CN105161547A - Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell - Google Patents
Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell Download PDFInfo
- Publication number
- CN105161547A CN105161547A CN201510559052.7A CN201510559052A CN105161547A CN 105161547 A CN105161547 A CN 105161547A CN 201510559052 A CN201510559052 A CN 201510559052A CN 105161547 A CN105161547 A CN 105161547A
- Authority
- CN
- China
- Prior art keywords
- layer
- oxide layer
- silicon oxide
- silicon
- stack membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 98
- 239000010703 silicon Substances 0.000 claims abstract description 98
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 66
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000012528 membrane Substances 0.000 claims description 60
- 238000000151 deposition Methods 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 45
- 230000008021 deposition Effects 0.000 claims description 40
- 238000002360 preparation method Methods 0.000 claims description 25
- 238000007254 oxidation reaction Methods 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 18
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 15
- 210000002268 wool Anatomy 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- 235000008216 herbs Nutrition 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 18
- 229920005591 polysilicon Polymers 0.000 abstract description 18
- 238000002161 passivation Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 15
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 64
- 238000000034 method Methods 0.000 description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 239000004332 silver Substances 0.000 description 22
- 229910052709 silver Inorganic materials 0.000 description 22
- 238000007639 printing Methods 0.000 description 18
- 235000010210 aluminium Nutrition 0.000 description 17
- 238000005245 sintering Methods 0.000 description 16
- 229910004205 SiNX Inorganic materials 0.000 description 14
- 238000004062 sedimentation Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000004411 aluminium Substances 0.000 description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 12
- 238000007650 screen-printing Methods 0.000 description 12
- 239000002002 slurry Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 230000035484 reaction time Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000006557 surface reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a stack film for a back passivated solar cell. The stack film comprises a first silicon oxide layer, a second silicon oxide layer, a silicon nitride layer and a third silicon oxide layer, wherein are sequentially compounded on the surface of a silicon wafer. According to the four-layer stack film for the back passivated solar cell provided by the invention, the passivation effect and the internal reflection effect can be strengthened; the open-circuit voltage and the short-circuit current of the solar cell are improved; the solar cell conversion efficiency is improved; the stack film is simple in implementation mode; the production cost of the back passivated solar cell can be reduced; and the stack film is suitable for large-scale production. The result shows that the conversion efficiency of a P-type polysilicon back passivated solar cell manufactured by the stack film for the back passivated solar cell provided by the invention is greater than 19%; the open-circuit voltage is greater than or equal to 645mV; and the short-circuit current is greater than or equal to 37.69mA/cm<2>.
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to a kind of for lamination carrying on the back passivating solar battery and preparation method thereof and a kind of back of the body passivating solar battery.
Background technology
The conversion efficiency how improving p-type silicon solar cell has become the core content of photovoltaic Corporation R & D, and wherein carrying on the back passivating solar battery technology is the important means realizing high-efficiency battery.Back of the body passivating solar battery technology changes back side battery structure, uses high-quality back side rete to replace conventional aluminium back surface field, and the technical advantage of back of the body passivating solar battery is to reduce the compound of efficient carrier at battery back surface, promotes open circuit voltage; And back side rete can increase internal reflection, promote short circuit current, thus improve battery efficiency.Carry on the back during passivating solar battery is produced the back side rete used at present on the market on a large scale and be generally AlO
xand SiN
xcomposite film structure, wherein SiN
xat top layer.Although this film layer structure possesses good passivation effect and back side internal reflection effect, AlO
ximplementation be difficult point always.On the one hand, for the preparation of AlO
xequipment very expensive, the ALD of usual needs specialty or special PECVD device, these equipment up-front investments are very high, and cause the production cost carrying on the back passivating solar battery significantly to rise, the rising of this cost at present directly counteracts because battery efficiency improves the income brought; Another importance is, depositing Al O
xraw material needed for layer are trimethyl aluminiums, and trimethyl aluminium is a kind of extremely inflammable and explosive material, run into air or water all can burn rapidly, in use be all great potential safety hazard in storing process.Therefore, the film layer structure that continual exploitation is new, reduces costs while taking into account effect.
Chinese patent CN201410854107.2 proposes a kind of method that PECVD of employing prepares solar energy back of the body passivation cell back of the body passivation film, and it is SiO that this invention adopts PECVD to prepare bottom
xlayer, top layer is SiN
xlayer, SiN
xlayer can be individual layer SiN
x, also can be the multilayer SiN of different refractivity
x.Although this solar energy back of the body passivation cell back of the body passivation film decreases up-front investment, and eliminates the potential safety hazard of use and storage process, passivation effect is poor.
Chinese patent CN201410526453.8 proposes a kind of preparation method of crystal silicon solar battery passivating film, Chinese patent CN201410854107.2 patent basis compensate for the deficiency with the SiOx passivation effect adopting PECVD to prepare, the method adopts the method for PECVD to lead to hydrogen to the silicon chip after wet etching, then passes into silane while glow discharge and carbon dioxide deposits one deck SiO
xfilm, then deposit layer of sin
xfilm.According to the described deduction of this invention, the object of logical hydrogen is to strengthen H surface passivation, but adopts the limited efficiency of this reinforcement H passivation; In addition, the method is mainly applied in solar cell front, SiO
xfilm and SiN
xthe design of membrane structure is while consideration passivation effect, and emphasis considers the anti-reflective effect to light, but the back side internal reflection effect of back of the body passivation cell is poor.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of stack membrane for carrying on the back passivating solar battery, the stack membrane of back of the body passivating solar battery provided by the invention can strengthen passivation effect and internal reflection effect, improve open circuit voltage and the short circuit current of solar cell, improve solar cell conversion efficiency.
The invention provides a kind of stack membrane for carrying on the back passivating solar battery, comprising the first silicon oxide layer, the second silicon oxide layer, silicon nitride layer and the 3rd silicon oxide layer that are compound in silicon chip surface successively.
Preferably, the thickness of described first silicon oxide layer is 0.5 ~ 5nm, and refractive index is 1.46 ~ 1.8.
Preferably, the thickness of described second silicon oxide layer is 5 ~ 40nm, and refractive index is 1.46 ~ 1.8.
