CN104851935A - Graphene/indium phosphide solar cell regulated and controlled through electric field and preparation method - Google Patents
Graphene/indium phosphide solar cell regulated and controlled through electric field and preparation method Download PDFInfo
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- CN104851935A CN104851935A CN201510162547.6A CN201510162547A CN104851935A CN 104851935 A CN104851935 A CN 104851935A CN 201510162547 A CN201510162547 A CN 201510162547A CN 104851935 A CN104851935 A CN 104851935A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 77
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 73
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 230000005684 electric field Effects 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000001105 regulatory effect Effects 0.000 title abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910004140 HfO Inorganic materials 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- -1 ITO Chemical compound 0.000 claims 2
- 239000012994 photoredox catalyst Substances 0.000 claims 1
- 239000004417 polycarbonate Substances 0.000 claims 1
- 229920000139 polyethylene terephthalate Polymers 0.000 claims 1
- 239000005020 polyethylene terephthalate Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000004888 barrier function Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 4
- 238000011109 contamination Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a graphene/indium phosphide solar cell regulated and controlled through an electric field, the graphene/indium phosphide solar cell is provided with a back electrode, an indium phosphide layer, a graphene layer, an insulating medium layer and a grid electrode in sequence from bottom to top, the solar cell is also provided with a front electrode, and the front electrode is arranged on the graphene layer. The preparation steps includes: first manufacturing a back electrode on one side of a clean indium phosphide substrate; then removing contamination; then transferring graphene to the indium phosphide sheet; manufacturing a front electrode on the graphene; then manufacturing an insulating medium layer on the graphene; and finally manufacturing a grid electrode on the insulating medium layer. The graphene/indium phosphide solar cell regulated and controlled through the electric field can adjust the Fermi level position of the graphene by the external electric field, thereby changing a barrier potential difference of a graphene/indium phosphide heterojunction, and further adjusting the photoelectric conversion efficiency of the graphene/indium phosphide solar cell.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, Graphene/indium phosphide solar cell of especially a kind of electric field regulation and control and preparation method thereof, belongs to solar photovoltaic technology field.
Background technology
Solar power generation, as promising clean new forms of energy, plays more and more important effect to the sustainable development of human society.At present, crystal-silicon solar cell is in occupation of the leading position in market, and through development for many years, technique is ripe gradually, and the efficiency of commercial battery is close to the most high conversion efficiency in laboratory.In addition, crystal silicon cell technics comparing is complicated, goes through that silicon material is purified, crystal growth is to the preparation flow of cell piece.The battery structure that Seeking Development Through is new and technology, become research and an industrial circle difficult problem urgently to be resolved hurrily.Since Graphene tow-dimensions atom material finds, research shows, Graphene has high carrier mobility, high light transmittance and good conductivity.And the density of states near Graphene dirac point is low, and its Fermi level can realize larger adjustment.Graphene is expected to bring important application in field of optoelectronic devices.
Graphene and other two-dimensional material (as molybdenum bisuphide etc.) can form heterojunction, have photovoltaic effect.But due to the absorbance that two-dimensional material is low, cell conversion efficiency is lower.The heterojunction that Graphene and body semiconductor are formed, can realize higher conversion efficiency.What current research was more is Graphene and silicon heterojunction solar battery, and laboratory peak efficiency is to 15.6%.Because silicon is indirect gap semiconductor, III-V race's semiconductor is direct band gap, and less thickness just can absorb most light.Wherein, indium phosphide more can resist space radiation damage than silicon.Therefore, the present invention proposes heterojunction that Graphene and indium phosphide formed and solar cell.In addition, Graphene can change Fermi level by chemical doping, regulate the potential barrier of heterojunction, but chemical method is usually stable not.The present invention proposes, and by the Graphene/heterojunction of indium phosphide solar cell of electric field doping regulation and control, and is realized the preparation of device by simple technique, and obtains adjustable high battery conversion efficiency.
Summary of the invention
The object of the present invention is to provide a kind of electricity conversion high, Graphene/indium phosphide solar cell of the simple electric field regulation and control of technique and preparation method thereof.
