CN103985814A - Double-layer piezoelectric film cantilever beam sensor structure and manufacturing method thereof - Google Patents
Double-layer piezoelectric film cantilever beam sensor structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN103985814A CN103985814A CN201410200445.4A CN201410200445A CN103985814A CN 103985814 A CN103985814 A CN 103985814A CN 201410200445 A CN201410200445 A CN 201410200445A CN 103985814 A CN103985814 A CN 103985814A
- Authority
- CN
- China
- Prior art keywords
- cantilever beam
- double
- piezoelectric film
- semiconductor substrate
- sacrifice layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a double-layer piezoelectric film cantilever beam sensor structure and a manufacturing method of the piezoelectric film cantilever beam sensor structure. The piezoelectric film cantilever beam sensor structure comprises a semiconductor substrate with double polished faces, a cavity, a cantilever beam supporting structure, a double-layer piezoelectric film cantilever beam structure and a release blocking structure, wherein the cavity is located in the front face of the semiconductor substrate and namely a sacrificial layer cavity; the fixed end of the cantilever beam supporting structure is located on the front face of the semiconductor substrate, and the movable end of the cantilever beam supporting structure stretches towards the interior of the sacrificial layer cavity; the double-layer piezoelectric film cantilever beam structure is located above a cantilever beam supporting layer; the release blocking structure wraps the cantilever beam structure. In the manufacturing process of the double-layer cantilever beam sensor structure, the surface sacrificial layer technology is adopted, the piezoelectric cantilever beam structure is released from the front face of the semiconductor substrate, the technology is fully compatible with a standard silicon integrated circuit technology, the technology is simple and controlled, the problem that pollution is generated when a cantilever beam is released from the back of the substrate through wet etching in the body silicon technology is solved, and the yield is increased. By increasing the deformation amplitude of a double-layer piezoelectric film, sensitivity of the piezoelectric effect is enhanced, and response and signal output of the cantilever beam to external excitation are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, especially relate to a kind of double-deck piezoelectric film cantilever beam sensor construction and manufacture method thereof
Background technology
Along with developing rapidly of semiconductor technology, the application that integrated circuit is combined with micro-electromechanical system (MEMS) is a dark horse, and becomes a kind of brand-new technology application.MEMS must consider the immixture of multiple physical field simultaneously, and with respect to traditional machinery, their size is less, and maximum is no more than one centimetre, is even only several microns, and its thickness is just more small.The products such as the microsensor made by MEMS, microactrator, micro parts, Micromechanical Optics device, the micro-electric integrated circuit of vacuum have very wide application prospect in a lot of fields.
The integrated microdevice system that complete MEMS is made up of parts such as microsensor, microactrator, signal processing and control circuit, communication interface and power supplys.Its target be information obtain, process and execution integrates, composition has multi-functional microsystem, is integrated in large scale system, thereby improves significantly automation, intellectuality and the reliability level of system.
Piezoelectric principle is to realize a kind of new way of microsensor.Based on the transducer of piezoelectric effect.A kind of self-power generation type and data-collection formula transducer.Its micro-structural is made up of piezoelectric.After piezoelectric is stressed, produce electric charge on surface.This electric charge just becomes the electric weight output that is proportional to suffered external force after charge amplifier and measuring circuit are amplified and be transformed into impedance.Piezoelectric transducer is for the conversion of the non-electric physical quantitys such as ergometry and energy.Its advantage is bandwidth, highly sensitive, signal to noise ratio is high, simple in structure, reliable operation and lightweight etc.
At present, multiple research institutions have all carried out the research to Piezoelectric Thin Film Microsensor technology in the world, aspect the theory analysis of principle, the properity etc. of piezoelectric membrane micro element, obtaining certain achievement, but the Piezoelectric Thin Film Microsensor that really can apply is in practice little, its key issue: the one, the compatibility issue of the Micrometer-Nanometer Processing Technology of piezoelectric membrane and piezoelectric membrane and silicon integrated circuit technique is not yet well solved; The 2nd, most piezoelectric transducer adopts bulk silicon technological, the release of micro-structural need adopt silicon substrate back side etching process, and this kind of complex process is difficult to control, incompatible with the integrated circuit technology generally adopting at present, and easily there is the problem of micro-structural and substrate adhesion, cause rate of finished products to reduce; The 3rd, most piezoelectric transducer is for ease of processing, employing be the structure of single piezoelectric membrane, limited the sensitivity of transducer or the amplitude of deformation of actuator, reduced the response of cantilever beam to external drive and the output of signal.
