CN105185828A - 鳍式场效晶体管与其制备方法 - Google Patents
鳍式场效晶体管与其制备方法 Download PDFInfo
- Publication number
- CN105185828A CN105185828A CN201510323753.0A CN201510323753A CN105185828A CN 105185828 A CN105185828 A CN 105185828A CN 201510323753 A CN201510323753 A CN 201510323753A CN 105185828 A CN105185828 A CN 105185828A
- Authority
- CN
- China
- Prior art keywords
- basic unit
- fin
- hard cover
- cover screen
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000002353 field-effect transistor method Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 claims abstract description 52
- 238000009413 insulation Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 33
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 description 15
- 230000012447 hatching Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- ZQXQADNTSSMHJI-UHFFFAOYSA-N hafnium(4+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Ta+5].[Hf+4] ZQXQADNTSSMHJI-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510323753.0A CN105185828A (zh) | 2015-06-12 | 2015-06-12 | 鳍式场效晶体管与其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510323753.0A CN105185828A (zh) | 2015-06-12 | 2015-06-12 | 鳍式场效晶体管与其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105185828A true CN105185828A (zh) | 2015-12-23 |
Family
ID=54907802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510323753.0A Pending CN105185828A (zh) | 2015-06-12 | 2015-06-12 | 鳍式场效晶体管与其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105185828A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105788632A (zh) * | 2016-02-26 | 2016-07-20 | 宁波时代全芯科技有限公司 | 记忆体结构与记忆体电路 |
CN107026175A (zh) * | 2015-12-28 | 2017-08-08 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN107492571A (zh) * | 2016-06-13 | 2017-12-19 | 格科微电子(上海)有限公司 | Cmos图像传感器的双鳍形场效应晶体管 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101097952A (zh) * | 2006-06-26 | 2008-01-02 | 茂德科技股份有限公司 | 多重鳍状场效应晶体管及其制作方法 |
US20130168819A1 (en) * | 2011-12-28 | 2013-07-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like BJT |
CN203277389U (zh) * | 2013-05-29 | 2013-11-06 | 联华电子股份有限公司 | 半导体装置 |
-
2015
- 2015-06-12 CN CN201510323753.0A patent/CN105185828A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101097952A (zh) * | 2006-06-26 | 2008-01-02 | 茂德科技股份有限公司 | 多重鳍状场效应晶体管及其制作方法 |
US20130168819A1 (en) * | 2011-12-28 | 2013-07-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like BJT |
CN203277389U (zh) * | 2013-05-29 | 2013-11-06 | 联华电子股份有限公司 | 半导体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107026175A (zh) * | 2015-12-28 | 2017-08-08 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN107026175B (zh) * | 2015-12-28 | 2022-02-18 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN105788632A (zh) * | 2016-02-26 | 2016-07-20 | 宁波时代全芯科技有限公司 | 记忆体结构与记忆体电路 |
CN105788632B (zh) * | 2016-02-26 | 2019-04-02 | 江苏时代全芯存储科技有限公司 | 记忆体电路 |
CN107492571A (zh) * | 2016-06-13 | 2017-12-19 | 格科微电子(上海)有限公司 | Cmos图像传感器的双鳍形场效应晶体管 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20210391420A1 (en) | Fin recess last process for finfet fabrication | |
CN103177950B (zh) | 制造鳍器件的结构和方法 | |
CN106158658B (zh) | 制造Fin-FET器件的装置和方法 | |
TWI524464B (zh) | FinFET元件與其形成方法 | |
JP6325669B2 (ja) | 半導体構造、集積回路構造、及びそれらの製造方法 | |
TWI591827B (zh) | 半導體元件及其形成方法 | |
US9269815B2 (en) | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | |
US9190497B2 (en) | Method for fabricating semiconductor device with loop-shaped fin | |
KR102343209B1 (ko) | 반도체 장치 및 그 제조 방법 | |
TW201946226A (zh) | 具襯墊間隙壁的閘極切割結構及相關方法 | |
CN105745738B (zh) | 自对准栅极触点结构 | |
CN106711044A (zh) | 切割金属栅极的方法 | |
TW201727830A (zh) | 半導體裝置 | |
CN108538786B (zh) | 半导体装置及其制造方法 | |
US8883623B2 (en) | Facilitating gate height uniformity and inter-layer dielectric protection | |
US20210351068A1 (en) | Single diffusion cut for gate structures | |
CN105185828A (zh) | 鳍式场效晶体管与其制备方法 | |
CN109560046B (zh) | 半导体结构及其形成方法 | |
US20160086966A1 (en) | Semiconductor memory array with air gaps between adjacent gate structures and method of manufacturing the same | |
TWI728966B (zh) | 半導體元件及其製作方法 | |
KR102541010B1 (ko) | 반도체 장치 | |
TW201903892A (zh) | 用於形成自對準接觸物的擴大犧牲閘極覆蓋物 | |
CN106558610B (zh) | 一种半导体器件及其制备方法、电子装置 | |
CN105097516A (zh) | 一种FinFET器件及其制造方法、电子装置 | |
JP2013045953A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170703 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co., Ltd. Applicant after: Jiangsu times core semiconductor Co., Ltd. Applicant after: The British Vigin Islands manufacturer epoch Quan Xin Science and Technology Ltd. Address before: 315195 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: Ningbo epoch Quan Xin Science and Technology Ltd. Applicant before: The British Vigin Islands manufacturer epoch Quan Xin Science and Technology Ltd. |
|
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151223 |
|
WD01 | Invention patent application deemed withdrawn after publication |