CN104418595A - Sialon ceramic target material production method - Google Patents
Sialon ceramic target material production method Download PDFInfo
- Publication number
- CN104418595A CN104418595A CN201310370661.9A CN201310370661A CN104418595A CN 104418595 A CN104418595 A CN 104418595A CN 201310370661 A CN201310370661 A CN 201310370661A CN 104418595 A CN104418595 A CN 104418595A
- Authority
- CN
- China
- Prior art keywords
- sialon ceramic
- ceramic target
- making method
- sialon
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The present invention provides a sialon ceramic target material production method, which comprises: providing raw material powders comprising silicon nitride, aluminum oxide, aluminum nitride, a sintering aid and an electric conduction agent, uniformly mixing the raw material powders, and carrying out a hot pressing sintering treatment to form the sialon ceramic target material. According to the present invention, the sialon ceramic prepared by adopting the method of the present invention has good electric conductivity and good thermal conductivity, such that the continuously-produced impulse spark discharge between the sialon ceramic and the moving electrode wire is enhanced in the line wire cutting process, the high temperature is instantaneously produced during the spark discharge, the etch removal on the contact position of the sialon ceramic and the electrode wire is accelerated, the cutting property of the sialon ceramic is improved, the smoothness of the cutting on the sialon ceramic is increased, and the mechanical processing precision of the sialon ceramic is increased.
Description
Technical field
The present invention relates to semi-conductor sputtering field, particularly a kind of making method of SiAlON ceramic target.
Background technology
Sai Long (sialon) is a kind of basic structural unit is (Si, Al) (O, N)
4tetrahedron material, it is commonly used in stupalith.SiAlON ceramic comprises α-sialon(Me
xsi
12-(m+n)al
m+n) O
nn
16-n, Me is metal ion, comprises yttrium etc.) and β-sialon(Si
6-Zal
zo
zn
8-Z) two kinds of plasmodiums.
Wherein, sialon pottery is silicon nitride (Si
3n
4) and aluminum oxide (Al
2o
3) sosoloid that at high temperature generates, while two kinds of sialon potteries inherit the concrete high rigidity of characteristic of the crystalline phase of silicon nitride and aluminum oxide two kinds of materials, wear resistance, also each tool characteristic.As α-sialon also has a heat-shock resistance, and β-sialon has better fracture toughness property compared to conventional ceramic.Sialon pottery has good heat, power, optical property, and stable chemical nature, be important inorganic materials.And the complex phase SiAlON ceramic be made up of α-sialon and β-sialon at high temperature also has high strength and high-tenacity concurrently.
Based on the mechanical property that sialon pottery is good, sialon pottery is usually used in the wear parts in the semiconducter device such as bearing, sealing-ring and optics, semi-conductor deviding device.Wherein, in semiconductor applications, sialon pottery forms the wear parts of the element such as optics, semi-conductor deviding device by vacuum magnetron sputtering coating film mode.More introduction about sialon pottery please refer to the Chinese patent literature that publication number is CN102307827A.
In vacuum magnetron sputtering coating film technique, sialon ceramic target is placed in the target cavity of sputtering base station, forms one deck nano level or micron-sized sialon ceramic membrane by ion sputtering mode on base material.Based on the accuracy requirement of the thickness of sialon ceramic membrane, the sialon ceramic target that vacuum magnetron sputtering coating film technique adopts must mate with the target cavity of sputtering machine table completely.
Existing sialon ceramic target manufacture craft, comprise target to make and mechanical process, first form target by techniques such as hot pressing (HP), (PLS) with no pressure, air pressure (GPS) and hot isotatic pressings (HIP), the structure realizing sialon ceramic target by mechanical workout modes such as Linear cut afterwards is accurately processed, thus when using and the target cavity of sputtering machine table match.
