CN104392964A - Dusg 3d nand闪存存储器及其形成方法 - Google Patents
Dusg 3d nand闪存存储器及其形成方法 Download PDFInfo
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- CN104392964A CN104392964A CN201410528710.1A CN201410528710A CN104392964A CN 104392964 A CN104392964 A CN 104392964A CN 201410528710 A CN201410528710 A CN 201410528710A CN 104392964 A CN104392964 A CN 104392964A
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- 230000015654 memory Effects 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000003860 storage Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000002955 isolation Methods 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410528710.1A CN104392964B (zh) | 2014-10-09 | 2014-10-09 | 双顶层选择栅极 3d nand闪存存储器及其形成方法 |
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CN201410528710.1A CN104392964B (zh) | 2014-10-09 | 2014-10-09 | 双顶层选择栅极 3d nand闪存存储器及其形成方法 |
Publications (2)
Publication Number | Publication Date |
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CN104392964A true CN104392964A (zh) | 2015-03-04 |
CN104392964B CN104392964B (zh) | 2017-02-15 |
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CN201410528710.1A Active CN104392964B (zh) | 2014-10-09 | 2014-10-09 | 双顶层选择栅极 3d nand闪存存储器及其形成方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100320528A1 (en) * | 2009-06-22 | 2010-12-23 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory device |
US20120003828A1 (en) * | 2010-07-01 | 2012-01-05 | Sung-Il Chang | Semiconductor memory device and method of forming the same |
CN102769018A (zh) * | 2011-05-04 | 2012-11-07 | 海力士半导体有限公司 | 非易失性存储器件 |
US20140054538A1 (en) * | 2012-08-23 | 2014-02-27 | SK Hynix Inc. | 3-dimensional stack memory device |
CN103904035A (zh) * | 2014-03-05 | 2014-07-02 | 清华大学 | Tcat结构及其形成方法 |
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2014
- 2014-10-09 CN CN201410528710.1A patent/CN104392964B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100320528A1 (en) * | 2009-06-22 | 2010-12-23 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory device |
US20120003828A1 (en) * | 2010-07-01 | 2012-01-05 | Sung-Il Chang | Semiconductor memory device and method of forming the same |
CN102769018A (zh) * | 2011-05-04 | 2012-11-07 | 海力士半导体有限公司 | 非易失性存储器件 |
US20140054538A1 (en) * | 2012-08-23 | 2014-02-27 | SK Hynix Inc. | 3-dimensional stack memory device |
CN103904035A (zh) * | 2014-03-05 | 2014-07-02 | 清华大学 | Tcat结构及其形成方法 |
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CN104392964B (zh) | 2017-02-15 |
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C06 | Publication | ||
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C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Deng Ning Inventor after: Wu Huaqiang Inventor after: Feng Wei Inventor after: Qian He Inventor after: Shu Qingming Inventor after: Zhu Yiming Inventor before: Deng Ning Inventor before: Wu Huaqiang Inventor before: Feng Wei Inventor before: Qian He |
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Effective date of registration: 20160317 Address after: 100084 Haidian District 100084-82 mailbox Beijing Applicant after: TSINGHUA University Applicant after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 100084 Haidian District 100084-82 mailbox Beijing Applicant before: Tsinghua University |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 100084-82 box 100084, Beijing, Haidian District Patentee after: TSINGHUA University Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100084-82 box 100084, Beijing, Haidian District Patentee before: TSINGHUA University Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |