CN108666398A - A kind of LED epitaxial structure and its growing method - Google Patents
A kind of LED epitaxial structure and its growing method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
The present invention relates to a kind of LED epitaxial structure and its growing methods, include substrate, buffer layer, N-type GaN layer, mqw layer, p-type GaN layer successively from the bottom to top, p-type GaN layer includes LP layers and HP layers successively from the bottom to top, current barrier layer is equipped between mqw layer and LP layers, current barrier layer is constituted by AlInGaN barrier layers and InGaN potential well layers are periodically alternately stacked.Current barrier layer is designed to the superlattice structure being made of periodical AlInGaN/InGaN by the present invention by traditional AlGaN single layer structures, and it is positioned between mqw layer and LP layers and grows, it effectively prevents electronics and is spilled over to p type island region, electronics is avoided to be combined to generate the phenomenon that non-radiative recombination reduces luminous intensity with the hole of p type island region；Be conducive to the extension in hole, hole concentration can be significantly improved, epitaxial crystal luminous efficiency is made to promote 8.5% or so；Lattice mismatch is small, significantly improves crystal quality.
Description
Technical field
The present invention relates to a kind of LED epitaxial structure and its growing methods, belong to epitaxial growth structure technical field.
Background technology
GaN material has the series of advantages such as broad-band gap, high electron mobility, high heat conductance, high stability, therefore in height
In the power electronic components such as brightness blue light emitting diode, blue semiconductor laser and radioresistance, high frequency, high temperature, high pressure
There are extensive practical application and huge market prospects.Light emitting diode has the advantages that small, efficient and long lifespan,
It has a wide range of applications in fields such as total colouring, backlight, signal lamps, is increasingly becoming current electron electric power area research
Hot spot.
Illumination market and backlight market propose new requirement to high brightness, the strong light efficiency of LED chip, and in epitaxial growth and
The internal quantum efficiency of LED and external quantum efficiency how are improved in chip technology processing procedure becomes the hot spot that each family falls over each other research.Effectively
Electric current injection, maximized electron-hole recombinations, are the key that LED quantum efficiencies.Therefore, in epitaxial growth and chip technology
In, it can all try every possible means electric current most intensive below electrode to surrounding uniform expansion as far as possible, so that effectively light region model
Expansion is enclosed, thus the concept of current barrier layer is also got.But electron amount and the migration of traditional GaN base light emitting
Rate is much larger than hole, leads to still have a large amount of excess electrons after the completion of multi-quantum well luminescence layer is compound, these electronics are easy to overflow
It is combined with hole in p-type, generates non-radiative recombination, reduced the number of cavities of injection multi-quantum well luminescence layer, lead to luminous efficiency
With intensity decline and the generation of efficiency droop.It is spilled over to p-type in order to reduce electronics, is generally growing low temperature P
One layer of AlGaN current barrier layer of growth after type GaN layer (i.e. LP layers, general p-type GaN points three layers, first layer is LP layers), but by
After the current barrier layer is set to LP layers, electronics spilling is still difficult to avoid that.
It is known that Mg is the important element of p-type doping, due to the passivation effect of Mg, with MOCVD technology growth p-types GaN
When, acceptor's Mg atoms are seriously passivated in growth course by H (hydrogen atom), so as to cause untreated GaN：Mg resistivity is high
Up to 10 Ω m, so the p-type GaN that can be applied to device must can just be obtained after growth to Mg into line activating.The prior art
The method for improving activation efficiency of the Mg atoms in gallium nitride is：Then high growth temperature p-GaN anneals under nitrogen atmosphere again, though
P-type GaN so can be successfully obtained using rapid thermal anneal methods, but obtained hole concentration is still relatively low, representative value is
2x1017cm-3, the 2-3 order of magnitude lower than theoretical doping concentration.
