CN102214739A - Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) - Google Patents
Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) Download PDFInfo
- Publication number
- CN102214739A CN102214739A CN2011101360886A CN201110136088A CN102214739A CN 102214739 A CN102214739 A CN 102214739A CN 2011101360886 A CN2011101360886 A CN 2011101360886A CN 201110136088 A CN201110136088 A CN 201110136088A CN 102214739 A CN102214739 A CN 102214739A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- layer
- growth
- light emitting
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a flow chart on a method for roughing the epitaxy of a GaN (gallium nitride)-based LED (light-emitting diode). The method comprises the following steps: selecting a substrate; growing a AlInGaN nucleating layer on the substrate; growing an involuntary doped GaN layer on the AlInGaN nucleating layer; growing an N-type doped GaN layer on the involuntary doped GaN layer; growing a AlInGaN multiple quantum well luminous layer on the N-type doped GaN layer; growing a P-type doped AlInGaN layer on the AlInGaN multiple quantum well luminous layer, wherein the P-type doped AlInGaN layer is a monolayer AlInGaN laminated structure or a AlInGaN laminated structure with different components and thicknesses; and growing a P-type doped GaN layer on the P-type doped AlInGaN layer. By using the method, the surface roughness of the P-type doped AlInGaN layer is realized when the P-type doped AlInGaN layer grows; the efficiency of a manufactured LED is improved by over 30% relative to the efficiency of a traditional LED; and the electrical properties of the manufactured LED are good.
Description
Technical field
The present invention relates to the gallium nitride based light emitting diode preparing technical field, especially a kind of extension method of roughening of gallium nitride based light emitting diode.
Background technology
Light-emitting diode (LED) industry belongs to the relevant high-tech industry of semiconductor, be in the extension of upstream and the key that chip manufacturing is whole industry, the performance and the price of middle and lower reaches products that this not only has been embodied in the performance of upstream extension and chip and price decision also is embodied in patent and standard that extension and chip supplier are often controlling whole industry.The performance of LED extension and chip has determined the performance of entire product to a great extent.
Current, along with the raising of efficient and the expansion of output, gallium nitride (GaN) based light-emitting diode permeates towards the various aspects of lighting field, but the field that needs super brightness at general illumination etc., the market share of GaN base LED is also very little, it is exactly to reduce the price of the lm of unit that GaN base LED enters the significant problem that this field need solve, and promptly improves constantly the luminous efficiency of its unit price.
Surface coarsening is a highly effective method that improves GaN base LED luminous efficiency, the extension method of roughening of existing gallium nitride based LED mainly comprises: behind the conventional quantum well radiation district growth ending, one section pGaN of growth at first heats up, and then cooling, and regulate pressure, flow and method such as logical Mg impurity processing in advance, and then the thicker roughened layer pGaN of growth, generally need 30 minutes to 1 hour; This roughening process complexity, growth time is long, this type of method for coarsening surface surface particles is big, pattern is difficult to control, and the electrode contact problems in the time of can causing subsequent device to prepare cause consequences such as the power down utmost point, electric leakage, and can be in the normal use of LED along with the time increases, the electrode contact occurs and degenerate, phenomenons such as light decay aggravation seriously reduce the reliability of LED.
This shows that there is complicated process of preparation in existing extension coarsening technique, extension alligatoring growth elapsed time is long, reaches problems such as electric leakage is big, antistatic effect is weak, light decay is serious, has reduced overall production capacity and the chip yield and the reliability thereof of MOCVD equipment.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of extension method of roughening of gallium nitride based LED, surface topography is difficult to control in the extension alligatoring growth course to solve, growth time is long, be prepared into behind the device problems such as poor reliability, reach and improve GaN base LED luminous efficiency, and simplify technology, improve production capacity, and keep the good device photoelectric characteristic and the purpose of reliability.
(2) technical scheme
For achieving the above object, the invention provides a kind of extension method of roughening of gallium nitride based light emitting diode, comprising:
Select a substrate;
Growth one aluminum indium gallium nitride nucleating layer on this substrate;
The involuntary doped gallium nitride layer of growth on this aluminum indium gallium nitride nucleating layer;
The gallium nitride layer that growth N type mixes on this involuntary doped gallium nitride layer;
Growing aluminum nitride gallium indium multiple quantum well light emitting layer on the gallium nitride layer that this N type mixes;
The aluminum indium gallium nitride layer that growing P-type mixes on this aluminum indium gallium nitride multiple quantum well light emitting layer, this layer is the aluminum indium gallium nitride laminated construction of individual layer or different component and thickness; And
The gallium nitride layer that growing P-type mixes on the aluminum indium gallium nitride layer that this P type mixes.
In the such scheme, described substrate is sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate.Perhaps, the patterned substrate that described substrate is made into for the Surface Machining to sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate, the figure bottom size is 0.1-10 μ m, and the figure spacing is 0.1-5 μ m, and the figure height is 0.1-5 μ m.
In the such scheme, the described aluminum indium gallium nitride nucleating layer of growing on substrate adopts metallo-organic compound physical vapor epitaxy, and this aluminum indium gallium nitride nucleating layer is Al
xIn
yGa
1-x-yN nucleating layer, wherein 0≤x≤1,0≤y≤1; Growth temperature is 500-800 ℃, and growth pressure is 10000-100000Pa, and growth thickness is 0.01-0.1 μ m.
In the such scheme, in the step of the described involuntary doped gallium nitride layer of growing on this aluminum indium gallium nitride nucleating layer, growth temperature is 900-1100 ℃, and growth pressure is 10000-60000Pa, and growth thickness is 1-5 μ m.
In the such scheme, in the step of the described gallium nitride layer that growth N type mixes on involuntary doped gallium nitride layer, growth temperature is 1000-1100 ℃, and growth pressure is 10000-60000Pa, growth thickness is 1-5 μ m, and its n type doped chemical is Si and the element that can form n type impurity in GaN.
In the such scheme, described on the gallium nitride layer that the N type mixes in the step of growing aluminum nitride gallium indium multiple quantum well light emitting layer, growth temperature is 600-900 ℃, and growth pressure is 10000-60000Pa, the Al of Multiple Quantum Well
xIn
yGa
1-x-yThe N potential barrier thickness is 0.005-0.05 μ m, Ga
1-xIn
xN quantum well thickness is 0.001-0.01 μ m, and wherein the logarithm of Multiple Quantum Well is that 1-30 is right.
In the such scheme, in the step of the described aluminum indium gallium nitride layer that growing P-type mixes on aluminum indium gallium nitride multiple quantum well light emitting layer, the Al that the aluminum indium gallium nitride layer that this P type mixes mixes for the p type
xIn
yGa
1-x-yThe N layer, 0≤x≤1,0≤y≤1 wherein, growth temperature is 900-1100 ℃, pressure is 5000-60000Pa.
In the such scheme, in the step of the described aluminum indium gallium nitride layer that growing P-type mixes on aluminum indium gallium nitride multiple quantum well light emitting layer, for monolayer material, its thickness is 0.005-0.1 μ m; For laminated construction, its thickness in monolayer is 0.001 μ m-0.1 μ m, and the stepped construction logarithm is 2 to 30 pairs; The foreign atom of this layer is magnesium or zinc, and this foreign atom concentration reaches 5.0 * 10 at least
18Cm
-3
In the such scheme, in the step of the described gallium nitride layer that growing P-type mixes on the aluminum indium gallium nitride layer that the P type mixes, growth temperature is 800-1100 ℃, pressure is 10000-60000Pa, growth thickness is 0.1-1 μ m, and this gallium nitride layer is the surface coarsening layer, and alligatoring is of a size of 0.03-1 μ m.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilize the present invention, owing to control the distribution of going up threading dislocation the hand control epitaxial loayer from mechanism of nucleation and epitaxial loayer dislocation, so can well hold the stress state between each layer in the epitaxial loayer, the alligatoring mode is controlled easily.
