CN104952569A - Sheet-type resistor with low resistance and manufacture method of sheet-type resistor - Google Patents
Sheet-type resistor with low resistance and manufacture method of sheet-type resistor Download PDFInfo
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- CN104952569A CN104952569A CN201510171371.0A CN201510171371A CN104952569A CN 104952569 A CN104952569 A CN 104952569A CN 201510171371 A CN201510171371 A CN 201510171371A CN 104952569 A CN104952569 A CN 104952569A
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Abstract
The invention relates to a sheet-type resistor with low resistance and a manufacture method of the sheet-type resistor. The manufactured sheet-type resistor with low resistance, self independence, relatively high mechanical strength and durableness is simple in structure; the method is easy and fast to implement; the sheet-type resistor with low resistance is characterized in that a structure that resistive layers are formed on the surface and the back surface of an insulation base plate or a structure that the insulation base plates are formed on the surface and the back surface of the resistive layer is adopted, wherein in the former structure, a protection film is formed in the middle of the resistive layer in the long size direction, surface and back surface electrodes are formed on the resistive layers at two sides of the protection film; and in the later structure, the surface and back surface electrodes are formed on the resistive layer at two sides of the base plates, and end surface electrodes are formed on the surface and back surface electrodes in the width direction.
Description
The application is female case is following divisional application of applying for:
Application number: 200980160900.X
The applying date: on August 11st, 2009
Denomination of invention: low-resistance chip resistor and manufacture method thereof.
Technical field
The present invention relates to the chip resistor particularly chip resistor of low resistance device and manufacture method thereof.
Background technology
Recently, in order to protect the overcurrent rushing in multi-functional portable equipment etc., the chip resistor adopting the low-resistance value of current detecting more.Therefore, in order to this resistor size, resistance value is identical and can detect larger current value, requires that rated power increases.Therefore, due to this requirement, the spontaneous heating of this resistor increases.Further, produce the diaphragm of this resistor and the printed wiring board etc. installed after this resistor caused to the undesirable condition of damage.
Therefore, in patent documentation 1, ceramic substrate 1 utilizes direct thermal diffusion engagement resistor 2, the mechanical strength of reinforcing member.
In addition, Patent Document 2 discloses following content: joined to integratedly on ceramic substrate by resistor by the activate metal method employing silver solder etc.
In addition, in patent documentation 3, also propose to apply the method utilizing and to be attached to by resistor foil containing the inorganic adhesive of silicon dioxide on ceramic substrate.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2006-313763 publication;
Patent documentation 2: Japanese Unexamined Patent Publication 11-97203 publication;
Patent documentation 3: Japanese Unexamined Patent Publication 9-320802 publication.
Summary of the invention
The problem that invention will solve
But, in above-mentioned patent documentation 1, when resistance metallic plate or paper tinsel are joined on ceramic substrate, in the environment that high temperature 960 ~ 980 DEG C, below oxygen concentration 50ppm are such, utilize thermal diffusion to engage, for this, even if imagination is also large-scale problem as mass production facilities.Further, regulate cut off width to make the adjustment of resistance value in the allowed band of the width of resistor, it is difficult for resistance metallic plate and ceramic machinery ground easily being cut off.In addition, in the process of above-mentioned high temperature, the situation that the electrical characteristics that also there is resistance metallic plate worsen.
In addition, in patent documentation 2, when resistance metallic plate or paper tinsel being joined on ceramic substrate, application employs the activate metal method of silver solder etc.In this case, identically with patent document 1, the condition of concrete temperature etc. is not recorded yet, but, under being assumed to the temperature being exposed to about 800 DEG C.Thus, there is the problem identical with patent document 1.
Further, in patent documentation 3, utilizing with silicon dioxide is that the inorganic adhesive of main component is provided with resistor foil from the upper surface of substrate to side.Further, formation openings such as utilizing laser reconditioning is described to carry out the adjustment of resistance value.But, assuming that in this condition, if form opening in the adjustment of resistance value on resistor foil, then at this part generation current convergence, cause the reduction of the life characteristic of resistor.
Therefore, the present invention proposes to solve the problem, and its problem is to provide a kind of low-resistance chip resistor, can detect larger electric current and improve the mechanical strength of high electrical endurance, self independence.Herein, this chip resistor so-called has self independence above-mentioned and refers to utilize lift-launch machine to assemble this chip resistor and keep sufficient mechanical strength, and in addition, being meant to for big current of high electrical endurance is also fully general.Therefore, though be energized large electric current time, also can obtain having the substrate of the surface temperature reducing this resistor or resistive film and volume is become less and there is low-resistance chip resistor of the resistive layer structure of self independence.