Traditional current barrier layer is to be made of AlGaN single layer structures, and the structure is located at the second layer of p-type GaN layer, i.e.,
After LP layers, before HP layers (i.e. high temperature p-type GaN layer), totally three layers of p-type GaN layer in the epitaxial structure of the structure growth：First LP
Layer, the second current barrier layer, the 3rd HP layers, as shown in Fig. 2, this structure setting make electronics be easy to overflow Quantum well active district and
It reaches LP layers and is combined generation non-radiative recombination with hole, waste electron amount, reduce crystallo-luminescence intensity；Simultaneously because hole is primary
Displacement distance is shorter, and this structure setting makes the hole of HP layers of generation be reduced to LP layers of locomotivity, reduces crystallo-luminescence efficiency；
In addition to this current barrier layer formed by AlGaN single layer structures keeps the lattice mismatch of crystal big, be easy to cause epitaxial wafer fracture.
Therefore, how to improve the hole concentration in MQW and electronics is avoided to be overflowed from mqw layer, become LED epitaxial growths
The key of technology.
Disclosed in Chinese patent literature CN105514226A《A kind of light emitting diode and its making with current barrier layer
Method》In, using directly on epitaxial structure, the undoped AlN materials of epitaxial growth are as current barrier layer, to reach effective
Enhance the effect of LED P-type current expansion.But it grows, can not stop since the layer is disposed on p-type GaN layer
Electronics overflow problem in MQW, while to increasing hole mobile quantity unobvious into MQW, can not fundamentally solve in MQW
Hole concentration problem.
Invention content
In view of the deficiencies of the prior art, the present invention provides a kind of LED epitaxial structure, by the structure to current barrier layer with
And growth position is designed change, which effectively can avoid electronics from being spilled over to p-type, be conducive to extending, significantly carrying for hole
High hole concentration, promotes epitaxial crystal luminous efficiency and lattice mismatch is small, successfully solves current barrier layer in the prior art and (sets
Set among p-type) blocking electronics spill-over effects are poor, limit the extended capability in hole and caused by the low difficulty of epitaxial wafer luminous efficiency
Topic.
The present invention also provides the growing methods of above-mentioned LED epitaxial structure；
Term is explained：
1, mqw layer, Quantum well active district；
2, LP layers, low temperature p-type GaN layer；
3, HP layers, high temperature p-type GaN layer；
4, Cp2Mg, two luxuriant magnesium.
The technical scheme is that：
A kind of LED epitaxial structure, from the bottom to top successively include substrate, buffer layer, N-type GaN layer, mqw layer, p-type GaN layer,
The p-type GaN layer includes LP layer and HP layers successively from the bottom to top, the mqw layer and it is LP layers described between equipped with current barrier layer.
Current barrier layer is arranged between mqw layer and LP layers in the present invention, i.e., after position being advanced to mqw layer, this
Sample is just avoided that the electronics in the areas N overflows mqw layer, stops that the effect of electronics is more preferable, the structure setting in the present invention makes LP layers and HP
Layer is located next to, and shortens the displacement distance in hole, ensure that the quantity in hole, improves hole concentration；Make electronics with hole in MQW
In composite effect it is best, improve the luminous efficiency of crystal.
According to currently preferred, the current barrier layer is by AlInGaN barrier layers and InGaN potential well layer period sexual intercourses
For overlapping.
Traditional current barrier layer is made of AlGaN single layer structures, and the present invention uses AlInGaN barrier layers and InGaN
The periodically alternately stacked composition of potential well layer, reason is that mqw layer is mainly made of InGaN and GaN, if mono- using AlGaN
Layer structure does current barrier layer, because lacking In elements in AlGaN layer, the lattice mismatch of crystal will certainly be made big, popular to say, i.e.,
The element of mqw layer and current barrier layer mismatches, if periodically alternately heavy using AlInGaN barrier layers and InGaN potential well layers
Stack structure can greatly improve lattice match, i.e. the element repetitive rate of mqw layer and current barrier layer is high, similarly, AlGaN single layers
Current barrier layer and LP layers of lattice mismatch it is big, AlInGaN barrier layers and the periodically alternately stacked structure of InGaN potential well layers with
LP layers of lattice match are high.