Preferably, described silicon nitride layer serves as reasons >=and the silicon nitride film of 1 layer is composited, and the thickness of described silicon nitride layer is 20 ~ 100nm, and refractive index is 1.9 ~ 2.3.
Preferably, the thickness of described 3rd silicon oxide layer is 20 ~ 100nm, and refractive index is 1.46 ~ 1.8.
Present invention also offers a kind of preparation method of the stack membrane for carrying on the back passivating solar battery, comprising the following steps:
A) at surface treated silicon chip surface oxidation formation first silicon oxide layer;
B) at described first silicon oxide layer surface deposition second silicon oxide layer;
C) at described second silicon oxide layer surface deposition silicon nitride layer;
D) at described silicon nitride layer surface deposition the 3rd silicon oxide layer, the stack membrane for carrying on the back passivating solar battery is obtained.
Preferably, steps A) be specially:
Oxygen-containing gas carries out oxidation reaction at surface treated silicon chip surface, obtains the first silicon oxide layer, and described oxygen-containing gas is selected from steam, oxygen, ozone, CO
2or N
2o;
Step B) be specially:
By SiH
4pass into depositing device with oxygen-containing gas, carry out deposition reaction on the first silicon oxide layer surface, obtain the second silicon oxide layer, described oxygen-containing gas is selected from N
2o or CO
2;
Step C) be specially:
By SiH
4and NH
3pass into depositing device, carry out deposition reaction at described second silicon oxide layer, obtain silicon nitride layer;
Step D) be specially:
By SiH
4pass into depositing device with oxygen-containing gas, carry out deposition reaction on described silicon nitride layer surface, obtain the 3rd silicon oxide layer, described oxygen-containing gas is selected from N
2o or CO
2.
Preferably, steps A) in, described in be oxidized to thermal oxidation, plasma oxidation or ozone oxidation; Step B) in, adopt Tubular PECVD device or board-like PECVD device to deposit; Step C) in, adopt Tubular PECVD device or board-like PECVD device to deposit; Step D) in, adopt Tubular PECVD device or board-like PECVD device to deposit; .
Preferably, described surface treated silicon chip is successively through the silicon chip of making herbs into wool, diffusion, etching and front coating process.
Preferably, the thickness of described first silicon oxide layer is 0.5 ~ 5nm, and refractive index is 1.46 ~ 1.8;
The thickness of described second silicon oxide layer is 5 ~ 40nm, and refractive index is 1.46 ~ 1.8;
Described silicon nitride layer serves as reasons >=and the silicon nitride film of 1 layer is composited, and the thickness of described silicon nitride layer is 20 ~ 100nm, and refractive index is 1.9 ~ 2.3;
The thickness of described 3rd silicon oxide layer is 20 ~ 100nm, and refractive index is 1.46 ~ 1.8.
Present invention also offers a kind of back of the body passivating solar battery, comprising:
Backplate, back surface field, stack membrane, local aluminum back surface field, P-type silicon sheet, N-type emitter, passivating film and front electrode;
Described backplate, back surface field, stack membrane, local aluminum back surface field, P-type silicon sheet, N-type emitter, passivating film are connected from bottom to up successively with front electrode;
Described stack membrane is the stack membrane for carrying on the back passivating solar battery that above-mentioned stack membrane for carrying on the back passivating solar battery or above-mentioned preparation method prepare.
Compared with prior art, the invention provides a kind of stack membrane for carrying on the back passivating solar battery, comprising the first silicon oxide layer, the second silicon oxide layer, silicon nitride layer and the 3rd silicon oxide layer that are compound in silicon chip surface successively.Four stacked tunics of back of the body passivating solar battery provided by the invention can strengthen passivation effect and internal reflection effect, improve open circuit voltage and the short circuit current of solar cell, improve solar cell conversion efficiency.This stack membrane implementation is simple, can reduce the production cost of back of the body passivating solar battery, be suitable for large-scale production.
Result shows, adopt the conversion efficiency of the P type polysilicon back passivating solar battery prepared for the stack membrane carrying on the back passivating solar battery provided by the invention to reach more than 19%, open circuit voltage is more than or equal to 645mV, and short circuit current is more than or equal to 37.69mA/cm
2.
Accompanying drawing explanation
Fig. 1 is the structural representation of the stack membrane for carrying on the back passivating solar battery provided by the invention;
Fig. 2 is the process chart of the stack membrane for the preparation of back of the body passivating solar battery provided by the invention.
Embodiment
The invention provides a kind of stack membrane for carrying on the back passivating solar battery, comprising the first silicon oxide layer, the second silicon oxide layer, silicon nitride layer and the 3rd silicon oxide layer that are compound in silicon chip surface successively.
The concrete structure of the stack membrane for carrying on the back passivating solar battery provided by the invention is shown in Fig. 1, Fig. 1 is the structural representation of the stack membrane for carrying on the back passivating solar battery provided by the invention, wherein, 101 is the first silicon oxide layer, 102 is the second silicon oxide layer, 103 is silicon nitride layer, and 104 is the 3rd silicon oxide layer.1 is the stack membrane for carrying on the back passivating solar battery, and 2 is surface treated silicon chip.101,102,103 and 104 the stack membrane 1 for carrying on the back passivating solar battery is compounded to form.
Stack membrane for carrying on the back passivating solar battery provided by the invention comprises the first silicon oxide layer being compound in silicon chip surface, i.e. a SiO
xlayer.In the present invention, a described SiO
xlayer prepares by carrying out oxidation reaction at silicon chip surface.A described SiO
xlayer is mainly used in the back surface passivation of solar cell.Wherein, a described SiO
xthe thickness of layer is preferably 0.5 ~ 5nm, is more preferably 1 ~ 4nm; A described SiO
xthe refractive index of layer is 1.46 ~ 1.8, is preferably 1.5 ~ 1.7.
Stack membrane for carrying on the back passivating solar battery provided by the invention also comprises and is compound in a described SiO
xsecond silicon oxide layer of layer, i.e. the 2nd SiO
xlayer.In the present invention, described 2nd SiO
xlayer preferably using plasma enhancing chemical vapour deposition technique (PECVD) is prepared from.Wherein, described 2nd SiO
xthe thickness of layer is preferably 5 ~ 40nm, and be more preferably 15 ~ 35nm, the refractive index of described 2nd SiOx layer is 1.46 ~ 1.8, is preferably 1.5 ~ 1.7.
