CN104134655A - 具有集成电流传感器的功率模块 - Google Patents

具有集成电流传感器的功率模块 Download PDF

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Publication number
CN104134655A
CN104134655A CN201410179496.3A CN201410179496A CN104134655A CN 104134655 A CN104134655 A CN 104134655A CN 201410179496 A CN201410179496 A CN 201410179496A CN 104134655 A CN104134655 A CN 104134655A
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substrate
metallization
transducer
semiconductor element
power model
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CN104134655B (zh
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C.卡斯特罗塞拉托
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Infineon Technologies AG
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Infineon Technologies AG
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    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
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    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
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Abstract

本发明提供一种具有集成电流传感器的功率模块。功率模块包括：具有金属化侧面的第一衬底；第二衬底，与第一衬底分离放置并且具有面对第一衬底的金属化侧面的金属化侧面；和半导体管芯，***在第一和第二衬底之间。半导体管芯具有连接到第一衬底的金属化侧面的第一侧面和连接到第二衬底的金属化侧面的相对的第二侧面。功率模块进一步包括传感器，连接到第一衬底的金属化侧面并且与第二衬底的金属化侧面电流隔离。传感器与第二衬底的金属化侧面的第一金属区对齐以便传感器能够测量由第一金属区生成的磁场。

Description

具有集成电流传感器的功率模块
技术领域
本申请涉及功率模块，并且更具体地涉及具有集成电流传感器的功率模块。
背景技术
在功率模块中对用于测量负载电流的磁阻或霍尔传感器的集成呈现几个挑战。例如，传感器必须被放置在正确位置以实现必要的准确度。在差分霍尔传感器的情况中，传感器的两个霍尔板必须都定位在生成要测量磁场的电流轨的侧面上。而且，磁阻和霍尔传感器必须与模块的其它部件电流隔离。电流隔离通常通过把附加陶瓷结构添加到功率模块来实现。这样的结构在功率模块的产生中呈现高复杂性。下层模块衬底和用于传感器的陶瓷隔离结构之间的附着必须非常坚固以实现可靠性要求，诸如热冲击、热循环和功率循环。
发明内容
根据功率模块的实施例，功率模块包括：具有金属化侧面的第一衬底；第二衬底，与第一衬底分离放置并且具有面对第一衬底的金属化侧面的金属化侧面；和半导体管芯，***在第一和第二衬底之间。半导体管芯具有连接到第一衬底的金属化侧面的第一侧面和连接到第二衬底的金属化侧面的相对的第二侧面。功率模块进一步包括传感器，连接到第一衬底的金属化侧面并且与第二衬底的金属化侧面电流隔离。传感器与第二衬底的金属化侧面的第一金属区对齐以便传感器能够测量由第一金属区生成的磁场。
根据制造功率模块的方法的实施例，方法包括：把半导体管芯的第一侧面附着到第一衬底的金属化侧面，并且把半导体管芯的相对的第二侧面附着到第二衬底的金属化侧面，其中半导体管芯***在第一和第二衬底之间；以及把传感器附着到第一衬底的金属化侧面，以便所述传感器与第二衬底的金属化侧面电流隔离并且与第二衬底的金属化侧面的第一金属区对齐。