It promotes epitaxial crystal luminous efficiency and lattice mismatch is small, improve crystal quality.
According to currently preferred, the period of the current barrier layer is 5-10.
According to currently preferred, in signal period, the thickness of the AlInGaN barrier layers and the InGaN potential well layers
Than being 2:1-3:1.
According to currently preferred, the thickness of the current barrier layer is 0.03-0.06 μm；The AlInGaN barrier layers
Thickness be 0.005-0.006 μm；The thickness of the InGaN potential well layers is 0.002-0.003 μm.
The periodicity setting of current barrier layer, the thickness ratio of AlInGaN barrier layers and InGaN potential well layers limit, each thickness
The setting of degree connects each other and coordinates, and the content of AL elements can be made to play blocking electronics best results, while again can be with
Mqw layer and LP layers of lattice match reach best.
According to currently preferred, the thickness of the N-type GaN layer is 3-4 μm, and the thickness of the p-type GaN layer is 0.16-
0.24 μm, the mqw layer is that periodically alternately superposition is constituted by InGaN potential well layers and GaN barrier layers.
According to currently preferred, the period of the mqw layer is 8-15, and the thickness of the mqw layer is 0.1-0.3 μm, institute
The thickness for stating InGaN potential well layers is 0.002-0.02 μm, and the thickness of the GaN barrier layers is 0.005-0.025 μm.
The growing method of above-mentioned LED epitaxial structure, including use MOCVD methods grown epitaxial layer on substrate, step packet
It includes as follows：
(1) buffer layer, N-type GaN layer and mqw layer are grown successively over the substrate；
(2) current barrier layer is grown on the mqw layer, is specifically included：
800-900 DEG C is adjusted the temperature to, 30000-50000sccm is passed through into the reative cell that pressure is 300-800mbar
NH3, the sources 20-30sccm TMGa, 150-200sccm TMAl and 1500-2000sccm TMIn, the time continues 50-100
Second, grow the current barrier layer, in the TMAl, the doping concentration of Al is 1E+17-1E+18atom/cm3, the TMIn
In, the doping concentration of In is 1E+18-1E+19atom/cm3；
(3) the p-type GaN layer is grown on the current barrier layer：First grow LP layers, HP layers of regrowth.
According to currently preferred, the step (1), including it is as follows：
1. it is 900-1050 DEG C to adjust reaction chamber temperature, the buffering that growth thickness is 1.5-3 μm over the substrate
Layer；
2. it is 1000-1250 DEG C to adjust reaction chamber temperature, the N-type that growth thickness is 3-4 μm on the buffer layer
GaN layer；
3. keeping reaction chamber temperature, the mqw layer is grown in the N-type GaN layer.
According to currently preferred, the step (3), including it is as follows：
4. it is 600-700 DEG C to adjust reaction chamber temperature, maintains pressure constant, be passed through the NH of 55000-65000sccm3、25-
The doping concentration in the sources TMGa of 50sccm and the sources Cp2Mg of 2000-3000sccm, Mg is 1E+19-1E+20atom/cm3, formed
The low temperature p-type GaN layer that thickness is 0.1-0.15 μm, i.e. LP layers；
5. it is 900-1050 DEG C to adjust reaction chamber temperature, it is passed through the NH of 30000-60000sccm3, 30-50sccm
The doping concentration of the Cp2Mg of TMGa, 1000-1500sccm, Mg are 1E+18-1E+17atom/cm3, growth thickness 0.06-
0.09 μm of high temperature p-type GaN layer, i.e. HP layers.