Stack membrane for carrying on the back passivating solar battery provided by the invention also comprises and is compound in described 2nd SiO
xthe silicon nitride layer of layer, i.e. SiN
xlayer.In the present invention, described SiN
xlayer preferably using plasma enhancing chemical vapour deposition technique (PECVD) is prepared from.Described SiN
xlayer serves as reasons>=and the silicon nitride film of 1 layer is composited.In embodiments more of the present invention, described SiN
xlayer is the silicon nitride film of 1 layer; In other embodiments of the present invention, described SiN
xlayer is for be composited by 2 layers of silicon nitride film; In other embodiments of the present invention, described SiN
xlayer is for be composited by 3 layers of silicon nitride film.Described SiN
xthe thickness of layer is preferably 20 ~ 100nm, is more preferably 40 ~ 80nm; Described SiN
xthe refractive index of layer is preferably 1.9 ~ 2.3, is more preferably 2.0 ~ 2.2.
Stack membrane for carrying on the back passivating solar battery provided by the invention also comprises and is compound in described SiN
xthe 3rd silicon oxide layer, i.e. SiO
xlayer, in the present invention, described Three S's iO
xlayer preferably using plasma enhancing chemical vapour deposition technique (PECVD) is prepared from.Described Three S's iO
xthe thickness of layer is preferably 20 ~ 100nm, is more preferably 40 ~ 80nm, described Three S's iO
xthe refractive index of layer is preferably 1.46 ~ 1.8, is more preferably 1.5 ~ 1.7.
Present invention also offers a kind of preparation method of the stack membrane for carrying on the back passivating solar battery, comprising the following steps:
A) at surface treated silicon chip surface oxidation formation first silicon oxide layer;
B) at described first silicon oxide layer surface deposition second silicon oxide layer;
C) at described second silicon oxide layer surface deposition silicon nitride layer;
D) at described silicon nitride layer surface deposition the 3rd silicon oxide layer, the stack membrane for carrying on the back passivating solar battery is obtained.
The present invention is first at surface treated silicon chip surface oxidation formation the one SiO
xlayer, wherein, the silicon chip that the present invention selects is polysilicon chip, is more preferably P type polysilicon chip.The resistivity of described polysilicon chip is preferably 0.5 ~ 3 Ω cm, and thickness is preferably 160 ~ 220 μm.The present invention, before the stack membrane for the preparation of back of the body passivating solar battery, needs to carry out surface treatment to described silicon chip, and described surface treated silicon chip is successively through the silicon chip of making herbs into wool, diffusion, etching and front coating process.The concrete grammar of the present invention to the technique of described silicon wafer wool making, diffusion, etching and front plated film does not have particular restriction, well known to a person skilled in the art the technique of making herbs into wool, diffusion, etching and front plated film.
In the present invention, described making herbs into wool is preferably carried out as follows:
Adopt wet chemical etching process to carry out texturing at front side of silicon wafer and the back side, i.e. making herbs into wool simultaneously.Described texturing solution is preferably volume ratio for (1 ~ 2): (0.5 ~ 1): the mixed solution of the nitric acid of 1, hydrofluoric acid and deionized water, the temperature of described making herbs into wool is preferably 5 ~ 15 DEG C.After acid making herbs into wool, must arrive the silicon chip that front has bowl configurations, wherein, described bowl configurations is anti-reflection structure.
Spread by silicon chip after making herbs into wool, in the present invention, described diffusion is preferably carried out as follows:
The silicon chip surface of phosphorus oxychloride liquid source after making herbs into wool is utilized to carry out tubular type diffusion, wherein, described phosphorus oxychloride liquid source is carried by nitrogen, the nitrogen carrying phosphorus oxychloride be 700 ~ 1200 milliliters per minute, oxygen 300 ~ 800 milliliters is per minute, pass into another road nitrogen is 10 Liter Per Minutes simultaneously, and pressure is 0 ~ 100Pa.After diffusion, the square resistance of described silicon chip is at 60 ~ 120 Ω/, and junction depth is at 0.2 ~ 0.5 μm.
Obtain the silicon chip after diffusion layer, etch at described silicon chip surface, in the present invention, described etching is preferably carried out as follows:
The diffusion layer of silicon chip back side is removed, the acid adopted is the mixed solution of nitric acid, hydrofluoric acid and deionized water, wherein, described nitric acid, hydrofluoric acid and deionized water volume ratio are preferably (4 ~ 5): (1 ~ 2): 1, in acid solution, the temperature range of polishing is preferably 10 ~ 20 DEG C.
After silicon chip back side surface treatment terminates, at front side of silicon wafer deposition SiN
xlayer, in the present invention, preferably adopts PECVD device to carry out SiN
xthe deposition of layer, concrete, in described PECVD device, pass into SiH
4and NH
3carry out deposition at described front side of silicon wafer and obtain SiN
xlayer, the thickness of described SiNx is 80nm, and refractive index is 2.The SiNx layer being deposited on front side of silicon wafer is penetrated for front passivated reflection reducing.
After silicon chip surface process terminates, at surface treated silicon chip surface oxidation formation the one SiO
xlayer.Concrete, oxygen-containing gas carries out oxidation reaction at surface treated silicon chip surface, obtains a SiO
xlayer, described oxygen-containing gas is selected from steam, oxygen, ozone, CO
2or N
2o.
In the present invention, described oxidation reaction is thermal oxidation, plasma oxidation or ozone oxidation.Wherein, described thermal oxidation is preferably carried out as follows:
Be placed on by silicon chip in high temperature furnace, pass into oxygen-containing gas, described oxygen-containing gas and silicon chip surface react, and obtain one deck silica film, i.e. a SiO
xlayer.Wherein, described oxygen-containing gas is preferably steam or oxygen, and described oxygen can be dry oxygen also can be wet oxygen.Described reaction temperature is preferably 650 ~ 850 DEG C, and the reaction time is preferably 30 ~ 300min.
In the present invention, preferred thermal oxidation process is:
Be placed on by silicon chip in oxidation furnace, pass into oxygen, described oxygen and silicon chip surface react, and obtain one deck silica film, i.e. a SiO
xlayer.Described reaction temperature is preferably 650 ~ 850 DEG C, and the reaction time is preferably 30 ~ 300min.
Described plasma oxidation preferably carries out as follows:
Silicon chip is placed in filming equipment, in filming equipment, passes into oxygen-containing gas, open radio-frequency power supply, generate one deck silica film, i.e. a SiO in silicon chip surface reaction after a certain time
xlayer.Wherein, described oxygen-containing gas is preferably CO
2or N
2o, the flow of described oxygen-containing gas is preferably 1 ~ 5slm, and the radio-frequency power of radio-frequency power supply is preferably 5000 ~ 7000w, and the reaction time is preferred 2 ~ 30min.
Described ozone oxidation is preferably carried out as follows:
Described silicon chip is placed in ozone environment, reacts, generate one deck silica film, i.e. a SiO in silicon chip surface reaction
xlayer.Wherein, described ozone concentration is preferably more than 1000ppm, and the processing time is 1min ~ 30min.
The SiO prepared according to the method described above
xthe thickness of layer is preferably 0.5 ~ 5nm, is more preferably 1 ~ 4nm; A described SiO
xthe refractive index of layer is 1.46 ~ 1.8, is preferably 1.5 ~ 1.7.
Obtain a SiO
xafter layer, at a described SiO
xlayer surface deposition the 2nd SiO
xlayer, concrete, by SiH
4pass into depositing device with oxygen-containing gas, carry out deposition reaction at surface treated silicon chip surface, obtain a SiO
xlayer, described oxygen-containing gas is selected from N
2o or CO
2.Wherein, described SiH
4the flow of gas is preferably 100 ~ 1000sccm, and the flow of described oxygen-containing gas is preferably 0.2 ~ 6slm, described SiH
4the flow-rate ratio of gas and described oxygen-containing gas is preferably 1: 20 ~ 60, the present invention preferably adopts Tubular PECVD device or board-like PECVD device to deposit, the overpressure of described depositing device is preferably 1600 ~ 2600mTorr, and radio-frequency power is 5000 ~ 7000w, and duty ratio is 2/8 ~ 2/14.Described 2nd SiO
xthe thickness of layer is preferably 5 ~ 40nm, is more preferably 15 ~ 35nm, described 2nd SiO
xthe refractive index of layer is 1.46 ~ 1.8, is preferably 1.5 ~ 1.7.
Obtain the 2nd SiO
xafter layer, at described 2nd SiO
xlayer surface deposition SiN
xlayer.Concrete, by SiH
4and NH
3pass into depositing device, at described 2nd SiO
xlayer carries out deposition reaction, obtains SiN
xlayer.Described NH
3flow is preferably 3 ~ 7slm, SiH
4flow be preferably 500 ~ 1000sccm, the present invention preferably adopts Tubular PECVD device or board-like PECVD device to deposit, the overpressure of described depositing device is preferably 1600 ~ 2600mTorr, and radio-frequency power is preferably 5000 ~ 7000w, and duty ratio is preferably 2/8 ~ 2/14.In the present invention, can at described 2nd SiO
xlayer deposition one deck silicon nitride film, also can at described 2nd SiO
xlayer deposit multilayer silicon nitride film.The SiN finally obtained
xthe thickness of layer is preferably 20 ~ 100nm, is more preferably 40 ~ 80nm; Described SiN
xthe refractive index of layer is preferably 1.9 ~ 2.3, is more preferably 2.0 ~ 2.2.
Obtain SiN
xafter layer, at described SiN
xlayer surface deposition Three S's iO
xlayer, obtains the stack membrane for carrying on the back passivating solar battery.Concrete, by SiH
4pass into depositing device with oxygen-containing gas, carry out deposition reaction at surface treated silicon chip surface, obtain Three S's iO
xlayer, described oxygen-containing gas is selected from N
2o or CO
2.Wherein, described SiH
4the flow of gas is preferably 100 ~ 1000sccm, and the flow of described oxygen-containing gas is preferably 0.2 ~ 6slm, described SiH
4the flow-rate ratio of gas and described oxygen-containing gas is preferably 1: 20 ~ 60, the present invention preferably adopts Tubular PECVD device or board-like PECVD device to deposit, the overpressure of described depositing device is preferably 1600 ~ 2600mTorr, and radio-frequency power is 5000 ~ 7000w, and duty ratio is 2/8 ~ 2/14.Described Three S's iO
xthe thickness of layer is preferably 20 ~ 100nm, is more preferably 40 ~ 80nm, described Three S's iO
xthe refractive index of layer is preferably 1.46 ~ 1.8, is more preferably 1.5 ~ 1.7.
Fig. 2 is shown in the technological process of the stack membrane for the preparation of back of the body passivating solar battery provided by the invention, and Fig. 2 is the process chart of the stack membrane for the preparation of back of the body passivating solar battery provided by the invention.First, the preparation of silicon chip, namely processes silicon chip surface, obtains surface treated silicon chip, then carries out oxidation reaction at surface treated silicon chip back side, obtains a SiO
xlayer, afterwards at a described SiO
xlayer surface deposition the 2nd SiO
xlayer, then at described 2nd SiO
xlayer surface deposition SiN
xlayer, finally at described SiN
xlayer surface deposition Three S's iO
xlayer.
Present invention also offers a kind of back of the body passivating solar battery, comprising:
Backplate, back surface field, stack membrane, local aluminum back surface field, P-type silicon sheet, N-type emitter, passivating film and front electrode;
Described backplate, back surface field, stack membrane, local aluminum back surface field, P-type silicon sheet, N-type emitter, passivating film are connected from bottom to up successively with front electrode;
Described stack membrane is the stack membrane for carrying on the back passivating solar battery that above-mentioned stack membrane for carrying on the back passivating solar battery or above-mentioned preparation method prepare.
Wherein, after the above-mentioned stack membrane for carrying on the back passivating solar battery of the silicon chip back side compound of described back of the body passivating solar battery, then carry out the back side and open film, silk screen printing and sintering process, can obtain carrying on the back passivating solar battery.
