CN102446878A - Semiconductor refrigerating device - Google Patents
Semiconductor refrigerating device Download PDFInfo
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- CN102446878A CN102446878A CN2010105044154A CN201010504415A CN102446878A CN 102446878 A CN102446878 A CN 102446878A CN 2010105044154 A CN2010105044154 A CN 2010105044154A CN 201010504415 A CN201010504415 A CN 201010504415A CN 102446878 A CN102446878 A CN 102446878A
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- cooling device
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Abstract
The invention belongs to the field of refrigerating equipment, and discloses a semiconductor refrigerating device. The device comprises a plurality of n-type semiconductor chips and p-type semiconductor chips which are connected end to end in series through electrodes and arranged at intervals and in parallel on the same plane; two sides of a plane formed by the n-type semiconductor chips and the p-type semiconductor chips connected in series are respectively jointed through a cold end component and a hot end component; a heat insulation material is encapsulated in a peripheral clearance formed by the cold end component, the hot end component, the n-type semiconductor chips and the p-type semiconductor chips; and a heat conducting insulation layer is respectively arranged on the jointed contact faces of the hot end component, the hot end component, the n-type semiconductor chips and the p-type semiconductor chips. By using the semiconductor material with thermoelectric energy conversion property, the device has refrigerating function during electrifying, actively and quickly absorbs a large amount of heat generated when a heating electronic component works, and provides an efficient heat dissipation channel between the heating electronic component and radiating fins.
Description
Technical field
The present invention relates to a kind of refrigerating plant, relate in particular to a kind of semiconductor cooling device that is applicable to the heat-generating electronic elements that cooling such as IC chip, power type light-emitting diode (LED) etc. are so well.
Background technology
IC chip, LED (light-emitting diode) etc. are the higher electronic devices and components of caloric value, and heat is concentrated, and is improper like radiating treatment, then might cause these electronic devices and components cisco unity malfunctions, or even burn.
Cooling measure to these electronic devices and components mainly is to adopt fin at present, or the mode of fin+fan, adopts the fin mode that many shortcomings are arranged merely, the one, need large tracts of land, large space, and the 2nd, heat refluxes; Much be used for the machine components of drive fan for adding the mode that fan comes auxiliary heat dissipation, comprising, any one in these parts breaks down all might cause the irregular working of fan, and this obviously can cause inappropriate cooling; In addition, have steam and dust in the air that fan is sent into, and these steam and dust can cover on the cooling system and the component capabilities of cooling system is reduced and damage these parts.A kind of in addition existing cooling system is that to utilize water or other liquid-cooling systems be the heat pipe heat dissipation technology; The shortcoming of this heat pipe heat radiation technology is, compares with common fin, and the thermal resistance of heat radiation has obtained minimizing; But because the volume of heat pipe is big; The design of heat radiation slide glass will receive the restriction of heat pipe shape, and the heat of heating electronic component is that radiating efficiency is not thoroughly improved through the passive conduction of heat pipe convection type; In addition,, cause the cost of heat pipe also higher, influenced actual application because the processing technology of heat pipe inner capillary tube is had relatively high expectations.
So in order initiatively heating electronic component to be carried out cooling heat dissipation, people have expected semiconductor refrigerating technology.Chinese patent specification CN 101019218A and CN 1873973A disclose the mode of utilizing the semiconductor cooling technology that little process chip and LED are dispelled the heat respectively.Compare with passive heat dissipation technologys such as traditional fin, heat pipes, utilize semi-conducting material, when energising, just have refrigerating function with thermoelectric energy transfer characteristic; The a large amount of heats that produce when initiatively absorbing electronic devices and components work rapidly between heating electronic component and the heat radiation slide glass heat dissipation channel efficiently being provided, have replaced tradition and have utilized heat conducting radiating mode; Volume is little; Movement-less part, noiselessness, the technical heat radiation bottleneck of comprehensively having untied heating electronic component.Yet existing semiconductor chilling plate mainly adopts two Al
2O
3Potsherd is clamped the so-called sandwich structure of p N-type semiconductor N and n N-type semiconductor N, because Al
2O
3The conductive coefficient of pottery is not high, is generally 20～30W/mK, far away from the conductive coefficient of some metal, can reach 360W/mK such as copper, is Al
2O
3Nearly 18 times of pottery, so, Al adopted
2O
3The semiconductor chilling plate of pottery can not very fast conduct heat, beyond doubt its refrigeration had a greatly reduced quality, and is unfavorable for dispelling the heat.
