CN104882365B - 一种碳化硅表面处理方法 - Google Patents
一种碳化硅表面处理方法 Download PDFInfo
- Publication number
- CN104882365B CN104882365B CN201410072719.6A CN201410072719A CN104882365B CN 104882365 B CN104882365 B CN 104882365B CN 201410072719 A CN201410072719 A CN 201410072719A CN 104882365 B CN104882365 B CN 104882365B
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- CN
- China
- Prior art keywords
- silicon carbide
- temperature
- carborundum
- carbide powder
- heating
- Prior art date
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 238000003672 processing method Methods 0.000 title description 15
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010792 warming Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410072719.6A CN104882365B (zh) | 2014-02-28 | 2014-02-28 | 一种碳化硅表面处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410072719.6A CN104882365B (zh) | 2014-02-28 | 2014-02-28 | 一种碳化硅表面处理方法 |
Publications (2)
Publication Number | Publication Date |
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CN104882365A CN104882365A (zh) | 2015-09-02 |
CN104882365B true CN104882365B (zh) | 2017-11-14 |
Family
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CN201410072719.6A Active CN104882365B (zh) | 2014-02-28 | 2014-02-28 | 一种碳化硅表面处理方法 |
Country Status (1)
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CN (1) | CN104882365B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109179422B (zh) * | 2018-08-29 | 2021-08-24 | 四川大学 | 一种大规模无定形硅颗粒的制备方法 |
CN113463191B (zh) * | 2021-07-23 | 2022-11-29 | 上海天岳半导体材料有限公司 | 一种表面颗粒物少的晶片及其处理方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101651101A (zh) * | 2009-09-14 | 2010-02-17 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅离子激活退火装置及碳化硅离子激活退火方法 |
CN102308031A (zh) * | 2009-03-06 | 2012-01-04 | 新日本制铁株式会社 | 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 |
CN103199008A (zh) * | 2013-03-11 | 2013-07-10 | 西安电子科技大学 | 零偏4H-SiC衬底上的同质外延方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4478797B2 (ja) * | 2005-05-25 | 2010-06-09 | 国立大学法人群馬大学 | シリコンカーバイド系多孔質体の製造方法 |
JP5565238B2 (ja) * | 2010-09-24 | 2014-08-06 | Tdk株式会社 | 磁気センサ及び磁気ヘッド |
-
2014
- 2014-02-28 CN CN201410072719.6A patent/CN104882365B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102308031A (zh) * | 2009-03-06 | 2012-01-04 | 新日本制铁株式会社 | 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 |
CN101651101A (zh) * | 2009-09-14 | 2010-02-17 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅离子激活退火装置及碳化硅离子激活退火方法 |
CN103199008A (zh) * | 2013-03-11 | 2013-07-10 | 西安电子科技大学 | 零偏4H-SiC衬底上的同质外延方法 |
Non-Patent Citations (1)
Title |
---|
零偏4H-SiC衬底上同质外延生长和表征技术研究;杨阳;《中国优秀硕士学位论文全文数据库·信息科技辑》;20130315;第I135-124页 * |
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CN104882365A (zh) | 2015-09-02 |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20191227 Address after: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: 100190 No. 8, South Third Street, Haidian District, Beijing, Zhongguancun Patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20150902 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Contract record no.: X2023990000682 Denomination of invention: A Surface Treatment Method for Silicon Carbide Granted publication date: 20171114 License type: Common License Record date: 20230725 |
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