2, utilize the present invention, do not change technology owing to introduce complicated growth conditions, realize surface coarsening so pain is crossed simple process means, mechanism is simple, and the realization means are easy.
3, utilize the present invention, because nucleation process and the good isomeric growth of coarsening process, so ... it is relatively good that surface topography is controlled, and its comprehensive yield and reliability all were improved when brightness improved.
Description of drawings
Fig. 1 is the flow chart of the extension method of roughening of gallium nitride based LED provided by the invention;
Fig. 2 is the microscope pattern of epitaxially grown LED surface coarsening of the present invention;
Fig. 3 is the LED light intensity and the contrast of not adopting surface coarsening technology LED light intensity that adopts the surface coarsening technology.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The extension method of roughening of gallium nitride based LED provided by the invention, not to change growth atmosphere and temperature when only passing through epi-layer surface pGaN growth, conditions such as pressure realize alligatoring, but control the distribution of going up threading dislocation the hand control epitaxial loayer from mechanism of nucleation and epitaxial loayer dislocation, and then in follow-up growth, realize surface coarsening by simple process means, mechanism is simple, the realization means are easy, and do not introduce complicated growth conditions and change technology, saved the epitaxial growth time, and surface topography control is relatively good, and its comprehensive yield and reliability all were improved when brightness improved.
Key of the present invention is to set about from mechanism of nucleation and the control of epitaxial loayer dislocation, the distribution of threading dislocation in the control epitaxial loayer, and then in follow-up growth, realize surface coarsening, the brightness that can improve the LED device greatly by simple process means.
The extension method of roughening of gallium nitride based LED provided by the invention, concrete grammar is to introduce Al and In element during by nucleation, regulate the two and Ga atoms of elements proportioning, change over the stress state lattice match of stratum nucleare, control GaN is by the position of three dimensional growth to the two-dimensional growth transformation, thereby the control dislocation distributes, and utilizes multiple quantum well layer and subsequent Al
xIn
yGa
1-x-yThe lattice mismatch of N layer, modulation stress make the surface coarsening when the most surperficial appearance of this layer is crack to be split as alligatoring position realization pGaN growth.The LED efficient of preparing not alligatoring structure has relatively improved more than 30%, and its electrical properties is good.
As shown in Figure 1, Fig. 1 is the flow chart of the extension method of roughening of gallium nitride based LED provided by the invention, and this method may further comprise the steps: select a substrate; Growth one aluminum indium gallium nitride nucleating layer on this substrate; The involuntary doped gallium nitride layer of growth on this aluminum indium gallium nitride nucleating layer; The gallium nitride layer that growth N type mixes on this involuntary doped gallium nitride layer; Growing aluminum nitride gallium indium multiple quantum well light emitting layer on the gallium nitride layer that this N type mixes; The aluminum indium gallium nitride layer that growing P-type mixes on this aluminum indium gallium nitride multiple quantum well light emitting layer, this layer is the aluminum indium gallium nitride laminated construction of individual layer or different component and thickness; And the gallium nitride layer that growing P-type mixes on the aluminum indium gallium nitride layer that this P type mixes.
Wherein, described substrate is sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate; Perhaps, the patterned substrate that described substrate is made into for the Surface Machining to sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate, the figure bottom size is 0.1-10 μ m, and the figure spacing is 0.1-5 μ m, and the figure height is 0.1-5 μ m.
The described aluminum indium gallium nitride nucleating layer of growing on substrate adopts metallo-organic compound physical vapor epitaxy, and this aluminum indium gallium nitride nucleating layer is Al
xIn
yGa
1-x-yN nucleating layer, wherein 0≤x≤1,0≤y≤1; Growth temperature is 500-800 ℃, and growth pressure is 10000-100000Pa, and growth thickness is 0.01-0.1 μ m.
In the step of the described involuntary doped gallium nitride layer of growing on this aluminum indium gallium nitride nucleating layer, growth temperature is 900-1100 ℃, and growth pressure is 10000-60000Pa, and growth thickness is 1-5 μ m.
In the step of the described gallium nitride layer that growth N type mixes on involuntary doped gallium nitride layer, growth temperature is 1000-1100 ℃, growth pressure is 10000-60000Pa, and growth thickness is 1-5 μ m, and its n type doped chemical is Si and the element that can form n type impurity in GaN.
Described on the gallium nitride layer that the N type mixes in the step of growing aluminum nitride gallium indium multiple quantum well light emitting layer, growth temperature is 600-900 ℃, and growth pressure is 10000-60000Pa, the Al of Multiple Quantum Well
xIn
yGa
1-x-yThe N potential barrier thickness is 0.005-0.05 μ m, Ga
1-xIn
xN quantum well thickness is 0.001-0.01 μ m, and wherein the logarithm of Multiple Quantum Well is that 1-30 is right.
In the step of the described aluminum indium gallium nitride layer that growing P-type mixes on aluminum indium gallium nitride multiple quantum well light emitting layer, the Al that the aluminum indium gallium nitride layer that this P type mixes mixes for the p type
xIn
yGa
1-x-yThe N layer, 0≤x≤1,0≤y≤1 wherein, growth temperature is 900-1100 ℃, pressure is 5000-60000Pa.For monolayer material, its thickness is 0.005-0.1 μ m; For laminated construction, its thickness in monolayer is 0.001 μ m-0.1 μ m, and the stepped construction logarithm is 2 to 30 pairs; The foreign atom of this layer is magnesium or zinc, and this foreign atom concentration reaches 5.0 * 10 at least
18Cm
-3
In the step of the described gallium nitride layer that growing P-type mixes on the aluminum indium gallium nitride layer that the P type mixes, growth temperature is 800-1100 ℃, and pressure is 10000-60000Pa, and growth thickness is 0.1-1 μ m, this gallium nitride layer is the surface coarsening layer, and alligatoring is of a size of 0.03-1 μ m.
In the extension method of roughening of the gallium nitride based LED that present embodiment provides, used epitaxial device is the business PC that German AIXTRON company produces, and model is Crius 31x2 '.Used group V source is ammonia (NH
3), III family metal organic source material is trimethyl gallium (TMGa) and trimethyl indium (TMIn), except growth multiquantum well region N
2The carrier gas of doing the outer remainder layer of carrier gas is H
2, p type and n type impurity are respectively Mg, Si.
At first, behind the MOCVD growth apparatus of packing on 2 inches the Sapphire Substrate, be warmed up to 1100 ℃ of high-temperature bakings earlier, reative cell cools to 600 ℃ then, pressure is 40000Pa growing low temperature aluminum indium gallium nitride nucleating layer, the flow of Al, Ga, In is respectively 15 standard ml/min, 75 standard ml/min, 20 standard ml/min, and ammonia flow is 15 standard liter/min, and growth time is 100-200 second; Be warmed up to 1100 ℃ of nucleation of carrying out GaN afterwards with closed, the GaN layer growth that involuntary Doped GaN layer and n type mix; Then system switches to N
2Atmosphere, pressure 40000Pa, and respectively growing gallium nitride indium quantum well and aluminum indium gallium nitride quantum are built the multiple quantum well light emitting district that constitutes to cool to 750-900 ℃; Switch to H afterwards
2Atmosphere, reaction chamber temperature are elevated to the sandwich construction of 1000 ℃ of growth Mg doped p type aluminum indium gallium nitrides and gallium nitride, grow 5 layers altogether, and aluminum indium gallium nitride thickness and gallium nitride thickness all are 0.005 μ m.The Mg doped p of growing afterwards type gallium nitride roughened layer, surface roughness is 0.05-0.2 μ m, promptly finishes the growth of complete light emitting diode construction.
Fig. 2 shows the microscope pattern of epitaxially grown LED surface coarsening of the present invention, and Fig. 3 shows LED light intensity that adopts the surface coarsening technology and the contrast of not adopting surface coarsening technology LED light intensity.Utilize the LED structure of the surface coarsening that the present invention obtains, can effectively eliminate the light loss that goes out that the total reflection of GaN and air interface causes, improve the extraction efficiency of light-emitting diode, this coarsening technique does not have a negative impact to device processing procedure and reliability simultaneously.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the extension method of roughening of a gallium nitride based light emitting diode is characterized in that, comprising:
Select a substrate;
Growth one aluminum indium gallium nitride nucleating layer on this substrate;
The involuntary doped gallium nitride layer of growth on this aluminum indium gallium nitride nucleating layer;
The gallium nitride layer that growth N type mixes on this involuntary doped gallium nitride layer;
Growing aluminum nitride gallium indium multiple quantum well light emitting layer on the gallium nitride layer that this N type mixes;
The aluminum indium gallium nitride layer that growing P-type mixes on this aluminum indium gallium nitride multiple quantum well light emitting layer, this layer is the aluminum indium gallium nitride laminated construction of individual layer or different component and thickness; And
The gallium nitride layer that growing P-type mixes on the aluminum indium gallium nitride layer that this P type mixes.
2. the extension method of roughening of gallium nitride based light emitting diode according to claim 1 is characterized in that, described substrate is sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate.
3. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, the patterned substrate that described substrate is made into for the Surface Machining to sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate, the figure bottom size is 0.1-10 μ m, the figure spacing is 0.1-5 μ m, and the figure height is 0.1-5 μ m.
4. the extension method of roughening of gallium nitride based light emitting diode according to claim 1 is characterized in that, the described aluminum indium gallium nitride nucleating layer of growing on substrate adopts metallo-organic compound physical vapor epitaxy, and this aluminum indium gallium nitride nucleating layer is Al
xIn
yGa
1-x-yN nucleating layer, wherein 0≤x≤1,0≤y≤1; Growth temperature is 500-800 ℃, and growth pressure is 10000-100000Pa, and growth thickness is 0.01-0.1 μ m.
5. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, in the step of the described involuntary doped gallium nitride layer of on this aluminum indium gallium nitride nucleating layer, growing, growth temperature is 900-1100 ℃, growth pressure is 10000-60000Pa, and growth thickness is 1-5 μ m.
6. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, in the step of the described gallium nitride layer that growth N type mixes on involuntary doped gallium nitride layer, growth temperature is 1000-1100 ℃, growth pressure is 10000-60000Pa, growth thickness is 1-5 μ m, and its n type doped chemical is Si and the element that can form n type impurity in GaN.
7. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, described on the gallium nitride layer that the N type mixes in the step of growing aluminum nitride gallium indium multiple quantum well light emitting layer, growth temperature is 600-900 ℃, growth pressure is 10000-60000Pa, the Al of Multiple Quantum Well
xIn
yGa
1-x-yThe N potential barrier thickness is 0.005-0.05 μ m, Ga
1-xIn
xN quantum well thickness is 0.001-0.01 μ m, and wherein the logarithm of Multiple Quantum Well is that 1-30 is right.
8. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, in the step of the described aluminum indium gallium nitride layer that growing P-type mixes on aluminum indium gallium nitride multiple quantum well light emitting layer, the Al that the aluminum indium gallium nitride layer that this P type mixes mixes for the p type
xIn
yGa
1-x-yThe N layer, 0≤x≤1,0≤y≤1 wherein, growth temperature is 900-1100 ℃, pressure is 5000-60000Pa.
9. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, in the step of the described aluminum indium gallium nitride layer that growing P-type mixes on aluminum indium gallium nitride multiple quantum well light emitting layer, for monolayer material, its thickness is 0.005-0.1 μ m; For laminated construction, its thickness in monolayer is 0.001 μ m-0.1 μ m, and the stepped construction logarithm is 2 to 30 pairs; The foreign atom of this layer is magnesium or zinc, and this foreign atom concentration reaches 5.0 * 10 at least
18Cm
-3
10. the extension method of roughening of gallium nitride based light emitting diode according to claim 1, it is characterized in that, in the step of the described gallium nitride layer that growing P-type mixes on the aluminum indium gallium nitride layer that the P type mixes, growth temperature is 800-1100 ℃, pressure is 10000-60000Pa, growth thickness is 0.1-1 μ m, and this gallium nitride layer is the surface coarsening layer, and alligatoring is of a size of 0.03-1 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101360886A CN102214739A (en) | 2011-05-24 | 2011-05-24 | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101360886A CN102214739A (en) | 2011-05-24 | 2011-05-24 | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102214739A true CN102214739A (en) | 2011-10-12 |
Family
ID=44745961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101360886A Pending CN102214739A (en) | 2011-05-24 | 2011-05-24 | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102214739A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364706A (en) * | 2011-11-17 | 2012-02-29 | 扬州中科半导体照明有限公司 | Epitaxy production method of light emitting diode (LED) |
| CN102534769A (en) * | 2012-03-21 | 2012-07-04 | 中国科学院半导体研究所 | Method for growing gallium nitride epitaxial structure on patterned substrate |
| CN102969425A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Method for growing nitride light-emitting diode (LED) epitaxial wafer with reversed V-shaped coarsening surface |
| CN103325908A (en) * | 2013-05-25 | 2013-09-25 | 王敏帅 | Method for manufacturing LED epitaxial wafer with hexagonal coarsened surface |
| US9076912B2 (en) | 2012-11-19 | 2015-07-07 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| CN104911699A (en) * | 2015-05-03 | 2015-09-16 | 北京工业大学 | Method for MOCVD epitaxy roughening of P-type GaN surface |
| US9147800B2 (en) | 2012-11-19 | 2015-09-29 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| TWI556467B (en) * | 2012-11-19 | 2016-11-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure |
| CN106848017A (en) * | 2016-12-15 | 2017-06-13 | 华灿光电（浙江）有限公司 | The epitaxial wafer and its growing method of a kind of GaN base light emitting |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| CN106981549A (en) * | 2017-04-19 | 2017-07-25 | 华南理工大学 | The gallium nitride nano-pillar LED of growth on a silicon substrate and preparation method thereof |
| CN107316924A (en) * | 2013-01-25 | 2017-11-03 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| TWI610460B (en) * | 2012-11-19 | 2018-01-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure |
| TWI637531B (en) * | 2012-11-19 | 2018-10-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
| US10153394B2 (en) | 2012-11-19 | 2018-12-11 | Genesis Photonics Inc. | Semiconductor structure |
| TWI649896B (en) * | 2012-11-19 | 2019-02-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
-
2011
- 2011-05-24 CN CN2011101360886A patent/CN102214739A/en active Pending
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364706A (en) * | 2011-11-17 | 2012-02-29 | 扬州中科半导体照明有限公司 | Epitaxy production method of light emitting diode (LED) |
| CN102534769B (en) * | 2012-03-21 | 2015-01-28 | 中国科学院半导体研究所 | Method for growing gallium nitride epitaxial structure on patterned substrate |
| CN102534769A (en) * | 2012-03-21 | 2012-07-04 | 中国科学院半导体研究所 | Method for growing gallium nitride epitaxial structure on patterned substrate |
| CN102969425A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Method for growing nitride light-emitting diode (LED) epitaxial wafer with reversed V-shaped coarsening surface |
| US10381511B2 (en) | 2012-11-19 | 2019-08-13 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| USRE47088E1 (en) | 2012-11-19 | 2018-10-16 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9147800B2 (en) | 2012-11-19 | 2015-09-29 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| TWI556467B (en) * | 2012-11-19 | 2016-11-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure |
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US10147845B2 (en) | 2012-11-19 | 2018-12-04 | Genesis Photonics Inc. | Semiconductor structure |
| US9076912B2 (en) | 2012-11-19 | 2015-07-07 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| TWI649896B (en) * | 2012-11-19 | 2019-02-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure |
| TWI637531B (en) * | 2012-11-19 | 2018-10-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
| US10153394B2 (en) | 2012-11-19 | 2018-12-11 | Genesis Photonics Inc. | Semiconductor structure |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| TWI610460B (en) * | 2012-11-19 | 2018-01-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure |
| CN107316924A (en) * | 2013-01-25 | 2017-11-03 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN103325908B (en) * | 2013-05-25 | 2017-08-29 | 集美大学 | A kind of preparation method of the LED of hexagon coarse surface |
| CN103325908A (en) * | 2013-05-25 | 2013-09-25 | 王敏帅 | Method for manufacturing LED epitaxial wafer with hexagonal coarsened surface |
| CN104911699A (en) * | 2015-05-03 | 2015-09-16 | 北京工业大学 | Method for MOCVD epitaxy roughening of P-type GaN surface |
| CN104911699B (en) * | 2015-05-03 | 2017-09-29 | 北京工业大学 | A kind of MOCVD epitaxy is roughened p-type GaN surface methods |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN106848017A (en) * | 2016-12-15 | 2017-06-13 | 华灿光电（浙江）有限公司 | The epitaxial wafer and its growing method of a kind of GaN base light emitting |
| CN106848017B (en) * | 2016-12-15 | 2019-08-23 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer and its growing method of GaN base light emitting |
| CN106981549A (en) * | 2017-04-19 | 2017-07-25 | 华南理工大学 | The gallium nitride nano-pillar LED of growth on a silicon substrate and preparation method thereof |
| CN106981549B (en) * | 2017-04-19 | 2023-05-23 | 华南理工大学 | Gallium nitride nano-pillar LED epitaxial wafer grown on silicon substrate and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102214739A (en) | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) | |
| CN102368519B (en) | A kind of method improving semiconductor diode multiple quantum well light emitting efficiency | |
| CN102306691B (en) | Method for raising light emitting diode luminescence efficiency | |
| CN104409587B (en) | A kind of InGaN base blue-green light LED epitaxial structure and growing method | |
| CN101540359B (en) | Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof | |
| CN103730554B (en) | A kind of growing method of GaN-based LED epitaxial wafer | |
| CN101771121A (en) | Structure of SiC or Si substrate GaN-based crystal and method for growing same | |
| CN103811601B (en) | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate | |
| CN102214740A (en) | Method for improving antistatic capability of gallium nitride based light emitting diode | |
| CN106711295B (en) | A kind of growing method of GaN base light emitting epitaxial wafer | |
| CN102709424A (en) | Method for improving luminous efficiency of light-emitting diode | |
| CN102064254A (en) | High-quality gallium nitride light-emitting diode | |
| CN103413877A (en) | Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure | |
| CN105633235A (en) | GaN-based LED epitaxial structure with n type GaN structure and growing method thereof | |
| CN102769078A (en) | Method for manufacturing high-growth-rate LED (light-emitting diode) with P-type GaN structure | |
| CN104882522A (en) | Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method | |
| CN102867892A (en) | In-doped low-temperature growth P type GaN epitaxial method | |
| CN105762240B (en) | A kind of UV LED epitaxial structure and preparation method thereof | |
| CN103346219B (en) | The growing method of compound multiple quantum well light emitting Rotating fields and LED epitaxial structure | |
| CN103400914A (en) | Epitaxial structure for improving GaN (Gallium Nitride)-based current spreading and growth method thereof | |
| CN103258926A (en) | LED vertical chip structure and manufacturing method | |
| CN103337571B (en) | Improve epitaxial structure and the growing method of wavelength concentration in GaN base epitaxial wafer | |
| CN106033788B (en) | A kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies | |
| CN103137808A (en) | Gallium nitride light-emitting diode (LED) with low-temperature n-type inserted layer and preparation method thereof | |
| CN103337451A (en) | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111012 |