CN104934388A - Aluminum silicon carbide composite radiating structure - Google Patents
Aluminum silicon carbide composite radiating structure Download PDFInfo
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- CN104934388A CN104934388A CN201510353740.8A CN201510353740A CN104934388A CN 104934388 A CN104934388 A CN 104934388A CN 201510353740 A CN201510353740 A CN 201510353740A CN 104934388 A CN104934388 A CN 104934388A
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- silicon carbide
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Abstract
The invention provides an aluminum silicon carbide composite radiating structure. The aluminum silicon carbide composite radiating structure comprises a porous silicon carbide ceramic sheet and metal aluminum, wherein one surface of the porous silicon carbide ceramic sheet is in contact with a heat source; at one side of the surface of the contacted heat source, pores of the porous silicon carbide ceramic sheet are filled with the metal aluminum; at one side far from the surface of the contacted heat source, the pores of the porous silicon carbide ceramic sheet are filled with metal aluminum; and the thickness of the part, filled with the metal aluminum, of the porous silicon carbide ceramic sheet is 1/5-1/3 the thickness of the whole porous silicon carbide ceramic sheet. The aluminum silicon carbide composite radiating structure has excellent radiating comprehensive performance.
Description
Technical field
The present invention relates to a kind of aluminum silicon carbide composite material, especially a kind of aluminium silicon carbide composite radiating structure.
Background technology
In electronics and microelectronics Packaging field, as thyristor, rectifying tube encapsulation; Power electronic device, automotive electronics power module package field; The fields such as high-power liquid crystal display device, high performance PCB plate, microprocessor chip, hard disc of computer all can run into the problem of heat radiation, because the accumulation of heat can cause the damage of device.Nowadays thermal management capabilities more and more becomes the core technical competency of enterprise.
And along with the more high performance requirement of power device, propose renewal, higher requirement to encapsulating material, traditional material is no longer applicable to the encapsulation of high power density device.The metal material of the high heat conductance such as the aluminium that the past uses in a large number can not reach good heat radiation index and light requirement, and cost is higher, can not meet the needs of this high power density.This makes electronic device heat management problems become bottleneck.Electronic device heat management problems can not get good solution, can cause the thermal failure of electronic device, thus causes packaging body and power device to ftracture because of expanded by heating, and power device thermal diffusivity is not good and quit work.Meanwhile, because the thermal coefficient of expansion of the materials such as existing metal does not mate with power device, structural instability is made.
Carbofrax material has the thermal conductivity close to metallic aluminum material, and the heat convection energy force rate metallic aluminum material of itself and air is excellent, is usually used as the heat-radiating substrate of power device and heat sink.And light, low price, having the thermal coefficient of expansion matched with power device, is the material that thermal source management domain is conventional.But simple carbofrax material also exists the shortcoming of thermal conductivity not as good as metallic aluminum material, needs the combination property of further heat radiation.
Summary of the invention
In order to solve the deficiency of above-mentioned comprehensive heat dispersion, the advantage of comprehensive utilization metallic aluminum material and carbofrax material, the invention provides a kind of aluminium silicon carbide composite radiating structure.
Aluminium silicon carbide composite radiating structure of the present invention, comprises silicon carbide ceramics sheet and metallic aluminium, and specifically described silicon carbide ceramics sheet is porous silicon carbide ceramic sheet, and described metallic aluminium is filled in the hole of described porous silicon carbide ceramic sheet.
Further, described aluminium silicon carbide composite radiating structure, the porosity of described porous silicon carbide ceramic sheet is 20-30%.
Further, described aluminium silicon carbide composite radiating structure, a surface contact thermal source of described porous silicon carbide ceramic sheet.
Further, a surface contact thermal source of described porous silicon carbide ceramic sheet, and in the surperficial side of described contact thermal source, the hole of described porous silicon carbide ceramic sheet is filled by metallic aluminium; Away from the surperficial side of described contact thermal source, described in the Kong Wei of described porous silicon carbide ceramic sheet is filled by metallic aluminium; The thickness of the porous silicon carbide ceramic sheet part of being filled by metallic aluminium is the 1/5-1/3 of whole porous silicon carbide ceramic sheet thickness.
Further, described aluminium silicon carbide composite radiating structure, the porosity of described porous silicon carbide ceramic sheet is 25%.
Further, described thermal source is euthermic chip.
Accompanying drawing explanation
Fig. 1 a kind of aluminium silicon carbide composite construction schematic diagram of the present invention;
Fig. 2 radiation processes schematic diagram.
Fig. 3 another kind of aluminium silicon carbide composite construction schematic diagram of the present invention.
Embodiment
See Fig. 1, aluminium silicon carbide of the present invention (AlSiC) composite construction comprises porous silicon carbide ceramic sheet 001, and the geometry of this potsherd 001 can design as required.The hole of this porous silicon carbide ceramic sheet is open hole, and namely hole communicates with outside air environment, and voidage controls between 20-30%, and namely the volume of unit volume endoporus accounts for 20-30%.The side, surface 002 contacted with heat source H, the hole of this porous silicon carbide ceramic sheet is filled by metallic aluminium 003.The thickness d 1 of the porous silicon carbide ceramic sheet part of being filled by metallic aluminium 003 is the 1/5-1/3 of whole porous silicon carbide ceramic sheet thickness d 2.
Heat source H be sticked or Contact 002 on the surface, the density of heat flow rate that heat source H produces entered each surface that metallic aluminium and carborundum are delivered to rapidly carborundum, these surfaces comprise surface and the outer surface in hole, on these surfaces, heat and air ambient carry out heat convection, reject heat in surrounding environment.
Conduction process and Convective Heat Transfer can be divided into see Fig. 2 said process, because the heat conductivility of metallic aluminium is higher than carbofrax material, play a part rapidly heat partition to be conducted at the aluminium of near heating sources and carborundum, thermal conductivity is topmost parameter in this process, hole can hinder the conduction of flow on the contrary in this process, therefore the surface portion contacted with thermal source at carborundum fin uses the metallic aluminium filler opening of high heat conductance to be conducive to the rapid conduction of heat, the mode filling aluminum of simultaneously filling for body employing with how empty silicon carbide ceramics can make technique simple.When heat is rapidly by conduction dispersion, at this moment heat convection becomes topmost process, and the surface of the more and air ambient heat exchange of this process entails, therefore the silicon carbide ceramics of porous can be conducive to heat loss through convection to greatest extent.
In sum, the present embodiment has excellent heat radiation combination property, be the combination by metallic aluminium and porous silicon carbide ceramic, and optimizing structure design obtains.
The invention provides another embodiment.
As shown in Figure 3, there is the porous silicon carbide main body 100 of flat upper surfaces S1 and lower surface S2, its porosity is 25%, the cross section of this main body is circular, the upper surface S1 of this main body 100 is formed the pit 102 that some degree of depth are d3, Fig. 3 only schematically shows a pit, and some euthermic chips 101 are arranged in this pit 102, and the degree of depth d3 of described pit is identical with the thickness of this euthermic chip 101.The hole of porous silicon carbide main body 100 part within distance upper surface S1 certain thickness d4 is filled up by metallic aluminium.This certain thickness d4 is greater than the degree of depth d3 of twice pit, and preferably this certain thickness d4 is 10 millimeters.Cover insulating barrier (accompanying drawing does not mark) at upper surface S1 except the part of pit, form the line layer (accompanying drawing does not mark) be electrically connected with euthermic chip 101 on the insulating layer.
Claims (6)
1. an aluminium silicon carbide composite radiating structure, comprises silicon carbide ceramics sheet and metallic aluminium, it is characterized in that: described silicon carbide ceramics sheet is porous silicon carbide ceramic sheet, and described metallic aluminium is filled in the hole of described porous silicon carbide ceramic sheet.
2. aluminium silicon carbide composite radiating structure as claimed in claim 1, is characterized in that: the porosity of described porous silicon carbide ceramic sheet is 20-30%.
3. aluminium silicon carbide composite radiating structure as claimed in claim 1, is characterized in that: a surface contact thermal source of described porous silicon carbide ceramic sheet.
4. aluminium silicon carbide composite radiating structure as claimed in claim 1, it is characterized in that: a surface contact thermal source of described porous silicon carbide ceramic sheet, and in the surperficial side of described contact thermal source, the hole of described porous silicon carbide ceramic sheet is filled by metallic aluminium; Away from the surperficial side of described contact thermal source, described in the Kong Wei of described porous silicon carbide ceramic sheet is filled by metallic aluminium; The thickness of the porous silicon carbide ceramic sheet part of being filled by metallic aluminium is the 1/5-1/3 of whole porous silicon carbide ceramic sheet thickness.
5. aluminium silicon carbide composite radiating structure as claimed in claim 4, is characterized in that: the porosity of described porous silicon carbide ceramic sheet is 25%.
6. the aluminium silicon carbide composite radiating structure as described in any one of claim 4 or 5, is characterized in that: described thermal source is euthermic chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510353740.8A CN104934388A (en) | 2015-06-25 | 2015-06-25 | Aluminum silicon carbide composite radiating structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510353740.8A CN104934388A (en) | 2015-06-25 | 2015-06-25 | Aluminum silicon carbide composite radiating structure |
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| CN104934388A true CN104934388A (en) | 2015-09-23 |
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| CN201510353740.8A Pending CN104934388A (en) | 2015-06-25 | 2015-06-25 | Aluminum silicon carbide composite radiating structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109427692A (en) * | 2017-08-23 | 2019-03-05 | Tcl集团股份有限公司 | Packaging film and its application |
| CN112831292A (en) * | 2021-01-20 | 2021-05-25 | 上海载乘新材料科技有限公司 | Heat dissipation adhesive tape |
| CN112877007A (en) * | 2021-01-20 | 2021-06-01 | 上海载乘新材料科技有限公司 | Heat dissipation diaphragm |
| CN112918039A (en) * | 2021-01-21 | 2021-06-08 | 西安工业大学 | Composite structure of metal composite material and forming method thereof |
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| CN201733561U (en) * | 2010-07-05 | 2011-02-02 | 兆阳材料科技有限公司 | Ceramic substrate with metal coating |
| CN202888245U (en) * | 2012-10-22 | 2013-04-17 | 厦门乾球光电科技有限公司 | High-power LED (Light Emitting Diode) heat sink |
| CN203013703U (en) * | 2012-12-17 | 2013-06-19 | 中怡(苏州)科技有限公司 | Heat radiation element and communication apparatus using same |
| US20140037934A1 (en) * | 2011-07-15 | 2014-02-06 | Kaoru Ishido | Composite material for heat dissipating plate and method of production of same |
| CN204696101U (en) * | 2015-06-25 | 2015-10-07 | 刘淮祥 | A kind of aluminium silicon carbide composite radiating structure |
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2015
- 2015-06-25 CN CN201510353740.8A patent/CN104934388A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201733561U (en) * | 2010-07-05 | 2011-02-02 | 兆阳材料科技有限公司 | Ceramic substrate with metal coating |
| US20140037934A1 (en) * | 2011-07-15 | 2014-02-06 | Kaoru Ishido | Composite material for heat dissipating plate and method of production of same |
| CN202888245U (en) * | 2012-10-22 | 2013-04-17 | 厦门乾球光电科技有限公司 | High-power LED (Light Emitting Diode) heat sink |
| CN203013703U (en) * | 2012-12-17 | 2013-06-19 | 中怡(苏州)科技有限公司 | Heat radiation element and communication apparatus using same |
| CN204696101U (en) * | 2015-06-25 | 2015-10-07 | 刘淮祥 | A kind of aluminium silicon carbide composite radiating structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109427692A (en) * | 2017-08-23 | 2019-03-05 | Tcl集团股份有限公司 | Packaging film and its application |
| CN112831292A (en) * | 2021-01-20 | 2021-05-25 | 上海载乘新材料科技有限公司 | Heat dissipation adhesive tape |
| CN112877007A (en) * | 2021-01-20 | 2021-06-01 | 上海载乘新材料科技有限公司 | Heat dissipation diaphragm |
| CN112918039A (en) * | 2021-01-21 | 2021-06-08 | 西安工业大学 | Composite structure of metal composite material and forming method thereof |
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Application publication date: 20150923 |
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