Beneficial effects of the present invention are：
Current barrier layer is designed to by traditional AlGaN single layer structures by periodical AlInGaN/InGaN groups by the present invention
At superlattice structure, while being grown after the current barrier layer of the structure is set to mqw layer, before LP layers, by this
The change of structure design and growth position can effectively avoid electronics and be spilled over to p type island region, and the hole of electronics and p type island region is avoided to tie
It closes to generate the phenomenon that non-radiative recombination reduces luminous intensity；Be conducive to the extension in hole, hole concentration can be significantly improved,
Epitaxial crystal luminous efficiency is set to promote 8.5% or so；Lattice mismatch is small, significantly improves crystal quality.
Description of the drawings
Fig. 1 is the schematic diagram of LED epitaxial structure of the present invention.
Fig. 2 is the schematic diagram of traditional LED epitaxial structure.
Fig. 3 is that electronics flows to sum number amount situation schematic diagram with hole in Quantum Well in traditional LED epitaxial structure.
Fig. 4 is that electronics flows to sum number amount situation schematic diagram with hole in Quantum Well in LED epitaxial structure of the present invention.
Fig. 5 is the structural schematic diagram of current barrier layer of the present invention.
Fig. 6 is the brightness contrast tendency chart using epitaxial structure of the present invention and traditional LED epitaxial structure.
1, substrate, 2, buffer layer, 3, N-type GaN layer, 4, mqw layer, 5, current barrier layer, 6, p-type GaN layer, 7, LP layers, 8,
HP layers, 9, conventional current barrier layer；10, electronics；11, hole；12, AlInGaN barrier layers；13, InGaN potential well layers.
Specific implementation mode
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of LED epitaxial structure, as shown in Figure 1, including substrate 1, buffer layer 2, N-type GaN layer 3, MQW successively from the bottom to top
Layer 4, p-type GaN layer 6, p-type GaN layer 6 includes successively from the bottom to top LP layers 7 and HP layers 8, between the mqw layer 4 and LP layers 7
Equipped with current barrier layer 5.Compared with the traditional LED epitaxial structures of Fig. 2, the present embodiment by the growth position of current barrier layer 5 into
Row change, is grown by growth changing between the LP layers 7 and HP layers 8 of traditional setting between mqw layer 4 and LP layers 7.
In LED epitaxial structure traditional Fig. 2, current barrier layer 9 is formed by AlGaN single layer structures.Current barrier layer 5 is
It is constituted by AlInGaN barrier layers 12 and InGaN potential well layers 13 are periodically alternately stacked, as shown in figure 5, the week of current barrier layer 5
Phase is 7.The thickness of current barrier layer 5 is 0.05 μm；The thickness of AlInGaN barrier layers 12 is 0.006 μm；InGaN potential well layers 13
Thickness be 0.003 μm.
Fig. 3 is electronics 10 and hole 11 flow direction and quantity situation in Quantum Well in the traditional LED epitaxial structures of Fig. 2.Fig. 4 is
Electronics 10 and hole 11 flow to and quantity situation in Quantum Well in the present embodiment epitaxial structure.Compared with Fig. 3, mqw layer 4 in Fig. 4
In 11 quantity of hole far more than 11 quantity of hole in mqw layer in Fig. 34.
Definition uses the present embodiment epitaxial structure for sample 1, and LED epitaxial structure traditional Fig. 2 is sample 2, to both
Sample carries out photoelectric parameter measurement.Fig. 6 is the brightness contrast tendency chart of sample 1 and sample 2, it can be clearly seen that, sample 1 it is bright
Degree is higher by 8.5% or so than sample 2.
