CN116004233A - Etching additive for improving uniformity of textured surface of silicon wafer and use method - Google Patents
Etching additive for improving uniformity of textured surface of silicon wafer and use method Download PDFInfo
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- CN116004233A CN116004233A CN202211609761.8A CN202211609761A CN116004233A CN 116004233 A CN116004233 A CN 116004233A CN 202211609761 A CN202211609761 A CN 202211609761A CN 116004233 A CN116004233 A CN 116004233A
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- 238000005530 etching Methods 0.000 title claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 239000000654 additive Substances 0.000 title claims abstract description 45
- 230000000996 additive effect Effects 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000008367 deionised water Substances 0.000 claims abstract description 15
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- 239000002270 dispersing agent Substances 0.000 claims abstract description 12
- 239000000080 wetting agent Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 239000002667 nucleating agent Substances 0.000 claims abstract description 11
- 239000008139 complexing agent Substances 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 61
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 239000003513 alkali Substances 0.000 claims description 13
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 9
- 239000002518 antifoaming agent Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 8
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000003208 petroleum Substances 0.000 claims description 6
- 239000004115 Sodium Silicate Substances 0.000 claims description 4
- 229920002313 fluoropolymer Polymers 0.000 claims description 4
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 4
- 229940113115 polyethylene glycol 200 Drugs 0.000 claims description 4
- 229940068918 polyethylene glycol 400 Drugs 0.000 claims description 4
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 4
- HRQDCDQDOPSGBR-UHFFFAOYSA-M sodium;octane-1-sulfonate Chemical compound [Na+].CCCCCCCCS([O-])(=O)=O HRQDCDQDOPSGBR-UHFFFAOYSA-M 0.000 claims description 4
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims description 3
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 238000010923 batch production Methods 0.000 claims description 3
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 229940057847 polyethylene glycol 600 Drugs 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 239000001397 quillaja saponaria molina bark Substances 0.000 claims description 3
- 229930182490 saponin Natural products 0.000 claims description 3
- 150000007949 saponins Chemical class 0.000 claims description 3
- 239000000661 sodium alginate Substances 0.000 claims description 3
- 235000010413 sodium alginate Nutrition 0.000 claims description 3
- 229940005550 sodium alginate Drugs 0.000 claims description 3
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 3
- 239000000176 sodium gluconate Substances 0.000 claims description 3
- 235000012207 sodium gluconate Nutrition 0.000 claims description 3
- 229940005574 sodium gluconate Drugs 0.000 claims description 3
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 3
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 3
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 3
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 3
- DAJSVUQLFFJUSX-UHFFFAOYSA-M sodium;dodecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCS([O-])(=O)=O DAJSVUQLFFJUSX-UHFFFAOYSA-M 0.000 claims description 3
- PNGBYKXZVCIZRN-UHFFFAOYSA-M sodium;hexadecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCCCCCS([O-])(=O)=O PNGBYKXZVCIZRN-UHFFFAOYSA-M 0.000 claims description 3
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 3
- 229960004418 trolamine Drugs 0.000 claims description 3
- TWWNLDITIRCJDN-UHFFFAOYSA-N 1,2-bis(2-methylpropyl)naphthalene;sodium Chemical compound [Na].C1=CC=CC2=C(CC(C)C)C(CC(C)C)=CC=C21 TWWNLDITIRCJDN-UHFFFAOYSA-N 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 235000019387 fatty acid methyl ester Nutrition 0.000 claims 1
- -1 sodium fatty alcohol Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000013530 defoamer Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- AFVFQIVMOAPDHO-UHFFFAOYSA-M Methanesulfonate Chemical compound CS([O-])(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-M 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 150000002191 fatty alcohols Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001802 infusion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- PYODKQIVQIVELM-UHFFFAOYSA-M sodium;2,3-bis(2-methylpropyl)naphthalene-1-sulfonate Chemical compound [Na+].C1=CC=C2C(S([O-])(=O)=O)=C(CC(C)C)C(CC(C)C)=CC2=C1 PYODKQIVQIVELM-UHFFFAOYSA-M 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses an etching additive for improving the uniformity of a silicon wafer texture and a use method thereof, which comprises 2-4% of dispersing agent, 0.05-0.1% of wetting agent, 0.1-0.5% of nucleating agent, 0.5-1% of complexing agent, 0.05-0.1% of defoamer and deionized water, wherein the silicon wafer etching solution is prepared after uniform mixing, then the silicon wafer etching solution is prepared after uniform mixing, the silicon wafer is put into the silicon wafer etching solution for etching, the uniformity of the texture after etching is improved to a great extent, the problem of surface ravine of the silicon wafer caused by a front-end procedure is reduced, the cleaning and efficiency are improved, and the conversion efficiency of a solar cell is improved by 0.02-0.06%.
Description
Technical Field
The invention relates to the technical field of solar cell silicon wafers, in particular to an etching additive for improving the uniformity of a silicon wafer texture and a use method thereof.
Background
The energy problem is always plagued by various enterprises and even countries, and the traditional fossil energy is unevenly distributed in various areas and has larger pollution in use, so that people are continually searching for new energy outside the traditional fossil energy, and the existing new energy mainly comprises solar energy, wind energy, hydrogen energy, geothermal energy, nuclear energy, water energy, biomass energy, ocean energy and the like, and the solar energy is one of the most widely used clean energy among the new energy.
The solar cell converts solar energy into electric energy for human use, a silicon material is one of the most core raw materials in the conversion process, a single-crystal silicon wafer and a polycrystalline silicon wafer are manufactured from the silicon material through a series of procedures, a solar cell piece is manufactured through a series of procedures of texturing, diffusion, passivation, antireflection, electrode preparation and the like, a photovoltaic power station is formed through assembly and installation, light is converted into electricity and is transmitted to various areas, and solar power generation is not limited to the power station, and the solar power generation is not limited to space vehicles, but is small to children toys.
In the process of manufacturing the solar cell, the texturing is one of the first main working procedures after the silicon material is processed into single and polycrystalline silicon wafers, and the market of the original polycrystalline silicon is gradually replaced along with the continuous updating of the monocrystalline silicon solar cell technology. The etching of monocrystalline silicon mainly uses alkali to react with silicon wafers to form the textured surface, and the existence of the etching additive is used for better and faster forming of the textured surface, the etching time is from about 1000s at first to about 400s at present, the time is greatly shortened, the productivity is increased, but the market pursues high conversion efficiency, the continuous refinement of the etching additive is promoted, and the requirement on the etched textured surface is higher and higher. And the silicon wafer cutting technology is changed from mortar cutting to diamond wire cutting, the surface is smoother, but some gullies caused by diamond wire cutting exist, a soda etching process is added before etching and texturing to remove the defects of the gullies on the surface, and the like.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides an etching additive for improving the uniformity of a silicon wafer texture and a use method thereof.
In order to achieve the technical effects, the invention adopts the following scheme:
an etching additive for improving the uniformity of a silicon wafer texture comprises a dispersing agent, a wetting agent, a nucleating agent, a complexing agent, a defoaming agent and deionized water, and comprises the following components in percentage by weight:
the balance of deionized water.
In a preferred technical scheme, the dispersing agent comprises one or at least two of sodium silicate, sodium dodecyl benzene sulfonate, sodium polyacrylate and modified fiber.
According to a preferred technical scheme, the wetting agent comprises one or at least two of saponin, sodium fatty acid methyl sulfonate, sodium petroleum sulfonate, glycerol and sodium diisobutyl naphthalene sulfonate.
According to a preferred technical scheme, the nucleating agent comprises one or at least two of polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600, sodium octyl sulfonate, sodium dodecyl sulfonate, sodium hexadecyl sulfonate and sodium petroleum sulfonate.
According to a preferred technical scheme, the complexing agent comprises one or at least two of sodium thiosulfate, ethylenediamine tetraacetic acid (EDTA), sodium hexametaphosphate, triethanolamine, sodium gluconate and sodium alginate.
According to the preferred technical scheme, the defoaming agent comprises one or at least two of ethylene glycol monobutyl ether, isopropanol, fatty alcohol polyoxyethylene ether sodium sulfate and nonionic fluorocarbon polymer.
A method of using an etching additive comprising the steps of:
s1, preparing a silicon wafer etching additive: adding 2-4% of dispersing agent, 0.05-0.1% of wetting agent, 0.1-0.5% of nucleating agent, 0.5-1% of complexing agent and 0.05-0.1% of defoaming agent into deionized water, and uniformly mixing to obtain a silicon wafer etching additive;
s2, preparing silicon wafer etching liquid: adding the silicon wafer etching additive prepared in the step S1 into an alkali solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare a silicon wafer etching solution;
s3, putting the silicon wafer into the silicon wafer etching liquid prepared in the step S2 for etching, and cleaning for 300-480S at the temperature of 78-84 ℃.
According to the preferred technical scheme, the alkali solution is sodium hydroxide solution with the mass percentage content of 0.6-1.3%.
According to the preferred technical scheme, the etching in the step S3 is continuously carried out in batches, 200-600 wafers are taken as a batch, alkali and a wafer etching additive are required to be added after each batch of wafers are etched, and thus, the batch production is completed by circulating fluid infusion.
Compared with the prior art, the beneficial effects are as follows:
(1) The dispersing agent can better disperse the reaction product of alkali and silicon wafers into the solution, and in addition, the effective components in the etching additive can be uniformly dispersed in the etching solution, and the effective components are carried into the dispersing product to be repeatedly carried out continuously to finish etching. In addition, the dispersing agent also has a certain anti-precipitation effect, so that the etching additive is more stable.
(2) The hydrophobic section of the wetting agent is combined with the silicon wafer in the solution, the hydrophilic section plays a role in wetting along with the flow of water to strip dirt from the surface of the silicon wafer, and due to the influence of the previous process of the silicon wafer, the surface tension of the solution is reduced by the wetting agent, so that the effective substances are indiscriminately acted on the surface of the silicon wafer, and the effect of uniform etching is achieved.
(3) The nucleating agent adopts surfactants with different molecular weights, and utilizes substances with small molecular weights to etch gaps on the surface of the silicon wafer while reducing interfacial tension, so as to achieve the uniformity of the etched suede.
(4) After the silicon wafer cleaning agent is used, the uniformity of the etched texture is improved to a great extent, the problem of surface raviness of the silicon wafer caused by the front-end working procedure is reduced, the cleaning and efficiency are improved, and the conversion efficiency of the solar cell is improved by 0.02-0.06%.
Drawings
FIG. 1 is an SEM image of an original silicon wafer before etching;
FIG. 2 is a SEM image of a textured surface after etching by an etching additive according to the prior art
FIG. 3 is a SEM image of a pile face after etching using an etching additive of the present invention;
fig. 4 is a comparison of photoelectric conversion efficiency of the battery cells obtained by the treatment of comparative example 1 and example 1 of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
The etching additive for improving the uniformity of the solar suede comprises a dispersing agent, a wetting agent, a nucleating agent, a complexing agent, a defoaming agent and deionized water, and comprises the following components in percentage by weight:
the balance of deionized water.
In a preferred technical scheme, the dispersing agent comprises one or at least two of sodium silicate, sodium dodecyl benzene sulfonate, sodium polyacrylate and modified fiber.
According to a preferred technical scheme, the wetting agent comprises one or at least two of saponin, sodium fatty acid methyl sulfonate, sodium petroleum sulfonate, glycerol and sodium diisobutyl naphthalene sulfonate.
According to a preferred technical scheme, the nucleating agent comprises one or at least two of polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600, sodium octyl sulfonate, sodium dodecyl sulfonate, sodium hexadecyl sulfonate and sodium petroleum sulfonate.
According to a preferred technical scheme, the complexing agent comprises one or at least two of sodium thiosulfate, ethylenediamine tetraacetic acid (EDTA), sodium hexametaphosphate, triethanolamine, sodium gluconate and sodium alginate.
According to the preferred technical scheme, the defoaming agent comprises one or at least two of ethylene glycol monobutyl ether, isopropanol, fatty alcohol polyoxyethylene ether sodium sulfate and nonionic fluorocarbon polymer.
A method of using an etching additive comprising the steps of:
s1, preparing a silicon wafer etching additive: adding 2-4% of dispersing agent, 0.05-0.1% of wetting agent, 0.1-0.5% of nucleating agent, 0.5-1% of complexing agent and 0.05-0.1% of defoaming agent into deionized water, and uniformly mixing to obtain a silicon wafer etching additive;
s2, preparing silicon wafer etching liquid: adding the silicon wafer etching additive prepared in the step S1 into an alkali solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare a silicon wafer etching solution;
s3, putting the silicon wafer into the silicon wafer etching liquid prepared in the step S2 for etching, and cleaning for 300-480S at the temperature of 78-84 ℃.
According to the preferred technical scheme, the alkali solution is sodium hydroxide solution with the mass percentage content of 0.6-1.3%.
According to the preferred technical scheme, the etching in the step S3 is continuously carried out in batches, 200-600 wafers are taken as a batch, alkali and a wafer etching additive are required to be added after each batch of wafers are etched, and thus, the batch production is completed by circulating fluid infusion.
Control group 1 (control group 1 is a prior art texturing method)
Monocrystalline silicon texturing
Adding 350L of deionized water into a texturing tank, heating to 80 ℃, keeping the temperature constant, adding 5.5L of sodium hydroxide solution (48% solid content) and 2.0L of etching additive in the prior art of a production line, starting circulation bubbling, uniformly mixing, putting the silicon wafer subjected to the pre-cleaning into the texturing tank for reaction for 420s by taking 400pcs as one batch, taking out the silicon wafer after the reaction is finished, performing the subsequent processes of cleaning, drying and the like, adding 550mL of alkali liquor, 130mL of etching additive and 12000mL of deionized water after each etching reaction is carried out for 1 batch, and thus, circularly supplementing the liquid to finish the cleaning of each batch of silicon wafer.
Example 1 (example 1 is one embodiment of the present application)
(1) Configuring an etching additive
Adding 0.5% of sodium polyacrylate, 1% of sodium silicate, 0.05% of glycerol, 0.01% of polyethylene glycol 400, 0.2% of polyethylene glycol 200, 0.01% of sodium octyl sulfonate, 0.6% of ethylenediamine tetraacetic acid (EDTA) and 0.05% of nonionic fluorocarbon polymer into deionized water, and uniformly mixing to obtain the silicon wafer etching additive.
(2) Monocrystalline silicon texturing
Adding 350L of deionized water into a texturing tank, heating to 80 ℃, keeping the temperature constant, adding 5.5L of sodium hydroxide solution (48% solid content) and 2.0L of the etching additive, starting circulation bubbling, uniformly mixing, putting the silicon wafer subjected to the pre-cleaning into the texturing tank for reaction for 420s by taking 400pcs as a batch, taking out the silicon wafer after the reaction is finished, performing the subsequent working procedures of cleaning, drying and the like, adding 550mL of alkali liquor, 130mL of the etching additive and 12000mL of deionized water after each etching reaction is carried out for 1 batch, and thus, circularly supplementing the liquid to finish the cleaning of each batch of silicon wafer.
The silicon wafer before etching, the silicon wafer etched by the additive in the prior art and the silicon wafer etched by the additive in the application are observed by an electron scanning microscope, and the results are respectively shown in fig. 1, 2 and 3.
In addition, the conversion efficiency of a solar cell made from a silicon wafer etched using the additive of the present invention was significantly improved as compared to a solar cell made from a silicon wafer etched using the additive of the present invention, and the results are shown in the table of fig. 4.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, or the directions or positional relationships conventionally put in place when the inventive product is used, or the directions or positional relationships conventionally understood by those skilled in the art are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Claims (9)
1. The etching additive for improving the uniformity of the solar suede is characterized by comprising a dispersing agent, a wetting agent, a nucleating agent, a complexing agent, a defoaming agent and deionized water, and comprises the following components in percentage by weight:
the balance of deionized water.
2. The etching additive for improving the uniformity of a solar pile surface according to claim 1, wherein the dispersing agent comprises one or at least two of sodium silicate, sodium dodecylbenzene sulfonate, sodium polyacrylate and modified fiber.
3. The etching additive for improving the uniformity of a solar pile surface according to claim 1, wherein the wetting agent comprises one or at least two of saponin, fatty acid methyl ester sodium sulfonate, petroleum sodium sulfonate, glycerol and diisobutyl naphthalene sodium sulfonate.
4. The etching additive for improving the uniformity of a solar pile surface according to claim 1, wherein the nucleating agent comprises one or at least two of polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600, sodium octyl sulfonate, sodium dodecyl sulfonate, sodium cetyl sulfonate and sodium petroleum sulfonate.
5. The etching additive for improving the uniformity of a solar pile surface according to claim 1, wherein the complexing agent comprises one or at least two of sodium thiosulfate, ethylenediamine tetraacetic acid (EDTA), sodium hexametaphosphate, triethanolamine, sodium gluconate, and sodium alginate.
6. The etching additive for improving the uniformity of the solar pile surface according to claim 1, wherein the defoaming agent comprises one or at least two of ethylene glycol monobutyl ether, isopropanol, sodium fatty alcohol polyoxyethylene ether sulfate and nonionic fluorocarbon polymer.
7. A method of using the etching additive of claim 1, comprising the steps of:
s1, preparing a silicon wafer etching additive: adding 2-4% of dispersing agent, 0.05-0.1% of wetting agent, 0.1-0.5% of nucleating agent, 0.5-1% of complexing agent and 0.05-0.1% of defoaming agent into deionized water, and uniformly mixing to obtain a silicon wafer etching additive;
s2, preparing silicon wafer etching liquid: adding the silicon wafer etching additive prepared in the step S1 into an alkali solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare a silicon wafer etching solution;
s3, putting the silicon wafer into the silicon wafer etching liquid prepared in the step S2 for etching, and cleaning for 300-480S at the temperature of 78-84 ℃.
8. The method of using an etching additive as claimed in claim 7, wherein the alkali solution is a sodium hydroxide solution with a mass percentage of 0.6-1.3%.
9. The method of claim 7, wherein the etching in step S3 is performed continuously in batches, 200-600 wafers are used as a batch, and alkali and silicon wafer etching additives are added after each batch of silicon wafers is etched, so that the liquid is supplemented circularly to complete batch production.
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