CN107190247B - A kind of preparation method of solar battery PECVD multilayer passivated reflection reducing membrane - Google Patents
A kind of preparation method of solar battery PECVD multilayer passivated reflection reducing membrane Download PDFInfo
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- CN107190247B CN107190247B CN201710469078.1A CN201710469078A CN107190247B CN 107190247 B CN107190247 B CN 107190247B CN 201710469078 A CN201710469078 A CN 201710469078A CN 107190247 B CN107190247 B CN 107190247B
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 56
- 239000012528 membrane Substances 0.000 title claims abstract description 8
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 76
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 76
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 67
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 67
- 229910021529 ammonia Inorganic materials 0.000 claims description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims description 38
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 18
- 229910000077 silane Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- -1 silicon Alkane Chemical class 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000003667 anti-reflective effect Effects 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 230000032900 absorption of visible light Effects 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention designs area of solar cell, the preparation method of specifically a kind of solar battery PECVD multilayer passivated reflection reducing membrane.A kind of preparation method of solar battery PECVD multilayer passivated reflection reducing membrane has plated six layers of SiNx film under the premise of not changing overall refractive index, film is from inside to outside, refractive index is successively successively decreased, and to further improve the absorption of visible light, reaches better anti-reflective effect.And a pre-cleaning is added before each plated film, pre-cleaning main function is to use NH3In H ion be passivated silicon chip surface, substitutional impurity, pre-cleaning can effectively reduce the pollution in coating process before each plated film, and generate purer SiNxFilm effectively prevent silver paste after sintering that the impurity in SiNx film burnt PN junction, so that short circuit current be made to be greatly improved.
Description
Technical field
The present invention designs area of solar cell, the system of specifically a kind of solar battery PECVD multilayer passivated reflection reducing membrane
Preparation Method.
Background technique
Pecvd process is to plate one layer of navy blue silicon nitride film in silicon chip surface, to fully absorb sunlight, is dropped
Low reflection, and silicon nitride film plays the role of passivation, protects cell piece not contaminated.In order to improve crystal silicon solar energy battery
Efficiency, it usually needs outside the reflection for reducing solar cell front surface, it is also necessary to processing is passivated to surface of crystalline silicon, to reduce
Compound action of the surface defect for minority carrier.
Summary of the invention
The technical problems to be solved by the present invention are: how to provide a kind of solar battery PECVD multilayer passivated reflection reducing membrane
Preparation method, better anti-reflective effect.
The technical scheme adopted by the invention is that: a kind of preparation method of solar battery PECVD multilayer passivated reflection reducing membrane,
It is carried out according to following step
Step 1: being aoxidized using ozone generating machine to the crystalline silicon after cleaning and texturing, diffusion, etching, ozone
Flow set is 500-1000L/h；
Step 2: after carrying out first time pre-cleaning on silicon oxide film using PECVD, using PECVD in silica
The first silicon nitride film is made on film, wherein nitrogen flow is 3-10L/min, ammonia flow 3-6L/min, silane flow rate are
1450-1500ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, time 20-60s, treatment temperature are
350-450℃；
Step 2: being existed after carrying out second of pre-cleaning on first layer silicon nitride film using PECVD using PECVD
On first layer silicon nitride film make second layer silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/
Min, silane flow rate 1350-1450ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, time 20-
50s, treatment temperature are 350-450 DEG C；
Step 3: being existed after carrying out third time pre-cleaning on second layer silicon nitride film using PECVD using PECVD
On second layer silicon nitride film make third layer silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/
Min, silane flow rate 1300-1350ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, time 20-
50s, treatment temperature are 350-450 DEG C；
Step 4: being existed after carrying out the 4th pre-cleaning on third layer silicon nitride film using PECVD using PECVD
On third layer silicon nitride film make the 4th layer of silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/
Min, silane flow rate 1250-1300ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, time 20-
50s, treatment temperature are 350-450 DEG C；
Step 5: being existed after carrying out the 5th pre-cleaning on the 4th layer of silicon nitride film using PECVD using PECVD
On 4th layer of silicon nitride film make layer 5 silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/
Min, silane flow rate 1200-1250ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, time 20-
50s, treatment temperature are 350-450 DEG C；
Step 6: being existed after carrying out the 6th pre-cleaning on layer 5 silicon nitride film using PECVD using PECVD
On layer 5 silicon nitride film make layer 6 silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/
Min, silane flow rate 1200-1250ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, time 20-
50s, treatment temperature are 350-450 DEG C.
