CN1595477A - 显示装置 - Google Patents
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- CN1595477A CN1595477A CNA2004100742633A CN200410074263A CN1595477A CN 1595477 A CN1595477 A CN 1595477A CN A2004100742633 A CNA2004100742633 A CN A2004100742633A CN 200410074263 A CN200410074263 A CN 200410074263A CN 1595477 A CN1595477 A CN 1595477A
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Abstract
本发明减少显示装置的亮度斑点。半导体膜形成位置P1、P2是在各像素的驱动电路中控制光学元件的亮度的多个同一导电型晶体管的位置。将半导体膜形成位置P1、P2配置在形成半导体膜时的热处理的强度分布上强度同等程度的相同热处理强度的位置。并且,将半导体膜形成位置P1、P2配置在准分子激光退火那样的热处理的同一照射区域中,进而配置在与重叠照射中的重叠宽度相当的范围内。使在这些半导体膜形成位置P1、P2上形成的多个晶体管的特性均匀化。
Description
技术领域
本发明涉及显示装置,特别是涉及提高有源矩阵型显示装置的亮度特性。
背景技术
作为用有机薄膜EL元件的器件,平面发光型有机薄膜EL显示器令人注目。这种显示器将有机薄膜EL元件构造作为单位像素,将该单位像素平面二维地配置在1块支持基板上,进行矩阵驱动。
作为矩阵驱动用的元件,从能够内藏周边驱动电路、能够使像素电路的元件尺寸小、能够使用廉价的材料做支持基板这样的特长出发,可以用低温多晶硅TFT。
关于用于低温多晶硅TFT的多晶硅层的形成,一般通过用受激准分子激光器照射非晶硅进行退火的方法(ELA法)正在成为主流。作为已有的激光退火法,例如,我们已经知道了通过照射受激准分子激光器的脉冲线光束,扫描基板或激光束,进行扫描间隔中的重叠照射的方法。
可是,在这种线激光束中存在照射强度分布或照射间误差。为了解决照射强度分布或照射间误差引起的元件不均匀性,日本特开平9-321310号专利公报(专利文献1),日本特开平11-330000号专利公报(专利文献2)公开了进行激光束的45度扫描的技术,并且,日本特开平11-345783号专利公报(专利文献3)公开了进行2重扫描的技术。
另一方面,在平面发光型有机薄膜EL显示器中,当作为像素驱动电路用基本的2TFT方式时,发生由阈值电压、迁移率等的TFT特性的零散引起的亮度斑点。作为对付这种问题的方法,提出了各种像素电路的方案,例如,可以举出“A NewAMOLED Pixel Design bySelf-compensating Threshold Voltage Variation of Pol-Si TFT”(非专利文献1)中公开的电压程序电路和日本特开2001-147659号公报(专利文献4)中公开的电流照射镜型电流指定方式。在这种电路中,要求用于决定EL元件的驱动电流或补偿像素驱动电路的元件特性的多个同一导电型晶体管的特性一致。
[专利文献1]
日本特开平9-321310号公报(第4页,图1)
[专利文献2]
日本特开平11-330000号公报(第3页,图1)
[专利文献3]
日本特开平11-345783号公报(第3页,图1)
[专利文献4]
日本特开2001-147659号公报(第7、8、9页,图1)
[非专利文献1]
“A New AMOLED Pixel Design by Self-compensating ThresholdVoltage Variation of Pol-Si TFT”(Sang-Hoon Jung等,AM-LCD 02、2002INTERNATIONAL WORKSHOP ON ACTIVE-MATRIXLIQUID-CRYSTAL DISPLAYS,THE JAPAN SOCIETY OF APPLIEDPHYSICS,July 10-12,2002,13~16页)
发明内容
可是,在改善上述受激准分子激光器的照射强度分布,并减少照射间误差的方法中,即便能够提高整体的均匀性,要使像素内的晶体管特性均匀一致也是困难的。
