CN104418595B - A kind of manufacture method of Sialon ceramics target - Google Patents
A kind of manufacture method of Sialon ceramics target Download PDFInfo
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- CN104418595B CN104418595B CN201310370661.9A CN201310370661A CN104418595B CN 104418595 B CN104418595 B CN 104418595B CN 201310370661 A CN201310370661 A CN 201310370661A CN 104418595 B CN104418595 B CN 104418595B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000005245 sintering Methods 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910001884 aluminium oxide Inorganic materials 0.000 claims abstract description 17
- 239000006258 conductive agent Substances 0.000 claims abstract description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 238000000498 ball milling Methods 0.000 claims description 20
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 6
- 230000001681 protective Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 229960000935 Dehydrated Alcohol Drugs 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N Tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000002085 persistent Effects 0.000 claims description 2
- 239000002609 media Substances 0.000 claims 3
- 239000002612 dispersion media Substances 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 18
- 238000003754 machining Methods 0.000 abstract description 7
- 238000002679 ablation Methods 0.000 abstract description 3
- 238000005728 strengthening Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 229910007991 Si-N Inorganic materials 0.000 description 5
- 229910006294 Si—N Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910018516 Al—O Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910018509 Al—N Inorganic materials 0.000 description 2
- 241001120493 Arene Species 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitric oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 229910052813 nitrogen oxide Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- 230000001131 transforming Effects 0.000 description 2
- WKODDKLNZNVCSL-UHFFFAOYSA-N 1,3,2$l^{2},4$l^{2}-oxazadisiletidine Chemical compound N1[Si]O[Si]1 WKODDKLNZNVCSL-UHFFFAOYSA-N 0.000 description 1
- 210000001736 Capillaries Anatomy 0.000 description 1
- 239000005092 Ruthenium Substances 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000020127 ayran Nutrition 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium(0) Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010237 hybrid technique Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(III) oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- -1 ruthenium ion Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Abstract
The invention provides the manufacture method of a kind of Sialon ceramics target.Including: the material powder including silicon nitride, aluminium oxide, aluminium nitride, sintering aid and conductive agent is provided；And by after described material powder mix homogeneously, carry out hot pressed sintering process, form Sialon ceramics target.The Sialon ceramics using the present invention to prepare has good electric conductivity and heat conductivility, thus in filament cutting technique, the spark discharge of pulse feature is constantly produced between wire electrode in strengthening Sialon ceramics and moving, and when spark discharge instantaneous generation high temperature, accelerate the ablation of Sialon ceramics and the contact site of wire electrode, improve the cutting performance of Sialon ceramics, improve the smoothness of cutting Sialon ceramics, and the machining accuracy of Sialon ceramics.
Description
Technical field
The present invention relates to quasiconductor sputtering field, particularly to the manufacture method of a kind of Sialon ceramics target.
Background technology
Sai Long (sialon) be a kind of basic structural unit be (Si, Al) (O, N)4Tetrahedron material,
It is commonly used in ceramic material.Sialon ceramics includes α-sialon(MeXSi12-(m+n)Alm+n) OnN16-n,
Me is metal ion, including yttrium etc.) and β-sialon(Si6-ZAlZOZN8-Z) two kinds of deformable bodys.
Wherein, sialon pottery is silicon nitride (Si3N4) and aluminium oxide (Al2O3) consolidating of at high temperature generating
Solution, the characteristic of the crystalline phase that two kinds of sialon potteries inherit silicon nitride and two kinds of materials of aluminium oxide is the highest firmly
While degree, wearability, the most each tool characteristic.As α-sialon also has thermal shock resistance, and β-sialon compares
In conventional ceramic, there is more preferable fracture toughness.Sialon pottery has good heat, power, optical property, and
Stable chemical nature, is important inorganic material.And the complex phase being made up of α-sialon and β-sialon is matched grand
Pottery the most also has high intensity and high tenacity concurrently.
Based on the mechanical performance that sialon pottery is good, sialon pottery is usually used in bearing, sealing ring, Yi Jiguang
Learn the wear parts in the semiconductor device such as device, quasiconductor deviding device.Wherein, in semiconductor applications,
Sialon pottery forms the element such as optics, quasiconductor deviding device by vacuum magnetron sputtering coating film mode
Wear parts.More refer to the China of Publication No. CN102307827A specially about sialon pottery introduction
Profit document.
In vacuum magnetron sputtering coating film technique, sialon ceramic target is placed on the target chamber of sputtering base station
In body, on base material, form one layer of nanoscale or micron-sized sialon ceramic membrane by ion sputtering mode.
The accuracy requirement of thickness based on sialon ceramic membrane, vacuum magnetron sputtering coating film technique is used
Sialon ceramic target must mate with the target cavity of sputtering machine table completely.
Existing sialon ceramic target processing technology, makes and mechanical process including target, first leads to
Cross hot pressing (HP), without techniques such as pressure (PLS), air pressure (GPS) and hot isotatic pressings (HIP)
Form target, realize the structure of sialon ceramic target by machining modes such as line cuttings afterwards and accurately add
Work, so that the target cavity of used time and sputtering machine table matches.
But, in sialon ceramic target carries out line cutting process, Sialon ceramics target fragmentation usually occurs
Situation, and the deviation of the processing of sialon ceramic target is relatively big, machining accuracy is difficult to ensure, causes Sai Longtao
The yield rate of porcelain target is low.
Thus, how to improve the cuttability of sialon pottery, be ability to improve sialon pottery cutting accuracy
The problem that field technique personnel need solution badly.
Summary of the invention
For solving the problems referred to above, the invention provides the manufacture method of a kind of Sialon ceramics target, use this
Invention obtains Sialon ceramics and is prone to machining, thus improves the machining accuracy of Sialon ceramics target.
The manufacture method of a kind of Sialon ceramics target that the present invention provides, including:
The material powder including silicon nitride, aluminium oxide, aluminium nitride, sintering aid and conductive agent is provided；
After described material powder mix homogeneously, carry out hot pressed sintering process, form Sialon ceramics target.
Alternatively, described conductive agent is metal nitride.
Alternatively, described metal nitride is titanium nitride or tantalum nitride.
Alternatively, the weight content of described silicon nitride, aluminium oxide, aluminium nitride, sintering aid and conductive agent
For: 45～60wt%, 2～10wt%, 2～5wt%, 5～10wt%, 30～45wt%.
Alternatively, described hot pressed sintering process technique includes:
It is heated to 1200 DEG C with the speed of 5～10 DEG C/min；
Afterwards, it is heated to 1300～1400 DEG C with the speed of 1.5～3 DEG C/min；
Afterwards, it is heated to 1450～1700 DEG C with the speed of 4～6 DEG C/min；
With 0.3～0.5MPa/min speed persistent pressure, to presetting pressure, described default pressure is more than
20MPa；
And be 1450～1700 DEG C in temperature, preset heat-insulation pressure keeping heating 4～7h under pressure conditions.
Alternatively, described default pressure is 20～30MPa.
Alternatively, described hot pressed sintering processes and carries out under protective atmosphere.
Alternatively, described protective atmosphere includes Ar, He or N2Atmosphere.
Alternatively, it is ball-milling technology by the method for material powder mix homogeneously.
Alternatively, described ball-milling technology includes:
Described material powder is placed in ball grinder, after inserting disperse medium, ball milling 16～24h.
Alternatively, described ball-milling technology includes: using zirconium oxide or aluminium oxide as ball-milling medium.
Alternatively, described disperse medium is dehydrated alcohol and/or glycerol.
Alternatively, also include: after described ball-milling technology, described material powder is dried process.
Alternatively, the temperature of described dried is less than the boiling point of disperse medium.
Compared with prior art, technical scheme has the advantage that
In silicon nitride, aluminium oxide, aluminium nitride, sintering aid, add conductive agent, and process through hot pressed sintering
The technique preparing Sialon ceramics, can be effectively improved the electric conductivity that Sialon ceramics is overall, and lead at Sialon ceramics
After entering electric current, promote the heat conductivility of Sialon ceramics target based on the good electric conductivity that Sialon ceramics is overall.
In such as filament cutting technique, during good conduction and heat conductivility are strengthened Sialon ceramics target and are moved
The spark discharge of the pulse feature constantly produced between wire electrode, and the instantaneous generation high temperature when spark discharge,
Accelerate the ablation of Sialon ceramics target and the contact site of wire electrode, improve the cutting of Sialon ceramics target
Can, improve the smoothness of cutting Sialon ceramics target, thus promote the machining accuracy of Sialon ceramics.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of Sialon ceramics target of the present invention；
Fig. 2 is during the present invention makes Sialon ceramics target, uses the embodiment of ball-milling technology mixing raw material
Schematic diagram；
Fig. 3～Fig. 4 is to use hot pressed sintering to process PROCESS FOR TREATMENT target during the present invention makes Sialon ceramics target
The embodiment schematic diagram of material.
Detailed description of the invention
As described in background, in view of the mechanical performance that Sialon ceramics is good, at semiconductor applications,
Sialon ceramics thin film, as wear parts, obtains extensively on the elements such as optics, quasiconductor deviding device
Application.
But, when Sialon ceramics target carries out line cutting, the defects such as Sialon ceramics target fragmentation usually occur,
The cutting accuracy causing Sialon ceramics target is difficult to ensure.Analyze its reason to be attributed to: at Sialon ceramics target
In material line cutting process, Sialon ceramics target connects the positive pole of high frequency pulse power supply, wire electrode (such as molybdenum filament)
Connect negative pole.After high frequency pulse power supply is energized, need between Sialon ceramics target and the wire electrode moved
Produce the spark discharge of pulse feature, and the instantaneous generation high temperature heat source when spark discharge, thus at Sai Longtao
On porcelain target, the contact site contacted with wire electrode is by galvano-cautery, it is achieved the cutting of Sialon ceramics target.
But existing Sialon ceramics is dielectric material, its conduction, heat conductivility are poor.During cutting on line,
After high frequency pulse power supply energising, electric current cannot be smooth and easy by Sialon ceramics target, thus at Sialon ceramics target
The spark discharge of enough pulse features cannot be produced between material and wire electrode, Sialon ceramics target is realized electricity
Corrosion, it is achieved Sialon ceramics target cuts smoothly.
To this end, the invention provides the manufacture method of a kind of Sialon ceramics target, it is thus achieved that have good conductive
With the Sialon ceramics target of heat conductivity, improve cutting smooth degree and the cutting processing precision of Sialon ceramics target.
Below in conjunction with the accompanying drawings, by specific embodiment, technical scheme is carried out clear, complete
Description.
First, with reference to shown in Fig. 1, perform step S1: provide include silicon nitride, aluminium oxide, aluminium nitride,
Sintering aid and the material powder of conductive agent.Above-mentioned raw materials powder is used for making Sialon ceramics target.
In subsequent fabrication process, silicon nitride and aluminium oxide reaction make Sialon ceramics.Wherein, as made
During β-sialon, Z Si-N in silicon nitride is replaced by Z Al-O；When making α-sialon, nitrogen
N Si-N in SiClx is replaced by n Al-O, and m Si-N is replaced by m Al-N, and rear one
The electricity price that individual replacement causes is uneven to be compensated by x metal ions M e.The final Sialon ceramics obtained is concrete
Structure determine according to different material fiting ratio example.And the complex phase being made up of α-sialon and β-sialon
According to material rate, there is above-mentioned reaction in Sialon ceramics simultaneously.
Described sintering aid is chosen as La2O3、Y2O3And Al2O3。
It is the material of covalent bond type based on silicon nitride, thus during hot pressed sintering, causes Sialon ceramics to be difficult to
Fine and close.After inserting sintering aid in the feed, during hot pressed sintering, part sintering aid is changed by solid phase
For liquid phase, thus improved the compactness of the Sialon ceramics target obtained by liquid-phase sintering.
In the present embodiment, the preferred Y of described sintering aid2O3.Described Y2O3After liquid phase, other are former with part
Material reaction, and make Y2O3It is liquid phase or molten condition with other raw materials of part, fine and close with acceleration of sintering.
Described conductive agent can improve the electric conductivity of the Sialon ceramics target of acquisition.Described conductive agent is chosen as
Metallic compound, is chosen as metal nitride, further such as TiN and TaN.In sintering process, lead
Electricity agent can be connected with each other with raw material components such as aluminium nitride, silicon nitride by " metal-N " key, becomes pottery
Stable phase in target.
In the present embodiment, described conductive agent is TiN.
In the present embodiment, in described material powder, silicon nitride, aluminium oxide, aluminium nitride, sintering aid and
The weight content of conductive agent is: 45～60wt%, 2～10wt%, 2～5wt%, 5～10wt%, 30～45wt%.
Concrete ratio makees concrete configuration according to the performance of the Sialon ceramics being actually needed acquisition.
In the present embodiment, in described material powder, the grain diameter of each component is chosen as 2～3 μm.
With continued reference to shown in Fig. 1, perform step S2, by material powder mix homogeneously.
In the present embodiment, the hybrid technique used is chosen as ball-milling technology.
Wherein Fig. 2 illustrates ball-milling technology, specifically includes: described material powder 10 is placed in ball grinder 20
In, after described ball grinder 20 inserts disperse medium (not shown) and ball-milling medium 30, ball
Mill 16～24h, makes each component mix homogeneously in described material powder 10.
Described ball-milling medium 30 particle diameter is far longer than each material powder particle diameter, in mechanical milling process, rocks described
Ball grinder 20 so that ball-milling medium 30 fully stirs in described material powder 10, so that raw material
Each component mix homogeneously in powder.Described ball-milling medium 30 is chosen as aluminium oxide and zirconium oxide.
In the present embodiment, described ball-milling medium 30 is zirconium oxide.
Described disperse medium is chosen as alcohols, arene etc. and has less capillary material, described
Alcohols includes that ethanol, glycerol etc., described arene material include benzene, toluene etc..In mechanical milling process,
Described disperse medium can effectively reduce each intergranular adhesiveness in material powder, thus effectively dispersion is each
The little granule of raw material so that in material powder, the mixing of each component is more uniformly distributed.
In the present embodiment, described disperse medium is dehydrated alcohol, glycerol or both mixture.
After each for described material powder component being sufficiently mixed, it is dried process, is used for removing described ball
The disperse medium added in described material powder 10 in grinding process, thus obtain the material powder being dried.
The temperature that described dry treatment process is used is less than the boiling point of disperse medium, in dried process
In make disperse medium slowly volatilize, it is to avoid based on disperse medium boiling and cause raw material mixing uneven, from
And equipment causes damage, and cause Sialon ceramics target processing technology more loaded down with trivial details.
In the present embodiment, use dehydrated alcohol, glycerol or both mixture as disperse medium, institute
The temperature stating dry treatment process employing is 70～80 DEG C.
With continued reference to shown in Fig. 1, after dried obtains the material powder being dried, perform step S3,
Carry out hot pressed sintering process, form Sialon ceramics target.
The concrete process using hot pressed sintering to process technique formation Sialon ceramics target is with reference to Fig. 3 and Fig. 4.
As it is shown on figure 3, after dried material powder 10 is loaded graphite jig 40, by described graphite
Mould 40 is placed in vacuum sintering funace 50, carries out hot pressed sintering process.Wherein, described graphite mo(u)ld
Has 40 structures configuration settings according to Sialon ceramics target to be formed.
As shown in Figure 4, after hot pressed sintering processes, prepare Sialon ceramics target 11.
Specifically, described hot pressed sintering process technique includes:
The early stage temperature rise period: initiateed intensification by room temperature, regulate the heating of described vacuum sintering funace 50
Speed is 5～10 DEG C/min, until the temperature of described vacuum sintering funace 50 up to 1200 DEG C.This stage
In, material powder form do not have the biggest change, can make former with the rate of heat addition of 5～10 DEG C/min
Material powder each component thermally equivalent, stable intensification；
Afterwards, enter the temperature rise period in mid-term, regulate the rate of heat addition of described vacuum sintering funace 50
1.5～3 DEG C/min, it is chosen as 2 DEG C/about min.Relative to the described early stage temperature rise period, in this stage,
Slow down the heating rate of vacuum sintering funace, until 1300～1400 DEG C.Gradually heat up after 1200 DEG C
During, Si3N4Starting phase transformation occur, during this, the speed of heating of 1.5～3 DEG C/min can make part
α-Si3N4Fully it is transformed into β-Si3N4, other components and α-Si3N4With β-Si3N4α is included in conjunction with formation
The Sialon ceramics target of-sialon and β-sialon, and the most also can be effectively improved TiN and
The bond strength of other components, to improve the performance of Sialon ceramics target.
In temperature rise period in mid-term, concrete intensification terminal and heating rate can according in material powder,
Depending on the content of each component.
Finally, the temperature rise period in later stage is entered.Specifically, Si after 1300～1400 DEG C3N4Complete phase transformation
Convert, in risen to the later stage temperature-rise period of 1400～1700 DEG C by 1300～1400 DEG C, the speed that heats up can be accelerated
Rate, is heated to heat preservation sintering temperature 1450～1700 DEG C with the hot speed of 4～6 DEG C/min so that each group of raw material
Divide fully heating.
And gradually risen by room temperature to heat preservation sintering temperature course, the most progressively strengthen hot pressed sintering
Pressure in stove 50, until the pressure in described hot-pressed sintering furnace 50 is to presetting pressure.
In the present embodiment, described default pressure more than 20MPa just can, be chosen as 20～30MPa further,
Described compression rate is controllable to 0.3～0.5MPa/min, at continuous pressure dwell, can effectively remove raw material
The gas produced in middle temperature-rise period, the most progressively pressurization realizes raw material compacting, thus is effectively improved final
The compactness of the Sialon ceramics target formed.
When the temperature in described vacuum sintering funace 50 up to 1450～1700 DEG C, pressure reaches to preset pressure
Qiang Hou, heat-insulation pressure keeping heating 4～7h, thus form Sialon ceramics target.
During hot pressed sintering, after yittrium oxide forms liquid phase or molten state with other raw material components of part,
Silicon nitride reacts with aluminium oxide and aluminium nitride, and the Si-N in silicon nitride is replaced by Al-O, and Si-N is by Al-N
Replace, and later replaces uneven ruthenium ion of the electricity price caused and compensates, thus form Sialon ceramics.
Titanium nitride is then evenly distributed in Sialon ceramics, can be effectively improved leading of prepared Sialon ceramics target
Electrically and heat conductivity.
Under the conditions of more than 1700 DEG C, silicon nitride decomposes can become the form such as silicon oxide and nitrogen, no
Reduced by only other component reaction in silicon nitride and material powder and form the probability of Sialon ceramics, and nitrogen
Appearance can reduce the consistency of grand ceramic target.In the present embodiment, under the conditions of 1450～1700 DEG C, join
Close and be processed operation under the pressure more than 20MPa, while guaranteeing to obtain Sialon ceramics target, have
Effect inhibits silicon nitride to decompose, thus improves the quality of the Sialon ceramics target of acquisition.
By the above-mentioned step progressively heating up, boosting, in the present embodiment, only need to be 1450～1700 DEG C of conditions
Under, more than heat-insulation pressure keeping heating 4～7h under conditions of 20MPa, just can obtain consistency and be up to 99%(survey
Method for testing: GB3850-83 ≈ ISO3369-1975, dense sintering metal material is surveyed with hard alloy density
Determine method) high-compactness Sialon ceramics target, it complies fully with magnetron sputtering requirement.Compared to existing
Some temperature reach more than 1900 DEG C, and pressure reaches the hot pressed sintering of 50～60MPa and makes Sialon ceramics target
The technique of material, the present embodiment greatly reduces the cost of manufacture of Sialon ceramics target, and for equipment
Requirement.
In the present embodiment, in described hot pressed sintering processing procedure, also can be to described vacuum heating-press sintering
It is passed through protective atmosphere, to strengthen the stability of hot pressed sintering processing procedure in stove 50.
Described protective atmosphere is chosen as nitrogen, argon, helium etc..
In the present embodiment, described protective gas is preferably nitrogen.Hot conditions during hot pressed sintering
Under, silicon nitride there will be decomposition reaction and generates the component such as nitrogen and silicon oxide.Burning to described vacuum hotpressing
After being passed through nitrogen in freezing of a furnace 50, can by strengthen nitrogen content promote silicon nitride resolve into generation nitrogen and
The molecular balance of silicon oxide is carried out to reverse direction, and suppression silicon nitride resolves into the reaction of nitrogen and silicon oxide.
Thus reduce the gas flow in reaction system, it is to avoid there are the defects such as pin hole in the Sialon ceramics target of formation,
Thus improve the consistency of the Sialon ceramics target of formation.
It should be noted that in other embodiments, more described graphite jig 40 is placed in vacuum hotpressing burning
Before freezing of a furnace 50 carries out hot pressed sintering, can first the material powder 10 in described graphite jig 40 be carried out
Cold pressing treatment in advance, improves the compactness between material powder 10 in advance.
The Sialon ceramics target 11 that the manufacture method of the Sialon ceramics target provided by the present embodiment is prepared,
Its consistency is up to 99%(method of testing: GB3850-83 ≈ ISO3369-1975, dense sintering metal
Material and hard alloy density measurement method), and there is good conduction, heat conductivility.Thus at filament
In cutting technique, the spark strengthening the constantly pulse feature of generation between Sialon ceramics target 11 and wire electrode is put
Electrical effect, to accelerate the ablation of Sialon ceramics target 11 and the contact site of wire electrode, thus improves cutting
The smoothness of Sialon ceramics target 11, is effectively improved the cutting performance of Sialon ceramics target 11, Jin Erti
The machining accuracy of high Sialon ceramics target 11.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
The scope of protecting should be as the criterion with claim limited range.
Claims (11)
1. the manufacture method of a Sialon ceramics target, it is characterised in that including:
The material powder including silicon nitride, aluminium oxide, aluminium nitride, sintering aid and conductive agent is provided；Institute
Stating conductive agent is titanium nitride or tantalum nitride；Described silicon nitride, aluminium oxide, aluminium nitride, sintering aid and lead
The weight content of electricity agent is: 45～60wt%, 2～10wt%, 2～5wt%, 5～10wt%, 30～45wt%；
After described material powder mix homogeneously, carry out hot pressed sintering process, form Sialon ceramics target.
The manufacture method of Sialon ceramics target the most according to claim 1, it is characterised in that described hot pressing
Sintering processes technique includes:
It is heated to 1200 DEG C with the speed of 5～10 DEG C/min；
Afterwards, it is heated to 1300～1400 DEG C with the speed of 1.5～3 DEG C/min；
Afterwards, it is heated to 1450～1700 DEG C with the speed of 4～6 DEG C/min；
With 0.3～0.5MPa/min speed persistent pressure, to presetting pressure, described default pressure is more than 20MPa；
And be 1450～1700 DEG C in temperature, preset heat-insulation pressure keeping heating 4～7h under pressure conditions.
The manufacture method of Sialon ceramics target the most according to claim 2, it is characterised in that described default
Pressure is more than 20MPa and less than or equal to 30MPa.
The manufacture method of Sialon ceramics target the most according to claim 1, it is characterised in that described hot pressing
Sintering processes is carried out under protective atmosphere.
5. the manufacture method of the Sialon ceramics target stated according to claim 4, it is characterised in that described protection gas
Atmosphere includes Ar, He or N2Atmosphere.
The manufacture method of Sialon ceramics target the most according to claim 1, it is characterised in that by raw material powder
The method of end mix homogeneously is ball-milling technology.
The manufacture method of Sialon ceramics target the most according to claim 6, it is characterised in that described ball milling
Technique includes:
Described material powder is placed in ball grinder, after inserting disperse medium, ball milling 16～24h.
The manufacture method of Sialon ceramics target the most according to claim 7, it is characterised in that described ball milling
Technique includes: using zirconium oxide or aluminium oxide as ball-milling medium.
The manufacture method of Sialon ceramics target the most according to claim 7, it is characterised in that described dispersion
Medium is dehydrated alcohol and/or glycerol.
The manufacture method of Sialon ceramics target the most according to claim 9, it is characterised in that also include:
After described ball-milling technology, described material powder is dried process.
The manufacture method of 11. Sialon ceramics targets according to claim 10, it is characterised in that described dry
The temperature processed is less than the boiling point of disperse medium.
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Application publication date: 20150318 Assignee: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Assignor: Ningbo Jiangfeng Powder Metallurgy Co., Ltd Contract record no.: X2019330000048 Denomination of invention: Sialon ceramic target material production method Granted publication date: 20161228 License type: Exclusive License Record date: 20191203 |
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Address after: 315400 no.198 Anshan Road, Yuyao City, Ningbo City, Zhejiang Province Patentee after: Ningbo Jiangfeng hot isostatic pressing technology Co.,Ltd. Address before: 315400 no.198 Anshan Road, Yuyao City, Ningbo City, Zhejiang Province Patentee before: Ningbo Jiangfeng Powder Metallurgy Co.,Ltd. |
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