The present invention opens film to the described back side, the concrete grammar of silk screen printing and sintering process does not have particular restriction, well known to a person skilled in the art that the method for film, silk screen printing and sintering process is opened at the back side.
Concrete, the described back side is opened film and is preferably carried out as follows: adopt Nd/YAG laser violet laser to open film to silicon wafer lamination film, the shape opening film is wire, and the length of solid wire is 145 ~ 155mm, width is 20 ~ 80 μm, and the center distance of two adjacent lines is 0.5 ~ 3mm.
Silk screen printing is carried out after opening film in the back side, and described silk screen printing is preferably carried out as follows: adopt screen process press, at silicon chip back side printing silver slurry, at silicon chip back side printing aluminium paste after oven dry, at front side of silicon wafer printing silver slurry after oven dry.
After described silk screen printing, sinter.Described sintering preferably carries out as follows: carry out once sintered to the metallic diaphragm after silk screen printing, in the present invention, preferably adopts chain-type sintering furnace, and the temperature of described sintering is preferably 700 ~ 900 DEG C, finally obtains forming back of the body passivating solar battery.
The stack membrane of three layers of back of the body passivating solar battery provided by the invention can strengthen passivation effect and internal reflection effect, improves open circuit voltage and the short circuit current of solar cell, improves solar cell conversion efficiency.
Result shows, adopt the conversion efficiency of the P type polysilicon back passivating solar battery prepared for the stack membrane carrying on the back passivating solar battery provided by the invention to reach more than 19%, open circuit voltage is more than or equal to 645mV, and short circuit current is more than or equal to 37.69mA/cm
2.
In order to understand the present invention further, be described for stack membrane carrying on the back passivating solar battery and preparation method thereof and back of the body passivating solar battery provided by the invention below in conjunction with embodiment, protection scope of the present invention is not limited by the following examples.
Embodiment 1,
Select 156mm × 156mm, resistivity to be 1.5 Ω cm, thickness is the P type polysilicon chip of 180 μm, adopts wet chemical etching process to carry out texturing at front side of silicon wafer and the back side simultaneously.Described texturing solution is preferably the mixed solution of nitric acid, hydrofluoric acid and the deionized water that volume ratio is 1.8:0.6:1, and the temperature of described making herbs into wool is 5 ~ 15 DEG C.
The silicon chip surface of phosphorus oxychloride liquid source after making herbs into wool is utilized by silicon chip after making herbs into wool to carry out tubular type diffusion, wherein, described phosphorus oxychloride liquid source is carried by nitrogen, the nitrogen carrying phosphorus oxychloride be 800 milliliters per minute, oxygen 500 milliliters is per minute, pass into another road nitrogen is 10 Liter Per Minutes simultaneously, pressure is 10Pa.After diffusion, the square resistance measuring described silicon chip is 100/, and junction depth is 0.25 μm.
The silicon chip being compounded with diffusion layer is placed in the mixed solution of nitric acid, hydrofluoric acid and deionized water, wherein, described nitric acid, hydrofluoric acid and deionized water volume ratio are 5:1:1, and the temperature of polishing in acid solution is 10 ~ 20 DEG C.
After silicon chip back side surface treatment terminates, PECVD device is adopted to carry out the deposition of SiNx layer in the front of described silicon chip.SiH is passed in described PECVD device
4and NH
3carry out deposition at described front side of silicon wafer and obtain SiNx layer, the thickness of described SiNx is 80nm, and refractive index is 2.Wherein, described SiH
4and NH
3flow-rate ratio be 650sccm:6500sccm, the overpressure of described depositing device is preferably 1600 ~ 2600mTorr, and radio-frequency power is preferably 5000 ~ 7000w, and duty ratio is preferably 2/8 ~ 2/14, finally obtains surface treated P type polysilicon chip.
Embodiment 2
1, the P type polysilicon chip adopting the embodiment 1 of 156mm × 156mm to prepare, carries out the plasma oxidation of oxygen-containing gas, namely in Tubular PECVD device, passes into oxygen-containing gas N at the described P type polysilicon chip back side
2o, wherein, described N
2the flow of O is 5slm, and radio-frequency power is 7000w, and the reaction time is 5min.After reaction terminates, obtain a SiO
xlayer.A described SiO
xthe thickness of layer is 2nm, and refractive index is 1.5.
2, at a described SiO
xlayer surface adopts Tubular PECVD device deposition the 2nd SiO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 4slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 150s.After reaction terminates, obtain the 2nd SiO
xlayer, described 2nd SiO
xthe thickness of layer is 20nm, and refractive index is 1.7.
3, at the 2nd SiO
xlayer surface adopts Tubular PECVD device deposition SiNx layer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500w, and duty ratio is 2/14, sedimentation time 500s.After reaction terminates, obtain SiNx layer, described SiN
xthe thickness of layer is 80nm, and refractive index is 2.
4, at SiN
xlayer surface adopts Tubular PECVD device to deposit Three S's iO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 3slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 300s.Three S's iO is obtained after reaction terminates
xlayer, completes the preparation of stack membrane.Described Three S's iO
xthe thickness of layer is 50nm, and refractive index is 1.8.
4, adopt the stack membrane of Nd/YAG laser violet laser to silicon chip to open film, the shape opening film is wire, and the length of solid wire is 154mm, and width is 40 μm, and the center distance of two adjacent lines is 2mm.
After opening film, adopt screen process press, at silicon chip back side printing silver slurry, the weightening finish of back of the body silver is 0.025g/ sheet; At silicon chip back side printing aluminium paste after oven dry, the weightening finish of back of the body aluminium is 1.35g/ sheet; At front side of silicon wafer printing silver slurry after oven dry, positive silver weightening finish is 0.12g/ sheet.Adopt chain-type sintering furnace to carry out sintering 1 ~ 2s under peak temperature is 780 DEG C of conditions to the metallic diaphragm after silk screen printing, finally obtain forming back of the body passivating solar battery.
