CN104197848A - Double-frequency differential thickness measurement method and equipment - Google Patents
Double-frequency differential thickness measurement method and equipment Download PDFInfo
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- CN104197848A CN104197848A CN201410478641.8A CN201410478641A CN104197848A CN 104197848 A CN104197848 A CN 104197848A CN 201410478641 A CN201410478641 A CN 201410478641A CN 104197848 A CN104197848 A CN 104197848A
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Abstract
The invention provides a double-frequency differential thickness measurement method and equipment and belongs to the technical field of thickness measurement. The technical problems that measured pieces are easily damaged during measurement and the like in the prior art. The thickness measurement method includes the following procedures: a, placing a reference object; b, measuring distance s1 between the upper surface of the reference object and a first measurement head; c, measuring distance s2 between the lower surface of the reference object and a second measurement head; d, computing thickness h0 of the reference object; e, placing one measured piece; f, measuring distance s3 between the upper surface of the measured piece and the first measurement head; g, measuring distance s4 between the lower surface of the reference block and the second measurement head after the measured piece is placed; h, computing thickness hi of the measured piece. By the method and equipment, the measured pieces can be prevented from being damaged.
Description
Technical field
The invention belongs to thickness measurement technique field, relate to the differential method for measuring thickness of a kind of double frequency and equipment.
Background technology
In the precision engineering fields such as optics, semiconductor, optoelectronic information, high-precision thickness measure is very important.For example, the center thickness of lens is one of important indicators that determine its optical property.In semicon industry, to be finished to Precision Machining means, enter before polishing, need to carry out sorting according to thickness error to silicon single crystal flake, select the close wafer of thickness as a processing batch.
Existing high precision thickness measuring technique, is all based upon on the basis of high accuracy displacement sensor, applies more have inductance sensor, magneto strictive sensor, current vortex sensor, capacitive transducer, laser sensor, Fibre Optical Sensor.Wherein, inductance sensor, magneto strictive sensor belong to contact type measurement, and gauge head may form damage on measured piece surface, thereby affects properties of product.
Summary of the invention
First goal of the invention of the present invention is the problems referred to above that exist for existing technology, provides a kind of double frequency differential method for measuring thickness, and its technical matters to be solved is: how to avoid damaging in measuring process measured piece.
Object of the present invention can realize by following technical proposal:
The differential method for measuring thickness of a kind of double frequency, it comprises following operation:
A, place object of reference: be positioned over and detect between first and detection head two with reference to thing, adjust and detect first and detection head two, make to detect first and detection head two and aim at respectively upper surface and the lower surface of this object of reference;
Distance s1 between b, measurement object of reference upper surface and detection are first: the laser instrument one in detection trigger is first makes it launch laser one, described laser one is dispersed into two light beams one by detecting first interior spectroscope one, described light beam one sees through object lens one and is irradiated to object of reference upper surface and is referenced the reflection of thing upper surface, light beam one after being reflected is irradiated to and on two quadrant photoelectric cell one, forms hot spot one through object lens one, spectroscope one and eyepiece one successively, measures the distance s1 of object of reference upper surface between first with detection by the output signal of two quadrant photoelectric cell one;
C, measure the distance s2 between object of reference lower surface and detection head two: the laser instrument two in detection trigger two makes it launch laser two, described laser two is dispersed into two light beams two by the spectroscope two in detection head two, described light beam two sees through object lens two and is irradiated to object of reference lower surface and is referenced the reflection of thing lower surface, light beam two after being reflected is irradiated on two quadrant photoelectric cell two and forms hot spot two through object lens two, spectroscope two and eyepiece two successively, measures the distance s2 between object of reference lower surface and detection head two by the output signal of two quadrant photoelectric cell two;
The thickness h 0 of d, calculating object of reference: the distance s detecting between first and detection head two, the thickness h 0=s-of object of reference (s1+s2) are measured in supposition;
E, place measured piece: take off object of reference, by measured piece be positioned over object of reference with detection first between;
Distance s3 between f, measurement measured piece upper surface and detection are first: the laser instrument one in detection trigger is first makes it launch laser one, described laser one is dispersed into two light beams one by detecting first interior spectroscope one, described light beam one sees through object lens one and is irradiated to measured piece upper surface and is reflected by measured piece upper surface, light beam one after being reflected is irradiated to and on two quadrant photoelectric cell one, forms hot spot three through object lens one, spectroscope one and eyepiece one successively, measures the distance s3 of measured piece upper surface between first with detection by the output signal of two quadrant photoelectric cell one;
G, measure the distance s4 between measured piece lower surface and detection head two: the laser instrument two in detection trigger two makes it launch laser two, described laser two is dispersed into two light beams two by the spectroscope two in detection head two, described light beam two sees through object lens two and is irradiated to object of reference lower surface and is referenced the reflection of thing lower surface, light beam two after being reflected is irradiated on two quadrant photoelectric cell two and forms hot spot four through object lens two, spectroscope two and eyepiece two successively, measures the distance s4 between measured piece lower surface and detection head two by the output signal of two quadrant photoelectric cell two;
H, calculate the thickness h i:hi=s-s3-s4=h0+ (s1+s2)-(s3+s4) of measured piece.
