CN105315673A - High-insulation silica gel plate - Google Patents
High-insulation silica gel plate Download PDFInfo
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- CN105315673A CN105315673A CN201510893871.5A CN201510893871A CN105315673A CN 105315673 A CN105315673 A CN 105315673A CN 201510893871 A CN201510893871 A CN 201510893871A CN 105315673 A CN105315673 A CN 105315673A
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Abstract
The invention discloses a high-insulation silica gel plate prepared from the following raw materials in parts by weight: 65-80 parts of organic silicon rubber, 8-15 parts of silicon oil containing activated hydrogen, 10-15 parts of low-density polyethylene, 2-5 parts of nano-zinc oxide, 4-6 parts of carbon black N330, 3-5 parts of barium sulfate, 5-6 parts of mica, 5-8 parts of ceramic powder, 5-6.5 parts of sulfur, 0.5-1.5 parts of a crosslinking agent DCP, 1-4 parts of vinyltriethoxysilane, 1.5-2.5 parts of an antioxidant and 2-5 parts of a surfactant. In such a way, the insulation degree of the high-insulation silica gel plate disclosed by the invention is 2-3 times higher than that of a silica gel plate in the prior art, and the high-insulation silica gel plate can be used for sealing or paving places with high insulation requirements and is safe and reliable in use and economic and practical in price.
Description
Technical field
The present invention relates to silica-gel plate, particularly relate to a kind of high Silicon-On-Insulator offset plate.
Background technology
Silica Gel Silica gel can be divided into organic silica gel and the large class of inorganic silicon two by its character and component.The purposes range of application of organic silica gel widely.It not only uses as the special material of aviation, sophisticated technology, military technique department, and for each department of national economy, its range of application diffuses into: building, electric, weaving, automobile, machinery, leather papermaking, chemical industry light industry, metal and paint, medicine are medical.
And silica-gel plate is a kind of sheet material having the matrix making sheet material to make in conjunction with organic silica gel and other packing materials, can.Silica-gel plate has the advantages such as excellent heat-resistant air aging property, ozone resistance, insulativity, for industries such as electrical equipment, machinery, buildings.And as electrical equipment aspect, for most of material, insulation is important characteristic, although and silica-gel plate has certain insulativity, under high electromagnetic field, its insulation level is inadequate, cannot meet onsite application requirement.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of high Silicon-On-Insulator offset plate, than the silica-gel plate height of resistance to insulativity 2-3 in prior art doubly, can be used for the place high to insulating requirements and seals or use of mating formation, safe and reliable, price economy material benefit.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of high Silicon-On-Insulator offset plate, it is prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber, 65 ~ 80 parts; Containing silicone oil, 8-15 part of active hydrogen; Low Density Polyethylene, 10-15 part; Nano zine oxide, 2-5 part; Carbon black N330,4-6 part; Barium sulfate, 3-5 part; Mica, 5-6 part, ceramics powder, 5-8 part; Sulfur, 5-6.5 part; Crosslink agent DCP, 0.5-1.5 part; Vinyltriethoxysilane, 1-4 part, oxidation inhibitor 1.5-2.5 part, tensio-active agent, 2-5 part.
In the present invention's preferred embodiments, it is prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber, 75 ~ 80 parts; Containing silicone oil, 10-12 part of active hydrogen; Low Density Polyethylene, 12-15 part; Nano zine oxide, 4-5 part; Carbon black N330,5-6 part; Barium sulfate, 4-5 part; Mica, 5-6 part, ceramics powder, 6-8 part; Sulfur, 6-6.5 part; Crosslink agent DCP, 1-1.5 part; Vinyltriethoxysilane, 2-4 part, oxidation inhibitor 2-2.5 part, tensio-active agent, 3.5-5 part.
In the present invention's preferred embodiments, be prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber 78.5 parts; Containing the silicone oil 11 parts of active hydrogen; Low Density Polyethylene, 12 parts; Nano zine oxide 4.5 parts; Carbon black N33066 part; 4.5 parts, barium sulfate; 6 parts, mica, ceramics powder 8 parts; Sulfur 6.5 parts; Crosslink agent DCP 1.5 parts; Vinyltriethoxysilane 3.5 parts, 2.5 parts, oxidation inhibitor, 4 parts, tensio-active agent.
In the present invention's preferred embodiments, described oxidation inhibitor is secondary-butyl-p-phenylenediamine oxidation inhibitor.
In the present invention's preferred embodiments, also containing strengthening agent and anti-wear agent in described high Silicon-On-Insulator offset plate.
The invention has the beneficial effects as follows: a kind of high Silicon-On-Insulator offset plate of the present invention, than the silica-gel plate height of resistance to insulativity 2-3 in prior art doubly, can be used for the place high to insulating requirements and seal or use of mating formation, safe and reliable, price economy material benefit.
Embodiment
Be clearly and completely described to the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the present invention comprises:
A kind of high Silicon-On-Insulator offset plate, it is prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber, 65 ~ 80 parts; Containing silicone oil, 8-15 part of active hydrogen; Low Density Polyethylene, 10-15 part; Nano zine oxide, 2-5 part; Carbon black N330,4-6 part; Barium sulfate, 3-5 part; Mica, 5-6 part, ceramics powder, 5-8 part; Sulfur, 5-6.5 part; Crosslink agent DCP, 0.5-1.5 part; Vinyltriethoxysilane, 1-4 part, oxidation inhibitor 1.5-2.5 part, tensio-active agent, 2-5 part.
In the present invention's preferred embodiments, it is prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber, 75 ~ 80 parts; Containing silicone oil, 10-12 part of active hydrogen; Low Density Polyethylene, 12-15 part; Nano zine oxide, 4-5 part; Carbon black N330,5-6 part; Barium sulfate, 4-5 part; Mica, 5-6 part, ceramics powder, 6-8 part; Sulfur, 6-6.5 part; Crosslink agent DCP, 1-1.5 part; Vinyltriethoxysilane, 2-4 part, oxidation inhibitor 2-2.5 part, tensio-active agent, 3.5-5 part.
In the present invention's preferred embodiments, be prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber 78.5 parts; Containing the silicone oil 11 parts of active hydrogen; Low Density Polyethylene, 12 parts; Nano zine oxide 4.5 parts; Carbon black N33066 part; 4.5 parts, barium sulfate; 6 parts, mica, ceramics powder 8 parts; Sulfur 6.5 parts; Crosslink agent DCP 1.5 parts; Vinyltriethoxysilane 3.5 parts, 2.5 parts, oxidation inhibitor, 4 parts, tensio-active agent.
In the present invention's preferred embodiments, described oxidation inhibitor is secondary-butyl-p-phenylenediamine oxidation inhibitor.
In the present invention's preferred embodiments, also containing strengthening agent and anti-wear agent in described high Silicon-On-Insulator offset plate
The invention has the beneficial effects as follows: a kind of high Silicon-On-Insulator offset plate of the present invention, than the silica-gel plate height of resistance to insulativity 2-3 in prior art doubly, can be used for the place high to insulating requirements and seal or use of mating formation, safe and reliable, price economy material benefit.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize description of the present invention to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (5)
1. a high Silicon-On-Insulator offset plate, is characterized in that, it is prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber, 65 ~ 80 parts; Containing silicone oil, 8-15 part of active hydrogen; Low Density Polyethylene, 10-15 part; Nano zine oxide, 2-5 part; Carbon black N330,4-6 part; Barium sulfate, 3-5 part; Mica, 5-6 part, ceramics powder, 5-8 part; Sulfur, 5-6.5 part; Crosslink agent DCP, 0.5-1.5 part; Vinyltriethoxysilane, 1-4 part, oxidation inhibitor 1.5-2.5 part, tensio-active agent, 2-5 part.
2. high Silicon-On-Insulator offset plate according to claim 1, is characterized in that, be prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber, 75 ~ 80 parts; Containing silicone oil, 10-12 part of active hydrogen; Low Density Polyethylene, 12-15 part; Nano zine oxide, 4-5 part; Carbon black N330,5-6 part; Barium sulfate, 4-5 part; Mica, 5-6 part, ceramics powder, 6-8 part; Sulfur, 6-6.5 part; Crosslink agent DCP, 1-1.5 part; Vinyltriethoxysilane, 2-4 part, oxidation inhibitor 2-2.5 part, tensio-active agent, 3.5-5 part.
3. high Silicon-On-Insulator offset plate according to claim 1, is characterized in that, be prepared from by the raw material of following portions by weight proportioning: organo-silicone rubber 78.5 parts; Containing the silicone oil 11 parts of active hydrogen; Low Density Polyethylene, 12 parts; Nano zine oxide 4.5 parts; Carbon black N33066 part; 4.5 parts, barium sulfate; 6 parts, mica, ceramics powder 8 parts; Sulfur 6.5 parts; Crosslink agent DCP 1.5 parts; Vinyltriethoxysilane 3.5 parts, 2.5 parts, oxidation inhibitor, 4 parts, tensio-active agent.
4. high Silicon-On-Insulator offset plate according to claim 1, is characterized in that, described oxidation inhibitor is secondary-butyl-p-phenylenediamine oxidation inhibitor.
5. high Silicon-On-Insulator offset plate according to claim 1, is characterized in that, also containing strengthening agent and anti-wear agent in described high Silicon-On-Insulator offset plate.
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CN201510893871.5A CN105315673A (en) | 2015-12-08 | 2015-12-08 | High-insulation silica gel plate |
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CN201510893871.5A CN105315673A (en) | 2015-12-08 | 2015-12-08 | High-insulation silica gel plate |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113683891A (en) * | 2021-09-15 | 2021-11-23 | 湖南翰坤实业有限公司 | Insulating material and preparation method thereof |
CN113980472A (en) * | 2021-11-22 | 2022-01-28 | 长缆电工科技股份有限公司 | Modified silicon rubber material and preparation method and application thereof |
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2015
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JP2007169332A (en) * | 2005-12-19 | 2007-07-05 | Shin Etsu Chem Co Ltd | Silicone rubber sheet for heat resistant, thermoconductive hot press-bonding |
TW200920790A (en) * | 2007-11-15 | 2009-05-16 | Kureha Elastomer Co Ltd | Heat transfer elastic sheet and method for manufacturing the same |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113683891A (en) * | 2021-09-15 | 2021-11-23 | 湖南翰坤实业有限公司 | Insulating material and preparation method thereof |
CN113683891B (en) * | 2021-09-15 | 2023-01-31 | 湖南翰坤实业有限公司 | Insulating material and preparation method thereof |
CN113980472A (en) * | 2021-11-22 | 2022-01-28 | 长缆电工科技股份有限公司 | Modified silicon rubber material and preparation method and application thereof |
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Application publication date: 20160210 |