Measure the performance of described back of the body passivating solar battery, the results are shown in Table 1, the performance measurement result of the back of the body passivating solar battery that table 1 provides for the embodiment of the present invention 2 ~ 5 and comparative example 1
Embodiment 3
1, the P type polysilicon chip adopting the embodiment 1 of 156mm × 156mm to prepare, carries out the plasma oxidation of oxygen-containing gas, namely in Tubular PECVD device, passes into oxygen-containing gas CO at the described P type polysilicon chip back side
2, wherein, described CO
2flow be 5slm, radio-frequency power is 7000w, and the reaction time is 3min.After reaction terminates, obtain a SiO
xlayer.A described SiO
xthe thickness of layer is 2nm, and refractive index is 1.5.
2, at a described SiO
xlayer surface adopts Tubular PECVD device deposition the 2nd SiO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 4slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 180s.After reaction terminates, obtain the 2nd SiO
xlayer, a described SiO
xthe thickness of layer is 25nm, and refractive index is 1.7.
3, Tubular PECVD device deposition SiN is adopted on the 2nd SiOx layer surface
xlayer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500w, and duty ratio is 2/14, sedimentation time 450s.After reaction terminates, obtain SiN
xlayer, the thickness of described SiNx layer is 78nm, and refractive index is 2.
4, at SiN
xlayer surface adopts Tubular PECVD device to deposit Three S's iO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 3slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 350s.Three S's iO is obtained after reaction terminates
xlayer, completes the preparation of stack membrane.Described Three S's iO
xthe thickness of layer is 55nm, and refractive index is 1.8.
5, adopt Nd/YAG laser violet laser to open film to silicon wafer lamination film, the shape opening film is wire, and the length of solid wire is 154mm, and width is 40 μm, and the center distance of two adjacent lines is 2mm.
After opening film, adopt screen process press, at silicon chip back side printing silver slurry, the weightening finish of back of the body silver is 0.025g/ sheet; At silicon chip back side printing aluminium paste after oven dry, the weightening finish of back of the body aluminium is 1.35g/ sheet; At front side of silicon wafer printing silver slurry after oven dry, positive silver weightening finish is 0.12g/ sheet.
Adopt chain-type sintering furnace to carry out sintering 1 ~ 2s under peak temperature is 780 DEG C of conditions to the metallic diaphragm after silk screen printing, finally obtain forming back of the body passivating solar battery.
Measure the performance of described back of the body passivating solar battery, the results are shown in Table 1, the performance measurement result of the back of the body passivating solar battery that table 1 provides for the embodiment of the present invention 2 ~ 5 and comparative example 1
Embodiment 4
1, P type polysilicon chip prepared by the embodiment 1 of 156mm × 156mm is adopted, the ozone oxidation of oxygen-containing gas is carried out at the described P type polysilicon chip back side, ozone environment is placed in by described silicon chip, react, one deck silica film is generated in silicon chip surface reaction, described ozone concentration is preferably 1000ppm, and the processing time is 5min.After reaction terminates, obtain a SiO
xlayer.A described SiO
xthe thickness of layer is 2nm, and refractive index is 1.48.
2, at a described SiO
xlayer surface adopts Tubular PECVD device deposition the 2nd SiO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 4slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 150s.After reaction terminates, obtain the 2nd SiO
xlayer, described 2nd SiO
xthe thickness of layer is 20nm, and refractive index is 1.7.
3, at the 2nd SiO
xlayer surface adopts Tubular PECVD device deposition SiNx layer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500w, and duty ratio is 2/14, sedimentation time 500s.After reaction terminates, obtain SiNx layer, described SiN
xthe thickness of layer is 80nm, and refractive index is 2.
4, at SiN
xlayer surface adopts Tubular PECVD device to deposit Three S's iO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 3slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 300s.Three S's iO is obtained after reaction terminates
xlayer, completes the preparation of stack membrane.Described Three S's iO
xthe thickness of layer is 50nm, and refractive index is 1.8.
4, adopt the stack membrane of Nd/YAG laser violet laser to silicon chip to open film, the shape opening film is wire, and the length of solid wire is 154mm, and width is 40 μm, and the center distance of two adjacent lines is 2mm.
After opening film, adopt screen process press, at silicon chip back side printing silver slurry, the weightening finish of back of the body silver is 0.025g/ sheet; At silicon chip back side printing aluminium paste after oven dry, the weightening finish of back of the body aluminium is 1.35g/ sheet; At front side of silicon wafer printing silver slurry after oven dry, positive silver weightening finish is 0.12g/ sheet.Adopt chain-type sintering furnace to carry out sintering 1 ~ 2s under peak temperature is 780 DEG C of conditions to the metallic diaphragm after silk screen printing, finally obtain forming back of the body passivating solar battery.
Measure the performance of described back of the body passivating solar battery, the results are shown in Table 1, the performance measurement result of the back of the body passivating solar battery that table 1 provides for the embodiment of the present invention 2 ~ 5 and comparative example 1
Embodiment 5
1, P type polysilicon chip prepared by the embodiment 1 of 156mm × 156mm is adopted, the ozone oxidation of oxygen-containing gas is carried out at the described P type polysilicon chip back side, ozone environment is placed in by described silicon chip, react, one deck silica film is generated in silicon chip surface reaction, described ozone concentration is preferably 1000ppm, and the processing time is 10min.After reaction terminates, obtain a SiO
xlayer.A described SiO
xthe thickness of layer is 3nm, and refractive index is 1.48.
2, at a described SiO
xlayer surface adopts Tubular PECVD device deposition the 2nd SiO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 4slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 180s.After reaction terminates, obtain the 2nd SiO
xlayer, a described SiO
xthe thickness of layer is 25nm, and refractive index is 1.7.
3, Tubular PECVD device deposition SiN is adopted on the 2nd SiOx layer surface
xlayer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500w, and duty ratio is 2/14, sedimentation time 450s.After reaction terminates, obtain SiN
xlayer, the thickness of described SiNx layer is 78nm, and refractive index is 2.
4, at SiN
xlayer surface adopts Tubular PECVD device to deposit Three S's iO
xlayer: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 3slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 350s.Three S's iO is obtained after reaction terminates
xlayer, completes the preparation of stack membrane.Described Three S's iO
xthe thickness of layer is 55nm, and refractive index is 1.8.