Its principle of work is as follows: first measure the upper and lower surface of object of reference and detect the distance between first, detection head two by detecting first and detection head two, record the facula position on now two quadrant photoelectric cell one and two quadrant photoelectric cell two, facula position has determined the power of photoelectric cell two-way output signal, as larger in facula area in the I quadrant in two quadrant photoelectric cell, so I quadrant output current is greater than II quadrant.Again measured piece is put in detect between first and detection head two, on the position identical with object of reference, detecting face that the first laser sending one is irradiated to is the upper surface of measured piece, because there is thickness difference in measured object and object of reference, the measured object upper surface relatively before upper surface of object of reference produces displacement, folded light beam is offset, the hot spot that causes focusing on two quadrant photoelectric cell one produces displacement, and the two-way current signal power that photoelectric cell one is exported changes.Therefore, instrument is after demarcating, can infer measured piece displacement according to the variation of photoelectric cell output signal, in like manner, calculate the now distance between measured object lower surface and detection head two, finally calculate again the thickness h i:hi=h0+ (s1+s2) of measured piece-(s3+s4).In this testing process, detect first and detection head two and all do not touch measured piece, therefore can not cause damage to measured piece, and precision is higher.
In the above-mentioned differential method for measuring thickness of a kind of double frequency, the frequency of described laser one and laser instrument two is respectively f1 and f2 and both and varies in size.For transparent measured piece, the laser that detection head sends enters the detector of detection head two for a moment, causes to measure to lose efficacy.For this reason, the first laser instrument one different with detection head two proportions of detection of the present invention and laser instrument two, if gauge head 1 laser frequency is that f1, gauge head 2 laser frequency are f2, bandpass filter one is set before detection head 1 detector, and only to make frequency be that the light of f1 enters detector, it is the bandpass filter two that the light of f2 enters its detector that the same interior setting of detection head 2 only makes frequency, thereby, avoid the interference to detection head Stimulated Light.
The differential thickness measurement device of a kind of double frequency, described thickness measurement device comprises pedestal, detects first and detection head two, described detection is first to be arranged at intervals on described pedestal with detection head two and both are relative distributes, and between the first and detection head two of described detection, is placed with an object of reference; In described detection is first, be provided with laser instrument one, spectroscope one, object lens one, eyepiece one and two quadrant photoelectric cell one, the Laser emission direction of described laser instrument one is perpendicular to spectroscope one, described object lens one are arranged at the below of described spectroscope one and between this spectroscope one and the upper surface of object of reference, described two quadrant photoelectric cell one is positioned at the top of described spectroscope one, and described eyepiece one is arranged between described two quadrant photoelectric cell one and spectroscope one; In described detection head two, be provided with laser instrument two, spectroscope two, object lens two, eyepiece two and two quadrant photoelectric cell two, the Laser emission direction of described laser instrument two is perpendicular to spectroscope two, described object lens two are arranged at the top of described spectroscope two and between this spectroscope two and the lower surface of object of reference, described two quadrant photoelectric cell two is positioned at the below of described spectroscope two, and described eyepiece two is arranged between described two quadrant photoelectric cell two and spectroscope two.First measure the upper and lower surface of object of reference and detect the distance between first, detection head two by detecting first and detection head two, record the facula position on now two quadrant photoelectric cell one and two quadrant photoelectric cell two, facula position has determined the power of photoelectric cell two-way output signal, as larger in facula area in the I quadrant in two quadrant photoelectric cell, so I quadrant output current is greater than II quadrant.Again measured piece is put in detect between first and detection head two, on the position identical with object of reference, detecting face that the first laser sending one is irradiated to is the upper surface of measured piece, because there is thickness difference in measured object and object of reference, the measured object upper surface relatively before upper surface of object of reference produces displacement, folded light beam is offset, the hot spot that causes focusing on two quadrant photoelectric cell one produces displacement, and the two-way current signal power that photoelectric cell one is exported changes.Therefore, instrument is after demarcating, can infer measured piece displacement according to the variation of photoelectric cell output signal, in like manner, calculate the now distance between measured object lower surface and detection head two, finally calculate again the thickness h i:hi=h0+ (s1+s2) of measured piece-(s3+s4).
