CN104900694A - 横向扩散金属氧化物半导体器件及其制造方法 - Google Patents

横向扩散金属氧化物半导体器件及其制造方法 Download PDF

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CN104900694A
CN104900694A CN201410075277.0A CN201410075277A CN104900694A CN 104900694 A CN104900694 A CN 104900694A CN 201410075277 A CN201410075277 A CN 201410075277A CN 104900694 A CN104900694 A CN 104900694A
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metal oxide
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韩广涛
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CSMC Technologies Corp
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Abstract

本发明涉及一种横向扩散金属氧化物半导体器件，包括浅沟槽隔离结构和多晶硅栅极，多晶硅栅极部分覆盖于浅沟槽隔离结构上，浅沟槽隔离结构上开有凹槽，器件还包括与多晶硅栅极直接连接且填充入凹槽内的延伸部，延伸部的材质为半导体材料或金属材料。本发明还涉及一种横向扩散金属氧化物半导体器件的制造方法。本发明覆盖在STI上方的多晶硅栅极延伸至STI内的凹槽，与漂移区silicon间有效距离变小、电容变大，即使有电荷被俘获在STI的边角，也会由于栅压的作用而减弱其对Idlin的影响，减小Idlin退化、提高器件的HCL寿命。器件在关态时，延伸部可增强漂移区耗尽，开态时栅压又能增强对STI旁边及被多晶硅覆盖的下方区域中N型杂质的积累，既能提高off-BV，又能降低Rdson。

Description

横向扩散金属氧化物半导体器件及其制造方法
技术领域
本发明涉及半导体器件，特别是涉及一种LDMOS器件，还涉及一种LDMOS器件的制造方法。
背景技术
随着横向扩散金属氧化物半导体（LDMOS）器件在集成电路中的应用越来越广泛，对于关态崩溃电压（off-BV）更高，导通电阻（Rdson）更小的LDMOS的需求越来越迫切。而Rdson越小，意味着漂移区浓度越高，LDMOS在工作时的电场就越大，热载流子注入（HCI）现象越严重，器件寿命越差。尤其是漂移区有浅沟槽隔离（STI）结构的LDMOS，由于开态时，电流会直接流经STI边角处，在此处产生较强的碰撞电离，使热载流子注入到STI边角处，导致器件退化。
一种解决方法是通过拉大P阱与STI之间的距离，使电流在漂移区提前分流，不再完全通过STI边角处，碰撞电离的位置也会远离STI边角，从而减少STI边角处对电荷的俘获，提高器件寿命。
然而，P阱与STI间距离拉大的同时，导通电阻也会变大，甚至由于N型杂质增加后，漂移区难以完全耗尽，导致off-BV降低。
发明内容
基于此，有必要提供一种既能解决热载流子注入问题、又能够兼顾off-BV和Rdson的横向扩散金属氧化物半导体器件。
一种横向扩散金属氧化物半导体器件，包括浅沟槽隔离结构和多晶硅栅极，所述多晶硅栅极部分覆盖于浅沟槽隔离结构上，所述浅沟槽隔离结构上开有凹槽，所述器件还包括与所述多晶硅栅极直接连接且填充入所述凹槽内的延伸部，所述延伸部的材质为半导体材料或金属材料。
在其中一个实施例中，所述延伸部为与所述多晶硅栅极一体的多晶硅。
在其中一个实施例中，所述延伸部向下伸入所述凹槽的深度为0.1微米-0.7微米，凹槽所在的浅沟槽隔离结构的深度为0.2微米～0.8微米。
在其中一个实施例中，所述横向扩散金属氧化物半导体器件为N沟道横向扩散金属氧化物半导体器件。
还有必要提供一种横向扩散金属氧化物半导体器件的制造方法。
一种横向扩散金属氧化物半导体器件的制造方法，包括形成浅沟槽隔离结构的步骤，还包括通过光刻和刻蚀在所述浅沟槽隔离结构上形成凹槽的步骤，和形成多晶硅栅极及与所述多晶硅栅极直接连接且填充入所述凹槽内的延伸部的步骤，所述多晶硅栅极部分覆盖于浅沟槽隔离结构上，所述延伸部的材质为半导体材料或金属材料。
在其中一个实施例中，所述延伸部为与所述多晶硅栅极一体的多晶硅，所述形成多晶硅栅极及与所述多晶硅栅极直接连接且填充入所述凹槽内的延伸部的步骤，是淀积多晶硅，所述多晶硅延覆盖在所述浅沟槽隔离结构上的部分填充入所述凹槽内。
在其中一个实施例中，所述凹槽的深度为0.1微米-0.7微米，凹槽所在的浅沟槽隔离结构的深度为0.2微米～0.8微米。
在其中一个实施例中，所述横向扩散金属氧化物半导体器件是N沟道横向扩散金属氧化物半导体器件。
上述横向扩散金属氧化物半导体器件，覆盖在STI上方的多晶硅栅极通过延伸部延伸至STI内的凹槽中，与漂移区silicon间的距离变小、电容变大，在器件使用过程中，即使有电荷被俘获在STI的边角处，也会由于栅压的作用而减弱其对线性驱动电流（Idlin）的影响，从而减小Idlin退化、提高器件的热载流子注入寿命。器件在关态时，延伸部可以增强漂移区耗尽，开态时栅压又能增强对STI旁边及被多晶硅覆盖的下方区域中N型杂质的积累，既能提高关态崩溃电压（off-BV），又能降低导通电阻（Rdson）。
附图说明
图1是传统的带有STI的NLDMOS器件的剖面示意图；
图2是一实施例中NLDMOS器件的剖面示意图；
图3是图1所示NLDMOS器件的电流流向图；
图4是图2所示NLDMOS器件的电流流向图；
图5是图1所示NLDMOS器件的碰撞电离分布图；
图6是图2所示NLDMOS器件的碰撞电离分布图。
具体实施方式
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
图1为一种传统的带有STI的N沟道横向扩散金属氧化物半导体（NLDMOS）器件的剖面示意图，图2是本发明一实施例中NLDMOS器件的剖面示意图。图2所示的NLDMOS器件包括衬底150、漂移区140、阱区130、漂移区140内的漏极142、阱区130内的衬底引出区132、阱区130内的源极134、将漏极142与阱区130分隔开的STI结构120、以及栅极110。本实施例利用一次光刻和刻蚀，在STI结构120中形成一定深度的凹槽，与多晶硅栅极110直接连接的延伸部112填充入凹槽内。在本实施例中，是淀积多晶硅使得其覆盖在STI结构120上的部分填充入凹槽内，形成延伸部112。在其它实施例中，也可以使用其它半导体材料或金属材料作为延伸部112，只要其电阻率合适、并与多晶硅栅极110电性连接就也能达到相应的效果。
上述横向扩散金属氧化物半导体器件，多晶硅栅极110与N型漂移区间的距离变小、电容变大，即使有电荷被俘获在STI结构120的边角处，也会由于栅压的作用而减弱其对线性驱动电流（Idlin）的影响，从而减小Idlin退化、提高器件的HCI寿命。
请参照图2，在本实施例中，STI结构120的深度为0.2-0.8微米，通过刻蚀在STI结构120中形成的凹槽的深度为0.1-0.7微米，因此延伸部112向下伸入凹槽的深度a为0.1-0.7微米。
除去上述使HCI寿命提高的效应以外，还有下述直接减少电荷trap量的效应。
图3是图1所示NLDMOS器件的电流流向图，图4是图2所示NLDMOS器件的电流流向图，可以看到电流路径201远离了延伸部112附近的STI边角。图5是图1所示NLDMOS器件的碰撞电离分布图，图6是图2所示NLDMOS器件的碰撞电离分布图，示出了碰撞电离（Impact Ionization）的情况，可以看到碰撞电离区域203远离了延伸部112附近的STI边角，并且有所减弱。上述横向扩散金属氧化物半导体器件开态时的电流流经路径远离了STI结构120的边角，使STI边角处的碰撞电离减弱，那么STI边角处对热载流子的俘获就会减少，HCI寿命提高。
由于多晶硅栅极110延伸至STI结构120内部，器件在关态时，延伸部112的多晶硅可以增强漂移区耗尽，开态时栅压又能增强对STI结构120旁边及被多晶硅覆盖的下方区域中N型杂质的积累，既能提高关态崩溃电压（off-BV），又能降低导通电阻（Rdson）。也就是说本发明中不仅可以提高器件的HCI寿命，同时还可以使器件的off-BV更高，Rdson更小。在上述结构的基础上，若将P阱与STI结构120间的距离适当拉大，可以使HCI寿命更高，而off-BV和Rdson依然能够优于传统结构的LDMOS。
可以理解的，上述实施例中是以N沟道横向扩散金属氧化物半导体器件为例进行说明，但上述结构和制造方法同样适用于P沟道横向扩散金属氧化物半导体器件。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (8)

1.一种横向扩散金属氧化物半导体器件，包括浅沟槽隔离结构和多晶硅栅极，所述多晶硅栅极部分覆盖于浅沟槽隔离结构上，其特征在于，所述浅沟槽隔离结构上开有凹槽，所述器件还包括与所述多晶硅栅极直接连接且填充入所述凹槽内的延伸部，所述延伸部的材质为半导体材料或金属材料。
2.根据权利要求1所述的横向扩散金属氧化物半导体器件，其特征在于，所述延伸部为与所述多晶硅栅极一体的多晶硅。
3.根据权利要求1或2所述的横向扩散金属氧化物半导体器件，其特征在于，所述延伸部向下伸入所述凹槽的深度为0.1微米-0.7微米，凹槽所在的浅沟槽隔离结构的深度为0.2微米～0.8微米。
4.根据权利要求1所述的横向扩散金属氧化物半导体器件，其特征在于，所述横向扩散金属氧化物半导体器件为N沟道横向扩散金属氧化物半导体器件。
5.一种横向扩散金属氧化物半导体器件的制造方法，包括形成浅沟槽隔离结构的步骤，其特征在于，还包括通过光刻和刻蚀在所述浅沟槽隔离结构上形成凹槽的步骤，和形成多晶硅栅极及与所述多晶硅栅极直接连接且填充入所述凹槽内的延伸部的步骤，所述多晶硅栅极部分覆盖于浅沟槽隔离结构上，所述延伸部的材质为半导体材料或金属材料。
6.根据权利要求5所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述延伸部为与所述多晶硅栅极一体的多晶硅，所述形成多晶硅栅极及与所述多晶硅栅极直接连接且填充入所述凹槽内的延伸部的步骤，是淀积多晶硅，所述多晶硅延覆盖在所述浅沟槽隔离结构上的部分填充入所述凹槽内。
7.根据权利要求5或6所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述凹槽的深度为0.1微米-0.7微米，凹槽所在的浅沟槽隔离结构的深度为0.2微米～0.8微米。
8.根据权利要求5所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述横向扩散金属氧化物半导体器件是N沟道横向扩散金属氧化物半导体器件。
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