CN105051898A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN105051898A
CN105051898A CN201480015666.2A CN201480015666A CN105051898A CN 105051898 A CN105051898 A CN 105051898A CN 201480015666 A CN201480015666 A CN 201480015666A CN 105051898 A CN105051898 A CN 105051898A
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semiconductor
semiconductor device
unit
fixed
semiconductor unit
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CN105051898B (zh
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饭塚祐二
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

本发明提供一种使构成半导体装置的基本结构通用，实现生产效率的提高，并且能够确保充分的冷却性能的半导体装置。该半导体装置具备：支撑板(3)，其具有第一面(3a)、位于第一面(3a)相反侧的第二面(3b)和从第一面(3a)贯通至第二面(3b)的贯通孔(16)；和半导体单元(2)，其具有半导体芯片(15)和突出的金属块(14)，半导体单元(2)固定于支撑板(3)的第一面(3a)，金属块(14)穿过贯通孔(16)而贯通至第二面(3b)。

Description

半导体装置
技术领域
本发明涉及一种半导体装置，特别涉及一种搭载了功率半导体芯片的功率半导体模块。
背景技术
在逆变器装置、无停电电源装置、机床、工业用机器人等中，使用有与其主体装置相独立的半导体装置(功率半导体模块)。
作为现有的功率半导体模块，已知有例如专利文献1所记载的功率半导体模块。现有的功率半导体模块的结构如图4所示。该功率半导体模块由散热器(heatsink)101、绝缘基板103、半导体芯片102、树脂壳体104等构成。散热器101由导热性好的基底101a以及散热片101b构成。并且，在基底101a上固定有安装了半导体芯片102的绝缘基板103。另外，半导体芯片102以及绝缘基板103被树脂壳体104所包围。并且，在半导体芯片102的正面电极接合有键合线105，其与绝缘基板103的电路板106电连接。另外，树脂壳体104的上端由盖107覆盖，贯通盖107并向上方突出的外部端子108配置在电路板106上。
另外，在专利文献2中，记载了多个半导体单元和螺栓栓固单元通过弹性粘接剂而一体化，并通过螺栓栓固单元能够固定至散热器的功率半导体模块。
现有技术文献
专利文献
专利文献1：日本特开2007-194442号公报
专利文献2：日本特开2011-142124号公报
发明内容
技术问题
随着近年来对电力变换装置的需求加大，以及半导体芯片特性的提高，因此需要根据需求准备各种各样规格的功率半导体模块。
在专利文献1所记载的功率半导体模块中，需要根据各种规格分别准备半导体芯片102、绝缘基板103、树脂壳体104、盖体107以及端子108。
并且，由于制造所需要的治具和工具也需要对应于各种规格，所以存在难以降低制造成本的问题。
另一方面，在专利文献2所记载的功率半导体模块通过组合多个同一规格的半导体单元，从而能够准备各种规格的功率半导体模块。然而，当规格为大容量需要很多半导体单元时，中央部的半导体单元与螺栓栓固单元分离地配置。另外，因为各半导体单元以及螺栓栓固单元是通过弹性粘接剂而固定的，向散热器的压接力难以传递到与螺栓栓固单元分离的半导体单元。因此，存在搭载于该半导体单元的半导体芯片的冷却効率降低的问题。
所以，本发明着眼于上述现有例中的问题点，其目的在于，提供一种使构成半导体装置的基本结构通用，实现生产效率的提高，并且能够确保充分的冷却效率的半导体装置。
技术方案
为了达成上述目的，本发明的半导体装置具备：支撑板，其具有第一面、位于第一面的相反侧的第二面和从第一面贯通至第二面的贯通孔；和半导体单元，其具有半导体芯片、外部电极和突出的金属块，半导体单元固定于第一面，金属块穿过贯通孔而贯通至第二面。
发明效果
根据本发明，能够提供一种能够使半导体装置的基本结构通用，实现生产效率的提高，并且能够确保充分的冷却效率的半导体装置。
附图说明
图1是示出本发明的第一实施方式的半导体装置的一个实施方式的剖面图。
图2是示出图1的半导体单元的扩大剖面图。
图3是示出本发明的第二实施方式的半导体装置的一个实施方式的剖面图。
图4是示出现有例的剖面图。
符号的说明
1、50半导体装置
2半导体单元
3支撑板
3a第一面
3b第二面
4散热器
12绝缘板
13电路板
14金属块
14a外螺纹部
15半导体芯片
16贯通孔
16a内螺纹部
17安装孔
18布线基板
19～21连接端子
22封固树脂
23保护膜
25外部端子
29～31端子部
32筐体
40导热板
41螺栓
42螺母
具体实施方式
以下，参考图1～图3对本发明的实施方式进行说明。
应予说明，本申请的记述中所使用的“电气地且机械地连接”的用语不限于对象物之间通过直接接合而连接的情况，也包括对象物之间经由焊料和/或金属烧结材料等的导电性的接合材料而连接的情况。
图1是示出本发明的半导体装置的第一实施方式的整体结构的剖面图，图2是示出图1的半导体单元的扩大剖面图。
作为本发明的半导体装置的功率半导体模块1，具备半导体单元2和支撑板3。并且，支撑板3固定于散热器4。
半导体单元2如图2所示，具有半导体芯片15和金属块14。另外，半导体单元2还具有电路板13、绝缘板12、外部电极19、20、21和封固树脂22等。
半导体芯片15是例如绝缘栅双极型晶体管(IGBT)、功率MOSFET或续流二极管(FWD)等的功率半导体元件。
金属块14为圆柱状，从封固树脂22向外侧突出。并且，该突出部分的厚度比支撑板3的厚度厚，另外在其外周面具备外螺纹部14a。外螺纹部14a能够通过精密机器加工而形成。