As a kind of preferred embodiment: in each pre-cleaning, nitrogen flow 3-10L/min, ammonia flow 3-10L/
Min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, treatment temperature are 350-450 DEG C.
This patent method silicon oxide film with a thickness of 1-10nm, first layer silicon nitride film is with a thickness of 15-20nm, refractive index
For 2.0-2.5, second layer silicon nitride film with a thickness of 10-15nm, refractive index 1.9-2.4, the thickness of third layer silicon nitride film
It is layer silicon nitride film of 10-15nm, refractive index 1.5-2.0, the 4th with a thickness of 15-20nm, refractive index 1.3-1.9, layer 5
Silicon nitride film with a thickness of 15-25nm, refractive index 1.3-1.8, layer 6 silicon nitride film with a thickness of 15-25nm, refractive index
For 1.2-1.7.
The beneficial effects of the present invention are: having plated six layers of SiNx film, film under the premise of not changing overall refractive index
From inside to outside, refractive index is successively successively decreased, and to further improve the absorption of visible light, reaches better anti-reflective effect.And
A pre-cleaning is added before each plated film, pre-cleaning main function is to use NH3In H ion be passivated silicon chip surface, substitutional impurity,
Pre-cleaning can effectively reduce the pollution in coating process before each plated film, and generate purer SiNxFilm, it is effectively anti-
The impurity in SiNx film was burnt PN junction by silver paste after being only sintered, so that short circuit current be made to be greatly improved.
Specific embodiment
Embodiment 1
1, the crystalline silicon after cleaning and texturing, diffusion, etching is aoxidized using ozone generating machine, ozone flow is set
It is set to 500-1000L/h；
2, first time pre-cleaning is carried out on silicon oxide film using PECVD, wherein nitrogen flow is 3-10L/min, ammonia
Throughput is 3-10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 8-15s, and treatment temperature is
350-450℃；The first silicon nitride film is made on silicon oxide film using PECVD, wherein nitrogen flow is 3-10L/min, ammonia
Throughput is 3-6L/min, silane flow rate 1460ml/min, pressure 1000-2000mTorr, radio-frequency power 5k-8kwatt, when
Between 20-60s, treatment temperature be 350-450 DEG C；
3, second of pre-cleaning is carried out on first layer silicon nitride film using PECVD, wherein nitrogen flow is 3-10L/
Min, ammonia flow 3-10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, place
Managing temperature is 350-450 DEG C；Second layer silicon nitride film is made on first layer silicon nitride film using PECVD, wherein nitrogen stream
Amount is 3-10L/min, ammonia flow 3-6L/min, silane flow rate 1360ml/min, and pressure 1000-2000mTorr is penetrated
Frequency power 5k-8kwatt, time 20-50s, treatment temperature is 350-450 DEG C；
4, third time pre-cleaning is carried out on second layer silicon nitride film using PECVD, wherein nitrogen flow is 3-10L/
Min, ammonia flow 3-10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, place
Managing temperature is 350-450 DEG C；Third layer silicon nitride film is made on second layer silicon nitride film using PECVD, wherein nitrogen stream
Amount is 3-10L/min, ammonia flow 3-6L/min, silane flow rate 1320ml/min, and pressure 1000-2000mTorr is penetrated
Frequency power 5k-8kwatt, time 20-50s, treatment temperature is 350-450 DEG C；
5, the 4th pre-cleaning is carried out on third layer silicon nitride film using PECVD, wherein nitrogen flow is 3-10L/
Min, ammonia flow 3-10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, place
Managing temperature is 350-450 DEG C；The 4th layer of silicon nitride film is made on third layer silicon nitride film using PECVD, wherein nitrogen stream
Amount is 3-10L/min, ammonia flow 3-6L/min, silane flow rate 1280ml/min, and pressure 1000-2000mTorr is penetrated
Frequency power 5k-8kwatt, time 30-80s, treatment temperature is 350-450 DEG C；
6, the 5th pre-cleaning is carried out on the 4th layer of silicon nitride film using PECVD, wherein nitrogen flow is 3-10L/
Min, ammonia flow 3-10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, place
Managing temperature is 350-450 DEG C；Layer 5 silicon nitride film is made on the 4th layer of silicon nitride film using PECVD, wherein nitrogen stream
Amount is 3-10L/min, ammonia flow 3-6L/min, silane flow rate 1230ml/min, and pressure 1000-2000mTorr is penetrated
Frequency power 5k-8kwatt, time 50-100s, treatment temperature is 350-450 DEG C；
7, the 6th pre-cleaning is carried out on layer 5 silicon nitride film using PECVD, wherein nitrogen flow is 3-10L/
Min, ammonia flow 3-10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, place
Managing temperature is 350-450 DEG C；Layer 6 silicon nitride film is made on layer 5 silicon nitride film using PECVD, wherein nitrogen stream
Amount is 3-10L/min, ammonia flow 3-6L/min, silane flow rate 1000ml/min, and pressure 1000-2000mTorr is penetrated
Frequency power 5k-8kwatt, time 50-100s, treatment temperature is 350-450 DEG C.
