CN104215338B - A kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic and preparation method thereof - Google Patents
A kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic and preparation method thereof Download PDFInfo
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- CN104215338B CN104215338B CN201410439239.9A CN201410439239A CN104215338B CN 104215338 B CN104215338 B CN 104215338B CN 201410439239 A CN201410439239 A CN 201410439239A CN 104215338 B CN104215338 B CN 104215338B
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Abstract
The invention discloses a kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic and preparation method thereof, the greenhouse detector of the integrated piezoelectric pyroelectricity characteristic includes：The substrate for covering successively from the bottom to top, dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer radiation wavelength absorbed layer；Wherein, cavity body is formed between substrate and dielectric layer, dielectric layer is at the top of cavity body, and dielectric layer is extended on substrate in the side of the cavity body, so that dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer radiation wavelength absorbed layer are integrally formed cantilever beam structure, the relatively low technical problem of detection performance that there is detector in the prior art is solved, the technique effect of the detection performance that improve detector is realized.
Description
Technical field
The present invention relates to infrared and terahertz emission Detection Techniques field, more particularly to a kind of integrated piezoelectric pyroelectricity characteristic
Greenhouse detector and preparation method thereof.
Background technology
In the prior art, heat energy is translated into after heat radiation is absorbed by object, thermal detector exactly make use of this spoke
The fuel factor penetrated, will cause temperature to raise after the sensing element of thermal detector absorbs radiation, make the related physical of sensing element
Parameter is changed, and the radiation that detector is absorbed just is can determine that by the measurement to these physical parameters and its change.
Under DC Electric Field, the charged particle (electronics, atomic nucleus etc.) in dielectric will be acted on by electric field force,
Generally speaking, positive charge is intended to negative electrode, negative electrical charge and is intended to anode, so, a dielectric surface positively charged, relative
Surface is negatively charged, and this phenomenon is call dielectric " electric polarization ".For most of dielectrics, removal voltage it
Afterwards, polarized state disappears immediately, but, there is the dielectric of a class referred to as " ferroelectric ", still remain after applied voltage removal
Polarized state.
Typically, ferroelectric polarization intensity Ps (electric charge in unit area) is relevant with temperature, and temperature is raised, polarization intensity
Reduce.Temperature is raised to a certain extent, and polarization will suddenly disappear, and this temperature is referred to as curie point, is tapped in Curie, polarization
Intensity Ps is the function of temperature, the temperature-sensitive class detector referred to as pyroelectric detector being made using this relation.
The construction of pyroelectric detector is that sensing element is made film, and electrode is made on two surfaces of sensing element,
Similar to the construction of capacitor, in order to ensure absorption of the sensitive layer to radiating, film absorption is prepared on pyroelectric detector top
Layer absorbs radiation.When in radiation exposure to the electric heating film for having polarized, cause film temperature to raise, make its polarization strong
Degree (electric charge in unit area) is reduced, and the electric charge on surface is reduced, and is equivalent to release a part of electric charge, therefore, it is called heat
Release electric transducer.
Pyroelectricity material also has piezo-electric effect simultaneously, i.e., when being subject to external force effect to deform upon in a certain direction, in it
Portion can produce polarization phenomena, meanwhile, occurring positive and negative opposite electric charge on two apparent surfaces, when removing external force, crystal recovers
To uncharged state, therefore applying external force to pyroelectricity material can produce piezoelectric charge to export.
In the prior art, also pyroelectricity characteristic is not combined with piezoelectric property and is used as to infrared and THz wave
Detector, therefore, there is the relatively low technical problem of detection performance in prior art.
The content of the invention
The embodiment of the present application solves prior art by providing a kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic
The relatively low technical problem of the middle detection performance that there is detector, realizes the technique effect of the detection performance that improve detector.
The embodiment of the present application provides a kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic, including：
The substrate for covering successively from the bottom to top, dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer
Radiation wavelength absorbed layer；
Wherein, cavity body is formed between substrate and dielectric layer, dielectric layer is at the top of cavity body, and dielectric layer is described
The side of cavity body is extended on substrate so that dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer spoke
Penetrate wavelength absorption layer and cantilever beam structure is integrally formed.
Further, pyroelectricity material layer is specially lithium tantalate, lithium niobate, PZT, BST, PVDF and its mixture.
Further, dielectric layer is specially the material for causing deformation by temperature change.
Further, top layer radiation wavelength absorbed layer be specifically infrared in the range of 700nm~3mm of absorbing wavelength or
THz wave.
On the other hand, present invention also provides a kind of preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic,
Including following content：
A) in Grown sacrifice layer and chemical wet etching is carried out, is formed and sacrifice figure；
B) dielectric layer is formed using PECVD on substrate so that dielectric layer covers the side and top of sacrifice layer, and to being situated between
Matter layer is patterned, and exposes electrode connecting interface；
C) lower electrode layers are formed using magnetron sputtering method on dielectric layer, and on lower electrode layer using photoetching corrosion or
Photoresist lift off is patterned；
D) pyroelectricity material layer is formed using sol-gel process or magnetron sputtering method on lower electrode layer；
E) upper electrode layer is formed using magnetron sputtering method on pyroelectricity material layer, photoetching corrosion is used on upper electrode layer
Or photoresist lift off is patterned；
F) top layer radiation wavelength absorbed layer is formed using evaporation or magnetron sputtering method or spin-coating method on upper electrode layer；
G) device releasing sacrificial layer is bombarded using oxygen gas plasma.
Further, after step b), the deformation of dielectric layer is controlled highly to be less than sacrificial layer thickness.
Further, after step e), pyroelectricity material layer is made annealing treatment.
Further, after being annealed to pyroelectricity material layer, polarization process is carried out to pyroelectricity material layer.
One or more technical schemes provided in the embodiment of the present application, at least have the following technical effect that or advantage：
1st, because the greenhouse detector of the integrated piezoelectric pyroelectricity characteristic for using includes the lining for from top to bottom covering successively
Bottom, dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer radiation wavelength absorbed layer, wherein, substrate with
Cavity body is formed between dielectric layer, dielectric layer is extended on substrate at the top of cavity body, and dielectric layer in the side of cavity body,
So that dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer radiation wavelength absorbed layer are integrally formed cantilever beam
Structure, solves the detector for not in the prior art being combined piezoelectric property and pyroelectricity characteristic, therefore, prior art
The relatively low technical problem of detection performance, and then realize and be combined piezoelectric property and pyroelectricity characteristic, improve detector
Detection performance.
2nd, the preparation method of the room temperature creep of Piezoelectric Pyroelectric characteristic is employed so that preparation process is simple is reasonable, easily
Large area prepare with it is integrated, it is compatible with MEMS technology, can be widely applied to infrared estimated THz wave Detection Techniques field.
Brief description of the drawings
Fig. 1 a~Fig. 1 g are the preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic in embodiment of the present invention
Process step schematic diagram；
Fig. 2 is the structural representation of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic in embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is solved by providing a kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic and preparation method thereof
There is the low technical problem of detection performance in detector in the prior art of having determined, and then realize the detection performance for improving detector
Technique effect.
The technical problem relatively low in order to solve above-mentioned detector detection performance, general thought is as follows：
The present invention provide a kind of integrated piezoelectric pyroelectricity characteristic greenhouse detector, the detector include from the bottom to top according to
The substrate of secondary covering, dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer radiation wavelength absorbed layer, its
In, cavity body is formed between substrate and dielectric layer, dielectric layer is in the top of cavity body and the side cladding adjacent with top
Cavity body, and dielectric layer extends to substrate in the side of cavity body so that dielectric layer, lower electrode layer, pyroelectricity material layer, upper electricity
Pole layer and top layer radiating layer are integrally formed cantilever beam structure.Due to having pyroelectricity material layer and cavity body structure so that should
Detector has piezoelectric property and pyroelectricity characteristic, so as to improve the detection performance of detector.
In order to be better understood from above-mentioned technical proposal, below in conjunction with Figure of description and specific embodiment to upper
Technical scheme is stated to be described in detail.
A kind of preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic that the present invention is provided, such as Fig. 1 a~Fig. 1 g
It is shown, including following content：
A) in Grown sacrifice layer and chemical wet etching is carried out, is formed and sacrifice figure；
Specifically, sacrifice layer is made on the substrate with electrode connecting interface, using polymer P SPI as sacrifice layer,
Can be the porous silicon or phosphorosilicate glass etc. of polyimides, silica, oxidation, by its it is graphical after use 350 degrees Celsius again
Solidification.
B) dielectric layer is formed using PECVD on substrate so that dielectric layer covers the side and top of sacrifice layer, and to being situated between
Matter layer is patterned, and exposes electrode connecting interface；
Specifically, the dielectric layer specifically uses silicon nitride film, and film thickness is 0.1~1 μm.
C) lower electrode layer is formed using magnetron sputtering method on dielectric layer, and photoetching corrosion or light is used on lower electrode layer
Photoresist is peeled off and is patterned；The thickness of the electrode layer is 0.05~0.5 μm.
D) pyroelectricity material layer is formed using sol-gel process or magnetron sputtering method on lower electrode layer；
Specifically, it is necessary to prepare lithium tantalate presoma, specific preparation process is such as before pyroelectricity material layer is formed
Under：
Step one, preparation reaction raw materials, anhydrous acetic acid lithium (C2H3LiO2, 99.9%) and ethanol tantalum (C10H25O5Ta,
99.9%) it is initiation material, with 1-2 propane diols (C3H8O2, 99.9%) and it is solvent.
Step 2,4.061 grams of anhydrous acetic acid lithiums are weighed, be then dissolved in being stirred in 110 degrees Celsius of magnetic in 50 milliliters of 1-2 propane diols
Dissolving 3 hours is mixed, 25 grams of ethanol tantalum is according to mol ratio 1:During 1 proportioning, 4.061 grams of anhydrous acetic acid lithiums, ethanol tantalum molecule are weighed
Amount 406.5, anhydrous acetic acid lithium molecular weight 65.99.
Step 3,5 milliliters of butyric acid mixing regulation ph values 4-5 of addition, it is ensured that the solution is in acid state, is conducive to keeping molten
The stability of glue is in order to avoid colloidal sol condenses rapidly.
In step 4, addition 25 grams of ethanol tantalums to lithium tantalate presoma, start reaction under 130 degrees Celsius of magnetic stirrings, instead
48 hours between seasonable.
Step 5, the reaction of lithium tantalate (LiTaO3) precursor solution are in brown color, and lithium tantalate (LiTaO3) presoma is taken
Go out and be cooled to room temperature, stand lithium tantalate (LiTaO3) colloidal sol for forming stabilization for 24 hours.So as to obtain pyroelectricity material layer.
Material is thus formed the preparation of the presoma of lithium tantalate.
Certainly, pyroelectricity material layer can be not only lithium tantalate, can also be lithium niobate, PZT, BST, PVDF more or
It is made of above two or two or more mixtures, is just no longer described in detail in the embodiment of the present application.
The above-mentioned lithium tantalate presoma being made is spin-coated to substrate surface, spin coating, whirl coating condition are spin coating 500rpm, 15S,
Whirl coating 3000rpm, 30S.
Then pyroelectricity material layer is annealed；So as to improve the crystal property of pyroelectricity material layer.
Specifically, the wet pyroelectricity material that will be obtained is placed in annealing furnace, is made annealing treatment so that pyroelectricity material
Bed of material drying, organic matter pyrolysis and crystallization, repeat spin coating and anneal 5 times, so that the pyroelectricity material layer of 0.8 μ m-thick is obtained, due to
Once preparing thickness deficiency can carry out multilayer repetition preparation, so as to strengthen the thickness of pyroelectricity material layer, specifically, thickness
In 0.3~2 μ m.
Polarization process is carried out to the pyroelectricity material after annealing so that, polarization intensity is better than 1*10-8C/m2K, so that
Obtaining pyroelectricity material has good pyroelectric property.
Then, upper electrode layer e) is formed using magnetron sputtering method on pyroelectricity material layer, light is used on upper electrode layer
Carve corrosion or photoresist lift off is patterned；Specifically using magnetron sputtering apparatus prepare Ti electrode layers, thickness be 0.05~
0.5μm。
Then, f) top layer radiation wavelength is formed using evaporation or magnetron sputtering method or spin-coating method on upper electrode layer to absorb
Layer；
Specifically, the top layer radiation wavelength absorbed layer is the coating of CNT and the mixed solution of PSS.
Finally, device releasing sacrificial layer g) is bombarded using oxygen gas plasma.So that the knot after releasing sacrificial layer
Structure is in cantilever beam structure.
By more than during the greenhouse detector of integrated piezoelectric pyroelectricity characteristic is prepared, by structure as can be seen that
Pyroelectricity material Rotating fields in the cavity body structure and preparation process that are formed after releasing sacrificial layer so that the detector is simultaneously
With piezoelectric property and pyroelectricity characteristic, therefore, it can effectively absorb infrared and THz wave.
Based on identical inventive concept, the greenhouse that the embodiment of the present invention additionally provides a kind of integrated piezoelectric pyroelectricity characteristic is visited
Device is surveyed, as shown in Fig. 2 including：The substrate 201 for covering successively from the bottom to top, dielectric layer 202, lower electrode layer 203, pyroelectricity material
The bed of material 204, upper electrode layer 205 and top layer radiation wavelength absorbed layer 206；Wherein, the shape between substrate 201 and dielectric layer 202
Into cavity body, dielectric layer 202 coats cavity body at the top of cavity body and the side adjacent with top, and dielectric layer 202 exists
The side of cavity body is extended on substrate 201 so that dielectric layer 202, lower electrode layer 203, pyroelectricity material layer 204, Top electrode
Layer 205 and top layer radiation wavelength absorbed layer 206 are integrally formed cantilever beam structure.
Specifically, cavity body is obtained by releasing sacrificial layer.
Wherein, the electrode connecting interface 207 exposed on dielectric layer 202 is connected to substrate 201 for upper electrode layer 205,
Lower electrode layer 206 is connected to substrate 201.
In a particular embodiment, pyroelectricity material layer 204 is specially lithium tantalate, lithium niobate, PZT, BST, PVDF, or
The above-mentioned several mixture of person.
Dielectric layer is specifically the material for causing deformation by temperature change, specially can be silicon nitride etc..
Top layer radiation wavelength absorbed layer is specifically infrared or THz wave of the absorbing wavelength in the range of 700nm~3mm
Absorbed layer.
Therefore, be can be seen that with cavity body by the structure of the greenhouse detector of above-mentioned integrated piezoelectric pyroelectricity characteristic
Structure causes that structure sheaf more than dielectric layer forms cantilever beam structure, therefore, with piezoelectric property；And, in upper electrode layer 205
There is pyroelectricity material layer 204 between lower electrode layer 203, therefore, it may have pyroelectricity characteristic.When infrared or Terahertz amplitude
When being mapped on the detecting structure of the greenhouse detector of the integrated piezoelectric pyroelectricity characteristic so that piezoelectric charge and pyroelectricity lotus are defeated
Go out, enhance infrared or THz wave detection performance.
Simultaneously as the preparation process is simple of the greenhouse detector of the integrated piezoelectric pyroelectricity characteristic is rationally, easy large area
Prepare and integrated, it is compatible with MEMS technology, can be widely applied to infrared and THz wave Detection Techniques field.
, but those skilled in the art once know basic creation although preferred embodiments of the present invention have been described
Property concept, then can make other change and modification to these embodiments.So, appended claims are intended to be construed to include excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification without deviating from essence of the invention to the present invention
God and scope.So, if these modifications of the invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (7)
1. a kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic, it is characterised in that including：
The substrate for covering successively from the bottom to top, dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer are radiated
Wavelength absorption layer；
Wherein, cavity body is formed between substrate and dielectric layer, dielectric layer is at the top of cavity body, and dielectric layer is in the cavity
The side of body is extended on substrate so that dielectric layer, lower electrode layer, pyroelectricity material layer, upper electrode layer and top layer radiated wave
Absorbed layer long is integrally formed cantilever beam structure, and dielectric layer is specially the material for causing deformation by temperature change.
2. the greenhouse detector of integrated piezoelectric pyroelectricity characteristic according to claim 1, it is characterised in that pyroelectricity material
Layer is specially lithium tantalate, lithium niobate, PZT, BST, PVDF and its above two or two or more mixtures.
3. the greenhouse detector of integrated piezoelectric pyroelectricity characteristic according to claim 1, it is characterised in that top layer radiated wave
Absorbed layer long is specifically infrared or THz wave absorbed layer of the absorbing wavelength in the range of 700nm~3mm.
4. a kind of preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic, it is characterised in that including following content：
A) in Grown sacrifice layer and chemical wet etching is carried out, is formed and sacrifice figure；
B) dielectric layer is formed using PECVD on substrate so that dielectric layer covers the side and top of sacrifice layer, and to dielectric layer
It is patterned, exposes electrode connecting interface；
C) lower electrode layer is formed using magnetron sputtering method on dielectric layer, and photoetching corrosion or photoresist is used on lower electrode layer
Stripping is patterned；
D) pyroelectricity material layer is formed using sol-gel process or magnetron sputtering method on lower electrode layer；
E) upper electrode layer is formed using magnetron sputtering method on pyroelectricity material layer, photoetching corrosion or light is used on upper electrode layer
Photoresist is peeled off and is patterned；
F) top layer radiation wavelength absorbed layer is formed using evaporation or magnetron sputtering method or spin-coating method on upper electrode layer；
G) device releasing sacrificial layer is bombarded using oxygen gas plasma.
5. the preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic according to claim 4, it is characterised in that
After step b), the deformation of dielectric layer is controlled highly to be less than sacrificial layer thickness.
6. the preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic according to claim 4, it is characterised in that
After step d), pyroelectricity material layer is made annealing treatment.
7. the preparation method of the greenhouse detector of integrated piezoelectric pyroelectricity characteristic according to claim 6, it is characterised in that
After being made annealing treatment to pyroelectricity material layer, polarization process is carried out to the pyroelectricity material layer after annealing.
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| FR3046879B1 (en) * | 2016-01-20 | 2022-07-15 | Ulis | METHOD FOR MANUFACTURING A MICRO-ENCAPSULATED ELECTROMAGNETIC RADIATION DETECTOR |
| CN106655891B (en) * | 2016-10-17 | 2018-12-21 | 湖北民族学院 | Pyroelectricity/piezoelectric energy collector and its integrated system |
| CN109004059B (en) * | 2017-06-26 | 2019-11-05 | 苏州科技大学 | Wide temperate zone terahertz wave detector |
| CN107331600A (en) * | 2017-07-10 | 2017-11-07 | 苏州益可泰电子材料有限公司 | Light wave detection substrate and preparation method thereof |
| CN108562360B (en) * | 2018-03-20 | 2020-11-27 | 上海集成电路研发中心有限公司 | Novel infrared sensor structure |
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