CN105261642B - 异质结高电子迁移率自旋场效应晶体管及制造方法 - Google Patents
异质结高电子迁移率自旋场效应晶体管及制造方法 Download PDFInfo
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- CN105261642B CN105261642B CN201510518311.1A CN201510518311A CN105261642B CN 105261642 B CN105261642 B CN 105261642B CN 201510518311 A CN201510518311 A CN 201510518311A CN 105261642 B CN105261642 B CN 105261642B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (8)
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CN201510518311.1A CN105261642B (zh) | 2015-08-21 | 2015-08-21 | 异质结高电子迁移率自旋场效应晶体管及制造方法 |
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CN201510518311.1A CN105261642B (zh) | 2015-08-21 | 2015-08-21 | 异质结高电子迁移率自旋场效应晶体管及制造方法 |
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CN105261642A CN105261642A (zh) | 2016-01-20 |
CN105261642B true CN105261642B (zh) | 2019-04-12 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107658337B (zh) * | 2017-06-07 | 2020-09-08 | 西安电子科技大学 | 高电子迁移率自旋场效应晶体管及其制备方法 |
CN107527949B (zh) * | 2017-06-07 | 2020-05-12 | 西安电子科技大学 | 基于Cr掺杂4H-SiC衬底异质结自旋场效应晶体管及其制备方法 |
CN107359127B (zh) * | 2017-06-07 | 2020-03-24 | 西安电子科技大学 | 蓝宝石衬底的Fe掺杂自旋场效应晶体管及其制造方法 |
CN107425059B (zh) * | 2017-06-07 | 2020-05-22 | 西安电子科技大学 | Cr掺杂异质结自旋场效应晶体管及其制备方法 |
CN107359122B (zh) * | 2017-06-07 | 2020-09-08 | 西安电子科技大学 | Mn掺杂异质结自旋场效应晶体管的制备方法 |
CN107369707B (zh) * | 2017-06-07 | 2020-03-24 | 西安电子科技大学 | 基于4H-SiC衬底异质结自旋场效应晶体管及其制造方法 |
CN109817711B (zh) * | 2019-01-28 | 2020-06-26 | 西安电子科技大学 | 具有AlGaN/GaN异质结的氮化镓横向晶体管及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270554A (en) * | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
CN1441965A (zh) * | 2000-05-10 | 2003-09-10 | 克里公司 | 碳化硅金属半导体场效应晶体管和制造碳化硅金属半导体场效应晶体管的方法 |
CN101536192A (zh) * | 2006-11-10 | 2009-09-16 | 住友电气工业株式会社 | 碳化硅半导体器件及其制造方法 |
CN103730359A (zh) * | 2013-10-09 | 2014-04-16 | 西安电子科技大学 | 复合栅介质SiC MISFET器件的制作方法 |
-
2015
- 2015-08-21 CN CN201510518311.1A patent/CN105261642B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270554A (en) * | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
CN1441965A (zh) * | 2000-05-10 | 2003-09-10 | 克里公司 | 碳化硅金属半导体场效应晶体管和制造碳化硅金属半导体场效应晶体管的方法 |
CN101536192A (zh) * | 2006-11-10 | 2009-09-16 | 住友电气工业株式会社 | 碳化硅半导体器件及其制造方法 |
CN103730359A (zh) * | 2013-10-09 | 2014-04-16 | 西安电子科技大学 | 复合栅介质SiC MISFET器件的制作方法 |
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