CN105324939B - Rc-igbt开关脉冲控制 - Google Patents
Rc-igbt开关脉冲控制 Download PDFInfo
- Publication number
- CN105324939B CN105324939B CN201380075378.1A CN201380075378A CN105324939B CN 105324939 B CN105324939 B CN 105324939B CN 201380075378 A CN201380075378 A CN 201380075378A CN 105324939 B CN105324939 B CN 105324939B
- Authority
- CN
- China
- Prior art keywords
- igbt
- output current
- terminal
- electrically connected
- amplitude
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000008859 change Effects 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 238000004146 energy storage Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000004044 response Effects 0.000 description 10
- 238000004590 computer program Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 235000013399 edible fruits Nutrition 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000011022 operating instruction Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2013/057218 WO2014161600A1 (en) | 2013-04-05 | 2013-04-05 | Rc-igbt switching pulse control |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105324939A CN105324939A (zh) | 2016-02-10 |
CN105324939B true CN105324939B (zh) | 2018-04-24 |
Family
ID=48048060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380075378.1A Active CN105324939B (zh) | 2013-04-05 | 2013-04-05 | Rc-igbt开关脉冲控制 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9831865B2 (zh) |
EP (1) | EP2982039B1 (zh) |
JP (1) | JP6333358B2 (zh) |
CN (1) | CN105324939B (zh) |
WO (1) | WO2014161600A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3041137B1 (en) * | 2014-12-29 | 2020-02-12 | ABB Schweiz AG | Control of reverse-conducting igbt |
FR3056859B1 (fr) * | 2016-09-23 | 2018-11-30 | Alstom Transport Technologies | Procede de pilotage d'un transistor du type igbt et dispositif de pilotage associe |
EP3539215B1 (en) * | 2016-11-14 | 2020-01-22 | ABB Schweiz AG | Switching of paralleled reverse conducting igbt and wide bandgap switch |
JP2020109901A (ja) | 2019-01-04 | 2020-07-16 | 株式会社東芝 | 制御回路、半導体装置及び電気回路装置 |
JP7319500B2 (ja) | 2019-01-04 | 2023-08-02 | 株式会社東芝 | 制御回路、半導体装置及び電気回路装置 |
CN110224597B (zh) * | 2019-03-06 | 2020-11-06 | 湖南大学 | 一种rc-igbt型储能变换器的驱动控制方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3133964B2 (ja) * | 1997-07-31 | 2001-02-13 | 助川電気工業株式会社 | 絶縁ゲートドライブ回路 |
EP1455440A2 (en) * | 2003-02-12 | 2004-09-08 | Toyoda Koki Kabushiki Kaisha | Drive voltage generating apparatus and method for controlling the same |
CN102148496A (zh) * | 2010-02-05 | 2011-08-10 | 西门子公司 | 限制功率控制元件的过载-和短路电流的方法和所属装置 |
CN102324918A (zh) * | 2011-06-09 | 2012-01-18 | 深圳市英威腾电气股份有限公司 | 一种绝缘栅双极型晶体管驱动电路 |
CN102498668A (zh) * | 2009-09-15 | 2012-06-13 | 三菱电机株式会社 | 栅极驱动电路 |
DE102011003938A1 (de) * | 2011-02-10 | 2012-08-16 | Siemens Aktiengesellschaft | Verfahren zur Steuerung zweier elektrisch in Reihe geschalteter rückwärts leitfähiger IGBTs einer Halbbrücke |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5012737B2 (ja) | 2007-09-05 | 2012-08-29 | 株式会社デンソー | 半導体装置 |
DE102008045410B4 (de) | 2007-09-05 | 2019-07-11 | Denso Corporation | Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode |
DE102009001029B4 (de) | 2009-02-20 | 2010-12-09 | Infineon Technologies Ag | Ansteuerung für rückwärtsleitfähigen IGBT |
DE102009030738A1 (de) | 2009-06-26 | 2010-12-30 | Siemens Aktiengesellschaft | Verfahren zur Ansteuerung eines rückwärts leitfähigen IGBT |
DE102009030740A1 (de) | 2009-06-26 | 2010-12-30 | Siemens Aktiengesellschaft | Kommutierungsverfahren einer Stromrichterphase mit rückwärts leitfähigen IGBTs |
DE102009030739A1 (de) | 2009-06-26 | 2010-12-30 | Siemens Aktiengesellschaft | Verfahren zur Ansteuerung eines rückwärts leitfähigen IGBT |
JP5510339B2 (ja) * | 2011-01-06 | 2014-06-04 | 株式会社デンソー | 負荷駆動回路 |
US20130049843A1 (en) * | 2011-08-26 | 2013-02-28 | Mari Curbelo Alvaro Jorge | Reverse conduction mode self turn-off gate driver |
US8471600B2 (en) * | 2011-09-30 | 2013-06-25 | Infineon Technologies Ag | Detection of the zero crossing of the load current in a semiconductor device |
JP5532062B2 (ja) * | 2012-02-13 | 2014-06-25 | 株式会社デンソー | 逆導通スイッチング素子の駆動装置 |
-
2013
- 2013-04-05 CN CN201380075378.1A patent/CN105324939B/zh active Active
- 2013-04-05 JP JP2016505715A patent/JP6333358B2/ja active Active
- 2013-04-05 EP EP13714308.7A patent/EP2982039B1/en active Active
- 2013-04-05 US US14/774,026 patent/US9831865B2/en active Active
- 2013-04-05 WO PCT/EP2013/057218 patent/WO2014161600A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3133964B2 (ja) * | 1997-07-31 | 2001-02-13 | 助川電気工業株式会社 | 絶縁ゲートドライブ回路 |
EP1455440A2 (en) * | 2003-02-12 | 2004-09-08 | Toyoda Koki Kabushiki Kaisha | Drive voltage generating apparatus and method for controlling the same |
CN102498668A (zh) * | 2009-09-15 | 2012-06-13 | 三菱电机株式会社 | 栅极驱动电路 |
CN102148496A (zh) * | 2010-02-05 | 2011-08-10 | 西门子公司 | 限制功率控制元件的过载-和短路电流的方法和所属装置 |
DE102011003938A1 (de) * | 2011-02-10 | 2012-08-16 | Siemens Aktiengesellschaft | Verfahren zur Steuerung zweier elektrisch in Reihe geschalteter rückwärts leitfähiger IGBTs einer Halbbrücke |
CN102324918A (zh) * | 2011-06-09 | 2012-01-18 | 深圳市英威腾电气股份有限公司 | 一种绝缘栅双极型晶体管驱动电路 |
Also Published As
Publication number | Publication date |
---|---|
CN105324939A (zh) | 2016-02-10 |
JP2016522661A (ja) | 2016-07-28 |
US20160020764A1 (en) | 2016-01-21 |
EP2982039B1 (en) | 2018-08-08 |
JP6333358B2 (ja) | 2018-05-30 |
US9831865B2 (en) | 2017-11-28 |
EP2982039A1 (en) | 2016-02-10 |
WO2014161600A1 (en) | 2014-10-09 |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180509 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210617 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231229 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
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TR01 | Transfer of patent right |