CN104362078B - Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance - Google Patents
Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance Download PDFInfo
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- CN104362078B CN104362078B CN201410663518.3A CN201410663518A CN104362078B CN 104362078 B CN104362078 B CN 104362078B CN 201410663518 A CN201410663518 A CN 201410663518A CN 104362078 B CN104362078 B CN 104362078B
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- signal
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- time feedback
- direct current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0042—Assembling discrete nanostructures into nanostructural devices
Abstract
The invention relates to the field of nano operation, in particular to a real-time feedback automatic assembling and manufacturing method for a nano-electronic appliance. According to the real-time feedback automatic assembling and manufacturing method, a closed-loop real-time detection assembling method is adopted, and driving signals with alternating current and direct current superposed are applied to microelectrodes through a signal generator, wherein alternating current signals serve as the driving signals, and direct current bias signals serve as detection signals; real-time feedback is achieved by scanning the jump of the direct current bias signals. A floating potential dielectrophoresis technique is adopted, and the problems that the effective assembling efficiency of the nano-electronic appliance is low and automatic and large-scale assembling is difficult to achieve are solved based on the closed-loop control concept; the real-time feedback automatic assembling and manufacturing method has the advantage that the physical and chemical features of nano conduits are not damaged; tiny changes of various kinds of force can be measured according to unique physical and chemical features of different nano materials.
Description
Technical field
The present invention relates to nano-manipulation field, concretely relate to a kind of nano electron device automatization of Real-time Feedback
Assembling manufacturing method.
Background technology
Nanotechnology and nano-device are one of important development directions of current new and high technology.The breakthrough of nanotechnology and receiving
The application of rice device depends on the progress of nanofabrication technique.According to international semiconductor development blueprint (international
Technology roadmap for semiconductors, itrs) in December, 2007 technical report (itrs2007), arrive
The year two thousand twenty, half pitch width of dynamic RAM will be 14nm.With the continuous reduction of device size, will become closer to
The limit of existing electronic devices and components framework, the problem being difficult to go beyond being run into is not only the physics limit of electronic device, simultaneously
Also include the technical bottlenecks such as precise automatic processing and power problemses.Traditional silicon-base plane printing technology has restricted
The lifting further of ic core piece performance and integrated level, the nano-electron of Development of Novel array, automatization and scale
Device assembling and manufacturing technology have become the research frontier of current International Technology circle attention the most.Nanofabrication technique and phase
The R ＆ D Level of pass equipment, directly reflects the overall development strength that sciemtifec and technical sphere formerly is entered to manufacture in countries and regions, this
A little become worldwide common recognition.The lifting of nanometer electronic device Automated assembly manufacturing capacity, will carry to various fields technology
Rise and promote and produce tremendous influence
The research of monodimension nanometer material and device, as an important branch of nanoscale science and technology, has obtained greatly
Concern and development.If zinc oxide (znic oxide, abridge zno) nano wire is a kind of important wide bandgap semiconductor function material
Material, the UV Stimulated radiation under achievable room temperature, possess quasiconductor, photoelectricity, piezoelectricity, thermoelectricity, air-sensitive and electrically conducting transparent and harmless
Many good characteristics such as property, are a kind of important 1-dimention nano functional materials.Can be used for manufacturing UV LED, laser instrument
The important photoelectric device such as diode, photodetector it can also be used to zno base gas, biology, chemical sensor, in optoelectronics
The nanoelectronics such as solaode, logic circuit and spin electric device field also has broad application prospects.
At present, nano electron device manufacturing technology is essentially still at laboratory stage, and existing assembling manufacturing technology is also no
Method realizes automatization, low cost manufactures, and this state of the art remains restriction nano-device research and application institute facing challenges
Sex chromosome mosaicism.Automated manufacturing is the development trend of nano-device.Using the floating potential dielectrophoresis method based on Real-time Feedback, real
Existing nanometer pipeline and the Automated assembly of microelectrode, significant to nano-device Manufacturing Technology Development.