Summary of the invention
In order to solve above-mentioned Al
2O
3The problem of pottery cooling piece aspect Refrigeration Technique; The present invention adopts the conducting-heat elements of metal as semiconductor cooling device; Utilize the higher conductive coefficient of metal to absorb the heat that heating electronic component when work produce quickly and distribute faster, a kind of simple in structure, semiconductor cooling device that radiating effect is good is provided.
This semiconductor cooling device must realize that technical scheme is following:
A kind of semiconductor cooling device comprises that several are connected in series through electrode from beginning to end and the spaced and parallel arrangement is arranged at n N-type semiconductor N sheet and the p N-type semiconductor N sheet on the same plane; The said n N-type semiconductor N sheet that is connected in series each other and the both sides on p N-type semiconductor N plane that sheet forms are fitted and connected through cold end parts and hot junction portion parts respectively; Be packaged with the insulation and thermal insulation material in said cold end parts, hot junction portion parts, n N-type semiconductor N sheet and the formed peripheral clearance of p N-type semiconductor N sheet; It is characterized in that, on said cold end parts and hot junction portion parts and n N-type semiconductor N sheet and p N-type semiconductor N sheet applying contact-making surface, be respectively equipped with a heat conductive insulating layer.
Said semiconductor cooling device, the material of said heat conductive insulating layer are AlN, Si, SiC, B
4C, BN or Al
2O
3In at least a.
Said semiconductor cooling device, wherein, the thickness of said heat conductive insulating layer is 0.5 μ m～50 μ m.
Said semiconductor cooling device, wherein, the material of said hot junction portion's parts and cold end parts is a metal material; Be copper material, aluminium material or aluminum alloy material.
Said semiconductor cooling device; Wherein, The profile of said hot junction portion's parts and cold end parts is configured to the thin plate of smooth, and the profile structure of this thin plate is suitable with several said n N-type semiconductor N sheets that are connected in series each other and the formed planar profile structure of p N-type semiconductor N sheet.
Said semiconductor cooling device, wherein, said semiconductor cooling device also comprises fin, this fin is connected with said hot junction portion parts through heat conductive silica gel.
Said semiconductor cooling device, wherein, the surface of the said dorsad hot junction of said fin portion parts is provided with some regularly arranged fins.
Said semiconductor cooling device, wherein, the surface of the said dorsad cold end parts of said hot junction portion's parts is provided with some regularly arranged fins.
As preferably, said semiconductor cooling device, wherein, said fin can be directly as said hot junction portion parts.
Said semiconductor cooling device, wherein, said electrode is copper material or aluminium material.
The present invention has the following advantages:
The present invention and tradition are compared passive radiating modes such as the fan of heating electronic component heat radiation, fin, heat pipes; Utilization has the semi-conducting material of thermoelectric energy transfer characteristic; When energising, just has refrigerating function; And by cold end parts and hot junction portion parts with and on the heat conductive insulating layer; The a large amount of heats that produce when initiatively absorbing heating electronic component work rapidly are for providing a heat dissipation channel efficiently between heating electronic component and the fin; The cold end parts of this semiconductor cooling device and hot junction portion parts all adopt metal material or other high heat-conductings; So therefore radiating effect is better; And noiselessness, nothing machinery parts, volume are littler; Use more convenient; Thereby make that the operating efficiency of electronic devices and components is higher, longer service life.
Description of drawings
Fig. 1 is the sectional view of semiconductor cooling device structure in the present embodiment 1;
Fig. 2 is the sectional view of semiconductor cooling device structure in the present embodiment 2.
Embodiment
The technical scheme that the present invention adopts is following:
A kind of semiconductor cooling device comprises cold end parts and hot junction portion parts, electrode, several p N-type semiconductor N sheets and n N-type semiconductor N sheet, and the insulation and thermal insulation encapsulating material, and one of them surface of cold end parts and hot junction portion parts is provided with the heat conductive insulating layer; The order of building of this semiconductor cooling device is: several n N-type semiconductor N sheets and p N-type semiconductor N sheet be connected in series from beginning to end through electrode and spaced and parallel arrangement be arranged on the same plane, and in the both sides on n N-type semiconductor N sheet that is connected in series each other and the formed plane of p N-type semiconductor N sheet respectively be fitted and connected cold end parts and hot junction portion parts; Formed peripheral clearance is packaged with the insulation and thermal insulation material between cold end parts, hot junction portion parts, n N-type semiconductor N sheet and p N-type semiconductor N sheet; Wherein, electrode is that copper, aluminium or other have the metal material of good conductive heat conductivility.
The material of said cold end parts and hot junction portion parts is a metal, can be metallic copper, also can be metallic aluminium or aluminium alloy, also can be other metal materials with high thermal conductivity coefficient; And the profile of cold end parts and hot junction portion parts is configured to the thin plate of smooth, and the profile structure of this thin plate is suitable with several said n N-type semiconductor N sheets that are connected in series each other and the formed planar profile structure of p N-type semiconductor N sheet.
In order to improve radiating effect, a surface of hot junction portion parts is provided with some regularly arranged fins; Perhaps portion's parts one side increases by a fin in the hot junction, and fin is connected through heat conductive silica gel with hot junction portion parts, and this fin is provided with some regularly arranged fins in the surface of hot junction portion parts dorsad; These fins can increase area of dissipation, have improved the radiating effect of this semiconductor cooling device greatly.
The heat conductive insulating layer thickness that is arranged on cold end parts and hot junction portion parts surface is 0.5 μ m～50 μ m, and its material can be AlN, Si, SiC, B
4C, BN or Al
2O
3In at least a, also can be other high heat conductive insulating materials.
When building described semiconductor cooling device, on said cold end parts and hot junction portion parts, be coated with described one side and fit with p N-type semiconductor N sheet with n N-type semiconductor N sheet and contact with high heat conductive insulating material.
When building described semiconductor cooling device, must adopt formed peripheral clearance between insulation and thermal insulation material embedding p N-type semiconductor N and n N-type semiconductor N, cold end parts and hot junction portion parts, can protect inner components and parts like this.
Below in conjunction with accompanying drawing, further explain is done in preferred embodiment of the present invention.
Embodiment 1
As shown in Figure 1; Semiconductor cooling device adopts the cold end parts 11 and hot junction portion parts 12 with high thermal and bigger thermal capacity copper material; And be shaped as the smooth thin plate, and prepare layer thickness AlN heat conductive insulating layer 50 μ m, that have high thermal conductivity through technology such as magnetron sputtering, chemical vapour deposition (CVD)s on a surface of cold end parts 11 and hot junction portion parts 12; Several p N-type semiconductor Ns 14 are connected in series through electrode 15 head and the tail with n N-type semiconductor N 14, and p N-type semiconductor N 14 is parallel on the same plane with n N-type semiconductor N 14 each intervals; Cold end parts 11 and hot junction portion parts 12 are fitted and connected on p N-type semiconductor N 14 and n N-type semiconductor N 14; Because AlN has higher conductive coefficient, can reach 270W/mk, can heat be led away fast, shown in AlN heat conductive insulating layer 14 applyings contact with the n N-type semiconductor N with p N-type semiconductor N 14.In building the process of semiconductor chilling plate, need be at the adiabatic insulating barrier 16 of peripheral embedding one deck of p N-type semiconductor N 14 and n N-type semiconductor N 14, so that in making, transportation, use, protect inner components and parts.In actual use; Can portion's parts 12 sides add a fin 18 in the hot junction of semiconductor cooling device as required; With distributing of the heat of accelerating semiconductor cooling device hot junction portion parts 12, hot junction portion parts 12 have the heat conductive silica gel 17 of silver-colored particle to be connected with hot-end component 12 through ginseng; In the present embodiment, fin 18 adopts the aluminium block that has the fin afterbody.
In actual use, as shown in Figure 1, the both positive and negative polarity of electrode shown in pressing inserts external power source, behind the connection DC power supply, according to paltie effect, in a P type semiconductor element and the transfer that N semiconductor element junction will produce the temperature difference and heat.A superincumbent junction, the sense of current is N → P, temperature descends and heat absorption, Here it is cold junction.And a junction below, the sense of current is P → N, temperature rises and heat release, is the hot junction therefore.So, the electronic devices and components of needs coolings are fixed on the cold junction of semiconductor cooling device, change can be taken away the heat that these electronic devices and components produce.
Embodiment 2
As shown in Figure 2, the structure of semiconductor cooling device is similar with embodiment 1 in the present embodiment, and difference is that hot-end component 12 is made into the bulk that has the fin afterbody, simultaneously, has saved fin 18 and heat conductive silica gel 17; Compare with embodiment 1, saved fin 18, make heat distribute faster like this, reduced the use of heat-conducting silicone grease, promptly reduced the thermal resistance in the passage of heat, can better improve rate of heat dispation; Simultaneously, saved cost of manufacture again.
Should be understood that above-mentioned statement to preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with accompanying claims.
Claims (9)
1. a semiconductor cooling device comprises that several are connected in series through electrode from beginning to end and the spaced and parallel arrangement is arranged at n N-type semiconductor N sheet and the p N-type semiconductor N sheet on the same plane; The said n N-type semiconductor N sheet that is connected in series each other and the both sides on p N-type semiconductor N plane that sheet forms have been fitted and connected cold end parts and hot junction portion parts respectively; Periphery at said cold end parts, hot junction portion parts and n N-type semiconductor N sheet and p N-type semiconductor N sheet is packaged with the insulation and thermal insulation material, it is characterized in that, the material of said hot junction portion's parts and cold end parts is metal material; On said cold end parts and hot junction portion parts and n N-type semiconductor N sheet and p N-type semiconductor N sheet applying contact-making surface, be respectively equipped with a heat conductive insulating layer.
2. semiconductor cooling device according to claim 1 is characterized in that, the material of said heat conductive insulating layer is AlN, Si, SiC, B
4C, BN or Al
2O
3In at least a.
3. semiconductor cooling device according to claim 2 is characterized in that, the thickness of said heat conductive insulating layer is 0.5 μ m～50 μ m.
4. semiconductor cooling device according to claim 1 is characterized in that, the material of said electrode is copper or aluminium.
5. semiconductor cooling device according to claim 1 is characterized in that, said metal material is copper material, aluminium material or aluminum alloy material.
6. according to claim 1 or 5 described semiconductor cooling devices; It is characterized in that; The profile of said hot junction portion's parts and cold end parts is configured to the thin plate of smooth, and the profile structure of this thin plate is suitable with the profile structure on several said n N-type semiconductor N sheets that are connected in series each other and p N-type semiconductor N plane that sheet forms.
7. semiconductor cooling device according to claim 1 is characterized in that said semiconductor cooling device also comprises fin, and this fin is connected with said hot junction portion parts through heat conductive silica gel.
8. semiconductor cooling device according to claim 7 is characterized in that, the surface of the said dorsad hot junction of said fin portion parts is provided with some regularly arranged fins.
9. semiconductor cooling device according to claim 1 is characterized in that, the surface of the said dorsad cold end parts of said hot junction portion's parts is provided with some regularly arranged fins.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105044154A CN102446878A (en) | 2010-10-11 | 2010-10-11 | Semiconductor refrigerating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105044154A CN102446878A (en) | 2010-10-11 | 2010-10-11 | Semiconductor refrigerating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102446878A true CN102446878A (en) | 2012-05-09 |
Family
ID=46009246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105044154A Pending CN102446878A (en) | 2010-10-11 | 2010-10-11 | Semiconductor refrigerating device |
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| CN (1) | CN102446878A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105091400A (en) * | 2015-09-16 | 2015-11-25 | 广东富信科技股份有限公司 | Thermoelectric cooling integrated system |
| CN107968315A (en) * | 2017-12-14 | 2018-04-27 | 苏州矩阵光电有限公司 | A kind of semiconductor laser |
| WO2018157598A1 (en) * | 2017-02-28 | 2018-09-07 | 华为技术有限公司 | Chip package system |
| CN109268312A (en) * | 2018-11-30 | 2019-01-25 | 无锡市海星船舶动力有限公司 | Compressor impeller based on semiconductor refrigerating technology heat dissipation |
| CN111076103A (en) * | 2019-11-28 | 2020-04-28 | 中国科学院宁波材料技术与工程研究所 | Fluorescent module and laser lighting system |
| CN111407013A (en) * | 2019-01-05 | 2020-07-14 | 青岛海尔空调器有限总公司 | Air-conditioning clothes |
| CN113490397A (en) * | 2021-07-20 | 2021-10-08 | 长春捷翼汽车零部件有限公司 | Connector with semiconductor cooling device and automobile |
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| JPH0339525A (en) * | 1989-07-07 | 1991-02-20 | Fujita Corp | Unattended operation system for bulldozer |
| JPH0677366A (en) * | 1992-04-27 | 1994-03-18 | Nec Corp | Semiconductor device |
| JP2004266145A (en) * | 2003-03-03 | 2004-09-24 | Okano Electric Wire Co Ltd | Cooling device |
| JP2007234913A (en) * | 2006-03-01 | 2007-09-13 | Nec Computertechno Ltd | Electronic circuit structure, electronic equipment having it, method for generating thermo-electromotive force and auxiliary electric power, and semiconductor bare chip |
| JP2008198928A (en) * | 2007-02-15 | 2008-08-28 | Sony Corp | Cooling structure and electronic apparatus in which its structure is built-in |
| CN101437355A (en) * | 2007-11-12 | 2009-05-20 | 林玉雪 | Circuit substrate and manufacturing method thereof |
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2010
- 2010-10-11 CN CN2010105044154A patent/CN102446878A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0339525A (en) * | 1989-07-07 | 1991-02-20 | Fujita Corp | Unattended operation system for bulldozer |
| JPH0677366A (en) * | 1992-04-27 | 1994-03-18 | Nec Corp | Semiconductor device |
| JP2004266145A (en) * | 2003-03-03 | 2004-09-24 | Okano Electric Wire Co Ltd | Cooling device |
| JP2007234913A (en) * | 2006-03-01 | 2007-09-13 | Nec Computertechno Ltd | Electronic circuit structure, electronic equipment having it, method for generating thermo-electromotive force and auxiliary electric power, and semiconductor bare chip |
| JP2008198928A (en) * | 2007-02-15 | 2008-08-28 | Sony Corp | Cooling structure and electronic apparatus in which its structure is built-in |
| CN101437355A (en) * | 2007-11-12 | 2009-05-20 | 林玉雪 | Circuit substrate and manufacturing method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105091400A (en) * | 2015-09-16 | 2015-11-25 | 广东富信科技股份有限公司 | Thermoelectric cooling integrated system |
| WO2018157598A1 (en) * | 2017-02-28 | 2018-09-07 | 华为技术有限公司 | Chip package system |
| CN107968315A (en) * | 2017-12-14 | 2018-04-27 | 苏州矩阵光电有限公司 | A kind of semiconductor laser |
| CN109268312A (en) * | 2018-11-30 | 2019-01-25 | 无锡市海星船舶动力有限公司 | Compressor impeller based on semiconductor refrigerating technology heat dissipation |
| CN111407013A (en) * | 2019-01-05 | 2020-07-14 | 青岛海尔空调器有限总公司 | Air-conditioning clothes |
| CN111076103A (en) * | 2019-11-28 | 2020-04-28 | 中国科学院宁波材料技术与工程研究所 | Fluorescent module and laser lighting system |
| CN113490397A (en) * | 2021-07-20 | 2021-10-08 | 长春捷翼汽车零部件有限公司 | Connector with semiconductor cooling device and automobile |
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Application publication date: 20120509 |