Embodiment 2
According to a kind of LED epitaxial structure described in embodiment 1, difference lies in the period of current barrier layer 5 is 5.Electric current
The thickness on barrier layer 5 is 0.03 μm；The thickness of AlInGaN barrier layers 12 is 0.005 μm；The thickness of InGaN potential well layers 13 is
0.002μm。
Embodiment 3
According to a kind of LED epitaxial structure described in embodiment 1, difference lies in the period of current barrier layer 5 is 10.Electricity
The thickness of flow barrier 5 is 0.06 μm；The thickness of AlInGaN barrier layers 12 is 0.006 μm；The thickness of InGaN potential well layers 13 is
0.003μm。
Embodiment 4
The growing method of LED epitaxial structure described in embodiment 1-3, including use MOCVD methods are grown outside on substrate 1
Prolong layer, including steps are as follows：
(1) substrate 1 is put into the reative cell of MOCVD device, the pressure of reaction chamber is 80-180mbar, and temperature is
1100-1300 DEG C, substrate 1 is carried out using hydrogen as carrier gas and is surface-treated, which is 10-15 minutes；
(2) grown buffer layer 2, N-type GaN layer 3 and mqw layer 4 successively on substrate 1；Including as follows：
1. reaction chamber pressure is down to 50-100mbar, temperature is down to 900-1050 DEG C, growth thickness is on substrate 1
1.5-3 μm of buffer layer 2；
2. by reaction, cavity pressure increases to 300-800mbar, temperature increases to 1000-1250 DEG C, grows on the buffer layer 2
The N-type GaN layer 3 that thickness is 3 μm -4 μm；
3. cooling the temperature to 600-850 DEG C, it is passed through the sources TMIn of 1200-1500sccm and the sources TMGa of 25-40sccm, week
Phase property grows InGaN/GaN multi-quantum well active region layers, i.e. mqw layer 4, and the periodicity of InGaN/GaN is 8-15, the thickness of mqw layer 4
Degree is 0.1 μm -0.3 μm, and InGaN potential well layer thickness is 0.002-0.02 μm, and the thickness of GaN barrier layers is 0.005-0.025 μm,
The doping concentration of In is 1E+19-3E+20atom/cm3。
(3) current barrier layer 5 is grown on mqw layer 4, is specifically included：
800-900 DEG C is adjusted the temperature to, 30000-50000sccm is passed through into the reative cell that pressure is 300-800mbar
NH3, the sources 20-30sccm TMGa, 150-200sccm TMAl and 1500-2000sccm TMIn, the time continues 50-100
Second, current barrier layer 5 is grown, in MAl, the doping concentration of Al is 1E+17-1E+18atom/cm3, in TMIn, the doping of In is dense
Degree is 1E+18-1E+19atom/cm3；
(4) the growth P-type GaN layer 6 on current barrier layer 5：First growth LP layers 7, regrowth HP layers 8.Including as follows：
4. it is 600-700 DEG C to adjust reaction chamber temperature, maintains pressure constant, be passed through the NH of 55000-65000sccm3、25-
The doping concentration in the sources TMGa of 50sccm and the sources Cp2Mg of 2000-3000sccm, Mg is 1E+19-1E+20atom/cm3, formed
The low temperature p-type GaN layer that thickness is 0.1-0.15 μm, i.e. LP layers 7；
5. it is 900-1050 DEG C to adjust reaction chamber temperature, it is passed through the NH of 30000-60000sccm3, 30-50sccm
The doping concentration of the Cp2Mg of TMGa, 1000-1500sccm, Mg are 1E+18-1E+17atom/cm3, growth thickness 0.06-
0.09 μm of high temperature p-type GaN layer, i.e. HP layers 8.
Claims (10)
1. a kind of LED epitaxial structure includes substrate, buffer layer, N-type GaN layer, mqw layer, p-type GaN layer, institute successively from the bottom to top
It includes LP layer and HP layer successively to state p-type GaN layer from the bottom to top, which is characterized in that the mqw layer and it is LP layers described between equipped with electric
Flow barrier.
2. a kind of LED epitaxial structure according to claim 1, which is characterized in that the current barrier layer is by AlInGaN
Barrier layer and the periodically alternately stacked composition of InGaN potential well layers.