In the above-mentioned differential thickness measurement device of a kind of double frequency, the frequency of described laser one and laser instrument two is respectively f1 and f2 and both and varies in size.
In the above-mentioned differential thickness measurement device of a kind of double frequency, in described detection is first, be provided with the bandpass filter one that the laser one that is only f1 for frequency passes through; In described detection head two, be provided with the bandpass filter two that the laser two that is only f2 for frequency passes through.
Compared with prior art, the present invention has the following advantages:
1, first measure the upper and lower surface of object of reference and detect the distance between first, detection head two by detecting first and detection head two, record the facula position on now two quadrant photoelectric cell one and two quadrant photoelectric cell two, facula position has determined the power of photoelectric cell two-way output signal, as larger in facula area in the I quadrant in two quadrant photoelectric cell, so I quadrant output current is greater than II quadrant.Again measured piece is put in detect between first and detection head two, on the position identical with object of reference, detecting face that the first laser sending one is irradiated to is the upper surface of measured piece, because there is thickness difference in measured object and object of reference, the measured object upper surface relatively before upper surface of object of reference produces displacement, folded light beam is offset, the hot spot that causes focusing on two quadrant photoelectric cell one produces displacement, and the two-way current signal power that photoelectric cell one is exported changes.Therefore, instrument is after demarcating, can infer measured piece displacement according to the variation of photoelectric cell output signal, in like manner, calculate the now distance between measured object lower surface and detection head two, finally calculate again the thickness h i:hi=h0+ (s1+s2) of measured piece-(s3+s4).
Brief description of the drawings
Fig. 1 is the structural representation of the differential thickness measurement device of this double frequency in embodiment.
Fig. 2 is that in embodiment, this detects first fundamental diagram.
Fig. 3 is the fundamental diagram of this detection head two in embodiment.
In figure, 1, object of reference; 2, detect first; 21, laser instrument one; 22, spectroscope one; 23, object lens one; 24, eyepiece one; 25, two quadrant photoelectric cell one; 3, detection head two; 31, laser instrument two; 32, spectroscope two; 33, object lens two; 34, eyepiece two; 35, two quadrant photoelectric cell two.
Embodiment
Be below specific embodiments of the invention by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiment.
As shown in Figure 1, Figure 2, Figure 3 shows, the differential method for measuring thickness of this double frequency, it comprises following operation:
A, place object of reference 1: with reference to thing 1 be positioned over detect first 2 and detection head 23 between, adjust and detect first 2 and detection head 23, make to detect first 2 and detection head 23 aim at respectively upper surface and the lower surface of this object of reference 1;
B, measure object of reference 1 upper surface and detect the distance s1 between first 2: the laser instrument 1 in detection trigger first 2 makes it launch laser one, the frequency of laser one is f1, laser one is dispersed into two light beams one by the spectroscope 1 detecting in first 2, light beam one sees through object lens 1 and is irradiated to object of reference 1 upper surface and is referenced thing 1 upper surface reflection, light beam one after being reflected is successively through object lens 1, spectroscope 1 and eyepiece 1 are irradiated to and on two quadrant photoelectric cell 1, form hot spot one, measure object of reference 1 upper surface and detect the distance s1 between first 2 by the output signal of two quadrant photoelectric cell 1,
C, measure the distance s2 between object of reference 1 lower surface and detection head 23: the laser instrument 2 31 in detection trigger 23 makes it launch laser two, the frequency of laser two is f2, the size of f2 is different from f1, laser two is dispersed into two light beams two by the spectroscope 2 32 in detection head 23, light beam two sees through object lens 2 33 and is irradiated to object of reference 1 lower surface and is referenced thing 1 lower surface reflection, light beam two after being reflected is successively through object lens 2 33, spectroscope 2 32 and eyepiece 2 34 are irradiated to and on two quadrant photoelectric cell 2 35, form hot spot two, measure the distance s2 between object of reference 1 lower surface and detection head 23 by the output signal of two quadrant photoelectric cell 2 35,
The thickness h 0 of d, calculating object of reference 1: measure the distance s between detection first 2 and detection head 23, the thickness h 0=s-(s1+s2) of object of reference 1;
E, place measured piece: by measured piece be put in object of reference 1 and detect between first 2, and object of reference is identical before position on;
F, measure measured piece upper surface and detect the distance s3 between first 2: the laser instrument 1 in detection trigger first 2 makes it launch laser one, laser one is dispersed into two light beams one by the spectroscope 1 detecting in first 2, light beam one sees through object lens 1 and is irradiated to measured piece upper surface and is reflected by measured piece upper surface, light beam one after being reflected is successively through object lens 1, spectroscope 1 and eyepiece 1 are irradiated to and on two quadrant photoelectric cell 1, form hot spot three, measure measured piece upper surface and detect the distance s3 between first 2 by the output signal of two quadrant photoelectric cell 1,
G, measure the distance s4 between measured piece lower surface and detection head 23: the laser instrument 2 31 in detection trigger 23 makes it launch laser two, laser two is dispersed into two light beams two by the spectroscope 2 32 in detection head 23, light beam two sees through object lens 2 33 and is irradiated to measured object 1 lower surface and is reflected by measured object 1 lower surface, light beam two after being reflected is successively through object lens 2 33, spectroscope 2 32 and eyepiece 2 34 are irradiated to and on two quadrant photoelectric cell 2 35, form hot spot four, measure the distance s4 between object of reference 1 lower surface and detection head 23 by the output signal of two quadrant photoelectric cell 2 35,
H, calculate the thickness h i:hi=h0+ (s1+s2)-(s3+s4) of measured piece.
As shown in Figure 1, Figure 2, Figure 3 shows, this thickness measurement device comprises pedestal, detect first 2 and detection head 23, detects first 2 and is arranged at intervals on pedestal with detection head 23 and both are relative distributes, detect first 2 and detection head 23 between be placed with an object of reference 1; Detect and in first 2, be provided with laser instrument 1, spectroscope 1, object lens 1, eyepiece 1 and two quadrant photoelectric cell 1, the frequency of the laser one that laser instrument 1 is launched is f1, detects and in first 2, is provided with the bandpass filter one that the laser one that is only f1 for frequency passes through; The Laser emission direction of laser instrument 1 is perpendicular to spectroscope 1, object lens 1 are arranged at the below of spectroscope 1 and between this spectroscope 1 and the upper surface of object of reference 1, two quadrant photoelectric cell 1 is positioned at the top of spectroscope 1, and eyepiece 1 is arranged between two quadrant photoelectric cell 1 and spectroscope 1; In detection head 23, be provided with laser instrument 2 31, spectroscope 2 32, object lens 2 33, eyepiece 2 34 and two quadrant photoelectric cell 2 35, the frequency of the laser two that laser instrument 2 31 is launched is f2, the size of f2 is different from f1, is provided with the bandpass filter two that the laser two that is only f2 for frequency passes through in detection head 23.The Laser emission direction of laser instrument 2 31 is perpendicular to spectroscope 2 32, object lens 2 33 are arranged at the top of spectroscope 2 32 and between this spectroscope 2 32 and the lower surface of object of reference 1, two quadrant photoelectric cell 2 35 is positioned at the below of spectroscope 2 32, and eyepiece 2 34 is arranged between two quadrant photoelectric cell 2 35 and spectroscope 2 32.