But carry out in Linear cut process at sialon ceramic target, usually occur the cracked situation of SiAlON ceramic target, and the deviation of the processing of sialon ceramic target is comparatively large, working accuracy is difficult to ensure, causes the yield rate of SiAlON ceramic target low.
Thus, that how to improve sialon pottery can cutting, is the problem that those skilled in the art need solution badly to improve sialon pottery cutting accuracy.
Summary of the invention
For solving the problem, the invention provides a kind of making method of SiAlON ceramic target, adopting the present invention to obtain SiAlON ceramic and being easy to mechanical workout, thus improving the machining accuracy of SiAlON ceramic target.
The making method of a kind of SiAlON ceramic target provided by the invention, comprising:
The raw material powder comprising silicon nitride, aluminum oxide, aluminium nitride, sintering agent and conductive agent is provided;
After being mixed by described raw material powder, carry out hot pressed sintering process, form SiAlON ceramic target.
Alternatively, described conductive agent is metal nitride.
Alternatively, described metal nitride is titanium nitride or tantalum nitride.
Alternatively, the weight content of described silicon nitride, aluminum oxide, aluminium nitride, sintering agent and conductive agent is: 45 ~ 60wt%, 2 ~ 10wt%, 2 ~ 5wt%, 5 ~ 10wt%, 30 ~ 45wt%.
Alternatively, described hot pressed sintering treatment process comprises:
1200 DEG C are heated to the speed of 5 ~ 10 DEG C/min;
Afterwards, 1300 ~ 1400 DEG C are heated to the speed of 1.5 ~ 3 DEG C/min;
Afterwards, 1450 ~ 1700 DEG C are heated to the speed of 4 ~ 6 DEG C/min;
With 0.3 ~ 0.5MPa/min speed persistent pressure, to presetting pressure, described default pressure is greater than 20MPa;
And be 1450 ~ 1700 DEG C in temperature, under presetting pressure conditions, heat-insulation pressure keeping heats 4 ~ 7h.
Alternatively, described default pressure is 20 ~ 30MPa.
Alternatively, described hot pressed sintering process is carried out under protective atmosphere.
Alternatively, described protective atmosphere comprises Ar, He or N
2atmosphere.
Alternatively, the method mixed by raw material powder is ball-milling technology.
Alternatively, described ball-milling technology comprises:
Described raw material powder is placed in ball grinder, after inserting dispersion medium, ball milling 16 ~ 24h.
Alternatively, described ball-milling technology comprises: using zirconium white or aluminum oxide as ball-milling medium.
Alternatively, described dispersion medium is dehydrated alcohol and/or glycerine.
Alternatively, also comprise: after described ball-milling technology, drying treatment is carried out to described raw material powder.
Alternatively, the temperature of described drying treatment is less than the boiling point of dispersion medium.
Compared with prior art, technical scheme of the present invention has the following advantages:
Conductive agent is added in silicon nitride, aluminum oxide, aluminium nitride, sintering agent, and the technique of SiAlON ceramic is obtained through hot pressed sintering process, effectively can improve the electroconductibility of SiAlON ceramic entirety, and after SiAlON ceramic passes into electric current, the good electroconductibility based on SiAlON ceramic entirety promotes the heat conductivility of SiAlON ceramic target.In such as filament cutting technique, good conduction and heat conductivility strengthen the spark discharge of the pulse feature constantly produced between SiAlON ceramic target and the wire electrode in moving, and when spark discharge instantaneous generation high temperature, accelerate the ablation of the contact site of SiAlON ceramic target and wire electrode, improve the cutting property of SiAlON ceramic target, improve the smoothness of cutting SiAlON ceramic target, thus promote the machining accuracy of SiAlON ceramic.
Accompanying drawing explanation
Fig. 1 is the schema of the making method of SiAlON ceramic target of the present invention;
Fig. 2 is that the present invention makes in SiAlON ceramic target process, adopts the embodiment schematic diagram of ball-milling technology mixing raw material;
Fig. 3 ~ Fig. 4 is that the present invention makes the embodiment schematic diagram using hot pressed sintering treatment process process target in SiAlON ceramic target process.
