CN104538331B - A kind of device and method of silicon wafer warpage processing - Google Patents
A kind of device and method of silicon wafer warpage processing Download PDFInfo
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- CN104538331B CN104538331B CN201410763661.XA CN201410763661A CN104538331B CN 104538331 B CN104538331 B CN 104538331B CN 201410763661 A CN201410763661 A CN 201410763661A CN 104538331 B CN104538331 B CN 104538331B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
The present invention provides a kind of devices of silicon wafer warpage processing, and including plummer 1, the wafer 2 that warpage occurs is located on plummer 1；Sealing device 3 on plummer 1, sealing device 3 and plummer about 1 make-up seal to form annular seal space 4.Filled with inert gas or nitrogen in annular seal space 4.Gas input device 6 is installed on sealing device 3.1 lower part of plummer is equipped with gas extraction arrangement 9, and gas extraction arrangement 9 is connected with plummer 1.3 top of sealing device is provided with mobile arm 11.The present invention also provides a kind of silicon wafer warpage processing methods, comprise the following steps：By wafer as on plummer；Sealed environment is formed based on plummer；Pressure is applied to wafer upper surface using gas.The present invention silicon wafer warpage processing unit it is simple and practical in structure；Absorption dynamics of the wafer to plummer can be improved by the input and extraction of gas.
Description
Technical field
The present invention relates to the manufacture devices and method of a kind of semiconductor crystal wafer, and in particular to a kind of dress of silicon wafer warpage processing
It puts and method.
Background technology
The phenomenon that warpage is generally existing during integrated circuit is manufactured, particularly often meets in later process
To the wafer that warpage occurs.Silicon chip under high temperature can draw because of the thermal stress that gravity or temperature gradient, the cooling method of itself generate
It plays dislocation to slide in slide surface, the sliding and movement of a large amount of dislocations generated in a small amount of dislocation and high-temperature process of wafer are made
Into the plastic deformation of silicon chip.As shown in Figure 1, the wafer of normal sorption can be close on absorptive table, the big wafer of amount of warpage
Absorption will be caused loosely even to have no to adsorb.And once run into warpage wafer can not normal sorption situation, technical process will very
Difficulty continues down, and the warpage of wafer gives the photoetching process of complicated line pattern to bring difficulty, experiments have shown that, more than 10 microns
Warpage 3 microns of line width techniques are difficult to.
Though industry at present be directed to solve absorption problem, can also frequently encounter plummer can not normal sorption feelings
Condition, typical situation be exactly the plummer of litho machine since flatness requirement is high, the big wafer of amount of warpage just can not be normal
Absorption.
There is portion of techniques to be directed to solving the problems, such as above-mentioned silicon wafer warpage at present.For example, Application No.
A kind of method for preventing warpage deformation of diamond wafer is disclosed in the Chinese patent of CN201210239663.X, is comprised the following steps：Step
Rapid one, deposited oxide layer and coating photoresist on wafer；Wafer is the wafer that buckling deformation may occur；Step 2 is right
Photoresist is exposed, develops, and exposes the oxide layer of Wafer Dicing slot overlying regions；The scribe line area exposed is scribing
A part for slot；Either entire scribe line.Step 3, carries out ion implanting, and ion passes through the oxidation above scribe line area
Layer, is injected into silicon chip；The type of injection ion is one kind or wherein several combinations in oxonium ion, Nitrogen ion, carbon ion.Step
Rapid four, remove photoresist and oxide layer；Step 5 carries out high-temperature annealing process to the wafer Jing Guo ion implanting, makes to be injected
Ion be uniformly distributed in scribe line, and repair the surface damage of silicon.The technical solution carries out ion note to scribe line area
Enter, the wafer that buckling deformation may occur is handled before various techniques are carried out, can prevent subsequent technique process
Buckling deformation occurs for middle wafer.However, the technology has used ion sputtering, since gas needs to ionize, except it is of high cost it
Outside, be to solve the warpage damaged and generated for silicon chip surface to a greater degree, the technology simply to carry out various techniques it
The preceding damage to the crystal column surface of buckling deformation may occur repair and handled.
In another example one kind is disclosed in the patent application of Application No. CN201210480122.6 for adjusting silicon wafer warpage
Method and apparatus, technical solution is to provide the wafer with central part and marginal portion；There is provided thereon has to protect
Hold the holding station of the holding area of wafer；Wafer is placed in the holding station, wherein central part is higher than marginal portion；By crystalline substance
Circle is pressed into holding area so that wafer is attracted and is maintained in holding station by self-suction；And the warpage according to wafer
Amount, with predetermined temperature and predetermined time heating wafer, so as to fulfill the wafer of substantially flat.It discloses made by air pressure
With wafer is caused to become flat, but there is no considering in this course, a series of problem will be brought using natural air,
Each middle gas componant will cause the surface of wafer the damage of physics and chemistry in air；On the other hand, pressure is not also considered
Influence of the size to wafer, the influence that the process of gas pressure testing be bonded wafer is not also considered, for example, too fast pressure general
Wafer is caused to be blown away, excessively slow pressure will cause the air below wafer to be arranged endless.
In conclusion there is presently no can be fully solved the side of the warpage of silicon chip and problem on deformation in semiconductor manufacturing
Method.
The content of the invention
To overcome the above-mentioned technical problems in the prior art, the present invention provides a kind of dresses of silicon wafer warpage processing
It puts, including plummer 1, the wafer 2 that warpage occurs is located on plummer 1；It is characterized in that, it further includes：On plummer 1
Sealing device 3, sealing device 3 and plummer about 1 make-up seal to form annular seal space 4.Optionally, filled with lazy in annular seal space 4
Property gas or nitrogen.The sealing device 3 is made of metal material.Sealing device 3 is the shape to match with plummer 1,
Its inside dimension is more than the diameter of wafer 2.Further, sealing device 3 and plummer 1 are provided with buckle seal assembly 5.It is described
Seal assembly 5 is O-shaped rubber ring.The seal assembly 5 is fixed on plummer 1,5 top of fixation kit offer with
3 corresponding groove 51 of sealing device.Further, the seal assembly 5 is fixed at the lower edge of sealing device 3, sealing group
5 lower part of part is offered to be equipped with and 52 corresponding card slot 11 of groove with 3 corresponding groove 52 of sealing device, plummer 1.
Preferably, gas input device 6 is installed, 6 lower part of gas input device is provided on the sealing device 3
Gas nozzle 61.The top of the input unit 6 through sealing device 3 is extended to down in annular seal space 4.
In another optional embodiment, the gas input device 6 is arranged on the top side wall of sealing device 3.It is described
Gas input device 6 is at least one, is uniformly distributed along the top side wall of sealing device 3.
Further, gas guiding plate 8 is equipped in sealing device 3, gas guiding plate 8 is low with the junction of sealing device 3
In the gas nozzle of gas input device 6.The directing plate 8 is from sealing device week along the extension in annular seal space 4, in horn-like
Or in inverted cone tubular, the opening of its underpart is located at the overcentre of disk 2.Annular seal space 4 is isolated two chambers by directing plate 8.
It is further preferable that 1 lower part of plummer is equipped with gas extraction arrangement 9, gas extraction arrangement 9 connects with plummer 1
It is logical.3 top of sealing device is provided with mobile arm 11.
The present invention also provides a kind of devices of silicon wafer warpage processing, and including plummer 1, the wafer 2 that warpage occurs is located at
On plummer 1；It is characterized in that, being provided with side wall 12 on plummer 1, side wall 12 is equipped with matched epicoele cover board
13, there is gas input device 6 on the epicoele cover board 13.Preferably, the side wall 12 is integrally formed with plummer 1, upper chamber cover
Plate 13 is connected with mobile arm 11.1 lower part of plummer is equipped with gas extraction arrangement 9, gas extraction arrangement 9 and plummer 1
Connection.The gas input device 6 is arranged on the side wall 12 on plummer 1.The gas input device 6 is at least one.
Further, the side wall 12 is equipped with gas guiding plate, and the junction of gas guiding plate and side wall is less than gas input device 6
Gas nozzle；Directing plate extends from sealing device week along in annular seal space, in horn-like or in inverted cone tubular, under
The opening in portion is positioned at the overcentre of disk 2.
The present invention also provides a kind of silicon wafer warpage processing methods, comprise the following steps：By wafer as on plummer；Base
Sealed environment is formed in plummer；Pressure is applied to wafer upper surface using gas.The sealed environment for right sealing device 3 with
Plummer about 1 make-up seal the annular seal space 4 to be formed；The gas is inert gas or nitrogen.It is described to utilize gas to crystalline substance
Circle upper surface applies pressure, and the gas input device 6 on sealing device 3 is by being arranged on the gas nozzle 61 of its underpart toward close
Seal injection gas 7 in chamber 4；The gas input device 6 can be one or multiple.The gas input device 6 is set
Put the top side wall in sealing device 3.Preferably, it is described that pressure is applied for secondary pressurized to wafer upper surface using gas, the
Once being pressurised into inflating pressure is：The gas nozzle 61 of gas input device 6 sprays gas 7, and gas 7 passes through gas guiding plate 8
Guiding, certain pressure N is applied to the upper surface of wafer 2 from the lower opening of directing plate 8；It is pressurised into for the second time：7 quilt of gas
After being injected into annular seal space 4, by the guiding of directing plate 8 after its lower opening applies pressure to wafer 2, gas 7 continues toward crystalline substance
The perimeter of circle 2, and continue to apply pressure to wafer 2 from inside to outside.
In addition, before step is based on plummer formation sealed environment, further include：It is taken out by the gas of 1 lower section of plummer
Device 9 is taken to carry out air extraction.Optionally, it is based on further including after plummer forms sealed environment in step：Pass through plummer 1
The gas extraction arrangement 9 of lower section carries out air extraction.
Compared with prior art, the beneficial effects of the invention are as follows：The structure of the silicon wafer warpage processing unit of the present invention is simple
It is practical；Absorption dynamics of the wafer to plummer can be improved by the input of gas, the mode of gas pressurized is rationally efficient, can keep away
The each side risk that manpower-free's operation is brought, and the warpage disk that can finally will be unable to continue normal process is accomplished work
Skill.
Description of the drawings
Fig. 1 adsorbs the schematic diagram of situation for the big wafer of the wafer and amount of warpage of normal sorption on absorptive table；
Fig. 2 is the first embodiment structure chart of silicon wafer warpage processing unit of the present invention；
Fig. 3 is the sealed structure chart of silicon wafer warpage processing unit of the present invention；
Fig. 4 is the second seals structure figure of silicon wafer warpage processing unit of the present invention；
Fig. 5 is the 3rd sealed structure chart of silicon wafer warpage processing unit of the present invention；
Fig. 6 is that the gas of silicon wafer warpage processing unit of the present invention inputs schematic diagram；
Fig. 7 is the second schematic diagram that the gas of silicon wafer warpage processing unit of the present invention inputs；
Fig. 8 is the 3rd schematic diagram that the gas of silicon wafer warpage processing unit of the present invention inputs；
Fig. 9 is that the gas of silicon wafer warpage processing unit of the present invention inputs the 3rd schematic diagram；
Figure 10 is the gas extraction structure diagram of silicon wafer warpage processing unit of the present invention；
Figure 11 is the mobile arm structure schematic diagram of silicon wafer warpage processing unit of the present invention；
Figure 12 is the mobile arm of silicon wafer warpage processing unit of the present invention.
Specific embodiment
Below in conjunction with drawings and examples, the present invention will be described in further detail.It is it should be appreciated that described herein
Specific embodiment only to explain the present invention, is not intended to limit the present invention.
In the first embodiment of the present invention, a kind of device of silicon wafer warpage processing is provided.As shown in Fig. 2, it is wrapped
Plummer 1 is included, the wafer 2 that warpage occurs is located on plummer 1, and sealing device 3 is located on plummer, with plummer about 1
Make-up seals to form annular seal space 4.Filled with inert gas or nitrogen in annular seal space 4.
Further, above-mentioned sealing device 3 is made of metal material, such as steel or copper, can bear certain air pressure.It is close
Seal apparatus 3 is the shape to match with plummer 1, and inside dimension is more than the diameter of wafer 2, can cover wafer 2.For example, it holds
Microscope carrier 1 is circle, then sealing device 3 is circle, and internal diameter is more than the diameter of wafer 2.It is close in another optional embodiment
Seal apparatus 3 can also be the shape of set of mismatching with plummer 1, as long as its inside dimension is more than the diameter of wafer 2, can cover crystalline substance
Circle 2.For example, plummer 1 is circle, then for sealing device 3 for that can be square, any one length of side of opening portion be more than crystalline substance
The diameter of circle 2；Or plummer 1 is square, then for sealing device 3 for that can be circular, internal diameter be more than the diameter of wafer 2.
In second embodiment of the present invention, first embodiment is improved.As shown in figure 3, it is embodied in：It is close
Seal apparatus 3 is sealed buckle using seal assembly 5 with plummer 1, it is preferable that the seal assembly 5 is O shape rubber
Circle, it is further preferable that seal assembly 5 is O-shaped rubber ring.Optionally, the seal assembly 5 is fixed on plummer 1,
5 top of fixation kit offer with 3 corresponding groove 51 of sealing device, as shown in figure 4, work when seal assembly 3 lower edge insert
Enter into groove 51, further strengthen the effect of sealing.
In another optional embodiment, seal assembly 5 is fixed at the lower edge of sealing device 3, seal assembly 5
Lower part offer with 3 corresponding groove 52 of sealing device, plummer 1 be equipped with 52 corresponding card slot 11 of groove, such as Fig. 5 institutes
Show, the groove 51 of lower edge of seal assembly 3 links closely with the card slot 11 on plummer 1 during work, further strengthens the effect of sealing.
It is more highly preferred in the present invention in embodiment, the above embodiment is further improved.As shown in fig. 6, institute
It states and gas input device 6 is installed on sealing device 3, the gas input device 6 can be sprayed by being arranged on the gas of its underpart
The injection gas 7 in annular seal space 4 of mouth 61.The gas 7 is inert gas or nitrogen, most preferably, gas 7 is nitrogen.
Set-up mode on above-mentioned gas input unit 6 illustrates to fill in sealing in attached drawing 6 there are a variety of ways of realization
The situation of 3 top installation gas input device 6 is put, and in fact, attached set-up mode shown in Fig. 7 will be more highly preferred to.Reference
Attached drawing 7, the top of input unit 6 through sealing device 3 extend down, the past sealing of the gas nozzle 61 by being arranged on its underpart
Injection gas in chamber 4.Because input unit 6 is arranged on 3 center of top of sealing device, and extends close to wafer down, injecting
During gas 7, gas 7 will apply the upper surface of wafer 2 certain pressure N so that the middle body of wafer 2 is first bonded plummer
1 and air-flow that nozzle 61 is avoided to spray into is too fast and wafer 2 is caused to be blown off plummer 1.
Attached drawing 8 shows the structure chart of another gas input device.In this embodiment, gas input device 6 is set
Put the top side wall in sealing device 3.The gas input device 6 can be one or multiple, such as attached drawing 8
Upper left illustrates the embodiment of 4 gas input devices 6, and the upper right portion of attached drawing 8 illustrates 8 gas input dresses
Put 6 embodiment.When 3 top side wall of sealing device is equipped with multiple gas input devices 6, multiple gas input devices 6
It can be uniformly distributed along the top side wall of sealing device 3, for example, when sealing device 3 is circular, multiple gas input devices 6
It can circumferentially equiangularly spaced distribution；When sealing device 3 is square, gas input device 6 can be 4 or 4
It is several again, it is respectively uniformly distributed on each square side.Be equipped with gas guiding plate 8 in sealing device 3, gas guiding plate with it is close
The junction of seal apparatus 3 is less than the gas nozzle of gas input device 6.Directing plate 8 prolongs from sealing device week along in annular seal space 4
It stretches, in horn-like or in inverted cone tubular, the opening of its underpart is positioned at the overcentre of disk 2.Gas input device 6
Gas nozzle 61 spray gas 7, gas 7 by gas guiding plate 8 guiding, from the lower opening of directing plate 8 to wafer 2
Upper surface applies certain pressure N so that the air-flow that the middle body of wafer 2 is first bonded plummer 1 and nozzle 61 is avoided to spray into
It is too fast and wafer 2 is caused to be blown off plummer 1.
Compared with Fig. 7 embodiments, embodiment illustrated in fig. 8 is more excellent, is mainly reflected in：As shown in figure 9, gas
After body 7 is injected into annular seal space 4, by the guiding of directing plate 8 after its lower opening applies pressure to wafer 2, gas 7 continues
Toward the perimeter of wafer 2, and continue to apply pressure to wafer 2 from inside to outside, continuing wafer 2 pressure makes its smooth simultaneously
It is bonded plummer 1.Due to the isolation of directing plate 8, the former annular seal space 4 for being forms two chambers, and the chamber 41 close to 2 part of disk is right
The warpage of disk 2 can preferably play the role of smooth, and gas 7 encounters the inner wall of sealing device 3 along after 2 perimeter of wafer,
The lower part of directing plate 8 is encountered after further up flowing, and further flow down is persistently smooth so as to be carried out to disk 2.
It is more highly preferred in the present invention in embodiment, the above embodiment is further improved.As shown in Figure 10, institute
Plummer lower part is stated equipped with gas extraction arrangement 9, gas extraction arrangement 9 is connected with plummer 1.Sealing is injected into gas 7
First start the air between the extraction wafer 2 of warpage of gas extraction arrangement 9 and plummer 1 before chamber 4.Gas extraction arrangement 9 can
To be one or multiple, the bottom of plummer 1 is evenly distributed on centered on a disk.
Further, such as Figure 11,3 top of sealing device is provided with mobile arm 11, during work, once plummer is because of wafer
Warpage and can not normal sorption when, sealing device 3 is moved on plummer by mobile arm 11 with dynamic sealing device 3, and is pushed
Seal cavity is formed with plummer, gas input device 6 is opened at this time and forms certain high pressure, compressing disk docile is in plummer
On；Optionally, the gas extraction arrangement 9 that can first open 1 lower section of plummer carries out disk absorption or in the same of injection gas 7
The gas extraction arrangement 9 of 1 lower section of Shi Kaiqi plummers carries out disk absorption, so as to can proceed with subsequent technique.
In an optional embodiment, as shown in figure 12, be provided with side wall 12 on plummer 1, the side wall 12 with
Plummer 1 is integrally formed, and mobile arm 11 is connected with epicoele cover board 13.During work, once plummer can not due to silicon wafer warpage
During normal sorption, mobile arm 11 drives epicoele cover board 13 that epicoele cover board 13 is moved to the side wall 12 on plummer 1, and pushes
With plummer formed seal cavity, at this time open gas input device 6 formed certain high pressure (structure of gas input device and
Position can be identical with Fig. 6 or Fig. 7), compressing disk docile is on plummer；Optionally, 1 lower section of plummer can first be opened
Gas extraction arrangement 9 carries out disk absorption or the gas extraction arrangement 9 below plummer 1 is opened while gas 7 are injected
Carry out disk absorption.
On the other hand, gas input device 6 may be provided on the side wall 12 on plummer 1.The gas input device 6 can
To be one or multiple.Gas guiding plate can be equipped on side wall 12, the junction of gas guiding plate and side wall 12 is less than
The gas nozzle of gas input device 6.Directing plate extends from sealing device week along in annular seal space, in horn-like, Huo Zhecheng
Inverted cone tubular, the opening of its underpart are located at the overcentre of disk 2.The gas nozzle 61 of gas input device 6 sprays gas,
Gas passes through the guiding of gas guiding plate 8, applies certain pressure N to the upper surface of wafer 2 from the lower opening of directing plate 8,
So that the middle body of wafer 2 is first bonded plummer 1 and avoids the air-flow of the penetrating of nozzle 61 too fast and wafer 2 is caused to be blown off and is held
Microscope carrier 1.
In another embodiment of the present invention, a kind of silicon wafer warpage processing method is provided, is comprised the following steps：
By wafer as on plummer；
Sealed environment is formed based on plummer；
Pressure is applied to wafer upper surface using gas.
The sealed environment for right sealing device 3 and plummer about 1 make-up seal the annular seal space 4 to be formed.The gas
For inert gas or nitrogen.
It is that the gas input device 6 on sealing device 3 is by being arranged on it to apply pressure to wafer upper surface using gas
The gas nozzle 61 of lower part injection gas 7 in annular seal space 4.The gas input device 6 can be one or more
It is a.Optionally, the gas input device 6 is arranged on the top side wall of sealing device 3.
Preferably, it is secondary pressurized to apply pressure to wafer upper surface using gas.Gas is equipped in sealing device 3 to guide
The junction of plate 8, gas guiding plate and sealing device 3 is less than the gas nozzle of gas input device 6.Directing plate 8 is filled from sealing
Week is put along toward extension in annular seal space 4, in horn-like or in inverted cone tubular, the opening of its underpart is located at the center of disk 2
Top.It is pressurised into inflating pressure for the first time：The gas nozzle 61 of gas input device 6 sprays gas 7, and gas 7 draws by gas
The guiding of guide plate 8 applies certain pressure N so that the center of wafer 2 from the lower opening of directing plate 8 to the upper surface of wafer 2
The air-flow that part is first bonded plummer 1 and nozzle 61 is avoided to spray into is too fast and wafer 2 is caused to be blown off plummer 1.Add for the second time
It presses to pressurize naturally：After gas 7 is injected into annular seal space 4, wafer 2 is applied from its lower opening by the guiding of directing plate 8
After pressure, gas 7 continues the perimeter toward wafer 2, and continues to apply pressure to wafer 2 from inside to outside, wafer 2 is continued into
Row pressure makes its smooth and is bonded plummer 1.Due to the isolation of directing plate 8, the former annular seal space 4 for being forms two chambers, close to
The chamber 41 of 2 part of disk can preferably play the role of the warpage of disk 2 smooth, and gas 7 is encountered along after 2 perimeter of wafer
The inner wall of sealing device 3 encounters the lower part of directing plate 8 after further up flowing, and further flow down is so as to disk 2
It carries out persistently smooth.
The above method is improved in another embodiment of the present invention, in this embodiment, in foregoing side
The step of method, is based on plummer and is formed before sealed environment, further includes：It is carried out by the gas extraction arrangement 9 of 1 lower section of plummer
Air extracts, and increases the adsoptivity of disk and plummer.
The above method is improved in another embodiment of the present invention, in this embodiment, in foregoing side
The step of method, is based on further including after plummer forms sealed environment：Sky is carried out by the gas extraction arrangement 9 of 1 lower section of plummer
Gas extracts, and increases the adsoptivity of disk and plummer.Or the gas opened while gas 7 are injected below plummer 1 is taken out
Device 9 is taken to carry out disk absorption.
The present invention can bring following advantageous effect：The present invention silicon wafer warpage processing unit it is simple and practical in structure；It is logical
Absorption dynamics of the wafer to plummer can be improved by crossing the input of gas and extraction, and the mode of gas pressurized is rationally efficient, can keep away
The each side risk that manpower-free's operation is brought, and the warpage disk that can finally will be unable to continue normal process is accomplished work
Skill.
The preferred embodiment of the present invention has shown and described in above description, as previously described, it should be understood that the present invention is not office
Be limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations, modification and
Environment, and can be changed in the scope of the invention is set forth herein by the technology or knowledge of above-mentioned introduction or association area
It is dynamic.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention, then it all should be appended by the present invention
In scope of the claims.
Claims (25)
1. a kind of device of silicon wafer warpage processing, including plummer (1), occur warpage wafer (2) be located at plummer (1) it
On；It is characterized in that, it further includes：Sealing device (3) on plummer (1), the sealing device (3) and plummer (1)
Upper and lower make-up seals to form annular seal space (4)；Gas input device (6), the gas input are installed on the sealing device (3)
Device (6) lower part is provided with gas nozzle (61)；Gas is sprayed by the gas nozzle (61), and then the wafer is applied
Towards the pressure in the plummer direction；Gas guiding plate (8), the gas guiding plate are additionally provided in the sealing device (3)
(8) it is less than the gas nozzle (61) of the gas input device (6), the directing plate with the junction of the sealing device (3)
(8) from sealing device week along the extension in the annular seal space (4), in horn-like or in inverted cone tubular, the opening position of its underpart
Overcentre in disk (2).
2. the device of silicon wafer warpage processing as described in claim 1, it is characterised in that：Filled with inert gas in annular seal space (4)
Or nitrogen.
3. the device of silicon wafer warpage processing as claimed in claim 1 or 2, it is characterised in that：The sealing device (3) is by metal
Material is made.
4. the device of silicon wafer warpage processing as claimed in claim 3, it is characterised in that：Sealing device (3) be and plummer (1)
The shape to match, inside dimension are more than the diameter of wafer (2).
5. the device of silicon wafer warpage processing as claimed in claim 4, it is characterised in that：Sealing device (3) and plummer (1)
Seal assembly (5) is provided with to buckle.
6. the device of silicon wafer warpage processing as claimed in claim 5, it is characterised in that：The seal assembly (5) is O shape rubber
Circle.
7. the device of silicon wafer warpage processing as claimed in claim 6, it is characterised in that：Seal assembly (5) fixed setting
On plummer (1), seal assembly (5) top offers groove (51) corresponding with sealing device (3).
8. the device of silicon wafer warpage processing as claimed in claim 5, it is characterised in that：Seal assembly (5) fixed setting
Lower edge in sealing device (3), seal assembly (5) lower part offer groove (52) corresponding with sealing device (3), plummer
(1) it is equipped with and groove (52) corresponding card slot (11).
9. the device of the silicon wafer warpage processing as described in claim 1-2,4-8 any one, it is characterised in that：Such as right
It is required that the device of the silicon wafer warpage processing described in 1, it is characterised in that：The gas input device (6) passes through sealing device (3)
Top is extended to down in annular seal space (4).
10. the device of silicon wafer warpage processing as described in claim 1, it is characterised in that：The gas input device (6) is set
Top side wall in sealing device (3).
11. the device of silicon wafer warpage processing as claimed in claim 10, it is characterised in that：The gas input device (6) is extremely
It is less one, is uniformly distributed along the top side wall of sealing device (3).
12. the device of silicon wafer warpage processing as described in claim 1, it is characterised in that：Directing plate (8) by annular seal space (4) every
From two chambers.
13. the device of the silicon wafer warpage processing as described in claim 1-2,4-8,10-12 any one, it is characterised in that：Institute
Plummer (1) lower part is stated equipped with gas extraction arrangement (9), gas extraction arrangement (9) is connected with plummer (1).
14. the device of silicon wafer warpage processing as described in claim 1, it is characterised in that：It is set at the top of the sealing device (3)
There is mobile arm (11).
15. a kind of device of silicon wafer warpage processing, including plummer (1), occur warpage wafer (2) be located at plummer (1) it
On；It is characterized in that, being provided with side wall (12) on the plummer (1), side wall (12) is equipped with matched epicoele cover board
(13), there is gas input device (6) on the epicoele cover board (13), gas input device (6) lower part is provided with gas spray
Mouth (61)；Gas is sprayed by the gas nozzle (6), and then applies the pressure towards the plummer direction to the wafer
Power；The side wall (12) is equipped with gas guiding plate, and the junction of gas guiding plate and side wall is less than the gas of gas input device 6
Body nozzle；Directing plate extends from sealing device week along in annular seal space, in horn-like or in inverted cone tubular, its underpart
Opening is positioned at the overcentre of disk (2).
16. the device of silicon wafer warpage processing as claimed in claim 15, it is characterised in that：The side wall (12) and plummer
(1) it is integrally formed, epicoele cover board (13) is connected with mobile arm (11).
17. the device of silicon wafer warpage processing as claimed in claim 15, it is characterised in that：Plummer (1) lower part is equipped with
Gas extraction arrangement (9), gas extraction arrangement (9) are connected with plummer (1).
18. the device of silicon wafer warpage processing as claimed in claim 15, it is characterised in that：The gas input device (6) sets
It puts on the side wall (12) on plummer (1).
19. the device of silicon wafer warpage processing as claimed in claim 15, it is characterised in that：The gas input device (6) is extremely
It is one less.
20. a kind of silicon wafer warpage processing method, comprises the following steps：
Wafer is placed on plummer；
Annular seal space is formed using make-up above and below sealing device and the plummer, wherein, there is gas input on the sealing device
Device, the gas input device lower part are provided with gas nozzle；Gas is sprayed by the gas nozzle, and then to the crystalline substance
Circle applies the pressure towards the plummer direction；Wherein, the gas is sprayed by the gas nozzle, and then to the crystalline substance
The pressure that circle applies towards the plummer direction is secondary pressurized, and being pressurised into inflating pressure for the first time is：Gas input device
(6) gas nozzle (61) sprays gas (7), and gas (7) passes through the guiding of gas guiding plate (8), opened under directing plate (8)
Certain pressure N is applied to the upper surface of wafer (2) at mouthful；It is pressurised into for the second time：After gas (7) is injected into annular seal space (4),
By the guiding of directing plate (8) after its lower opening applies pressure to wafer (2), gas (7) continues the periphery toward wafer (2)
Flowing, and continue to apply pressure to wafer (2) from inside to outside.
21. silicon wafer warpage processing method as claimed in claim 20, it is characterised in that：The gas is inert gas or nitrogen
Gas.
22. silicon wafer warpage processing method as claimed in claim 20, it is characterised in that：The gas input device (6) can be with
It it is one or multiple.
23. silicon wafer warpage processing method as claimed in claim 20, it is characterised in that：The gas input device (6) is set
Top side wall in sealing device (3).
24. the silicon wafer warpage processing method as described in claim 20-23 any one, it is characterised in that：It is based on holding in step
Microscope carrier is formed before sealed environment, is further included：Air extraction is carried out by the gas extraction arrangement (9) below plummer (1).
25. the silicon wafer warpage processing method as described in claim 20-23 any one, it is characterised in that：It is based on holding in step
Microscope carrier further includes after forming sealed environment：Air extraction is carried out by the gas extraction arrangement (9) below plummer (1).
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| CN107452643B (en) * | 2016-05-31 | 2020-11-13 | 弘塑科技股份有限公司 | Substrate flattening apparatus and semiconductor manufacturing method using the same |
| CN107685886A (en) * | 2016-08-04 | 2018-02-13 | 佛山市宝索机械制造有限公司 | Wrap up the method and device of paper roll |
| CN110320758B (en) * | 2018-03-30 | 2021-06-29 | 上海微电子装备（集团）股份有限公司 | Substrate edge protection device, photoetching equipment and protection method |
| JP7093693B2 (en) * | 2018-07-13 | 2022-06-30 | 東京エレクトロン株式会社 | Heat treatment equipment and substrate slip detection method |
| CN109285807B (en) * | 2018-09-28 | 2023-01-20 | 上海微松工业自动化有限公司 | Wafer flattening and fixing equipment |
| CN109256356B (en) * | 2018-09-28 | 2023-05-02 | 上海微松工业自动化有限公司 | Wafer leveling and fixing device |
| CN109300809B (en) * | 2018-09-28 | 2021-10-26 | 上海微松工业自动化有限公司 | Wafer ball mounting packaging system |
| CN109273399B (en) * | 2018-09-28 | 2023-02-10 | 上海微松工业自动化有限公司 | Leveling and fixing device for 12-inch wafer |
| CN109273398B (en) * | 2018-09-28 | 2023-01-20 | 上海微松工业自动化有限公司 | Wafer flattening and fixing device |
| CN109280904A (en) * | 2018-11-27 | 2019-01-29 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to lattice mismatched structures epitaxial growth |
| JP6875357B2 (en) * | 2018-11-29 | 2021-05-26 | 株式会社Ｓｃｒｅｅｎホールディングス | Board holding device, board processing device and board holding method |
| CN110517968B (en) * | 2019-08-19 | 2022-12-20 | 西安奕斯伟材料科技有限公司 | Warping degree control method and device |
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| JP5794194B2 (en) * | 2012-04-19 | 2015-10-14 | 東京エレクトロン株式会社 | Substrate processing equipment |
| US9576830B2 (en) * | 2012-05-18 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for adjusting wafer warpage |
| CN103545169A (en) * | 2012-07-11 | 2014-01-29 | 上海华虹Nec电子有限公司 | Method for preventing wafer from buckling deformation |
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