In addition; as other problems of the present invention; structure after being used in substrate and resistive layer laminating is provided with end electrode or is provided with the structure of band shape of diaphragm as required; strengthen the electrical endurance of this resistor; so; the concentrated portion of the electric current caused by finishing trace is not set on resistive layer and replaces the cut-out width of the banded length direction of adjustment and cut off with the width preset according to resistance value; thereby, it is possible to manufacture high-precision resistor with easily and rapidly method.
For solving the means of problem
In order to solve above-mentioned problem, the invention provides a kind of low-resistance chip resistor, the main points of technical scheme 1 are, by following Structure composing: form resistive layer on the table back of the body two sides of substrate, diaphragm is formed at the central portion on this table back of the body two sides, the both sides configuration surface electrode of the described diaphragm on described resistive layer and backplate, and, at described substrate, the two ends of resistive film and surface back side electrode are formed with end electrode, described substrate is insulating resin or the rubber system of the ceramic powder in inner dispersion, and, described resistive layer is made to be any one of metallic plate or metal forming.
Herein, as metallic plate or the metal forming of above-mentioned resistive layer, there are manganin manganin alloy (manganin) or nichrome (nichrome), iron, chromium, the monomer of aluminium or these alloy.Wherein, metallic plate is more than 0.1mm, and metal forming is less than 0.1mm.According to desired resistance value, according to the kind by low resistive metal plate, specially appointed volume resistivity and its thickness set for this.Therefore, various plates and paper tinsel is considered according to the thickness of resistive film like this.In addition, as the insulating resin of ceramic powder in inner dispersion or the rubber of substrate, except propylene resin, from epoxylite, chloroprene rubber, butyl rubber, polyurethane rubber, nitrile butadiene (nitrile butadiene) class rubber, ethylene-butylene class rubber, polyester resin, polyvinyl chloride resin, polyurethane resin, silicones, phenolic resin, amide-type resin, acid imide resin, cellulosic resin, select more than one ABS resin.Further, above-mentioned resistive layer uses monomer or these the alloy of manganin manganin alloy, nichrome, iron, chromium, aluminium.And; as the raw material of diaphragm; consider epoxy resin, polyimide resin, silicones etc.; surface electrode by resistive layer under utilize such as galvanoplastic to be formed with copper, nickel, tin plated film successively Structure composing, the copper that end electrode utilizes galvanoplastic to obtain by the film at the nichrome film such as utilizing sputtering method to obtain or electroconductive resin cream from lower, nickel, tin plated film are formed.
In the technical scheme 3 of the manufacture method of the low-resistance chip resistor as the invention described above, the insulating resin of the band shape of ceramic powder or the table back of the body two sides of rubber substrate in inner dispersion, the stacked resistive layer be made up of metallic plate or metal forming, diaphragm is formed at the long dimensional directions central portion on the table back of the body two sides of this stacked band shape, the described resistive layer of the both sides of this diaphragm forms surface electrode and backplate, and, at described substrate, after the two ends formation end electrode of resistive film and surface back side electrode, with the long dimensional directions across of described band shape be cut to preset width and obtain.
This invention is the manufacture method of low-resistance chip resistor of technical scheme 1, it is characterized in that applying following method: the table back of the body two sides at belt base plate is formed resistive layer and diaphragm and define the structure of the band shape of surface back side electrode and end electrode and long dimensional directions across in their both sides is cut to the length (preset width) designed in advance.
As the technical scheme 4 of additive method of the present invention; it is characterized in that; on the insulating resin or rubber substrate of the described band shape of described technical scheme 3, the method for stacked described resistive layer is heated and paste on the substrate by the resistive layer of any one of described metallic plate or metal forming; further, the rolling carrying out pressurizeing in the mode larger than the central portion residing for the diaphragm formed in rear operation is utilized to come the long dimensional directions both ends of stacked described stacked band shape.
In the invention, in the mode larger than central portion to stacked long dimensional directions both ends pressurization, thus, integration is carried out in the internal direction of the both end sides of duplexer.