Principle of work of the present invention is as follows: first measure the upper and lower surface of object of reference and detect the distance between first, detection head two by detecting first and detection head two, record the facula position on now two quadrant photoelectric cell one and two quadrant photoelectric cell two, facula position has determined the power of photoelectric cell two-way output signal, as larger in facula area in the I quadrant in two quadrant photoelectric cell, so I quadrant output current is greater than II quadrant.Again measured piece is put in detect between first and detection head two, on the position identical with object of reference, detecting face that the first laser sending one is irradiated to is the upper surface of measured piece, because there is thickness difference in measured object and object of reference, the measured object upper surface relatively before upper surface of object of reference produces displacement, folded light beam is offset, the hot spot that causes focusing on two quadrant photoelectric cell one produces displacement, and the two-way current signal power that photoelectric cell one is exported changes.Therefore, instrument, after demarcating, can be inferred measured piece displacement according to the variation of photoelectric cell output signal, in like manner, calculates the now distance between object of reference lower surface and detection head two, the last thickness h i:hi=s-s3-s4-ho that calculates again measured piece.
Measuring method provided by the invention and equipment, be applicable to all kinds of transparent or transparent materials, can be widely used in high precision, the thickness on-line measurement of the objects such as optical window, monocrystalline silicon or polysilicon chip, high-quality dynamo sheet, lithium battery pole plate such as measurement, quartz or the sapphire of optical lens center thickness.
Be below concrete several application implementations of the present invention:
I, detect first laser frequency 532nm, detection head dual-laser device frequency 785nm, measures for optical lens center thickness.Success replaces traditional contact type measurement mode, has avoided the damage of contact to lens in measuring process, and accuracy of detection, by bring up to ± 0.1 μ m of ± 3 μ m, has been improved to stability, the reliability of Automatic survey degree and measurement result, has replaced 3～5 workmans.
II, detect first laser frequency 532nm, detection head dual-laser device frequency 785nm, for high-quality rotor siliconized plate thickness monitor.Success replaces traditional contact type measurement mode, and accuracy of detection, by bring up to ± 0.1 μ m of ± 3 μ m, has been reduced to workman's labor capacity, has improved rotor siliconized plate integral thickness control accuracy, motor quality and homogeneity of product has been obtained significantly and improve.
III, detect first laser frequency 532nm, detection head dual-laser device frequency 785nm, for the thickness sorting after quartz wafer section.Success replaces traditional tapered roller sorting mode, and sharpness of separation, by bring up to ± 0.5 μ m of ± 5 μ m, has been met to the production requirement of modern crafts, has improved lapping efficiency and the product quality of quartz wafer.
Specific embodiment described herein is only to the explanation for example of the present invention's spirit.Those skilled in the art can make various amendments or supplement or adopt similar mode to substitute described specific embodiment, but can't depart from spirit of the present invention or surmount the defined scope of appended claims.
Claims (5)
1. the differential method for measuring thickness of double frequency, it comprises following operation:
A, place object of reference: be positioned over and detect between first and detection head two with reference to thing, adjust and detect first and detection head two, make to detect first and detection head two and aim at respectively upper surface and the lower surface of this object of reference;
Distance s1 between b, measurement object of reference upper surface and detection are first: the laser instrument one in detection trigger is first makes it launch laser one, described laser one is dispersed into two light beams one by detecting first interior spectroscope one, described light beam one sees through object lens one and is irradiated to object of reference upper surface and is referenced the reflection of thing upper surface, light beam one after being reflected is irradiated to and on two quadrant photoelectric cell one, forms hot spot one through object lens one, spectroscope one and eyepiece one successively, measures the distance s1 of object of reference upper surface between first with detection by the output signal of two quadrant photoelectric cell one;
C, measure the distance s2 between object of reference lower surface and detection head two: the laser instrument two in detection trigger two makes it launch laser two, described laser two is dispersed into two light beams two by the spectroscope two in detection head two, described light beam two sees through object lens two and is irradiated to object of reference lower surface and is referenced the reflection of thing lower surface, light beam two after being reflected is irradiated on two quadrant photoelectric cell two and forms hot spot two through object lens two, spectroscope two and eyepiece two successively, measures the distance s2 between object of reference lower surface and detection head two by the output signal of two quadrant photoelectric cell two;
The thickness h 0 of d, calculating object of reference: the distance s detecting between first and detection head two, the thickness h 0=s-of object of reference (s1+s2) are measured in supposition;
E, place measured piece: take off object of reference, by measured piece be positioned over object of reference with detection first between;
Distance s3 between f, measurement measured piece upper surface and detection are first: the laser instrument one in detection trigger is first makes it launch laser one, described laser one is dispersed into two light beams one by detecting first interior spectroscope one, described light beam one sees through object lens one and is irradiated to measured piece upper surface and is reflected by measured piece upper surface, light beam one after being reflected is irradiated to and on two quadrant photoelectric cell one, forms hot spot three through object lens one, spectroscope one and eyepiece one successively, measures the distance s3 of measured piece upper surface between first with detection by the output signal of two quadrant photoelectric cell one;
G, measure the distance s4 between measured piece lower surface and detection head two: the laser instrument two in detection trigger two makes it launch laser two, described laser two is dispersed into two light beams two by the spectroscope two in detection head two, described light beam two sees through object lens two and is irradiated to object of reference lower surface and is referenced the reflection of thing lower surface, light beam two after being reflected is irradiated on two quadrant photoelectric cell two and forms hot spot four through object lens two, spectroscope two and eyepiece two successively, measures the distance s4 between measured piece lower surface and detection head two by the output signal of two quadrant photoelectric cell two;
H, calculate the thickness h i:hi=s-s3-s4=h0+ (s1+s2)-(s3+s4) of measured piece.