支撑板3具有第一面3a、位于第一面3a的相反侧的第二面3b、和从第一面3a贯通至第二面3b的贯通孔16。另外，在贯通孔16的内周面，具有与外螺纹部14a对应的内螺纹部16a。内螺纹部16a能够通过精密机器加工而形成。此外，支撑板3在外沿具有安装孔17。支撑板3由例如导热性好的Cu或Al、线膨胀系数低的W或Mo等单体材料构成。或者，支撑板3由导热性好且线膨胀系数低的Cu-C、Al-C、Al-SiC、Cu-Mo、Cu、Cu-W、Si-SiC等复合材料构成。
另外，与电路板13对置地配置有具有金属层18a的布线基板18。并且，导电柱18b的一端电气地且机械地与布线基板18的金属层18a连接。另外，导电柱18b的另一端电气地且机械地与半导体芯片15的正面电极或者电路板13连接。也就是说，半导体单元2的内部布线不是通过现有的键合线，而是通过布线基板18以及导电柱18b进行的。另外，连接端子19、20、21电气地且机械地与电路板13和/或布线基板18的金属层18b连接。
绝缘板12、电路板13、半导体芯片15和布线基板18被例如环氧树脂等为热硬化性树脂的封固树脂22覆盖。另外，封固树脂22在其侧面具备用于延长沿面距离的凹凸结构。另外，如图2所示，封固树脂22优选在其表面具备由Al2O3、AlN、Si3N4、SiO2、BM等无机材料构成的保护膜23。并且，金属块14以及连接端子19～21从封固树脂22向外侧突出。
并且，使用金属块14的外螺纹部14a，将具有上述结构的两个半导体单元2从第一面3a侧螺纹连接到支撑板3的内螺纹部16a。并且，使封固树脂22的底面与支撑板3的上表面接触而固定于支撑板3。并且在这时，金属块14的端面从支撑板3的第二面3b突出预定距离。
另外，具备对从两个半导体单元2分别突出的连接端子19～21之间进行电连接来构成期望的电路而得到的外部端子25。外部端子25由例如为平板形状的母线26、27、28和与这些母线连接的端子部29、30、31构成。
并且，由绝缘树脂等构成的筐体32覆盖半导体单元2和/或外部端子25，使端子部29～31从筐体32向外侧突出。由此，构成本发明的一个形态的成为二合一的功率半导体模块的半导体装置1。
并且，在使用具有上述结构的半导体装置1的情况下，半导体装置1固定于散热器4的固定面4a。对齐支撑板3的安装孔17和散热器4的内螺纹部4b的位置，将止动螺栓33插通到安装孔17，并与内螺纹部4b进行螺纹连接。这时，由于两个半导体单元2的金属块14的端面从支撑板3的第二面3b突出相同高度，所以金属块14和固定面4a直接接触。
如此，根据上述实施方式，将具有半导体芯片15和突出的金属块14的半导体单元2固定于支撑板3，该支撑板3通过止动螺栓33固定于散热器4。由此，能够在支撑板3组合多个同一规格的半导体单元2，而能够准备各种规格的功率半导体模块。另外，半导体单元2的金属块14直接与散热器4接触。因此，从半导体芯片15散发的热经由金属块14能够直接向散热器4散热，能够改善冷却效率。
另外，由于多个半导体单元2通过螺纹连接固定于支撑板3，因此能够正确地调整从第二面3b突出的突出量。因此，能够良好地保持散热器4的固定面4a和各半导体单元2的金属块14之间的接触状态。而且，如专利文献2所记载，由于能够不经由弹性粘接剂而经由支撑板3使半导体单元2压接于散热器4，所以即使是中央部的半导体单元也能够确保其充分的冷却效率。
另外，由于仅通过螺纹连接即可使半导体单元2固定于支撑板3，因此能够降低制造成本。
另外，如上述的现有例，在搭载了半导体芯片102的绝缘基板103直接通过焊接等而接合至散热器101的基底101a的情况下，需要用于定位的治具和工具。并且，在散热板和基底101a之间需要夹着焊料，不能使散热板和基底101a直接接触，并且在多个绝缘基板103接合于基底101a的情况下，无法在确保平坦度的同时进行接合。然而，在本实施方式中，由于如上所述，将半导体单元2的金属块14与支撑板3进行螺纹连接，因此通过进行高精度的机器加工，能够对金属块14从支撑板3突出的突出量进行准确地调整，能够准确地确保位于多个半导体单元2的金属块14的端面的平坦度。
图3是示出本发明的半导体装置的第二实施方式的整体结构的剖面图。在图3中，对与图1所示的半导体装置1相同的部件标记相同的符号，以下省略重复的记载。
作为本发明的半导体装置的一个形态的功率半导体模块50还具备导热板40和螺栓41。
导热板40具有第一面40a和位于其相反侧的第二面40b。导热板40的第二面40b使用粘接材料等固定于筐体32的端子面32a。另外，筐体32的从端子面32a突出的外部端子25的端子部29～31，以弯曲为L字状的状态插通到在导热板40的第二面40b设置的端子孔41。并且，端子部29～31通过从第一面40a插通的螺栓42以及从第二主面插通的螺母43而固定。这时，优选在筐体32的端子面32a形成嵌入螺母43并进行止动的凹部50。
由此，在半导体装置50中，能够改善筐体32的从端子面32a侧的散热特性。另外，通过使用设置于导热板40的第一面40a的联结孔44，能够进一步将外部装置固定于半导体装置50。其理由为，因为导热板40使用粘接剂以及螺栓42和螺母43固定的端子部29～31这两个单元，牢固地与筐体32固定。
应予说明，在上述实施方式中，针对使半导体单元2的金属块14从支撑板3的第二面3b突出的情况进行了说明，但并不限定于此。例如，也可以使金属块14的端面和支撑板3的第二面3b在同一平面。
另外，在上述实施方式中，对通过导电柱18b以及布线基板18将半导体芯片15和连接端子19～21进行电连接的情况进行了说明。然而本发明并不限定于上述结构，只要有突出的金属块14，也可以如现有例那样，使用键合线进行电连接。
另外，在上述实施方式中，对半导体单元2为具备绝缘板12的绝缘型的半导体单元的情况进行了说明，但并不限定于此。例如，即使是没有绝缘板12的非绝缘型的半导体单元也能够如上述那样固定于支撑板3。
另外，在上述实施方式中，对在支撑板3固定了两个半导体单元2的情况进行了说明，但并不限定于此。只要根据期望的规格所需要的半导体单元的数量在支撑板3形成具有内螺纹部16a的贯通孔16即可。
另外，在上述实施方式中，对在半导体单元2具有一个半导体芯片15的情况进行了说明，但并不限定于此，也可以在电路板13固定两个以上的半导体芯片。
另外，在上述实施方式中，对通过止动螺栓33将支撑板3固定于散热器4的情况进行了说明，但并不限定于此，也可以使固定于散热器4的外螺纹部插通到支撑板3，并从第一面3a突出，使螺母与该外螺纹部进行螺纹连接。也就是说，使由支撑板3支撑的金属块在与散热器4接触的状态下被固定即可，能够使用任意的固定方法。
以上，通过附图以及实施方式对本发明的半导体装置进行了具体地说明，但本发明的半导体装置不限定于实施方式以及附图所记载的半导体装置，在不脱离本发明的主旨的范围内可以进行许多变形。