3. a kind of LED epitaxial structure according to claim 2, which is characterized in that the period of the current barrier layer is 5-
10。
4. a kind of LED epitaxial structure according to claim 2, which is characterized in that in signal period, the AlInGaN gesture
The thickness ratio of barrier layer and the InGaN potential well layers is 2:1-3:1.
5. a kind of LED epitaxial structure according to claim 2, which is characterized in that the thickness of the current barrier layer is
0.03-0.06μm；The thickness of the AlInGaN barrier layers is 0.005-0.006 μm；The thickness of the InGaN potential well layers is
0.002-0.003μm。
6. a kind of LED epitaxial structure according to claim 1, which is characterized in that the thickness of the N-type GaN layer is 3-4 μ
The thickness of m, the p-type GaN layer are 0.16-0.24 μm, and the mqw layer is by InGaN potential well layers and GaN barrier layer period sexual intercourses
It is constituted for superposition.
7. a kind of LED epitaxial structure according to claim 6, which is characterized in that the period of the mqw layer is 8-15, institute
The thickness for stating mqw layer is 0.1-0.3 μm, and the thickness of the InGaN potential well layers is 0.002-0.02 μm, the GaN barrier layers
Thickness is 0.005-0.025 μm.
8. the growing method of any LED epitaxial structures of claim 1-7, including given birth on substrate using MOCVD methods
Long epitaxial layer, which is characterized in that step includes as follows：
(1) buffer layer, N-type GaN layer and mqw layer are grown successively over the substrate；
(2) current barrier layer is grown on the mqw layer, is specifically included：
800-900 DEG C is adjusted the temperature to, the NH of 30000-50000sccm is passed through into the reative cell that pressure is 300-800mbar3、
The sources 20-30sccm TMGa, 150-200sccm TMAl and 1500-2000sccm TMIn, the time continues 50-100 seconds, grows
The current barrier layer, in the TMAl, the doping concentration of Al is 1E+17-1E+18atom/cm3, in the TMIn, In's mixes
Miscellaneous a concentration of 1E+18-1E+19atom/cm3；
(3) the p-type GaN layer is grown on the current barrier layer：First grow LP layers, HP layers of regrowth.
9. the growing method of LED epitaxial structure according to claim 8, which is characterized in that the step (1), including such as
Under：
1. it is 900-1050 DEG C to adjust reaction chamber temperature, the buffer layer that growth thickness is 1.5-3 μm over the substrate；
2. it is 1000-1250 DEG C to adjust reaction chamber temperature, the N-type GaN that growth thickness is 3-4 μm on the buffer layer
Layer；
3. keeping reaction chamber temperature, the mqw layer is grown in the N-type GaN layer.
10. the growing method of LED epitaxial structure according to claim 8, which is characterized in that the step (3), including such as
Under：
4. it is 600-700 DEG C to adjust reaction chamber temperature, maintains pressure constant, be passed through the NH of 55000-65000sccm3、25-
The doping concentration in the sources TMGa of 50sccm and the sources Cp2Mg of 2000-3000sccm, Mg is 1E+19-1E+20atom/cm3, formed
The low temperature p-type GaN layer that thickness is 0.1-0.15 μm, i.e. LP layers；
5. it is 900-1050 DEG C to adjust reaction chamber temperature, it is passed through the NH of 30000-60000sccm3, 30-50sccm TMGa,
The doping concentration of the Cp2Mg of 1000-1500sccm, Mg are 1E+18-1E+17atom/cm3, growth thickness is 0.06-0.09 μm
High temperature p-type GaN layer, i.e. HP layers.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085712A (en) * | 2019-04-30 | 2019-08-02 | 芜湖德豪润达光电科技有限公司 | Light emitting diode and forming method thereof |
| CN117317086A (en) * | 2022-10-24 | 2023-12-29 | 淮安澳洋顺昌光电技术有限公司 | Light emitting diode |
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