CN105067168A - Test method for residual stress of subsurface of grinding wafer - Google Patents
Test method for residual stress of subsurface of grinding wafer Download PDFInfo
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- CN105067168A CN105067168A CN201510420054.8A CN201510420054A CN105067168A CN 105067168 A CN105067168 A CN 105067168A CN 201510420054 A CN201510420054 A CN 201510420054A CN 105067168 A CN105067168 A CN 105067168A
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Abstract
The invention provides a test method for the residual stress of a subsurface of a grinding wafer, and belongs to the field of tests of the residual stress. The method includes steps: providing the grinding wafer; cleaning the wafer via high-pressure water; fixing the wafer; determining the corrosion position, and performing corrosion and cleaning; testing the corrosion depth and the residual stress by respectively employing a white light interferometer and a laser Raman spectroscopy; and repeating the above experiment steps to obtain the residual stress value of the subsurface of the grinding wafer. According to the method, the operation is simple, the residual stress for grinding the subsurface of the wafer can be accurately obtained, and an optimized scheme of the grinding process can be proposed via the analysis of test results.
Description
Technical field
The present invention relates to the sub-surface residual stress method of testing of a kind of grinding wafer, particularly a kind of method of distribute corrosion and the sub-surface residual stress of Raman spectrum test grinding wafer.
Background technology
Along with the develop rapidly of IC manufacturing technology, in order to increase IC chip output, reduce unit making cost, wafer trend ever-larger diameters, wafer size develops into now widely used 8 inches from initial 2 inches, even towards more large scale future development.Along with diameter wafer increases, in order to ensure that wafer has enough intensity, the thickness also corresponding increase of wafer.The average thickness of current 8 inch wafer 725 microns, and 12 inch wafer average thicknesss have been increased to 775 microns, in contrast, for meeting the needs of IC chip package, improve the reliability of IC especially Power IC, reduce thermal resistance, improve heat-sinking capability and the yield rate of chip, require chip thickness slimming, the average thickness of chip every two years reduces half.Current chip thickness oneself be reduced to the IC chip thickness such as 100-200 micron, smart card, MEMS and biomedical sensor and reduced to less than 100 microns, the integrated and three-dimensional encapsulation chip of the three-dimensional of high density electronic structure needs thickness to be less than the ultra-thin wafer of 50 microns especially.
The thinning ability of wafer is the key determining wafer thickness, and the thinning technique of current main flow is that wafer spin turns grinding technique, but mechanical processing process unavoidably causes the damage of crystal column surface, and damage will cause unrelieved stress.Unrelieved stress is a kind of internal stress, and the existence of unrelieved stress will cause the warpage of wafer and impel the extension of underbead crack, causes breaking of wafer, brings great challenge to the transmission of wafer.The damage layer depth of wafer is tens microns under normal circumstances, and unrelieved stress also exists in certain depth range.At present, mainly adopt Raman spectrum to carry out Non-Destructive Testing to the detection of grinding crystal column surface unrelieved stress, then need to carry out mechanical microsection manufacture section sample to wafer to the detection of the sub-surface residual stress of wafer.But slicing processes can introduce new cutting unrelieved stress can discharge part grinding residual stress, affects the accuracy of residual stress test simultaneously.
The corrosion of " Young " solution substep constantly can be removed corrosion region material and be reached sub-surface, can not introduce new unrelieved stress, less to residual stress test Influence on test result.
Summary of the invention
The invention provides the sub-surface residual stress method of testing of a kind of grinding wafer, comprise experimental technique and data processing method.Experimental technique mainly solves the test of corrosion depth and the test problem of the sub-surface residual stress of grinding wafer, and data processing method mainly solves calculating and the residual stress calculation problem of corrosion depth.Experimental principle is simple, easy to operate, reliable results.
The sub-surface residual stress method of testing of a kind of grinding wafer, is characterized in that, comprise the following steps:
There is provided the monocrystalline silicon wafer crystal after grinding, clear water rinses crystal column surface, and fixing wafer also cleans with organic solvent; Determine test point, test point is positioned at <110> crystal orientation, along radius distribution, at least 3 test points, first test point is apart from wafer center of circle 10-15mm, and the second test point is apart from the first test point 40-60mm, and the 3rd test point is apart from the second test point 40-60mm; Utilize " Young " solution to corrode each test point, each measuring point corrodes 8 times altogether, and each etching time is respectively 2s, 3s, 4s, 5s, 10s, 15s, 25s, 40s, and each corrosion terminates all to use clean water corrosion region with etch-stop; Treat that corrosion region is dry, first utilize white light interferometer to measure corrosion depth, then utilize raman spectroscopy measurement unrelieved stress.
Further, the proportioning of described " Young " solution is H
2o:HF (mass percent concentration is 49%): Cr
2o
3=500ml:500ml:75g.
Further, it is characterized in that, Gauss curve fitting is carried out to Raman test curve.
More specifically: adopt etch, white light interferometer step by step to detect corrosion depth, Raman spectrometer is then utilized to detect the sub-surface residual stress of grinding wafer.In experimentation, first grinding is carried out to wafer, rinse crystal column surface to remove residual abrasive dust with water, wafer is fixed, with organic solvent (as acetone, alcohol) secondary cleaning wafer.Determine <110> crystal orientation, along 3 test points of radius distribution.Utilize " Young " solution to corrode each test point, each measuring point corrodes 8 times altogether, and each etching time is respectively 2s, 3s, 4s, 5s, 10s, 15s, 25s, 40s, uses clean water corrosion sites with etch-stop process after each corrosion.Wafer is fixed on the microscope carrier of white light interferometer, test corrosion depth; Then utilize Raman spectrum to test corrosion region unrelieved stress, Gauss curve fitting is carried out to Raman test result, finally calculates unrelieved stress.
The following useful effect that the present invention is desirable:
1. the experimental technique that the present invention proposes can solve the sub-surface residual stress of grinding wafer and test problem that is inaccurate and corrosion depth test difficulty.
2. the data processing method that the present invention proposes can accurately obtain residual-stress value and corrosion depth.
3. the method for testing principle of the present invention's proposition is simple, reliable, ensure that the accuracy of test result.
Accompanying drawing illustrates:
Fig. 1 is wafer grinding schematic diagram.
Fig. 2 is wafer location corrosion schematic diagram.
Fig. 3 is corrosion depth test schematic diagram.
Fig. 4 is residual stress distribution schematic diagram.
Fig. 5 is residual stress distribution schematic diagram in document.
Fig. 6 process flow diagram of the present invention
In figure:
1-emery wheel, wafer before 2-grinding, 3-sucker, 4-draw-in groove, wafer after 5-grinding, 6-register pin.
Embodiment
The method of testing that the present invention proposes comprises the following steps:
1: grinding wafer: adjustment milling drum grinding parameter, choose wafer to be ground, by wafer transfer to grinding station, sucker suction wafer, grinding wafer.
2: cleaning wafer: by mechanical arm by wafer transfer on rinsing table, rinse crystal column surface to remove residual abrasive dust.
3: wafer is fixed on fixture, with organic solvent secondary cleaning wafer, determine test position, " Young " solution is utilized to corrode each test point, each measuring point corrodes 8 times altogether, each etching time is respectively 2s, 3s, 4s, 5s, 10s, 15s, 25s, 40s, then cleans corrosion sites with etch-stop process.
4: wafer is fixed on the microscope carrier of white light interferometer, test corrosion depth; Utilize Raman spectrum to test corrosion region unrelieved stress, Gauss curve fitting is carried out to Raman test result, finally calculates unrelieved stress.
Below in conjunction with accompanying drawing, invention is described in detail:
Fig. 1 is wafer grinding schematic diagram, and adjust grinding parameter (emery wheel feed rate 0.8 μm/s, grinding wheel speed 5000r/min, wafer rotating speed 200r/min), wafer 2 is transferred to grinding station by transmission manipulator, is adsorbed by sucker 3; Emery wheel 1 slowly moves down and enters into grinding position, and emery wheel rotates around axis both clockwise, and wafer is rotated counterclockwise around axis, grinding thinned wafer.Be ground to the thickness of setting, stop grinding, wafer transfer to washing station, is carried out cleaning wafer surface by mechanical arm.