Claims (12)

1.一种半导体装置，具备：
支撑板，其具有第一面、位于所述第一面的相反侧的第二面和从所述第一面贯通至所述第二面的贯通孔；和
半导体单元，其具有半导体芯片和突出的金属块，所述半导体单元固定于所述第一面，所述金属块穿过所述贯通孔而贯通至所述第二面。
2.根据权利要求1所述的半导体装置，其中，
所述半导体单元还具有绝缘板，以及固定于所述绝缘板的正面的电路板，
所述半导体芯片固定于所述电路板，
所述金属块固定于所述绝缘板的背面。
3.根据权利要求1所述的半导体装置，其中，
所述金属块从所述第二面突出。
4.根据权利要求1所述的半导体装置，其中，
所述金属块具备外螺纹部，
所述贯通孔具备内螺纹部，
所述半导体单元通过所述外螺纹部和所述内螺纹部的螺纹连接而固定于所述第一面。
5.根据权利要求1所述的半导体装置，其中，
所述支撑板具有多个所述贯通孔，
在所述多个贯通孔分别固定有多个所述半导体单元。
6.根据权利要求5所述的半导体装置，其中，
所述半导体单元还具有外部电极，
所述半导体装置还具备外部端子，其与多个所述半导体单元具有的所述外部电极分别连接。
7.根据权利要求6所述的半导体装置，还具备：
筐体，其覆盖多个所述半导体单元以及所述外部端子；和
导热板，其固定于所述筐体。
8.根据权利要求7所述的半导体装置，
所述导热板具有供所述外部端子***的端子孔。
9.根据权利要求1所述的半导体装置，
所述半导体单元具有覆盖所述半导体芯片的封固树脂。
10.根据权利要求1所述的半导体装置，其中，
所述支撑板由Cu、Al、Mo、W、Cu-C、Al-C、Al-SiC、Cu-Mo、Si-SiC中的任意一种构成。
11.根据权利要求1所述的半导体装置，其中，
所述半导体单元在侧面具有凹凸。
12.根据权利要求1所述的半导体装置，其中，
所述半导体单元在表面具有由Al2O3、AlN、Si3N4、SiO2、BN中的任意一种构成的保护膜。
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