CN104269370A - Device for improving wafer edge defect - Google Patents
Device for improving wafer edge defect Download PDFInfo
- Publication number
- CN104269370A CN104269370A CN201410440477.1A CN201410440477A CN104269370A CN 104269370 A CN104269370 A CN 104269370A CN 201410440477 A CN201410440477 A CN 201410440477A CN 104269370 A CN104269370 A CN 104269370A
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- edge
- pedestal
- round fringes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the field of thin film deposition, in particular to a device for improving a wafer edge defect. The device comprises a base for containing a wafer. Blow holes are formed around the edge of the base. When the wafer is placed on the base for the thin film deposition technology, gas is blown to the edge of the wafer through the blow holes so as to improve the uniformity of the thickness of a thin film on the surface of the edge of the wafer, the defects formed when the edge of the wafer is likely to be peeled and fall down to an integrated circuit area due to the excessively thick wafer edge are reduced, the product yield is effectively improved, unnecessary cleaning processes are avoided, manpower and material resources are saved, and the product production efficiency is improved.
Description
Technical field
The present invention relates to thin film deposition field, be specifically related to a kind of device improving defects of wafer edge.
Background technology
Along with the development of integrated circuit technology, wafer specifications is gradually to large scale development, and 12 cun of main flows becoming IC manufacturing gradually, future even can develop into more than 18 cun and 18 cun.The expansion of wafer size causes the expansion of crystal round fringes area accordingly, seems more important to the control of defects of wafer edge.
So-called defects of wafer edge, refer to that film (film that particularly some adhesions are poor) is after crystal round fringes accumulation (generally needing through thin film deposition several times) to a certain extent, peel off under the effect of internal stress or external force, if drop to the device region on wafer, just become the defect affecting product yield, serious defect even can cause product rejection.As shown in Figure 1, after thin film deposition processes after a while, because edge response contact angle is larger, therefore can the thicker film of deposit thickness, the film thickness in other regions marginal position place that compares is then thinner.Traditional defects of wafer edge control method by the mode at cleaning wafer edge, possible source of peeling off is removed, owing to needing to increase special angle of inclination cleaning (bevel clean) technique, therefore can increase the complexity of technological process, add manufacturing cost simultaneously.
Fig. 2 is the schematic diagram of wafer in reaction chamber in prior art, and Fig. 3 is the schematic diagram of heating base in prior art.In chamber 150, be provided with the pedestal 100 that has heating function, pedestal 100 be placed with wafer 101.Pedestal 100 is provided with a groove (wafer pocket), places wafer 101.In deposition process, radio frequency produces plasma gas (plasma) and passes into in chamber 150, and utilizes pedestal 100 pairs of wafers 101 to heat, to form thin film on surface.But in this process, the film thickness at wafer 101 edge generally can be thicker, form the structure shown in Fig. 1, along with constantly carrying out of reaction, the film of edge can be more and more thicker, and then may produce and peel off and the device region likely fallen in wafer, and then affect product yield, even if do not have generation to peel off, owing to there is larger otherness in the film thickness of crystal round fringes and middle part film thickness, therefore can cause certain influence to its device performance, and be all above those skilled in the art be reluctant to see.
Summary of the invention
The invention provides a kind of device improving defects of wafer edge, when carrying out thin film deposition, by purging inert gas to crystal round fringes, improve the thickness evenness of crystal column surface deposit film, in order to realize this technique effect, the invention discloses a kind of device improving defects of wafer edge, it comprises: one for placing the pedestal of wafer, and described susceptor edges is around being provided with gas hole;
Wafer is placed on described pedestal carries out thin film deposition processes time, by described gas hole to described crystal round fringes purge gas, to improve the uniformity of crystal round fringes surface film thickness.
Above-mentioned device, wherein, is provided with a cavity, is purged by the gas in cavity by described gas hole to crystal round fringes in described pedestal.
Above-mentioned device, wherein, the external gas transfer pipeline of described cavity, described gas transfer pipeline is for carrying in inert gas to described cavity.
Above-mentioned device, wherein, described inert gas is nitrogen.
Above-mentioned device, wherein, described susceptor edges is lower than described pedestal central region.
Above-mentioned device, wherein, be embedded with electrode, heater and thermocouple in described pedestal, and described heater is evenly located in described pedestal.
Above-mentioned device, wherein, described gas hole purges described crystal round fringes surface with non-parallel angle.
Above-mentioned device, wherein, described gas hole purges described crystal round fringes surface with vertical angle.
Adopting device of the present invention effectively to improve is carrying out in thin film deposition processes, the uniformity of the film thickness of crystal round fringes and other region overlay, reduces the generation of defect, can reduce unnecessary cleaning process simultaneously, save manpower and materials, be conducive to improving production efficiency.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more obvious.Mark identical in whole accompanying drawing indicates identical part.Deliberately proportionally do not draw accompanying drawing, focus on purport of the present invention is shown.
Fig. 1 is the schematic diagram being greater than central region thickness at crystal column surface deposit film back edge film thickness;
Fig. 2 is the schematic diagram of wafer in reaction chamber in prior art;
Fig. 3 is the schematic diagram of heating base in prior art;
Fig. 4 is a kind of end view improving the device of defects of wafer edge provided by the invention;
Fig. 5 is a kind of vertical view improving defects of wafer edge provided by the invention;
Fig. 6 adopts the schematic diagram of the present invention after crystal column surface deposit film.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, to explain technical scheme of the present invention.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other execution modes.
The invention provides a kind of device improving defects of wafer edge, with reference to shown in Fig. 4 and Fig. 5, Fig. 4 is the end view of this device, Fig. 5 is the vertical view of this device, and it comprises pedestal 100, and this pedestal 100 is for placing wafer 101, pedestal frontside edge is around being provided with gas hole 109, wafer is placed on pedestal carries out thin film deposition processes time, by gas hole 109 to crystal round fringes purge gas, to improve the uniformity of crystal round fringes surface film thickness.
In the present invention, one preferably but the execution mode not merely limited to is in pedestal 100, be provided with a cavity 200, purged at the edge of the gas in cavity 200 to wafer 101 by gas hole 109.Simultaneously, the external gas transfer pipeline 110 of this cavity 200, by this gas transfer pipeline 110 can carry with reaction chamber carry out the inert gas of process compatible in cavity 200, the edge of wafer 101 afterwards by gas hole 109 pairs of pedestals 100 are placed purges.Selecting inert gas can at utmost avoid causing negative effect because passing into unnecessary gas to reaction at this, also can play the effect regulating gas homogeneity in chamber pressure and chamber simultaneously.In actual mechanical process, the set basis actual conditions of the gas flow that gas transfer pipeline 110 is carried are adjustable, and object ensures crystal round fringes not deposit film (or as far as possible depositing less), and the thin film deposition of wafer central region is unaffected simultaneously.Preferably, this inert gas can select nitrogen (N
2), nitrogen is applied to the every field of semiconductor production already, and Technical comparing is compatible, and cost is also lower simultaneously.But it will be appreciated by those skilled in the art that and select nitrogen to be only one preferably execution mode at this, other inert gases also can be adopted in a practical situation to pass into impact be there is no on the present invention, not repeat them here.
In the present invention, one preferably but the execution mode not merely limited to is that, when purging the edge of wafer 101, gas hole 109 purges wafer 101 edge surface with non-parallel angle, further preferred, purge gas and wafer 101 edge surface perpendicular.Perpendicular by the gas and wafer 101 edge surface that ensure purging, and then strengthen purge gas to the purging effort on wafer 101 surface.
Continue referring to Fig. 4, the edge of this pedestal 100 is lower than the middle top region of pedestal 100, form a boss, pedestal 100 end face be different from conventional art is provided with depression (i.e. wafer pocket), pedestal of the present invention can increase the contact area of wafer 101 edge and purge gas more fully, and then further improves the uniformity of film thickness of crystal round fringes.
Electrode (not shown), heater 105 and thermocouple 107 is embedded with in pedestal 100.Electrode is by earth connection 108 ground connection (GND); Heater 105 is evenly located in pedestal 100, and external heating cable 106, for heating wafer 101; And in the process of heating, utilize thermocouple 107 to detect real-time temperature, avoid producing because temperature is too high or too low and then affect normal process.
The direction of arrow shown in Fig. 4 is the direction that inert gas flows in cavity 200, when carrying out thin film deposition processes, simultaneously by the edge purging inert gas of air vent hole to wafer 101, even if constantly carrying out therefore along with reaction, film thickness and the middle part surface film thickness of crystal round fringes also can not produce larger otherness, and then be conducive to reducing because the film of crystal round fringes is thicker thus be peeling and fall to the defect that integrated circuit district formed, improving product yield.
The silicon nitride such as depositing 50nm thickness with PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) is example, and key reaction gas is NH
3and SiH
4.Under traditional depositional mode, the central region of wafer will deposit the silicon nitride film of about 50nm, and crystal round fringes is larger owing to reacting contact angle, passing through and measuring its thickness is 60nm, constantly carrying out, through other follow-up thin film deposition process simultaneously along with reaction, the film of crystal round fringes will be more and more thicker, and becoming defect source gradually, the film at marginal position place produces and peels off and wither and fall to circuit region (such as static memory circuit region), defines defect.And by technical method that the present invention proposes, only need flow into a certain amount of nitrogen in the body transfer pipeline that air vent hole is corresponding, to purge crystal round fringes, and then improve the uniformity of crystal column surface position deposited film thickness, after technique completes, form the structure shown in Fig. 6, the film thickness at its marginal position place can not be blocked up, and then decrease the situation of defect generation.
In sum, owing to present invention employs as above technical scheme, when carrying out thin film deposition, inert gas is purged toward crystal round fringes by gas hole, and then effectively improve in thin film deposition processes, the problem that in the middle part of the film thickness that crystal round fringes covers and wafer, film thickness difference is excessive, and then decrease because crystal round fringes film thickness is blocked up thus easily peel off and fall the defect formed to integrated circuit district, effectively improve product yield, avoid unnecessary cleaning process, save human and material resources, improve the production efficiency of product.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. improve a device for defects of wafer edge, it is characterized in that, described device comprises one for placing the pedestal of wafer, and described susceptor edges is around being provided with gas hole;
Wafer is placed on described pedestal carries out thin film deposition processes time, by described gas hole to described crystal round fringes purge gas, to improve the uniformity of crystal round fringes surface film thickness.
2. device as claimed in claim 1, be is characterized in that, be provided with a cavity in described pedestal, purged by the gas in cavity by described gas hole to crystal round fringes.
3. device as claimed in claim 2, is characterized in that, the external gas transfer pipeline of described cavity, and described gas transfer pipeline is for carrying in inert gas to described cavity.
4. device as claimed in claim 3, it is characterized in that, described inert gas is nitrogen.
5. device as claimed in claim 1, it is characterized in that, described susceptor edges is lower than described pedestal central region.
6. device as claimed in claim 1, it is characterized in that, be embedded with electrode, heater and thermocouple in described pedestal, and described heater is evenly located in described pedestal.
7. device as claimed in claim 1, it is characterized in that, described gas hole purges described crystal round fringes surface with non-parallel angle.
8. device as claimed in claim 7, it is characterized in that, described gas hole purges described crystal round fringes surface with vertical angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410440477.1A CN104269370B (en) | 2014-09-01 | 2014-09-01 | Device for improving wafer edge defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410440477.1A CN104269370B (en) | 2014-09-01 | 2014-09-01 | Device for improving wafer edge defect |
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| CN104269370A true CN104269370A (en) | 2015-01-07 |
| CN104269370B CN104269370B (en) | 2017-05-17 |
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| CN201410440477.1A Active CN104269370B (en) | 2014-09-01 | 2014-09-01 | Device for improving wafer edge defect |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105040097A (en) * | 2015-06-30 | 2015-11-11 | 上海华力微电子有限公司 | Chemical vapor deposition technological cavity aiming at crystal edge of wafer and chemical vapor deposition method |
| CN108624955A (en) * | 2017-03-16 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and epitaxial growth equipment |
| CN110809818A (en) * | 2017-08-30 | 2020-02-18 | 株式会社国际电气 | Protective plate, substrate processing apparatus, and method for manufacturing semiconductor device |
| CN111235551A (en) * | 2020-01-20 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Susceptor for epitaxial apparatus and epitaxial growth apparatus |
| CN114075661A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Semiconductor deposition method and semiconductor deposition system |
| CN117877958A (en) * | 2024-03-12 | 2024-04-12 | 上海谙邦半导体设备有限公司 | Semiconductor processing equipment |
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| US6004631A (en) * | 1995-02-07 | 1999-12-21 | Seiko Epson Corporation | Apparatus and method of removing unnecessary matter and coating process using such method |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105040097A (en) * | 2015-06-30 | 2015-11-11 | 上海华力微电子有限公司 | Chemical vapor deposition technological cavity aiming at crystal edge of wafer and chemical vapor deposition method |
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| CN108624955A (en) * | 2017-03-16 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and epitaxial growth equipment |
| CN110809818A (en) * | 2017-08-30 | 2020-02-18 | 株式会社国际电气 | Protective plate, substrate processing apparatus, and method for manufacturing semiconductor device |
| CN110809818B (en) * | 2017-08-30 | 2023-07-11 | 株式会社国际电气 | Protective plate, substrate processing apparatus, and method for manufacturing semiconductor device |
| CN111235551A (en) * | 2020-01-20 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Susceptor for epitaxial apparatus and epitaxial growth apparatus |
| CN111235551B (en) * | 2020-01-20 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Susceptor for epitaxial apparatus and epitaxial growth apparatus |
| CN114075661A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Semiconductor deposition method and semiconductor deposition system |
| CN114075661B (en) * | 2020-08-14 | 2022-11-18 | 长鑫存储技术有限公司 | Semiconductor deposition method and semiconductor deposition system |
| CN117877958A (en) * | 2024-03-12 | 2024-04-12 | 上海谙邦半导体设备有限公司 | Semiconductor processing equipment |
| CN117877958B (en) * | 2024-03-12 | 2024-05-07 | 上海谙邦半导体设备有限公司 | Semiconductor processing equipment |
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| Publication number | Publication date |
|---|---|
| CN104269370B (en) | 2017-05-17 |
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