Embodiment
As described in background, in view of the mechanical property that SiAlON ceramic is good, at semiconductor applications, SiAlON ceramic film, as wear parts, the elements such as optics, semi-conductor deviding device is used widely.
But, usually there is the defects such as SiAlON ceramic target is cracked when SiAlON ceramic target carries out Linear cut, cause the cutting accuracy of SiAlON ceramic target to be difficult to ensure.Analyze its reason to ascribe to: in SiAlON ceramic target Linear cut process, SiAlON ceramic target connects the positive pole of high frequency pulse power supply, and wire electrode (as molybdenum filament) connects negative pole.When after high frequency pulse power supply energising, the spark discharge producing pulse feature is needed between SiAlON ceramic target and the wire electrode that move, and when spark discharge instantaneous generation high temperature heat source, thus on SiAlON ceramic target, the contact site contacted with wire electrode, by electrocorrosion, realizes the cutting of SiAlON ceramic target.
But existing SiAlON ceramic is dielectric materials, its conduction, heat conductivility are poor.In cutting on line process, after high frequency pulse power supply energising, electric current cannot be smooth and easy by SiAlON ceramic target, thus cannot produce the spark discharge of enough pulse features between SiAlON ceramic target and wire electrode, electrocorrosion is realized to SiAlON ceramic target, realizes SiAlON ceramic target and cut smoothly.
For this reason, the invention provides a kind of making method of SiAlON ceramic target, obtain the SiAlON ceramic target with good conductive and thermal conductivity, improve cutting smooth degree and the cutting processing precision of SiAlON ceramic target.
Below in conjunction with accompanying drawing, by specific embodiment, clear, complete description is carried out to technical scheme of the present invention.
First, shown in figure 1, perform step S1: provide the raw material powder comprising silicon nitride, aluminum oxide, aluminium nitride, sintering agent and conductive agent.Above-mentioned raw materials powder is for making SiAlON ceramic target.
In subsequent fabrication process, silicon nitride and aluminum oxide reaction make SiAlON ceramic.Wherein, during as made β-sialon, Z Si-N in silicon nitride is replaced by Z Al-O; When making α-sialon, n Si-N in silicon nitride is replaced by n Al-O, and m Si-N is replaced by m Al-N, and the electricity price that a rear replacement causes is uneven by x metal ions M e compensation.The structure that the SiAlON ceramic of final acquisition is concrete determines according to different material fiting ratios example.And the complex phase SiAlON ceramic be made up of α-sialon and β-sialon is according to material rate, there is above-mentioned reaction simultaneously.
Described sintering agent is chosen as La
2o
3, Y
2o
3and Al
2o
3.
Based on the material that silicon nitride is covalent bond type, thus SiAlON ceramic is caused to be difficult to densification in hot pressed sintering process.After inserting sintering agent in the feed, in hot pressed sintering process, part sintering agent is liquid phase by solid transformation, thus improves the compactness of the SiAlON ceramic target obtained by liquid phase sintering.
In the present embodiment, the preferred Y of described sintering agent
2o
3.Described Y
2o
3after liquid phase, with other raw material reactions of part, and make Y
2o
3with part other raw materials be liquid phase or molten state, with acceleration of sintering densification.
Described conductive agent can improve the conductivity of the SiAlON ceramic target of acquisition.Described conductive agent is chosen as metallic compound, is chosen as metal nitride further, as TiN and TaN.In sintering process, conductive agent can be interconnected as aluminium nitride, silicon nitride with feed composition by " metal-N " key, becomes the stable phase in ceramic target.
In the present embodiment, described conductive agent is TiN.
