CN104281017A - Dry film resist remover composition and method for removing dry film resist using the same - Google Patents
Dry film resist remover composition and method for removing dry film resist using the same Download PDFInfo
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- CN104281017A CN104281017A CN201410259171.6A CN201410259171A CN104281017A CN 104281017 A CN104281017 A CN 104281017A CN 201410259171 A CN201410259171 A CN 201410259171A CN 104281017 A CN104281017 A CN 104281017A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
- G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- Architecture (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The present invention relates to a dry film resist remover composition and a dry film resist removing method using the same. The dry film resist remover composition of the present invention contains an oxyhydrogen compound, a chain amine compound, a triazole compound, and pure water at a predetermined mixing ratio2O), the dry film resist can be completely removed while preventing corrosion of the metal layer, and the stripper has an advantage of being reusable.
Description
Technical field
The present invention relates to the removing method of the dry film photoresist of dry film photoresist remover combination and use said composition.
Background technology
According to ball grid array (Ball Grid Array, BGA) increase of the demand of the high performance of product, miniaturization and filming, develop flip-chip-wafer-level package (Flip Chip Chip Scale Package, FCCSP), owing to having excellent performance, there is the trend increased gradually in its demand.The mode that FCCSP non-used use bonding wire (wire bonding) to connect but the mode using projection (bump) to connect are by chip (chip) and tellite (Printed Circuit Board, PCB) connection.On the other hand, in the past, use metal mask printing (Metal Mask Printing, MMP) method makes projection, recently, in order to ensure granular and the productivity of bump pitch (pitch), develop and use dry film photoresist (Dry Film Resist, DFR) blue mould printing (Blue Stencil Printing, BSP) method.
Described BSP method is conducive to formation or the productivity of guaranteeing projection, but when using dry film and strong base solution, compared with MMP method, there is organic pollution unfavorable condition increases, the problems such as damaged metal.Therefore, present circumstances is strongly required the new remover that exploitation is applicable to this BSP method.
On the other hand, Patent Document 1 discloses tellite remover combination, but be not the composition for peeling off dry film photoresist, and be used in the composition peeling off photoresist, there is removing material can not remove completely, the problem of remaining residue on substrate.
[prior art document]
[patent documentation]
No. 2000-0046480th, [patent documentation 1] KR published patent
Summary of the invention
Thus, the present inventor finds: by providing the dry film photoresist remover combination containing hydrogen-oxygen based compound, chain amines and triazole compounds, can prevent the dry film photoresist residue on substrate from remaining, the corrosion of metal level be minimized, thus achieves the present invention.
Therefore, first object of the present invention is to provide the dry film photoresist residue that can remove completely on substrate, makes the minimized dry film photoresist remover combination containing hydrogen-oxygen based compound, chain amines and triazole compounds of the corrosion of metal level simultaneously.
The second object of the present invention is to provide the method using described dry film photoresist remover combination removing dry film photoresist.
For realizing the dry film photoresist remover combination (hereinafter referred to as " the first invention ") of the of the present invention representational object lesson of described first object containing hydrogen-oxygen based compound, chain amines, triazole compounds and pure water (H
2o).
In the first invention, it is characterized in that, described composition contains the hydrogen-oxygen based compound of 0.5-15 % by weight, the chain amines of 1-40 % by weight, the triazole compounds of 0.5-5 % by weight and the pure water of surplus.
In the first invention, it is characterized in that, described composition contains the hydrogen-oxygen based compound of 0.5-5 % by weight, the chain amines of 5-15 % by weight, the triazole compounds of 0.5-5 % by weight and the pure water of surplus.
In the first invention, it is characterized in that, described composition is further containing glycol, organic acid, surfactant, organic solvent, defoamer or their potpourri.
In the first invention, it is characterized in that, described hydrogen-oxygen based compound is inorganic alkali hydroxide (No Machine ア Le カ リ ヒ De ロ キ シ De) or alkyl ammonium hydroxide.
In the first invention, it is characterized in that, described alkyl ammonium hydroxide is tetraethyl ammonium hydroxide, Tetramethylammonium hydroxide, TBAH, trimethyl benzyl ammonium hydroxide or their potpourri.
In the first invention, it is characterized in that, described alkyl ammonium hydroxide is Tetramethylammonium hydroxide.
In the first invention, it is characterized in that, described chain amines is for being selected from by monoethanolamine, diethanolamine, triethanolamine, Propanolamine, dipropanolamine, tripropanol amine, isopropanolamine, diisopropanolamine, triisopropanolamine, 2-(2-amino ethoxy) ethanol, 2-(2-aminoethyl amino) ethanol, N, N-dimethylethanolamine, N, N-diethyl ethanolamine, N-methylethanolamine, N-ehtylethanolamine, N-butylethanolamine and N-methylethanolamine composition group in more than one.
In the first invention, it is characterized in that, described chain amines is monoethanolamine.
In the first invention, it is characterized in that, described triazole compounds is methylbenzotrazole.
In the first invention, it is characterized in that, described pure water (H
2o) there is the ratio resistance of more than 18 (M Ω).
For realizing the removing method (hereinafter referred to as " the second invention ") of the dry film photoresist of the second object of the present invention, comprising: the step of laminating film on the substrate of circuit pattern being formed with regulation; By the step making the dry film Partial exposure of described lamination form dry film exposure portion and dry film non-exposed portion; Develop by making described dry film exposure portion and remove the step forming peristome; The circuit pattern being formed with described peristome arranges the step of solder ball; And the step that the dry film photoresist remover combination of described multiple object lesson of the present invention is contacted with described dry film non-exposed portion.
In the second invention, it is characterized in that, the removing method of described dry film photoresist comprises further: after described contact procedure, dry film photoresist residue is carried out the step of washing.
The dry film photoresist remover combination of multiple object lesson of the present invention has: the corrosion of the metal level contacted with described remover can be made to minimize, can remove the good effect of dry film photoresist simultaneously completely.
Accompanying drawing explanation
[Fig. 1] is for representing the process chart of the method for the dry film photoresist remover combination removing dry film photoresist using an object lesson of the present invention.
[Fig. 2 a] is for representing the photo of common gold solder pad (Au Pad).
[Fig. 2 b] is for representing the photo of the result using the dry film photoresist stripper of embodiments of the invention 3 to be peeled off by the dry film photoresist on gold solder pad.
[Fig. 2 c] is for representing the photo of the result using the dry film photoresist stripper of comparative example 2 of the present invention to be peeled off by dry film photoresist on gold solder pad.
[Fig. 3 a] is for representing the photo of common solder ball (Sn/Pb).
[Fig. 3 b] measures for representing the photo that there is free from corrosion result on the solder ball surface after using the dry film photoresist stripper of embodiments of the invention 3 to be removed by dry film photoresist.
[Fig. 3 c] measures for representing the photo that there is free from corrosion result on the solder ball surface after using the dry film photoresist stripper of comparative example 2 of the present invention to be removed by dry film photoresist.
[Fig. 4 a] is for representing the photo of common copper pad (Cu Pad).
[Fig. 4 b] measures for representing the photo that there is free from corrosion result on the copper pad surface after using the dry film photoresist stripper of embodiments of the invention 3 to be removed by dry film photoresist.
[Fig. 4 c] measures for representing the photo that there is free from corrosion result on the copper pad surface after using the dry film photoresist stripper of comparative example 2 of the present invention to be removed by dry film photoresist.
Description of reference numerals
10 circuit patterns
20 dry films
21 dry film non-exposed portions
22 dry film exposure portions
30 solder ball
100 substrates
Embodiment
Object of the present invention, specific advantage and new feature can be become definitely by the detailed description of the following drawings and preferred embodiment.In this instructions, during inscape additional reference mark to each accompanying drawing, when same inscape, even if represent in different drawings, also additional as far as possible same mark.In addition, the term of " simultaneously ", " another side ", " first ", " second " etc. is for an inscape and other inscape being distinguished the term used, and inscape is not by the restriction of these terms.Below, when the present invention will be described, eliminate the detailed description likely making the indefinite known technology of main idea of the present invention.
Below, with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail.
The dry film photoresist remover combination of representational object lesson of the present invention contains hydrogen-oxygen based compound, chain amines, triazole compounds and pure water.
Hydrogen-oxygen based compound
Hydrogen-oxygen based compound in the dry film photoresist remover combination of representational object lesson of the present invention is inorganic alkali hydroxide or alkyl ammonium hydroxide.As described alkyl ammonium hydroxide, tetraethyl ammonium hydroxide (Tetraethyl ammonium hydroxide), Tetramethylammonium hydroxide (Tetramethyl ammonium hydroxide), TBAH (Tetrabutyl ammonium hydroxide), trimethyl benzyl ammonium hydroxide (trimethylbenzil ammonium hydroxide) or their potpourri can be used, most preferably use Tetramethylammonium hydroxide.
Hydrogen-oxygen based compound in described remover combination has no particular limits, and can contain 0.5-15 % by weight, particularly preferably containing 0.5-5 % by weight.When the use amount of described hydrogen-oxygen based compound is less than 0.5 % by weight, because the penetrating power to the polymer substance forming dry film photoresist is poor, likely be difficult to remove described dry film photoresist completely, during more than 15 % by weight, the removing time of dry film photoresist is elongated, likely brings the harmful effect of Metallic film corrosion etc.
Chain amines
As the chain amines in the dry film photoresist remover combination of representational object lesson of the present invention, can use and be selected from by monoethanolamine (monoethanol amine), diethanolamine (diethanol amine), triethanolamine (triethanol amine), Propanolamine (propanol amine), dipropanolamine (dipropanol amine), tripropanol amine (tripropanol amine), isopropanolamine (isopropanol amine), diisopropanolamine (diisopropanol amine), triisopropanolamine (triisopropanol amine), 2-(2-amino ethoxy) ethanol (2-(2-aminoethoxy) ethanol), 2-(2-aminoethyl amino) ethanol (2-(2-aminoethylamino) ethanol), N, N-dimethylethanolamine (N, N-dimethylethanol amine), N, N-diethyl ethanolamine (N, N-diethylethanol amine), N-methylethanolamine (N-methylethanol amine), N-ehtylethanolamine (N-ethylethanol amine), more than one in the group that N-butylethanolamine (N-butylethanol amine) and N-methylethanolamine (N-methylethanol amine) form, most preferably use monoethanolamine.
Chain amines in described remover combination has no particular limits, and can contain 1-40 % by weight, particularly preferably containing 5-15 % by weight.When the use amount of described chain amines is less than 1 % by weight, likely be difficult to remove dry film photoresist completely, during more than 40 % by weight, because the content of other material contained in described remover combination reduces, the removing time of dry film photoresist is elongated, and metal film likely corrodes.
Triazole compounds
Triazole compounds in the dry film photoresist remover combination of representational object lesson of the present invention is be used as the compound of antiseptic, and the functional group contained by described triazole compounds is chemical or physical bond with metal film.By described triazole compounds, fundamentally can prevent electron exchange between the remover playing electrolytical effect and metal film, therefore, metal film is not oxidized, can not corrode.As described triazole compounds, most preferably use methylbenzotrazole (tolyltriazole).
Triazole compounds in described remover combination has no particular limits, preferably containing 0.5-5 % by weight.When the use amount of described triazole compounds is less than 0.5 % by weight, likely be difficult to play with the dry film photoresist stripper containing amines the effect preventing from corroding, during more than 5 % by weight, because the content of other material contained in described remover combination reduces, can not remove dry film photoresist completely, economy likely reduces.
Pure water (H
2o)
As the pure water in the dry film photoresist remover combination of representational object lesson of the present invention, the pure water filtered by ion exchange resin can be used, preferably there is the ratio resistance of more than 18 (M Ω).
The use amount of the pure water in described remover combination is not particularly limited, and can use the amount of the ratio of components degree not affecting other above-mentioned composition.
Dry film photoresist remover combination, in the scope not damaging effect of the present invention, can further containing other composition.As these compositions, glycol, organic acid, surfactant, organic solvent, defoamer or their potpourri can be contained.
As described glycol, can use in the group being selected from and being made up of ethylene glycol monobutyl ether (ethyleneglycol monobutyl ether), diethylene glycol monomethyl ether (diethylene glycol monomethylether), diethylene glycol monobutyl ether (diethylene glycol monobutylether), diethylene glycol monoethyl ether (diethylene glycol monoethylether), ethylene glycol (ethylene glycol), hexanediol (hexylene glycol) and glycerine (glycerol) more than one.
As described organic acid, can use in the group being selected from and being made up of acetic acid (acetic acid), citric acid (citric acid), oxalic acid (oxalic acid) and sad (caprylic acid) more than one.
As described organic solvent, most preferably use dimethyl sulfoxide (dimethylsulfoxide).
Use the method for the remover combination removing dry film photoresist of representational object lesson of the present invention, can be clear and definite with reference to the process chart illustrated in Fig. 1.First, on the substrate 100 of circuit pattern 10 being formed with regulation after laminating film 20, by the described dry film Partial exposure by lamination, form dry film exposure portion 22 and dry film non-exposed portion 21.Then, after described dry film non-exposed portion 21 is formed peristome by the removing of use developer solution, the circuit pattern 10 of described peristome forms solder ball 30.Then, dry film photoresist remover combination of the present invention is used to remove dry film exposure portion 22.The described remover combination of the application of the invention, have and the corrosion of the solder ball 30 on the circuit pattern 10 of the lower floor being present in dry film non-exposed portion 21 and described circuit pattern 10 can be made to minimize, and the good effect in dry film exposure portion 22 can be removed completely.In addition, be applicable to described remover combination of the present invention, in the process in removing dry film exposure portion 22, because the residue in described dry film exposure portion 22 is insoluble in remover combination, the advantage of described remover combination after thus having, can be re-used.
In addition, remove the method for described dry film photoresist, behind removing dry film exposure portion 22, can carry out the process of dry film photoresist washing residue further.
Below, use embodiment and comparative example to further illustrate the present invention, but following example not delimit the scope of the invention.
Embodiment 1-15
Use the composition and ratio of components recorded in following table 1, under normal temperature (25 DEG C), stir about prepares dry film photoresist stripper in 2 hours.
Comparative example 1-5
Similarly, use the composition and ratio of components recorded in following table 1, under normal temperature (25 DEG C), stir about prepares dry film photoresist stripper in 2 hours.
[table 1]
TMAH: Tetramethylammonium hydroxide (tetramethyl ammonium hydroxide)
NMP:1-N-methyl-2-2-pyrrolidone N-(1-methyl-2-pyrrolidone)
MEA: monoethanolamine (monoethanol amine)
TT: methylbenzotrazole (tolyltriazole)
NaOH: NaOH (sodium hydroxide)
HMTA: hexamethylene tetramine (hexamethylenetetra amine)
peeling force, there is the determination test of the Degree of Ageing of corrosion-free and stripper
On the substrate being formed with copper circuit pattern and solder ball, by roller (roll) compress mode at temperature about 95 DEG C, pressure 3kgf/cm
2laminated dry film photoresist makes test film.The test film that the stripper prepared in embodiment shown in described table 1 and comparative example is about 2kg and described preparation is added jetting system, at about 50 DEG C, 1kgf/cm
2condition under spray about 4 minutes after, with pure water (H
2o) clean, use nitrogen drying.Described test film is observed to measure peeling force and to have corrosion-free with naked eyes and microscope (SEM).In addition, process copper pad (copper Pad) test film to 100 slice, with the variable color of the aging copper pad caused of visual inspection stripper.
[table 2]
peeling force measures
As described in shown in table 2, from the result measuring peeling force, when using the stripper prepared in embodiment 1-15, compared with when using the stripper prepared in comparative example 1-5, demonstrate more excellent effect.
Fig. 2 a is the photo representing common gold solder pad (Au Pad).
When being compared by the photo of Fig. 2 b and Fig. 2 c, Fig. 2 b is the photo after using the stripper of preparation in embodiment 3 to remove dry film photoresist, and known surface does not have residue.But Fig. 2 c is the photo after using the stripper of preparation in comparative example 2 to remove dry film photoresist, and the outside that can confirm weld pad remains residue, and the edge part of weld pad also remains residue.
there is free from corrosion mensuration
As described in shown in table 2, free from corrosion result is had from the solder ball (Sn/Pb) after mensuration removing dry film photoresist and copper pad (Cu Pad), when using the stripper prepared in embodiment 1-15, compared with during the stripper prepared in use comparative example 1-5, demonstrate more excellent effect.
Fig. 3 a and Fig. 4 a is the photo representing common solder ball and copper pad.
When being compared by the photo of Fig. 3 b and Fig. 3 c, Fig. 3 b is the photo on the solder ball surface after the stripper removing dry film photoresist of preparation in use embodiment 3, can confirm described surface and not be corroded.But Fig. 3 c is the photo on the solder ball surface after the stripper removing dry film photoresist using preparation in comparative example 2, described surface can be confirmed and to be corroded and impaired.
Similarly, when being compared by the photo of Fig. 4 b and Fig. 4 c, Fig. 4 b is the photo on the copper pad surface after the stripper removing dry film photoresist of preparation in use embodiment 3, can confirm described surface and not be corroded.But Fig. 4 c is the photo on the copper pad surface after the stripper removing dry film photoresist using preparation in comparative example 2, described surface can be confirmed and to be corroded and impaired.
Above, explain invention has been based on specific embodiment, but it is that the present invention is not limited thereto for illustrating the present invention, as long as clearly persons having ordinary knowledge in the art, just can carry out being out of shape or improveing in technological thought of the present invention.
Simple distortion of the present invention and even change all belong to scope of the present invention, and concrete protection domain of the present invention becomes clear and definite by the entitlement requests book added.
Claims (13)
1. a dry film photoresist remover combination, is characterized in that, said composition contains hydrogen-oxygen based compound, chain amines, triazole compounds and pure water (H
2o).
2. dry film photoresist remover combination according to claim 1, wherein, described composition contains the hydrogen-oxygen based compound of 0.5-15 % by weight, the chain amines of 1-40 % by weight, the triazole compounds of 0.5-5 % by weight and the pure water of surplus.
3. dry film photoresist remover combination according to claim 1, wherein, described composition contains the hydrogen-oxygen based compound of 0.5-5 % by weight, the chain amines of 5-15 % by weight, the triazole compounds of 0.5-5 % by weight and the pure water of surplus.
4. dry film photoresist remover combination according to claim 1, wherein, described composition is further containing glycol, organic acid, surfactant, organic solvent, defoamer or their potpourri.
5. dry film photoresist remover combination according to claim 1, wherein, described hydrogen-oxygen based compound is inorganic alkali hydroxide or alkyl ammonium hydroxide.
6. dry film photoresist remover combination according to claim 5, wherein, described alkyl ammonium hydroxide is tetraethyl ammonium hydroxide, Tetramethylammonium hydroxide, TBAH, trimethyl benzyl ammonium hydroxide or their potpourri.
7. dry film photoresist remover combination according to claim 5, wherein, described alkyl ammonium hydroxide is Tetramethylammonium hydroxide.
8. dry film photoresist remover combination according to claim 1, wherein, described chain amines is for being selected from by monoethanolamine, diethanolamine, triethanolamine, Propanolamine, dipropanolamine, tripropanol amine, isopropanolamine, diisopropanolamine, triisopropanolamine, 2-(2-amino ethoxy) ethanol, 2-(2-aminoethyl amino) ethanol, N, N-dimethylethanolamine, N, N-diethyl ethanolamine, N-methylethanolamine, N-ehtylethanolamine, N-butylethanolamine and N-methylethanolamine composition group in more than one.
9. dry film photoresist remover combination according to claim 1, wherein, described chain amines is monoethanolamine.
10. dry film photoresist remover combination according to claim 1, wherein, described triazole compounds is methylbenzotrazole.
11. dry film photoresist remover combinations according to claim 1, wherein, described pure water (H
2o) there is the ratio resistance of more than 18 (M Ω).
The removing method of 12. 1 kinds of dry film photoresists, is characterized in that, this removing method comprises:
The step of laminating film on the substrate of circuit pattern being formed with regulation;
By the step making the dry film Partial exposure of described lamination form dry film exposure portion and dry film non-exposed portion;
Develop by making described dry film non-exposed portion and remove the step forming peristome;
The circuit pattern being formed with described peristome arranges the step of solder ball; And
Make the step that the dry film photoresist remover combination in claim 1-11 described in any one contacts with described dry film exposure portion.
The removing method of 13. dry film photoresists according to claim 12, wherein, this removing method comprises further: after described contact procedure, dry film photoresist residue is carried out the step of washing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2013-0079083 | 2013-07-05 | ||
| KR1020130079083A KR101420571B1 (en) | 2013-07-05 | 2013-07-05 | Remover composition for dryfilm resist and removing method using the same |
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| Publication Number | Publication Date |
|---|---|
| CN104281017A true CN104281017A (en) | 2015-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410259171.6A Pending CN104281017A (en) | 2013-07-05 | 2014-06-11 | Dry film resist remover composition and method for removing dry film resist using the same |
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| Country | Link |
|---|---|
| JP (1) | JP2015014791A (en) |
| KR (1) | KR101420571B1 (en) |
| CN (1) | CN104281017A (en) |
| TW (1) | TW201502723A (en) |
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| CN109778210A (en) * | 2018-08-09 | 2019-05-21 | 苏州纳勒电子科技有限公司 | It is a kind of to go film liquid on circuit board |
| CN112711176A (en) * | 2020-12-17 | 2021-04-27 | 芯越微电子材料(嘉兴)有限公司 | Photoresist stripping liquid applicable to semiconductor field and preparation method |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6412377B2 (en) * | 2013-09-11 | 2018-10-24 | 花王株式会社 | Cleaning composition for resin mask layer and method for producing circuit board |
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Also Published As
| Publication number | Publication date |
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| TW201502723A (en) | 2015-01-16 |
| JP2015014791A (en) | 2015-01-22 |
| KR101420571B1 (en) | 2014-07-16 |
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