CN101713788A - Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending - Google Patents
Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending Download PDFInfo
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- CN101713788A CN101713788A CN200910237676A CN200910237676A CN101713788A CN 101713788 A CN101713788 A CN 101713788A CN 200910237676 A CN200910237676 A CN 200910237676A CN 200910237676 A CN200910237676 A CN 200910237676A CN 101713788 A CN101713788 A CN 101713788A
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Abstract
The invention discloses a method for testing electromechanical properties of a nano-wire/micron-scale wire in condition of in-situ bending, and belongs to the field of in-situ testing for property of nano-scale/micron-scale materials. The method for testing electromechanical properties of a nano-wire/micron-scale wire in condition of in-situ bending is characterized in that a single nano-wire/micron-scale wire is fixed on a scanning probe and a conductive substrate, and the single nano-wire/micron-scale wire is bent by moving the substrate upwards and downwards; while bending the nano-wire/micron-scale wire, the electrical properties are measured by applying voltage testing current signals to the scanning probe and the conductive substrate. The method for testing electromechanical properties of a nano-wire/micron-scale wire in condition of in-situ bending has the advantages of simple and convenient operation, wire application range, short measuring time, and suitability for explaining and discovering excellent electromechanical properties of nano-scale/micron-scale materials.
Description
Technical field
The present invention relates to electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing in a kind of scanning probe microscopy, belong to Nano/micron material property in situ detection field.
Background technology
Realization is measured the manipulation of single nano/micron structure and in-situ performance, is Nano/micron material and based on the crucial matter of science and technology of bottleneck of the new device research of these materials all the time.1-dimention nano/micro materials is as the basic functional units in the minute mechanical and electrical system, and electric property, mechanical property and the power electric coupling performance that fully understands single 1-dimention nano/micro materials is the prerequisite of design novel nano/micron function element.Means of testing for the power electrical property of single 1-dimention nano/micro materials under bending roughly can be divided into following two kinds at present.
The first, the method for development single 1-dimention nano/micro materials power electric performance test in scanning electron microscope.2006, " Nano Letters ", vol.6 has reported in " based on the piezoelectric field effect transistor and the nanometer mechanics sensor of single zinc oxide nanowire " on the 2768-2772 (the Piezoelectric field effect transistor andnanoforce sensor based on a single ZnO nanowire) literary composition and has utilized the metal probe of conduction to go crooked nano wire to measure its power electrical property simultaneously in scanning electron microscope.Be equally in scanning electron microscope, 2007, " Advanced Materials ", vol.19, reported again in " based on the piezoelectricity gate diode of single zinc oxide nanowire " on the 781-784 (the Piezoelectric gated diode of a single ZnO nanowire) article in the scanning electron microscope cover nanometer control system has been installed, utilized two conducting probes in the nanometer control system to realize bending and power electric performance test single nano material.Can realize bending and power electric performance test although in scanning electron microscope, utilize metal probe to single 1-dimention nano/micro materials, but because nano wire/micro wire is not fixed on the metal probe, nano wire/micro wire is easy to slide on metal probe in the test process, causes being difficult to judge that the electric signal of test derives from material variation itself or contact problems.Simultaneously, because scanning electron microscope must operate under the high vacuum condition, therefore each experiment must vacuumize and to the debugging that nanometer is controlled, increased the test duration to single nano-wire/micro wire greatly system.
The second, utilize bending and the power electric performance test of the transmission electron microscope realization of repacking to single nano-wire/micro wire.2007, " Nano Letters ", vol.7 has reported in " electronic transport of the single boron nitride nano-tube that deformation causes " on the 632-637 (the Deformation-driven electrical transport of individualboron nitride nanotubes) literary composition and has utilized the metal probe of conduction to go crooked nanotube to measure its power electrical property simultaneously in transmission electron microscope.Be equally in transmission electron microscope, 2008, " AppliedPhysics Letters ", vol.92 has equally also reported in " electroresponse of the crooked single zinc oxide nanowire of original position under transmission electron microscope " (the In situ probing electrical response on bending of ZnO nanowiresinside transmission electron microscope) literary composition on 213105 and has utilized the metal probe of conduction to go crooked single zinc oxide nanowire to measure its power electrical property simultaneously in transmission electron microscope.Can realize bending and power electric performance test although in the transmission electron microscope of repacking, utilize metal probe to single 1-dimention nano/micro materials, but the two ends of nano wire can not all be fixed, problems such as the test duration is very long, and efficient is very low still are present in this method of testing.
Utilizing the crooked single nano-wire/micro wire of probe original position to measure its power electrical property simultaneously in scanning probe system is the most direct measuring method.Because scan-probe is operated under the atmospheric environment, therefore do not need it is vacuumized, the two ends of nano wire can be fixed fully simultaneously, the sliding problem that does not have nano wire/micro wire in the test process is fully true and reliable for the signal of single nano-wire/micro wire power electric performance test.
Summary of the invention
The present invention provides in a kind of scanning probe microscopy the electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing, its objective is to utilize this method to realize single one-dimensional nano line/micro wire in-situ mechanical, electric property and electric power coupling performance are measured.
A kind of electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing, it is characterized in that, single nano wire/micro wire is fixed on scanning probe tip and the conductive substrates, moves up and down realization to the crooked of single nano wire/micro wire with stretch by the control substrate.In nano wire/micro wire bending,, realize the electricity performance measurement of nano wire/micro wire under bending by on scan-probe and conductive substrates, applying voltage testing current signals.
The invention provides electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing in a kind of scanning probe microscopy, can realize the flexural deformation of single 1-dimention nano/micro materials original position in scanning probe microscopy, elastic performance, plastic property and fracture process that can exosyndrome material.Simultaneously it can also test the test of single 1-dimention nano/micro materials power electric coupling performance, it is characterized in that this method carries out as follows:
1. single 1-dimention nano/micro materials is fixed on the needle point of scanning probe microscopy with conductive silver glue.
2. the CD-ROM drive motor of gated sweep probe microscope allows the substrate of conduction contact an other end of single 1-dimention nano/micro materials, and utilizes conductive silver glue to fix, and this moment, the two ends of 1-dimention nano/micro materials were all well fixed.
3. be moved further substrate by CD-ROM drive motor, the single 1-dimention nano/micro materials that is fixed also can occur bending and deformation, and its deformation extent depends on the distance of substrate and scanning probe microscopy needle point.
4. when 1-dimention nano/micro materials bends deformation, the mode of measuring electric current by on-load voltage in needle point and substrate realizes the test to single 1-dimention nano/micro materials power electrical property.
The present invention compared with prior art, have the following advantages and the high-lighting effect: the present invention to single 1-dimention nano/micro materials in scanning probe microscopy in position the test of the crooked electrical property of exerting oneself do not need scanning probe microscopy is reequiped, rely on existing scanning probe microscopy can finish test to this performance.Simultaneously, the method for test is simple, the needed time of specimen very short (about 20 minutes), can finish detection to a large amount of Nano/micron materials in the short time.And single 1-dimention nano/micro materials two ends are all well fixed in the test process, do not have the current signal instability problem, 1-dimention nano/micro materials problem such as slide on electrode.The development and Design of 1-dimention nano/micro materials in fields such as MEMS (micro electro mechanical system), semiconductor devices and sensors that be embodied as of this method provides the high-efficiency reliable data result.
Description of drawings
Fig. 1 is that single zinc oxide micrometer line one end is fixed on the optical photograph on the scanning probe microscopy needle point.
Fig. 2 is fixed on needle point and suprabasil optical microscope photograph for single zinc oxide micrometer line two ends by conductive silver glue.
The optical microscope photograph that Fig. 3 is bent for single zinc oxide micrometer line.
Embodiment
As shown in Figure 1, utilize conductive silver glue that single 1-dimention nano/micro materials is fixed on the needle point of scanning probe microscopy.The CD-ROM drive motor of gated sweep probe microscope then allows the other end in contact conductive substrates of single 1-dimention nano/micro materials, and fixes with conductive silver glue, as shown in Figure 2.Be moved further conductive substrates by CD-ROM drive motor, this moment, single 1-dimention nano/micro materials will be bent, and as shown in Figure 3, its degree of crook depends on the distance that conductive substrates moves.Equally, move in the opposite direction by the controlling and driving motor, crooked single 1-dimention nano/micro materials can become straight again again.When single 1-dimention nano/micro materials is bent distortion, apply different voltage in needle point and substrate by the conductive module in the scanning probe microscopy, gather current value simultaneously, can realize power electric performance test the single 1-dimention nano/micro materials of bending.
Claims (3)
1. electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing, it is characterized in that single nano wire/micro wire is fixed on scanning probe tip and the conductive substrates, move up and down the flexural deformation of realization single nano wire/micro wire by the control substrate; In nano wire/micro wire bending,, realize the electricity performance measurement of nano wire/micro wire under bending by on scan-probe and conductive substrates, applying voltage testing current signals.
2. according to the described a kind of electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing of claim 1, it is characterized in that: the measurement to nano wire/micro wire electric property is the electrical measurement module of utilizing in the scanning probe microscopy.
3. according to the described a kind of electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing of claim 1, it is characterized in that: fixedly is elargol or the gold size that utilizes conduction to single nano wire/micro wire on scanning probe tip and conductive substrates.
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| CN101949957A (en) * | 2010-09-10 | 2011-01-19 | 东华大学 | Method for precisely moving nanowire by taking semi-conductor nanowire as probe |
| CN102565135A (en) * | 2011-12-27 | 2012-07-11 | 北京科技大学 | Electromechanical property test method based on in-situ bending of zinc oxide micron line |
| CN103031610A (en) * | 2012-12-07 | 2013-04-10 | 北京航空航天大学 | Method for preparing single ultra-long Cu nanowire and measuring electrical properties of the nanowire |
| CN106124543A (en) * | 2016-07-08 | 2016-11-16 | 东南大学 | Nano material based in situ TEM exchange electrical performance testing device and method |
| CN107089643A (en) * | 2017-04-26 | 2017-08-25 | 中国科学院理化技术研究所 | A kind of fixation of one-dimensional nano line and the method for controllable operating |
| CN110933278A (en) * | 2019-12-16 | 2020-03-27 | 昆山丘钛微电子科技有限公司 | Silver colloid resistivity control method of voice coil motor, camera module and jig |
| CN111487284A (en) * | 2019-10-30 | 2020-08-04 | 华中科技大学 | Phase change material nanowire assembling and testing device and method |
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| CN1995962A (en) * | 2006-12-29 | 2007-07-11 | 北京工业大学 | Device and method for testing in-situ mechanical property of single nano-wire in scanning electron microscope |
| CN101109687B (en) * | 2007-07-20 | 2010-06-02 | 北京工业大学 | Testing device for force-electricity property under nanowire original position stretching in transmission electron microscope |
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- 2009-11-20 CN CN2009102376761A patent/CN101713788B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949957A (en) * | 2010-09-10 | 2011-01-19 | 东华大学 | Method for precisely moving nanowire by taking semi-conductor nanowire as probe |
| CN101949957B (en) * | 2010-09-10 | 2013-04-17 | 东华大学 | Method for precisely moving nanowire by taking semi-conductor nanowire as probe |
| CN102565135A (en) * | 2011-12-27 | 2012-07-11 | 北京科技大学 | Electromechanical property test method based on in-situ bending of zinc oxide micron line |
| CN102565135B (en) * | 2011-12-27 | 2014-06-18 | 北京科技大学 | Electromechanical property test method based on in-situ bending of zinc oxide micron line |
| CN103031610A (en) * | 2012-12-07 | 2013-04-10 | 北京航空航天大学 | Method for preparing single ultra-long Cu nanowire and measuring electrical properties of the nanowire |
| CN106124543A (en) * | 2016-07-08 | 2016-11-16 | 东南大学 | Nano material based in situ TEM exchange electrical performance testing device and method |
| CN106124543B (en) * | 2016-07-08 | 2019-04-09 | 东南大学 | Nano material exchange electrical performance testing device and method based in situ TEM |
| CN107089643A (en) * | 2017-04-26 | 2017-08-25 | 中国科学院理化技术研究所 | A kind of fixation of one-dimensional nano line and the method for controllable operating |
| CN111487284A (en) * | 2019-10-30 | 2020-08-04 | 华中科技大学 | Phase change material nanowire assembling and testing device and method |
| CN111487284B (en) * | 2019-10-30 | 2022-04-29 | 华中科技大学 | Phase change material nanowire assembling and testing device and method |
| CN110933278A (en) * | 2019-12-16 | 2020-03-27 | 昆山丘钛微电子科技有限公司 | Silver colloid resistivity control method of voice coil motor, camera module and jig |
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