Fig. 2 is wafer location corrosion schematic diagram, is located by wafer, use acetone cleaning wafer, determine test position by draw-in groove 4 and register pin 6; Utilize " Young " solution (H
2o:HF49%:Cr
2o
3=500ml:500ml:75g) each test point is corroded, each measuring point corrodes 8 times altogether, and each etching time is respectively 2s, 3s, 4s, 5s, 10s, 15s, 25s, 40s, then cleans corrosion sites etch-stop process, treats wafer natural drying.
Fig. 3 is corrosion depth test schematic diagram, wafer is placed on the microscope carrier of white light interferometer, corrosion area aimed at by the object lens of white light interferometer, until there is interference fringe in adjustment instrument, the 3D figure in each corrosion post-etching district can be obtained, then 3D figure is imported the average height H that Vision software can calculate sample length L (250 μm-500 μm) scope internal corrosion district
c; Then, the 3D obtaining non-corrosion area in corrosion region edge schemes and imports the average height H that Vision software calculates non-corrosion region in sample length L (250 μm-500 μm) scope, gets H-H
cdifference is corrosion depth.
Fig. 4 is residual stress distribution schematic diagram, utilize the object lens of Raman spectrum to aim at corrosion region central area and carry out Raman spot scan, obtain Raman curve, carry out to Raman curve the side-play amount that Gauss curve fitting draws Raman main peak, side-play amount is multiplied by stress coefficient and is stress value.
By repeating step 2,3,4 can obtain the stress distribution under different depth.
Fig. 5 is residual stress distribution schematic diagram in document, and the sub-surface compress residual stresses value that in document, microtomy records is less, this is because slicing processes discharges part grinding residual stress.
Claims (3)
1. the sub-surface residual stress method of testing of grinding wafer, is characterized in that, comprise the following steps:
There is provided the monocrystalline silicon wafer crystal after grinding, clear water rinses crystal column surface, and fixing wafer also cleans with organic solvent; Determine test point, test point is positioned at <110> crystal orientation, along radius distribution, at least 3 test points, first test point is apart from wafer center of circle 10-15mm, and the second test point is apart from the first test point 40-60mm, and the 3rd test point is apart from the second test point 40-60mm; Utilize " Young " solution to corrode each test point, each measuring point corrodes 8 times altogether, and each etching time is respectively 2s, 3s, 4s, 5s, 10s, 15s, 25s, 40s, and each corrosion terminates all to use clean water corrosion region with etch-stop; Treat that corrosion region is dry, first utilize white light interferometer to measure corrosion depth, then utilize raman spectroscopy measurement unrelieved stress.
2. the sub-surface residual stress method of testing of a kind of grinding wafer as claimed in claim 1, it is characterized in that, the proportioning of described " Young " solution is H
2o:HF49%:Cr
2o
3=500ml:500ml:75g.
3. the sub-surface residual stress method of testing of a kind of grinding wafer as claimed in claim 1, is characterized in that, carry out Gauss curve fitting to Raman test curve.
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| CN112268507A (en) * | 2020-10-14 | 2021-01-26 | 江苏鑫汉电子材料有限公司 | Be applied to carborundum wafer's infrared detection device |
| CN112556905A (en) * | 2021-02-23 | 2021-03-26 | 紫创(南京)科技有限公司 | Stress detection device and detection method based on optical interference |
| CN112577647A (en) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | Stress test system and test method for semiconductor laser chip |
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| CN112577647A (en) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | Stress test system and test method for semiconductor laser chip |
| CN112577647B (en) * | 2020-11-26 | 2022-04-12 | 苏州长光华芯光电技术股份有限公司 | Stress test system and test method for semiconductor laser chip |
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| CN112556905B (en) * | 2021-02-23 | 2021-05-28 | 紫创(南京)科技有限公司 | Stress detection device and detection method based on optical interference |
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