又,当采取如上述文献公开那样的复杂的电路构成时,存在着用于像素驱动电路的元件数增多,降低孔径率那样的问题。
本发明就是在上述背景下提出的,本发明的目的是提供通过使像素内的特定的晶体管特性均匀化、减少亮度斑点的技术。本发明的另一目的是提供即便在元件多的像素驱动电路中也能够提高孔径率的技术。
本发明的显示装置具有将在像素区域内控制光学元件亮度的多个同一导电型晶体管的半导体膜,配置在半导体膜形成时的热处理强度分布上强度为相同程度的位置的构成。
在本发明中,控制亮度的多个同一导电型晶体管,例如,是决定发光元件的驱动电流量的晶体管,并且,是用于补偿像素驱动电路的元件特性的晶体管。多个同一导电型晶体管典型的是负载(duty)控制亮度的点亮用晶体管和熄灭用晶体管。
本发明考虑在显示装置的制造过程的热处理中,当察看一个像素内的热处理强度分布时,强度根据位置而杂乱。而且,本发明着眼于这种一个像素内的热处理强度分布,在加上相同程度强度的热处理的位置(以下,适当地称为相同热处理强度位置)上,配置控制亮度的多个同一导电型晶体管。因此能够使晶体管特性高度均匀化,能够减少亮度斑点。
也可以与热处理的扫描方向并列地配置上述多个同一导电型晶体管。能够减少由热处理区域的长度方向(一般与扫描方向成直角)的热处理强度分布引起的晶体管特性的不均匀性。
本发明的其他方式也涉及显示装置。本装置具有将控制像素区域内的光学元件的亮度的多个同一导电型晶体管的半导体膜,配置在形成半导体膜时的热处理的同一激光照射区域中的构成。本发明可以很好地应用于一面改变激光照射位置一面反复激光照射型的热处理的显示装置。如果根据本发明,则能够减少由照射间的误差引起的晶体管特性的不均匀性,能够减少亮度斑点。优选是在上述热处理强度分布中考虑的相同热处理强度的位置,并且将上述多个晶体管配置在同一激光照射区域中,因此能够进一步减少亮度斑点。
也可以将上述多个同一导电型的晶体管配置在与热处理的重叠照射中的重叠宽度相当的范围内。能够进一步减少由照射间误差引起的晶体管特性的不均匀性。
进一步,也可以接近地配置上述多个同一导电型晶体管。将上述多个晶体管更接近地配置在相同热处理强度的位置内,并且,更接近地配置在同一激光照射区域内。因此,能够减少由半导体的膜厚不均引起的晶体管特性的不均匀性,能够进一步减少亮度斑点。
并且,在本发明中,也可以根据杂质掺杂处理的布置将多个同一导电型晶体管配置在同一掺杂区域内。能够削除像素内不要的空间,减少亮度斑点,并且能够提高孔径率。多个同一导电型晶体管,典型地,包含上述亮度控制用的晶体管,但是也可以不限于此,我们将用后述的实施方式进行说明。
此外,通过以上的构成要素的任意组合和改编,表现本发明的方法,作为本发明的方式是有效的。
附图说明
图1是表示可以很好地应用本发明的显示装置的例子的图。
图2是表示图1的显示装置的动作的图。
图3是表示本发明的实施方式中的半导体膜形成位置的配置的图。
图4是表示本发明的实施方式中的半导体膜形成位置的配置的图。
图5是表示本发明的实施方式中的半导体膜形成位置的配置的图。
图6是表示本发明的实施方式中的半导体膜形成位置的配置的图。
图7是表示本发明的实施方式中的像素电路图案的图。
图8是表示可以很好地应用本发明的显示装置的别的例子的图。
图9是表示本发明的别的实施方式中的像素电路图案的图。
具体实施方式
下面,参照附图说明本发明的实施方式。
图1表示显示装置的一个像素的电路构成例。图1表示可以很好地应用本发明的显示装置的例子。如图1所示,该像素电路10具有发光元件EL及其驱动电路。而且,驱动电路如图中从左下到右上所示的那样,由数据设定用晶体管M1和关联的电容器C1、熄灭用晶体管M2、点亮用晶体管M3、初始化用晶体管M5和关联的电容器C2、第1及第2辅助晶体管M4、M6、和驱动晶体管M7构成。
在这些构成要素中,初始化用晶体管M5的栅极与重置信号线RST连接,源极与第1电源供给线PVDD连接,漏极与第1、第2辅助晶体管M4、M6的栅极连接。电容器C2具有固定重置后的第1、第2辅助晶体管M4、M6的栅极电位的功能。
第1、第2辅助晶体管M4、M6构成逆变器,第2辅助晶体管M6的源极与第1电源供给线PVDD连接,第1辅助晶体管M4的源极经过点亮用晶体管M3与第2电源供给线VCC连接,第1电源供给线PVDD的电位比第2电源供给线VCC的电位高。而且,第1、第2辅助晶体管M4、M6的漏极与驱动晶体管M7的栅极连接。
驱动晶体管M7是向发光元件EL供给电力并使其发光的晶体管,源极与第1电源供给线PVDD连接,漏极与发光元件EL连接。
点亮用晶体管M3和熄灭用晶体管M2,分别是为了点亮和熄灭发光元件EL而设置的。点亮用晶体管M3和熄灭用晶体管M2的源极与第2电源供给线VCC连接,点亮用晶体管M3的漏极与第1辅助晶体管M4的源极连接,熄灭用晶体管M2的漏极与第1、第2辅助晶体管M4、M6的栅极连接。
下面,我们说明用于负载控制发光元件EL的亮度的构成。如图所示,点亮用晶体管M3的栅极与灯信号线RMP连接。熄灭用晶体管M2的栅极与数据设定用晶体管M1的漏极连接。而且,数据设定用晶体管M1的源极与数据线DATA连接,栅极与扫描线SEL连接。并且,在熄灭用晶体管M2的栅极和灯信号线RMP之间配置用于保持电压的电容器C1。
图2是表示图1的显示装置的动作的定时图。我们参照图1和图2说明上述显示装置的动作。
作为1帧的动作,首先重置信号线RST的重置信号成为低电平。结果,初始化用晶体管M5导通,将第1电源供给线PVDD的电位设定在第1、第2辅助晶体管M4、M6的栅极上。因此,第1辅助晶体管M4导通,第2辅助晶体管M6断开。
其次,扫描线SEL的扫描信号成为高电平。因为当扫描信号成为高电平时数据设定用晶体管M1导通,所以数据设定用晶体管M1的漏极电位和源极电位大致相等。即熄灭用晶体管M2的栅极电位Vg2与数据线DATA的电位大致相等。
现在,在扫描线SEL的扫描信号成为高电平期间,将数据线DATA的电位设定在Vdata上。当令数据线DATA的电位Vdata和灯信号线RMP的电位Vrmp之差为Din时,给出Din=Vrmp-Vdata,由电压Din对电容器C1进行充电。当在时刻T0扫描线SEL的扫描信号成为低电平时数据设定用晶体管M1断开。结果,加在电容器C1上的电压被固定在时刻T0的电压Din上。
下面,增大灯信号线RMP的电位。在灯信号线RMP和第2电源供给线VCC的电位差,即点亮用晶体管M3的栅极源极电压达到点亮用晶体管M3的阈值电压Vt的时刻T1,点亮用晶体管M3导通。结果,驱动晶体管M7的栅极电位降低而导通,发光元件EL发光。
并且,图2表示了灯信号和熄灭用晶体管M2的栅极电位Vg2。熄灭用晶体管M2的栅极电位Vg2比灯信号线RMP低的电位只是加在电容器C1上的电压,但是该加在电容器C1上的电压在时刻T0成为设定的电压值Vdata。从而,熄灭用晶体管M2的栅极电位Vg2一面维持比灯信号的电位Vrmp,即点亮用晶体管的栅极电位低的电压Vdata的状态,一面随着灯信号的电位Vrmp而增大。熄灭用晶体管M2的栅极源极电压,如图2所示,在比点亮用晶体管M3迟的时刻T2达到阈值电压Vt。因此熄灭用晶体管M2导通,第1辅助晶体管M4断开,第2辅助晶体管M6导通。结果,驱动晶体管M7因该栅极电位接近第1电源供给线PVDD的电位而断开,发光元件EL停止发光。
在以上的1帧的发光动作中,发光期间Te是从时刻T1到时刻T2,即在点亮用晶体管M3导通后到熄灭用晶体管M2导通的期间。因为该发光期间Te与点亮用晶体管M3的栅极电位和熄灭用晶体管M2的栅极电位Vg2的电位差,即,在时刻T0的电容器C1的电压Vdata相应地变化,所以给予数据线DATA的电位决定负载比。这样一来,能够实现图1的显示装置的负载控制。
下面,我们根据上述例子,说明本发明的优选实施方式。
在图2的例子中,灯信号RMP与点亮用晶体管M3的栅极源极电压对应,并且,熄灭用晶体管M2的栅极电位Vg2与同一晶体管的栅极源极电压对应。所以,图2的控制,以点亮用晶体管M3和熄灭用晶体管M2的阈值电压Vt相等为前提,即以两者的特性相等为前提,对亮度进行控制。换句话说,当点亮用晶体管M3和熄灭用晶体管M2的特性不同时,在图2的亮度控制的发光期间Te中发生误差,该误差成为亮度斑点的原因。所以,为了减少亮度斑点,使点亮用晶体管M3和熄灭用晶体管M2的特性一致是有效的。
上述点亮用晶体管M3和熄灭用晶体管M2是本发明中控制亮度的多个同一导电型晶体管的例子。如下面说明的那样,本发明提出了能够使这种像素内的多个同一导电型晶体管的特性均匀化的技术。
图3表示本发明的第1实施方式。图3是形成晶体管的半导体膜时的状态,表示像素区域的非晶硅膜F。
当形成半导体膜时,对非晶硅膜F实施热处理。在本实施方式中,热处理是ELA(受激准分子激光器退火)。在ELA中,如图所示的细长的准分子激光束L沿扫描方向Y进行扫描。扫描方向Y与准分子激光束L的光束长度方向X成直角。
这里,我们考虑两个同一导电型晶体管。作为本实施方式的特征,这些晶体管的半导体膜形成位置P1、P2与扫描方向Y并列地配置。因此,将半导体膜形成位置P1、P2配置在光束长度方向X中相同位置上。即,以多晶硅区域是在光束长度方向X中的同一区域中,进行光束照射的方式设定图案。这种配置的理由如下所述。
如图3的上方所示,准分子激光束L具有沿光束长度方向X的强度分布f(x)。在扫描过程中维持该强度分布。所以,如果半导体膜形成位置P1、P2与扫描方向Y并列,即,如果光束长度方向X的照射位置相同,则进行照射的光束的强度相同。
如上述那样,如果根据本发明,则将半导体膜形成位置P1、P2配置在形成半导体膜时的热处理的强度分布上强度同等程度的位置。因此,能够使在半导体膜形成位置P1、P2上形成的晶体管的特性均匀化。更详细地说,本发明着眼于这种一个像素内的热处理强度分布,在施加同等程度的强度的热处理的位置,配置多个同一导电型晶体管。因此能够使晶体管特性高度均匀化。
特别是,本发明使多个晶体管的半导体膜形成位置与热处理的扫描方向并列,因此,能够减少由热处理区域的长度方向(一般与扫描方向成直角)的热处理强度分布引起的晶体管特性的不均匀性。
此外,在图3的例子中,半导体膜形成位置P1、P2的位置在光束长度方向中完全重叠。即,在图中的X方向,半导体膜形成位置P1、P2的X坐标相同,但是本发明不限于此。在光束强度实质上相同的范围内半导***置P1、P2的X坐标既可以是偏移的,也可以是例如位置P1、P2部分地重叠。
图4表示本发明的其他的实施方式。在图3的实施方式中,半导体膜形成位置P1、P2配置为晶体管的半导体膜的长度方向与光束长度方向X平行。所以,与此相对,在图4的实施方式中,半导体膜形成位置P1、P2配置为晶体管的半导体膜的长度方向与光束长度方向X成直角。
在图4的实施方式中,使半导体膜形成位置P1、P2与准分子激光束L的扫描方向Y并列,配置在热处理分布上热处理强度同等程度的位置。所以可以同样得到上述的本发明的优点。
图5表示本发明的其他的实施方式。在该实施方式中,将半导体膜形成位置P1、P2配置在准分子激光束L的同一激光照射区域中,特别是,如下面说明的那样,配置在与准分子激光束L的重叠照射中的重叠宽度W相当的范围中。
例如,准分子激光束L的光束宽度D为300微米,作为重叠照射进行10次照射。这时,准分子激光束L的照射位置每次偏移30微米。该偏移的宽度为图5的重叠宽度W。
在本实施方式中,将半导体膜形成位置P1、P2配置在与重叠宽度W相当的范围内。在图5的例子中,以成为与激光束长度方向平行并且等距离地排列的区域的方式配置半导体膜形成位置P1、P2。所以,只将同一激光照射的准分子激光束L照射在半导体膜形成位置P1、P2上。
如以上说明的那样,如果根据本发明,则因为将半导体膜形成位置P1、P2配置在形成半导体膜时的热处理的同一激光照射区域中,所以能够进一步减少由发射间误差引起的晶体管特性的不均匀性。
在本发明中,进一步将半导体膜形成位置P1、P2配置在与热处理的重叠照射中的重叠宽度相当的范围内,因此对于半导体膜形成位置P1、P2只进行同一激光照射,能够进一步减少由照射间误差引起的晶体管特性的不均匀性。
图6表示本发明的其他的实施方式。该实施方式,与上述图3和图5的构成的组合相当,与扫描方向Y并列地配置半导体膜形成位置P1、P2,并且配置在同一激光照射区域中。而且,即使在同一激光照射区域中也配置在重叠照射的重叠宽度的范围内。在图6的例子中,以与激光束长度方向平行并且在同一区域中进入光束重叠宽度内的方式配置半导体膜形成位置P1、P2。
如果根据本发明,则通过减少由热处理强度分布引起的特性杂乱,并且减少由照射间的杂乱引起的特性参差不齐,可以使晶体管特性更进一步地均匀化。
下面,我们说明本发明的其他的实施方式。本实施方式是在图3~图6的构成中,更接近地配置半导体膜形成位置P1、P2。更具体地说,使与半导体膜形成位置P1、P2对应的多个多晶硅膜图案间接近设置直到可以形成元件的最小尺寸为止。
如果根据本发明,则能够减少由半导体膜厚杂乱引起的晶体管特性的不均匀性,能够使晶体管特性更进一步地均匀化。
下面,我们说明本发明的其他的实施方式。本实施方式是在图3~图6的构成中,根据杂质掺杂处理的布置在同一掺杂区域内配置多个同一导电型晶体管。更具体地说,采用在一个像素内,在一个掩蔽区域中形成杂质的掺杂掩蔽区域那样的构成。
图7表示本实施方式的例子。图7的构成与图1的像素电路相当。即,图7的晶体管M1~M7、电容器C1、C2和发光元件EL与图1的相同标号的元件对应。
而且,如图所示,在本实施方式中,接近地配置点亮用晶体管M3和熄灭用晶体管M2,将两者配置在同一个N+掺杂区域100中。进而,在图7中,也将称为数据设定用晶体管M1、第1辅助晶体管M4的同一导电型晶体管配置在同一个N+掺杂区域100中。并且,也将逆向沟道的同一导电型晶体管M5、M6、M7配置在同一个P+掺杂区域200中。
如上所述,如果根据本发明,则因为根据杂质掺杂处理的布置在同一掺杂区域内配置多个同一导电型晶体管,所以能够削除像素内的不要空间,能够提高孔径率。关于这一点,多个同一导电型晶体管,如上所述,可以不限于用于亮度控制的点亮和熄灭用晶体管。
并且,在本发明中,优选接近地配置晶体管,并且如上所述地采用根据杂质掺杂布置的配置。因此能够使本发明的优点更加显著。
下面,图8表示可以适用本发明的又一个显示装置的例子。在图8中,作为像素驱动电路,备有晶体管M1、M2、M3。其中,将晶体管M1用于数据设定。而且将晶体管M2、M3分别用于熄灭和点亮。用这些晶体管M2、M3与图1同样地控制发光期间Te,进行负载控制。
在图8的例子中,关于晶体管M2、M3,可以采用上述图3~图6所示的配置,使晶体管特性均匀化。并且,可以接近地配置晶体管M2、M3。进而,图9表示与图8的电路相当的图案,在图9的图案上,可以根据杂质掺杂的布置根据本发明适当地设定晶体管M1、M2、M3的配置。
以上我们说明了本发明的各种优选实施方式。如上所述,如果根据本发明,则能够使控制亮度数据的多个导电型晶体管的特性均匀化,因此能够减少亮度斑点。
图1的点亮用晶体管M3和熄灭用晶体管M2也能够决定发光元件的驱动电流。所以,本发明能够使决定发光元件的驱动电流量的多个同一导电型晶体管的特性均匀化,因此能够减少亮度斑点。
进而,图1的点亮用晶体管M3和熄灭用晶体管M2,从即便两个晶体管M3、M2的特性发生相同的偏移也能够正确地进行亮度控制(在图2中即便发光时期发生偏移发光期间Te也不变)的观点来看,也可以说对像素驱动电路的元件特性进行了补偿。所以,本发明能够使补偿像素驱动电路的元件特性的多个同一导电型晶体管的特性均匀化,因此能够减少亮度斑点。
进而,点亮用晶体管M3和熄灭用晶体管M2,如已经说明的那样可以用于控制发光元件的亮度负载。所以,本发明能够使亮度负载控制中的点亮用晶体管和熄灭用晶体管的特性均匀化,因此能够减少亮度斑点。
以上,通过实施方式说明了本发明。这些实施方式只是一些例示,关于它们的各构成要素和各处理过程的组合可以具有各种不同的变形例,这些变形例也在本发明的范围内,这些对于本领域的技术人员来说是可以理解的。例如,热处理不限定于ELA,只要能够一面照射某种能量波一面移动光源和基板的方法,不管它的类型如何均可使用。作为一个例子,也可以是用YAG激光器和氩激光器的激光器退火。并且,也可以是灯退火、快速热退火。
本发明能够减少亮度斑点,在以有源矩阵型显示装置为代表的显示装置领域中是有用的。
Claims (10)
1.一种显示装置,其特征在于,在形成半导体膜时的热处理的强度分布中强度为同等程度的位置,形成有在像素区域内控制光学元件的亮度的多个同一导电型的晶体管。
2.根据权利要求1所述的显示装置,其特征在于,所述多个同一导电型的晶体管是亮度负载控制中的点亮用晶体管和熄灭用晶体管。
3.根据权利要求1所述的显示装置,其特征在于,与热处理的扫描方向并列地配置所述多个同一导电型的晶体管。
4.根据权利要求1所述的显示装置,其特征在于,将所述多个同一导电型的晶体管配置在热处理的同一照射区域中。
5.根据权利要求1所述的显示装置,其特征在于,接近地配置所述多个同一导电型的晶体管。
6.根据权利要求1所述的显示装置,其特征在于,根据杂质掺杂处理的布置,将所述多个同一导电型的晶体管配置在同一掺杂区域内。
7.一种显示装置,其特征在于,在形成半导体膜时的热处理的同一照射区域中,形成有在像素区域内控制光学元件亮度的多个同一导电型晶体管的半导体膜。
8.根据权利要求5所述的显示装置,其特征在于,将所述多个同一导电型的晶体管配置在与热处理的重叠照射中的重叠宽度相当的范围内。
