CN105118878B - Cigs的锑化合物掺杂方法 - Google Patents
Cigs的锑化合物掺杂方法 Download PDFInfo
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- CN105118878B CN105118878B CN201510448016.3A CN201510448016A CN105118878B CN 105118878 B CN105118878 B CN 105118878B CN 201510448016 A CN201510448016 A CN 201510448016A CN 105118878 B CN105118878 B CN 105118878B
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- cigs
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- antimonial
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000000843 powder Substances 0.000 claims abstract description 51
- 150000001875 compounds Chemical class 0.000 claims abstract description 47
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 238000010298 pulverizing process Methods 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract 2
- 239000011669 selenium Substances 0.000 claims description 68
- 229910052711 selenium Inorganic materials 0.000 claims description 18
- 229910017629 Sb2Te3 Inorganic materials 0.000 claims description 17
- 229910052787 antimony Inorganic materials 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- -1 chalcogenide Compound Chemical class 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000007873 sieving Methods 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical class [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000007670 refining Methods 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 25
- 239000010409 thin film Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 20
- 229910002804 graphite Inorganic materials 0.000 description 20
- 239000010439 graphite Substances 0.000 description 20
- 238000002360 preparation method Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052714 tellurium Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000498 ball milling Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000001727 in vivo Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 239000003708 ampul Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000039 congener Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/385—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510448016.3A CN105118878B (zh) | 2015-07-28 | 2015-07-28 | Cigs的锑化合物掺杂方法 |
Applications Claiming Priority (1)
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CN201510448016.3A CN105118878B (zh) | 2015-07-28 | 2015-07-28 | Cigs的锑化合物掺杂方法 |
Publications (2)
Publication Number | Publication Date |
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CN105118878A CN105118878A (zh) | 2015-12-02 |
CN105118878B true CN105118878B (zh) | 2017-09-19 |
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CN201510448016.3A Active CN105118878B (zh) | 2015-07-28 | 2015-07-28 | Cigs的锑化合物掺杂方法 |
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Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101217178B (zh) * | 2007-12-26 | 2010-12-29 | 中国科学院上海硅酸盐研究所 | 一类锑化钼基热电材料的制备方法 |
CN100582266C (zh) * | 2008-04-15 | 2010-01-20 | 成都先锋材料有限公司 | 铜铟镓硒光伏材料真空熔炼方法和装置 |
TW201425620A (zh) * | 2012-11-05 | 2014-07-01 | Mitsubishi Materials Corp | 濺鍍靶及其之製造方法 |
CN103194722B (zh) * | 2013-03-28 | 2016-04-27 | 深圳首创新能源股份有限公司 | 制造太阳能电池的方法 |
CN103643052B (zh) * | 2013-10-25 | 2016-04-13 | 北京科技大学 | 一种超磁致伸缩材料凝固组织均匀化的制备方法 |
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2015
- 2015-07-28 CN CN201510448016.3A patent/CN105118878B/zh active Active
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CN105118878A (zh) | 2015-12-02 |
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Effective date of registration: 20180110 Address after: 214000 Jiangsu Province, Wuxi city Huishan District No. 592 West 2104 hashimori bank money Patentee after: Jiangsu first energy photovoltaic technology Co., Ltd. Address before: 610000 Chengdu Hi-tech Development Zone West area of Sichuan Province Patentee before: Chengdu Pioneer Materials Inc. |
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Address after: 214000 Jiangsu Province, Wuxi city Huishan District No. 592 West 2104 hashimori bank money Patentee after: JIANGSU XIANNENG MATERIAL Co.,Ltd. Address before: 214000 Jiangsu Province, Wuxi city Huishan District No. 592 West 2104 hashimori bank money Patentee before: Jiangsu first energy photovoltaic technology Co., Ltd. |
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