5, adopt Nd/YAG laser violet laser to open film to silicon wafer lamination film, the shape opening film is wire, and the length of solid wire is 154mm, and width is 40 μm, and the center distance of two adjacent lines is 2mm.
After opening film, adopt screen process press, at silicon chip back side printing silver slurry, the weightening finish of back of the body silver is 0.025g/ sheet; At silicon chip back side printing aluminium paste after oven dry, the weightening finish of back of the body aluminium is 1.35g/ sheet; At front side of silicon wafer printing silver slurry after oven dry, positive silver weightening finish is 0.12g/ sheet.
Adopt chain-type sintering furnace to carry out sintering 1 ~ 2s under peak temperature is 780 DEG C of conditions to the metallic diaphragm after silk screen printing, finally obtain forming back of the body passivating solar battery.
Measure the performance of described back of the body passivating solar battery, the results are shown in Table 1, the performance measurement result of the back of the body passivating solar battery that table 1 provides for the embodiment of the present invention 2 ~ 5 and comparative example 1
Comparative example 1
1, adopt P type polysilicon chip prepared by the embodiment 1 of 156mm × 156mm, adopt Tubular PECVD device deposition the one SiOx layer at the described P type polysilicon chip back side: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 4slm, and overpressure is 1600mTorr, and radio-frequency power is 6000w, and duty ratio is 2/12, sedimentation time 150s.After reaction terminates, obtain a SiOx layer, the thickness of a described SiOx layer is 20nm, and refractive index is 1.7.
2, Tubular PECVD device deposition SiNx layer is adopted on a SiOx layer surface: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500w, and duty ratio is 2/14, sedimentation time 500s.After reaction terminates, obtain SiNx layer, the thickness of described SiNx layer is 80nm, and refractive index is 2.Complete the preparation of stack membrane.
3, adopt Nd/YAG laser violet laser to open film to silicon wafer lamination film, the shape opening film is wire, and the length of solid wire is 154mm, and width is 40 μm, and the center distance of two adjacent lines is 2mm.
After opening film, adopt screen process press, at silicon chip back side printing silver slurry, the weightening finish of back of the body silver is 0.025g/ sheet; At silicon chip back side printing aluminium paste after oven dry, the weightening finish of back of the body aluminium is 1.35g/ sheet; At front side of silicon wafer printing silver slurry after oven dry, positive silver weightening finish is 0.12g/ sheet.
Chain-type sintering furnace is adopted to the metallic diaphragm after silk screen printing
Under peak temperature is 780 DEG C of conditions, carries out sintering 1 ~ 2s, finally obtains forming back of the body passivating solar battery.Measure the performance of described back of the body passivating solar battery, the results are shown in Table 1, the performance measurement result of the back of the body passivating solar battery that table 1 provides for the embodiment of the present invention 2 ~ 5 and comparative example 1.
The performance measurement result of the back of the body passivating solar battery that table 1 embodiment of the present invention 2 ~ 5 and comparative example 1 provide
| Solar cell conversion ratio/% | Open circuit voltage/mV | Short-circuit current density/mA/cm 2 | |
| Embodiment 2 | 19.02％ | 645 | 37.69 |
| Embodiment 3 | 19.04％ | 646 | 37.73 |
| Embodiment 4 | 19.05％ | 646 | 37.74 |
| Embodiment 5 | 19.04％ | 646 | 37.73 |
| Comparative example 1 | 18.92％ | 642 | 37.68 |
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (11)
1. for carrying on the back a stack membrane for passivating solar battery, it is characterized in that, comprising the first silicon oxide layer, the second silicon oxide layer, silicon nitride layer and the 3rd silicon oxide layer that are compound in silicon chip surface successively.
2. stack membrane according to claim 1, is characterized in that, the thickness of described first silicon oxide layer is 0.5 ~ 5nm, and refractive index is 1.46 ~ 1.8.
3. stack membrane according to claim 1, is characterized in that, the thickness of described second silicon oxide layer is 5 ~ 40nm, and refractive index is 1.46 ~ 1.8.
4. stack membrane according to claim 1, is characterized in that, and described silicon nitride layer serves as reasons >=and the silicon nitride film of 1 layer is composited, and the thickness of described silicon nitride layer is 20 ~ 100nm, and refractive index is 1.9 ~ 2.3.
5. stack membrane according to claim 1, is characterized in that, the thickness of described 3rd silicon oxide layer is 20 ~ 100nm, and refractive index is 1.46 ~ 1.8.
6. for carrying on the back a preparation method for the stack membrane of passivating solar battery, it is characterized in that, comprising the following steps:
A) at surface treated silicon chip surface oxidation formation first silicon oxide layer;
B) at described first silicon oxide layer surface deposition second silicon oxide layer;
C) at described second silicon oxide layer surface deposition silicon nitride layer;
D) at described silicon nitride layer surface deposition the 3rd silicon oxide layer, the stack membrane for carrying on the back passivating solar battery is obtained.
7. preparation method according to claim 6, is characterized in that,
Steps A) be specially:
Oxygen-containing gas carries out oxidation reaction at surface treated silicon chip surface, obtains the first silicon oxide layer, and described oxygen-containing gas is selected from steam, oxygen, ozone, CO
2or N
2o;
Step B) be specially:
By SiH
4pass into depositing device with oxygen-containing gas, carry out deposition reaction on the first silicon oxide layer surface, obtain the second silicon oxide layer, described oxygen-containing gas is selected from N
2o or CO
2;
Step C) be specially:
By SiH
4and NH
3pass into depositing device, carry out deposition reaction at described second silicon oxide layer, obtain silicon nitride layer;
Step D) be specially:
By SiH
4pass into depositing device with oxygen-containing gas, carry out deposition reaction on described silicon nitride layer surface, obtain the 3rd silicon oxide layer, described oxygen-containing gas is selected from N
2o or CO
2.
8. the preparation method according to claim 6 or 7, is characterized in that, steps A) in, described in be oxidized to thermal oxidation, plasma oxidation or ozone oxidation; Step B) in, adopt Tubular PECVD device or board-like PECVD device to deposit; Step C) in, adopt Tubular PECVD device or board-like PECVD device to deposit; Step D) in, adopt Tubular PECVD device or board-like PECVD device to deposit; .
9. preparation method according to claim 6, is characterized in that, described surface treated silicon chip is successively through the silicon chip of making herbs into wool, diffusion, etching and front coating process.
10. preparation method according to claim 6, is characterized in that, the thickness of described first silicon oxide layer is 0.5 ~ 5nm, and refractive index is 1.46 ~ 1.8;
The thickness of described second silicon oxide layer is 5 ~ 40nm, and refractive index is 1.46 ~ 1.8;
Described silicon nitride layer serves as reasons >=and the silicon nitride film of 1 layer is composited, and the thickness of described silicon nitride layer is 20 ~ 100nm, and refractive index is 1.9 ~ 2.3;
The thickness of described 3rd silicon oxide layer is 20 ~ 100nm, and refractive index is 1.46 ~ 1.8.
11. 1 kinds of back of the body passivating solar batteries, is characterized in that, comprising:
Backplate, back surface field, stack membrane, local aluminum back surface field, P-type silicon sheet, N-type emitter, passivating film and front electrode;
Described backplate, back surface field, stack membrane, local aluminum back surface field, P-type silicon sheet, N-type emitter, passivating film are connected from bottom to up successively with front electrode;
The stack membrane for carrying on the back passivating solar battery that the preparation method provided for the stack membrane or claim 6 ~ 10 of carrying on the back passivating solar battery that described stack membrane provides for Claims 1 to 5 prepares.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510559052.7A CN105161547A (en) | 2015-09-06 | 2015-09-06 | Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510559052.7A CN105161547A (en) | 2015-09-06 | 2015-09-06 | Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161547A true CN105161547A (en) | 2015-12-16 |
Family
ID=54802360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510559052.7A Pending CN105161547A (en) | 2015-09-06 | 2015-09-06 | Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161547A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212071A (en) * | 2019-05-22 | 2019-09-06 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN110854243A (en) * | 2019-12-31 | 2020-02-28 | 昊诚光电（太仓）有限公司 | Silicon oxynitride PERC back passivation method and passivation furnace |
| CN111192935A (en) * | 2019-12-25 | 2020-05-22 | 广东爱旭科技有限公司 | Tubular PERC solar cell back passivation structure and preparation method thereof |
| CN113555472A (en) * | 2021-07-16 | 2021-10-26 | 安徽华晟新能源科技有限公司 | Heterojunction battery processing method, sliced heterojunction battery and heterojunction battery assembly |
-
2015
- 2015-09-06 CN CN201510559052.7A patent/CN105161547A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212071A (en) * | 2019-05-22 | 2019-09-06 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN111192935A (en) * | 2019-12-25 | 2020-05-22 | 广东爱旭科技有限公司 | Tubular PERC solar cell back passivation structure and preparation method thereof |
| CN111192935B (en) * | 2019-12-25 | 2022-10-18 | 广东爱旭科技有限公司 | Back passivation structure of tubular PERC solar cell and preparation method thereof |
| CN110854243A (en) * | 2019-12-31 | 2020-02-28 | 昊诚光电（太仓）有限公司 | Silicon oxynitride PERC back passivation method and passivation furnace |
| CN110854243B (en) * | 2019-12-31 | 2024-03-22 | 太仓市哲泰天产品设计有限公司 | Passivation method and passivation furnace for PERC back of silicon oxynitride |
| CN113555472A (en) * | 2021-07-16 | 2021-10-26 | 安徽华晟新能源科技有限公司 | Heterojunction battery processing method, sliced heterojunction battery and heterojunction battery assembly |
| CN113555472B (en) * | 2021-07-16 | 2023-12-29 | 安徽华晟新能源科技有限公司 | Heterojunction battery processing method, sliced heterojunction battery and heterojunction battery assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2021031500A1 (en) | Solar cell with composite dielectric passivation layer structure, and preparation process therefor | |
| CN105226112B (en) | A kind of preparation method of efficient crystal silicon solar batteries | |
| CN107195699A (en) | One kind passivation contact solar cell and preparation method | |
| CN206864484U (en) | One kind passivation contact solar cell | |
| AU2020363658A1 (en) | Efficient back passivation crystalline silicon solar cell and manufacturing method therefor | |
| CN115621333B (en) | Back contact solar cell passivated by double-sided tunneling silicon oxide and preparation method thereof | |
| CN105810779B (en) | A kind of preparation method of PERC solar cells | |
| CN106169510A (en) | Solar battery back passivation film structure and preparation method | |
| CN116525708B (en) | Front-side wide band gap doped combined passivation back contact solar cell and preparation method thereof | |
| CN102339871B (en) | Positive dielectric film of sandwich structure suitable for RIE (reactive ion etching) texture and manufacturing method thereof | |
| CN109192813A (en) | PERC cell backside passivation technology | |
| CN105161547A (en) | Stack film for back passivated solar cell and manufacturing method of stack film and back passivated solar cell | |
| CN110890432A (en) | Efficient polycrystalline silicon solar cell and preparation method thereof | |
| CN207705205U (en) | A kind of back contact solar cell | |
| CN109888060A (en) | A kind of solar cell and preparation method thereof with three layers of passivation layer structure | |
| CN104659150A (en) | Preparation method of crystalline silicon solar battery multi-layer antireflection film | |
| CN112820783A (en) | Silicon oxynitride PERC battery back passivation structure, preparation method thereof and PERC battery comprising silicon oxynitride PERC battery back passivation structure | |
| CN113257927A (en) | PERC battery back passivation structure, PERC battery and preparation method | |
| CN105185842A (en) | Back composite membrane for back passivation solar cell and preparation method of back composite membrane and back passivation solar cell | |
| CN110047950A (en) | A kind of solar cell and preparation method thereof with passivation layer structure | |
| CN110212037A (en) | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation | |
| CN214176046U (en) | Silicon oxynitride PERC battery back passivation structure and PERC battery comprising same | |
| CN107863415A (en) | A kind of method of thermal oxide combination PECVD liftings solar battery sheet transformation efficiency | |
| CN104362188B (en) | A kind of solar cell resisting potential induced degradation and preparation method thereof | |
| CN104241410B (en) | Composite silicon based materials and its preparation method and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |