CN207398068U - 一种制备铜铟镓硒化合物的装置 - Google Patents
一种制备铜铟镓硒化合物的装置 Download PDFInfo
- Publication number
- CN207398068U CN207398068U CN201721463168.1U CN201721463168U CN207398068U CN 207398068 U CN207398068 U CN 207398068U CN 201721463168 U CN201721463168 U CN 201721463168U CN 207398068 U CN207398068 U CN 207398068U
- Authority
- CN
- China
- Prior art keywords
- temperature
- indium
- gallium
- quartz ampoule
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229940065287 selenium compound Drugs 0.000 title claims abstract description 28
- 239000010453 quartz Substances 0.000 claims abstract description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 238000001704 evaporation Methods 0.000 claims abstract description 58
- 230000008020 evaporation Effects 0.000 claims abstract description 55
- 239000003708 ampul Substances 0.000 claims abstract description 50
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000005485 electric heating Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 20
- 229910001370 Se alloy Inorganic materials 0.000 abstract description 13
- 239000004615 ingredient Substances 0.000 abstract description 8
- 239000011669 selenium Substances 0.000 description 39
- 239000002002 slurry Substances 0.000 description 32
- 238000000576 coating method Methods 0.000 description 28
- 229910052738 indium Inorganic materials 0.000 description 24
- 239000011248 coating agent Substances 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 23
- 239000010949 copper Substances 0.000 description 23
- 238000002360 preparation method Methods 0.000 description 22
- 229910052711 selenium Inorganic materials 0.000 description 22
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 21
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 20
- 229910052733 gallium Inorganic materials 0.000 description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- 238000001035 drying Methods 0.000 description 19
- 239000000126 substance Substances 0.000 description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- 238000000137 annealing Methods 0.000 description 15
- 239000000843 powder Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000005361 soda-lime glass Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical class CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 229940116411 terpineol Drugs 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 230000000750 progressive effect Effects 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 238000013019 agitation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229920002678 cellulose Chemical class 0.000 description 2
- 239000001913 cellulose Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000005909 ethyl alcohol group Chemical group 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004034 viscosity adjusting agent Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/005—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out at high temperatures, e.g. by pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/0073—Sealings
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
- B01J2219/00277—Apparatus
- B01J2219/00279—Features relating to reactor vessels
- B01J2219/00331—Details of the reactor vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
- B01J2219/00583—Features relative to the processes being carried out
- B01J2219/00594—Gas-phase processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (9)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721463168.1U CN207398068U (zh) | 2017-11-06 | 2017-11-06 | 一种制备铜铟镓硒化合物的装置 |
EP18195753.1A EP3480857A1 (en) | 2017-11-06 | 2018-09-20 | Device for preparing multi-element alloy compound |
PCT/CN2018/107005 WO2019085679A1 (zh) | 2017-11-06 | 2018-09-21 | 一种制备多元合金化合物的装置 |
US16/139,111 US20190136345A1 (en) | 2017-11-06 | 2018-09-24 | Device for preparing multi-element alloy compound |
CA3018689A CA3018689A1 (en) | 2017-11-06 | 2018-09-26 | Device for preparing multi-element alloy compound |
JP2018003730U JP3219221U (ja) | 2017-11-06 | 2018-09-26 | 多元合金化合物の製造装置 |
KR2020180004447U KR20190001161U (ko) | 2017-11-06 | 2018-09-27 | 다성분 합금 화합물을 제조하는 장치 |
AU2018101483A AU2018101483A4 (en) | 2017-11-06 | 2018-10-04 | Device for preparing multi-element alloy compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721463168.1U CN207398068U (zh) | 2017-11-06 | 2017-11-06 | 一种制备铜铟镓硒化合物的装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207398068U true CN207398068U (zh) | 2018-05-22 |
Family
ID=62324882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201721463168.1U Active CN207398068U (zh) | 2017-11-06 | 2017-11-06 | 一种制备铜铟镓硒化合物的装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190136345A1 (zh) |
EP (1) | EP3480857A1 (zh) |
JP (1) | JP3219221U (zh) |
KR (1) | KR20190001161U (zh) |
CN (1) | CN207398068U (zh) |
AU (1) | AU2018101483A4 (zh) |
CA (1) | CA3018689A1 (zh) |
WO (1) | WO2019085679A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019085679A1 (zh) * | 2017-11-06 | 2019-05-09 | 北京铂阳顶荣光伏科技有限公司 | 一种制备多元合金化合物的装置 |
WO2019085678A1 (zh) * | 2017-11-06 | 2019-05-09 | 北京铂阳顶荣光伏科技有限公司 | 多元合金化合物及其油墨、薄膜吸收层和它们的制备方法 |
CN112680781A (zh) * | 2020-12-09 | 2021-04-20 | 清远先导材料有限公司 | 碲化镉晶体生长装置及其生长方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818636A (en) * | 1981-12-30 | 1989-04-04 | Stauffer Chemical Company | Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
JPS59113180A (ja) * | 1982-12-21 | 1984-06-29 | Fuji Electric Co Ltd | 蒸着装置 |
JP3026504B2 (ja) * | 1990-10-09 | 2000-03-27 | 東京エレクトロン株式会社 | トラップ装置 |
US7582506B2 (en) * | 2005-03-15 | 2009-09-01 | Solopower, Inc. | Precursor containing copper indium and gallium for selenide (sulfide) compound formation |
CN102071329B (zh) * | 2010-11-25 | 2012-04-25 | 清远先导材料有限公司 | 一种铜铟镓硒合金的制备方法 |
CN103088301B (zh) * | 2013-01-17 | 2015-07-01 | 中国科学院过程工程研究所 | 一种铜铟镓硒薄膜的硒化处理装置、方法及铜铟镓硒薄膜器件 |
CN103255367B (zh) * | 2013-04-28 | 2015-07-29 | 柳州百韧特先进材料有限公司 | 太阳能电池cigs吸收层靶材的制备方法 |
CN108039392A (zh) * | 2017-11-06 | 2018-05-15 | 北京汉能薄膜发电技术有限公司 | 铜铟镓硒化合物、油墨及其薄膜吸收层制备方法 |
CN207398068U (zh) * | 2017-11-06 | 2018-05-22 | 北京汉能薄膜发电技术有限公司 | 一种制备铜铟镓硒化合物的装置 |
-
2017
- 2017-11-06 CN CN201721463168.1U patent/CN207398068U/zh active Active
-
2018
- 2018-09-20 EP EP18195753.1A patent/EP3480857A1/en not_active Withdrawn
- 2018-09-21 WO PCT/CN2018/107005 patent/WO2019085679A1/zh active Application Filing
- 2018-09-24 US US16/139,111 patent/US20190136345A1/en not_active Abandoned
- 2018-09-26 JP JP2018003730U patent/JP3219221U/ja active Active
- 2018-09-26 CA CA3018689A patent/CA3018689A1/en not_active Abandoned
- 2018-09-27 KR KR2020180004447U patent/KR20190001161U/ko not_active IP Right Cessation
- 2018-10-04 AU AU2018101483A patent/AU2018101483A4/en not_active Ceased
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019085679A1 (zh) * | 2017-11-06 | 2019-05-09 | 北京铂阳顶荣光伏科技有限公司 | 一种制备多元合金化合物的装置 |
WO2019085678A1 (zh) * | 2017-11-06 | 2019-05-09 | 北京铂阳顶荣光伏科技有限公司 | 多元合金化合物及其油墨、薄膜吸收层和它们的制备方法 |
CN112680781A (zh) * | 2020-12-09 | 2021-04-20 | 清远先导材料有限公司 | 碲化镉晶体生长装置及其生长方法 |
CN112680781B (zh) * | 2020-12-09 | 2023-10-03 | 清远先导材料有限公司 | 碲化镉晶体生长装置及其生长方法 |
Also Published As
Publication number | Publication date |
---|---|
US20190136345A1 (en) | 2019-05-09 |
JP3219221U (ja) | 2018-12-06 |
CA3018689A1 (en) | 2019-05-06 |
EP3480857A1 (en) | 2019-05-08 |
WO2019085679A1 (zh) | 2019-05-09 |
KR20190001161U (ko) | 2019-05-15 |
AU2018101483A4 (en) | 2018-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108039392A (zh) | 铜铟镓硒化合物、油墨及其薄膜吸收层制备方法 | |
CN207398068U (zh) | 一种制备铜铟镓硒化合物的装置 | |
US20190311889A1 (en) | Synthesis of high-purity bulk copper indium gallium selenide materials | |
US9196768B2 (en) | Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate | |
US8323408B2 (en) | Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation | |
CN102712996A (zh) | 溅射靶、化合物半导体薄膜、具有化合物半导体薄膜的太阳能电池以及化合物半导体薄膜的制造方法 | |
CN109652762A (zh) | 一种锑硫硒合金薄膜的制备方法 | |
Sun et al. | High-sulfur Cu2ZnSn (S, Se) 4 films by sulfurizing as-deposited CZTSe film: The evolutions of phase, crystallinity and S/(S+ Se) ratio | |
Chen et al. | Low-temperature growth of Na doped CIGS films on flexible polymer substrates by pulsed laser ablation from a Na containing target | |
Long et al. | Mechanistic aspects of preheating effects of precursors on characteristics of Cu2ZnSnS4 (CZTS) thin films and solar cells | |
Atasoy et al. | Cu (In, Ga)(Se, Te) 2 films formed on metal foil substrates by a two-stage process employing electrodeposition and evaporation | |
US20140256082A1 (en) | Method and apparatus for the formation of copper-indiumgallium selenide thin films using three dimensional selective rf and microwave rapid thermal processing | |
JP2011091228A (ja) | 光導変換半導体層の製造方法 | |
US20190301050A1 (en) | Single-Crystal Production Equipment and Single-Crystal Production Method | |
CN210956716U (zh) | 一种持续提供活性硒的装置 | |
CN104505462A (zh) | 一种有机金属卤化物薄膜及其制备方法与应用 | |
CN105742385B (zh) | 一种铜铁锌锡硫微米单晶颗粒及其制备方法和在制备太阳能电池方面的应用 | |
CN109402573B (zh) | 一种大尺寸基板蒸镀装置及利用该蒸镀装置制备CdTe太阳能镀膜的方法 | |
CN105118878B (zh) | Cigs的锑化合物掺杂方法 | |
CN105803392B (zh) | 一种Na掺杂Cu2ZnSn(S1-xSex)4薄膜的制备方法 | |
CN218842321U (zh) | 一种用于多阶段硒化硫化制备铜铟镓硒硫薄膜的装置 | |
Ma et al. | Effect of aluminum incorporation on the microstructure and electrical properties of Cu (InGaAl) Se2 targets | |
CN101698931B (zh) | 一种制备超晶格热电薄膜材料的双闪蒸法装置 | |
Chang et al. | CuInSe2 coatings prepared using solvothermal-synthesized CuInSe2 particles | |
Forbes et al. | Rf sputtering of high-quality Cu/In precursor layers and conversion to CuInS 2 using elemental sulfidization processes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180724 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee after: BEIJING BOYANG DINGRONG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: No. 0-A, Chaoyang District, Beijing, Beijing Patentee before: Beijing hina film Power Technology Co. Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190505 Address after: 224051 Nanyang Town Sanjian Neighborhood Committee Group II (Hanneng Industrial Park) 4,5 blocks in Tinghu District, Yancheng City, Jiangsu Province Patentee after: Jiangsu Yancheng Grabao Equipment Technology Co., Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: BEIJING BOYANG DINGRONG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210422 Address after: 518054 Room 201, building a, No.1 Qianwan 1st Road, Haishen Hong Kong cooperation zone, Shenzhen City, Guangdong Province Patentee after: Hongyi Technology Co.,Ltd. Address before: 224051 Nanyang Town Sanjian Neighborhood Committee Group II (Hanneng Industrial Park) 4,5 blocks in Tinghu District, Yancheng City, Jiangsu Province Patentee before: Jiangsu Yancheng Grabao Equipment Technology Co.,Ltd. |