For this reason, need a kind of new double-deck piezoelectric film cantilever beam sensor construction and manufacture method thereof, can with the ic process compatibility generally adopting at present, be difficult for occurring micro-structural-cantilever beam and substrate adhesion, improve rate of finished products, improve the output of sensitivity and the response to external drive and signal.
Summary of the invention
The problem that the present invention solves is to provide a kind of double-deck piezoelectric film cantilever beam sensor construction and manufacture method thereof, can improve the output of sensitivity and the response to external drive and signal, and fully compatible with the integrated circuit technology generally adopting at present, avoid occurring micro-structural-cantilever beam and substrate adhesion, improve rate of finished products.
For addressing the above problem, the invention provides a kind of double-deck piezoelectric film cantilever beam sensor construction and comprise:
Be arranged in the sacrifice layer chamber of described Semiconductor substrate;
Cantilever beam supporting construction, a stiff end is positioned at outside described sacrifice layer chamber, and another movable end is inner extension to sacrifice layer chamber, and terminates in sacrifice layer chamber;
Be positioned at the cantilever beam structure of described cantilever beam supporting construction top;
The release barrier structure of parcel cantilever beam structure periphery;
It is characterized in that, there is the opening that is positioned at described Semiconductor substrate front in described sacrifice layer chamber.
Optionally, described cantilever beam supporting construction is made up of polysilicon film, and thickness is 1～2 micron.
Optionally, described cantilever beam structure is made up of two-layer piezoelectric membrane and three electrodes.
Optionally, described piezoelectric membrane adopts lead zirconate titanate PZT material, and thickness is 0.5 micron～5 microns.
Optionally, described electrode, by double-layer metal film, is particularly made up of metal platinum Pt and Titanium Ti.
Optionally, the thickness of metal platinum Pt is 0.01 micron～0.1 micron.
Optionally, the thickness of Titanium Ti is 0.01～0.05 micron.
Optionally, described piezoelectric membrane and electrode are arranged under the overlay mutually.
Optionally, described release barrier structure is that thickness is 0.05 micron～0.1 micron at cantilever beam structure periphery parcel one deck silicon nitride film.
For addressing the above problem, the present invention also provides a kind of manufacture method of double-deck piezoelectric film cantilever beam sensor construction, and step comprises:
The Semiconductor substrate of twin polishing is provided;
On described Semiconductor substrate front, form cavity;
In described cavity, form and fill and completely sacrifice tunic, form sacrifice layer chamber;
Form cantilever beam supporting layer in described substrate face;
Above described supporting layer, form bottom electrode;
Above described bottom electrode, form laminated conductive film;
Electrode in forming above described laminated conductive film;
Above the electrode of described intermediate layer, form upper strata piezoelectric membrane;
Above the piezoelectric membrane of described upper strata, form top electrode;
In described Semiconductor substrate, form cantilever beam supporting construction;
Form and discharge barrier structure at described semiconductor substrate surface, parcel is positioned at the described cantilever beam structure of described piezoelectric film cantilever beam supporting construction top;
Form sacrifice layer on surface, described sacrifice layer chamber and discharge window;
Remove and sacrifice tunic, discharge cantilever beam structure.
Compared with prior art, technical scheme of the present invention has the following advantages:
A kind of double-deck piezoelectric film cantilever beam sensor construction is provided in technical scheme of the present invention, described double-deck piezoelectric film cantilever beam sensor construction comprises the sacrifice layer chamber that is positioned at described Semiconductor substrate and is opened on substrate face, one stiff end is positioned at outside described sacrifice layer chamber, the cantilever beam supporting construction of another movable end inner polycrystalline silicon material extending to sacrifice layer chamber, be positioned at the cantilever beam structure being formed by piezoelectric membrane and electrode of described cantilever beam supporting construction top, and cover the silicon nitride release barrier layer of whole overarm arm configuration.
In the present invention, sacrifice layer chamber is opened on Semiconductor substrate front, and its advantage is: when on the one hand having met cantilever beam, under piezoelectric principle effect, deformation occurring, when movable end is subjected to displacement, have the space of enough movement or stretching, extension; On the other hand, front openings makes described cantilever beam sensor structure all form or build the front at substrate, and this is similar to standard integrated circuit, and therefore the manufacture of cantilever beam sensor structure just can be used for reference and the standard flat technique of compatible integrated circuit completes.