Embodiment 2
1, the crystalline silicon after cleaning and texturing, diffusion, etching is aoxidized using ozone generating machine, ozone flow is set
It is set to 8000L/h；
2, first time pre-cleaning is carried out on silicon oxide film using PECVD, wherein nitrogen flow is 8L/min, ammonia
Flow is 8L/min, pressure 2000mTorr, radio-frequency power 8kw, and duration 10s, treatment temperature is 350 DEG C；It uses
PECVD makes the first silicon nitride film on silicon oxide film, wherein nitrogen flow be 7L/min, ammonia flow 5L/min, silicon
Alkane flow is 1480ml/min, pressure 1560mTorr, radio-frequency power 8kwatt, and time 30s, treatment temperature is 450 DEG C；
3, second of pre-cleaning is carried out on first layer silicon nitride film using PECVD, wherein nitrogen flow is 8L/
Min, ammonia flow 8L/min, pressure 2000mTorr, radio-frequency power 8kw, duration 10s, treatment temperature 350
℃；The first silicon nitride film is made on silicon oxide film using PECVD, wherein nitrogen flow is 7L/min, ammonia flow is
5L/min, silane flow rate 1380ml/min, pressure 1560mTorr, radio-frequency power 8kwatt, time 30s, treatment temperature are
450℃；
4, third time pre-cleaning is carried out on second layer silicon nitride film using PECVD, wherein nitrogen flow is 8L/
Min, ammonia flow 8L/min, pressure 2000mTorr, radio-frequency power 8kw, duration 10s, treatment temperature 350
℃；The first silicon nitride film is made on silicon oxide film using PECVD, wherein nitrogen flow is 7L/min, ammonia flow is
5L/min, silane flow rate 1320ml/min, pressure 1560mTorr, radio-frequency power 8kwatt, time 30s, treatment temperature are
450℃；
5, the 4th pre-cleaning is carried out on third layer silicon nitride film using PECVD, wherein nitrogen flow is 8L/
Min, ammonia flow 8L/min, pressure 2000mTorr, radio-frequency power 8kw, duration 10s, treatment temperature 350
℃；The first silicon nitride film is made on silicon oxide film using PECVD, wherein nitrogen flow is 7L/min, ammonia flow is
5L/min, silane flow rate 1480ml/min, pressure 1260mTorr, radio-frequency power 8kwatt, time 30s, treatment temperature are
450℃；
6, the 5th pre-cleaning is carried out on the 4th layer of silicon nitride film using PECVD, wherein nitrogen flow is 8L/
Min, ammonia flow 8L/min, pressure 2000mTorr, radio-frequency power 8kw, duration 10s, treatment temperature 350
℃；The first silicon nitride film is made on silicon oxide film using PECVD, wherein nitrogen flow is 7L/min, ammonia flow is
5L/min, silane flow rate 1480ml/min, pressure 1210mTorr, radio-frequency power 8kwatt, time 30s, treatment temperature are
450℃；
7, the 6th pre-cleaning is carried out on layer 5 silicon nitride film using PECVD, wherein nitrogen flow is 8L/
Min, ammonia flow 8L/min, pressure 2000mTorr, radio-frequency power 8kw, duration 10s, treatment temperature 350
℃；The first silicon nitride film is made on silicon oxide film using PECVD, wherein nitrogen flow is 7L/min, ammonia flow is
5L/min, silane flow rate 1480ml/min, pressure 1000mTorr, radio-frequency power 8kwatt, time 30s, treatment temperature are
450℃。
Claims (1)
1. a kind of preparation method of solar battery PECVD multilayer passivated reflection reducing membrane, it is characterised in that: according to following step into
Row
Step 1: being aoxidized using ozone generating machine to the crystalline silicon after cleaning and texturing, diffusion, etching, ozone flow
It is set as 500-1000L/h；
Step 2: after carrying out first time pre-cleaning on silicon oxide film using PECVD, using PECVD on silicon oxide film
Make the first silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/min, silane flow rate 1450-