Graphene/the indium phosphide solar cell of electric field regulation and control of the present invention, there are backplate, N-shaped adulterate or p-type is adulterated phosphorization phosphide indium layer, graphene layer, insulating medium layer and grid from bottom to top successively, described solar cell is also provided with front electrode, and front electrode is arranged on graphene layer.
In technique scheme, the Graphene in described graphene layer is 1-10 layer.
Described insulating medium layer is Al
2o
3, SiO
2, SiN
x, TiO
2, SiC, SiON, HfO
2, AlN, dimethyl silicone polymer (PDMS), polymethyl methacrylate (PMMA), PETG (PET), Merlon (PC), the lamination of one or more in polystyrene (PS) and boron nitride.
The thickness of described insulating medium layer is 1nm-100 μm.
Described backplate is gold, palladium, silver, titanium, platinum, chromium, nickel, one or several the combination electrode mixed in indium tin oxide (ITO), fluorine doped tin oxide (FTO) and aluminium-doped zinc oxide (AZO).
Described front electrode is one or several the combination electrode in gold, palladium, silver, titanium, copper, platinum, chromium, aluminium, ITO, FTO and AZO.
Described grid is one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel, Graphene, AZO, ITO and FTO.
Prepare the method for the Graphene/indium phosphide solar cell of above-mentioned electric field regulation and control, comprise the steps:
1) backplate is made in the one side of the N-shaped doping of cleaning or the phosphatization indium sheet of p-type doping;
2) the phosphatization indium sheet of step 1) process is carried out in chemical solution cleaning and remove surface impurity, take out and drying;
3) Graphene is transferred to step 2) on the another side of gained phosphatization indium sheet, phosphatization indium sheet obtains graphene layer;
4) on graphene layer, front electrode is made, and the area of reserved growth insulating medium layer;
5) on graphene layer, reserved area place makes insulating medium layer;
6) on insulating medium layer, grid is made.
In technique scheme, step 2) in chemical solution be the mixed solution of one or more in ammoniacal liquor or ethanol, acetone, isopropyl alcohol, hydrochloric acid, sulfuric acid and hydrogen peroxide.
The beneficial effect that the present invention has compared with background technology is:
Electric field regulation and control Graphene/indium phosphide solar cell of the present invention can regulate the fermi level position of Graphene by extra electric field, namely by the doping characteristic of electric field controls Graphene, thus change the barrier potential difference of Graphene/heterojunction of indium phosphide, and then regulate the electricity conversion of Graphene/indium phosphide solar cell, obtain Graphene/indium phosphide solar cell that transformation efficiency is higher.Preparation technology of the present invention is simple, is convenient to realize.
accompanying drawing illustrates:
Fig. 1 is the structural representation of Graphene/indium phosphide solar cell;
Fig. 2 is the impacts of electric field regulation and control on Graphene/p-type indium phosphide solar cell efficiency.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
With reference to Fig. 1, Graphene/the indium phosphide solar cell of electric field regulation and control of the present invention has backplate 1, phosphorization phosphide indium layer 2, graphene layer 3, insulating medium layer 5 and grid 6 from bottom to top successively, described solar cell is also provided with front electrode 4, and front electrode 4 is arranged on graphene layer 3.
Embodiment 1
1) in the p-type doping phosphatization indium sheet one side of cleaning, electron-beam vapor deposition method deposition chromium, golden combination electrode is utilized;
2) carry out surface clean by the sample obtained immersion ethanol and acetone mixed solution, take out and drying after removing surface impurity;
3) single-layer graphene is transferred to 2) on the another side of phosphatization indium sheet that processes;
4) on above-mentioned Graphene, thermal evaporation process depositing silver electrode is utilized, and the area of reserved growth insulating medium layer;
5) electron-beam evaporation Al is passed through at above-mentioned reserved area place
2o
3film, thickness is 50nm;
6) at Al
2o
3film deposits the gold of 10nm as grid.
Electric field regulation and control on the impact of Graphene/p-type indium phosphide solar cell efficiency that this example obtains as shown in Figure 2, can find out: under positive gate voltage, battery efficiency improves with the raising of grid voltage, negative-gate voltage can cause the reduction of battery efficiency, the result shows that cell conversion efficiency effectively can be regulated by grid voltage.