Cantilever beam sensor structure of the present invention adopts the stack of double-deck piezoelectric membrane as the micro-structural of transducer.This structure is compared with the transducer of individual layer piezoelectric membrane, can increase amplitude of deformation.Upper surface, centre, lower surface at described double-deck piezoelectric membrane are connected with respectively electrode, can also increase like this collection density and the quantity of signal, thereby reach enhancing transducer sensitivity, improve the beneficial effect of the precision of signal.
The cantilever beam supporting construction that the orlop of double-deck piezoelectric film cantilever beam sensor construction of the present invention has polysilicon film to form.Polysilicon is widely used in integrated circuit technology, and growing polycrystalline silicon is very convenient in integrated circuit technology, uses polysilicon film to improve the compatibility of cantilever beam sensor manufacture and integrated circuit technology as overarm arm support structure.Owing to using polysilicon to support, cantilever beam structure can extend and be unsettled inner and can not subside and touch substrate in sacrifice layer chamber, avoids causing the adhesion with substrate.
Double-deck piezoelectric film cantilever beam sensor construction outer surface of the present invention is enclosed with the release barrier structure of silicon nitride.Because the sacrifice layer release approach of double-deck piezoelectric film cantilever beam transducer of the present invention is different from the approach that existing bulk silicon technological discharges, to discharge outside substrate from the sacrifice layer chamber of substrate face opening, therefore not only need to prevent the adhesion of micro-structural and substrate, the energy being sprung up in addition to substrate by sacrifice layer chamber while also needing to prevent from discharging is outwards pushed suspension arm open cause fracture or other irreversible deformation.Just can strengthen the intensity of cantilever beam by cantilever beam structure being superscribed to the release barrier structure of one deck silicon nitride, reduce the risk that fractures, improve rate of finished products.Same, because silicon nitride is the typical media film in integrated circuit technology, select silicon nitride also to improve the compatibility of the present invention and integrated circuit technology as release barrier structure.
Brief description of the drawings
Fig. 1 to Figure 22 is cross-sectional view corresponding to the double-deck piezoelectric film cantilever beam each step of sensor construction manufacture method of the present invention;
Figure 23 is the vertical view of the double-deck piezoelectric film cantilever beam sensor construction of the present invention.
Embodiment
Conventionally piezoelectric transducer manufacture adopts bulk silicon technological, the release of micro-structural need be corroded by the silicon substrate back side, complex process is difficult to be controlled, incompatible with the integrated circuit technology of current standard, need to add special equipment and special chemical reagent corrodes, and easily there is the problem of micro-structural and substrate adhesion, cause rate of finished products low.
For this reason, the invention provides a kind of double-deck piezoelectric film cantilever beam sensor construction and manufacture method.Described double-deck piezoelectric film cantilever beam sensor construction has the sacrifice layer chamber that is arranged in described Semiconductor substrate, one stiff end is positioned at outside described sacrifice layer chamber, another movable end is inner cantilever beam supporting construction of extending to sacrifice layer chamber, what be positioned at described cantilever beam supporting construction top forms cantilever beam structure by two-layer piezoelectric membrane and three electrodes, whole cantilever beam structure is released barrier layer parcel, and described sacrifice layer chamber is opened on the front of described Semiconductor substrate.Because sacrifice layer chamber is opened on Semiconductor substrate front, when on the one hand having met cantilever beam, under piezoelectric principle effect, deformation having occurred, it is the space that movable end is subjected to displacement needed movement, on the other hand, front openings makes the manufacture of described cantilever beam sensor structure can adopt the planar technique of the integrated circuit of standard.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiments of the invention are elaborated.
Please refer to Fig. 1, show in the embodiment of the present invention, the Semiconductor substrate 100 that the substrate of the double-deck piezoelectric film cantilever beam sensor construction providing is twin polishing.
In the present embodiment, the material of Semiconductor substrate 100 can be N-type substrate, P type substrate, and crystal orientation and resistivity to substrate does not also limit.The selection of Semiconductor substrate 100 can be according to determining with the needs of the integrated semiconductor device of double-deck piezoelectric film cantilever beam sensor construction.The present embodiment is with P type doping common in integrated circuit, and crystal orientation is 100, and the silicon substrate of resistivity 8～12 ohmcms is example.