根据感测在功率模块中流动的电流的实施例，方法包括：切换半导体管芯使得电流在第二衬底的金属化侧面的与所述传感器对齐的第一金属区中流动，在第一金属区中流动的电流对应于在切换期间穿过半导体管芯流动的电流；通过传感器感测由第一金属区响应于穿过第一金属区流动的电流而生成的磁场；以及生成对应于由传感器所感测的磁场的信号。
通过阅读后面的详细描述以及通过观看附图，本领域技术人员将认识到附加的特征和优点。
附图说明
图中的部件不一定按比例，相反地，重点放在图示本发明的原理。此外，在图中，相似的参考数字指定对应的部分。在附图中：
图1图示了具有集成电流传感器的功率模块的实施例的截面视图；
图2图示了具有集成电流传感器、模制化合物和散热器的功率模块的实施例的截面视图；
图3图示了具有集成电流传感器的功率模块的另一实施例的截面视图；
图4图示了具有集成电流传感器的功率模块的再另一实施例的截面视图；
图5图示了具有集成电流传感器和散热器的功率模块的实施例的截面视图；
图6A和6B图示了具有用于在具有集成电流传感器的功率模块中使用的不同导电区的下和上衬底的实施例的相应的俯视图；以及
图7图示了由包括在封装中的部件实现的半桥变流器电路的示例性电路图，该封装由图6A和6B的下和上衬底实现。
具体实施方式
根据本文中描述的实施例，在不针对传感器添加另外的隔离结构的情况下，电流隔离传感器被集成到具有双侧冷却的功率模块中。例如，传感器可以***在两个陶瓷衬底之间，每个陶瓷衬底具有相对的金属化侧面。这样的模块构造供给了双侧热路径用于耗散由包括在模块中的每个开关中的损耗产生的热量，从而减小模块的热阻并且因此增加模块的性能（例如最大功率和功率密度）。传感器可以放置在任一陶瓷衬底上，并且由传感器感测的电流轨放置在相对的衬底上。传感器与电流轨分离放置以确保足够的电流隔离。金属块（诸如夹具）可以用于调整电流轨和传感器之间的距离。
图1图示了功率模块的实施例的截面视图。功率模块包括：下衬底100，包括具有相对金属化侧面102、104的电隔离材料101，诸如陶瓷；和与下衬底100分离放置的上衬底106，并且上衬底106也包括具有相对金属化侧面108、110的电隔离材料105，诸如陶瓷。下衬底100的顶金属化侧面102面对上衬底106的底金属化侧面108。一个或多个半导体管芯112***在下和上衬底100、106之间。在图1中的视图中的半导体管芯112具有连接到下衬底100的顶金属化侧面102的底侧面111以及连接到上衬底106的底金属化侧面108的相对的顶侧面113。相应的焊接或烧结管芯附着层114、116可以用于这些连接。根据这个实施例，半导体管芯112的顶侧面113通过金属块118（诸如***在半导体管芯112和上衬底106之间的铜夹具）连接到上衬底106的底金属化侧面108。金属块118可以通过附加的焊接或烧结附着层120接合到上衬底106的底金属化侧面108。
传感器122连接到下衬底100的顶金属化侧面102。焊接或烧结管芯附着层124可以用于这个连接。下衬底100的顶金属化侧面102和上衬底106的底金属化侧面108两者都被图案化以便可以制作到传感器122和半导体管芯112的适当的电连接。下衬底100的底金属化侧面104和/或上衬底106的顶金属化侧面110可以是单个连续结构以减小模块的热阻。散热器可以附着到这些金属化侧面104、110中的任一个或两者以增加模块的热性能。为了易于图示，在图1中未示出这样的散热器。
***在下和上衬底100、106之间的传感器122与传感器122未附着到的衬底电流隔离。在图1图示的实施例中，传感器122附着到下衬底100并且通过传感器122的顶侧面123与上衬底106的底金属化侧面108之间的间隙（g）与上衬底106的底金属化侧面108电流隔离。传感器122与上衬底106的底金属化侧面108的第一金属区126对齐。在这个实施例中，传感器122放置在第一金属区126之下。然而，在传感器122附着到上衬底106并且第一金属区126设置在下衬底100的顶金属化侧面102的情况中，传感器122可以替代地放置在第一金属区126的上方。在任一情况中，这个金属区126在本文中还称为电流轨。
半导体管芯112的顶侧面113电连接到上衬底106的底金属化侧面108的第二金属区128。上衬底106的底金属化侧面108的第二金属区128可以连接到电流轨126使得在轨126中流动的电流在管芯112操作期间穿过半导体管芯112。照此，在与传感器1122对齐的轨126中流动的电流与模块电流成比例。电流轨126基于在轨126中流动的电流生成磁场。在图1中通过一系列不断增加尺寸的同心圆示意性地图示了该磁场。
在图1中给定的示例中，轨126中的电流流动到页面中，并且磁场在轨126周围以顺时针方向生成。传感器122测量由电流轨126生成的磁场。在具有两个霍尔板130、132的差分霍尔传感器122的情况中，传感器122生成是穿过霍尔板130、132的磁场的差分通量密度的线性函数的信号。对于具有低噪声的应用，可以使用具有单个霍尔板的霍尔传感器122。在再另一实施例中，传感器122可以是基于磁阻的传感器，诸如敏感轴位于传感器元件的平面中的AMR（各向异性磁阻）传感器，并且AMR传感器122测量由电流轨126生成的磁场。
通常，与衬底100、106之一电流隔离的任何传感器122可以被使用并且测量由设置在那个衬底100、106处的电流轨126生成的的磁场。可以通过切换半导体管芯112使得电流在与传感器122对齐的电流轨126中流动来感测在功率模块中流动的电流，轨电流对应于在切换期间穿过半导体管芯112流动的电流。由电流轨126生成的对应的磁场由电流隔离传感器122感测。传感器122生成对应于所感测的磁场的量值的信号。磁阻和霍尔传感器的构造和操作是众所周知的，并且因此在这点上不提供关于传感器122的进一步的解释。
图2图示了功率模块的另一实施例的截面视图。图2中示出的模块类似于图1中示出的模块，然而，模制化合物200封装下和上衬底100、106、半导体管芯112和传感器122。下衬底100的底金属化侧面104和上衬底106的顶金属化侧面110在功率模块的相对侧面保持不被模制化合物200覆盖，从而实现双侧冷却。可以例如通过螺钉、胶水等把散热器202、204附着到下衬底100的暴露的底金属化侧面104和/或附着到上衬底106的顶金属化侧面110以增加模块的热效率。
图3图示了功率模块的再另一实施例的截面视图。图3中示出的模块类似于图1中示出的模块，然而，传感器122通过***在传感器122和下衬底100之间的金属块300（诸如铜夹具）连接到下衬底100的顶侧面102。在金属块300的顶和底侧面301、303处提供焊接或烧结附着层302、304以把传感器122附着到块300以及把块300附着到下衬底100。根据这个实施例，传感器122和设置在上衬底106的底金属化侧面108处的电流轨126之间的间隙（g）由于使用金属块300把传感器122连接到下衬底100而被减小。
]图4图示了功率模块的还另一实施例的截面视图。图4中示出的模块类似于图1中示出的模块，然而，上衬底100包括经由金属块118连接到半导体管芯112的顶侧面113的第一金属夹具400以及与传感器122对齐并电流隔离的第二金属夹具402。第二金属夹具402是生成由电流隔离的传感器122所感测的磁场的电流轨。
图5图示了图4中示出的功率模块的截面视图，其中散热器500附着到下衬底100的金属化底侧面104。电隔离材料502（诸如陶瓷衬底）可以附着到上衬底106的金属化部400使得第二散热器504可以附着到电隔离材料502。根据这个实施例模块可以在两侧都被更有效地冷却。
图6A图示了包括在功率模块中的下衬底600的实施例的俯视图，并且图6B图示了包括在相同功率模块中的对应的上衬底610的实施例的俯视图。下和上衬底600、610均包括多个不同的导电区602、604、606/612、614、616、618。根据这个实施例，模块包括至少两个半导体管芯620、622和针对每个管芯620、622的对应的续流二极管624、626。在一个示例中，管芯620、622形成具有高侧开关（HS）、低侧开关（LS）、针对每个开关的续流二极管D1、D2、以及输入电容器（Cin）的半桥电路，如在图7中示意性图示的。可以采用其它电路类型，诸如多相开关、三相逆变器等。
高侧开关管芯620的底侧面和对应的续流二极管624连接到下衬底600的第一导电区602。低侧开关管芯622的底侧面和对应的续流二极管626连接到下衬底600的第二导电区604。半桥电路的输出端子（输出）连接到下衬底600的第二导电区604。
在功率MOSFET（金属氧化物半导体场效应晶体管）的情况中，高侧开关管芯620的的漏极（D）连接到半桥电路的正端子（+）并且低侧开关管芯622的源极（S）连接到半桥电路的负端子（-）。在IGBT（绝缘栅双极晶体管）的情况中，高侧开关管芯620的集电极连接到半桥电路的正端子（+）并且低侧开关管芯622的发射极连接到半桥电路的负端子（-）。下衬底600具有连接模块负端子（-）的第三不同导电区606。线结合、带和/或金属夹具可以用于形成管芯620、622，二极管624、626和端子（+、-、输出）之间的电连接，如图7中示意性指示的那样。为了易于图示，这些连接和端子（包括输入电容器（Cin）、栅极（G）连接和输入信号（IN1、IN2））在图6A和6B中未示出，但是在图7中示意性地图示了。
下衬底600的第二导电区604在与模块的输出端子（输出）的连接点处变窄。第二导电区604的变窄部分605形成电流轨，电流轨响应于穿过开关管芯620、622流动的电流而生成磁场。因为传感器122必须适当地与电流轨605对齐并且电流隔离，所以传感器122附着到上衬底610的一个或多个导电区616、618使得传感器122放置在模块的组件上的电流轨605上方。图6B中示出的上衬底610的侧面翻转并且旋转以适当地与开关管芯620、622和下衬底600对齐，包括传感器122与电流轨605的适当对齐。
在图6B中，传感器122被图示为具有两个霍尔板的差分霍尔传感器，每个霍尔板与下层电流轨605对齐使得传感器122可以测量当电流穿过轨605流动时由电流轨605生成的磁场的差分通量密度。低侧开关管芯622的源极（发射极）端子通过金属块628（诸如铜夹具）连接到半桥电路的负端子（-），金属块628把连接到模块的负端子（-）的下衬底600的导电区606短路到上衬底610的对应的导电区614。高侧开关管芯620的漏极（集电极）端子类似地通过金属块630（诸如铜夹具）连接到半桥电路的输出端子（输出），金属块630把连接到高侧开关管芯620的漏极（集电极）的上衬底610的导电区612短路到连接到模块的输出端子（输出）的下衬底600的导电区604。下衬底600的导电区602、604、606和上衬底610的导电区612、614、616、618可以附着到对应的电隔离材料632、634（诸如均具有金属化外侧面的相应的陶瓷衬底）以提供本文中先前描述的双侧冷却。这样的布置可以进一步包括附着到一个或两个隔离材料632、634的外金属化侧面的散热器和/或封装模块的模制化合物，也如在本文中先前描述的。
为了易于描述，诸如“之下”、“低于”、“下”、“上方”、“上”等空间相对术语用于解释一个元件相对于第二元件的放置。这些术语意图包含图中描绘的那些之外的不同定向的器件的不同定向。另外，诸如“第一”、“第二”等术语也用于描述各种元件、区、区段等，并且也不意图限制。贯穿本描述，相似的术语指代相似的元件。
如本文中使用的，术语“具有”、“含有”、“包括”、“包含”等是开放的术语，其指示所述元件或特征的存在，但不排除附加元件或特征。冠词“一”、“一个”和“该”意图包括复数以及单数，除非上下文另外清楚地指明。
考虑到变型和应用的上面的范围，应当理解的是，本发明不由前面的描述限制，也不由附图限制。相反地，本发明仅由所附的权利要求及其法律等同物限制。

Claims (20)

1.功率模块，包括：
第一衬底，具有金属化侧面；
第二衬底，与第一衬底分离放置并且具有面对第一衬底的金属化侧面的金属化侧面；
半导体管芯，***在第一和第二衬底之间，所述半导体管芯具有连接到第一衬底的金属化侧面的第一侧面和连接到第二衬底的金属化侧面的相对的第二侧面；以及
传感器，连接到第一衬底的金属化侧面并且与第二衬底的金属化侧面电流隔离，所述传感器与第二衬底的金属化侧面的第一金属区对齐以便所述传感器能够测量由第一金属区生成的磁场。
2.根据权利要求1的功率模块，其中所述半导体管芯的第二侧面电连接到第二衬底的金属化侧面的第二金属区，并且其中第二金属区连接到第一金属区使得在第一金属区中流动的电流穿过所述半导体管芯，并且由所述传感器测量的磁场对应于在所述管芯的操作期间穿过所述半导体管芯的电流。
3.根据权利要求1的功率模块，其中第一衬底包括多个导电区，其中所述半导体管芯的第一侧面连接到所述导电区之一，并且其中所述传感器连接到所述导电区中的、与所述半导体管芯所连接的不同的一个或多个导电区。
4.根据权利要求3的功率模块，进一步包括：
电隔离材料，具有附着到所述导电区的背向所述半导体管芯的侧面的第一侧面，以及与第一侧面相对的第二侧面；以及
散热器，附着到所述电隔离材料的第二侧面。
5.根据权利要求1的功率模块，其中第一衬底包括具有金属化第一侧面和相对的金属化第二侧面的电隔离材料，并且其中所述半导体管芯的第一侧面和所述传感器连接到所述电隔离材料的第一金属化侧面。