Embodiment 2:
1) in the p-type doping phosphatization indium sheet one side of cleaning, electron-beam vapor deposition method titanium deposition, silver electrode composite is utilized;
2) sample obtained is immersed in the HCl aqueous solution of mass concentration 10% and carry out surface clean, take out and drying after removing surface impurity;
3) three layer graphenes are transferred to 2) on the another side of phosphatization indium sheet that processes;
4) on above-mentioned Graphene, utilize magnetron sputtering technique to deposit ITO electrode, and the area of reserved growth insulating medium layer;
5) SiO is prepared at above-mentioned reserved area place by chemical vapour deposition (CVD)
2film, thickness is 1nm;
6) at SiO
2film deposits the AZO of 10nm as grid.
Embodiment 3:
1) in the N-shaped doping phosphatization indium sheet one side of cleaning, magnetron sputtering deposition ITO electrode is utilized;
2) carry out surface clean by the sample obtained immersion ammonia spirit, take out and drying after removing surface impurity;
3) 10 layer graphenes are transferred to 2) on the another side of phosphatization indium sheet that processes;
4) evaporation palladium, golden combination electrode on above-mentioned Graphene, and the area of reserved growth insulating medium layer;
5) SiN is prepared at above-mentioned reserved area place by chemical vapor deposition method
xfilm, thickness is 100nm;
6) at SiN
xfilm shifts Graphene as grid.
Embodiment 4
1) in the N-shaped doping phosphatization indium sheet one side of cleaning, thermal evaporation titanium deposition, golden combination electrode is utilized;
2) carry out surface clean by the sample the obtained immersion concentrated sulfuric acid and hydrogen peroxide mixed solution, take out and drying after removing surface impurity;
3) 6 layer graphenes are transferred to 2) on the another side of phosphatization indium sheet that processes;
4) evaporation platinum, chromium, aluminium combination electrode on above-mentioned Graphene, and the area of reserved growth insulating medium layer;
5) 10nm thickness SiN is prepared at above-mentioned reserved area place by chemical vapor deposition method
xwith 60nm thickness SiO
2laminate film;
6) at SiO
2film deposits the ITO of 100nm as grid.
Embodiment 5
1) in the p-type doping phosphatization indium sheet one side of cleaning, magnetron sputtering deposition FTO electrode is utilized;
2) carry out surface clean by the sample obtained immersion ammonia spirit, take out and drying after removing surface impurity;
3) 4 layer graphenes are transferred to 2) on the another side of phosphatization indium sheet that processes;
4) sputtering ITO electrode on above-mentioned Graphene, and the area of reserved growth insulating medium layer;
5) totally 100 μm of thick PDMS, PMMA laminated films are prepared at above-mentioned reserved area place by spin coating proceeding;
6) on laminated film, the titanium of 80nm, silver electrode composite is deposited as grid.
Claims (9)
1. Graphene/the indium phosphide solar cell of electric field regulation and control, it is characterized in that there be phosphorization phosphide indium layer (2), graphene layer (3), insulating medium layer (5) and the grid (6) that backplate (1), N-shaped adulterate or p-type is adulterated from bottom to top successively, described solar cell is also provided with front electrode (4), and front electrode (4) is arranged on graphene layer (3).
2. Graphene/the indium phosphide solar cell of electric field regulation and control according to claim 1, is characterized in that the Graphene in described graphene layer (3) is 1-10 layer.
3. Graphene/the indium phosphide solar cell of electric field regulation and control according to claim 1, is characterized in that described insulating medium layer (5) is Al
2o
3, SiO
2, SiN
x, TiO
2, SiC, SiON, HfO
2, the lamination of one or more in AlN, PDMS, PMMA, PET, PC, PS and boron nitride.
4. Graphene/the indium phosphide solar cell of electric field regulation and control according to claim 1, is characterized in that the thickness of described insulating medium layer (5) is 1nm-100 μm.
5. Graphene/the indium phosphide solar cell of electric field regulation and control according to claim 1, is characterized in that described backplate (1) is one or several the combination electrode in gold, palladium, silver, titanium, platinum, chromium, nickel, ITO, FTO and AZO.
6. Graphene/the indium phosphide solar cell of electric field regulation and control according to claim 1, is characterized in that described front electrode (4) is one or several the combination electrode in gold, palladium, silver, titanium, copper, platinum, chromium, aluminium, ITO, FTO and AZO.
7. Graphene/the indium phosphide solar cell of electric field regulation and control according to claim 1, is characterized in that described grid (6) is one or several the combination electrode in gold, palladium, silver, titanium, chromium, nickel, Graphene, AZO, ITO and FTO.
8. the method for the Graphene/indium phosphide solar cell of the electric field regulation and control of preparation as described in any one of claim 1-7, is characterized in that comprising the steps:
1) backplate (1) is made in the one side of the N-shaped doping of cleaning or the phosphatization indium sheet (2) of p-type doping;
2) the phosphatization indium sheet of step 1) process is carried out in chemical solution cleaning and remove surface impurity, take out and drying;
3) Graphene is transferred to step 2) on the another side of gained phosphatization indium sheet, phosphatization indium sheet obtains graphene layer (3);
4) on graphene layer (3), front electrode (4) is made, and the area of reserved growth insulating medium layer (5);
5) insulating medium layer (5) is made at the upper reserved area place of graphene layer (3);
6) on insulating medium layer (5), grid (6) is made.
9. the preparation method of the Graphene/indium phosphide solar cell of electric field according to claim 8 regulation and control, is characterized in that step 2) described in chemical solution be the mixed solution of one or more in ammoniacal liquor or ethanol, acetone, isopropyl alcohol, hydrochloric acid, sulfuric acid and hydrogen peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510162547.6A CN104851935B (en) | 2015-04-08 | 2015-04-08 | A kind of Graphene/indium phosphide solar cell of electric field regulation and control and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510162547.6A CN104851935B (en) | 2015-04-08 | 2015-04-08 | A kind of Graphene/indium phosphide solar cell of electric field regulation and control and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN104851935A true CN104851935A (en) | 2015-08-19 |
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| WO2018058381A1 (en) * | 2016-09-28 | 2018-04-05 | 华为技术有限公司 | Transparent electrode, preparation method therefor, display panel, and solar cell |
| CN109273551A (en) * | 2018-09-11 | 2019-01-25 | 浙江大学 | A kind of graphene/GaInP ties heterogeneous solar battery and preparation method thereof more |
| CN109786482A (en) * | 2018-12-13 | 2019-05-21 | 华南理工大学 | A kind of schottky junction solar cell and preparation method thereof comprising electron transfer layer |
| CN110571289A (en) * | 2019-09-23 | 2019-12-13 | 华南理工大学 | InP-graphene solar cell and preparation method thereof |
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| JP5627390B2 (en) * | 2010-10-22 | 2014-11-19 | 株式会社東芝 | Photoelectric conversion element and manufacturing method thereof |
| JP2013058599A (en) * | 2011-09-08 | 2013-03-28 | Sumitomo Chemical Co Ltd | Electrode for organic semiconductor element and method for manufacturing the same |
| KR101376732B1 (en) * | 2012-09-19 | 2014-04-07 | 전자부품연구원 | Transparent electronic devices having 2D transition metal dichalcogenides with multi-layers, optoelectronic device, and transistor device |
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| WO2018058381A1 (en) * | 2016-09-28 | 2018-04-05 | 华为技术有限公司 | Transparent electrode, preparation method therefor, display panel, and solar cell |
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| CN110571289A (en) * | 2019-09-23 | 2019-12-13 | 华南理工大学 | InP-graphene solar cell and preparation method thereof |
| CN110571289B (en) * | 2019-09-23 | 2024-05-10 | 华南理工大学 | InP-graphene solar cell and preparation method thereof |
| CN111755534A (en) * | 2020-06-10 | 2020-10-09 | 浙江大学 | Graphene/semiconductor built-in electric field regulated PN junction solar cell and preparation method thereof |
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