As the technical scheme 5 of additive method of the present invention; on the insulating resin or rubber substrate of the described band shape of described technical scheme 3, the method for stacked described resistive layer is heated and paste on the substrate by the resistive layer of any one of described metallic plate or metal forming; further, the rolling carrying out pressurizeing in the mode larger than its both ends is utilized to carry out stacked the central portion of the long dimensional directions residing for the diaphragm formed in rear operation of described stacked band shape.
In the invention, pressurize with the central portion of the mode larger than both ends to stacked long dimensional directions, compared with the central portion of duplexer, make both end sides integration fully.
In addition, as technical scheme 2 of the present invention, by following Structure composing: form substrate at the central portion on the table back of the body two sides of resistive layer, configuration surface electrode and backplate on the described resistive layer of the both sides of described substrate, further, form end electrode in the both sides of described resistive layer and substrate, described substrate is insulating resin or the rubber system of the ceramic powder in inner dispersion, further, described resistive layer is made to be any one of metallic plate or metal forming.
In the invention of above-mentioned technical scheme 2, make the substrate of technical scheme 1 contrary with resistive layer, and this substrate also has the function of diaphragm, compared with technical scheme 1, make to simplify the structure.
As the manufacture method of the low-resistance shape of the present invention of technique scheme 2, it is characterized in that, at the long dimensional directions central portion on the table back of the body two sides of the ribbon resistance layer of any one of metallic plate or metal forming, described resistive layer is heated, insulating resin or the rubber substrate of ceramic powder are sticked in inner dispersion, the described resistive layer of the both sides of described substrate forms surface electrode and backplate, and, after the two ends of described resistive layer and substrate form end electrode, with the long dimensional directions across of described band shape be cut to preset width and obtain.
This technical scheme 6 is manufacture methods of the resistor of low-resistance chip shape of described technical scheme 2.
The invention is characterized in, larger electric current can be detected, improve higher electrical endurance and the mechanical strength of self independence, and, make the surface temperature on the diaphragm of low-resistance chip resistor or substrate reduce when current electrifying.In order to play this effect, substrate of the present invention has applied in inner dispersion the insulating resin of ceramic powder or the insulating resin of rubber.Further, the current convergence between the trim slots being present in existing resistive layer of the reason that the electrical endurance that avoiding becomes the low-resistance chip resistor making to apply this insulating resin reduces, can with rapidly and the method for being easy to manufacture.
Accompanying drawing explanation
Fig. 1 (a) and (b) are summary stereogram and the drawing in side sectional elevation thereof of the part band shape manufacturing low-resistance chip resistor of the present invention.
Fig. 2 (a) and (b) manufacture as the summary stereogram of the part band shape of low-resistance chip resistor of the embodiment different from Fig. 1 and drawing in side sectional elevation.
Fig. 3 (a)-1 ~ 4 and (b)-1 ~ 4 is key diagrams of the manufacturing sequence of the low-resistance chip resistor representing Fig. 1.
Fig. 4 (a)-1 ~ 4 and (b)-1 ~ 4 is the key diagrams representing the manufacturing sequence different from Fig. 3.
Fig. 5 (a)-1 ~ 4 and (b)-1 ~ 4 is the key diagrams of the manufacturing sequence representing the low-resistance chip resistor different from Fig. 3 or Fig. 4.
Fig. 6 (a)-1 ~ 3 and (b)-1 ~ 4 is key diagrams of the manufacturing sequence of the low-resistance chip resistor representing Fig. 2.
Fig. 7 is the chart that the surface temperature of the resistor of insulated substrate by employing insulated substrate of the present invention and existing product compares.
Description of reference numerals:
1 insulated substrate
2 resistive layers
3 diaphragms
4-1 surface electrode
4-2 end electrode
4-3 backplate.
Embodiment
Using low-resistance structure of the little shape that will low-resistance chip resistor made to be minimal thickness as prerequisite, make it have self independence and improve mechanical strength, thus, seeking the raising of durability.
In addition; in the methods of the invention, will banded substrate and resistive layer laminating be made also to be provided with the structure of diaphragm, surface back side electrode and end electrode thereon or to cut off to manufacture with preset width on resistive layer and substrate, with being provided with the structure of surface back side electrode and end electrode and the long dimensional directions across of this band shape.
Embodiment 1
Below, the structure as low-resistance chip resistor of the present invention is described.
