN/AlGaN cushion (2), the U-shaped GaN layer of involuntary doping (3), silicon doping N-type GaN layer (4), InGaN/GaN multiple quantum trap luminescent layer (5), low temperature P type GaN layer (6), P type superlattices AlInGaN/InGaN electronic barrier layers (7) and high temperature P type GaN layer (8) from top to bottom.

2. GaN base LED epitaxial wafer as claimed in claim 1, is characterized in that comprising: the periodicity of described P type superlattices AlInGaN/InGaN electronic barrier layers (7) is 3～10 pairs.