CN1333569A - Micromechanical thermoelectric pile infrared detector array with inclined drawn suspension beam support membrane structure - Google Patents
Micromechanical thermoelectric pile infrared detector array with inclined drawn suspension beam support membrane structure Download PDFInfo
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Abstract
The present invention relates to a micromechanical thermoelectric pile infrared deteclor array and its production method. Its structure is characterized by that the supporting film makes an angle of 45 deg. with frame body, its periphery is environed by atmosphere medium, one end is fixedly supported, another end is connected with two points of base body. It also can be divided into two kinds of discrete type and single corrosino hole type, the former is independent corrosion hole structure, between corrosion holes they are partitioned by silicon substrate, the latter is the structure with one shared corrosion hole, between over beams they are partitioned by corrosion hole. Its production method is characterized by that firstly, depositing Si3N4 layer, depositing SiO2 layer, more depositing polycrystalline silicon layer, ion implantation, photoetching, corrosion, plasma etching and using various corrisve of silicon to make corrosion, removing body silicon to form side wall made into (III) face, making over beam have an angle of 45 deg. with base boyd, the middle is partitioned by pore space so as to support diagonal over-beam support film structure. It can further improve thermopile structure, raise thermoelectric conversion efficiency of detector and can obtain high sensitivity.
Description
Technical field
The present invention relates to a kind of new micromechanical thermoelectric pile infrared detector array and manufacture method with inclined drawn suspension beam support membrane structure.Belong to the Infrared Detectors field.
Background technology
The application of Infrared Detectors is very extensive, is used for military use, and infrared imaging, infrared reconnaissance, infrared tracking, infrared guidance, infrared early warning and infrared counteraction etc. are arranged; In civilian, infrared measurement of temperature, infrared hygrometric, infrared treatment, infrared detection, infrared remote sensing, infrared alarm etc. are arranged.Press the detector working mechanism and distinguish, Infrared Detectors can be divided into thermal detector and photon detector two big classes.Compare with photon detector, thermal detector has broad spectrum response, low cost, easy to operate and to advantage such as ambient temperature is insensitive, but the response time is slower.Therefore in gas analysis, intrusion alarm generally adopts during non-contact temperature measuring etc. are used.Thermopile IR detector is the class in the thermal detector, and other one big class is a pyroelectric detector.Thermopile IR detector is made up of numerous thermocouples, and its operation principle is a Seebeck effect, just thermoelectric effect.When two kinds of different materials forming thermocouple constitute the closed-loop path,, will in loop, produce electromotive force if having temperature difference between two nodes.
Previous thermopile IR detector is the method for utilizing mask vacuum coating, the thermocouple material deposited to obtain on plastics or the alumina substrate, and size of devices is bigger, and is difficult for producing in batches.In early 1980s, flourish along with microelectric technique proposed the notion of micromachined thermopile infrared detector, and K.D.Wise etc. utilize the micromechanics manufacturing technology to produce thermopile IR detector at first.In recent years,, more developed detector array, be used for every field such as infrared imaging in order to improve sensitivity and resolution.Compare with thermopile IR detector in the past, the advantage of micromachined thermopile infrared detector is:
1. has high sensitivity, the loose operational environment and the spectral response of non-constant width;
2. with the standard ic process compatibility, with low cost and suitable batch process.
In micromachined thermopile infrared detector, the principal element that influences device performance has: thermocouple material, thermal reactor structure and infrared absorption layer.In order to obtain high performance detector, the thermocouple material will have high Seebeck coefficient, and the thermal reactor structure will have low heat conductivity (being high thermal resistance), and infrared absorption layer will have high responsiveness to infrared band simultaneously.The previous thermocouple material that adopts is bismuth (Bi) and antimony (Sb), but because these materials and standard integrated circuit technology are incompatible, is therefore replaced by silicon, polysilicon and metal gradually later on.In infrared absorbing material, what extensively adopt now is polymer (Polymer) black matrix.Above-mentioned two relative variabilities are less, and therefore in influencing the factor of detector performance, the thermal reactor structure has just played leading role.