Content of the invention
For solving the above problems, it is an object of the invention to provide a kind of nano electron device Automated assembly of Real-time Feedback
Manufacture method.
For achieving the above object, the technical solution used in the present invention is the nano electron device Automated assembly of Real-time Feedback
Manufacture method: it adopts closed loop real-time detection assembly method, applies the drive of alternating current-direct current superposition by signal generator to microelectrode
, as drive signal, DC bias signal is as detection signal for dynamic signal, wherein AC signal；By scanning DC bias signal
Real-time Feedback is realized in saltus step；It specifically comprises the following steps that
1) by nano material pretreatment；
2) the alternating current-direct current superposed signal needed for electric field is respectively applied to source electrode and the drain electrode of micro-electrode chip by probe；
To this electrode apply alternating current-direct current superposed signal in sinusoidal ac signal as drive signal, be scanned, its rate of scanning from
300k-3mhz, 2～10 seconds sweep times；
3) pretreated 1～2 μ l nano material is titrated at the source-drain electrode intermediate space of electrode by deposition probe,
When nano material Deca electrode two ends, there is saltus step as detection signal in DC bias signal, within sweep time, if direct current
The saltus step of offset signal is shown on oscillograph, then the experiment parameter that quick obtaining successfully assembles, and completes the assembling of this microelectrode, and
After terminating sweep time, automatic running is assembled to lower a pair of electrodes；If the saltus step of DC bias signal is not shown in showing
On ripple device, then this microelectrode assembles unsuccessfully, and automatic running is assembled to lower a pair of electrodes.
Described nano material is zinc oxide nanowire, CNT or cupric oxide nano line.
As drive signal, its peak-to-peak threshold voltage is 6～10v to described AC signalp-p, frequency 300k-3mhz.
As detection signal, bias voltage is 5v to described DC bias signal.
Distance between described source-drain electrode is 1 μm.
The present invention has the advantage that the present invention adopts floating potential dielectrophoresis technology, based on closed loop control thought, solve
The effective efficiency of assembling of nanometer electronic device is low, be difficult to automatization, a difficult problem for scale assembling, has and does not destroy nanometer pipeline itself
Physics, the feature of chemical property, according to the unique physicochemical characteristicss of different nano materials, can measure the small change of various power
Change；Very high operability and repeatability are had using the automatized assembly method of closed loop control, is the system of nanometer electronic device
Make and provide new possible technique approach.
Brief description
Fig. 1 is that assembling schematic diagram is moved in Automated condtrol position of the present invention；
Fig. 2 is oscillographic oscillogram before present invention assembling；
Fig. 3 is oscillographic oscillogram after present invention assembling；
Fig. 4 aligns on substrate after Automated assembly for zno nano wire of the present invention.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.
1. nano material pretreatment: zno nano wire and ethanol mixed solution are put in test tube by 1:1000, and by test tube
Put in ultrasonic oscillator in 30 degrees Celsius of ultrasonic 10-15 minutes, obtain uniformly translucent molten after then taking out static 1 hour
Liquid, obtaining dispersion is in single a large amount of zno nano wire samples in the solution；
2. the Automated assembly process based on closed-loop control system: the distance between due to source-drain electrode is about 1 μm, in circuit
In be equivalent to electric capacity, when not overlapping zno nano wire, AC signal can be transmitted by electrode, and direct current signal will be blocked；
When medium is overlapped on electrode two ends, electrode and medium are equivalent to a resistance, and alternating current-direct current signal all can transmit；First pass through letter
The drive signal of number alternating current-direct current that generator applies to microelectrode superposition, the AC signal in the drive signal of alternating current-direct current superposition is made
It is scanned for drive signal, from 300k-3mhz, 2～10 seconds sweep times, Fig. 2 rides over its rate of scanning for no zno nano wire
During electrode two ends, oscillographic oscillogram；Then micro-fluidic end effector is automatically moved to target under micro-vision monitoring
At electrode gap, keep presetting the height of titration, and the output titrating is controlled by Micropump, by zno nano wire Deca
To in electrode, when nano material Deca electrode, DC bias signal shows as detection signal, the saltus step of DC bias signal
On oscillograph, Fig. 3 is the oscillographic oscillogram when zno nano wire rides over source-drain electrode two ends.Therefore, when there is this
During leaping voltage, indicate that electrode assembles successfully, record the frequency values of this saltus step moment it is possible to effectively be driven simultaneously
The scope of frequency.
Claims (5)
1. Real-time Feedback nano electron device Automated assembly manufacture method it is characterised in that: it adopts closed loop real-time detection
Assembly method, applies alternating current-direct current superposed signal, wherein AC signal as drive signal by signal generator to microelectrode, directly
Stream offset signal is as detection signal；Realize Real-time Feedback by scanning DC bias signal saltus step；It specifically comprises the following steps that
1) by nano material pretreatment；
2) the alternating current-direct current superposed signal needed for electric field is respectively applied to source electrode and the drain electrode of micro-electrode chip by probe；To this
In the alternating current-direct current superposed signal that electrode applies, sinusoidal ac signal, as drive signal, is scanned, its rate of scanning is from 300k-
3mhz, 2～10 seconds sweep times；
3) pretreated 1～2 μ l nano material is titrated at the source-drain electrode intermediate space of electrode by deposition probe, when receiving
When rice droplets of material powers up pole two ends, there is saltus step as detection signal in DC bias signal, within sweep time, if direct current biasing
The saltus step of signal is shown on oscillograph, then the experiment parameter that quick obtaining successfully assembles, and completes the assembling of this microelectrode, and is sweeping
The time of retouching terminates rear automatic running and assembles to lower a pair of electrodes；If the saltus step of DC bias signal is not shown in oscillograph
On, then this microelectrode assembles unsuccessfully, and automatic running is assembled to lower a pair of electrodes.
2. Real-time Feedback according to claim 1 nano electron device Automated assembly manufacture method it is characterised in that:
Described nano material is zinc oxide nanowire, CNT or cupric oxide nano line.
3. Real-time Feedback according to claim 1 nano electron device Automated assembly manufacture method it is characterised in that:
As drive signal, its peak-to-peak threshold voltage is 6～10v p-p to described AC signal, frequency 300k-3mhz.
4. Real-time Feedback according to claim 1 nano electron device Automated assembly manufacture method it is characterised in that:
As detection signal, bias voltage is 5v to described DC bias signal.
5. Real-time Feedback according to claim 1 nano electron device Automated assembly manufacture method it is characterised in that:
The distance of described source and drain interpolar is 1 μm.
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| CN201410663518.3A CN104362078B (en) | 2014-11-19 | 2014-11-19 | Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance |
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| CN201410663518.3A CN104362078B (en) | 2014-11-19 | 2014-11-19 | Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance |
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| CN105600743B (en) * | 2016-01-27 | 2017-05-03 | 东南大学 | 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445480A (en) * | 2011-09-23 | 2012-05-09 | 东南大学 | Method for preparing nano-gap electrodes on surface of nano-pore and in nano-pore |
| CN103626123A (en) * | 2013-10-25 | 2014-03-12 | 沈阳建筑大学 | Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis |
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| JP4338948B2 (en) * | 2002-08-01 | 2009-10-07 | 株式会社半導体エネルギー研究所 | Method for producing carbon nanotube semiconductor device |
| TWI299399B (en) * | 2005-12-13 | 2008-08-01 | Jung Tang Huang | Method to integrate carbon nanotube with cmos chip into array-type microsensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445480A (en) * | 2011-09-23 | 2012-05-09 | 东南大学 | Method for preparing nano-gap electrodes on surface of nano-pore and in nano-pore |
| CN103626123A (en) * | 2013-10-25 | 2014-03-12 | 沈阳建筑大学 | Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis |
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