CN105185300B - Amoled像素驱动电路及像素驱动方法 - Google Patents

Amoled像素驱动电路及像素驱动方法 Download PDF

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CN105185300B
CN105185300B CN201510484324.1A CN201510484324A CN105185300B CN 105185300 B CN105185300 B CN 105185300B CN 201510484324 A CN201510484324 A CN 201510484324A CN 105185300 B CN105185300 B CN 105185300B
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film transistor
tft
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voltage
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CN105185300A (zh
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蔡玉莹
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供的一种AMOLED像素驱动电路及像素驱动方法。该AMOLED像素驱动电路采用3T1C结构，包括：第一薄膜晶体管(T1)、第二薄膜晶体管(T2)、第三薄膜晶体管(T3)、存储电容(Cs)、及有机发光二极管(OLED)，并引入第二扫描信号电压(Vsel2)，通过第三薄膜晶体管(T3)在复位阶段向第一薄膜晶体管(T1)即驱动薄膜晶体管的源极提供数据信号电压(VData)的初始低电位(Vini)，能够有效补偿驱动薄膜晶体管的阈值电压变化，减小电源电压信号的复杂度。

Description

AMOLED像素驱动电路及像素驱动方法
技术领域
本发明涉及显示技术领域，尤其涉及一种AMOLED像素驱动电路及像素驱动方法。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示装置具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示装置按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管(Thin Film Transistor，TFT)矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
AMOLED是电流驱动器件，当有电流流过有机发光二极管时，有机发光二极管发光，且发光亮度由流过有机发光二极管自身的电流决定。大部分已有的集成电路(IntegratedCircuit，IC)都只传输电压信号，故AMOLED的像素驱动电路需要完成将电压信号转变为电流信号的任务。传统的AMOLED像素驱动电路通常为2T1C，即两个薄膜晶体管加一个电容的结构，将电压变换为电流，但传统2T1C像素驱动电路一般无补偿功能。
如图1所述，一种现有的用于AMOLED并具有补偿功能的2T1C像素驱动电路，包括一第一薄膜晶体管T10、一第二薄膜晶体管T20、及一电容Cs，所述第一薄膜晶体管T10为驱动薄膜晶体管，所述第二薄膜晶体管T20为开关薄膜晶体管，所述电容Cs为存储电容。具体地，所述第二薄膜晶体管T20的栅极电性连接扫描信号电压Vsel，源极电性连接数据信号电压VData，漏极与第一薄膜晶体管T10的栅极、及电容Cs的一端电性连接；所述第一薄膜晶体管T10的源极电性连接电源电压Vdd，漏极电性连接有机发光二级管D的阳极；有机发光二级管D的阴极电性连接接地端；电容Cs的一端电性连接第二薄膜晶体管T20的漏极，另一端电性连接第一薄膜晶体管T10的源极。
请参阅图2，图2为图1电路对应的各工作阶段及关键节点的电位图，由图2可知，图1所示的2T1C像素驱动电路的工作过程分为四个阶段，具体如下：一、复位阶段S10：所述扫描信号电压Vsel提供高电位，控制第二薄膜晶体管T20打开，数据信号电压VData经过第二薄膜晶体管T20向第一薄膜晶体管T10的栅极提供第一参考电压Vref1，即第一薄膜晶体管T10的栅极电压Va＝Vref1，第一薄膜晶体管T10打开，交流电源电压Vdd提供低电位Vdl，则第一薄膜晶体管的源极电压Vb＝Vdl；二、阈值电压检测阶段S20：所述扫描信号电压Vsel提供高电位，控制第二薄膜晶体管T20打开，数据信号电压VData经过第二薄膜晶体管T20向第一薄膜晶体管T10的栅极提供第二参考电压Vref2，且Vref2＜Vref1，即第一薄膜晶体管T10的栅极电压Va＝Vref2，第一栅极薄膜晶体管T10打开，交流电源电压Vdd提供高电位，第一薄膜晶体管的源极电压Vb提升至Vb＝Vref2-Vth，Vth为第一薄膜晶体管T10的阈值电压；三、阈值电压补偿阶段S30：所述扫描信号电压Vsel提供高电位，控制第二薄膜晶体管T20打开，数据信号电压VData经过第二薄膜晶体管T20向第一薄膜晶体管T10的栅极及电容Cs提供显示数据信号电压Vdata，即第一薄膜晶体管T10的栅极电压Va＝Vdata，第一栅极薄膜晶体管T10打开，交流电源电压Vdd提供高电位，第一薄膜晶体管的源极电压Vb改变至Vb＝Vref2-Vth+ΔV，ΔV为数据信号电压Vdata对所述第一薄膜晶体管T10的源极电压所产生的影响；四、发光阶段S40，所述扫描信号电压Vsel提供低电位，第二薄膜晶体管T20关断，由于电容Cs的存储作用，第二薄膜晶体管T20的栅极电压仍可继续保持数据信号电压Va＝Vdata，使得第一薄膜晶体管T10处于导通状态，第一薄膜晶体管T10的源极电压为Vb＝Vref2-Vth+ΔV，第一薄膜晶体管T10的栅源极电压Vgs＝Va-Vb＝Vdata-Vref2+Vth-ΔV，即可补偿驱动薄膜晶体管的阈值电压。然而，如图1所示的2T1C像素驱动电路存在交流电源电压Vdd信号复杂的缺点。
发明内容
本发明的目的在于提供一种AMOLED像素驱动电路，能够有效补偿驱动薄膜晶体管的阈值电压变化，减小电源电压信号的复杂度。
本发明的目的还在于提供一种AMOLED像素驱动方法，能够有效补偿驱动薄膜晶体管的阈值电压变化，解决电源电压信号复杂的问题。
为实现上述目的，本发明提供了一种AMOLED像素驱动电路，包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶、存储电容、及有机发光二极管；
所述第一薄膜晶体管的栅极电性连接于第一节点，源极电性连接于第二节点，漏极电性连接于电源电压；
所述第二薄膜晶体管的栅极电性连接于第一扫描信号电压，源极电性连接于数据信号电压，漏极电性连接于第一节点；
所述第三薄膜晶体管的栅极电性连接于第二扫描信号电压，源极电性连接于数据信号电压，漏极电性连接于第二节点；
所述存储电容的一端电性连接于第一节点，另一端电性连接于第二节点；
所述有机发光二极管的阳极电性连接于第二节点，阴极电性连接于接地端；
所述第一薄膜晶体管为驱动薄膜晶体管；
所述电源电压Vdd为一恒定高电压。
所述第一薄膜晶体管、第二薄膜晶体管、及第三薄膜晶体管均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管、或非晶硅薄膜晶体管。
所述第一扫描信号电压、第二扫描信号电压、及数据信号电压均通过外部时序控制器产生。
所述第一扫描信号电压、第二扫描信号电压、与数据信号电压相组合先后对应于复位阶段、阈值电压检测阶段、阈值电压补偿阶段、及发光阶段。
在所述复位阶段，所述第一扫描信号电压V、与第二扫描信号电压为高电位，数据信号电压为初始低电位；
在所述阈值电压检测阶段，所述第一扫描信号电压为高电位，第二扫描信号电压为低电位，数据信号电压为参考高电位；
在所述阈值电压补偿阶段，所述第一扫描信号电压为高电位，第二扫描信号电压为低电位，数据信号电压为显示数据信号高电位；
在所述驱动发光阶段，所述第一扫描信号电压、与第二扫描信号电压为低电位，数据信号电压为参考高电位。所述显示数据信号高电位高于参考高电位。
本发明还提供一种AMOLED像素驱动方法，包括如下步骤：
步骤1、提供一AMOLED像素驱动电路，包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、存储电容、及有机发光二极管；
所述第一薄膜晶体管的栅极电性连接于第一节点，源极电性连接于第二节点，漏极电性连接于电源电压；
所述第二薄膜晶体管的栅极电性连接于第一扫描信号电压，源极电性连接于数据信号电压，漏极电性连接于第一节点；
所述第三薄膜晶体管的栅极电性连接于第二扫描信号电压，源极电性连接于数据信号电压，漏极电性连接于第二节点；
所述存储电容的一端电性连接于第一节点，另一端电性连接于第二节点；
所述有机发光二极管的阳极电性连接于第二节点，阴极电性连接于接地端；
所述第一薄膜晶体管为驱动薄膜晶体管；
所述电源电压为一恒定高电压；
步骤2、进入复位阶段，
所述第一扫描信号电压、与第二扫描信号电压提供高电位，所述第二、第三薄膜晶体管打开，数据信号电压提供初始低电位并分别通过第二、第三薄膜晶体管写入第一节点即第一薄膜晶体管的栅极与第二节点即第一薄膜晶体管的源极，第一薄膜晶体管关断；
步骤3、进入阈值电压检测阶段；
所述第一扫描信号电压提供高电位，第二扫描信号电压提供低电位，所述第二薄膜晶体管打开，第三薄膜晶体管关断，数据信号电压经过第二薄膜晶体管向第一节点即第一薄膜晶体管的栅极提供参考高电位，所述第一薄膜晶体管打开，第二节点即第一薄膜晶体管的源极的电位提升至Vref-Vth，其中Vth为第一薄膜晶体管的阈值电压；
步骤4、进入阈值电压补偿阶段；
所述第一扫描信号电压提供高电位，第二扫描信号电压提供低电位，所述第二薄膜晶体管打开，第三薄膜晶体管关断，数据信号电压经过第二薄膜晶体管向第一节点即第一薄膜晶体管的栅极以及存储电容提供显示数据信号高电位，第一薄膜晶体管打开，第二节点即第一薄膜晶体管的源极的电位变为Vref-Vth+ΔV，ΔV为显示数据信号高电位对所述第一薄膜晶体管的源极电位即第二节点的电位所产生的影响；
步骤5、进入驱动发光阶段；所述数据信号电压提供参考高电位，所述第一扫描信号电压、与第二扫描信号电压提供低电位，所述第二、第三薄膜晶体管关闭，由于存储电容的存储作用，第一节点即第一薄膜晶体管的栅极电位仍可继续保持在显示数据信号高电位，使得第一薄膜晶体管处于打开状态；所述第二节点的电位即所述第一薄膜晶体管的源极电位仍为Vref-Vth+ΔV；
所述有机发光二极管发光，且流经所述有机发光二极管的电流与第一薄膜晶体管的阈值电压无关。
所述第一薄膜晶体管、第二薄膜晶体管、及第三薄膜晶体管均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管、或非晶硅薄膜晶体管。
所述第一扫描信号电压、第二扫描信号电压、及数据信号电压均通过外部时序控制器产生。
所述显示数据信号高电位高于参考高电位。
本发明的有益效果：本发明供的一种AMOLED像素驱动电路及像素驱动方法，采用3T1C结构的像素驱动电路对每一像素中驱动薄膜晶体管的阈值电压进行补偿，能够有效补偿每一像素中驱动薄膜晶体管的阈值电压变化，使AMOLED的显示亮度较均匀，提升显示品质；通过引入第二扫描信号电压使得第三薄膜晶体管在复位阶段向驱动薄膜晶体管的源极提供数据信号电压的初始低电位，能够减小电源电压信号的复杂度。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的用于AMOLED的2T1C像素驱动电路的电路图；
图2为对应图1所示用于AMOLED的2T1C像素驱动电路的各工作阶段及关键节点的电位图；
图3为本发明的AMOLED像素驱动电路的电路图；
图4为本发明的AMOLED像素驱动电路的时序图；
图5为本发明的AMOLED像素驱动电路的各工作阶段及关键节点的电位图；
图6为本发明的AMOLED像素驱动方法的步骤2的示意图；
图7为本发明的AMOLED像素驱动方法的步骤3的示意图；
图8为本发明的AMOLED像素驱动方法的步骤4的示意图；
图9为本发明的AMOLED像素驱动方法的步骤5的示意图；
图10为传统无补偿2T1C像素驱动电路中驱动薄膜晶体管的阈值电压漂移时对应的流经OLED的电流模拟数据图；
图11为本发明中驱动薄膜晶体管的阈值电压漂移时对应的流经OLED的电流模拟数据图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明首先提供一种AMOLED像素驱动电路，包括：第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、存储电容Cs、及有机发光二极管OLED。
所述第一薄膜晶体管T1的栅极电性连接于第一节点a，源极电性连接于第二节点b，漏极电性连接于电源电压Vdd；
所述第二薄膜晶体管T2的栅极电性连接于第一扫描信号电压Vsel1，源极电性连接于数据信号电压VData，漏极电性连接于第一节点a；
所述第三薄膜晶体管T3的栅极电性连接于第二扫描信号电压Vsel2，源极电性连接于数据信号电压VData，漏极电性连接于第二节点b；
所述存储电容Cs的一端电性连接于第一节点a，另一端电性连接于第二节点b；
所述有机发光二极管OLED的阳极电性连接于第二节点b，阴极电性连接于接地端。
所述第一薄膜晶体管T1为驱动薄膜晶体管。
具体地，所述第一薄膜晶体管T1、第二薄膜晶体管T2、及第三薄膜晶体管T3均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管、或非晶硅薄膜晶体管。
所述第一扫描信号电压Vsel1、第二扫描信号电压Vsel2、及数据信号电压VData均通过外部时序控制器产生。
进一步地，请参阅图4与图5，所述电源电压Vdd为一恒定高电压，所述第一扫描信号电压Vsel1、第二扫描信号电压Vsel2、与数据信号电压VData相组合先后对应于复位阶段S1、阈值电压检测阶段S2、阈值电压补偿阶段S3、及发光阶段S4。
在所述复位阶段S1，所述第一扫描信号电压Vsel1、与第二扫描信号电压Vsel2为高电位，数据信号电压VData为初始低电位Vini。
在所述阈值电压检测阶段S2，所述第一扫描信号电压Vsel1为高电位，第二扫描信号电压Vsel2为低电位，数据信号电压VData为参考高电位Vref。
在所述阈值电压补偿阶段S3，所述第一扫描信号电压Vsel1为高电位，第二扫描信号电压Vsel2为低电位，数据信号电压VData为显示数据信号高电位Vdata。
在所述驱动发光阶段S4，所述第一扫描信号电压Vsel1、与第二扫描信号电压Vsel2为低电位，数据信号电压VData为参考高电位Vref。
其中，所述第一扫描信号电压Vsel1用于控制第二薄膜晶体管T2的打开与关断；所述存储电容Cs用于存储数据信号电压VData；所述第二扫描信号电压Vsel2用于控制第三薄膜晶体管T3的打开与关断，实现在复位阶段S1向第二节点b即第一薄膜晶体管T1的源极提供初始低电压Vini。所述显示数据信号高电位Vdata高于参考高电位Vref。
该AMOLED像素驱动电路能够减小电源电压信号的复杂度，有效补偿每一像素中第一薄膜晶体管T1即驱动薄膜晶体管的阈值电压变化，使AMOLED的显示亮度较均匀，提升显示品质。
请参阅图6至图9，结合图4与图5，在上述AMOLED像素驱动电路的基础上，本发明还提供一种AMOLED像素驱动方法，包括如下步骤：
步骤1、提供一上述如图3所示的采用3T1C结构的AMOLED像素驱动电路，其中电源电压Vdd始终为一恒定高电压。
此处不再对该电路进行重复描述。
步骤2、请参阅图6，并结合图4与图5，首先进入复位阶段S1。
所述第一扫描信号电压Vsel1、与第二扫描信号电压Vsel2提供高电位，所述第二、第三薄膜晶体管T2、T3打开，数据信号电压VData提供初始低电位Vini并分别通过第二、第三薄膜晶体管T2、T3写入第一节点a即第一薄膜晶体管T1的栅极与第二节点b即第一薄膜晶体管T1的源极，第一薄膜晶体管T1关断。
在该复位阶段S1中：
Vg＝Va＝Vini
Vs＝Vb＝Vini
其中，Vg表示第一薄膜晶体管T1的栅极电位，Va表示第一节点a的电位，Vs表示第一薄膜晶体管T1的源极电位，Vb表示第二节点b的电位。
有机发光二极管OLED不发光。
步骤3、请参阅图7，并结合图4与图5，进入阈值电压检测阶段S2。
所述第一扫描信号电压Vsel1提供高电位，第二扫描信号电压Vsel2提供低电位，所述第二薄膜晶体管T2打开，第三薄膜晶体管T3关断，数据信号电压VData经过第二薄膜晶体管T2向第一节点a即第一薄膜晶体管T1的栅极提供参考高电位Vref，所述第一薄膜晶体管T1打开，第二节点b即第一薄膜晶体管T1的源极的电位提升至Vref-Vth，其中Vth为第一薄膜晶体管T1的阈值电压。
在该阈值电压检测阶段S2中：
Vg＝Va＝Vref
Vs＝Vb＝Vref-Vth
步骤4、请参阅图8，并结合图4与图5，进入阈值电压补偿阶段S3。
所述第一扫描信号电压Vsel1提供高电位，第二扫描信号电压Vsel2提供低电位，所述第二薄膜晶体管T2打开，第三薄膜晶体管T3关断，数据信号电压VData经过第二薄膜晶体管T2向第一节点a即第一薄膜晶体管T1的栅极以及存储电容Cs提供显示数据信号高电位Vdata，第一薄膜晶体管T1打开，第二节点b即第一薄膜晶体管T1的源极的电位变为Vref-Vth+ΔV，ΔV为显示数据信号高电位Vdata对所述第一薄膜晶体管T1的源极电位即第二节点b的电位所产生的影响。
在该阈值电压补偿阶段S3中：
Vg＝Va＝Vdata
Vs＝Vb＝Vref-Vth+ΔV
步骤5、请参阅图9、并结合图4与图5，进入驱动发光阶段S4。
所述数据信号电压VData提供参考高电位Vref，所述第一扫描信号电压Vsel1、与第二扫描信号电压Vsel2提供低电位，所述第二、第三薄膜晶体管T2、T3关闭，由于存储电容Cs的存储作用，第一薄膜晶体管T1处于打开状态，第一节点a即第一薄膜晶体管T1的栅极电位仍可继续保持在：
Vg＝Va＝Vdata；
所述第二节点b的电位即所述第一薄膜晶体管T1的源极电位仍为：
Vs＝Vb＝Vref-Vth+ΔV；
进一步地，已知计算流经有机发光二极管OLED的电流的公式为：
IOLED＝1/2Cox(μW/L)(Vgs－Vth)2 (1)
其中IOLED为有机发光二极管OLED的电流、μ为驱动薄膜晶体管的载流子迁移率、W和L分别为驱动薄膜晶体管的沟道的宽度和长度、Vgs为驱动薄膜晶体管的栅极与源极之间的电压、Vth为驱动薄膜晶体管的阈值电压。在本发明中，驱动薄膜晶体管的阈值电压Vth即为所述第一薄膜晶体管T1的阈值电压Vth；Vgs为所述第一薄膜晶体管T1的栅极电压Vg与源极电压Vs之间的差值，即有：
Vgs＝Vg-Vs＝Vdata-(Vref-Vth+ΔV)＝Vdata-Vref+Vth-ΔV (2)
将(2)式代入(1)式得：
IOLED＝1/2Cox(μW/L)(Vdata-Vref+Vth-ΔV-Vth)2
＝1/2Cox(μW/L)(Vdata-Vref-ΔV)2
由此可见，流经所述有机发光二极管OLED的电流IOLED与所述第一薄膜晶体管T1的阈值电压无关，实现了补偿功能。所述有机发光二极管OLED发光，且流经所述有机发光二极管OLED的电流IOLED与第一薄膜晶体管T1的阈值电压无关。
在本发明的AMOLED像素驱动方法中，由于电源电压Vdd始终为一恒定高电压，相比与现有技术，电源电压信号得以简化，复杂度大大降低。
请参阅图10、图11，图10、图11分别为传统无补偿2T1C像素驱动电路与本发明的电路中当驱动薄膜晶体管即第一薄膜晶体管T1的阈值电压分别漂移0V、+0.5V、－0.5V时，流经有机发光二极管的电流模拟数据图，对比两图可见，本发明的电路中流经有机发光二极管的电流变化量明显小于传统无补偿2T1C像素驱动电路中的流经有机发光二极管的电流变化量，因此本发明有效补偿了驱动薄膜晶体管的阈值电压，保证了有机发光二极管OLED的发光稳定性，能够使AMOLED的显示亮度较均匀，提升显示品质。
综上所述，本发明的AMOLED像素驱动电路及像素驱动方法，采用3T1C结构的像素驱动电路对每一像素中驱动薄膜晶体管的阈值电压进行补偿，能够有效补偿每一像素中驱动薄膜晶体管的阈值电压变化，使AMOLED的显示亮度较均匀，提升显示品质；通过引入第二扫描信号电压使得第三薄膜晶体管在复位阶段向驱动薄膜晶体管的源极提供数据信号电压的初始低电位，能够减小电源电压信号的复杂度。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种AMOLED像素驱动电路，其特征在于，包括：第一薄膜晶体管(T1)、第二薄膜晶体管(T2)、第三薄膜晶体管(T3)、存储电容(Cs)、及有机发光二极管(OLED)；
所述第一薄膜晶体管(T1)的栅极电性连接于第一节点(a)，源极电性连接于第二节点(b)，漏极电性连接于电源电压(Vdd)；
所述第二薄膜晶体管(T2)的栅极电性连接于第一扫描信号电压(Vsel1)，源极电性连接于数据信号电压(VData)，漏极电性连接于第一节点(a)；
所述第三薄膜晶体管(T3)的栅极电性连接于第二扫描信号电压(Vsel2)，源极电性连接于数据信号电压(VData)，漏极电性连接于第二节点(b)；
所述存储电容(Cs)的一端电性连接于第一节点(a)，另一端电性连接于第二节点(b)；
所述有机发光二极管(OLED)的阳极电性连接于第二节点(b)，阴极电性连接于接地端；
所述第一薄膜晶体管(T1)为驱动薄膜晶体管；
所述电源电压(Vdd)为一恒定高电压；
所述第一扫描信号电压(Vsel1)、第二扫描信号电压(Vsel2)、与数据信号电压(VData)、相组合先后对应于复位阶段(S1)、阈值电压检测阶段(S2)、阈值电压补偿阶段(S3)、及驱动发光阶段(S4)；
在所述复位阶段(S1)，所述第一扫描信号电压(Vsel1)、与第二扫描信号电压(Vsel2)为高电位，数据信号电压(VData)为初始低电位(Vini)；
在所述阈值电压检测阶段(S2)，所述第一扫描信号电压(Vsel1)为高电位，第二扫描信号电压(Vsel2)为低电位，数据信号电压(VData)为参考高电位(Vref)；
在所述阈值电压补偿阶段(S3)，所述第一扫描信号电压(Vsel1)为高电位，第二扫描信号电压(Vsel2)为低电位，数据信号电压(VData)为显示数据信号高电位(Vdata)；
在所述驱动发光阶段(S4)，所述第一扫描信号电压(Vsel1)、与第二扫描信号电压(Vsel2)为低电位，数据信号电压(VData)为参考高电位(Vref)。
2.如权利要求1所述的AMOLED像素驱动电路，其特征在于，所述第一薄膜晶体管(T1)、第二薄膜晶体管(T2)、及第三薄膜晶体管(T3)均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管、或非晶硅薄膜晶体管。
3.如权利要求1所述的AMOLED像素驱动电路，其特征在于，所述第一扫描信号电压(Vsel1)、第二扫描信号电压(Vsel2)、及数据信号电压(VData)均通过外部时序控制器产生。
4.如权利要求1所述的AMOLED像素驱动电路，其特征在于，所述显示数据信号高电位(Vdata)高于参考高电位(Vref)。
5.一种AMOLED像素驱动方法，其特征在于，包括如下步骤：
步骤1、提供一AMOLED像素驱动电路，包括：第一薄膜晶体管(T1)、第二薄膜晶体管(T2)、第三薄膜晶体管(T3)、存储电容(Cs)、及有机发光二极管(OLED)；
所述第一薄膜晶体管(T1)的栅极电性连接于第一节点(a)，源极电性连接于第二节点(b)，漏极电性连接于电源电压(Vdd)；
所述第二薄膜晶体管(T2)的栅极电性连接于第一扫描信号电压(Vsel1)，源极电性连接于数据信号电压(VData)，漏极电性连接于第一节点(a)；
所述第三薄膜晶体管(T3)的栅极电性连接于第二扫描信号电压(Vsel2)，源极电性连接于数据信号电压(VData)，漏极电性连接于第二节点(b)；
所述存储电容(Cs)的一端电性连接于第一节点(a)，另一端电性连接于第二节点(b)；
所述有机发光二极管(OLED)的阳极电性连接于第二节点(b)，阴极电性连接于接地端；
所述第一薄膜晶体管(T1)为驱动薄膜晶体管；
所述电源电压(Vdd)为一恒定高电压；
步骤2、进入复位阶段(S1)，
所述第一扫描信号电压(Vsel1)、与第二扫描信号电压(Vsel2)提供高电位，所述第二、第三薄膜晶体管(T2、T3)打开，数据信号电压(VData)提供初始低电位(Vini)并分别通过第二、第三薄膜晶体管(T2、T3)写入第一节点(a)即第一薄膜晶体管(T1)的栅极与第二节点(b)即第一薄膜晶体管(T1)的源极，第一薄膜晶体管(T1)关断；
步骤3、进入阈值电压检测阶段(S2)；
所述第一扫描信号电压(Vsel1)提供高电位，第二扫描信号电压(Vsel2)提供低电位，所述第二薄膜晶体管(T2)打开，第三薄膜晶体管(T3)关断，数据信号电压(VData)经过第二薄膜晶体管(T2)向第一节点(a)即第一薄膜晶体管(T1)的栅极提供参考高电位(Vref)，所述第一薄膜晶体管(T1)打开，第二节点(b)即第一薄膜晶体管(T1)的源极的电位提升至Vref-Vth，其中Vth为第一薄膜晶体管(T1)的阈值电压，Vref为参考高电位(Vref)；
步骤4、进入阈值电压补偿阶段(S3)；
所述第一扫描信号电压(Vsel1)提供高电位，第二扫描信号电压(Vsel2)提供低电位，所述第二薄膜晶体管(T2)打开，第三薄膜晶体管(T3)关断，数据信号电压(VData)经过第二薄膜晶体管(T2)向第一节点(a)即第一薄膜晶体管(T1)的栅极以及存储电容(Cs)提供显示数据信号高电位(Vdata)，第一薄膜晶体管(T1)打开，第二节点(b)即第一薄膜晶体管(T1)的源极的电位变为Vref-Vth+ΔV，ΔV为显示数据信号高电位(Vdata)对所述第一薄膜晶体管(T1)的源极电位即第二节点(b)的电位所产生的影响；
步骤5、进入驱动发光阶段(S4)；所述数据信号电压(VData)提供参考高电位(Vref)，所述第一扫描信号电压(Vsel1)、与第二扫描信号电压(Vsel2)提供低电位，所述第二、第三薄膜晶体管(T2、T3)关闭，由于存储电容(Cs)的存储作用，第一节点(a)即第一薄膜晶体管(T1)的栅极电位仍可继续保持在显示数据信号高电位(Vdata)，使得第一薄膜晶体管(T1)处于打开状态；所述第二节点(b)的电位即所述第一薄膜晶体管(T1)的源极电位仍为Vref-Vth+ΔV；
所述有机发光二极管(OLED)发光，且流经所述有机发光二极管(OLED)的电流与第一薄膜晶体管(T1)的阈值电压无关。
6.如权利要求5所述的AMOLED像素驱动方法，其特征在于，所述第一薄膜晶体管(T1)、第二薄膜晶体管(T2)、及第三薄膜晶体管(T3)均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管、或非晶硅薄膜晶体管。
7.如权利要求5所述的AMOLED像素驱动方法，其特征在于，所述第一扫描信号电压(Vsel1)、第二扫描信号电压(Vsel2)、及数据信号电压(VData)均通过外部时序控制器产生。
8.如权利要求5所述的AMOLED像素驱动方法，其特征在于，所述显示数据信号高电位(Vdata)高于参考高电位(Vref)。
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