In order to reduce heat conduction, improve detector performance, micromachined thermopile infrared detector generally adopts membrane structure, in order to play good effect of heat insulation.Now the membrane structure of using has two classes, i.e. closing membrane (close membrane) structure and overarm (cantilever) structure, and wherein closing membrane is meant that the support membrane of thermal reactor is the composite dielectric film of whole layer, is generally silicon nitride and silica composite membrane.The advantage of this membrane structure is Stability Analysis of Structures, and owing to film links to each other with matrix everywhere, so affected by force is little, and film itself is difficult for breaking in the manufacture process; Shortcoming is that effect of heat insulation is bad, and after the INFRARED ABSORPTION district absorbed infrared radiation, heat can be propagated along the dielectric support film, and and not exclusively along thermocouple to propagating, so heat dissipation is big, conversion efficiency of thermoelectric is low, sensitivity is little.Surrounded by the atmosphere medium around overarm then is meant, an end props up admittedly, and the membrane structure that an end is unsettled is thermal reactor and INFRARED ABSORPTION district on the film, and wherein film also is a composite dielectric film.The advantage of this membrane structure is since around be the very poor atmosphere medium (as air) of heat conductivility, so heat dissipation is little, the thermal resistance height, good heat-insulation effect, the heat of Xi Shouing can be along the direction of film simultaneously, just the right direction of thermocouple is effectively conducted, and is so conversion efficiency of thermoelectric is better, highly sensitive.Its shortcoming is to have only between film and body by solid Zhi Yiduan and links to each other, and the other end is unsettled, so is subjected to stress influence remarkable, and film warpage takes place easily or breaks in the manufacture process, so rate of finished products is lower.Two kinds of membrane structures as shown in Figure 1 and Figure 2.These membrane structures all utilize each diversity corrosion of silicon to obtain, and etch pit is pyramid, and sidewall is slow erosional surface (111).
Summary of the invention
The object of the invention is to propose a kind of new micromechanical thermoelectric pile infrared detector array with inclined drawn suspension beam support membrane structure and manufacture method, with the further thermal reactor structure of improving, improves the performance of detector.
The new thermoelectric pile infrared detector array that the present invention proposes, its support membrane and framework are miter angle, so be referred to as tiltedly to draw overarm, are surrounded by the atmosphere medium on every side, and an end props up admittedly, and the other end links to each other (as shown in Figure 3) with 2 of matrixes.On the overarm dielectric film thermal reactor structure, INFRARED ABSORPTION district and thermal reactor district are arranged.Structure according to the single-element detector etch pit can be divided into it discrete type and single two kinds of passes that corrode.The former is an etch pit structure independently, is separated by by silicon substrate between the etch pit; The latter is a shared etch pit structure; Separate by etch pit between overarm.No matter all available m * n of any inclined-pulling type overarm support membrane structure micro-mechanical thermoelectric pile infrared detector array represents that m, n are any natural number in theory, as m=1, n=4, then is alignment, and m, n are the face battle array greater than 1 all.The output of the array of detector can be adopted multiple mode according to actual needs, and as parallel connection output, the output of single-element detector one end is drawn by a common pin, and another output is exported by discrete pin.
The manufacture process of the micro-mechanical thermopile infrared detection array of the inclined drawn suspension beam support membrane structure that the present invention proposes is (seeing also Fig. 4).
(1) at first, method with low-pressure chemical vapor deposition (LPCVD) deposits one deck silicon nitride layer 8 on (100) crystal orientation monocrystalline silicon piece 7, thickness is that 100 nanometers are to 150 nanometers, deposit cryogenic oxidation silicon (LTO) layer 9 then, thickness is that 200 nanometers are to 300 nanometers, use low pressure chemical gas phase process deposit spathic silicon layer 10 again, thickness be 500 nanometers to 800 nanometers, the method for injecting with ion is carried out boron and is mixed then;
(2) on the silicon layer after the doping, make the shape that is used to form the thermocouple silicon strip by lithography, wherein the thermocouple silicon strip with cut edge into miter angle, obtain required polysilicon strip 10 with plasma etching method, bar is wide to be ten to tens microns, long is wide several times to tens times of bar;
(3) polysilicon strip 10 is carried out oxidation, constitute mixed oxidization silicon layer 9 with the low-temperature oxidation silicon layer, and then with low pressure chemical deposition one deck silicon nitride layer 8.The lithography fair lead figure is a mask with the photoresist, removes silicon nitride 8 with plasma etching method, erodes silica 9 with hydrofluoric acid, exposes at fairlead 13 places to be used to form the right polysilicon strip of thermocouple 10;
(4) at whole surface deposition metal level 11; Make the bonding jumper shape that is used to form thermocouple by lithography, bonding jumper 11 and the polysilicon strip 10 that mixes are realized ohmic contact by fairlead 13, and it is right to form thermocouple, becomes the main composition of thermal reactor 4; Photoetching is used to form the figure of inclined drawn suspension beam support membrane structure, utilize silicon nitride and silica composite dielectric film as mask, directly use anisotropic etchant, as tetramethyl aqua ammonia (TMAH) and potassium hydroxide (KOH) corrosion body silicon, utilize the difference of each crystal orientation corrosion rate of silicon, from the silicon corrosion that faces down, obtain inclined drawn suspension beam support membrane structure; Form the infrared radiation uptake zone again, area improves absorption efficiency from 100 microns * 100 microns to 1000 microns * 1000 microns by the deposition black matrix; Obtain the micromechanical heat stack detector array of new inclined drawn suspension beam support membrane structure thus.
This shows that the advantage of the support membrane that the present invention proposes is to combine the advantage of closing membrane and suspension beam structure.Because non-solid Zhi Duanyu matrix also has link to each other at 2, therefore has the closing membrane Stability Analysis of Structures, in the manufacturing process membrane structure be difficult for destroyed, the advantage that rate of finished products is high; And these only 2 link to each other, very little for the influence of heat conduction, thereby acted on the advantage of suspension beam structure, heat dissipation is little, good heat-insulation effect, thermal resistance height, therefore heat can improve the conversion efficiency of thermoelectric of detector along thermocouple to doing effective conduction, obtains high sensitivity.In sum, adopt this new inclined drawn suspension beam support membrane structure, can make the overall performance of micromachined thermopile infrared detector obtain bigger raising.
Description of drawings
Fig. 1 is the micromachined thermopile infrared detector schematic diagram with closing membrane structure.Via each diversity corrosive agent, after tetramethyl aqua ammonia (TMAH) back potassium hydroxide (KOH) corrosion, stay the very thin composite dielectric film of one deck 6 at the top of silicon substrate 1, sidewall is (111).This tunic is generally silicon nitride and silica composite membrane, links to each other one by one between film and matrix, and the centre does not have hole.Thermal reactor structure 4 is arranged above the film, and INFRARED ABSORPTION district 5, wherein the thermojunction district 3 of thermal reactor is positioned near the INFRARED ABSORPTION district 5, and cold junction district 2 is on silicon substrate.
Fig. 2 is the schematic diagram with micromachined thermopile infrared detector of suspension beam structure.The anisotropic corrosion has also been passed through in the formation of overarm, and sidewall is (111), and the overarm membrane structure also is silicon nitride and silica composite dielectric film.The end of hanging oneself from a beam links to each other with silicon substrate 1, and the other end is unsettled, has hole to be separated by between overarm and matrix.Thermal reactor structure 4 and INFRARED ABSORPTION district 5 are arranged in the overarm.With the closing membrane similar, thermojunction district 3 is near INFRARED ABSORPTION district 5, and cold junction district 2 is on silicon substrate 1.
Fig. 3 is the schematic diagram of inclined drawn suspension beam support membrane structure micromachined thermopile infrared detector.After the corrosion of each diversity corrosive agent, stay sidewall and tiltedly draw suspension beam structure for (111) slow erosional surface.Wherein overarm and 1 one-tenth miter angle of silicon substrate.So name is tiltedly drawn.The end of hanging oneself from a beam props up admittedly, links to each other with silicon substrate 1, and an other end only has link to each other with matrix 1 at 2.INFRARED ABSORPTION district 5 and thermal reactor structure 4 are in this overarm.After INFRARED ABSORPTION district 5 absorbed infrared radiation, temperature raise, and constituted the thermojunction district 3 of thermal reactor, and the thermal conductivity of silicon is good, is called the cold junction district 2 of thermal reactor, keeps the temperature identical with surrounding environment.
Fig. 4 is the inclined drawn suspension beam support membrane structure schematic diagram of fabrication technology.On a slice monocrystalline silicon 7, first low-pressure chemical vapor deposition silicon nitride layer 8 behind the top again deposition cryogenic oxidation silicon 9, is used low-pressure chemical vapor deposition method deposit spathic silicon layer 10 again, and ion implantation doping makes it to have certain resistivity.Photoetching polysilicon strip figure forms polysilicon strip with plasma etching method.After polysilicon strip carried out oxidation, deposit one deck silicon nitride 8 again, so far formed the composite dielectric film of silicon nitride and silica.The lithography fair lead figure removes silicon nitride with plasma etching method, removes silica with the hydrofluoric acid corrosion, obtains fairlead 13, the polysilicon strip that exposure place is mixed.Evaporation layer of metal 11, photoetching metal wire figure, corrosion obtains required bonding jumper, by fairlead 13 and the prior ohmic contact of polysilicon strip, constitutes thermal reactor structure 4.After this, the photoetching corrosion structure graph, with silicon nitride, silica and metal row culture mask, utilize each phasic property corrosive agent corrosion removing body silicon of silicon, forming sidewall is (111) face, overarm becomes 45 degree pin with matrix, the centre has hole 14 to be separated by, and an end props up admittedly, and an other end is by 2 inclined drawn suspension beam support membrane structures that link to each other with matrix, and matrix 1 is made of monocrystalline silicon 7 and the composite membrane of silicon nitride layer 8 with silicon oxide layer 9, is called the cold junction district of thermal reactor.Deposit black matrix 12 afterwards, form the INFRARED ABSORPTION district, and constitute the thermojunction district of thermal reactor.So just obtained new inclined drawn suspension beam support membrane structure micromachined thermopile infrared detector.
Fig. 5 is the schematic diagram of 1 * 4 discrete type inclined drawn suspension beam support membrane structure micromachined thermopile infrared detector linear array.
Fig. 6 is the schematic diagram of 4 * 4 discrete type inclined drawn suspension beam support membrane structure micromachined thermopile infrared detector face battle arrays.
Fig. 7 is 1 * 4 single corrosion pass inclined drawn suspension beam support membrane structure micromachined thermopile infrared detector linear array schematic diagram.
Fig. 8 is the schematic diagram of 4 * 4 single corrosion pass inclined drawn suspension beam support membrane structure micromachined thermopile infrared detector face battle arrays.
The specific embodiment
Further specify substantive distinguishing features of the present invention and marked improvement below by embodiment, but the present invention Only limit to absolutely not embodiment.
Membrane structure micromechanics thermopile IR detector alignment (Fig. 5) is supported in embodiment 11 * 4 discrete type oblique pull overarms
This alignment supports membrane structure micromechanics thermopile IR detector by linear by 4 unit oblique pull overarms Rearrange. Oblique pull overarm and 14 one-tenth miter angles of etch pit have thermal reactor structure 4 on the overarm dielectric film, INFRARED ABSORPTION district 5 and thermojunction district 3; Single-element detector has independently etch pit structure, etch pit it Between be separated by by silicon substrate 1, become the cold junction district 2 of thermal reactor; The thermojunction district 3 of single-element detector is positioned at infrared Absorb near the district 5, cold junction district 2 is positioned at silicon substrate 1, the one silicon substrate frame conduct of adjacent two units shareds Public cold junction district; At this, having this kind single-element detector independently, the array of etch pit structure is called branch Vertical type array. The output of detector array can be taked various ways according to actual needs, illustrates among Fig. 5 Be the mode of output in parallel, namely connect an output by a common lead 15 between single-element detector, Draw common pin 16, the other output in unit is drawn by discrete pin 17. Structure connects according to this Arbitrary discrete pin 17 is exported with common pin 16 conducts, connects exactly the unit of this discrete pin 17 The output of detector.
Membrane structure micromechanics thermopile IR detector face battle array (Fig. 6) is supported in embodiment 24 * 4 discrete type oblique pull overarms
This face battle array is to support membrane structure micromechanics thermopile IR detector in 1 * 4 discrete type oblique pull overarm Form on the basis of alignment, formed by 16 unit. Similar to this alignment, single-element detector has Etch pit structure independently, oblique pull overarm and 14 one-tenth miter angles of etch pit have thermal reactor structure 4 in the overarm, INFRARED ABSORPTION district 5 and thermojunction district 3; Thermojunction district 3 is positioned near the INFRARED ABSORPTION district 5,2 in cold junction district In silicon substrate 1, share a silicon substrate frame as public cold junction district with adjacent two single-element detectors of delegation, Between the adjacent row then to be separated by with silicon substrate 1. What the way of output of this face battle array adopted also is parallel way, Such as Fig. 6 signal, by the output that common lead 15 connects with single-element detector in the delegation, draw Common pin 16, another output of single-element detector is drawn by discrete pin 17; Each adopts in parallel in the ranks Mode is exported, and the public output 16 of relative this row is respectively arranged, and another output of single-element detector Drawn by discrete pin 17.
Membrane structure micromechanics thermopile IR detector alignment (Fig. 7) is supported in embodiment 31 * 4 single corrosion pass oblique pull overarms
Different from embodiment 1, the maximum characteristics of this alignment are exactly that single-element detector shares an etch pit, By shown in Figure 7, so with its called after list etch pit profile battle array. Wherein overarm still with 1 one-tenth 45 of silicon substrate The degree angle, thermal reactor structure 4, INFRARED ABSORPTION district 5 and thermojunction district 3 all the overarm dielectric film on, cold junction Distinguishing 2 is public silicon substrate. Separated by etch pit 14 between overarm, middle Jie with the atmosphere medium, use With heat insulation. Connect an output by common lead 15 between single-element detector, drawn by common pin 16, Another output is then drawn by discrete pin 17; What adopt here also is the mode of output in parallel.
Membrane structure micromechanics thermopile IR detector face battle array (Fig. 8) is supported in embodiment 44 * 4 single corrosion pass oblique pull overarms
This face battle array is take embodiment 3 as fundamental construction, and wherein single-element detector shares a corrosion in every delegation The hole, but be separated by with silicon substrate between the adjacent row. Equally, with still 1 one-tenth 45 degree of silicon substrate of hanging oneself from a beam in the delegation The angle, thermal reactor structure 4, INFRARED ABSORPTION district 5 and thermojunction district 3 all the overarm dielectric film on, the cold junction district 2 is public silicon substrate. Also be separated by with etch pit 14 between overarm, play heat insulation by the atmosphere medium Effect. The way of output of every delegation is identical with embodiment 3, is connected by common lead 15 between single-element detector Connect an output, drawn by common pin 16, another output is then drawn by discrete pin 17; Different rows Draw corresponding its common pin 16, form the output of these unit with the discrete pin 17 of single-element detector End.
Claims (6)
1. the micromechanical thermoelectric pile infrared detector array of an inclined drawn suspension beam support membrane structure comprises the overarm support membrane, it is characterized in that support membrane and framework are miter angle, are surrounded by the atmosphere medium on every side; One end is fixed, and the other end links to each other with 2 of matrixes.
2. by the micromechanical thermoelectric pile infrared detector array of the described inclined drawn suspension beam support membrane structure of claim 1, thermal reactor structure, INFRARED ABSORPTION district and thermojunction district are arranged on the dielectric film that it is characterized in that hanging oneself from a beam.
3. by the micromechanical thermoelectric pile infrared detector array of the described inclined drawn suspension beam support membrane structure of claim 1, it is characterized in that structure according to the single-element detector etch pit can be divided into two kinds of discrete type and single etch pits.
4. by the micromechanical thermoelectric pile infrared detector array of claim 1 or 3 described inclined drawn suspension beam support membrane structures, it is characterized in that discrete type inclined drawn suspension beam support membrane structure is an etch pit structure independently, is separated by by silicon substrate between the etch pit; Single corrosion pass inclined-pulling type overarm supporting construction is a shared etch pit structure, is separated by etch pit between the overarm.
5. press the micromechanical thermoelectric pile infrared detector array of the described inclined drawn suspension beam support membrane structure of claim 1, multiple mode is taked in the output that it is characterized in that detector array according to actual needs, as parallel connection output, end output is drawn by common pin, and another output is exported by discrete pin.
6. press the manufacture method of the micromechanical thermoelectric pile infrared detector array of the described inclined drawn suspension beam support membrane structure of claim 1, it is characterized in that:
(1) at first, method with low-pressure chemical vapor deposition deposits one deck silicon nitride layer on (100) crystal orientation monocrystalline silicon piece 7, thickness is that 100 nanometers are to 150 nanometers, deposit the low-temperature oxidation silicon layer then, thickness is that 200 nanometers are to 300 nanometers, use low pressure chemical gas phase process deposit spathic silicon layer again, thickness be 500 nanometers to 800 nanometers, the method for injecting with ion is carried out boron and is mixed then;
(2) on the silicon layer after the doping, make the shape that is used to form the thermocouple silicon strip by lithography, wherein the thermocouple silicon strip with cut edge into miter angle, obtain required polysilicon strip with plasma etching method, bar is wide to be ten to tens microns, long is wide several times to tens times of bar;
(3) polysilicon strip is carried out oxidation, constitute the mixed oxidization silicon layer with the low-temperature oxidation silicon layer, and then with low pressure chemical deposition one deck silicon nitride layer.The lithography fair lead figure is a mask with the photoresist, removes silicon nitride with plasma etching method, erodes silica with hydrofluoric acid, exposes at the fairlead place to be used to form the right polysilicon strip of thermocouple;
(4) at whole surface deposition metal level; Make the bonding jumper shape that is used to form thermocouple by lithography, the polysilicon strip of bonding jumper and doping is realized ohmic contact by fairlead, and it is right to form thermocouple, becomes the main composition of thermal reactor; Photoetching is used to form the figure of inclined drawn suspension beam support membrane structure, utilize silicon nitride and silica composite dielectric film as mask, directly use anisotropic etchant, as tetramethyl aqua ammonia and potassium hydroxide corrosion body silicon, utilize the difference of each crystal orientation corrosion rate of silicon, from the silicon corrosion that faces down, obtain inclined drawn suspension beam support membrane structure; Form the infrared radiation uptake zone again, area improves absorption efficiency from 100 microns * 100 microns to 1000 microns * 1000 microns by the deposition black matrix; Obtain the micromechanical heat stack detector array of new inclined drawn suspension beam support membrane structure thus.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100423310C (en) * | 2006-04-29 | 2008-10-01 | 中国科学院上海微***与信息技术研究所 | Micromechanical thermalelectric-stack infrared detector compatible with co-complementive metal oxide semiconductor technology and preparing method |
| CN100491971C (en) * | 2006-06-07 | 2009-05-27 | 中国科学院上海微***与信息技术研究所 | Micro integrated grating spectrograph based on blazed grating and thermopile detector and method for making same |
| CN100562725C (en) * | 2003-09-29 | 2009-11-25 | 中国科学院上海微***与信息技术研究所 | Micromachined thermopile infrared detector and manufacture method thereof |
| CN102798474A (en) * | 2012-08-23 | 2012-11-28 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| CN104215338A (en) * | 2014-09-01 | 2014-12-17 | 电子科技大学 | Greenhouse detector integrating piezoelectric and pyroelectric characteristics and preparation method of greenhouse detector |
| CN106404708A (en) * | 2016-10-28 | 2017-02-15 | 成都市亿泰科技有限公司 | Drug abuse microsensor based on infrared spectroscopy |
| CN111486973A (en) * | 2020-03-30 | 2020-08-04 | 成都众芯科技有限公司 | Full-flexible pyroelectric infrared detector |
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- 2001-08-03 CN CNB011264012A patent/CN1168149C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100562725C (en) * | 2003-09-29 | 2009-11-25 | 中国科学院上海微***与信息技术研究所 | Micromachined thermopile infrared detector and manufacture method thereof |
| CN100423310C (en) * | 2006-04-29 | 2008-10-01 | 中国科学院上海微***与信息技术研究所 | Micromechanical thermalelectric-stack infrared detector compatible with co-complementive metal oxide semiconductor technology and preparing method |
| CN100491971C (en) * | 2006-06-07 | 2009-05-27 | 中国科学院上海微***与信息技术研究所 | Micro integrated grating spectrograph based on blazed grating and thermopile detector and method for making same |
| CN102798474A (en) * | 2012-08-23 | 2012-11-28 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| CN104215338A (en) * | 2014-09-01 | 2014-12-17 | 电子科技大学 | Greenhouse detector integrating piezoelectric and pyroelectric characteristics and preparation method of greenhouse detector |
| CN104215338B (en) * | 2014-09-01 | 2017-06-30 | 电子科技大学 | A kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic and preparation method thereof |
| CN106404708A (en) * | 2016-10-28 | 2017-02-15 | 成都市亿泰科技有限公司 | Drug abuse microsensor based on infrared spectroscopy |
| CN111486973A (en) * | 2020-03-30 | 2020-08-04 | 成都众芯科技有限公司 | Full-flexible pyroelectric infrared detector |
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