In the present embodiment, in described raw material powder, the weight content of silicon nitride, aluminum oxide, aluminium nitride, sintering agent and conductive agent is: 45 ~ 60wt%, 2 ~ 10wt%, 2 ~ 5wt%, 5 ~ 10wt%, 30 ~ 45wt%.Concrete ratio makes specific configuration according to the performance of the SiAlON ceramic that actual needs obtains.
In the present embodiment, in described raw material powder, the grain diameter of each component is chosen as 2 ~ 3 μm.
Continue with reference to shown in figure 1, perform step S2, raw material powder is mixed.
In the present embodiment, the hybrid technique adopted is chosen as ball-milling technology.
Wherein Fig. 2 illustrates ball-milling technology, specifically comprise: described raw material powder 10 is placed in ball grinder 20, after inserting dispersion medium (not shown) and ball-milling medium 30 to described ball grinder 20, ball milling 16 ~ 24h, makes each component in described raw material powder 10 mix.
Described ball-milling medium 30 particle diameter is far longer than each raw material powder particle diameter, in mechanical milling process, rocks described ball grinder 20, and ball-milling medium 30 is fully stirred in described raw material powder 10, thus each component in raw material powder is mixed.Described ball-milling medium 30 is chosen as aluminum oxide and zirconium white.
In the present embodiment, described ball-milling medium 30 is zirconium white.
Described dispersion medium is chosen as alcohols, arene etc. and has less capillary material, and described alcohols comprises ethanol, glycerine etc., and described arene material comprises benzene, toluene etc.In mechanical milling process, described dispersion medium effectively can reduce each intergranular adhesiveness in raw material powder, thus effectively disperses each raw material small-particle, makes each component mixing in raw material powder more even.
In the present embodiment, described dispersion medium is dehydrated alcohol, glycerine or both mixtures.
After each for described raw material powder component fully being mixed, carrying out drying treatment, for removing the dispersion medium added in described raw material powder 10 in described ball-milling technology, thus obtaining dry raw material powder.
The temperature that described dry treatment process adopts is less than the boiling point of dispersion medium, in drying treatment process, dispersion medium is slowly volatilized, avoid causing raw material to mix based on dispersion medium boiling uneven, thus damage is caused to equipment, and cause SiAlON ceramic target manufacture craft more loaded down with trivial details.
In the present embodiment, adopt dehydrated alcohol, glycerine or both mixtures as dispersion medium, the temperature that described dry treatment process adopts is 70 ~ 80 DEG C.
Continue with reference to shown in figure 1, after drying treatment obtains dry raw material powder, perform step S3, carry out hot pressed sintering process, form SiAlON ceramic target.
Concrete employing hot pressed sintering treatment process forms the process of SiAlON ceramic target with reference to figure 3 and Fig. 4.
As shown in Figure 3, after dried raw material powder 10 is loaded graphite jig 40, described graphite jig 40 is placed in vacuum sintering funace 50, carries out hot pressed sintering process.Wherein, described graphite jig 40 structure is according to the configuration settings of the SiAlON ceramic target that will be formed.
As shown in Figure 4, after hot pressed sintering process, obtained SiAlON ceramic target 11.
Particularly, described hot pressed sintering treatment process comprises:
Temperature rise period in early stage: heat up by room temperature is initial, regulate the heating rate of described vacuum sintering funace 50 to be 5 ~ 10 DEG C/min, until the temperature of described vacuum sintering funace 50 reaches to 1200 DEG C.In this stage, raw material powder form there will not be too large change, each component thermally equivalent of raw material powder can be made with the heating rate of 5 ~ 10 DEG C/min, stable to heat up;
Afterwards, enter the temperature rise period in mid-term, regulate heating rate 1.5 ~ 3 DEG C/min of described vacuum sintering funace 50, be chosen as 2 DEG C/about min.Relative to the described temperature rise period in early stage, in this stage, slow down the temperature rise rate of vacuum sintering funace, until 1300 ~ 1400 DEG C.After 1200 DEG C gradually in temperature-rise period, Si
3n
4start to occur phase transformation, during this, the speed of heating of 1.5 ~ 3 DEG C/min can make the α-Si of part
3n
4fully be transformed into β-Si
3n
4, other components and α-Si
3n
4with β-Si
3n
4in conjunction with forming the SiAlON ceramic target comprising α-sialon and β-sialon, and also effectively can improve the bonding strength of TiN and other components under these conditions, to improve the performance of SiAlON ceramic target.
In temperature rise period in mid-term, concrete intensification terminal and temperature rise rate can according in raw material powders, the content of each component and determining.
Finally, the temperature rise period in later stage is entered.Particularly, Si after 1300 ~ 1400 DEG C
3n
4complete phase transformation to transform, rising in the later stage temperature-rise period of 1400 ~ 1700 DEG C by 1300 ~ 1400 DEG C, can temperature rise rate be accelerated, being heated to heat preservation sintering temperature 1450 ~ 1700 DEG C with the hot speed of 4 ~ 6 DEG C/min, feed components is fully heated.
And progressively rising in heat preservation sintering temperature course by room temperature, correspondingly progressively strengthen the pressure in hot-pressed sintering furnace 50, until the pressure in described hot-pressed sintering furnace 50 is to presetting pressure.
In the present embodiment, described default pressure is greater than 20MPa and just can, be chosen as 20 ~ 30MPa further, described compression rate is controlled is made as 0.3 ~ 0.5MPa/min, at continuous pressure dwell, can effectively remove the gas produced in temperature-rise period in raw material, progressively pressurization realizes raw material compacting simultaneously, thus effectively improves the compactness of the final SiAlON ceramic target formed.
When the temperature in described vacuum sintering funace 50 reaches to 1450 ~ 1700 DEG C, after pressure reaches default pressure, heat-insulation pressure keeping heating 4 ~ 7h, thus form SiAlON ceramic target.
In hot pressed sintering process, after yttrium oxide and other feed composition of part form liquid phase or molten state, silicon nitride and aluminum oxide and aluminium nitride react, Si-N in silicon nitride is replaced by Al-O, Si-N is replaced by Al-N, and the uneven ruthenium ion of electricity price that a rear replacement causes compensates, thus form SiAlON ceramic.Titanium nitride is then evenly distributed in SiAlON ceramic, effectively can improve electroconductibility and the thermal conductivity of obtained SiAlON ceramic target.
Be greater than under 1700 DEG C of conditions, silicon nitride decomposes can become the form such as silicon oxide and nitrogen, not only reduce other component reaction in silicon nitride and raw material powder and form the probability of SiAlON ceramic, and the appearance of nitrogen can reduce the density of grand ceramic target.In the present embodiment, under 1450 ~ 1700 DEG C of conditions, coordinate under being greater than the pressure of 20MPa and carry out processing operation, while guaranteeing to obtain SiAlON ceramic target, effectively inhibit silicon nitride to decompose, thus improve the quality of the SiAlON ceramic target obtained.
By the above-mentioned step progressively heating up, boost, in the present embodiment, only need under 1450 ~ 1700 DEG C of conditions, under being greater than the condition of 20MPa, heat-insulation pressure keeping heats 4 ~ 7h, just density can be obtained up to 99%(testing method: GB3850-83 ≈ ISO3369-1975, dense sintering metallic substance and Wimet density inspect method) high-compactness SiAlON ceramic target, it meets magnetron sputtering requirement completely.Reach more than 1900 DEG C compared to existing temperature, the hot pressed sintering that pressure reaches 50 ~ 60MPa makes the technique of SiAlON ceramic target, and the present embodiment greatly reduces the cost of manufacture of SiAlON ceramic target, and for the requirement of equipment.
In the present embodiment, in described hot pressed sintering treating processes, also can pass into protective atmosphere in described vacuum sintering funace 50, to strengthen the stability of hot pressed sintering treating processes.
Described protective atmosphere is chosen as nitrogen, argon gas, helium etc.
In the present embodiment, described shielding gas is preferably nitrogen.Under hot conditions in hot pressed sintering process, silicon nitride there will be decomposition reaction and generates the component such as nitrogen and silicon oxide.After pass into nitrogen in described vacuum sintering funace 50, the content by strengthening nitrogen impels silicon nitride to resolve into the molecular balance generating nitrogen and silicon oxide and carries out to reverse direction, suppresses silicon nitride to resolve into the reaction of nitrogen and silicon oxide.Thus the gas volume in reduction reaction system, there is the defects such as pin hole in the SiAlON ceramic target avoided the formation of, thus improves the density of the SiAlON ceramic target formed.
It should be noted that, in other embodiments, again described graphite jig 40 is placed in before vacuum sintering funace 50 carries out hot pressed sintering, first can carries out cold pressing treatment in advance to the raw material powder 10 in described graphite jig 40, improve the compactness between raw material powder 10 in advance.
The SiAlON ceramic target 11 that the making method of the SiAlON ceramic target provided by the present embodiment is obtained, its density is up to 99%(testing method: GB3850-83 ≈ ISO3369-1975, dense sintering metallic substance and Wimet density inspect method), and there is good conduction, heat conductivility.Thus in filament cutting technique, strengthen the spark discharge effect of the pulse feature constantly produced between SiAlON ceramic target 11 and wire electrode, to accelerate the ablation of the contact site of SiAlON ceramic target 11 and wire electrode, thus improve the smoothness of cutting SiAlON ceramic target 11, the cutting property of effective raising SiAlON ceramic target 11, and then the machining accuracy improving SiAlON ceramic target 11.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (14)
1. a making method for SiAlON ceramic target, is characterized in that, comprising:
The raw material powder comprising silicon nitride, aluminum oxide, aluminium nitride, sintering agent and conductive agent is provided;
After being mixed by described raw material powder, carry out hot pressed sintering process, form SiAlON ceramic target.
2. the making method of SiAlON ceramic target according to claim 1, is characterized in that, described conductive agent is metal nitride.
3. the making method of SiAlON ceramic target according to claim 2, is characterized in that, described metal nitride is titanium nitride or tantalum nitride.
4. the making method of SiAlON ceramic target according to claim 1, it is characterized in that, the weight content of described silicon nitride, aluminum oxide, aluminium nitride, sintering agent and conductive agent is: 45 ~ 60wt%, 2 ~ 10wt%, 2 ~ 5wt%, 5 ~ 10wt%, 30 ~ 45wt%.
5. the making method of SiAlON ceramic target according to claim 1, is characterized in that, described hot pressed sintering treatment process comprises:
1200 DEG C are heated to the speed of 5 ~ 10 DEG C/min;
Afterwards, 1300 ~ 1400 DEG C are heated to the speed of 1.5 ~ 3 DEG C/min;
Afterwards, 1450 ~ 1700 DEG C are heated to the speed of 4 ~ 6 DEG C/min;
With 0.3 ~ 0.5MPa/min speed persistent pressure, to presetting pressure, described default pressure is greater than 20MPa;
And be 1450 ~ 1700 DEG C in temperature, under presetting pressure conditions, heat-insulation pressure keeping heats 4 ~ 7h.
6. the making method of SiAlON ceramic target according to claim 5, is characterized in that, described default pressure is 20 ~ 30MPa.
7. the making method of SiAlON ceramic target according to claim 1, is characterized in that, described hot pressed sintering process is carried out under protective atmosphere.
8. the making method of the SiAlON ceramic target stated according to claim 7, it is characterized in that, described protective atmosphere comprises Ar, He or N
2atmosphere.
9. the making method of SiAlON ceramic target according to claim 1, is characterized in that, the method mixed by raw material powder is ball-milling technology.
10. the making method of SiAlON ceramic target according to claim 9, is characterized in that, described ball-milling technology comprises:
Described raw material powder is placed in ball grinder, after inserting dispersion medium, ball milling 16 ~ 24h.
The making method of 11. SiAlON ceramic targets according to claim 10, it is characterized in that, described ball-milling technology comprises: using zirconium white or aluminum oxide as ball-milling medium.
The making method of 12. SiAlON ceramic targets according to claim 10, is characterized in that, described dispersion medium is dehydrated alcohol and/or glycerine.
The making method of 13. SiAlON ceramic targets according to claim 12, is characterized in that, also comprise:
After described ball-milling technology, drying treatment is carried out to described raw material powder.
14. according to the making method of SiAlON ceramic target according to claim 13, and it is characterized in that, the temperature of described drying treatment is less than the boiling point of dispersion medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310370661.9A CN104418595B (en) | 2013-08-22 | 2013-08-22 | A kind of manufacture method of Sialon ceramics target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310370661.9A CN104418595B (en) | 2013-08-22 | 2013-08-22 | A kind of manufacture method of Sialon ceramics target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104418595A true CN104418595A (en) | 2015-03-18 |
| CN104418595B CN104418595B (en) | 2016-12-28 |
Family
ID=52968808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310370661.9A Active CN104418595B (en) | 2013-08-22 | 2013-08-22 | A kind of manufacture method of Sialon ceramics target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104418595B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108840687A (en) * | 2018-07-26 | 2018-11-20 | 深圳市东川技术研究有限公司 | A kind of high-intensitive sintering process for matching grand new material |
| CN108863399A (en) * | 2018-07-26 | 2018-11-23 | 深圳市东川技术研究有限公司 | Match the sintering process of grand electric heating new material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19850597A1 (en) * | 1998-11-03 | 2000-05-04 | Ceramtec Ag | New alpha-sialon material, useful as a cutting material, in machine and equipment construction and in the chemical industry, has a sialon phase containing magnesium and yttrium, rare earth metal and-or calcium |
| CN1546429A (en) * | 2003-12-03 | 2004-11-17 | 中国科学院上海硅酸盐研究所 | Alpha sialon ceramic materials with high infrared transmittance and method for preparing same |
| CN101468918A (en) * | 2007-12-28 | 2009-07-01 | 北京有色金属研究总院 | High purity zirconium boride / hafnium boride and preparation of superhigh temperature ceramic target material |
| CN103233227A (en) * | 2013-05-16 | 2013-08-07 | 桂林电子科技大学 | Preparation method of composite ceramic layer with conductive property |
-
2013
- 2013-08-22 CN CN201310370661.9A patent/CN104418595B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19850597A1 (en) * | 1998-11-03 | 2000-05-04 | Ceramtec Ag | New alpha-sialon material, useful as a cutting material, in machine and equipment construction and in the chemical industry, has a sialon phase containing magnesium and yttrium, rare earth metal and-or calcium |
| CN1546429A (en) * | 2003-12-03 | 2004-11-17 | 中国科学院上海硅酸盐研究所 | Alpha sialon ceramic materials with high infrared transmittance and method for preparing same |
| CN101468918A (en) * | 2007-12-28 | 2009-07-01 | 北京有色金属研究总院 | High purity zirconium boride / hafnium boride and preparation of superhigh temperature ceramic target material |
| CN103233227A (en) * | 2013-05-16 | 2013-08-07 | 桂林电子科技大学 | Preparation method of composite ceramic layer with conductive property |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108840687A (en) * | 2018-07-26 | 2018-11-20 | 深圳市东川技术研究有限公司 | A kind of high-intensitive sintering process for matching grand new material |
| CN108863399A (en) * | 2018-07-26 | 2018-11-23 | 深圳市东川技术研究有限公司 | Match the sintering process of grand electric heating new material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104418595B (en) | 2016-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108947542B (en) | Direct flash-firing forming preparation method of ceramic powder raw material | |
| JP5836522B2 (en) | Method for manufacturing silicon nitride substrate | |
| CN113636844B (en) | Method for preparing high-strength high-thermal-conductivity silicon nitride ceramic through two-step sintering | |
| CN104045350B (en) | Method for preparing silicon nitride /silicon carbide ceramic composite by use of reaction sintering process | |
| CN115028460B (en) | Preparation method of high-heat-conductivity silicon nitride ceramic substrate | |
| KR102270157B1 (en) | Aluminum oxynitride ceramic heater and method for preparing the same | |
| JP7307769B2 (en) | RING-SHAPED PARTS FOR ETCHING APPARATUS AND METHOD FOR ETCHING SUBSTRATE USING THE SAME | |
| CN110002890A (en) | A kind of Cf/ HfC-SiC ultra-temperature ceramic-based composite material and preparation method thereof | |
| CN112723891B (en) | Lanthanum-calcium composite hexaboride polycrystalline cathode material and preparation method thereof | |
| CN105254306A (en) | Method for preparing high-thermal-conductivity silicon nitride ceramics | |
| CN104822223A (en) | Ceramic-based circuit board and preparation method thereof | |
| Lee et al. | Effect of heating rate on spark plasma sintering of a nanosized β‐Si3N4‐based powder | |
| CN112573926A (en) | Aluminum nitride conductor material and aluminum nitride full-ceramic heating structure device | |
| CN110357633B (en) | Method for rapidly preparing titanium-aluminum-carbon ceramic at room temperature | |
| CN104418595A (en) | Sialon ceramic target material production method | |
| JP2012121785A (en) | Method for producing ceramic joined body | |
| CN105819867B (en) | It is a kind of can electrical discharge machining and mechanical processing Si3N4-ZrSi2- BN diphase ceramic materials and preparation method | |
| CN101985396A (en) | Method for preparing aluminum nitride ceramic substrate by clinker slicing | |
| US6562418B2 (en) | Microwave processing of pressed boron powders for use as cathodes in vacuum arc sources | |
| Liu et al. | Effect of stacking pressure on the properties of Si3N4 ceramics fabricated by aqueous tape casting | |
| CN104831352A (en) | High-purity high-compactness (LaxSm1-x)B6 polycrystalline cathode material and preparation method thereof | |
| CN112750692A (en) | Composite sintered body and method for producing composite sintered body | |
| CN112811909A (en) | Method for preparing high-strength high-thermal-conductivity aluminum nitride through hot-pressing sintering | |
| CN109231996B (en) | Boron nitride-silicon nitride interlayer broadband wave-transmitting material and preparation method thereof | |
| JP5728684B2 (en) | Free-cutting ceramics and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191031 Address after: 315400 no.198 Anshan Road, Yuyao City, Ningbo City, Zhejiang Province Patentee after: Ningbo Jiangfeng Powder Metallurgy Co., Ltd Address before: 315400, No. 198, Mount Ann Road, state science and Technology Industrial Park, Ningbo, Zhejiang, Yuyao Patentee before: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. |
|
| TR01 | Transfer of patent right | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20150318 Assignee: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Assignor: Ningbo Jiangfeng Powder Metallurgy Co., Ltd Contract record no.: X2019330000048 Denomination of invention: Sialon ceramic target material production method Granted publication date: 20161228 License type: Exclusive License Record date: 20191203 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315400 no.198 Anshan Road, Yuyao City, Ningbo City, Zhejiang Province Patentee after: Ningbo Jiangfeng hot isostatic pressing technology Co.,Ltd. Address before: 315400 no.198 Anshan Road, Yuyao City, Ningbo City, Zhejiang Province Patentee before: Ningbo Jiangfeng Powder Metallurgy Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |