CN104362244A - 一种金属基板 - Google Patents

一种金属基板 Download PDF

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Publication number
CN104362244A
CN104362244A CN201410654850.3A CN201410654850A CN104362244A CN 104362244 A CN104362244 A CN 104362244A CN 201410654850 A CN201410654850 A CN 201410654850A CN 104362244 A CN104362244 A CN 104362244A
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metal substrate
layer
metal
substrate body
welding layer
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杨文澍
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种金属基板，包括有金属基板，在所述的金属基板上设有透镜安装槽、荧光粉涂覆槽、电极焊盘和芯片焊接层，所述的透镜安装槽、电极焊盘、荧光粉涂覆槽和芯片焊接层在俯视方向上由外至里分布，所述的芯片焊接层为Ag层，在所述的芯片焊接层和金属基板之间通过金属粘结层和绝缘层连接。本发明中芯片通过金属粘结层和绝缘层连接直接焊接在金属基板上，减小了封装热阻；其次，用Ti制成的金属粘结层和用AlN在制成的绝缘层保证了良好的导热性和较低的热膨胀系数，使得芯片上的热量能够迅速传递到金属基板上，由金属基板散发出去。

Description

一种金属基板
【技术领域】
本发明涉及一种金属基板。
【背景技术】
LED被称为***照明光源及绿色光源，近几年来该产业发展迅猛。由于LED结温的高低直接影响到LED的出光效率、器件寿命和可靠性等，因此散热问题已经成为大功率LED产业发展的瓶颈。金属基复合材料将金属材料的高导热性和增强体材料的低热胀系数结合起来，具有热导率高、热膨胀系数可调、比重小、强度和硬度高的优点，在新型大功率LED封装基板方面极具应用前景。
【发明内容】
本发明要解决的技术问题是克服上述缺陷，提供一种结构合理，导热系数高、热膨胀系数小的金属基板。
为解决上述问题，本发明所采用的技术方案是：
一种金属基板，包括有金属基板，在所述的金属基板上设有透镜安装槽、荧光粉涂覆槽、电极焊盘和芯片焊接层，所述的透镜安装槽、电极焊盘、荧光粉涂覆槽和芯片焊接层在俯视方向上由外至里分布，所述的芯片焊接层为Ag层，在所述的芯片焊接层和金属基板之间通过金属粘结层和绝缘层连接。
在对上述金属基板的改进方案中，所述的金属粘结层是由Ti或含Ti组合物组成的金属层。
在对上述金属基板的改进方案中，所述的绝缘层是由AlN或含AlN组成的无机非金属材料层。
由于采用了上述技术方案，与现有技术相比，本发明中芯片通过金属粘结层和绝缘层连接直接焊接在金属基板上，减小了封装热阻；其次，用Ti制成的金属粘结层和用AlN在制成的绝缘层保证了良好的导热性和较低的热膨胀系数，使得芯片上的热量能够迅速传递到金属基板上，由金属基板散发出去。
【附图说明】
图1是本发明实施例的立体示意图；
图2为本发明实施例中的俯视图。
【具体实施方式】
一种金属基板，包括有金属基板10，在所述的金属基板10上设有透镜安装槽70、荧光粉涂覆槽20、电极焊盘30和芯片焊接层40，所述的透镜安装槽70、电极焊盘30、荧光粉涂覆槽20和芯片焊接层40在俯视方向上由外至里分布，所述的电极焊接盘30对称分布在荧光粉涂覆层20外侧，避免引线与荧光粉涂覆层20相连，引起短路；所述的芯片焊接层40为Ag层，在所述的芯片焊接层40和金属基板10之间通过金属粘结层50和绝缘层60连接。
所述的金属粘结层50是由Ti或含Ti组合物组成的金属层，也可以用Al或Cu的等金属。
所述的绝缘层60是由AlN或含AlN组成的无机非金属材料层，当然，也可以采用SiC、Al2O3等无机物。
以上实施例仅用以说明本发明的技术方案，而非对其限制，尽管参照前述实例施例对本发明进行了详细的说明，本领域的普通技术人员应当理解，其依据可以对前述各实施例记载的技术方案进行修改，或对其部分技术特征进行等同替换，而这些修改或替换，并不使相应技术方案的本质脱离本发明技术方案的精神和范畴。

Claims (3)

1.一种金属基板，其特征在于，包括有金属基板，在所述的金属基板上设有透镜安装槽、荧光粉涂覆槽、电极焊盘和芯片焊接层，所述的透镜安装槽、电极焊盘、荧光粉涂覆槽和芯片焊接层在俯视方向上由外至里分布，所述的芯片焊接层为Ag层，在所述的芯片焊接层和金属基板之间通过金属粘结层和绝缘层连接。
2.根据权利要求1所述的一种金属基板，其特征在于，所述的金属粘结层是由Ti或含Ti组合物组成的金属层。
3.根据权利要求1所述的一种金属基板，其特征在于，所述的绝缘层是由AlN或含AlN组成的无机非金属材料层。
CN201410654850.3A 2014-11-17 2014-11-17 一种金属基板 Pending CN104362244A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110021695A (zh) * 2019-04-03 2019-07-16 苏州大学 大功率led封装用基板及其制备方法、大功率led封装结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088082A (ja) * 2005-09-20 2007-04-05 Matsushita Electric Works Ltd 発光装置
US20070200133A1 (en) * 2005-04-01 2007-08-30 Akira Hashimoto Led assembly and manufacturing method
CN101212007A (zh) * 2006-12-29 2008-07-02 台达电子工业股份有限公司 电致发光模块
CN101709858A (zh) * 2009-09-27 2010-05-19 广州南科集成电子有限公司 Led照明高效散热铝基板、led光源及二者的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070200133A1 (en) * 2005-04-01 2007-08-30 Akira Hashimoto Led assembly and manufacturing method
JP2007088082A (ja) * 2005-09-20 2007-04-05 Matsushita Electric Works Ltd 発光装置
CN101212007A (zh) * 2006-12-29 2008-07-02 台达电子工业股份有限公司 电致发光模块
CN101709858A (zh) * 2009-09-27 2010-05-19 广州南科集成电子有限公司 Led照明高效散热铝基板、led光源及二者的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110021695A (zh) * 2019-04-03 2019-07-16 苏州大学 大功率led封装用基板及其制备方法、大功率led封装结构

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