9.根据权利要求5所述的显示装置,其特征在于,接近地配置所述多个同一导电型的晶体管。
10.根据权利要求5所述的显示装置,其特征在于,根据杂质掺杂处理的布置,将所述多个同一导电型的晶体管配置在同一掺杂区域内。
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WO2022000695A1 (zh) * | 2020-07-02 | 2022-01-06 | 深圳市华星光电半导体显示技术有限公司 | 一种像素驱动电路、显示面板以及显示装置 |
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US8654045B2 (en) * | 2006-07-31 | 2014-02-18 | Sony Corporation | Display and method for manufacturing display |
US8304354B2 (en) * | 2010-04-22 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods to avoid laser anneal boundary effect within BSI CMOS image sensor array |
US8933866B2 (en) | 2012-08-23 | 2015-01-13 | Blackberry Limited | Active matrix pixel brightness control |
CN105185300B (zh) * | 2015-08-03 | 2017-07-28 | 深圳市华星光电技术有限公司 | Amoled像素驱动电路及像素驱动方法 |
US11783760B2 (en) * | 2021-09-09 | 2023-10-10 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel circuit and display panel |
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JP3424891B2 (ja) * | 1996-12-27 | 2003-07-07 | 三洋電機株式会社 | 薄膜トランジスタの製造方法および表示装置 |
JPH10229197A (ja) * | 1997-02-17 | 1998-08-25 | Sanyo Electric Co Ltd | 薄膜トランジスタ、薄膜トランジスタの製造方法 |
JPH1184418A (ja) * | 1997-09-08 | 1999-03-26 | Sanyo Electric Co Ltd | 表示装置 |
KR100980904B1 (ko) * | 2002-06-07 | 2010-09-07 | 소니 주식회사 | 표시 장치와 그 제조 방법, 및 투사형 표시 장치 |
JP4813743B2 (ja) * | 2002-07-24 | 2011-11-09 | 株式会社 日立ディスプレイズ | 画像表示装置の製造方法 |
KR100669270B1 (ko) * | 2003-08-25 | 2007-01-16 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 표시 장치 및 광전 변환 소자 |
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WO2022000695A1 (zh) * | 2020-07-02 | 2022-01-06 | 深圳市华星光电半导体显示技术有限公司 | 一种像素驱动电路、显示面板以及显示装置 |
US11410615B2 (en) | 2020-07-02 | 2022-08-09 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel driving circuit, display panel and display device |
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