2. the differential method for measuring thickness of double frequency according to claim 1, is characterized in that, the frequency of described laser one and laser instrument two is respectively f1 and f2 and both and varies in size.
3. the differential thickness measurement device of double frequency, described thickness measurement device comprises pedestal, detects first and detection head two, described detection is first to be arranged at intervals on described pedestal with detection head two and both are relative distributes, and between the first and detection head two of described detection, is placed with an object of reference; In described detection is first, be provided with laser instrument one, spectroscope one, object lens one, eyepiece one and two quadrant photoelectric cell one, the Laser emission direction of described laser instrument one is perpendicular to spectroscope one, described object lens one are arranged at the below of described spectroscope one and between this spectroscope one and the upper surface of object of reference, described two quadrant photoelectric cell one is positioned at the top of described spectroscope one, and described eyepiece one is arranged between described two quadrant photoelectric cell one and spectroscope one; In described detection head two, be provided with laser instrument two, spectroscope two, object lens two, eyepiece two and two quadrant photoelectric cell two, the Laser emission direction of described laser instrument two is perpendicular to spectroscope two, described object lens two are arranged at the top of described spectroscope two and between this spectroscope two and the lower surface of object of reference, described two quadrant photoelectric cell two is positioned at the below of described spectroscope two, and described eyepiece two is arranged between described two quadrant photoelectric cell two and spectroscope two.
4. the differential thickness measurement device of double frequency according to claim 3, is characterized in that, the frequency of described laser one and laser instrument two is respectively f1 and f2 and both and varies in size.
5. the differential thickness measurement device of double frequency according to claim 4, is characterized in that, is provided with the bandpass filter one that the laser one that is only f1 for frequency passes through in described detection is first; In described detection head two, be provided with the bandpass filter two that the laser two that is only f2 for frequency passes through.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105572072A (en) * | 2015-12-21 | 2016-05-11 | 中国科学院长春光学精密机械与物理研究所 | Transparent optical material group refractive index measuring device and method |
| CN106556348A (en) * | 2015-09-24 | 2017-04-05 | 上海思信科学仪器有限公司 | Sapphire thickness measurement equipment |
| CN108572368A (en) * | 2017-03-07 | 2018-09-25 | 台濠科技股份有限公司 | The method for measuring wafer thickness with infrared ray |
| CN110631465A (en) * | 2019-09-16 | 2019-12-31 | 太原理工大学 | Ash deposition and slagging on-line monitoring device and method based on capacitance principle differential measurement |
| CN111426293A (en) * | 2020-03-18 | 2020-07-17 | 漳州捷龙自动化技术有限公司 | Thickness measuring method |
| CN114502316A (en) * | 2021-02-26 | 2022-05-13 | 国立大学法人名古屋工业大学 | Laser processing device, thickness detection method, and thickness detection device |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01221605A (en) * | 1988-02-29 | 1989-09-05 | Mitsubishi Electric Corp | Thickness measuring instrument |
| CN2047780U (en) * | 1989-04-06 | 1989-11-15 | 清华大学 | Optical displacement sensor |
| CA2053839A1 (en) * | 1990-11-19 | 1992-05-20 | Werner Kramer | Thickening measuring instrument |