6.根据权利要求5的功率模块，其中第二衬底包括具有面对第一衬底的金属化第一侧面和相对的金属化第二侧面的电隔离材料，其中所述半导体管芯的第二侧面连接到第二衬底的电隔离材料的第一金属化侧面，并且其中所述传感器与第二衬底的电隔离材料的第一金属化侧面电流隔离。
7.根据权利要求6的功率模块，其中所述半导体管芯的第二侧面通过***在所述半导体管芯和第二衬底之间的金属块连接到第二衬底的电隔离材料的第一金属化侧面。
8.根据权利要求6的功率模块，其中第二衬底的电隔离材料的第二金属化侧面是单个连续结构。
9.根据权利要求6的功率模块，进一步包括：
第一散热器，附着到第一衬底的电隔离材料的第二金属化侧面；以及
第二散热器，附着到第二衬底的电隔离材料的第二金属化侧面。
10.根据权利要求6的功率模块，进一步包括：封装第一和第二衬底、所述半导体管芯和所述传感器的模制化合物，其中第一衬底的电隔离材料的第二金属化侧面和第二衬底的电隔离材料的第二金属化侧面保持在所述功率模块的相对侧面不被所述模制化合物覆盖。
11.根据权利要求1的功率模块，其中第二衬底包括第一金属夹具和第二金属夹具，第一金属夹具连接到所述半导体管芯的第二侧面，所述传感器在第二金属夹具之下被对齐和电流隔离。
12.根据权利要求1的功率模块，其中所述传感器通过***在所述传感器和第一衬底之间的金属块连接到第一衬底的金属化侧面。
13.根据权利要求1的功率模块，其中所述传感器是霍尔传感器。
14.根据权利要求13的功率模块，其中所述霍尔传感器是包括两个霍尔板的差分霍尔传感器，每个霍尔板放置在相同的平面中并且与第二衬底的第一金属区对齐使得由第一金属区生成的磁场与两个霍尔板都交叉。
15.一种制造功率模块的方法，所述方法包括：
把半导体管芯的第一侧面附着到第一衬底的金属化侧面，并且所述半导体管芯的相对的第二侧面连接到第二衬底的金属化侧面，其中所述半导体管芯***在第一和第二衬底之间；以及
把传感器附着到第一衬底的金属化侧面，使得所述传感器与第二衬底的金属化侧面电流隔离并且与第二衬底的金属化侧面的第一金属区对齐，使得所述传感器能够测量由第一金属区生成的磁场。
16.根据权利要求15的方法，其中第一衬底包括具有金属化第一侧面和相对的金属化第二侧面的电隔离材料，并且其中所述半导体管芯的第一侧面和所述传感器连接到所述电隔离材料的第一金属化侧面。
17.根据权利要求16的方法，其中第二衬底包括具有面对第一衬底的金属化第一侧面和相对的金属化第二侧面的电隔离材料，其中所述半导体管芯的第二侧面连接到第二衬底的电隔离材料的第一金属化侧面，并且其中所述传感器与第二衬底的电隔离材料的第一金属化侧面电流隔离。
18.根据权利要求16的方法，进一步包括：用模制化合物封装第一和第二衬底、所述半导体管芯和所述传感器，使得第一衬底的电隔离材料的第二金属化侧面和第二衬底的电隔离材料的第二金属化侧面保持在所述功率模块的相对侧面不被所述模制化合物覆盖。
19.根据权利要求15的方法，其中所述传感器通过***在所述传感器和第一衬底之间的金属块连接到第一衬底的金属化侧面。
20.一种感测在功率模块中流动的电流的方法，所述功率模块包括：具有金属化侧面的第一衬底；第二衬底，与第一衬底分离放置并且具有面对第一衬底的金属化侧面的金属化侧面；半导体管芯，***在第一和第二衬底之间，所述半导体管芯具有连接到第一衬底的金属化侧面的第一侧面和连接到第二衬底的金属化侧面的相对的第二侧面；以及传感器，连接到第一衬底的金属化侧面并且与第二衬底的金属化侧面电流隔离，所述方法包括：
切换半导体管芯使得电流在第二衬底的金属化侧面的、与所述传感器对齐的第一金属区中流动，在第一金属区中流动的电流对应于在切换期间穿过所述半导体管芯流动的电流；
通过所述传感器感测由第一金属区响应于穿过第一金属区流动的电流而生成的磁场；以及
生成对应于由所述传感器所感测的磁场的信号。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428521A (zh) * 2015-11-13 2016-03-23 扬州国扬电子有限公司 集成霍尔电流传感器的功率半导体模块
CN106298757A (zh) * 2015-06-23 2017-01-04 英飞凌科技股份有限公司 具有集成式磁场传感器的功率封装体
CN110071645A (zh) * 2018-01-24 2019-07-30 英飞凌科技股份有限公司 用于高电流功率模块的无芯电流传感器
CN111490150A (zh) * 2019-01-29 2020-08-04 英飞凌科技股份有限公司 具有外部功率传感器的半导体模块

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564578B2 (en) 2015-06-23 2017-02-07 Infineon Technologies Ag Semiconductor package with integrated magnetic field sensor
US10168391B2 (en) * 2015-06-23 2019-01-01 Infineon Technologies Ag Multi-functional interconnect module and carrier with multi-functional interconnect module attached thereto
KR101734712B1 (ko) * 2015-12-09 2017-05-11 현대자동차주식회사 파워모듈
JP6655436B2 (ja) * 2016-03-17 2020-02-26 アルプスアルパイン株式会社 半導体装置及び半導体装置の製造方法
CN107170714B (zh) * 2017-06-14 2020-01-14 扬州国扬电子有限公司 一种低寄生电感功率模块及双面散热低寄生电感功率模块
KR102391008B1 (ko) * 2017-08-08 2022-04-26 현대자동차주식회사 파워 모듈 및 그 파워 모듈을 포함하는 전력 변환 시스템
DE102018114426A1 (de) 2018-06-15 2019-12-19 Infineon Technologies Ag Stromsensorpackage mit kontinuierlicher Isolation
JP7213097B2 (ja) * 2019-01-28 2023-01-26 サンコール株式会社 電流検出装置
DE102019003373B4 (de) * 2019-05-14 2023-08-10 Infineon Technologies Austria Ag Leistungshalbleitervorrichtung mit integrierter Strommessung und Leistungsmodul diese aufweisend und Verfahren zum Messen eines Stroms darin
DE102019122369A1 (de) * 2019-08-20 2021-02-25 Infineon Technologies Ag Leistungshalbleitermodul und verfahren zur herstellung eines leistungshalbleitermoduls
JP7491188B2 (ja) 2020-11-09 2024-05-28 株式会社デンソー 電気機器
DE102021206621A1 (de) 2021-06-25 2022-12-29 Robert Bosch Gesellschaft mit beschränkter Haftung Kommutierzelle für einen Inverter
DE102021206627A1 (de) * 2021-06-25 2022-12-29 Robert Bosch Gesellschaft mit beschränkter Haftung Stromerfassungsanordnung, Kommutierzelle und Wechselrichter
EP4280277A1 (en) * 2022-05-16 2023-11-22 Infineon Technologies AG Power semiconductor module arrangement and method for producing a power semiconductor module arrangement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5833824A (en) * 1996-11-15 1998-11-10 Rosemount Analytical Inc. Dorsal substrate guarded ISFET sensor
US6819095B1 (en) 1999-09-16 2004-11-16 International Rectifier Corporation Power semiconductor device assembly with integrated current sensing and control
WO2002082109A1 (en) 2001-04-09 2002-10-17 Koninklijke Philips Electronics N.V. Integrated circuit with power supply test interface
US20040217451A1 (en) * 2002-11-14 2004-11-04 Sai-Mun Lee Semiconductor packaging structure
EP1450176A1 (en) * 2003-02-21 2004-08-25 Liaisons Electroniques-Mecaniques Lem S.A. Magnetic field sensor and electrical current sensor therewith
JP4385883B2 (ja) 2004-07-27 2009-12-16 トヨタ自動車株式会社 半導体モジュール
JP2006140217A (ja) * 2004-11-10 2006-06-01 Toyota Motor Corp 半導体モジュール
US7626262B2 (en) * 2006-06-14 2009-12-01 Infineon Technologies Ag Electrically conductive connection, electronic component and method for their production
US7969774B2 (en) * 2009-03-10 2011-06-28 Micron Technology, Inc. Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices
US8680843B2 (en) * 2010-06-10 2014-03-25 Infineon Technologies Ag Magnetic field current sensors
EP2514713B1 (en) * 2011-04-20 2013-10-02 Tronics Microsystems S.A. A micro-electromechanical system (MEMS) device
US8466541B2 (en) * 2011-10-31 2013-06-18 Infineon Technologies Ag Low inductance power module
US8823175B2 (en) * 2012-05-15 2014-09-02 Infineon Technologies Ag Reliable area joints for power semiconductors

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298757A (zh) * 2015-06-23 2017-01-04 英飞凌科技股份有限公司 具有集成式磁场传感器的功率封装体
CN106298757B (zh) * 2015-06-23 2019-01-08 英飞凌科技股份有限公司 具有集成式磁场传感器的功率封装体
CN105428521A (zh) * 2015-11-13 2016-03-23 扬州国扬电子有限公司 集成霍尔电流传感器的功率半导体模块
CN105428521B (zh) * 2015-11-13 2017-10-27 扬州国扬电子有限公司 集成霍尔电流传感器的功率半导体模块
CN110071645A (zh) * 2018-01-24 2019-07-30 英飞凌科技股份有限公司 用于高电流功率模块的无芯电流传感器
US11239761B2 (en) 2018-01-24 2022-02-01 Infineon Technologies Ag Coreless current sensor for high current power module
CN111490150A (zh) * 2019-01-29 2020-08-04 英飞凌科技股份有限公司 具有外部功率传感器的半导体模块
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