Fig. 2 to Fig. 4, shows the formation in sacrifice layer chamber in the embodiment of the present invention.Adopt photoetching method, by mask plate, the figure in the sacrifice layer chamber of definition is transferred to Semiconductor substrate front, then form sacrifice layer chamber 110 by reactive ion etching in semiconductor front by dry etch process.Owing to adopting reactive ion etching to form sacrifice layer chamber, thereby the bulk silicon technological of having broken away from prior art is selected this limitation because the restriction in corrosion crystal orientation has limited substrate, make design more convenient, secondly by regulating etching program just can meet the diversity of sacrifice layer chamber figure and cavity depth, the substrate that etching formation sacrifice layer chamber consumes again, far fewer than the bulk silicon technological of prior art, can be realized better device support.
The present embodiment uses low-pressure chemical vapor phase deposition SACVD method to sacrifice tunic 120 deposits, makes to sacrifice tunic 120 and fills full sacrifice layer chamber 110 completely.The material of sacrificing tunic adopts the silicon oxide film of good fluidity.In the present embodiment, adopt boro-phosphorus glass BPSG.The present invention also can adopt: boron glass BSG, the conventional silicon oxide film in the integrated circuit technologies such as phosphorus glass PSG and rotary coating glass SOG is as sacrificing tunic.
After deposit, carry out planarization backflow, be deposited on the difference in height of sacrificing tunic in substrate surface and sacrifice layer chamber to slow down.In Fig. 3, show the formation state of sacrificing tunic 120 in the embodiment of the present invention after backflow.Reflux and carry out in boiler tube, temperature is between 850 DEG C～900 DEG C, and the time is 60 minutes～120 minutes.In Fig. 4, illustrate that in the embodiment of the present invention, sacrifice tunic 120 carries out the result of planarization etching after planarization refluxes: remove the sacrifice tunic 120 on substrate 100 surfaces, retain the sacrifice tunic 120 in sacrifice layer chamber.Planarization etching is isotropic dry etching.Etching result makes the top of the sacrifice tunic 120 in sacrifice layer chamber 110 and Semiconductor substrate 100 horizontal plane that exists together.This growth for electrode subsequently and piezoelectric membrane is most important.
Please refer to Fig. 5, show the embodiment of the present invention by depositing polysilicon film 210, form cantilever beam supporting layer.The thickness of polysilicon film 120 is 1 micron～2 microns.Polysilicon film in the present embodiment, adopts the non-doped polycrystalline in integrated circuit technology, is made up of low temperature deposition technique, and deposition temperature is between 600oC to 620oC.Polysilicon film of the present invention can be also the low-resistance polycrystalline of phosphine doping or injection, or the semiconductor device needed polysilicon integrated with double-deck piezoelectric film cantilever beam sensor construction.
Fig. 6 to Fig. 8, shows the formation of embodiment of the present invention bottom electrode.
The present embodiment adopts the direct stripping technology of photoresist to form electrode.It should be noted that, the upper, middle and lower electrode pattern of the present embodiment is identical, adopts same mask version, i.e. electrode mask plate.Use electrode mask plate, through coating photoresist 300a, expose, be developed in and form bottom electrode figure on polysilicon film supporting layer 210: retain photoresist 300a in the region that need to peel off bottom electrode, need to form bottom electrode region and remove photoresist.After the planarization backflow of front road and planarization etching technics, there is not height relief drop in substrate surface, and the photoresist that therefore bottom electrode photoresist stripping process need to be coated with is thinner, and preferred, thickness is 1 micron.Described in the present embodiment, electrode is flagpole pattern, and a stiff end is positioned at periphery, sacrifice layer chamber, and another movable end extends into and termination and inside, sacrifice layer chamber.
Fig. 7 shows the embodiment of the present invention and adopts physical vapor deposition PVD method depositing metal film as bottom electrode.The metal film of deposit covers whole substrate.It should be noted that, the upper, middle and lower electrode of the present embodiment forms by double-layer metal film, is respectively metal platinum Pt and Titanium Ti.The thickness of metal platinum Pt is 0.01 micron～0.1 micron, and the thickness that the present invention selects is 0.05 micron.The thickness of Titanium Ti is 0.01～0.05 micron, and the thickness that the present invention selects is 0.02 micron.
Subsequently, whole substrate is immersed in acetone soln and carries out photoresist lift off, the metal being deposited on photoresist is removed with peeling off of photoresist, does not have the metal of photoresist overlay area to remain, and forms bottom electrode 220a, as shown in Figure 8.
Fig. 9 to Figure 10, shows the formation of embodiment of the present invention laminated conductive film.
Piezoelectric membrane of the present invention is lead zirconate titanate PZT material, adopts sol-gel process to prepare piezoelectric membrane.Lead zirconate titanate PZT film covers whole substrate, and thickness is 2 microns.The thickness of lead zirconate titanate PZT film is relevant to the design size of piezoelectric membrane, and thickness range is between 0.5 micron～5 microns.
Carry out gluing, exposure, development by mask plate at lead zirconate titanate PZT film, and carry out dry etching formation laminated conductive film 230a.The two-layer piezoelectric membrane figure of the present embodiment is identical, adopts same mask version, i.e. piezoelectric membrane mask plate.Piezoelectric membrane figure is more than or equal to electrode pattern, is also flagpole pattern: a stiff end is positioned at periphery, sacrifice layer chamber, and another movable end extends into and termination and inside, sacrifice layer chamber.The present embodiment laminated conductive film 230a and bottom electrode 220a superpose up and down, and laminated conductive film 230a covers bottom electrode 220a completely.
The present embodiment adopts reactive ion etching to carry out graphically, and reacting gas is the mist of sulphur hexafluoride SF6, chlorine Cl2, argon Ar and oxygen O2.
It should be noted that the present invention can also prepare piezoelectric membrane by additive methods such as sputtering method, metallo-organic compound thermal decomposition method, Metalorganic Chemical Vapor Deposition and pulsed laser depositions.
Figure 11 to Figure 13, shows the formation of electrode in the embodiment of the present invention.
Form middle electrode pattern with the direct stripping technology of the identical employing photoresist of step of Fig. 6 to Fig. 8, by electrode mask plate coating photoresist 300b, and by exposure, development, electrode pattern in forming on laminated conductive film 230a.It should be noted that, must be greater than the summation of bottom electrode 220a and laminated conductive film 230a thickness for the photoresist thickness of electrode coating, all sheltered by photoresist 300b with the cross section, two terminations that ensures bottom electrode 220a and laminated conductive film 230a figure, avoid cross section, termination because of be deposited with metal cause bottom electrode and in interelectrode short circuit.In the present embodiment, the coating thickness of photoresist 300b is 3.5～4 microns.
Repeated using physical vapor deposition PVD method deposit double-layer metal film, metal platinum Pt thickness is 0.05 micron, the thickness of Titanium Ti is 0.02 micron.Subsequently whole substrate is immersed in acetone soln and carries out photoresist lift off, the metal being deposited on photoresist is removed with peeling off of photoresist, and the metal staying on laminated conductive film 230a figure forms middle electrode pattern 220b, as shown in figure 13.
Figure 14 to Figure 15, reuses sol-gel process and prepares lead zirconate titanate PZT film, covers whole substrate.Film thickness is 2 microns.Adopt piezoelectric membrane mask plate to carry out gluing, exposure, development to lead zirconate titanate PZT film, then dry etch process, and go photoresist graphically to form upper strata piezoelectric membrane 220b.The present embodiment upper strata piezoelectric membrane 220b and middle electrode 220b superpose up and down, electrode 220b during upper strata piezoelectric membrane 220b covers completely.The present invention can adopt the additive methods such as sputtering method, metallo-organic compound thermal decomposition method, Metalorganic Chemical Vapor Deposition and pulsed laser deposition to prepare lead zirconate titanate PZT as piezoelectric membrane equally.
Figure 16 to Figure 18, identical with the formation of bottom electrode and middle electrode, the embodiment of the present invention adopts the direct stripping technology of photoresist on the piezoelectric membrane of upper strata, to form top electrode figure.It should be noted that, in the present embodiment, the thickness of the photoresist 300c being coated with for top electrode is 5.5～6 microns, under being greater than, middle electrode, and the summation of double-deck piezoelectric membrane thickness, with under ensureing, the cross section, two terminations of middle electrode sheltered by photoresist 300c, thereby avoid that metal is deposited to down, cause in the cross section, termination of middle electrode under, short circuit between middle electrode.
Continue repeated using physical vapor deposition PVD method depositing metal film as top electrode.Upper electrode film is double-layer metal film, and metal platinum Pt thickness is 0.05 micron, and the thickness of Titanium Ti is 0.02 micron.Subsequently whole substrate is immersed in acetone soln and carries out photoresist lift off, the metal being deposited on photoresist is removed with peeling off of photoresist, and the metal staying on the piezoelectric membrane 230ba figure of upper strata forms top electrode figure 220c, as shown in figure 18.
Complete after above-mentioned steps, the present invention has completed intersecting and stacking one by one between 3 layers of electrode 220 above polysilicon film supporting layer 210 and double-deck piezoelectric membrane 230, concrete mode is, on, in, lower three electrodes are placed in respectively upper strata piezoelectric membrane upper surface, the centre of two-layer piezoelectric membrane, and laminated conductive film lower surface.All figure one stiff ends are outside sacrifice layer chamber, and another movable end extends and terminates in inside, sacrifice layer chamber, forms cantilever beam structure.
Please refer to Figure 19, form cantilever beam supporting construction.
Use mask plate, by the mist of sulphur hexafluoride SF6, chlorine Cl2, hydrogen bromide HBr, adopt reactive ion etching to carry out graphically, remove with the polysilicon film of exterior domain being exposed to piezoelectric membrane and electrode pattern, only stay by piezoelectric membrane and electrode pattern cover and with the polysilicon film of substrate contact part, as cantilever beam supporting structure.
Please refer to Figure 20, form and discharge barrier structure.
Adopt the method for plasma-reinforced chemical vapor deposition PECVD at substrate surface deposit one deck silicon nitride Si
3n
4, as the barrier layer 240 that discharges cantilever beam structure.Silicon nitride covers whole substrate, and the outer surface layer of parcel overarm arm configuration.Silicon nitride thickness is 0.05 micron～0.1 micron.The present embodiment adopts surface sacrificial process, and unlike the prior art, release approach is led to outside substrate by the sacrifice layer chamber opening of substrate face.Thrust beyond sacrifice layer can form from sacrifice layer chamber to substrate while release, need to prevent that this energy from outwards pushing cantilever beam structure open cause fracture or other irreversible deformation.Silicon nitride can completely cut off oxygen and the impact of moisture on cantilever beam structure in air simultaneously, prevents that metal electrode is oxidized or corrodes.
Please refer to Figure 21, form cantilever beam structure and discharge window.
Form cantilever beam structure by mask plate and discharge window 250.With the mist of sulphur hexafluoride SF6, oxygen O2, adopt reactive ion etching silicon nitride, remove the silicon nitride of cantilever beam structure release window 250 positions.Described release window 250 comprises all sacrifice layers chamber 110 interior zones except cantilever beam structure overlay area.Because the mist of sulphur hexafluoride SF6, oxygen O2 is greater than 20:1 to the etching selection ratio of silicon nitride and silica, so etching can self-stopping technology and the top of sacrificing tunic 120.
Figure 22, removes sacrifice layer, discharges cantilever beam structure.
Adopt isotropism wet corrosion technique to remove the sacrifice tunic 120 in sacrifice layer chamber 110, discharge cantilever beam structure.It should be noted that, adopt isotropism wet corrosion technique, corrosion chemical reagent can be chosen in the chemical reagent of conventional integrated circuit.Because chemical reagent has very strong corrosion selectivity, it is the corrosion rate of 20～50 times of polysilicons that cantilever beam periphery covered to it and silicon nitride for the corrosion rate of sacrificing tunic, therefore corrodes in thoroughly removing sacrifice tunic and can not cause damage to the substrate surface of cantilever beam structure itself and silicon nitride covering.
Described cantilever beam structure, one end is fixed on outside sacrifice layer chamber, emptying along with sacrifice layer chamber, the other end is suspended on inside, sacrifice layer chamber, becomes movable end.Because the supporting construction of polysilicon is arranged at described cantilever beam structure bottom, periphery has again the barrier layer parcel of silicon nitride, and its intensity is greatly improved, and while being enough to resist wet etching sacrifice layer, discharges through the energy that discharges window 250.Be difficult for micro-structural and substrate adhesion occur, or the problem such as fracture, contribute to improve rate of finished products.
Please refer to Figure 23, the cantilever beam structure after release, is nitrided silicon and polysilicon and surrounds, and has a stiff end to be positioned at outside, sacrifice layer chamber, and another movable end extends and terminates in inside, sacrifice layer chamber.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a double-deck piezoelectric film cantilever beam sensor construction, comprising:
The Semiconductor substrate of twin polishing;
Be arranged in the sacrifice layer chamber of described Semiconductor substrate;
Cantilever beam supporting construction, a stiff end is positioned at outside described sacrifice layer chamber, and another movable end is inner extension to sacrifice layer chamber, and terminates in sacrifice layer chamber;
Be positioned at the cantilever beam structure of described cantilever beam supporting construction top;
The release barrier structure of parcel cantilever beam structure periphery;
It is characterized in that, there is the opening that is positioned at described Semiconductor substrate front in described sacrifice layer chamber.
2. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 1, is characterized in that, cantilever beam supporting construction is made up of polysilicon film, and thickness is 1 micron～2 microns.
3. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 1, is characterized in that, described cantilever beam structure is made up of two-layer piezoelectric membrane and three electrodes.
4. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 3, is characterized in that, described piezoelectric membrane adopts lead zirconate titanate PZT material, and thickness is 0.5 micron～5 microns.
5. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 3, is characterized in that, described electrode is made up of double-layer metal film, adopts respectively metal platinum Pt and Titanium Ti.
6. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 5, is characterized in that, the thickness of metal platinum Pt is 0.01 micron～0.1 micron.
7. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 5, is characterized in that, the thickness of Titanium Ti is 0.01～0.05 micron.
8. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 3, is characterized in that, described piezoelectric membrane and electrode are arranged under the overlay mutually.
9. double-deck piezoelectric film cantilever beam sensor construction as claimed in claim 1, is characterized in that, the release barrier structure of described cantilever beam structure periphery parcel is one deck silicon nitride film, and thickness is 0.05 micron～0.1 micron.
10. a manufacture method for double-deck piezoelectric film cantilever beam sensor construction, is characterized in that, comprising:
The Semiconductor substrate of twin polishing is provided;
On described Semiconductor substrate front, form cavity;
In described cavity, form and fill and completely sacrifice tunic, form sacrifice layer chamber;
Form cantilever beam supporting layer in described substrate face;
Above described supporting layer, form bottom electrode;
Above described bottom electrode, form laminated conductive film;
Electrode in forming above described laminated conductive film;
Above the electrode of described intermediate layer, form upper strata piezoelectric membrane;
Above the piezoelectric membrane of described upper strata, form top electrode;
In the positive cantilever beam supporting construction that forms of described Semiconductor substrate;
Form and discharge barrier structure at described semiconductor substrate surface, parcel is positioned at the described cantilever beam structure of described piezoelectric film cantilever beam supporting construction top;
Form sacrifice layer on surface, described sacrifice layer chamber and discharge window;
Remove and sacrifice tunic, discharge cantilever beam structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410200445.4A CN103985814A (en) | 2014-05-13 | 2014-05-13 | Double-layer piezoelectric film cantilever beam sensor structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410200445.4A CN103985814A (en) | 2014-05-13 | 2014-05-13 | Double-layer piezoelectric film cantilever beam sensor structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103985814A true CN103985814A (en) | 2014-08-13 |
Family
ID=51277711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410200445.4A Pending CN103985814A (en) | 2014-05-13 | 2014-05-13 | Double-layer piezoelectric film cantilever beam sensor structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103985814A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104215338A (en) * | 2014-09-01 | 2014-12-17 | 电子科技大学 | Greenhouse detector integrating piezoelectric and pyroelectric characteristics and preparation method of greenhouse detector |
| CN105428519A (en) * | 2015-12-17 | 2016-03-23 | 上海集成电路研发中心有限公司 | Multilayer piezoelectric thin film cantilever beam sensor and preparation method therefor |
| CN105514258A (en) * | 2015-12-10 | 2016-04-20 | 上海集成电路研发中心有限公司 | Piezoelectric cantilever beam sensor structure and manufacturing method thereof |
| CN105810813A (en) * | 2016-03-21 | 2016-07-27 | 中国科学院半导体研究所 | Piezoelectric actuating beam structure |
| CN106918397A (en) * | 2015-12-28 | 2017-07-04 | 中芯国际集成电路制造(上海)有限公司 | MEMS, MEMS temperature sensor and respective preparation method |
| CN110337056A (en) * | 2019-08-06 | 2019-10-15 | 常州元晶电子科技有限公司 | A kind of production method of high density directive property piezo-electric electro-acoustic transducer array |
| CN110386588A (en) * | 2018-04-19 | 2019-10-29 | 格科微电子（上海）有限公司 | A kind of implementation method of metal cantilever girder construction |
| CN112151511A (en) * | 2020-08-17 | 2020-12-29 | 中国科学院微电子研究所 | Semiconductor structure and preparation method thereof |
| CN113131782A (en) * | 2019-12-31 | 2021-07-16 | 中芯集成电路（宁波）有限公司 | Piezoelectric driver, manufacturing method thereof and imaging module |
-
2014
- 2014-05-13 CN CN201410200445.4A patent/CN103985814A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104215338A (en) * | 2014-09-01 | 2014-12-17 | 电子科技大学 | Greenhouse detector integrating piezoelectric and pyroelectric characteristics and preparation method of greenhouse detector |
| CN104215338B (en) * | 2014-09-01 | 2017-06-30 | 电子科技大学 | A kind of greenhouse detector of integrated piezoelectric pyroelectricity characteristic and preparation method thereof |
| CN105514258A (en) * | 2015-12-10 | 2016-04-20 | 上海集成电路研发中心有限公司 | Piezoelectric cantilever beam sensor structure and manufacturing method thereof |
| CN105428519A (en) * | 2015-12-17 | 2016-03-23 | 上海集成电路研发中心有限公司 | Multilayer piezoelectric thin film cantilever beam sensor and preparation method therefor |
| CN106918397B (en) * | 2015-12-28 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | MEMS device, MEMS temperature sensor and respective production method |
| CN106918397A (en) * | 2015-12-28 | 2017-07-04 | 中芯国际集成电路制造(上海)有限公司 | MEMS, MEMS temperature sensor and respective preparation method |
| CN105810813B (en) * | 2016-03-21 | 2018-06-29 | 中国科学院半导体研究所 | Piezoelectricity performs girder construction |
| CN105810813A (en) * | 2016-03-21 | 2016-07-27 | 中国科学院半导体研究所 | Piezoelectric actuating beam structure |
| CN110386588A (en) * | 2018-04-19 | 2019-10-29 | 格科微电子（上海）有限公司 | A kind of implementation method of metal cantilever girder construction |
| CN110386588B (en) * | 2018-04-19 | 2023-03-24 | 格科微电子（上海）有限公司 | Implementation method of metal cantilever beam structure |
| CN110337056A (en) * | 2019-08-06 | 2019-10-15 | 常州元晶电子科技有限公司 | A kind of production method of high density directive property piezo-electric electro-acoustic transducer array |
| CN113131782A (en) * | 2019-12-31 | 2021-07-16 | 中芯集成电路（宁波）有限公司 | Piezoelectric driver, manufacturing method thereof and imaging module |
| CN112151511A (en) * | 2020-08-17 | 2020-12-29 | 中国科学院微电子研究所 | Semiconductor structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103985814A (en) | Double-layer piezoelectric film cantilever beam sensor structure and manufacturing method thereof | |
| EP3155667B1 (en) | Monolithic cmos-integration of free-and non-free-standing mems structures in a sealed cavity | |
| JP4768205B2 (en) | Micromachined absolute pressure sensor | |
| CN102249177B (en) | Micro-electromechanical sensor and forming method thereof | |
| CN102718179B (en) | MEMS devices and manufacture method thereof | |
| JP5317826B2 (en) | Manufacturing method of capacitive electromechanical transducer | |
| CN103373698B (en) | Make method and the MEMS inertial sensor of MEMS inertial sensor | |
| US8857041B2 (en) | Method for fabricating an electromechanical transducer | |
| CN101130426A (en) | Micro-electromechanical systems device and manufacturing method thereof | |
| CN105428519A (en) | Multilayer piezoelectric thin film cantilever beam sensor and preparation method therefor | |
| CN103715350A (en) | Piezoelectric film cantilever beam sensor structure based on SOI substrate, and manufacturing method | |
| CN105784189A (en) | Silicon-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation thereof | |
| US20170113928A1 (en) | Device and method for producing a device comprising micro or nanostructures | |
| CN101388364A (en) | Electric isolation region forming method adopting low temperature process, single chip integration method and chip | |
| CN110798788B (en) | MEMS structure and forming method thereof | |
| CN102520032A (en) | CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof | |
| CN103594617A (en) | Piezoelectric cantilever sensor and manufacturing method thereof | |
| CN108281363A (en) | A kind of piezo-electric resonator/sensor packaging process of low cost | |
| CN101355827A (en) | Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip | |
| CN109596208B (en) | MEMS piezoelectric vector hydrophone with U-shaped groove cantilever beam structure and preparation method thereof | |
| CN102122935A (en) | Micro-mechanical resonator having submicron clearances and manufacturing method thereof | |
| CN104891419B (en) | A kind of MEMS inertial sensor and manufacture method thereof | |
| CN102740207A (en) | Chip integrating silicon micro microphone and complementary metal oxide semiconductor (CMOS) integrated circuit and manufacturing method of chip | |
| CN103991836A (en) | Micro electro mechanical system sensor and manufacturing method thereof | |
| CN109890749A (en) | MEMS structure with graphene component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140813 |
|
| WD01 | Invention patent application deemed withdrawn after publication |