| US5485082A (en) * | 1990-04-11 | 1996-01-16 | Micro-Epsilon Messtechnik Gmbh & Co. Kg | Method of calibrating a thickness measuring device and device for measuring or monitoring the thickness of layers, tapes, foils, and the like |
| CN1476070A (en) * | 2002-07-16 | 2004-02-18 | 松下电器产业株式会社 | Method and apparatus for quantitatively quality checking of chip-like substrates |
| CN1940468A (en) * | 2005-09-30 | 2007-04-04 | 财团法人工业技术研究院 | Object-size measurement system and method |
| CN102155927A (en) * | 2011-03-22 | 2011-08-17 | 浙江大学 | Two-dimensional micro angle measuring device based on laser auto-collimation |
| CN102538686A (en) * | 2010-12-09 | 2012-07-04 | 财团法人金属工业研究发展中心 | Thickness measurement method |
| CN102679894A (en) * | 2012-06-11 | 2012-09-19 | 北京理工大学 | Method for measuring central thickness of reflecting type differential confocal lens |
-
2014
- 2014-09-18 CN CN201410478641.8A patent/CN104197848B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01221605A (en) * | 1988-02-29 | 1989-09-05 | Mitsubishi Electric Corp | Thickness measuring instrument |
| CN2047780U (en) * | 1989-04-06 | 1989-11-15 | 清华大学 | Optical displacement sensor |
| US5485082A (en) * | 1990-04-11 | 1996-01-16 | Micro-Epsilon Messtechnik Gmbh & Co. Kg | Method of calibrating a thickness measuring device and device for measuring or monitoring the thickness of layers, tapes, foils, and the like |
| CA2053839A1 (en) * | 1990-11-19 | 1992-05-20 | Werner Kramer | Thickening measuring instrument |
| CN1476070A (en) * | 2002-07-16 | 2004-02-18 | 松下电器产业株式会社 | Method and apparatus for quantitatively quality checking of chip-like substrates |
| CN1940468A (en) * | 2005-09-30 | 2007-04-04 | 财团法人工业技术研究院 | Object-size measurement system and method |
| CN102538686A (en) * | 2010-12-09 | 2012-07-04 | 财团法人金属工业研究发展中心 | Thickness measurement method |
| CN102155927A (en) * | 2011-03-22 | 2011-08-17 | 浙江大学 | Two-dimensional micro angle measuring device based on laser auto-collimation |
| CN102679894A (en) * | 2012-06-11 | 2012-09-19 | 北京理工大学 | Method for measuring central thickness of reflecting type differential confocal lens |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106556348A (en) * | 2015-09-24 | 2017-04-05 | 上海思信科学仪器有限公司 | Sapphire thickness measurement equipment |
| CN105572072A (en) * | 2015-12-21 | 2016-05-11 | 中国科学院长春光学精密机械与物理研究所 | Transparent optical material group refractive index measuring device and method |
| CN108572368A (en) * | 2017-03-07 | 2018-09-25 | 台濠科技股份有限公司 | The method for measuring wafer thickness with infrared ray |
| CN110631465A (en) * | 2019-09-16 | 2019-12-31 | 太原理工大学 | Ash deposition and slagging on-line monitoring device and method based on capacitance principle differential measurement |
| CN110631465B (en) * | 2019-09-16 | 2021-04-16 | 太原理工大学 | Ash deposition and slagging on-line monitoring device and method based on capacitance principle differential measurement |
| CN111426293A (en) * | 2020-03-18 | 2020-07-17 | 漳州捷龙自动化技术有限公司 | Thickness measuring method |
| CN114502316A (en) * | 2021-02-26 | 2022-05-13 | 国立大学法人名古屋工业大学 | Laser processing device, thickness detection method, and thickness detection device |
| CN114502316B (en) * | 2021-02-26 | 2022-12-27 | 国立大学法人名古屋工业大学 | Laser processing device, thickness detection method and thickness detection device |
| CN114518072A (en) * | 2022-02-22 | 2022-05-20 | 江苏铁锚玻璃股份有限公司 | Device applied to transparent part thickness detection and using method thereof |
| CN114518072B (en) * | 2022-02-22 | 2023-08-29 | 江苏铁锚玻璃股份有限公司 | Device applied to thickness detection of transparent piece and application method thereof |
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