CN105244274B - 一种逆导型igbt器件及其制作方法 - Google Patents
一种逆导型igbt器件及其制作方法 Download PDFInfo
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- CN105244274B CN105244274B CN201510813146.2A CN201510813146A CN105244274B CN 105244274 B CN105244274 B CN 105244274B CN 201510813146 A CN201510813146 A CN 201510813146A CN 105244274 B CN105244274 B CN 105244274B
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- igbt
- cellular region
- electrode layer
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- copper electrode
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- 238000002360 preparation method Methods 0.000 title description 6
- 230000001413 cellular effect Effects 0.000 claims abstract description 124
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000010949 copper Substances 0.000 claims abstract description 72
- 229910052802 copper Inorganic materials 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 238000011084 recovery Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000007943 implant Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510813146.2A CN105244274B (zh) | 2015-11-19 | 2015-11-19 | 一种逆导型igbt器件及其制作方法 |
PCT/CN2016/087279 WO2017084341A1 (zh) | 2015-11-19 | 2016-06-27 | 一种逆导型igbt器件及其制作方法 |
US15/762,088 US10319595B2 (en) | 2015-11-19 | 2016-06-27 | Reverse conducting IGBT device and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510813146.2A CN105244274B (zh) | 2015-11-19 | 2015-11-19 | 一种逆导型igbt器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN105244274A CN105244274A (zh) | 2016-01-13 |
CN105244274B true CN105244274B (zh) | 2018-12-14 |
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CN201510813146.2A Active CN105244274B (zh) | 2015-11-19 | 2015-11-19 | 一种逆导型igbt器件及其制作方法 |
Country Status (3)
Country | Link |
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US (1) | US10319595B2 (zh) |
CN (1) | CN105244274B (zh) |
WO (1) | WO2017084341A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105244274B (zh) | 2015-11-19 | 2018-12-14 | 株洲中车时代电气股份有限公司 | 一种逆导型igbt器件及其制作方法 |
CN106803498A (zh) * | 2017-01-18 | 2017-06-06 | 株洲中车时代电气股份有限公司 | 一种逆导igbt器件的制备方法 |
CN111211168B (zh) * | 2020-01-13 | 2022-06-10 | 上海擎茂微电子科技有限公司 | 一种rc-igbt芯片及其制造方法 |
CN113394278A (zh) * | 2020-03-11 | 2021-09-14 | 珠海格力电器股份有限公司 | 逆导型igbt及其制备方法 |
CN113223944B (zh) * | 2021-03-31 | 2022-09-27 | 青岛惠科微电子有限公司 | 一种快恢复芯片的制造方法、制造设备和快恢复芯片 |
CN113125928A (zh) * | 2021-04-20 | 2021-07-16 | 武汉大学 | 基于Miner理论的IGBT模块老化表征方法及*** |
CN114050183B (zh) * | 2021-11-10 | 2024-04-12 | 安徽瑞迪微电子有限公司 | 逆导型功率芯片制造方法 |
CN115985941B (zh) * | 2023-03-21 | 2023-06-23 | 上海埃积半导体有限公司 | 一种纵向rc-igbt结构及其制备方法 |
CN116435353A (zh) * | 2023-06-08 | 2023-07-14 | 广东巨风半导体有限公司 | 一种逆导绝缘栅双极型晶体管结构及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1771604A (zh) * | 2003-04-09 | 2006-05-10 | 欧佩克欧洲功率半导体有限责任公司 | 半导体元件及其制造方法 |
CN102396056A (zh) * | 2009-12-15 | 2012-03-28 | 丰田自动车株式会社 | 半导体装置的制造方法 |
CN103325669A (zh) * | 2012-03-23 | 2013-09-25 | 株式会社东芝 | 屏蔽板、半导体装置的制造方法、半导体装置 |
Family Cites Families (9)
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JP2008192737A (ja) * | 2007-02-02 | 2008-08-21 | Denso Corp | 半導体装置 |
CN102496572A (zh) | 2011-12-29 | 2012-06-13 | 江苏宏微科技有限公司 | 快恢复外延型二极管及其制备方法 |
JP2014075582A (ja) * | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP5787853B2 (ja) * | 2012-09-12 | 2015-09-30 | 株式会社東芝 | 電力用半導体装置 |
CN103715083B (zh) * | 2012-09-28 | 2018-07-06 | 中国科学院微电子研究所 | Frd的制备方法 |
CN103165524B (zh) | 2013-04-03 | 2015-07-15 | 株洲南车时代电气股份有限公司 | 一种igbt芯片及其正面铜金属化结构的制作方法 |
CN103311245B (zh) * | 2013-06-08 | 2015-07-15 | 株洲南车时代电气股份有限公司 | 一种逆导igbt芯片及其制备方法 |
JP6728638B2 (ja) * | 2015-11-10 | 2020-07-22 | 富士電機株式会社 | 半導体デバイスの製造方法 |
CN105244274B (zh) * | 2015-11-19 | 2018-12-14 | 株洲中车时代电气股份有限公司 | 一种逆导型igbt器件及其制作方法 |
-
2015
- 2015-11-19 CN CN201510813146.2A patent/CN105244274B/zh active Active
-
2016
- 2016-06-27 US US15/762,088 patent/US10319595B2/en active Active
- 2016-06-27 WO PCT/CN2016/087279 patent/WO2017084341A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1771604A (zh) * | 2003-04-09 | 2006-05-10 | 欧佩克欧洲功率半导体有限责任公司 | 半导体元件及其制造方法 |
CN102396056A (zh) * | 2009-12-15 | 2012-03-28 | 丰田自动车株式会社 | 半导体装置的制造方法 |
CN103325669A (zh) * | 2012-03-23 | 2013-09-25 | 株式会社东芝 | 屏蔽板、半导体装置的制造方法、半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN105244274A (zh) | 2016-01-13 |
US10319595B2 (en) | 2019-06-11 |
WO2017084341A1 (zh) | 2017-05-26 |
US20180269062A1 (en) | 2018-09-20 |
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