1500ml/min, pressure 1000-2000mTorr, radio-frequency power 5kw-8kw, time 20-60s, treatment temperature 350-450
℃ ；
Step 2: after carrying out second of pre-cleaning on first layer silicon nitride film using PECVD, using PECVD first
Layer silicon nitride film on make second layer silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/min, silicon
Alkane flow is 1350-1450ml/min, pressure 1000-2000mTorr, radio-frequency power 5kw-8kw, time 20-50s, processing temperature
Degree is 350-450 DEG C；
Step 3: after carrying out third time pre-cleaning on second layer silicon nitride film using PECVD, using PECVD second
Layer silicon nitride film on make third layer silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/min, silicon
Alkane flow is 1300-1350ml/min, pressure 1000-2000mTorr, radio-frequency power 5kw-8kw, time 20-50s, processing temperature
Degree is 350-450 DEG C；
Step 4: after carrying out the 4th pre-cleaning on third layer silicon nitride film using PECVD, using PECVD in third
Layer silicon nitride film on make the 4th layer of silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/min, silicon
Alkane flow is 1250-1300ml/min, pressure 1000-2000mTorr, radio-frequency power 5kw-8kw, time 20-50s, processing temperature
Degree is 350-450 DEG C；
Step 5: after carrying out the 5th pre-cleaning on the 4th layer of silicon nitride film using PECVD, using PECVD the 4th
Layer silicon nitride film on make layer 5 silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/min, silicon
Alkane flow is 1200-1250ml/min, pressure 1000-2000mTorr, radio-frequency power 5kw-8kw, time 20-50s, processing temperature
Degree is 350-450 DEG C；
Step 6: after carrying out the 6th pre-cleaning on layer 5 silicon nitride film using PECVD, using PECVD the 5th
Layer silicon nitride film on make layer 6 silicon nitride film, wherein nitrogen flow be 3-10L/min, ammonia flow 3-6L/min, silicon
Alkane flow is 500-1200ml/min, pressure 1000-2000mTorr, radio-frequency power 5kw-8kw, time 20-50s, processing temperature
Degree is 350-450 DEG C, in each pre-cleaning of step 1 to step 6, nitrogen flow 3-10L/min, ammonia flow 3-
10L/min, pressure 1000-2000mTorr, radio-frequency power 6-8kw, duration 10-20s, treatment temperature 350-450
℃ 。
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| CN108767056B (en) * | 2018-05-02 | 2020-05-15 | 江西展宇新能源股份有限公司 | Hydrogen-rich PECVD process method for enhancing hydrogen passivation capability of solar cell |
| CN109830570A (en) * | 2019-02-22 | 2019-05-31 | 河南林鑫新能源科技有限公司 | A kind of passivation film and preparation method thereof |
| CN112635619A (en) * | 2020-12-21 | 2021-04-09 | 韩华新能源（启东）有限公司 | Plasma processing method of crystalline silicon solar cell multilayer film and solar cell |
| CN113293358A (en) * | 2021-04-20 | 2021-08-24 | 山西潞安太阳能科技有限责任公司 | Preparation method for improving passivation effect of aluminum oxide back film by PECVD (plasma enhanced chemical vapor deposition) |
| CN114284368A (en) * | 2021-12-17 | 2022-04-05 | 通合新能源(金堂)有限公司 | Film coating process of solar cell |
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| US9831069B2 (en) * | 2011-06-03 | 2017-11-28 | Wacom | CVD apparatus and method for forming CVD film |
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| CN107190247A (en) | 2017-09-22 |
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Effective date of registration: 20190709 Address after: 046000 Zhangze New Industrial Park in the Suburb of Changzhi City, Shanxi Province Patentee after: Shanxi Lusunshine Volt Technology Co., Ltd. Address before: 046000 Zhangze New Industrial Park in the Suburb of Changzhi City, Shanxi Province Patentee before: Shanxi Lu'an Solar Energy Technology Co., Ltd. |