Fig. 1 (a) and (b) are in epoxylite, disperseed the bar of the insulated substrate of a kind of alumina powder as ceramic powder using volume ratio 7 to 3 stereogram and drawing in side sectional elevation thereof.In these figures, the sheet-metal layers of the Aludirome of the resistive layer 2 of the length of several about m of the band shape as thickness 0.05mm, width 6.3mm is stacked in thickness 0.3mm, width 4.3mm band shape several about m substrate 1 table the back of the body two sides.Central minister's dimensional directions of the both sides up and down of this resistive film utilize silk screen print method form the diaphragm 3 of the epoxy resin of thickness about 10 μm; on the resistive layer 2 of the both sides of upper and lower diaphragm 3, to overlap respectively surperficial backplate 4-1,4-3 via the end electrode 4-2 arranged in the end of substrate 1 and resistive layer 2.
Further, for the bar of above-mentioned each stratiform, cut off by each 3.2mm shown in Fig. 1 (a), complete low-resistance chip resistor of the present invention.
And; as shown in the chart of Fig. 7; following situation is shown: the temperature on the diaphragm surface of the resistor that energising produces when being equivalent to the electric current of each power of 0.5W, 1W, 1.5W, 2W in low-resistance chip resistor of the present invention, ceramic powder is distributed to inner insulating resin or rubber insulating resin substrate situation (A) and there are differences in the situation (B) at the insulating resin of the non-dispersed ceramic powder in inside or the insulating resin substrate of rubber of existing product.Be judged as according to this result, the surface temperature of diaphragm when being equivalent to the electric current of described each power about being energized, compared with existing ceramic substrate, the structure being mixed into the ceramic powder be distributed in substrate of the present invention has the effect of heat-resisting releasing.
In addition, the manufacture method of low-resistance chip resistor of the present invention is below recorded.
(embodiment 1-1)
1 ~ 4 of Fig. 3 (a) and (b) is partial perspective view and the drawing in side sectional elevation thereof of the manufacturing sequence of low-resistance chip resistor of the Fig. 1 represented as above-described embodiment 1.
Figure (a)-1, b ()-1 is the insulation board 1 that dispersion is mixed with alumina powder in epoxylite, at figure (a)-2, in (b)-2, the Aludirome metallic plate of resistive layer is sticked at its surface back side, after heating with 150 DEG C ~ 200 DEG C, in the scope pressurization rolling of 2hPa ~ 3hPa, at (a)-3, in (b)-3, and then at the above-mentioned epoxy resin of upper and lower central portion silk screen printing, toast with the temperature of 150 DEG C ~ 250 DEG C, at (a)-4, in (b)-4, toast after successively both ends being immersed in the solution of chromium nickel, finally, as shown in (a)-4, with long dimensional directions across carry out severing by the width determined by predetermined resistance such as every 3.0mm ~ 3.3mm and complete.
(embodiment 1-2)
Embodiment shown in Fig. 4 is the variation of described (embodiment 1-1).
The difference of this embodiment and (embodiment 1-1) is, when insulated substrate 1 carries out heating rolling to resistive film 2, makes both ends stronger than the central portion of Width, and namely central portion carries out pressurization rolling with 1.5hPa and pressurization rolling is carried out with 3hPa in both sides.
(embodiment 1-3)
Embodiment shown in Fig. 5 represents the variation different from described (embodiment 1-1) or (embodiment 1-2).
This embodiment is with the difference of (embodiment 1-1) or (embodiment 1-2), when insulated substrate carries out heating rolling to resistive layer 2, with above-mentioned (embodiment 1-2) on the contrary, with 1.5hPa, pressurization rolling is carried out to the both ends of Width, with 3hPa, pressurization rolling is carried out to central portion.
Embodiment 2
Fig. 2 (a) and (b) are the resistors different from above-described embodiment, in the figure, at the stacked insulated substrate 1 having disperseed ceramic powder in the epoxy of the central portion up and down of the metallic plate of the Aludirome of the size of several about the m as the thickness 0.1mm of resistive layer 2, the band shape of width 6.3mm.
Further, in the both sides up and down of upper and lower base plate via be positioned at resistive layer 2 both ends end electrode 4-2 and there is surface and each electrode at the back side up and down.
(embodiment 2-1)
Embodiment shown in Fig. 6 is the manufacture method of above-described embodiment 2.
At the surface back side central portion of the resistive layer 2 of Aludirome metallic plate, to the insulated substrate 1 being mixed with alumina powder with volume ratio 7:3 dispersion in epoxylite with 150 DEG C ~ 200 DEG C heat, rolling, stacked, the surface electrode of silk screen printing up and down of the resistive layer in the both sides of this substrate and backplate 4-1 and 4-3, after heating with 150 DEG C ~ 250 DEG C, successively rectangular both ends to be immersed in the solution of chromium nickel and to toast, last if (b)-4 is shown in figure, carry out severing with the width of 3.0mm ~ 3.3mm and complete.
utilizability in industry
Utilize as low-resistance chip resistor.
Claims (5)
1. a low-resistance chip resistor, is characterized in that,
By following Structure composing: form resistive layer on the table back of the body two sides of substrate; diaphragm is formed at the central portion on this table back of the body two sides; the both sides configuration surface electrode of the described diaphragm on described resistive layer and backplate; and; end electrode is formed at the two ends of described substrate, resistive film and surface back side electrode
Described substrate is insulating resin or the rubber system of the ceramic powder in inner dispersion, makes described resistive layer be any one of metallic plate or metal forming,
At the table back of the body stacked resistive layer in two sides of described substrate the sandwich that formed by the substrate stacked for described resistive layer and heat, rolling and obtaining.
2. a low-resistance chip resistor, is characterized in that,
By following Structure composing: form substrate, configuration surface electrode and backplate on the described resistive layer of the both sides of described substrate at the central portion on the table back of the body two sides of resistive layer, and, be formed with end electrode at the two ends of described resistive layer and surface back side electrode,
Described substrate is insulating resin or the rubber system of the ceramic powder in inner dispersion, makes described resistive layer be any one of metallic plate or metal forming,
Central portion multilayer board on the table back of the body two sides of described resistive layer and the sandwich that formed described substrate layer to be stacked on described resistive layer and heat, rolling and obtaining.
3. low-resistance chip resistor according to claim 1 and 2, is characterized in that,
Described heating is implemented at 150 DEG C ~ 200 DEG C.
4. a manufacture method for low-resistance chip resistor, is characterized in that,
At the long dimensional directions central portion on the table back of the body two sides of the ribbon resistance layer of any one of metallic plate or metal forming, described resistive layer is heated, be fitted in the insulating resin of inner dispersion ceramic powder or rubber substrate and be rolled, the described resistive layer of the both sides of described substrate forms surface electrode and backplate, and, after the two ends of described resistive layer and substrate form end electrode, with the long dimensional directions across of described band shape be cut to preset width and obtain.
5. the manufacture method of low-resistance chip resistor according to claim 4, is characterized in that,
Described heating is implemented at 150 DEG C ~ 200 DEG C.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200980160900.XA CN102473494B (en) | 2009-08-11 | 2009-08-11 | Low-resistance chip resistor and manufacture method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980160900.XA Division CN102473494B (en) | 2009-08-11 | 2009-08-11 | Low-resistance chip resistor and manufacture method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104952569A true CN104952569A (en) | 2015-09-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510171371.0A Pending CN104952569A (en) | 2009-08-11 | 2009-08-11 | Sheet-type resistor with low resistance and manufacture method of sheet-type resistor |
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| CN (1) | CN104952569A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107112099A (en) * | 2015-12-22 | 2017-08-29 | 松下知识产权经营株式会社 | Resistor |
| CN110349722A (en) * | 2019-07-12 | 2019-10-18 | 南京萨特科技发展有限公司 | A kind of heat treatment method of alloy fled rheostat |
| CN110459373A (en) * | 2019-08-19 | 2019-11-15 | 南京隆特电子有限公司 | A kind of low-resistance resistor and manufacturing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107112099A (en) * | 2015-12-22 | 2017-08-29 | 松下知识产权经营株式会社 | Resistor |
| CN107112099B (en) * | 2015-12-22 | 2021-04-02 | 松下知识产权经营株式会社 | Resistor with a resistor element |
| CN110349722A (en) * | 2019-07-12 | 2019-10-18 | 南京萨特科技发展有限公司 | A kind of heat treatment method of alloy fled rheostat |
| CN110349722B (en) * | 2019-07-12 | 2021-04-30 | 南京萨特科技发展有限公司 | Heat treatment method of alloy resistor |
| CN110459373A (en) * | 2019-08-19 | 2019-11-15 | 南京隆特电子有限公司 | A kind of low-resistance resistor and manufacturing method |
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